LMP8350 Ultra-Low Distortion Fully-Differential Precision ADC Driver With Select

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LMP8350
SNOSB80C–FEBRUARY2011–REVISEDOCTOBER2015
LMP8350 Ultra-Low Distortion Fully-Differential Precision ADC Driver With Selectable
Power Modes
1 Features 3 Description
• DifferentialInputandOutput The LMP8350 device is an ultra low distortion fully-
1 differential amplifier designed for driving high-
• Tri-LevelPowerSettingswithShutdown
performance precision analog-to-digital converters
• UltraLowHD2/HD3andTHD+NDistortion (ADC). As part of the PowerWise™ family, a unique
• AdjustableOutputCommon-ModeLevel modeenablepinallowstheusertochoosefromthree
different operating modes, trading power
• Fully-BalancedDifferentialArchitecture
consumptionfor dynamicperformance.
• Single-orDual-SupplyOperation
The high power mode is optimized for highest AC
• OperatingVoltageRange4.5Vto12V
performance. The low noise, wide bandwidth, and
• SupplyCurrent3mAto13mA fast slew rate make the LMP8350 ideal for driving 24-
• TotalTHD+Nat1KHz0.000097% bit ADCs with input sampling rates of 10 MHz or less.
The medium power mode is optimized for precision
• HD2/HD3Distortionat1KHz <–124dBc
DC performance, and can be used to drive 24-bit
• Bandwidth118mHz
ADCs with input sampling rates of 6 MHz or less. The
• Settlingto0.1%20ns low power mode is a trade-off between AC
• LowOffsetDrift0.4 µV/°C performance and quiescent current for power-
sensitive applications. The disable mode fully shuts
• OffsetVoltage80 µV
downtheamplifierfor furtherstandbypowersavings.
• VoltageNoise4.6nV/Hz
The fully differential architecture of this device allows
• OperatingTemperatureRange −40°Cto+85°C
for easy implementation of a single-ended to fully-
differential output conversion. Driving a 3-Vpp, 1-kHz
2 Applications
output sine wave with the amplifier powered by ±3.3-
• High-ResolutionDifferentialADCDrivers V rails in high power mode yields 0.000098%
THD+N.
• PortableInstrumentation
• PrecisionLineDrivers The LMP8350 is part of the LMP™ precision amplifier
family, and is offered in the 8-pin SOIC package, with
anoperatingtemperaturerangeof −40°Cto +85°C.
DeviceInformation(1)
PARTNUMBER PACKAGE BODYSIZE(NOM)
LMP8350 SOIC(8) 3.91mm×4.90mm
(1) For all available packages, see the orderable addendum at
theendofthedatasheet.
Typical Application
+VREF +V +V +V
R
F1
RG1 RO1 VREFP VA VIO CS
VINN - + + VINP SCLK
VOCM LMP8350 CS 24 Bit A/D SDI
RO2 SDO Micro-
VINP + - - VINN Controller
RG2 VREFN AGND DGND
R
F2
1
An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectualpropertymattersandotherimportantdisclaimers.PRODUCTIONDATA.
LMP8350
SNOSB80C–FEBRUARY2011–REVISEDOCTOBER2015 www.ti.com
Table of Contents
1 Features.................................................................. 1 7.4 DeviceFunctionalModes........................................20
2 Applications........................................................... 1 8 ApplicationandImplementation........................ 22
3 Description............................................................. 1 8.1 ApplicationInformation............................................22
4 RevisionHistory..................................................... 2 8.2 TypicalApplication .................................................25
5 PinConfigurationandFunctions......................... 3 9 PowerSupplyRecommendations...................... 27
9.1 PowerSupplyandV Bypassing.......................27
6 Specifications......................................................... 3 OCM
10 Layout................................................................... 28
6.1 AbsoluteMaximumRatings......................................3
6.2 ESDRatings..............................................................4 10.1 LayoutGuidelines.................................................28
6.3 RecommendedOperatingConditions.......................4 10.2 LayoutExample....................................................28
6.4 ThermalInformation..................................................4 10.3 PowerDissipation.................................................29
6.5 10-VElectricalCharacteristics..................................5 10.4 EvaluationBoard...................................................29
6.6 6.6-VElectricalCharacteristics.................................8 11 DeviceandDocumentationSupport................. 30
6.7 5-VElectricalCharacteristics..................................11 11.1 DocumentationSupport .......................................30
6.8 TypicalCharacteristics............................................14 11.2 CommunityResources..........................................30
7 DetailedDescription............................................ 19 11.3 Trademarks...........................................................30
7.1 Overview.................................................................19 11.4 ElectrostaticDischargeCaution............................30
7.2 FunctionalBlockDiagram.......................................19 11.5 Glossary................................................................30
7.3 FeatureDescription.................................................19 12 Mechanical,Packaging,andOrderable
Information........................................................... 30
4 Revision History
NOTE:Pagenumbersforpreviousrevisionsmaydifferfrompagenumbersinthecurrentversion.
