LMP2011 Single/LMP2012 Dual High Precision, Rail-to-Rail Output Operational Ampl datasheet

33 Pages·2015·1.69 MB·English

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LMP2011 Single/LMP2012 Dual High Precision, Rail-to-Rail Output Operational Amplifier
1 Features 3 Description
(For V =5V,TypicalUnlessOtherwiseNoted) The LMP201x series are the first members of TI's
1 S
new LMP™ precision amplifier family. The LMP201x
• LowEnsuredV OverTemperature60µV
OS series offers unprecedented accuracy and stability in
• LowNoisewithNo1/f35nV/√Hz space-saving miniature packaging, offered at an
• HighCMRR 130dB affordable price. This device utilizes patented auto-
zero techniques to measure and continually correct
• HighPSRR 120dB
the input offset error voltage. The result is an
• HighAVOL 130dB amplifier which is ultra-stable over time and
• WideGain-BandwidthProduct3MHz temperature. It has excellent CMRR and PSRR
ratings, and does not exhibit the familiar 1/f voltage
• HighSlewRate4V/µs
and current noise increase that plagues traditional
• LowSupplyCurrent930µA
amplifiers. The combination of the LMP201x
• Rail-to-RailOutput30mV characteristics makes it a good choice for transducer
• NoExternalCapacitorsRequired amplifiers, high gain configurations, ADC buffer
amplifiers, DAC I-V conversion, and any other 2.7-V
2 Applications to 5-V application requiring precision and long term
stability.
• PrecisionInstrumentationAmplifiers
Other useful benefits of the LMP201x are rail-to-rail
• ThermocoupleAmplifiers
output, a low supply current of 930 µA, and wide
• StrainGaugeBridgeAmplifier gain-bandwidth product of 3 MHz. These versatile
features found in the LMP201x provide high
performanceandeaseofuse.
DeviceInformation(1)
PARTNUMBER PACKAGE BODYSIZE(NOM)
SOIC(8) 4.90mm×3.91mm
LMP2011
SOT-23(5) 2.90mm×1.60mm
SOIC(8) 4.90mm×3.91mm
LMP2012
VSSOP(8) 3.00mm×3.00mm
(1) For all available packages, see the orderable addendum at
theendofthedatasheet.
BridgeAmplifier OffsetVoltagevsCommonModeVoltage
5V
+
VOUT
-
+
-
R1 R2 R2 R1
10k, 0.1% 2k, 1% 2k, 1% 10k, 0.1%
R3
20:
1
An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectualpropertymattersandotherimportantdisclaimers.PRODUCTIONDATA.
LMP2011,LMP2012
SNOSA71L–OCTOBER2004–REVISEDSEPTEMBER2015 www.ti.com
Table of Contents
1 Features.................................................................. 1 7.3 FeatureDescription.................................................14
2 Applications........................................................... 1 7.4 DeviceFunctionalModes........................................15
3 Description............................................................. 1 8 ApplicationandImplementation........................ 17
4 RevisionHistory..................................................... 2 8.1 ApplicationInformation............................................17
8.2 TypicalApplications................................................17
5 PinConfigurationandFunctions......................... 3
9 PowerSupplyRecommendations...................... 20
6 Specifications......................................................... 4
10 Layout................................................................... 20
6.1 AbsoluteMaximumRatings......................................4
6.2 ESDRatings..............................................................4 10.1 LayoutGuidelines.................................................20
6.3 RecommendedOperatingConditions.......................4 10.2 LayoutExample....................................................21
6.4 ThermalInformation:LMP2011................................4 11 DeviceandDocumentationSupport................. 22
6.5 ThermalInformation:LMP2012................................5 11.1 DeviceSupport ....................................................22
6.6 2.7-VDCElectricalCharacteristics...........................5 11.2 DocumentationSupport........................................22
6.7 2.7-VACElectricalCharacteristics...........................6 11.3 RelatedLinks........................................................22
6.8 5-VDCElectricalCharacteristics..............................7 11.4 CommunityResources..........................................22
6.9 5-VACElectricalCharacteristics..............................8 11.5 Trademarks...........................................................22
6.10 TypicalCharacteristics............................................9 11.6 ElectrostaticDischargeCaution............................22
7 DetailedDescription............................................ 14 11.7 Glossary................................................................23
7.1 Overview.................................................................14 12 Mechanical,Packaging,andOrderable
Information........................................................... 23
7.2 FunctionalBlockDiagram.......................................14
4 Revision History
NOTE:Pagenumbersforpreviousrevisionsmaydifferfrompagenumbersinthecurrentversion.
