Molecular Beam Epitaxy of III–V Compounds: A Comprehensive Bibliography 1958–1983

220 Pages·1984·11.275 MB·English

by  Dr. Klaus Ploog, Klaus Graf (auth.)

K. Ploog K. Graf
Molecular Beam
Epitaxy
of III-V Compounds
A Comprehensive Bibliography 1958-1983
Springer-Verlag
Berlin Heidelberg New York Tokyo 1984
Dr. Klaus Ploog
Klaus Graf
Max-Planck-lnstitut fOr FestkOrperforschung, HeisenbergstraBe 1
0-7000 Stuttgart 80, Fed. Rep. of Germany
ISBN-13: 978-3-540-13177-9 e-ISBN-13: 978-3-642-69580-3
001: 10.1007/978-3-642-69580-3
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© by Springer-Verlag Berlin Heidelberg 1984
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Preface
Epitaxial growth and electronic properties of semiconductor thin films are
becoming increasingly important for fundamental and applied research and for
device applications. This book contains a comprehensive collection of over
1500 references covering the first 25 years of molecular beam epitaxy of
III-V compound semiconductors. Molecular beam epitaxy is a versatile thin
film growth technique which emerged from the 'Three-temperature method' de
veloped in the 1950s and from surface kinetic studies performed in the
1960s. III-V semiconductors such as GaAs, AlAs, (Galn)As, InP, etc., play an
important role in the application to optoelectronic and high-speed devices.
Over the past three years the technology of molecular beam epitaxy has
spread rapidly to most major research and development laboratories through
out the world, and an increasing number of highly refined III-V semiconduc
tor structures with exactly tailored electronic properties have been pro
duced and explored for fundamental studies as well as for device appl ica
tion. The comprehensive bibliography on this dramatically expanding topic
helps chemists, engineers, materials scientists, and physicists working in
semiconductor research and development areas to sort out the important lit
erature of their particular interest. A direct reproduction of the output
of a computer printer has been used to enable rapid publication and to keep
printing costs low. The work was sponsored by the 'Bundesministerium fUr
Forschung und Technologie' of the Federal Republic of Germany.
Stuttgart, January 1984 K. Ploog . K. Graf
Subject Categories and References
Introduction ................... Year 1977 . .................... 33
Period 1958-1970 .••••••••••••••• 3 Year 1978 ..................... 47
Year 1971 ...... .... ........... 7 Year 1979 ..................... 49
Year 1972 ............ ......... 77 Year 1980 .. , .................. 59
Year 1973 ..................... 73 Year 1981 ..................... 75
Year 19711 ..................... 77 Year 1982 ..................... 707
Year 1975 .. .......... ..... .... 27 Year 1983 ..................... 749
Year 1976 ..................... 27 Author Index •••••••••••••••••• 203
Introduction 1
Introduction
Molecular beam epitaxy (MBE) has now become a viable and strongly competi
tive thin-film growth technique in many research and development laborato
ries, and a variety of materials, including semiconductors, metals and in
sulators, have been grown as epitaxial films. MBE growth of III-V compound
semiconductors and investigation of the tailored electronic properties of
refined semiconductor structures have received most attention. In the past
three years interest in molecular beam epitaxy has expanded dramatically,
and the number of MBE-related technical papers published per year is growing
exponentially (Fig. 1). This ever-increasing flood of papers makes it hard
to follow up, particularly for young materials scientists newly entering
this very exciting field. We have, therefore, compiled a bibl iography of
5PU0B0UrC-A_T_IO_N_S_ ______________________________________
==~
NUMBER OF PUBLICATIONS ON MBE
450
400
350
300
250
200
150
100
50
YEAR
