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NASA Technical Reports Server (NTRS) 20170000475: 2015 NEPP Tasks Update for Ceramic and Tantalum Capacitors PDF

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NASA Electronic Parts and Packaging (NEPP) Program 2015 NEPP Tasks Update for Ceramic and Tantalum Capacitors Alexander Teverovsky AS&D, Inc. Work performed for Parts, Packaging, and Assembly Technologies Office, NASA GSFC, Code 562 [email protected] Deliverable to NASA Electronic Parts and Packaging (NEPP) Program to be published on nepp.nasa.gov originally presented by Alexander Teverovskyat the NASA Electronic Parts and Packaging Program (NEPP) Electronics Technology Workshop (ETW), NASA Goddard Space Flight Center in Greenbelt, MD, June 23-26, 2015. List of Acronyms AF acceleration factor IM Infant mortality BI burning-in JAXA Japan Aerospace Exploration Agency BME base metal electrode MLCC multilayer ceramic capacitor DCL direct current leakage PHS polymer hermetically sealed ESR Equivalent series resistance PME precious metal electrode FB ferrite beads PV Prokopowicz-Vaskas FR failure rate QA quality assurance HALT highly accelerated life testing RVT random vibration testing HSD hot solder dip S&Q screening and qualification HT High temperature VR rated voltage HTS high temperature storage Deliverable to NASA Electronic Parts and Packaging (NEPP) Program to be published on nepp.nasa.gov originally presented by Alexander Teverovskyat the NASA Electronic 2 Parts and Packaging Program (NEPP) Electronics Technology Workshop (ETW), NASA Goddard Space Flight Center in Greenbelt, MD, June 23-26, 2015. Reasons for NEPP Tasks on Capacitors  Capacitors constitute the majority of elements in electronic systems.  New technologies and designs appear with increasing speed. There is a need for optimization of S&Q procedures and setting adequate requirements.  Physics behind degradation and failure processes needs better understanding.  Capacitors exhibit both, infant mortality and wear-out failures, and can be used as models to refine quality assurance approaches for variety of space components. Deliverable to NASA Electronic Parts and Packaging (NEPP) Program to be published on nepp.nasa.gov originally presented by Alexander Teverovskyat the NASA Electronic 3 Parts and Packaging Program (NEPP) Electronics Technology Workshop (ETW), NASA Goddard Space Flight Center in Greenbelt, MD, June 23-26, 2015. Outline  Update on tantalum capacitors.  Use of ferrite beads as surge current limiters.  Polymer capacitors.  Random vibration testing of advanced wet capacitors.  Future work.  Update on ceramic capacitors.  Effect of cracking on degradation of MLCCs at high temperatures.  Can we use automotive industry capacitors?  Future work. Deliverable to NASA Electronic Parts and Packaging (NEPP) Program to be published on nepp.nasa.gov originally presented by Alexander Teverovskyat the NASA Electronic 4 Parts and Packaging Program (NEPP) Electronics Technology Workshop (ETW), NASA Goddard Space Flight Center in Greenbelt, MD, June 23-26, 2015. Ferrite Chip Beads as Surge Current Limiters  Contrary to inductors, FBs at high frequencies work like resistors and dissipate power in the form of heat.  NEPP report contains (https://nepp.nasa.gov/): Effect of ferrite beads on surge currents  Analysis of requirements of DLA DWG#03024 for hi-rel chips; 45 40 15uF 10V at 22V surge  Results of testing of 12 types of FB; 35 same with FB 03024-021  Data on the specific features of FBs; nt, A 2350 e  Evaluation of the robustness of FB to soldering stresses; urr 20 c 15  Behavior of FBs under multiple high current spikes. 