ChangesfromRevisionK(March2013)toRevisionL Page
• AddedPinConfigurationandFunctionssection,StorageConditionstable,ESDRatingstable,FeatureDescription
section,DeviceFunctionalModes,ApplicationandImplementationsection,PowerSupplyRecommendations
section,Layoutsection,DeviceandDocumentationSupportsection,andMechanical,Packaging,andOrderable
Informationsection ................................................................................................................................................................ 1
ChangesfromRevisionJ(March2013)toRevisionK Page
• ChangedlayoutofNationalDataSheettoTIformat........................................................................................................... 19
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5 Pin Configuration and Functions
DBVPackage
5-PinSOT-23Single DPackage
TopView 8-PinSingleSOIC
TopView
1 8
N/C N/C
VIN- 2 - 7 V+
VIN+ 3 + 6 VOUT
V- 4 5 N/C
PinFunctions: LMP2011
PIN
NO. I/O DESCRIPTION
NAME
DBV D
-IN 4 3 O Invertinginput
+IN 3 2 I Non-Invertinginput
N/C - 1 - NoInternalConnection
N/C - 5 - NoInternalConnection
N/C - 8 - NoInternalConnection
OUT 1 6 I Output
V- 2 4 P Negative(lowest)powersupply
V+ 5 7 P Positive(highest)powersupply
DorDGKPackage
8-PinDualSOICandVSSOP
TopView
PinFunctions: LMP2012
PIN
NO. I/O DESCRIPTION
NAME
D,DGK
–INA 2 I Invertinginput,channelA
+INA 3 I Non-Invertinginput,channelA
–INB 6 I Invertinginput,channelB
+INB 5 I Non-Invertinginput,channelB
OUTA 1 O Output,channelA
OUTB 7 O Output,channelB
V– 4 P Negative(lowest)powersupply
V+ 8 P Positive(highest)powersupply
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6 Specifications
6.1 Absolute Maximum Ratings
See (1)(2)
MIN MAX UNIT
SupplyVoltage 5.8 V
Common-ModeInputVoltage (V-)-0.3 (V+)+0.3 V
LeadTemperature(soldering10sec.) 300 °C
DifferentialInputVoltage ±SupplyVoltage
CurrentatInputPin 30 30 mA
CurrentatOutputPin 30 30 mA
CurrentatPowerSupplyPin 50 30 mA
StorageTemperature −65 150 °C
(1) AbsoluteMaximumRatingsindicatelimitsbeyondwhichdamagemayoccur.OperatingRatingsindicateconditionsforwhichthedevice
isintendedtobefunctional,butspecificperformanceisnotensured.Forensuredspecificationsandtestconditions,seetheElectrical
Characteristics.
(2) IfMilitary/Aerospacespecifieddevicesarerequired,pleasecontacttheTexasInstrumentsSalesOffice/Distributorsforavailabilityand
specifications.
6.2 ESD Ratings
VALUE UNIT
Humanbodymodel(HBM),perANSI/ESDA/JEDECJS-001(1) ±2000
V Electrostaticdischarge V
(ESD)
Machinemodel ±200
(1) JEDECdocumentJEP155statesthat500-VHBMallowssafemanufacturingwithastandardESDcontrolprocess.
