Microscopy of semiconducting materials: proceedings of the 14th conference, April 11-14, 2005, Oxford, UK

543 Pages·2006·29.8 MB·English

by  A.G. Cullis

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andM.Oberlack
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ComputationalMethodsandSystems
Proceedingsofthe14thConference,
inModernElectrodynamics
April11–14,2005,Oxford,UK
ATributetoLeopoldB.Felsen
Editors:A.G.CullisandJ.L.Hutchison
Editors:P.RusserandM.Mongiardo
Volumes60–86arelistedattheendofthebook.
A.G. Cullis J.L. Hutchison
(Eds.)
Microscopy
of Semiconducting
Materials
Proceedings of the 14th Conference,
April 11–14, 2005, Oxford, UK
With489Figures
123
ProfessorA.G.Cullis
DepartmentofElectronic
andElectricalEngineering
UniversityofSheffield
MappinStreet
Sheffield,S13JD,UK
DrJ.L.Hutchison
DepartmentofMaterials
UniversityofOxford
ParksRoad
Oxford,OX13PH,UK
PublishedinassociationwithCanopusPublishingLimited,Bristol,UK
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This volume contains the invited and contributed papers presented at the fourteenth
conference on ‘Microscopy of Semiconducting Materials’ held at the University of Oxford on
11–14 April 2005. The event was organised with sponsorship by the Royal Microscopical
Society, the Electron Microscopy and Analysis Group of the Institute of Physics and the
Materials Research Society. This conference series focuses upon the most recent
international advances in semiconductor studies carried out by all forms of microscopy: its
truly international flavour was evident in that it was attended by delegates from approaching
20 countries.
Semiconducting materials allow the fabrication of advanced (opto)electronic devices
ranging from ultrahigh speed FET and bipolar transistors to light emitters and detectors
covering a very wide range of photon frequencies. However, to achieve the ultimate
performance it is essential to optimise the structures of transistors with feature sizes often of
less than 0.1 microns and also to understand the nature of, for example, advanced alloys of
III-V and especially III-nitride materials. Efficient control of semiconductor processing on
the nanometre scale is a vital concern and in order to achieve all of these goals, it is essential
to exploit the techniques of advanced microscopy to characterise the materials at close to the
atomic scale. For the highest spatial resolution, electron microscopy in its various forms
provides the most wide-ranging information. Recent advances in instrumentation, from lens
aberration correction in both TEM and STEM instruments and atomic level electron energy
loss spectroscopy, to various scanned probe microscopy techniques, were all covered with
both overviews and new results being presented. The work described at the present
conference thus demonstrates the high level of on-going world-wide activity in all these
areas.
Each camera-ready manuscript submitted for publication in this volume has been
reviewed by at least two referees and modified accordingly; the editors are very grateful to
the following colleagues for their rapid and careful refereeing work of the papers:
P E Batson, H Bender, P D Brown, N Browning, C B Carter, H Cerva, D Cherns, B Daudin,
D Donnet, R Dunin-Borlowski, K Durose, M W Fay, K Furuya, F Glas, P J Goodhew,
A Gustafsson, C Hetherington, C J Humphreys, P Koenraad, A Lauwers, S Mahajan,
C Norenberg, Y Ohno, F M Ross, M Schowalter, E Spiecker, P Sutter, R Timm, T Walther,
Y-L Wu.
The planning and organisation of an individual conference takes place over a two year
cycle and work on the present meeting has been underpinned by Lucy Haworth, who
deserves our very special thanks. We are also grateful for the assistance ably provided by
Keith Fraser (University of Oxford) in meticulously correcting the proof copies of many
manuscripts.