10 5  Recommendations for reliability assurance of tantalum 0 -10 10 30 50 70 90 capacitors operating under surge current conditions. time, us  Conclusion: BLM18PG181SNID, 0603,  Due to decrease of impedance with frequency and current, 180 180ohm, 90mohm, 1.5A the effective resistance remains substantially below the 150 A 0.11 ohm value that is required to limit surge in tantalum capacitors ke, 120 no FB pi s SN1 (from 1 to 5 Ohm). ent 90 SN2  Recommendations on current derating are available at curr 60 0.16 ohm SN3 SN4 30 SN5 https://nepp.nasa.gov/. failures SN6 0 0 10 20 30 voltage, V Deliverable to NASA Electronic Parts and Packaging (NEPP) Program to be published on nepp.nasa.gov originally presented by Alexander Teverovskyat the NASA Electronic 5 Parts and Packaging Program (NEPP) Electronics Technology Workshop (ETW), NASA Goddard Space Flight Center in Greenbelt, MD, June 23-26, 2015. Polymer Tantalum Capacitors  A report on evaluation of PHS capacitors manufactured per DLA LAM DWG#13030 : (https://nepp.nasa.gov/) Literature review; analysis of requirements; characteristics, including thermal resistance; behavior of DCL under forward and reverse bias, recommendations.  Specific feature: operation of polymer capacitors requires certain amount of moisture in the case. What happens if cases dry out? Variations of capacitance, ESR, and DCL with time of HTS 120 PHS 100uF 60V during HTS at 1 PHS 100uF 60V during HTS at 1.E-06 PHS14 100uF 60V 150C 150C 100 hermetic 0.8 A non-hermetic c, citance, uF 6800 ESR, Ohm 00..46 CL_1000 se 1.E-07 pol SN7 pol SN8 a non-hermetic D p pol SN9 pol SN10 ca 40 0.2 hermetic non-hermetic pol SN11 dep SN7 dep SN8 dep SN9 dep SN10 dep SN11 20 1.E-08 0 0 200 400 600 800 1000 0 200 400 600 800 1000 0 200 400 600 800 1000 time, hr time, hr time, hr  PHS can survive 1000 hr storage at 150°C without degradation.  Non-hermetic parts degraded due to a substantial decrease in capacitance and increase in ESR caused likely by increasing resistance of the polymer. Deliverable to NASA Electronic Parts and Packaging (NEPP) Program to be published on nepp.nasa.gov originally presented by Alexander Teverovskyat the NASA Electronic 6 Parts and Packaging Program (NEPP) Electronics Technology Workshop (ETW), NASA Goddard Space Flight Center in Greenbelt, MD, June 23-26, 2015. Recommendations for Use of PHS  PHS capacitors have lower weight and ESR compared to similar case size wet tantalum capacitors and their application in power lines can assure better filtering and lower ripple currents.  Polymer capacitors would mostly benefit low-temperature applications (below 0°C) or systems where a cold start-up is required. However, additional application-specific testing are required if the parts are to be used at T < -55°C.  Self-healing capability of PHS is much worse than wet capacitors and flaws in the dielectric that might be forgiven in wet capacitors might cause catastrophic failures in PHS. This requires a close attention to the results of S&Q, specifically, to measurements of leakage currents through the testing. Deliverable to NASA Electronic Parts and Packaging (NEPP) Program to be published on nepp.nasa.gov originally presented by Alexander Teverovskyat the NASA Electronic 7 Parts and Packaging Program (NEPP) Electronics Technology Workshop (ETW), NASA Goddard Space Flight Center in Greenbelt, MD, June 23-26, 2015. Random Vibration Testing  Report is available at https://nepp.nasa.gov/  Problems in assurance robustness of capacitors under RVT have a long history.  