ChangesfromRevisionB(March2013)toRevisionC Page
• AddedESDRatingstable,FeatureDescriptionsection,DeviceFunctionalModes,ApplicationandImplementation
section,PowerSupplyRecommendationssection,Layoutsection,DeviceandDocumentationSupportsection,and
Mechanical,Packaging,andOrderableInformationsection. ................................................................................................ 1
ChangesfromRevisionA(March2013)toRevisionB Page
• ChangedlayoutofNationalDataSheettoTIformat........................................................................................................... 29
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5 Pin Configuration and Functions
DPackage
8-PinSOIC
TopView
1 8
-IN +IN
- +
2 7
VOCM EN
3 6
V+ V-
4 5
+OUT -OUT
PinFunctions
PIN
I/O DESCRIPTION
NO. NAME
1 –IN I InvertingInput
Outputcommon-modevoltagesetinput.Setsoutputcommonmodevoltageequaltothe
2 V I
OCM appliedV pinvoltage.
OCM
3 V+ I Positivepowersupplyvoltage
4 +OUT O Noninvertingoutput
5 –OUT O Invertingoutput
6 V– I Negativepowersupplyvoltage
7 EN I Enableandpowerselectinput.Appliedvoltagesetspowerlevelorshutdownmode.
8 +IN I NoninvertingInput
6 Specifications
6.1 Absolute Maximum Ratings(1)(2)(3)
MIN MAX UNIT
Outputshortcircuitduration See (4)
V+relativetoV– –0.3 12.9 V
IN+,IN–,OUT,ENandV pins (V+)+0.3 (V–)–0.3 V
OCM
Inputcurrent 1 mA
Junctiontemperature(5) 150 °C
Storagetemperature,T −65 150 °C
stg
(1) StressesbeyondthoselistedunderAbsoluteMaximumRatingsmaycausepermanentdamagetothedevice.Thesearestressratings
only,whichdonotimplyfunctionaloperationofthedeviceattheseoranyotherconditionsbeyondthoseindicatedunderRecommended
OperatingConditions.Exposuretoabsolute-maximum-ratedconditionsforextendedperiodsmayaffectdevicereliability.
(2) IfMilitary/Aerospacespecifieddevicesarerequired,pleasecontacttheTISalesOffice/Distributorsforavailabilityandspecifications.
(3) Forsolderingspecifications:SNOA549
(4) Theshortcircuittestisamomentarytestwhichappliestobothsingle-supplyandsplit-supplyoperation.Continuousshortcircuit
operationatelevatedambienttemperaturecanexceedthemaximumallowablejunctiontemperatureof150°C.Positivenumber(+)is
sourcing,negativenumber(–)issinking.
(5) ThemaximumpowerdissipationisafunctionofT ,θ .Themaximumallowablepowerdissipationatanyambienttemperatureis
J(MAX) JA
P =(T –T )/θ .AllnumbersapplyforpackagessoldereddirectlyontoaPCBoard.
D J(MAX) A JA
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6.2 ESD Ratings
VALUE UNIT
Humanbodymodel(HBM),perANSI/ESDA/JEDECJS-001(1)(2) ±2500
V Electrostatic Charged-devicemodel(CDM),perJEDECspecificationJESD22-C101(3) ±1250 V
(ESD) discharge
MachineModel ±200
(1) JEDECdocumentJEP155statesthat500-VHBMallowssafemanufacturingwithastandardESDcontrolprocess.Manufacturingwith
lessthan500-VHBMispossiblewiththenecessaryprecautions.
(2) HumanBodyModel,applicablestd.MIL-STD-883,Method3015.7.MachineModel,applicablestd.JESD22-A115-A(ESDMMstd.of
JEDEC).Field-InducedCharge-DeviceModel,applicablestd.JESD22-C101-C(ESDFICDMstd.ofJEDEC).
(3) JEDECdocumentJEP157statesthat250-VCDMallowssafemanufacturingwithastandardESDcontrolprocess.
