Microscopy of semiconducting materials 2003 : proceedings of the Institute of Physics Conference [on Microscopy of Semiconducting Materials], Cambridge University, 31 March - 3 April 2003 ; MSM XIII

705 Pages·2003·203.3 MB·English

by  Midgley

Microscopy of Semiconducting Materials 2003
Other titles in the series
The Institute of Physics Conference Series regularly features papers presented at
important conferences and symposia highlighting new developments in physics and
related fields. Previous publications include:
179 Electron Microscopy and Analysis 2003
Papers presented at the Institute of Physics Electron Microscopy and Analysis Group
Conference. Oxford, UK
Edited by S McVitie and D McComb
177 Optical and Laser Diagnostics 2002
Papers presented at the First International Conference, London, UK
Edited by C Arcoumanis and K T V Grattan
174 Compound Semiconductors 2002
Papers presented at the 29th International Symposium on Compound Semiconductors,
Lausanne, Switzerland
Edited by M Ilegems, G Weimann and J Wagner
173 GROUP 24: Physical and Mathematical Aspects of Symmetries
Papers presented at the 24th International Colloquium, Paris, France
Edited by J-P Gazeau, R Kerner, J-P Antoine, S Metens and J-Y Thibon
172 Electron and Photon Impact Ionization and Related Topics 2002
Papers presented at the International Conference, Metz, France
Edited by L U Ancarani
171 Physics of Semiconductors 2002
Papers presented at the 26th International Conference, Edinburgh, UK
Edited by A R Long and J H Davies
170 Compound Semiconductors 2001
Papers presented at the 28th International Symposium on Compound Semiconductors,
Tokyo, Japan
Edited by Y Arakawa, Y Hirayama, K Kishino and H Yamaguchi
169 Microscopy of Semiconducting Materials 2001
Papers presented at the 12th International Conference on Microscopy of
Semiconducting Materials, Oxford, UK
Edited by A G Cullis and J L Hutchison
168 Electron Microscopy and Analysis 2001
Papers presented at the Institute of Physics Electron Microscopy and Analysis Group
Conference, Dundee, UK
Edited by C J Kiely and M Aindow
Microscopy of Semiconducting Materials 2003
Proceedings of the Institute of Physics Conference,
Cambridge University, 31 March-3 April2003
Edited by
A G Cullis
and
P A Midgley
s
MM
XIII
Institute of Physics Conference Series Number 180
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Preface
This volume contains the invited and contributed papers presented at the conference on
'Microscopy of Semiconducting Materials' held at the University of Cambridge on 31 March
- 3 April 2003. The event was organised with sponsorship by the Electron Microscopy and
Analysis Group of the Institute of Physics, the Royal Microscopical Society and the Materials
Research Society. This conference was the thirteenth in the series that focuses on the most
recent international advances in semiconductor studies carried out by all forms of
microscopy.
Modem electronic devices rely upon ever greater miniaturization of components and,
indeed, semiconductor processing is now approaching the domain of nanotechnology.
Studies of devices in this regime can only be carried out with the most advanced forms of
microscopy and the present conference highlighted developments in the most important
associated areas. High resolution imaging and nanoanalysis were greatly in evidence, with
special application to quantum-scale structures. The advent of electron microscope lens
correctors for the highest performance work was reviewed in-depth in a special evening
session. The exploitation of advanced scanning probe microscopy was also featured. There
was substantial emphasis upon studies of the epitaxial growth of semiconductor layers
relating to both III-V materials and those from group IV, especially Si-Ge alloy. In addition,
of course, the results of advanced Si device processing were covered in some detail. Overall,
the great activity across the world in semiconductor studies was evident at the conference in
work presented and discussed by delegates from more than 20 countries
Each camera-ready manuscript submitted for publication in this volume has been
reviewed by at least two referees and modified accordingly. The editors are extremely
grateful to the following scientific referees for their rapid and careful work:
M Albrecht, J Barnard, R .Beanland, H Bender, P D Brown, M R Castell, D Chems,
A J Craven, D Dujardin, R Dunin-Borkowski, K Durose, R Feenstra, D Gerthsen, F Glas,
A Gustafsson, A Howie, M Hopkinson, M J Hytch, B J Inkson, J K<1tcki, P Koenraad,
Z Liliental-Weber, A Lupini, M A Migliorato, D Muller, R T Murray, W Neumann,
D J Norris, J P O'Neill, P Pirouz, V Raineri, J M Rodenburg, F M Ross, I M Ross,
V Stolojan, E Sutter, C Trager-Cowan, T Walther, M Weyland, P Werner, E Yakimov,
M Yeadon, D Zhi and E Zschech.
