Microwave Semiconductor Devices

480 Pages·1991·5.788 MB·English

by  Sigfrid Yngvesson (auth.)

MICROWAVESEMICONDUCTOR
DEVICES
THE KLUWER INTERNATIONAL SERIES
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MICROWAVESEMIDONDUCTOR
DEVICES
by
Sigfrid Y ngvesson
University ofM assachusetts @Amherst
...
"
Springer-Science+Business Media, LLC
Library ofCongress Cataloging·in·Publication Data
Yngvesson, K. S.
Microwave Semiconductor Devices/ by Sigfrid Yngvesson
p. cm.·· (The Kluwer international series in engineering and
computer science; 134. VLSI, computer architecture, and digital
signal processing)
Includes bibliographical references and index.
ISBN 978-1-4613-6773-4 ISBN 978-1-4615-3970-4 (eBook)
DOI 10.1007/978-1-4615-3970-4
1. Semiconductors. 2. Microwave devices. 1. Title. II. Series:
Kluwer international series in engineering and computer science ;
SECS 134. III. Series: Kluwer international series in engineering
and computer science. VLSI, computer architecture, and digital
signal processing.
TK7871.85.Y65 1991
621.381'52--dc20 91-11723
CIP
Copyright © 1991 by Springer Science+Business Media New York
Originally published by Kluwer Academic Publishers in 1991
Softcover reprint of the hardcover 1s t edition 1991
AII rights reserved. No part of this publication may be reproduced, stored in a retrieval
system or transmitted in any form or by any means, mechanical, photo-copying, record ing,
or otherwise, without the prior written permission of the publisher, Springer-Science+
Business Media, LLC.
Printed on acid-free paper.
This book is dedicated in memory of'my parents, Yngve Karlsson
and Gurli Rang Karlsson
Table of Contents
PREFACE xi
CHAPTER 1
Review of semiconductor physics and devices 1
Introduction 1
Energy bands 1
Statistical properties of electrons and holes 8
Carrier transport 9
Carrier recombination and generation 14
P-N-junctions 15
Schottky barriers 17
Reverse break-down 18
Phonons 19
References 21
Further reading 21
CHAPTER 2
Transferred electron devices (TED)
- GUNN devices 23
Introduction 23
Electron transfer and negative differential
mobility 25
High-field dipole domains in GUNN devices 35
Modes of operation of GUNN devices 42
Indium phosphide transferred electron devices/
millimeter wave operation of TED's 48
Example: Growth rate of a high-field dipole
Domain - the "equal areas" rule 50
Stationary domain at the anode 53
Problems, Chapter 2 53
References 56
Further reading 58
CHAPTER 3
IMPATT (Impact Avalanche Transit Time) devices 59
Introduction 59
Operation of IMPA TT devices-physical discussion 61
Small-signal theory of IMPA TT device impedance 71
Estimate of the power conversion efficiency of IMPATT
devices - a simple large signal model 77
Doping profiles for IMPA TT diodes 81
An analytical large-signal model of IMPA TT devices 83
Non-steady state large signal models for IMPATT devices 91
Problems, Chapter 3 96
References 99
viii Microwave Semiconductor Dellice.
Additional reading 100
CHAPTER 4
Tunneling devices 103
Tunnel diodes 103
Resonant tunneling devices 107
Problems, Chapter 4. 124
References 125
Further reading 126
CHAPTERS
Fundamental limitations on power output
from solid-state microwave devices 127
Introduction 127
The thermal limit 127
The electronic limit 136
Measured data for rf power 139
Problems, Chapter 5 139
References 141
CHAPTER 6
Basic properties and circuit aspects
of oscillators and amplifiers based
on two-terminal devices 143
Introduction 143
A basic oscillator model 143
Injection locking of oscillators 148
Model for FM-and AM-noise in oscillators 150
Actual noise observed in two-terminal solid state devices 155
Electronic tuning of solid state oscillators 167
Examples of actual circuits and impedance diagrams for
GUNN and IMPATT oscillators 170
Negative resistance devices used as amplifiers 173
Problems, Chapter 6 178
References 179
Further reading 181
CHAPTER T
Power-combining 183
Chip-level power-combining 186
Circuit level power combining 187
Spatial (quasi-optical) power-combining 194
Problems, Chapter 7 203
References 203
Further reading 206
CHAPTERS
Review of noise processes and noise
Table 0/ Content.. ix
concepts relevant to microwave
semiconductor devices 207
Introduction 207
Thermal noise - noise figure and equivalent noise temperature 207
Shot noise 218
Diffusion noise 220
Flicker noise, or l/F-noise 223
References 227
Further reading 228
CHAPTER 9