6.3 Recommended Operating Conditions
See (1)
MIN MAX UNIT
Temperaturerange(T ) –40 85 °C
A
Supplyvoltage(V =V+–V–) 4.5 12 V
S
(1) AbsoluteMaximumRatingsindicatelimitsbeyondwhichdamagetothedevicemayoccur.OperatingRatingsindicateconditionsfor
whichthedeviceisintendedtobefunctional,butspecificperformanceisnotensured.Forensuredspecificationsandthetest
conditions,seetheElectricalCharacteristicsTables.
6.4 Thermal Information
LMP8350
THERMALMETRIC(1) D(SOIC) UNIT
8PINS
R Junction-to-ambientthermalresistance (2) 150 °C/W
θJA
(1) Formoreinformationabouttraditionalandnewthermalmetrics,seetheSemiconductorandICPackageThermalMetricsapplication
report,SPRA953.
(2) ThemaximumpowerdissipationisafunctionofT ,θ .Themaximumallowablepowerdissipationatanyambienttemperatureis
J(MAX) JA
P =(T –T )/θ .AllnumbersapplyforpackagessoldereddirectlyontoaPCBoard.
D J(MAX) A JA
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6.5 10-V Electrical Characteristics
Unlessotherwisespecified,alllimitsareensuredforT =25°C,Avcl=+1,R =R =1kΩ,Fullydifferentialinput,V =+10
A F G S
V,R =2kΩ//20pFdifferentially,InputCMRandV =mid-supplyandHPmodeunlessotherwisenoted.(1)
L OCM
PARAMETER TESTCONDITIONS(2) MIN(3) TYP(4) MAX(3) UNIT
10-VDCCHARACTERISTICS
TA=25°C ±0.6 ±4
Highpower
Atthetemperatureextremes ±4.05
Inputoffsetvoltage TA=25°C ±0.08 ±2
VOS (RTI) Midpower Atthetemperatureextremes ±2.03 mV
TA=25°C ±0.1 ±2.5
Lowpower
Atthetemperatureextremes ±2.52
Highpower ±0.8
TCVOS Inputoffsetvoltagevs.temperature(5) Midpower ±0.5 μV/°C
Lowpower ±0.4
TA=25°C 2
Highpower
Atthetemperatureextremes 2.1
TA=25°C 2.7
IB Inputbiascurrent Midpower μA
Atthetemperatureextremes 3.2
TA=25°C 3.5
Lowpower
Atthetemperatureextremes 3.7
Highpower 65 90
AVOL Open-loopgain Midpower 72 130 dB
Lowpower 74 114
HPatCMRR≥73dB 1.2 8.8
CMVR Common-modevoltagerange(6) MPatCMRR≥83dB 1.2 8.8 V
LPatCMRR≥77dB 1.2 8.8
DC,VOCM=0,VID=0,ΔVcm=±0.2V,Highpower 75 90
CMRR Common-moderejectionratio Mediumpower 84 130 dB
Lowpower 79 114
ZIND Differentialinputresistance VCM=mid-supply 0.48 MΩ
CIND Differentialinputcapacitance VCM=mid-supply 1 pF
LowSwing 0.86 0.75 9.14
Highpower
HighSwing 0.86 9.25 9.14
Outputswing LowSwing 0.85 0.74 9.15
VO (single-ended) Midpower HighSwing 0.85 9.26 9.15 V
LowSwing 0.86 0.81 9.14
Lowpower
HighSwing 0.86 9.19 9.14
(1) ElectricalTablevaluesapplyonlyforfactorytestingconditionsatthetemperatureindicated.Factorytestingconditionsresultinvery
limitedself-heatingofthedevicesuchthatT =T .Noensuredspecificationofparametricperformanceisindicatedintheelectrical
J A
tablesunderconditionsofinternalself-heatingwhereT >T
J A
(2) Forannotationbrevity,“HP”=HighPower,“MP”=MediumPower,“LP”=LowPower,“DIS”=Disabledorshutdown,“SE”=SingleEnded
Mode,“DM”=DifferentialMode.SeeTable1inApplicationssectionforpowersettingdetails.ItisalsoassumedR =R =R
G G1 G2
(3) Limitsare100%productiontestedat25°C.Limitsovertheoperatingtemperaturerangeareensuredthroughcorrelationsusingthe
StatisticalQualityControl(SQC)method.
(4) Typicalvaluesrepresentthemostlikelyparametricnormasdeterminedatthetimeofcharacterization.Actualtypicalvaluesmayvary
overtimeandwillalsodependontheapplicationandconfiguration.Thetypicalvaluesarenottestedandarenotensuredonshipped
productionmaterial.
