Nonequilibrium carrier dynamics in semiconductors : proceedings of the 14th international conference, July 25-29, 2005, Chicago, USA PDF
Preview Nonequilibrium carrier dynamics in semiconductors : proceedings of the 14th international conference, July 25-29, 2005, Chicago, USA
M. Saraniti U. Ravaioli (Eds.) Nonequilibrium Carrier Dynamics in Semiconductors Proceedings of the 14th International Conference, July 25-29, 2005, Chicago, USA With 223 Figures Springer Professor M. Saraniti Department of Electrical and Computer Engineering Illinois Institute of Technology Suite 103, Siegel Hall 3301 South Dearborn Street Chicago, IL 60616, USA Professor U. Ravaioli Institute for Advanced Science and Technolgy University of Illinois 405 Nroth Mathes Avenue Urbana, IL 61801, USA Published in association with Canopus Publishing Limited, Bristol, UK ISSN 0930-8989 ISBN-io 3-540-36587-7 Springer Berlin Heidelberg New York ISBN-13 978-3-540-36587-7 Springer Berlin Heidelberg New York Library of Congress Control Number: 2006929190 This work is subject to copyright. All rights are reserved, whether the whole or part of the material is concerned, specifically the rights of translation, reprinting, reuse of illustrations, recitation, broadcasting, reproduction on microfilm or in any other way, and storage in data banks. Duplication of this publication or parts thereof is permitted only under the provisions of the German Copyright Law of September 9,1965, in its current version, and permission for use must always be obtained from Springer-Verlag. Violations are Hable to prosecution under the German Copyright Law. Springer is a part of Springer Science+Business Media. springer.com © Springer-Verlag Berlin Heidelberg 2006 Printed in the UK The use of general descriptive names, registered names, trademarks, etc. in this publication does not imply, even in the absence of a specific statement, that such names are exempt from the relevant protective laws and regulations and therefore free for general use. Cover concept: eStudio Calamar Steinen Cover production: design & production GmbH, Heidelberg Printing: Short Run Express, Exeter, UK Printed on acid-free paper SPIN: 11575108 54/3141/mh 543210 Preface This volume contains invited and contributed papers of the 14^*^ International Conference on Nonequilibrium Carrier Dynamics in Semiconductors (HCIS--14) held July 24-29, 2005 in Chicago, Illinois. The conference featured five invited and 62 contributed talks, as well as 49 posters and an international contingent of more than 80 scientists. Following the tradition of the conference, the topics discussed identified the most promising developments of nonlinear transport studies. Among these, interesting contributions were offered on mesoscopic systems, coherence in charge transport, ultrafast phenomena and TeraHertz devices. Two sessions were devoted to high field transport in nitrides, while the discussion on spintronics and thermoelectric phenomena clearly indicated the importance of these topics for the next generations of devices. Finally, a session was devoted to molecular electronics and two to bioelectronics, stressing the interest of the community in the study of charge transport in complex macromolecular systems. On behalf of the Program and International Advisory Committees, we thank the participants, who made the conference a successful and pleasant experience and the generous support of DARPA, IBM, the Beckman Institute of the University of Illinois, and the Illinois Institute of Technology in Chicago. We are also indebted to Ms. Sara Starkey and Ms. Carol Osmer for their invaluable contribution to the conference organization and administration. Marco Saraniti Umberto Ravaioli Contents Preface v Electron transport in curved low dimensional electron systems A^ Shaji, H Qin, I Knezevic, C Deneke, O G Schmidt, M A Eriksson and R H