Large Area and Flexible Electronics

588 Pages·2015·15.52 MB·English

by  Mario Caironi

Editedby
MarioCaironiand
Yong-YoungNoh
LargeAreaandFlexibleElectronics
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EditedbyMarioCaironiandYong-YoungNoh
Large Area and Flexible Electronics
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V
Contents
ListofContributors XV
Overview XXIII
PartI:Materials 1
1 PolymericandSmall-MoleculeSemiconductorsforOrganicField-Effect
Transistors 3
HakanUstaandAntonioFacchetti
1.1 Introduction 3
1.2 OrganicSemiconductorStructuralDesign 3
1.3 Thin-FilmTransistorApplications 6
1.4 p-ChannelSemiconductors 8
1.4.1 Polymers 8
1.4.2 SmallMolecules 26
1.5 n-ChannelSemiconductors 37
1.5.1 Polymers 37
1.5.2 SmallMolecules 51
1.6 AmbipolarSemiconductors 68
1.6.1 Polymers 69
1.6.2 SmallMolecules 77
1.7 Conclusions 85
References 85
2 Metal-OxideThin-FilmTransistorsforFlexibleElectronics 101
Yong-HoonKimandSungKyuPark
2.1 Introduction 101
2.2 Metal-OxideTFTs 102
2.2.1 AdvantagesandApplications 102
2.2.2 VacuumDeposition 102
2.2.3 SolutionProcessing 103
2.3 Solution-ProcessedMOThinFilms 103
2.3.1 Nanoparticle-BasedProcess 103
2.3.2 Sol–Gel-BasedProcess 104
VI Contents
2.3.3 HybridType 105
2.4 Low-Temperature-ProcessedMOTFTsforFlexible
Electronics 105
2.4.1 Low-Temperature-ProcessedMOTFTs 106
2.4.1.1 AnnealingEnvironment 106
2.4.1.2 InkFormulation 106
2.4.1.3 AlternateAnnealingProcess 107
2.4.2 PhotochemicalActivationofOxideSemiconductors 107
2.5 Summary 114
References 115
3 CarbonNanotubeThin-FilmTransistors 117
TaishiTakenobu
3.1 Introduction 117
3.2 IndividualSWCNTsandSWCNTThinFilms 118
3.3 ChemicalVaporDepositionGrowthofSWCNTTFTs 118
3.4 Solution-BasedMethodsforSWCNTTFTs 120
3.5 InkjetPrintingofFlexibleSWCNTTFTs 120
3.6 FabricationSchemesforHigh-PerformanceInkjet-Printed
SWCNTTFTs 122
3.7 InkjetPrintingofSWCNTCMOSInverters 124
3.8 InkjetPrintingofAlignedSWCNTFilms 128
3.9 Conclusion 129
References 129
4 OrganicSingle-CrystallineSemiconductorsforFlexibleElectronics
Applications 133
MarcosA.Reyes-Martinez,NicholasS.Colella,andAlejandroL.Briseno
4.1 Introduction 133
4.2 ElectronicandStructuralPropertiesofSingleCrystals 134
4.2.1 IntrinsicTransportProperties 135
4.2.2 CrystalDimensionality 136
4.3 CrystallizationTechniques 138
4.3.1 GrowthfromVaporPhase 138
4.3.2 GrowthfromSolution 138
4.4 Single-CrystalFlexibleElectronicDevices 139
4.4.1 FundamentalMechanicsforFlexibleElectronics 139
4.4.2 MechanicalVersatilityofOrganicSingleCrystals 141
4.4.3 ImportanceofMechanicalPropertiesKnowledge 142
4.4.4 TheElasticConstantsofRubreneSingleCrystals 144
4.5 StrategiesforFlexibleOrganicSingle-CrystalDevice
Fabrication 149
4.5.1 DiscreteUltrathinSingle-CrystalTransistor 150
4.5.2 TransistorArraysBasedonMicropatternedSingle
Crystals 150
Contents VII
4.5.3 FlexibleSingle-CrystalNanowireDevices 156
4.6 Conclusions 158