(5) DriftDeterminedbydividingthechangeinparameterattemperatureextremesbythetotaltemperaturechange.Valueistheworstcase
ofTa to25°Cand25°CtoTa .
MIN MAX
(6) Atamplifierinputs.
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10-V Electrical Characteristics (continued)
Unlessotherwisespecified,alllimitsareensuredforT =25°C,Avcl=+1,R =R =1kΩ,Fullydifferentialinput,V =+10
A F G S
V,R =2kΩ//20pFdifferentially,InputCMRandV =mid-supplyandHPmodeunlessotherwisenoted.(1)
L OCM
PARAMETER TESTCONDITIONS(2) MIN(3) TYP(4) MAX(3) UNIT
Outputshortedtomid- LowSwing –36 -65
supply(7)
Highpower HighSwing 75 108
LowSwing -26 -48
ISHORT Short-circuitcurrent Mediumpower mA
HighSwing 60 85
LowSwing -6 -20
Lowpower
HighSwing 15 36
Highpower 107
Powersupplyrejectionratio
PSRR Midpower 118 dB
VS±10%
Lowpower 124
VEN=8.75(8) TA=25°C 15 18
Atthetemperatureextremes 20
IS Supplycurrent VEN=6.25(8) TA=25°C 8 10 mA
Atthetemperatureextremes 11
VEN=3.75(8) TA=25°C 3 4
Atthetemperatureextremes 5
Disablevoltagethreshold(8) <1.65 V
TA=25°C 0.75 0.9
PD Power-downmode Shutdowncurrent mA
Atthetemperatureextremes 0.95
Enablepincurrent 100 μA
Highpower 15
ten Enabletime Midpower 20 ns
Lowpower 40
10-VACCHARACTERISTICS
Highpower 118
Smallsignalbandwidth
SSBW Midpower 87 MHz
200mVp-pdifferential
Lowpower 31
Highpower 507
Slewrate
SR 2Vp-pdifferential(9) Midpower 393 V/μs
Lowpower 178
Highpower 3
Risetime
trise 2Vp-pdifferential Midpower 3.9 ns
Lowpower 9.7
Highpower 2.8
Falltime
tfall 2Vp-pdifferential Midpower 3.8 ns
Lowpower 9.6
2-Vstep,CL=20pF 20
Highpower
0.1%settlingtime
ts 2Vp-p Midpower 25 ns
Lowpower 38
Highpower 4.6
Inputreferredvoltagenoise
en at10KHz Midpower 4.8 nV/√Hz
Lowpower 8
(7) Theshortcircuittestisamomentarytestwhichappliestobothsingle-supplyandsplit-supplyoperation.Continuousshortcircuit
operationatelevatedambienttemperaturecanexceedthemaximumallowablejunctiontemperatureof150°C.Positivenumber(+)is
sourcing,negativenumber(–)issinking.
(8) EnablevoltageisreferredtoV–(negativesupplyvoltage).
(9) SlewRateistheaverageoftherisingandfallingedges.
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10-V Electrical Characteristics (continued)
Unlessotherwisespecified,alllimitsareensuredforT =25°C,Avcl=+1,R =R =1kΩ,Fullydifferentialinput,V =+10
A F G S
V,R =2kΩ//20pFdifferentially,InputCMRandV =mid-supplyandHPmodeunlessotherwisenoted.(1)
L OCM
PARAMETER TESTCONDITIONS(2) MIN(3) TYP(4) MAX(3) UNIT
f=10kHz
1.7
Highpower
Inputreferredcurrentnoise
In at10KHz Midpower 1.1 pA/√Hz
Lowpower 0.6
Highpower 0.000097%
Totalharmonicdistortion+noise
THD+N Midpower 0.000109%
3Vp-pat1KHz
Lowpower 0.000185%
Highpower –124.7 –116
2ndharmonicdistortion
Midpower –122.8 dBc
3Vp-p,1KHz
Lowpower –117.2
HD2
Highpower –118.9
2ndharmonicdistortion
Midpower –117.6 dBc
6Vp-p,1KHz
Lowpower –114.7
Highpower –139.9 –126
3rdharmonicdistortion
Midpower –141.9 dBc
3Vp-p,1KHz
Lowpower –133.3
HD3
Highpower –129.5
3rdharmonicdistortion
