n-Type Crystalline Silicon Photovoltaics: Technology, applications and economics

370 Pages·2023·31.08 MB·English

by  Delfina Muñoz, Radovan Kopecek

IETENERGY ENGINEERING SERIES 175
n-Type Crystalline Silicon
Photovoltaics
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Volume905 Powersystemprotection,4volumes
n-Type Crystalline Silicon
Photovoltaics
Technology, applications and economics
Edited by
Delfina Muñoz and Radovan Kopecek
The Institution of Engineering andTechnology
PublishedbyTheInstitutionofEngineeringandTechnology,London,UnitedKingdom
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Wales(no.211014)andScotland(no.SC038698).
†TheInstitutionofEngineeringandTechnology2022
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Contents
Abouttheeditors xiii
Listofcontributors xv
Acknowledgements xxvii
1 Introduction 1
Radovan Kopecek
1.1 PV2022 – history, present, and future 2
1.1.1 HowPVbecame the most cost effective electricitysource 2
1.1.2 What PVtechnology will win? 3
1.2 nPV2022 –history, present and future 5
1.2.1 Short low-cost nPVhistory 5
1.2.2 nPVstatus 8
1.2.3 nPVfuture 13
1.3 nPVbook 2022 19
1.3.1 Latest nPVpublications and presentations 19
1.3.2 Chapters of nPVbook 20
1.3.3 Summary 22
References 23
2 n-typesilicon material 27
Fiacre Rougieux, Gianluca Coletti, Sean Gaal, Bowen (Harry)Guo,
Nannan (Felix) Fu, Jordi Veirman, AnYaoLiu and
Eivind JohannesØvrelid
2.1 Introduction 27
2.2 n-type siliconfeedstock 27
2.2.1 Introduction 27
2.2.2 Polysilicon 27
2.2.3 Alternative silicon sources 28
2.2.4 Charging silicon 29
2.2.5 Impurities 30
2.2.6 Challenges 30
2.2.7 Cost structure 31
2.3 n-type ingot pulling technology 31
2.3.1 Originof Cz-growth technology 31
2.3.2 Technical principle and application 32
viii n-type crystalline silicon photovoltaics
2.3.3 Statusof ingot pulling technology (RCz) 33
2.3.4 Development of continuous crystal pulling technology (CCz) 34
2.4 n-type mono-wafer slicing technology 37
2.5 Impact of impurities on n-type solar cells 39
2.5.1 Metallic impurities 39
2.5.2 Oxide precipitates 40
2.5.3 Light elements and intrinsic defects 41
2.6 Thermal Donorsin n-type silicon solar cells 42
2.6.1 Introduction 42
2.6.2 Main features of Thermal Donors 42
2.6.3 Influence oncarrier lifetime and silicon solar cell efficiency 44
2.6.4 Signature of Thermal Donor formation inCz ingots and
strategies for their avoidance 46
2.7 Gettering inn-type silicon solar cells 49
2.7.1 n-type PERT 49
2.7.2 Polysilicon/oxide passivating contact solar cells 51
2.7.3 Interdigitated Back Contact (IBC) 51
2.7.4 Heterojunctionsolar cells 52
2.7.5 Gettering in cast-grown silicon 52
2.7.6 Summary 53
2.8 Cost of ownership 53
2.8.1 Costsin ingot production 53
2.8.2 Yield 53
2.8.3 Throughput 54
2.8.4 Recharge Cz 54
2.8.5 Continuous Cz 54
2.8.6 Wafering 54
2.9 Summaryand outlook for n-type silicon ingots and wafers 55
References 57
3 n-typesilicon solar cells 69
Se´bastien Dubois,BertrandPaviet-Salomon,Jia Chen,Wilfried Favre,
Raphae¨l Cabal, ArmandBettinelli andRadovan Kopecek
3.1 Industrial p-type solar cells 71
3.1.1 Al-BSFsolar cells 71
3.1.2 PERC solar cells 73
3.1.3 Conclusions 76
3.2 Double-side contacted n-type homojunction devices 77
3.2.1 Rear-junction structures 77
3.2.2 Front-junction structures 81
3.2.3 Conclusion 87
3.3 Polysilicon on oxide-passivated contacts solar cells 88
3.3.1 Introduction 88
3.3.2 Historical review 89
3.3.3 Workingprinciple of the poly-Si-passivated contact 90
Contents ix
3.3.4 Fabrication processes of poly-Si-passivated contacts 93
3.3.5 Integrationof poly-Si contacts into screen-printed or
large area solar cells 98
3.3.6 Toward the double-side integration of poly-Si contacts 101
3.3.7 Conclusion 104
3.4 Silicon heterojunction solar cells 104
3.4.1 Introduction 104
3.4.2 From birth to adulthood 105
3.4.3 Cell design,fabrication steps, and record efficiencies 106
3.4.4 Hetero-interface properties and electronic transport for
HJT engineering 108
3.4.5 Possible new process routesforHJT mass production
and next-generation PV 114
3.5 Back-contacted crystalline silicon solar cells 115
3.5.1 Rear-junction structures 115
3.5.2 Technologyof IBC devices 118
3.5.3 Processingof IBC solar cells 122
3.5.4 Conclusion & outlook 134
3.6 Silver usage reduction in n-type solar cells 135
3.6.1 Fine line screen-printing 135
3.6.2 Copper metallization 137
3.7 General conclusions 139
References 141
4 n-typesilicon modules 171
Andreas Schneider,Emilio Mun˜oz-Cero´n,Jorge Rabanal-Arabach,
Eszter Voroshazi, Vincent Barth and Rube´nContrerasLisperguer
4.1 General module requirements 171
4.1.1 Potential energy generation increase 171
4.1.2 State of the art 175
4.2 Characterization and performance monitoring 176
4.2.1 Electrical characterization 177
4.2.2 Relevant module characterization in the field 181
4.2.3 Performance monitoring 188
4.3 Standards and quality measures 191
4.3.1 Why do weneed standards 191
4.3.2 Standards—seen from international to national level 192
4.3.3 Overview on existing standards for type approval
and advanced testing 193
4.3.4 Overview on existing measurement standards 195
4.3.5 Majormilestone in standardization 196
4.3.6 What makes current standards problematic 197
4.3.7 Standard requirements for advanced module concepts
including bifacial solar modules 199
4.3.8 Astep in the right direction 202