6.3 Recommended Operating Conditions
MIN MAX UNIT
SupplyVoltage 2.7 5.25 V
OperatingTemperatureRange −40 125 °C
6.4 Thermal Information: LMP2011
LMP2011
THERMALMETRIC(1) D(SOIC) DBV(SOT-23) UNIT
8PINS 5PINS
R Junction-to-ambientthermalresistance 119 164 °C/W
θJA
R Junction-to-case(top)thermalresistance 66 116 °C/W
θJC(top)
R Junction-to-boardthermalresistance 60 28 °C/W
θJB
ψ Junction-to-topcharacterizationparameter 17 13 °C/W
JT
ψ Junction-to-boardcharacterizationparameter 59 27 °C/W
JB
(1) Formoreinformationabouttraditionalandnewthermalmetrics,seetheSemiconductorandICPackageThermalMetricsapplication
report,SPRA953.
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6.5 Thermal Information: LMP2012
LMP2012
THERMALMETRIC(1) D(SOIC) DGK(VSSOP) UNIT
8PINS 8PINS
R Junction-to-ambientthermalresistance 110 157 °C/W
θJA
R Junction-to-case(top)thermalresistance 50 51 °C/W
θJC(top)
R Junction-to-boardthermalresistance 52 77 °C/W
θJB
ψ Junction-to-topcharacterizationparameter 8 5 °C/W
JT
ψ Junction-to-boardcharacterizationparameter 51 75 °C/W
JB
(1) Formoreinformationabouttraditionalandnewthermalmetrics,seetheSemiconductorandICPackageThermalMetricsapplication
report,SPRA953.
6.6 2.7-V DC Electrical Characteristics
Unlessotherwisespecified,alllimitsensuredforT =25°C,V+=2.7V,V−=0V,V =1.35V,V =1.35V,andR >1MΩ.
J CM O L
PARAMETER TESTCONDITIONS MIN(1) TYP(2) MAX(1) UNIT
InputOffsetVoltage TJ=25°C 0.8 25
(LMP2011only) Thetemperatureextremes 60
μV
InputOffsetVoltage TJ=25°C 0.8 36
V
OS (LMP2012only) Thetemperatureextremes 60
T =25°C 0.5 10
J
OffsetCalibrationTime ms
Thetemperatureextremes 12
InputOffsetVoltage 0.015 μV/°C
TCV
OS
Long-TermOffsetDrift 0.006 μV/month
LifetimeV Drift 2.5 μV
OS
I InputCurrent -3 pA
IN
I InputOffsetCurrent 6 pA
OS
InputDifferential 9
R MΩ
IND Resistance
T =25°C 95 130
J
CommonModeRejection −0.3≤V ≤0.9V,
CMRR Ratio 0≤V C≤M0.9V Thetemperature 90 dB
CM
extremes
PowerSupplyRejection TJ=25°C 95 120
PSRR dB
Ratio Thetemperatureextremes 90
T =25°C 95 130
J
RL=10kΩ Thetemperature 90
extremes
A OpenLoopVoltageGain dB
VOL
T =25°C 90 124
J
RL=2kΩ Thetemperature 85
extremes
(1) Limitsare100%productiontestedat25°C.Limitsovertheoperatingtemperaturerangeareensuredthroughcorrelationsusing
statisticalqualitycontrol(SQC)method.
(2) Typicalvaluesrepresentthemostlikelyparametricnorm.
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2.7-V DC Electrical Characteristics (continued)
Unlessotherwisespecified,alllimitsensuredforT =25°C,V+=2.7V,V−=0V,V =1.35V,V =1.35V,andR >1MΩ.