The conference organisation over the whole two-year cycle was underpinned by the
meticulous work carried out by C Pantlin (Institute of Physics), who deserves very special
thanks. Assistance in correcting the proof copies of many manuscripts was ably provided by
N Adaoui (University of Cambridge).
A G Cullis, P A Midgley
October 2003

Contents
Preface v
High Resolution Microscopy and Microanalysis
Exploring the limits of transistor scaling with electron microscopy
D A Muller, F H Baumann, PM Voyles and G D Wilk (invited)
Measurement of the displacement field around an edge dislocation in silicon to 3 pm by
high-resolution electron microscopy
M J Hytch, J-L Putaux and J-M Penisson 11
One-angstrom-resolution element mapping by phase contrast ARHVEM technique
C Iwamoto, X Q Shen, H Okumura, H Matsuhata and Y Ikuhara 15
Present state of the composition evaluation of ternary semiconductor nanostructures by
lattice fringe analysis
A Rosenauer, D Gerthsen, D VanDyck. S Van Aert and A J Den Dekker 19
Neural networks applied to the determination of thickness and defocus from high
resolution transmission electron microscopy images
P L Galindo, A Ponce and S I Molina 23
Electron energy loss spectroscopic profiling of semiconductor hetero-and
nano-structures: theory, implementation, applications
T Walther 27
Combined experimental and theoretical study of EEL spectroscopy of dislocations in
wide band gap semiconductors
A Gutilirrez-Sosa, U Bangert, C J Fall, R Jones, A T Blumenau, P R Briddon and
T Frauenheim 33
Investigations of core level states in epitaxial grown Si layers by electron energy loss
spectrometry
M Stdger-Pollach, C Hebert, E C Karl-Riickert, P Schattschneider, B Rau, S Gall and
H W Zandbergen 3 7
Electron energy loss line spectral and TEM analysis ofheterojunctions
V Stolojan, M J Whiting, M J Goringe, M J Kelly and S R P Silva 41
Determination of the mean inner potential in III-V semiconductors by electron holography
P Kruse, A Rosenauer and D Gerthsen 45
Electron beam illumination effects on electrostatic potential mapping in holographic
imaging of semiconductors in TEM
L Houben, M Luysberg and T Brammer 49
viii
The application of advanced TEM techniques to the characterisation of an asymmetric
spacer layer tunnel diode
D Cooper, A C Twitchett, R E Dunin-Borkowski, D Zhi, M J Kelly and P A Midgley 53
A comparative study of the structural properties oflnGaN/GaN quantum wells determined
by X-ray diffraction, high-angle annular dark-field imaging and energy-filtered TEM
J S Barnard, ME Vickers, M J Kappers, E J Thrush and C J Humphreys 57
Indium rich clusters in MOCVD InGaN/GaN: high resolution electron microscopy study
and finite element modelling
G Jurczak, S Kret, P Ruterana, M Maciejeswki, P Dluzewski, A M Sanchez and
M A di Forte Poisson 61
Carbon in multicrystalline ribbon-silicon for solar cell applications
M Werner, K Scheerschmidt, E Pippel, C Funke and H J Moller 65
Combined HREM and theoretical analysis of SiC/Si interfaces
V Grillo, S Frabboni, G Cicero, G Savini and A Catellani 69
Characterization of a porous silicon carbide layer produced on a 6H-SiC substrate: TEM
(XHREM) and EDX studies
C J D Hetherington, J L Hutchison, A A Lebedev, G N Mosina, N S Savkina, J Sloan and
L M Sorokin 73
Modelling and HRTEM computer simulation of facetting of Sn02 nanostructures
deposited by spray pyrolysis on glass substrates
E Rossinyol, J Arbiol, F Peir6, A Cornet, J R Morante, V Brinzari, G Korotcenkov and
V Golovanov 79
Self-Organised and Quantum Domain Structures