1""'9- t. Diagram of the number of tecbnical papers on MBE of lll-V compoonds"published in the
perrod 1972 to'1.981. Tile -actual number in 1983 will. increase by approximately 10 percent, be
cause the collection of citations WiS finished by mid-December 1983
2 Introduction
over 1600 references spanning the first 25 years of activities in molecular
beam epitaxy of III-V compounds. References are listed with the title, using
first an annual principle of classification, with the exception of early
works, which are grouped together up to 1970. Within this annual classifi
cation, papers are 1i sted alphabetically for each year by first authors in
chronological succession. All citations are numbered consecutively. Cita
tions are limited to papers that had been published up to mid-December 1983.
English translations are cited if available. Review papers are marked by "R"
below the number. In addition to the annual classification, the papers are
subdivided into eleven subject categories that are cross-referenced. The
categories - if available in the respective year - are placed in front of
the alphabetic list. Each category is followed by the reference numbers of
the corresponding year. The subject categories used in the bibliography are:
• AlAs, GaAs, (A1Ga)As
• GaSb, InAs, Ga(AsSb), (Galn)As
• InP, (AlIn)As, (Galn)As, (Galn)(PAs)
• Growth equipment
• Growth mechanism, surface analysis
• Periodic multilayer structures
• Modulation doping
• Electrical properties
• Optical properties
• Microwave devices
• Optoelectronic devices
Following the references, all authors with their respective reference num
bers are listed alphabetically to conclude the bibliography. In addition to
the experimental work a certain number of theoretical papers dealing with
electronic properties of MBE-grown quantum well structures and with the
quantized Hall effect are included in the bibliography and marked by "T".
Period 1958-1970 3
Subject Categories and References
Period 1958-1970
AlAs, BaAs, (AIGa)As
2,4,5,6,7,B,9,11,13
SaSb, InAs, Sa(AsSb), (SaIn)As
1,3
Growth Equipment
1,2,3,4,5,7,9
Growth Mechanism, Surface Analysis
4,5,6, B, 9,10,11
Periodic Multilayer Structure
12,13
Electrical Properties
1,2,7,13
4 Ref. 1-11
1 Suenther,K.S.
Aufdampfschichten aus halbleitenden III-V-Verbindungen
Z. Naturforschg. 13a 1081-1089 (1958)
2 Davey,J.E., Pankey,T.
Structural and optical characteristics of thin BaAs
films
J. Appl. Phys. 35 2203-2209 (1964)
3 Suenther,K.S.
R Interfacial and condensation processes occurring with
multicomponent vapours
in "The use of thin films in physical
investigations", Ed J.C. Anderson (Academic,
London, 1966) 213-232 (1966)
4 Arthur,J.R.,Jr.
Vapor pressures and phase equilibria in the Ba-As
system
J. Phys. Chem. Solids 28 2257-2267 (1967)
5 Arthur,J.R.,Jr.
Interaction of As2, P2 and Bi molecular beams with
BaAs and BaP (111) surfaces
In: "Proc. Conf. Struct. Chem. Solid Surfaces", Ed.
B.A. Somorjai (Wiley, New York, 1967) 46-1-
46-17 (1967)
6 Arthur,J.R.,Jr.
Interaction of Ba and As2 molecular beams with BaAs
surfaces
J. Appl. Phys. 39 4032-4034 (1968)
7 Davey,J.E., Pankey,T.
Epitaxial BaAs films deposited by vacuum evaporation
J. Appl. Phys. 39 1941-1948 (1968)
B Arthur,J.R.,Jr., LePore,J.J.
BaAs, BaP, and BaAs(x)P(l-x) epitaxial films grown by
molecular beam deposition
J. Vac. Sci. Technol. 6 545-548 (1969)
9 Cho,A.V.
Epitaxy by periodic annealing
Surf. Sci. 17 494-503 (1969)
10 Cho,A.V.
Epitaxial growth of gallium phosphide on cleaved and
polished (111) calcium fluoride
J. Appl. Phys. 41 782-786 (1970)
11 Cho,A.V.
Morphology of epitaxial growth of BaAs by molecular
beam method: The observation of surface structures
J. Appl. Phys. 41 2780-2786 (1970)
Ref. 12-13 5
12 Esaki,L., Tsu,R.
T Superlattice and negative differential conductivity
in semiconductors
IBM J. Res. Develop. 14 61-65 (1970)
13 Lebwohl,P.A., Tsu,R.
T Electrical transport properties in a superlattice
J. Appl. Phys. 41 2664-2667 (1970)