Micro and Nanoelectronics Devices, Circuits and Systems: Select Proceedings of MNDCS 2022

519 Pages·2022·20.113 MB·English

by  Trupti Ranjan Lenka, Durgamadhab Misra, Lan Fu

Lecture Notes in Electrical Engineering 904
Trupti Ranjan Lenka
Durgamadhab Misra
Lan Fu   Editors
Micro and
Nanoelectronics
Devices, Circuits
and Systems
Select Proceedings of MNDCS 2022
Lecture Notes in Electrical Engineering
Volume 904
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Jiming Chen, Zhejiang University, Hangzhou, Zhejiang, China
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Haibin Duan, Beijing University of Aeronautics and Astronautics, Beijing, China
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Yong Li, Hunan University, Changsha, Hunan, China
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Tan Cher Ming, College of Engineering, Nanyang Technological University, Singapore, Singapore
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· ·
Trupti Ranjan Lenka Durgamadhab Misra Lan Fu
Editors
Micro and Nanoelectronics
Devices, Circuits
and Systems
Select Proceedings of MNDCS 2022
Editors
Trupti Ranjan Lenka Durgamadhab Misra
Department of Electronics Department of Electrical and Computer
and Communication Engineering Engineering
National Institute of Technology Silchar New Jersey Institute of Technology
Silchar, India Newark, NJ, USA
Lan Fu
Department of Electronic Materials
Engineering
Australian National University
Canberra, ACT, Australia
ISSN 1876-1100 ISSN 1876-1119 (electronic)
Lecture Notes in Electrical Engineering
ISBN 978-981-19-2307-4 ISBN 978-981-19-2308-1 (eBook)
https://doi.org/10.1007/978-981-19-2308-1
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Preface
The book presents state-of-the-art research and developments in micro- and nano-
electronics devices, circuits and systems through select papers of 2nd Springer
International Conference on Micro/Nanoelectronics Devices, Circuits and Systems
(MNDCS-2022) held during January 29–31, 2022, virtually hosted by the Depart-
ment of Electronics and Communication Engineering, National Institute of Tech-
nology Silchar, Assam, India, in association with IEEE ED NIT Silchar Student
Branch Chapter and IEEE Kolkata Section Nanotechnology Council Chapter.
The high-quality contributions cover emerging trends in semiconductor materials
and device technology, integrated circuit (IC) technology, system-on-chip (SoC),
MEMS, and sensors for emerging applications. The contributed papers from India,
Bangladesh, Italy, and USA are included in this book.
The micro- and nanoelectronics devices include semiconductor device physics,
quantum electronics, heterostructure transport, compact device modeling, nanowire
LED, organic LED, MOSFET, OTFT, FinFET, TFET, HEMT, THz devices, photonics
devices, UWB semiconductor materials, 2D materials, nanotechnology: nanowires,
nanostructures, carbon nanotubes, graphene, flexible electronics, and high-efficiency
solar cells: Perovskite, CZTS, Kesterite, and novel photovoltaic concepts as outlined
in chapters on various emerging applications. From device tracks, the best paper
was awarded to “Growth of Vertically Aligned TiO Nanowire Photo-anode for
2
Developing Dye-sensitized Solar Cell.”
The micro- and nanoelectronics circuits part includes analog VLSI circuits,
digital VLSI circuits, mixed-mode VLSI circuits, bioelectronics circuits, circuit opti-
mization techniques, reconfigurable circuits, HDL-based FPGA design, and semi-
conductor memories: DRAM and SRAM. They are listed in various chapters for
emerging applications such as 5G technology, IOT, and biomedical electronics. From
circuit tracks, the best paper was awarded to “Design and Analysis of CMOS based
DRAM Cell Structures for High Performance Embedded System.”
The micro- and nanoelectronics systems in various chapters include System on
Chip (SoC), MEMS/NEMS, antennas, sensors, actuators, nanogenerators, energy
harvesters (piezoelectric and MEMS based), micromachining, microfluidics, Lab-
on-Chip, healthcare systems, embedded system design, biomedical systems, IoT, and
v
vi Preface
smart systems. From micro-and nanosystems tracks, the best paper was awarded to
“Modulated Scattering Technique (MST) Devices Hybridized with RF-MEMS Micro-
Switches for Next Generation IoT and 5G Smart Sensors.”
Silchar, India Trupti Ranjan Lenka
Newark, USA Durgamadhab Misra
Canberra, Australia Lan FU
Acknowledgements
The editors acknowledge the Department of Electronics and Communica-
tion Engineering, National Institute of Technology Silchar, Assam, India, for
providing the platform to organize 2nd Springer International Conference on
Micro/Nanoelectronics Devices, Circuits and Systems (MNDCS-2022) held virtually
during January 29–31, 2022.
The editors also acknowledge IEEE ED NIT Silchar Student Branch Chapter
and IEEE Kolkata Section Nanotechnology Council Chapter for their technical
collaboration and providing international platform to organize MNDCS-2022.
Acknowledgment also goes to all the authors and co-authors for their valuable