Midpower –132.4 dBc
6Vp-p,1KHz
Lowpower –129.4
10-VVOCMINPUTCHARACTERISTICS
Highpower 4.8
VOCMsmallsignalbandwidth Midpower 2.4 MHz
200mVp-p
Lowpower 0.64
VOCMgain 1 V/V
Highpower ±1.62
VOCMoffsetvoltage Midpower ±0.23 mV
Lowpower ±0.43
LowSwing 1.8
VOCMvoltagerange Allpowerlevels V
HighSwing 8.2
LowSwing 30
VOCMinputresistance Allpowerlevels KΩ
HighSwing mid-supply
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6.6 6.6-V Electrical Characteristics
Unlessotherwisespecified,alllimitsareensuredforT =25°C,Avcl=+1,R =R =1kΩ,Fullydifferentialinput,V =+6.6
A F G S
V,R =2kΩ//20pFdifferentially,InputCMRandV =mid-supplyandHPmodeunlessotherwisenoted.(1)
L OCM
PARAMETER TESTCONDITIONS(2) MIN(3) TYP(4) MAX(3) UNIT
6.6-VDCCHARACTERISTICS
T =25°C ±0.3 ±3.5
A
Highpower
Atthetemperatureextremes ±3.54
Inputoffsetvoltage TA=25°C ±0.1 ±2.8
V Midpower mV
OS (RTI) Atthetemperatureextremes ±2.83
T =25°C ±0.1 ±2.5
A
Lowpower
Atthetemperatureextremes ±2.52
Highpower ±0.7
TCV Inputoffsetvoltage
O vs.temperature(5) Midpower ±0.5 μV/°C
S
Lowpower ±0.4
T =25°C 1.4
A
Highpower
Atthetemperatureextremes 2.4
T =25°C 2.5
A
I Inputbiascurrent Midpower μA
B
Atthetemperatureextremes 3.0
T =25°C 3.5
A
Lowpower
Atthetemperatureextremes 3.7
Highpower 65 70
A Open-loopgain Midpower 73 76 dB
VOL
Lowpower 72 75
HPatCMRR≥68dB 1.2 5.4
CMVR Common-modevoltagerange(6) MPatCMRR≥63dB 1.2 5.4 V
LPatCMRR≥79dB 1.2 5.4
DC,V =0,VID=0,
OCM
ΔVcm=±0.2V 70 85
Highpower
CMRR Common-moderejectionratio dB
Midpower 86 117
Lowpower 81 113
Z Differentialinputresistance V =mid-supply 0.48 MΩ
IND CM
C Differentialinputcapacitance V =mid-supply 1 pF
IND CM
LowSwing 0.84 0.77 5.76
Highpower
HighSwing 0.84 5.83 5.76
Outputswing LowSwing 0.82 0.75 5.78
V Midpower V
O (single-ended) HighSwing 0.82 5.83 5.78
LowSwing 0.83 0.77 5.77
Lowpower
HighSwing 0.83 5.83 5.77
(1) ElectricalTablevaluesapplyonlyforfactorytestingconditionsatthetemperatureindicated.Factorytestingconditionsresultinvery
limitedself-heatingofthedevicesuchthatT =T .Noensuredspecificationofparametricperformanceisindicatedintheelectrical
J A
tablesunderconditionsofinternalself-heatingwhereT >T
J A
(2) Forannotationbrevity,“HP”=HighPower,“MP”=MediumPower,“LP”=LowPower,“DIS”=Disabledorshutdown,“SE”=SingleEnded
Mode,“DM”=DifferentialMode.SeeTable1inApplicationssectionforpowersettingdetails.ItisalsoassumedR =R =R
G G1 G2
(3) Limitsare100%productiontestedat25°C.Limitsovertheoperatingtemperaturerangeareensuredthroughcorrelationsusingthe
StatisticalQualityControl(SQC)method.
(4) Typicalvaluesrepresentthemostlikelyparametricnormasdeterminedatthetimeofcharacterization.Actualtypicalvaluesmayvary
overtimeandwillalsodependontheapplicationandconfiguration.Thetypicalvaluesarenottestedandarenotensuredonshipped
productionmaterial.
(5) DriftDeterminedbydividingthechangeinparameterattemperatureextremesbythetotaltemperaturechange.Valueistheworstcase
ofTa to25°Cand25°CtoTa .
MIN MAX
(6) Atamplifierinputs.