J CM O L
PARAMETER TESTCONDITIONS MIN(1) TYP(2) MAX(1) UNIT
T =25°C 2.665 2.68
J
Thetemperature 2.655
R =10kΩto1.35V, extremes
L V
VIN(diff)=±0.5V TJ=25°C 0.033 0.060
Thetemperature 0.075
OutputSwing extremes
(LMP2011only) T =25°C 2.630 2.65
J
Thetemperature 2.615
R =2kΩto1.35V, extremes
L V
VIN(diff)=±0.5V TJ=25°C 0.061 0.085
Thetemperature 0.105
extremes
V
O
T =25°C 2.64 2.68
J
Thetemperature 2.63
R =10kΩto1.35V, extremes
L V
VIN(diff)=±0.5V TJ=25°C 0.033 0.060
Thetemperature 0.075
OutputSwing extremes
(LMP2012only) T =25°C 2.615 2.65
J
Thetemperature 2.6
R =2kΩto1.35V, extremes
L V
VIN(diff)=±0.5V TJ=25°C 0.061 0.085
Thetemperature 0.105
extremes
T =25°C 5 12
J
Sourcing,V =0V,
O
V (diff)=±0.5V Thetemperature 3
IN
extremes
I OutputCurrent mA
O
T =25°C 5 18
J
V (diff)=±0.5V,
IN
Sinking,V =5V Thetemperature 3
O
extremes
SupplyCurrentper TJ=25°C 0.919 1.20
I mA
S Channel Thetemperatureextremes 1.50
6.7 2.7-V AC Electrical Characteristics
T =25°C,V+=2.7V,V−=0V,V =1.35V,V =1.35V,andR >1MΩ.
J CM O L
PARAMETER TESTCONDITIONS MIN(1) TYP(2) MAX(1) UNIT
GBW Gain-BandwidthProduct 3 MHz
SR SlewRate 4 V/μs
θ PhaseMargin 60 Deg
m
G GainMargin −14 dB
m
e Input-ReferredVoltageNoise 35 nV/√Hz
n
e p-p Input-ReferredVoltageNoise R =100Ω,DCto10Hz 850 nV
n S pp
t InputOverloadRecoveryTime 50 ms
rec
(1) Limitsare100%productiontestedat25°C.Limitsovertheoperatingtemperaturerangeareensuredthroughcorrelationsusing
statisticalqualitycontrol(SQC)method.
(2) Typicalvaluesrepresentthemostlikelyparametricnorm.
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6.8 5-V DC Electrical Characteristics
Unlessotherwisespecified,alllimitsensuredforT =25°C,V+=5V,V−=0V,V =2.5V,V =2.5V,andR >1MΩ.
J CM O L
PARAMETER TESTCONDITIONS MIN(1) TYP(2) MAX(1) UNIT
InputOffsetVoltage TJ=25°C 0.12 25
(LMP2011only) Thetemperatureextremes 60
μV
InputOffsetVoltage TJ=25°C 0.12 36
V
OS (LMP2012only) Thetemperatureextremes 60
T =25°C 0.5 10
J
OffsetCalibrationTime ms
Thetemperatureextremes 12
InputOffsetVoltage 0.015 μV/°C
TCV
OS
Long-TermOffsetDrift 0.006 μV/month
LifetimeV Drift 2.5 μV
OS
I InputCurrent -3 pA
IN
I InputOffsetCurrent 6 pA
OS
InputDifferential 9
R MΩ
IND Resistance
CMRR CommonMode −0.3≤VCM≤3.2, TJ=25°C 100 130 dB
RejectionRatio 0≤VCM≤3.2 Thetemperatureextremes 90
PowerSupplyRejection TJ=25°C 95 120
PSRR dB
Ratio Thetemperatureextremes 90
T =25°C 105 130
J
R =10kΩ
L
OpenLoopVoltage Thetemperatureextremes 100
A dB
VOL Gain T =25°C 95 132
J
R =2kΩ
L
Thetemperatureextremes 90
T =25°C 4.96 4.978
J
R =10kΩto2.5V, Thetemperatureextremes 4.95
L V
VIN(diff)=±0.5V TJ=25°C 0.040 0.070
OutputSwing Thetemperatureextremes 0.085
(LMP2011only) T =25°C 4.895 4.919