Structure and composition analysis ofnanotubes and ceramics by a new 300 kV
energy-filtered FEGTEM
MY Banda, D Golberg, M Mitome, Y Kita mi, K Kurashima, T Kaneyama, Y Okura and
M Naruse (invited) 83
Determination of size, shape and composition of buried InAs/GaAs quantum dots:
scanning transmission electron microscopy vs. in-plane X-ray scattering
D Zhi, P F Fewster, D W Pashley, B A Joyce, P J Goodhew and T S Jones 91
A TEM study of compositional inhomogeneity in semiconductor quantum dots
Y Androussi, T Benabbas, D Jacob and A Lefebvre 95
GeSi quantum dots: the effect of alloying on the shape transformation
CLang, D Nguyen-Manh and D J H Cockayne 99
Optimisation of the optical emission of bilayers of quantum dots
M A Migliorato, P Navaretti, D J Norris, S L Liew, A G Cull is, H-Y Liu, M J Steer and
M Hopkinson I 03
Establishing MOVPE growth oflnAs/GaAs quantum dots in a commercial 8x3"
multi wafer reactor for optoelectronic applications
V Drouot, R Bean/and, C C Button, X Y Wang, J P R David, F F Ouali and A J Holden 107
ix
Study of defects in GaSb/GaAs quantum dots by TEM
I Hausler, H Kirmse, W Neumann, L Miiller-Kirsch and D Bimberg Ill
(Si,Ge) islands on Si: A TEM study of growth-correlated structural and chemical
properties
H Kirmse, R Schneider, R Otto, W Neumann, M Hanke, M Schmidbauer, R Kohler,
H Wawra, T Boeck, I P Soshnikov, N N Ledenlsov, Z F Krasilnik and A Novikov 115
Observation of the nucleation kinetics of Si quantum dots on Si02 by EFTEM
G Nicotra, S Lombardo, R Puglisi, C Spinella, G Ammendola and C Gerardi 119
Observation of strained SiGe nanoislands embedded in a Si matrix using ambient cross-
sectional atomic force microscopy
AN Titkov, M S Dunaevskii, Z F Krasilnik, D N Lobanov, A V Novikov and R Laiho 123
Segregation in III-V semiconductor heterostructures studied by transmission electron
microscopy
M Schowalter, M Melzer, A Rosenauer, D Gerthsen, R Krebs, .1-P Reithmaier,
A Forchel, M Arzberger, M Bichler, G Abstreiter, M Grau, M C Amann, R Sellin and
D Bimberg 127
Use of quantitative EELS and cathodoluminescence for study of carrier confinement and
diffusion in self organized vertical quantum wells
K Leifer, S Mautino, H Weman, A Rudra, E Pelucchi, F Bobard, A Wyser and E Kapon 131
Analysis of strain and composition distributions in laterally strain-modulated InGaAs
nanostructures after overgrowth with GaAs or InGaP
U Zeimer, H Kirmse, .! Grenzer, S Grigorian, H Kissel, A Knauer, U Pietsch,
W Neumann, M Weyers and G Trankle 135
Existence of a critical threshold for the wavy growth onset in strain-balanced
InGaAs-based multi-quantum wells
L Nasi, L Lazzarini, C Ferrari, G Clarke. M Mazzer and K W.! Barnham 139
Characterization of InGaAs (N)/GaAsN multi-quantum wells using transmission
electron microscopy
M Gutierrez, M Herrera, I Ross, D Gonzalez, M Hopkinson and R Garcia 143
Quantitative investigation of Sb distribution in GaSb/GaAs heterostructures
M Schowalter, A Rosenauer, D Gerthsen, M Grau and M-C Amann 147
FEGTEM analysis of the effects of Ge segregation and germane flux on the Ge profile
across nm-scale SiGe layers, grown by both MBE and CVD
A Benedetti, D.! Norris, C.! D Hetherington, A G Cullis, D.! Robbins and D.! Wallis 151
Analysis ofterahertz-emitting SiGe quantum cascade structures by transmission
electron microscopy
S L Liew, D.! Norris, A G Cullis, R W Kelsall, P Harrison, Z Ikonic, D.! Paul,
SA Lynch, R Bates, D D Arnone and D.! Robbins !55
Transmission electron microscopy of AlN/TiN superlattice coatings fabricated by
pulsed laser deposition
V V Pankov, R H Prince, M Couillard and G A Botton 159