Journal of Non-Crystalline Solids 2001: Vol 280 Index

9 Pages·2001·1.9 MB·English

NON-CRYSTALLINE SOLIDS
ELSEVIER Journal of Non-Crystalline Solids 280 (2001) 293-296
www.elsevier.com/locate/jnoncrysol
Author Index
\lessandri, M., see Polignano, M.L (2001) 39 Boivin, Ph., see Plossu, C 280 (2001) |
Allieri, B., see Caccavale, I (2001) 156 Boivin, Ph., see Sorbier, J.P 280 (2001)
Ananou, B., see Goguenheim, D 280 (2001) 78 Bouchakour, R., N. Harabech, P. Ca-
Anedda, A., C.M. Carbonaro, A. Serpi. net, J.M. Mirabel. Ph Boivin and
N. Chiodini, A. Paleari, R. Scotti, O. Pizzuto, A new phy sical-based
G. Spinolo, G. Brambilla and \V compact model of floating-gate EE-
Pruneri, Vacuum ultraviolet absorp- PROM cells (2001)
tion spectrum of photorefractive Sn- Bouchakour, R., see Canet, P (2001)
doped silica fiber preforms (2001) 23 Bouchakour, R., see Plossu, ¢ (2001) |
Anedda, A., C.M. Carbonaro, R. Cor- Bouchakour, R., see Sorbier, J.P 2001)
pino and A. Serpi, Absorption spec- Bouchakour, R., see Yao, T 2001)
trum of Ge-doped silica samples and Boukenter, A., see Kuswanto, H (2001)
fiber preforms in the vacuum ultra- Brambilla, G.. see Anedda, A ) (2001)2
violet region 280 (2001) Bravaix, A., see Goguenheim, D llltttttyeyyeyeo (2001)
Armellini, C., see Duverger, € 280 (2001) Busan, T., R.A.B. Devine, M. Martini,
Arnaud, F., see Bidaud, M 280 (2001) 3 G. Spinolo and A. Vedda, Electro-
Autran , J.-1 , see Bidaud, M 280 (2001) nic traps in mixed Si, ,Ge,O, films
Autran, J.-L., see Masson, P 280 (2001) 2
Autran , JI . see Sune, J 280 (2001) 127 ‘accavale, F.. C. Sada, F. Segato, B
Autran, J J.-L.. see Pic, N. 280 (2001) 69 Allieri, L.E. Depero, L. Sangaletti,
Aymerich, X., see Porti, M 280 (2001) 138 V.A. Fedorov, Yu.N. Korkishko
‘ and T.V. Morozova, Microanalyti-
Balland, B., see Croci, S 280 (2001) 202 cal study of Er-doped LiNbO, crys-
Barbera, M., see Cannas, M. 280 (2001) 188 tals obtained by Er—Li ion exchange 280 (2001) 156
Barla, K., see Bidaud, M 280 (2001) 32 ‘andelori, A., A. Paccagnella, G. Rag-
Barla, K., see Jacques, D 280 (2001) 59 gi, J. Wyss, D. Bisello and G. Ghidi-
Bartolotta, A., G. Carini, G. D'Angelo, ni, High energy Si ion irradiation
M. Ferrari, A. Fontana, M. Mon- effects on 10 nm thick oxide MOS
tagna, F. Rossi and G. Tripodo, A capacitors 2001)
study of Raman spectroscopy and ‘anet, P.. R. Bouchakour, N. Hara-
low-temperature specific heat in bech, Ph. Boivin, J.M. Mirabel and
gel-synthesized amorphous silica 280 (2001) 249 C. Plossu, Improvement of EE-
Bartolotta, A., see D'Angelo, G 280 (2001) 2 PROM cell reliability by optimiza-
Basile, F., see Santucci, S 280 (2001) 5 tion of signal programming 280 (2001) 116
Battaglin, G., see Gonella, F 280 (2001) anet, P., see Bouchakour, R 280 (2001) 122
Bersani, M., see Polignano, M.L 280 (2001) ‘annas, M. and M. Leone, Photolumi-
Bidaud, M., F. Guyader, F. Arnaud, J.- nescence at 1.9 eV in synthetic wet
L. Autran and K. Barla, 1.5-2.5 nm silica 280 (2001)
RTP gate oxides: process feasibility, ‘annas, M., F.M. Gelardi, F. Pullara,
properties and limitations 280 (2001) M. Barbera, A. Collura and S. Var-
Billiot, G., see Yao, T. 280 (2001) isco, Absorption band at 7.6 eV in-
Bisello, D., see Candelori, A. 280 (2001) 192 duced by y-irradiation in. silica
Boivin, Ph., see Bouchakour, R. 280 (2001) glasses 280 (2001)
Boivin, Ph., see Canet, P. 280 (2001) ‘antin, J.-L., HJ. von Bardeleben, L
Boivin, Ph., see Croci, S 280 (2001) 202 Georges Gosset, J.-J. Ganem and
(0022-3093/01/S - see front matter © 2001 Elsevier Science B.V. All rights reserved.
