Modeling and characterization of RF and microwave power FETs

380 Pages·2007·4.83 MB·english

by  Peter H Aaen

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MODELING AND CHARACTERIZATION OF RF
AND MICROWAVE POWER FETS
ThisisabookaboutthecompactmodelingofRFpowerFETs.Init,youwillfind
descriptions of characterization and measurement techniques, analysis methods,
and the simulator implementation, model verification, and validation procedures
thatareneededtoproduceatransistormodelthatcanbeusedwithconfidencebythe
circuitdesigner.Writtenbysemiconductorindustryprofessionalswithmanyyears’
devicemodelingexperienceinLDMOSandIII–Vtechnologies,thisisthefirstbook
toaddressthemodelingrequirementsspecifictohigh-powerRFtransistors.
A technology-independent approach is described, addressing thermal effects,
scalingissues,nonlinearmodeling,andin-packagematchingnetworks.Theseare
illustratedusingthecurrentmarket-leadinghigh-powerRFtechnology,LDMOS,as
wellaswithIII–Vpowerdevices.ThisbookisacomprehensiveexpositionofFET
modeling,andisamust-haveresourceforseasonedprofessionalsandnewgraduates
intheRFandmicrowavepoweramplifierdesignandmodelingcommunity.
All three authors work in the RF Division at Freescale Semiconductor, Inc.,
in Tempe Arizona. Peter H. Aaen is Modeling Group Manager; Jaime A.
Pla´ is Design Organization Manager; and John Wood is Senior Technical
ContributorresponsibleforRFCADandModeling,andaFellowoftheIEEE.
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TheCambridgeRFandMicrowaveEngineeringSeries
SeriesEditor
SteveC.Cripps,HywaveAssociates
PeterAaen,JaimePla´ andJohnWood,ModelingandCharacterizationofRFand
MicrowavePowerFETs
DominiqueSchreursetal.,RFPowerAmplifierBehavioralModeling
SorinVoinigescuandTimothyDickson,High-FrequencyIntegratedCircuits
J.StephensonKenney,RFPowerAmplifierDesignandLinearization
AllenPodellandSudiptoChakraborty,PracticalRadioDesignTechniques
PaulYoung,RFandMicrowaveNetworks:MeasurementandAnalysis
DominiqueSchreurs,MicrowaveTechniquesforMicroelectronics
ii
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MODELING AND CHARACTERIZATION
OF RF AND MICROWAVE
POWER FETS
PETER H. AAEN
FreescaleSemiconductor,Inc
JAIME A. PLA´
FreescaleSemiconductor,Inc
JOHN WOOD
FreescaleSemiconductor,Inc
iii
CAMBRIDGEUNIVERSITY PRESS
Cambridge, New York, Melbourne, Madrid, Cape Town, Singapore, São Paulo
Cambridge University Press
The Edinburgh Building, Cambridge CB2 8RU, UK
Published in the United States of America by Cambridge University Press, New York
www.cambridge.org
Information on this title: www.cambridge.org/9780521870665
© Cambridge University Press 2007
This publication is in copyright. Subject to statutory exception and to the provision of
relevant collective licensing agreements, no reproduction of any part may take place
without the written permission of Cambridge University Press.
First published in print format 2007
ISBN-13 978-0-511-37851-5 eBook (NetLibrary)
ISBN-13 978-0-521-87066-5 hardback
Cambridge University Press has no responsibility for the persistence or accuracy of urls
for external or third-party internet websites referred to in this publication, and does not
guarantee that any content on such websites is, or will remain, accurate or appropriate.
To our families: Ljubica & Luka; Sandra, Andrea & Gaby; Gayle, Diane &
Audrey.
v

Contents
Preface page ix
Acknowledgments xv
1 RF and Microwave Power Transistors 1
1.1 Introduction 1
1.2 Outline of the Transistor Modeling Process 4
1.3 A Review of the Commercial Applications of
High-Power Transistors 6
1.4 Silicon Device Technology Development 7
1.5 Compound Semiconductor (III–V) Device Technology 11
1.6 The Basics of FET Operation 17
1.7 Packages 38
1.8 Trends and Future Directions 44
Appendix 1.1 46
References 47
2 Compact Modeling of High-Power FETs 51
2.1 Introduction 51
2.2 Physical Modeling 53
2.3 Compact Models 54
2.4 Memory Effects 61
2.5 Conclusions 68
References 68
3 Electrical Measurement Techniques 71
3.1 Introduction 71
3.2 Electrical Reference Planes 72
3.3 Measurement Environment 85
3.4 Measurements for Model Extraction 100
3.5 Measurements for Validation 109
vii
viii Contents
References 118
4 Passive Components: Simulation and Modeling 123
4.1 Introduction 123
4.2 Packages 123
4.3 Bondwires 126
4.4 MOS Capacitor Modeling 138
4.5 Example of the Use of Segmentation Techniques 142
References 147
5 Thermal Characterization and Modeling 149
5.1 Introduction 149
5.2 Methods of Heat Transfer 152
5.3 Thermal Measurements 160
5.4 Thermal Simulations 171
5.5 Compact Models 175
References 179
6 Modeling the Active Transistor 183
6.1 Introduction 183
6.2 Modeling the Manifolds and Extrinsic Components 187
6.3 Scaling Considerations 202
6.4 Modeling the Intrinsic Transistor 205
6.5 Including Frequency Dispersive Effects in the Transistor
Model 242
6.6 Including Statistical Variations in the Compact Model 253
6.7 Closing Remarks 256
References 257
7 Function Approximation for Compact Modeling 263
7.1 Introduction 263
7.2 Functions and Function Approximation 265
7.3 Practical Methods for Function Approximation 270
7.4 Conclusions 293
References 294
8 Model Implementation in CAD Tools 297
8.1 Introduction 297
8.2 An Overview of the Various Classes of Simulator 298
8.3 Overview of the Model Implementation Process 307
8.4 Model Verification Process 310
8.5 Types of Model Implementation 312
8.6 Building a Model Library 318