and quality contributions and presentations in the MNDCS-2022. All the poten-
tial reviewers of MNDCS-2022 are also well acknowledged for their voluntary
contributions for selecting good-quality manuscripts.
The keynote speakers (Prof. Subramanian S. Iyer, UCLA, USA; Prof. Lan FU, The
Australian National University, Australia; Dr. Jacopo Iannacci, Fondazione Bruno
Kessler, Italy; Prof. Patrick Fay, University of Notre Dame, USA; Prof. Nowshad
Amin, Institute of Sustainable Energy, Universiti Tenaga Nasional, Malaysia; Prof.
Sanket Goel, BITS Pilani, Hyderabad campus, India; Prof. Neerish Revaprasadu,
University of Zululand, South Africa; Prof. Luisa Petti, Free University of Bozen-
Bolzano, Italy; Prof. Sriram Krishnamoorthy, UCSB, USA; Prof. P. Susthitha Menon,
Universiti Kebangsaan Malaysia (UKM), Malaysia; Prof. Merlyne De Souza, The
University of Sheffield, UK) and the invited speakers (Dr. Ravi Teja Velpula, New
Jersey Institute of Technology, Newark, USA, and Prof. Kamrul Alam Khan, Jagan-
nath University, Bangladesh) of the MNDCS-2022 are highly acknowledged for
their keynote and invited talks, respectively, on micro-and nanoelectronics devices,
circuits, and systems.
All the chairs/co-chairs and organizing committee of the MNDCS-2022 are also
well acknowledged for the successful organization of the international conference.
Finally, the editors acknowledge Springer Nature for being the publishing partner
of the MNDCS-2022.
vii
Contents
Micro/Nanoelectronics Devices
Development of Ni-Doped Zinc Oxide Films via Sol-Gel Synthesis ...... 3
Soumya Sundar Parui, Vipul Kheraj, Nidhi Tiwari,
and Ram Narayan Chauhan
Modeling and Optimization Study of HIT-CBTSSe Tandem Solar
Cell .............................................................. 11
S. Vallisree, Trupti Ranjan Lenka, and J. Mrudula
High-k Dielectric Influence on Recessed-Gate Gallium Oxide
MOSFETs ........................................................ 21
Pharyanshu Kachhawa and Nidhi Chaturvedi
Design and Temperature Analysis of Si Ge -Based Extended
0.8 0.2
Gate Gate-All-Around TFET ....................................... 31
Navaneet Kumar Singh, Rajib Kar, Durbadal Mandal,
and Dibyendu Chowdhury
Optimization of Subthreshold Parameters of Graded-Channel
Gate-Stack Double-Gate (GC-GS-DG) MOSFET Using
PSO-CFIWA ...................................................... 41
Dibyendu Chowdhury, Bishnu Prasad De, Sumalya Ghosh,
Navaneet Kumar Singh, Rajib Kar, and Durbadal Mandal
A Comparative Study on Electrical Characteristics of Bulk, SOI,
and DG MOSFET ................................................. 51
Asutosh Patnaik, Narayan Sahoo, and Ajit Kumar Sahu
Optical Analysis of Far-Field Intensity on Organic Light-Emitting
Diode to Reduce Surface Plasmon Losses ............................ 61
B. M. Chaya, Koushik Guha, M. Venkatesha, A. Vaishnavi,
and K. Narayan
ix
x Contents
Analog Performance of Normally-On Si N /AlN/β-Ga O HEMT ...... 71
3 4 2 3
Meenakshi Chauhan, Abdul Naim Khan, Raghuvir Tomar,
and Kanjalochan Jena
Modulation of Electronic Properties in Double Quantum
Well-Based FET Structure ......................................... 79
Ajit Kumar Sahu, Narayan Sahoo, and Asutosh Patnaik
Comparative Analysis of Different Types of Gate Field Plate
AlGaN/GaN HEMT ............................................... 89
Pichingla Kharei, Achinta Baidya, and Niladri Pratap Maity
Advantages of Polarization Engineered Quantum Barriers
in III-Nitride Deep Ultraviolet Light-Emitting Diodes: An Electron
Blocking Layer Free Approach ..................................... 97
Ravi Teja Velpula, Barsha Jain, Samadrita Das, Trupti Ranjan Lenka,
and Hieu Pham Trung Nguyen
Investigation on Thermodynamic Properties of Novel
Ag SrSn(S/Se) Quaternary Chalcogenide for Solar Cell
2 4
Applications: A Density Functional Theory Study .................... 103
Ashutosh Srivastava, Trupti Ranjan Lenka, Jesuraj Anthoniappen,
and S. K. Tripathy
Impact of Carcinogenic Benzene on Electronic Properties of Mn-
and Fe-Doped MoSe Monolayer .................................... 111
2
Neha Mishra and Bramha P. Pandey
Growth of Vertical TiO -Nanowire Photoanode for Application
2
of Dye-Sensitized Solar Cell ........................................ 119
Biraj Shougaijam and Salam Surjit Singh
Multiband Photodetection Using TiO Thin Film Deposited on Si
2
Substrate Using E-beam Evaporation Technique ..................... 131
Salam Surjit Singh and Biraj Shougaijam
Evolution of Tunnel Field-Effect Transistor and Scope in Low
Power Applications: A Detailed Review .............................. 141
Ramesh Potharaju and Bijit Choudhuri
Design and Analysis of Non-uniform Body with Dual Material
FET-Based Digital Inverter ......................................... 159
Jagritee Talukdar and Kavicharan Mummaneni
Performance Analysis of Metal–Ferroelectric–Insulator–
Semiconductor Negative Capacitance FET for Various Channel
Materials ......................................................... 167
Malvika, Bijit Choudhuri, and Kavicharan Mummaneni