PII: S0022-3093(01)00369-6
294 futhor index
1. Trimaille, Interface modification Ferrari, M., see Duverger, C. 280 (2001) 261
of ultrathin SiO,/Si(001) by nitric Ferrari, M., see Rolli, R. 280 (2001) 969
oxide treatments: a comparative Fontana, A., M. Montagna, L. Righet-
electron paramagnetic resonance ti, F. Rossi, G. Cicognani, A.J. Dia-
and nuclear reaction analysis study 280 (2001) noux and F. Terki, Inelastic neutron
‘arbonaro, C.M., see Anedda, A. 280 (2001) scattering on silica xerogel porous
‘arbonaro, C.M., see Anedda, A 280 (2001) 2 systems 280 (2001) 217
‘aricato, A.P., see Polignano, M.L 280 (2001) Fontana, A., see Bartolotta, A 280 (2001) 249
arini, G., see Bartolotta, A 280 (2001) 249 Fontana, A., see D’Angeio, G 280 (2001) 222
‘arini, G., see D'Angelo, G. 280 (2001) ‘ps! Fontana, A., see Pilla, O. 280 (2001) 164
‘assan, E., P. Dollfus and S. Galdin, Fossi, M., see Duverger, C 280 (2001) 261
Wave-mechanical study of gate tun-
neling leakage reduction in ultra- Galdin, S., see Cassan, I 280 (2001) 63
thin (<2 nm) dielectric MOS and Ganem, J.-J., see Cantin, J.-L 280 (2001) 143
H-MOS devices 280 (2001) V3~ Gelardi, F.M., see Cannas, M. 280 (2001) 188
‘attaruzza, E., see Gonella, F. 280 (2001) 241 Georges Gosset, L. , see Cantin, J.-L. 280 (2001) 143
‘hiodini, N., see Anedda, A 280 (2001) 7a 7 Ghibaudo, G., see Masson, P. 280 (2001) 255
‘icognani, G., see Fontana, A 280 (2001) 217 Ghidini, G., see Candelori, A. 280 (2001)
ollura, A., see Cannas, M 280 (2001) 188 Glachant, A., see Pic, N. 280 (2001) 69
‘orpino, R., see Anedda, A. 280 (2001) 281 Goguenheim, D.. A. Bravaix., B. Ana-
rivelli, B., see Polignano, M.L 280 (2001) 39 nou, C. Trapes, F Mondon and G.
roci, S., C. Plossu, B. Balland, C. Ray- Reimbold, Temperature and_ field
naud and Ph. Boivin, Effect of some dependence of stress induced leak-
technological parameters on Fow- age currents in very thin (<5 nm)
ler-Nordheim injection through gate oxides 280 (2001)
tunnel oxides for non-volatile mem- Goguenheim, D., see Pic, N. 280 (2001)
ores 280 (2001) 1)? Gonella, F.. E. Cattaruzza, G. Batta-
Croci, S., see Plossu, C 280 (2001) 103 glin, F. D’Acapito, C. Sada, P. Maz-
Croci, S.. see Sorbier, J.P 280 (2001) 96 zoldi, C. Maurizio, G. Mattei, A.
Martorana, A. Longo and F. Zon-
D’Acapito, F., see Gonella, F 280 (2001) 241 tone, Double implantation in silica
D'Angelo, G., G. Tripodo, A. Bartolot- glass for metal cluster composite
ta, G. Carini, A. Fontana, M. Mon- formation: a study by synchrotron
tagna, | Rossi, M. Ferrari and F. radiation techniques 280 (2001)
Terki, Low-temperature — specific Goutaland, F., see Kuswanto, H. 280 (2001)
heats of porous silica xerogels of Grupp, C., see Jolly, I 280 (2001)
low densities 280 (2001) 222 Guerrieri, S., see Santucci, S. 280 (2001)
D’Angelo, G., see Bartolotta, A. 280 (2001) 249 Guyader, F., see Bidaud, M. 280 (2001)
Depero, L.E., see Caccavale, F. 280 (2001) 156
Devine, R.A.B., see Busani, T 280 (2001) 177 Harabech, N . see Bouchakour, R. 280 (2001) 122
Dianoux, A.J., see Fontana, A. 280 (2001) 217 Harabech, N., see Canet, P. 280 (2001) 116
DiGiacomo, A., see Santucci, $ 280 (2001) 228 Harrabech, N., see Sorbier, J.P. 280 (2001) 96
Dollfus, P., see Cassan, E. 280 (2001) 63 Haung, T.Y., see Horng, R.H. 280 (2001) 48
Dufour, G., see Jolly, f 280 (2001) 150 Hensley, D.K., see Magruder III, R.H 280 (2001) 169
Duverger, C., M. Montagna, R. Rolli, Hoarau, J.Y., see Pic, N 280 (2001) 69
S. Ronchin, L. Zampedri, M. Fossi, Horng, R.H., D.S. Wuu, C.Y. Kung,
S. Pelli, G.C. Righini, A. Monteil, EC. “Ein, 'C.C,. Een, TY. Hating
C. Armellini and M Ferrari, Er- and S.M. Sze, lon-implanted treat-
bium-activated silica xerogels: spec- ment of (Ba,Sr)TiO; films for
troscopic and optical properties 280 (2001) 261 DRAM applications 280 (2001) 48
Duverger, C., see Rolli, R 280 (2001) 269 Horng, R.H., see Wuu, D.S. 280 (2001) 211
Ebersberger, B., see Porti, M. 280 (2001) 138 Jacques, D., J.L. Regolini and K. Barla,
Interface studies of silicon nitride di-
Fama, F., see Santucci, $ 280 (2001) 54 electric layers 280 (2001) 59
Fedorov, V.A., see Caccavale, I 280 (2001) 156 Jha, A., see Rolli, R. 280 (2001) 269
Ferrari, M., see Bartolotta, A 280 (2001) 249 Jolly, F., F. Rochet, G. Dufour, ‘C.