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6.6-V Electrical Characteristics (continued)
Unlessotherwisespecified,alllimitsareensuredforT =25°C,Avcl=+1,R =R =1kΩ,Fullydifferentialinput,V =+6.6
A F G S
V,R =2kΩ//20pFdifferentially,InputCMRandV =mid-supplyandHPmodeunlessotherwisenoted.(1)
L OCM
PARAMETER TESTCONDITIONS(2) MIN(3) TYP(4) MAX(3) UNIT
Outputshortedto LowSwing –30 –49
mid-supply(7)
Highpower HighSwing 54 83
LowSwing –19 –35
ISHORT Short-circuitcurrent Midpower mA
HighSwing 40 64
LowSwing –6 –15
Lowpower
HighSwing 15 27
Highpower 111
Powersupplyrejectionratio
PSRR Midpower 117 dB
V ±10%
S
Lowpower 127
T =25°C 14 16
V =5.775(8) A
EN
Atthetemperatureextremes 18
T =25°C 7 9
I Supplycurrent V =4.125(8) A mA
S EN
Atthetemperatureextremes 10
T =25°C 2 3
V =2.475(8) A
EN
Atthetemperatureextremes 4
Disablevoltagethreshold(8) <1.225 V
T =25°C 0.55 0.65
A
PD Power-downmode Shutdowncurrent mA
Atthetemperatureextremes 0.7
Enablepincurrent 40 μA
Highpower 18
t Enabletime Midpower 22 ns
en
Lowpower 43
6.6-VACCHARACTERISTICS
Highpower 116
Smallsignalbandwidth
SSBW Midpower 85 MHz
200mVp-pdifferential
Lowpower 29
Highpower 488
Slewrate
SR 2Vp-pdifferential(9) Midpower 376 V/μs
Lowpower 166
Highpower 3.1
Risetime
t Midpower 4.2 ns
rise 2Vp-pdifferential
Lowpower 10.4
Highpower 3.0
Falltime
t Midpower 4.0 ns
fall 2Vp-pdifferential
Lowpower 10.3
2-Vstep,C =20pF
L 19
Highpower
0.1%settlingtime
t ns
s 2Vp-p Midpower 25
Lowpower 43
(7) Theshortcircuittestisamomentarytestwhichappliestobothsingle-supplyandsplit-supplyoperation.Continuousshortcircuit
operationatelevatedambienttemperaturecanexceedthemaximumallowablejunctiontemperatureof150°C.Positivenumber(+)is
sourcing,negativenumber(–)issinking.
(8) EnablevoltageisreferredtoV-(negativesupplyvoltage).
(9) SlewRateistheaverageoftherisingandfallingedges.
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6.6-V Electrical Characteristics (continued)
Unlessotherwisespecified,alllimitsareensuredforT =25°C,Avcl=+1,R =R =1kΩ,Fullydifferentialinput,V =+6.6
A F G S
V,R =2kΩ//20pFdifferentially,InputCMRandV =mid-supplyandHPmodeunlessotherwisenoted.(1)
L OCM
PARAMETER TESTCONDITIONS(2) MIN(3) TYP(4) MAX(3) UNIT
Highpower 4.5
Inputreferredvoltagenoise
e Midpower 4.8 nV/√Hz
n at10KHz
Lowpower 8
Highpower 1.7
Inputreferredcurrentnoise
I Midpower 1.2 pA/√Hz
n at10KHz
Lowpower 0.6
0.000098
Highpower
%
Totalharmonicdistortion+
THD+
noise Midpower 0.00011%
N
3Vp-pat1KHz
0.000089
Lowpower
%
Highpower –124.7
2ndharmonicdistortion
Midpower –122.8 dBc
3Vp-p,1KHz
Lowpower –117.2
HD2
Highpower –118.9
2ndharmonicdistortion
Midpower –117.6 dBc
6Vp-p,1KHz
Lowpower –114.7
Highpower –139.9
3rdharmonicdistortion
Midpower -141.9 dBc
3Vp-p,1KHz
Lowpower –133.3
HD3
Highpower –121.4
3rdharmonicdistortion
Midpower –125.3 dBc
6Vp-p,1KHz
Lowpower –124.5
6.6-VV INPUTCHARACTERISTICS
OCM
Highpower 4.5
V smallsignalbandwidth
OCM Midpower 2.2 MHz
200mVp-p
Lowpower 0.6
V gain 1 V/V
OCM
Highpower ±0.97
V offsetvoltage Midpower ±0.43 mV
OCM
Lowpower ±0.89
LowSwing 1.2
V voltagerange Allpowerlevels V
OCM
HighSwing 5.4
LowSwing 30
V inputresistance Allpowerlevels KΩ
OCM
HighSwing mid-supply
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