Blick 1 Fabrication and characterization of InAs mesoscopic devices MKoyama, MFurukawa, H Ishii, MNakai, T Maemoto, S Saas and MInoue 7 Nonlinear effects on quantum interference in electron billiards C A Marlow, R P Taylor, MFairbanks and H Linke 11 Prediction of entanglement detection by I-V characteristics TZihold, P VoglandA Bertoni 15 Simulation of entanglement creation for carrier-impurity scattering in a 2D system P Bordone and A Bertoni 19 Super-Poissonian current fluctuations in tunnelling through coupled quantum dots GKiefilich,A Wacker and E Scholl 23 Ultrafast formation of coupled phonon-plasmon modes in InP observed with femtosecond terahertz spectroscopy C Kubler, R Huber, S Tubel, F Kohler, M C Amann and A Leitenstorfer 29 Optical coherent control of polariton modes in ZnSe single-quantum wells I Kudyk, L Wischmeier, T Voss, I RUckmann and J Gutowski 33 Optical properties of coupled quantum disk-waveguide structure M Yamaguchi, H Tanaka, MYokoi, H Takagi andN Sawaki 37 Picosecond spin-preserving carrier capture in InGaAs/GaAs quantum dots S Trumm, M Wesseli, H Krenner, D Schuh, M Bichler, J J Finley and M Betz 41 Influence of surfaces on the pure dephasing of quantum dots TKuhn, B Krummheuer and VMAxt 45 Exploiting the non-Markovian nature of carrier-phonon dynamics: multi-pulse control of decoherence in quantum dots P Machnikowski, VMAxt, TKuhn andL Jacak 49 viii Contents Numerical study of weak localization effects in disordered cavities LBonci, MMacucci, G lannaccone and M G Pala 55 Carrier scattering by optical phonons, two-phonon processes in photon absorption, and spontaneous polarization in wurtzites MDutta, G J Brown, D Ramadurai, D Geerpuram, J Yang, B Kohanpour, C Chen and MA Stroscio 59 Terahertz plasma oscillations in nanotransistors W Knap and J Lusakowski 63 High-intensity THz radiation from a large interdigitated array photo- conductive emitter S Winnerl, A Dreyhaupt, F Peter, D Stehr, M Helm and T Dekorsy 73 Broadband terahertz emission from ion-implanted semiconductors J Lloyd-Hughes, E Castro-Camus, MD Fraser, H H Tan, C Jagadish and MB Johnston 77 THz collective real-space oscillations of ballistic electrons in wide parabolic potential wells: an exotic transport regime MBetz, S Trumm, MEckardt, A Schwanhdufier, S Maker, F Sotier, A Leitenstorfer, T Miiller, K Unterrainer and G H Dohler 81 Effect of injector doping on non-equilibrium electron dynamics in mid-infrared GaAs/AlGaAs quantum cascade lasers VD Jovanovic, D Indjin, N Vukmirovic, Z Ikonic, P Harrison, E H Linfield, HPage, XMarcadet, C Sirtori, C Worrall, H Beere and D A Ritchie 85 Experimental investigation of hot carriers in THz and mid-IR quantum cascade lasers G Scamarcio, VSpagnolo, MS Vitiello and CDi Franco 89 Time- and spectrally-resolved THz photoconductivity in quantum hall devices C Stellmach, YB Vasilyev, R Bonk, A Hirsch, N G Kalugin, G Hein, C R Becker and G Nachtwei 95 Transport properties and terahertz emission in narrow minigap GaAs- GaAlAs superlattices A A Andronov, E P Dodin, A YKlimov, V VRogov, Y. N. Nozdrin, DI Zinchenko, A A Marmalyuk and A A Padalitsa 99 Investigation of antenna-coupled MOM diodes for infrared sensor applications B Rakos, H Yang, J A Bean, G H Bernstein, P Fay, A I Csurgay and W Porod 105 Contents ix Transport and noise in ultrafast unipolar nanodiodes and nanotransistors T Gonzalez, A MSong,B G Vasallo, D Pardo and J Mateos 109 Monte Carlo study of coupled SO phonon-plasmon scattering in Si MOSFETs with high AT- dielectric gate stacks: hot electron and disorder effects J R Barker, J R Watling, A Brown, S Roy, P Zeitzoff, G Bersuker and A Asenov 115 Implementation of separable scattering mechanisms in three-dimensional quantum mechanical simulations of devices M J Gilbert, RAkis and DK Ferry 121 A 2D-NEGF quantum transport study of unintentional charges in a double gate nanotransistor