Diode applications to microwave
frequency conversion and control 229
Introduction 229
Frequency-conversion devices 229
Semi-conductor diode detectors 230
Schottky barrier diodes 237
Semi-conductor diode mixers: intrinsic conversion loss 248
Parasitic element effects in semiconductor mixers 256
Noise figure/noise temperature of mixer receivers 258
Other types of mixers 272
Noise temperature versus frequency for mixers 273
Varactor harmonic multipliers 274
PIN diodes and microwave control devices 283
Problems, Chapter 9 288
References 290
Further reading 295
CHAPTER 10
MESFET Devices 297
Introduction 297
1-V-characteristics of MESFETs 298
Small-signal equivalent circuit model 313
Ultra-fast electrons, or how ballistic can an electron be 323
The Fukui noise model for MESFETs 332
The Pucel-Haus-Statz noise model 335
Noise in FET oscillators 341
Power-frequency limitations in MESFETs 345
Overview 355
Problems, Chapter 10 356
References 358
Further reading 362
CHAPTER 11
BFETs - Beterojunction Field Effect Transistors 363
Introduction 363
Discussion of the 1-V-characteristics of a HFET 368
x Microwave Semiconductor Device,
Transconductance and cut-off frequencies for HFETs 379
Indium-based heterostructures for HFETs 386
Microwave equivalent circuit for HFETs 394
Noise modeling of HFETs -comparison with MESFETs 394
Review of noise data for HFETs and MESFETs 403
HFET power amplifiers 403
HFET oscillators 408
Overview 410
Problems, Chapter 11 410
References 411
Further reading 414
CHAPTER 12
Bipolar microwave transistors 417
Introduction 417
Basic relations for microwave BJTs 418
Equivalent circuit of the BJT - frequency-performance 422
Noise modeling of BJTs 424
BJT power amplifiers and oscillators 425
Heterojunction bipolar transistors (HBTs) 429
Structure and I-Y-characteristics of HBTs 431
Equivalent circuit and cut-off-frequencies of HBTs 432
HBTs with other material combinations than AIGaAs/GaAs 435
Noise properties of HBTs 440
HBT power amplifiers and oscillators 440
Overview 443
Problems, Chapter 12 443
References 444
Further reading 448
CHAPTER 13
Overview of conventional and novel devices 449
Hot electron transistors 450
Resonant tunneling transistors 452
Permeable base transistors 454
Review of the performance of microwave semiconductor
devices - 1990 456
Conclusion 460
References 460
Further reading 463
Index 465
PREFACE
We have reached the double conclusion: that invention is
choice, that this choice is imperatively governed by the sense of
scientific beauty. Hadamard (1945), Princeton University Press,
by permission.
The great majority of all sources and amplifiers of microwave energy,
and all devices for receiving or detecting microwaves, use a semiconductor
active element. The development of microwave semiconductor devices, de
scribed in this book, has proceeded from the simpler, two-terminal, devices
such as GUNN or IMPATT devices, which originated in the 1960s, to the
sophisticated monolithic circuit MESFET three-terminal active elements,
of the 1980s and 1990s. The microwave field has experienced a renais
sance in electrical engineering departments in the last few years, and much
of this growth has been associated with microwave semiconductor devices.
The University of Massachusetts has recently developed a well recognized
program in microwave engineering. Much of the momentum for this pro
gram has been provided by interaction with industrial companies, and the
influx of a large number of industry-supported students. This program
had a need for a course in microwave semiconductor devices, which covered
the physical aspects, as well as the aspects of interest to the engineer who
incorporates such devices in his designs. It was also felt that it would be im
portant to introduce the most recently developed devices (HFETs, HBTs,
and other advanced devices) as early as possible. The lecture notes used by
the author in teaching this course have gradually developed into the present
book, which thus has been tested by interaction with several generations of
students. As appropriate for a text-book, problems are included at the end
of each chapter. At the end of the course, students have been asked to write
a term paper, which affords them an opportunity to delve more deeply into
a particular device topic. The more advanced material toward the end of
most chapters can provide a starting point for such studies. Because of its