A G Cullis
October 2005" J L Hutchison"
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Structural properties of GaN quantum dots *Kpxkvgf"rcrgt+
B Daudin, J-L Rouvière, D Jalabert, J Coraux, V Favre-Nicolin, H Renevier, M H Cho,
K B Chung, D W Moon, M G Proietti, J M Llorens, N Garro, A Cros
and A García-Cristóbal ............................................................................................................ 3
Stranski-Krastanov growth for InGaN/GaN: wetting layer thickness changes
N K van der Laak, R A Oliver, M J Kappers, C McAleese and C J Humphreys .................... 13
Investigation of InGa N islands with electron microscopy
x 1-x
A Pretorius, T Yamaguchi, M Schowalter, R Kröger, C Kübel, D Hommel
and A Rosenauer ..................................................................................................................... 17
First stage of nucleation of GaN on (0001) sapphire
Y B Kwon, J H Je, P Ruterana and G Nouet ........................................................................... 21
InGaN-GaN quantum wells: their luminescent and nano-structural properties
J S Barnard, D M Graham, T M Smeeton, M J Kappers, P Dawson, M Godfrey
and C J Humphreys ................................................................................................................. 25
Evolution of InGaN/GaN nanostructures and wetting layers during annealing
R A Oliver, N K van der Laak, M J Kappers and C J Humphreys ......................................... 29
Origins and reduction of threading dislocations in GaN epitaxial layers *Kpxkvgf"rcrgt+"
S Mahajan ............................................................................................................................... 33
Oxygen segregation to nanopipes in gallium nitride
M Hawkridge and D Cherns ................................................................................................... 45
Strain relaxation in (Al,Ga)N/GaN heterostructures
P Vennéguès, J M Bethoux, Z Bougrioua, M Azize, P De Mierry and O Tottereau ............... 51
A TEM Study of AlN Interlayer Defects in AlGaN/GaN Heterostructures
P D Cherns, C McAleese, M J Kappers and C J Humphreys ................................................. 55
VIII Contents
Reduction of threading dislocation density using in-situ SiN interlayers
x
R Datta, M J Kappers, J S Barnard and C J Humphreys ....................................................... 59
The nucleation structure for cracks in AlGaN epitaxial layers
R T Murray, P J Parbrook, G Hill and I M Ross .................................................................... 63
Microstructural and optical characterisation of InN layers grown by MOCVD
P Singh, P Ruterana, G Nouet, A Jain, J M Redwing and M Wojdak .................................... 67
Structural properties of InN thin films grown with variable growth conditions on
GaN/Al O by plasma-assisted MBE
2 3
A Delimitis, Ph Komninou, Th Kehagias, Th Karakostas, E Dimakis, A Georgakilas
and G Nouet ............................................................................................................................ 71
Growth and surface characterization of piezoelectric AlN thin films on silicon (100)
and (110) substrates
S Saravanan, E G Keim, G J M Krijnen and M Elwenspoek .................................................. 75
Characterization and structuring of nitride-based heterostructures for vertical-cavity
surface-emitting lasers
R Kröger, C Kruse, J Dennemarck, D Hommel and A Rosenauer ......................................... 79
Characterization of defects in ZnS and GaN
J Deneen, S Kumar, C R Perrey and C B Carter .................................................................... 83
Rctv"KK"Grkvcz{<"Uknkeqp/Igtocpkwo"Cnnq{u"
"
Use of moire fringe patterns to map relaxation in SiGe on insulator structures fabricated
on SIMOX substrates
A Domenicucci, S Bedell, R Roy, D K Sadana and A Mocuta ................................................ 89
TEM measurement of the epitaxial stress of Si/SiGe lamellae prepared by FIB
M Cabié, G Benassayag, A Rocher, A Ponchet, J M Hartmann and F Fournel .................... 93
Strain relaxation of SiGe/Si heterostructures by helium ion implantation and subsequent
annealing: Helium precipitates acting as dislocation sources
Norbert Hueging, Martina Luysberg, Knut Urban, Dan Buca, Bernd Hollaender,
Siegfried Mantl, Matcio J Morschbacher, Paulo F P Fichtner, Roger Loo
and Matty Caymax .................................................................................................................. 97
TEM investigation of Si/Ge multilayer structure incorporated into MBE grown
Si whiskers
N Zakharov, P Werner, G Gerth, L Schubert, L Sokolov and U Gösele ............................... 103
Local compositional analysis of GeSi/Si nanoclusters by scanning Auger microscopy
G A Maximov, D E Nikolitchev and D O Filatov ................................................................. 107
Contents IX
A study of processed and unprocessed dual channel Si/SiGe MOSFET device structures
using FIB and TEM
A C K Chang, D J Norris, I M Ross, A G Cullis, S H Olsen and A G O’Neill ..................... 111
Rctv"KKK"Grkvcz{<"Itqyvj"cpf"Fghgev"Rjgpqogpc"