A Martinez, JR Barker, A Svizhenko, MBescond, MP Anantram, A R Brown and A Asenov 125 Wigner function RTD simulations with DMS barriers HLGrubin 129 High field transport in GaN and AlGaN/GaN heterojunction field effect transistors S Yamakawa, JBranlard, MSaraniti and S M Goodnick 133 Impact ionization and high-field electron transport in GaN A Kuligk, NFitzer and R Redmer 139 Studies of high field transport in a high-quality InN film by ultrafast Raman spectroscopy KTTsen,DKFerry,HLuandWJSchaff 143 Monte Carlo investigation of dynamic transport in nitrides L Reggiani, P Shiktorov, E Starikov, V Gruzinskis, L Varani, J C Vaissiere andJPNougier 147 High-field transport in nitride channels: a hot-phonon bottleneck A Matulionis, L F Eastman and J Uteris 151 Quantum transport and spin polarization in strongly biased semiconductor superlattices with Rashba spin-orbit coupling P Kleinert and V VBryksin 155 Temperature dependent transport in spin valve transistor structures RHeer, J Smoliner, J Bornemeier and H Briickl 159 Contents Spin filtering effects in a quantum point contact R Akis and D K Ferry 163 Exchange effects in the Wigner-fiinction approach E Cancellieri, P Bordone and C Jacoboni 167 Few-particle quantum transmitting boundary method: scattering resonances through a charged ID quantum dot A Bertoni and G Goldoni 171 The 7?-i7 approach to tunnelling in nanoscale devices MRudan, A Marchi, RBrunetti, S Reggiani and E Gnani 175 Monte Carlo simulation of solid-state thermionic energy conversion devices based on non-planar heterostructure interfaces ZBian and A Shakouri 179 Simulations of inelastic tunnelling in molecular bridges A Gagliardi, G C Solomon, A Pecchia, A Di Carlo, T Frauenheim, J R Re inters and NS Hush 183 Phonon effects in nanotubes: phase space reduction and electron conductance A Raichura, MDutta and MA Stroscio 187 Carbon nanotubes films for sensing applications: from piezoresistive sensor to gas sensing MLucci, P Regoliosi, F Brunetti, A Reale, A Di Carlo, E Tamburri, A Fiori, S Orlanducci, ML Terranova and P Lugli 191 Electro-thermal transport in silicon and carbon nanotube devices EPop, D Mann, J Rowlette, K Goodson and H Dai 195 Silicon-based ion channel platforms SJ Wilk, L Petrossian, M GoryII, J M Tang, R S Eisenberg, MSaraniti, S M Goodnick and T J Thornton 201 Implicit water simulations of non-equilibrium charge transport in ion channels U Ravaioli, T A van der Straaten and G Kathawala 205 An investigation of the dependence of ionic conduction on the dielectric properties of porin SJAboud, D Marreiro and MSaraniti 211 Contents xi Physical mechanisms for ion-current levelling off in the KcsA channel through combined Monte Carlo/molecular dynamics simulations EPiccinini, F Affinito, RBrunetti, C Jacoboni and M Rudan 217 Simulations of the gramicidin A channel by using the TR-PNP model SHu and K Hess 221 Phonon emission and absorption by holes in the HOMO bands of duplex DNA TYamanaka, MDutta, T Rajh and MA Stroscio 225 An impedance network model for the electrical properties of a single- protein nanodevice VAkimov, E Alfinito, C Pennetta, L Reggiani, J Minic, T Gorojankina, E Pajot-Augy and R Salesse 229 Field effect transistor constructed of novel structure with short-period (GaAs)n/(AlAs)m superlattice V T Trofimov, M V Valeiko, N A Volchkov, A I Toropov, K S Zhuravlev, E VKiseleva, S V Obolenskii, MA Kitaev and VA Kozlov 233 Predominance of geminate process of exciton formation in AlGaAs layers at low excitation E VKozhemyakina, A V Efanov, K S Zhuravlev, J Fuerst and H Pascher 237 Electron-distribution function for the Boltzmann equation in semiconductors O Muscato 241 Giant increase of electron saturated drift velocity in a MODFET channel V G Mokerov, J Pozela, K Pozela and V Juciene 245 Technological crossroads: silicon or III-V for ftiture generation nanotransistors M J Gilbert and