Larger anode size increases the stress during RVT. Some test labs  Existing requirements and practice: assume this level of  MIL-PRF-39006: 1.5hr in 3 directions; 30 min spiking is acceptable monitoring every 0.5 msec “to determine intermittent open-circuiting or short-circuiting”.  Test techniques and failure criteria are not specified allowing different test labs to carry out testing differently, e.g limiting resistors from ohms to dozens of kohms, and failure criteria vary from 5% to 90% of VR.  Different set-ups have different sensitivity to short-circuiting.  Different failure criteria cause inconsistency in test results.  A single scintillation event is sufficient to cause lot failure. Deliverable to NASA Electronic Parts and Packaging (NEPP) Program to be published on nepp.nasa.gov originally presented by Alexander Teverovskyat the NASA Electronic 8 Parts and Packaging Program (NEPP) Electronics Technology Workshop (ETW), NASA Goddard Space Flight Center in Greenbelt, MD, June 23-26, 2015. RVT: Step Stress Testing Example of a part passing RVT at 34 g rms and failing at 53.44 g rms 680uF 50V Mfr.C at 34.02g rms 2.0E-05 680uF 50V Mfr.C at 53.44g rms 2.0E-05 SN1 1.5E-05 SN1 1.5E-05 SN2 SN2 SN3 A current, 1.0E-05 SSSNNN345 current, A 1.0E-05 SSNN45 5.0E-06 5.0E-06 0.0E+00 0.0E+00 0 200 400 600 800 1000 1200 0 200 400 600 800 1000 1200 time, sec time, sec Did this part fail at 10.76 g rms, at 19.64 g rms? DWG#93026 470uF 75V Mfr.A DWG#93026 470uF 75V Mfr.A 1.0E-05 1.0E-05 at 19.64g rms at 10.76g rms 8.0E-06 8.0E-06 SN1 6.0E-06 SN2 A6.0E-06 nt, A SN3 ent, urre4.0E-06 SN4 curr4.0E-06 c 2.0E-06 2.0E-06 0.0E+00 0.0E+00 0 200 400 600 800 1000 1200 0 200 400 600 800 1000 1200 time, sec time, sec Deliverable to NASA Electronic Parts and Packaging (NEPP) Program to be published on nepp.nasa.gov originally presented by Alexander Teverovskyat the NASA Electronic 9 Parts and Packaging Program (NEPP) Electronics Technology Workshop (ETW), NASA Goddard Space Flight Center in Greenbelt, MD, June 23-26, 2015. RVT: Post-testing Leakage Currents Leakage currents were monitored with time after RVT. Currents during RVT Currents after RVT 560uF 25V Mfr.A at 53.79 g rms 1.E-04 560uF 25V Mfr.A at RT, 25V 5.0E-05  Spiking during SN1 4.0E-05 SN2 1.E-05 RVT might not result SN3 A ent, A3.0E-05 SN4 urrent, 1.E-06 in DCL failures after curr2.0E-05 c the testing. 1.E-07 initial 1.0E-05 after RVT 560 µF 25 V 1.E-08 0.0E+00 1.E+1 1.E+2 1.E+3 1.E+4 1.E+5 0 200 400 600 800 1000 1200 capacitors passed time, sec time, sec HALT after RVT at 470uF 75V Mfr.A at 34.02g rms 470uF 75V Mfr.A after RVT 1.0E-05 1.E-03 53.8 g rms. 8.0E-06 A 1.E-04 5V, Parts with A 6.0E-06 7 current, 4.0E-06 rrent@ 1.E-05 SN1 excessive currents u SN2 c 1.E-06 SN3 are recovering with 2.0E-06 SN4 SN5 1.E-07 time under bias. 0.0E+00 1.E-3 1.E-2 1.E-1 1.E+0 1.E+1 1.E+2 0 200 400 600 800 1000 1200 time, sec time, hr Deliverable to NASA Electronic Parts and Packaging (NEPP) Program to be published on nepp.nasa.gov originally presented by Alexander Teverovskyat the NASA Electronic 10 Parts and Packaging Program (NEPP) Electronics Technology Workshop (ETW), NASA Goddard Space Flight Center in Greenbelt, MD, June 23-26, 2015.

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