J
R =2kΩto2.5V, Thetemperatureextremes 4.875
L V
VIN(diff)=±0.5V TJ=25°C 0.091 0.115
Thetemperatureextremes 0.140
V
O
T =25°C 4.92 4.978
J
R =10kΩto2.5V, Thetemperatureextremes 4.91
L V
VIN(diff)=±0.5V TJ=25°C 0.040 0.080
OutputSwing Thetemperatureextremes 0.095
(LMP2012only) T =25°C 4.875 4.919
J
R =2kΩto2.5V, Thetemperatureextremes 4.855
L V
VIN(diff)=±0.5V TJ=25°C 0.0.91 0.125
Thetemperatureextremes 0.150
Sourcing,VO=0V, TJ=25°C 8 15
VIN(diff)=±0.5V Thetemperatureextremes 6
I OutputCurrent mA
O
Sinking,VO=5V, TJ=25°C 8 17
VIN(diff)=±0.5V Thetemperatureextremes 6
SupplyCurrentper TJ=25°C 0.930 1.20
I mA
S Channel Thetemperatureextremes 1.50
(1) Limitsare100%productiontestedat25°C.Limitsovertheoperatingtemperaturerangeareensuredthroughcorrelationsusing
statisticalqualitycontrol(SQC)method.
(2) Typicalvaluesrepresentthemostlikelyparametricnorm.
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6.9 5-V AC Electrical Characteristics
T =25°C,V+=5V,V−=0V,V =2.5V,V =2.5V,andR >1MΩ.
J CM O L
PARAMETER TESTCONDITIONS MIN(1) TYP(2) MAX(1) UNIT
GBW Gain-BandwidthProduct 3 MHz
SR SlewRate 4 V/μs
θ PhaseMargin 60 deg
m
G GainMargin −15 dB
m
e Input-ReferredVoltageNoise 35 nV/√Hz
n
e p-p Input-ReferredVoltageNoise R =100Ω,DCto10Hz 850 nV
n S pp
t InputOverloadRecoveryTime 50 ms
rec
(1) Limitsare100%productiontestedat25°C.Limitsovertheoperatingtemperaturerangeareensuredthroughcorrelationsusing
statisticalqualitycontrol(SQC)method.
(2) Typicalvaluesrepresentthemostlikelyparametricnorm.
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6.10 Typical Characteristics
T =25C,V =5Vunlessotherwisespecified.
A S
Figure1.SupplyCurrentvsSupplyVoltage Figure2.OffsetVoltagevsSupplyVoltage
Figure3.OffsetVoltagevsCommonMode Figure4.OffsetVoltagevsCommonMode
10000 500
VS = 5V 400 VS = 5V
z) 300
H
)A 200
V/ 1000 p
E (n ( TN 100
S E
OI RR 0
N U
E C -100
LTAG 100 SAIB -200
VO -300
-400
10 -500
0.1 1 10 100 1k 10k 100k 1M 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
FREQUENCY (Hz) VCM (V)
Figure5.VoltageNoisevsFrequency Figure6.InputBiasCurrentvsCommonMode
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Typical Characteristics (continued)
T =25C,V =5Vunlessotherwisespecified.
A S
120 120
VS = 2.7V VS = 5V
100 VCM = 1V 100 VCM = 2.5V
80 80
NEGATIVE NEGATIVE
R R
R)B R)B
Sd 60 Sd 60
P( P(
40 40
POSITIVE POSITIVE
20 20
0 0
10 100 1k 10k 100k 1M 10M 10 100 1k 10k 100k 1M 10M
FREQUENCY (Hz) FREQUENCY (Hz)
Figure7.PSRRvsFrequency Figure8.PSRRvsFrequency
Figure9.OutputSourcingat2.7V Figure10.OutputSourcingat5V
Figure11.OutputSinkingat2.7V Figure12.OutputSinkingat5V
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