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Novel TEM method for large-area analysis of misfit dislocation networks in
semiconductor heterostructures *Kpxkvgf"rcrgt+
E Spiecker, J Schöne, S Rajagopalan and W Jäger .............................................................. 117
"
Beta to alpha transition and defects on SiC on Si grown by CVD
F M Morales, Ch Förster, O Ambacher and J Pezoldt ......................................................... 131
"
Strain relaxation and void reduction in SiC on Si by Ge predeposition
F M Morales, P Weih, Ch Wang, Th Stauden, O Ambacher and J Pezoldt .......................... 135
"
Defect generation in high In and N content GaInNAs quantum wells: unfaulting of
Frank dislocation loops
M Herrera, D González, J G Lozano, M Hopkinson, M Gutierrez, P Navaretti,
H Y Liu and R García ........................................................................................................... 139
"
Structural characterisation of spintronic GaMnAs and GaMnN heterostructures grown by
molecular beam epitaxy
M W Fay, Y Han, S V Novikov, K W Edmonds, K Wang, B L Gallagher,
R P Campion, C T Foxon and P D Brown ............................................................................ 143
"
TEM determination of the local concentrations of substitutional and interstitial Mn
and antisite defects in ferromagnetic GaMnAs
F Glas, G Patriarche, L Thevenard and A Lemaître ............................................................ 147
"
First-principles calculations of 002 structure factors for electron scattering in strained
In Ga As
x 1-x
A Rosenauer, M Schowalter, F Glas and D Lamoen ............................................................ 151
"
Structural characterisation of MBE grown zinc-blende Ga Mn N/GaAs(001) as a
1-x x
function of Ga flux
Y Han, M W Fay, P D Brown, S V Novikov, K W Edmonds, B L Gallagher,
R P Campion and C T Foxon ................................................................................................ 155
"
Magic matching in semiconductor heterojunctions
B Pécz, Á Barna, V Heera and W Skorupa ........................................................................... 159
"
Changes in plasmon peak position in a GaAs/In Ga As structure
0.2 0.8
R Beanland, A M Sánchez, A J Papworth, M H Gass and P J Goodhew ............................. 163
X Contents
Investigation of the electrical activity of dislocations in ZnO epilayers by transmission
electron holography
E Müller, P Kruse, D Gerthsen, R Kling and A Waag .......................................................... 167
A TEM study of Mn-doped ZnO layers deposited by RF magnetron sputtering on
(0001) sapphire
M Abouzaid, P Ruterana, G Nouet, C Liu, F Yun, B Xiao, S-J Cho, Y-T Moon
and H Morkoç ....................................................................................................................... 171
Rctv"KX"Jkij"Tguqnwvkqp"Oketqueqr{"cpf"Pcpqcpcn{uku"
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Aberration-corrected HREM/STEM for semiconductor research *Kpxkvgf"rcrgt+
C J D Hetherington, D J H Cockayne, R C Doole, J L Hutchison, A I Kirkland
and J M Titchmarsh .............................................................................................................. 177
Spherical aberration correction and exit-plane wave function reconstruction: Synergetic
tools for the atomic-scale imaging of structural imperfections in semiconductor materials
K Tillmann, A Thust, L Houben, M Luysberg, M Lentzen and K Urban .............................. 183
Strain mapping from HRTEM images
P L Galindo, A Yáñez, J Pizarro, E Guerrero, T Ben and S I Molina .................................. 191
Quantification of the influence of TEM operation parameters on the error of HREM
image matching
J Pizarro, E Guerrero, P Galindo, A Yañez, T Ben and S I Molina ..................................... 195
ConceptEM: a new method to quantify solute segregation to interfaces or planar defect
structures by analytical TEM and applications to inversion domain boundaries in doped
zinc oxide
T Walther, A Re(cid:254)nik and N Daneu ........................................................................................ 199
Electron holography of doped semiconductors: when does it work and is it quantitative?
*Kpxkvgf"rcrgt+
R E Dunin-Borkowski, A C Twitchett, P A Midgley, M R McCartney, T Kasama,
D Cooper and P K Somodi .................................................................................................... 203
Why does a p-doped area show a higher contrast in electron holography than a n-doped
area of the same dopant concentration?
A Lenk, U Muehle and H Lichte ............................................................................................ 213
Interference electron microscopy of reverse-biased p-n junctions
P F Fazzini, P G Merli, G Pozzi and F Ubaldi ..................................................................... 217
Off-axis electron holography of focused ion beam milled GaAs and Si p-n junctions
D Cooper, A C Twitchett, I Farrer, D A Ritchie, R E Dunin-Borkowski
and P A Midgley .................................................................................................................... 221