DK Ferry 249 Optical phonon modes and electron-phonon interaction in a spheroidal quantum dot MIshida, M Yamaguchi, and N Sawaki 253 Terahertz negative differential conductivity in heterostructures due to population inversion and bunching of ballistic electrons VA Kozlov, A VNikolaev, and VA Verbus 257 Carrier dynamics of single ZnO nanowires L Wischmeier, C Bekeny, and T Voss 261 Traditional hot-electron MOS devices for novel optoelectronic applications TDekorsy, J Sun, W Skorupa, MHelm, L Rebohle and T Gebel 265 xii Contents Investigation of self-heating effects in individual SOI devices and device- device interactions MArifuzzaman and D Vasileska 269 Measurements of the electrical excitation of QH-devices in the real time domain G Vasile, C Stellmach, G Hein and G Nachtwei 273 Impact ionization and avalanche multiplication in AlGaAs: a time-resolved study MBetz, S Trumm, MEckardt, A Schwanhdufier, F So tier, A Leitenstorfer, MHanson, D Driscoll, A C Gossard, S Malzer and G H Dohler 277 Fermi-Dirac statistics in Monte Carlo simulations of InGaAs MOSFETs KKalna, L Yang and A Asenov 281 Monte Carlo study of the suppression of diffusion noise L Varani, E Starikov, P Shiktorov, V Gruzhinskis, C Palermo, J C Vaissiere andJPNougier 287 TeraHertz emission from nanometric HEMTs analyzed by noise spectra J-F Millithaler, L Varani, C Palermo, J Mateos, T Gonzalez, S Perez, D Pardo, WKnap, J Lusakowski, N Dyakonova, S Bollaert and A Gappy 291 Electron transport in novel Sb-based quantum cascade lasers V Spagnolo, M S Vitiello, G Scamarcio, D G Revin and J W Cockburn 295 Quantum phonon-limited high-field electron transport in semiconductors G Ferrari, E Cancellieri, P Bordone and C Jacoboni 301 Transit time and velocity distribution functions in decananometer gate-length SOI MOSFETs M J Martin and R Rengel 305 Collision of fano resonances in a molecular ring E R Hedin, A M Satanin and Y S Joe 309 Simulation of domain formation in p-Si/SiGe quantum cascade structures Zlkonic, PHarrison andR WKelsall 313 Calculation of optical gain and electron relaxation rates in single- and double- phonon resonant quantum cascade lasers in a magnetic field JRadovanovic, A Mircetic, VMilanovic, Zlkonic, D Indjin, PHarrison and RW Kelsall 317 Curvature-dependent conductance resonances in quantum cavities G J Meyer, R H Blick and I Knezevic 321 Contents xiii Mid-infrared optical absorption in germanium under intense laser fields HFuruse, YNakata, H Kubo andN Mori 325 Interface related radiative recombination on a type-II broken-gap single GalnAsSb/InAs heterojunction KA Korolev, KD Moiseev, VA Berezovets, MP Mikhailova, YP Yakovlev, R VParfeniev, C J Meinning and B D McCombe 329 Drift and difftision in superlattices within the Wannier-Stark approach MRosini andL Reggiani 333 Ballistic transport in arbitrary oriented nanowire MOSFETs MBescond, N Cavassilas, L Raymond and A Asenov 337 Scanning tunnelling microscopy of ultrathin silicon-on-insulator P P Zhang, E Tevaarwerk, B N Park, D E Savage, G Celler, I Knezevic, P G Evans, MA Eriksson and MG Lagally 341 Effect of regular and irregular potential perturbations in mesoscopic cavities P Marconcini and M Macucci 345 Simulation of electronic/ionic mixed conduction in solid ionic memories HIKwon, U Ravaioli and J D Lee 349 Full-band modeling of magnetic semiconductors SBeysserie, I Remond, S Goodnick and MSaraniti 353 Cellular Monte Carlo modeling of AlxIni.xSb/InSb quantum well transistors JBranlard, N Far alii, T Dutta-Roy, S M Goodnick, D K Ferry, SJAboud and MSaraniti 359 Non-parabolic model for the solution of 2-D quantum transverse states applied to narrow conduction channel simulation Z Yang, A Godoy, U Ravaioli and F Gdmiz 365 Self-consistent quantum transport theory of carrier capture in heterostructures TKubis, A Trellakis and P Vogl 369
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