Acknowledgments 159
References 159
5 Solution-ProcessableQuantumDots 163
HongboLi,VladimirLesnyak,andLiberatoManna
5.1 Introduction 163
5.2 OptimizationoftheColloidalSynthesisofQuantumDotsby
SelectionofSuitableSolvents,Ligands,andPrecursors 164
5.3 Large-ScaleSynthesisofQuantumDots 166
5.4 SurfaceChemistryofQuantumDots 169
5.5 Post-SyntheticChemicalModificationofNanocrystals 174
5.6 ConclusionsandOutlook 179
References 179
6 InorganicSemiconductorNanomaterialsforFlexible
Electronics 187
HoukJang,WonhoLee,Min-SooKim,andJong-HyunAhn
6.1 Introduction 187
6.2 CharacteristicsandSynthesisofInorganicSemiconducting
NMs 188
6.2.1 CharacteristicsofInorganicNMs 188
6.2.1.1 MechanicalPropertiesofInorganicNMsinBendingand
Stretching 188
6.2.1.2 OptoelectricalProperties 191
6.2.2 FabricationofInorganicNMsforFlexibleElectronics 193
6.2.2.1 SelectiveEtching 193
6.2.2.2 AnisotropicEtching 194
6.2.2.3 MassProductionofInorganicNMs 195
6.2.2.4 TransferProcess 197
6.3 ApplicationsinFlexibleElectronics 198
6.3.1 FlexibleElectronics 198
6.3.1.1 FlexibleSolarCell 198
6.3.1.2 FlexibleMemory 201
6.3.1.3 FlexibleHigh-FrequencyTransistor 202
6.3.1.4 FoldableTransistorUsingUltrathinSiNMs 203
6.3.2 ConformalDevice 205
6.3.2.1 ConformalBiomonitoringSystem 206
6.3.3 StretchableElectronics 207
6.3.3.1 StretchableLogicCircuit 207
6.3.3.2 StretchableLight-EmittingDiode 211
6.3.3.3 Photodetector 211
6.3.4 UtilizingDeformationofNMs 215
6.3.4.1 NanogeneratorandActuator 217
VIII Contents
6.3.4.2 RFDeviceUsingStrainedNMs 218
6.3.5 TransparentTransistor 219
6.4 ConcludingRemarks 221
References 221
7 DielectricMaterialsforLarge-AreaandFlexible
Electronics 225
SungjunPark,SujinSung,Won-JuneLee,andMyung-HanYoon
7.1 Introduction 225
7.2 GeneralPolymerDielectrics 226
7.3 Cross-LinkedPolymerDielectrics 227
7.4 High-kPolymerDielectrics 228
7.5 ElectrolyteGateDielectrics 230
7.6 Self-AssembledMolecularLayerDielectrics 234
7.7 HybridDielectrics 237
7.7.1 Organic–InorganicLaminatedBilayers/Multilayers 237
7.7.2 OrganicPolymeric/InorganicNanoparticleand
Nanocomposites 238
7.7.3 HybridDielectricsBasedonOrganosiloxaneand
Organozirconia 240
7.8 Sol–GelHigh-kInorganicDielectrics 243
7.9 SummaryandOutlook 246
References 247
8 Electrolyte-GatingOrganicThinFilmTransistors 253
MoonSungKang,JeongHoCho,andSeHyunKim
8.1 Introduction 253
8.2 Electrolyte-GatedOTFTOperationMechanisms 255
8.3 ElectrolyteMaterials 257
8.4 OTFTsGatedwithElectrolyteDielectrics 260
8.5 CircuitsBasedonElectrolyte-GatedOTFTs 263
8.6 Conclusions 267
References 267
9 VaporBarrierFilmsforFlexibleElectronics 275
Seok-JuKang,ChuanLiu,andYong-YoungNoh
9.1 Introduction 275
9.2 Thin-FilmPermeationBarrierLayers 277
9.3 PermeationthroughInorganicThinFilms 280
9.4 Time-ResolvedMeasurementsonBarrierLayers 283
9.5 MechanicalLimitationsofInorganicFilms 284
9.6 MechanicsofFilmsonFlexibleSubstrates 284
9.7 Summary 286
References 287