Ferrari, M., see D’Angelo, G 280 (2001) Se Grupp and A. Taleb-Ibrahimi, Oxi-
futhor index 95
dized silicon surfaces studied by Morozova, T.V., see Caccavale, F. 280 (2001) 156
high resolution Si 2p core-level Moser. E; see Rolli, R. (2001) 269
photoelectron spectroscopy using
synchrotron radiation 280 (20011)5 0 Nafria, M., see Porti, M (2001) 13%
Jourdain, M., see Simonetti, O. 280 (20011)1 0 Nardi, N., see Santucci, S (2001)
Nitsche, S., see Pic, N. (2001)
Korkishko, Yu.N., see Caccavale, F. 280 (2001) 156
Kung, C.Y., see Horng, R.H. 280 (2001) 48 Olbrich, A., see Porti, M 280 (2001)
Kuswanto, H., F. Goutaland, A. Yah- Oriols, X., see Miranda, E 280 (2001)
ya, A. Boukenter and Y. Ouerdane, Oriols, X., see Sune, J 280 (2001)
Temperature, H» loading and ultra Ouerdane, Y., see Kuswanto, H 280 (2001) 2
violet irradiation effects in germano-
Paccagnella, A., see Candelori, A 280 (2001)
silicate optical fibers: laser spectro-
Paleari, A., see Anedda, A 280 (2001)
scopy measurements 280 (2001) 2
Passacantando, M., see Santucci, S 280 (2001)
Pavia, G., see Pellizzer, I 280 (2001) 2
la Cecilia, A.V., see Santucci, S. 280 (2001) 228 Pelli, S., see Duverger, C. 280 (2001) 261
Laffont, R., see Plossu, C. 280 (20011)0 3 Pellizzer, F. and G. Pavia, Precise elec-
Leone, M., see Cannas, M. 280 (20011)8 3
trical evaluation of active oxides
Leu, C.C., see Horng, R.H. 280 (2001) 48 thickness and comparison with
Liao, F.C., see Wuu, DS. 280 (20012)1 1 TEM measurements 280 (2001)
Lin, C.C., see Wuu, D.S. 280 (20012)1 1 Petit, C., see Zander, D. 280 (2001)
Lin, J.C., see Horng, R.H. 280 (2001) 48
Phani, R.A., see Santucci, S 280 (2001)
Longo, A., see Gonella, F. 280 (20012)4 1 Pic, N., A. Glachant, S. Nitsche, J.Y
Lozzi, L., see Santucci, S. 280 (200122)i2¢ 8 Hoarau, D. Goguenheim, D. Vuil-
laume, A. Sibai and J.-L. Autran,
Magruder III, R.H., R.A. Weller, R.A. Determination of the electrical
Weeks, J. Wehrmeyer, R.A. Zuhr properties of 2.5 nm thick silicon-
and D.K. Hensley, Effects of ArF based dielectric films: thermally
excimer irradiation on single energy grown SiO 280 (2001)
and multi energy Ge ion implanted Picozzi, P., see Santucci, S. 280 (2001)
silica 280 (2001) 169 Pilla, O., A. Fontana and G. Viliani,
Martini, M., see Busani, T. 280 (20011)7 7 From aerogels to compact glasses:
Martorana, A., see Gonella, F. 280 (2001) 241 effect of the density on the dynami-
Masson, P., J.-L. Autran and G. Ghi- cal structure factor 280 (2001)
baudo, An improved time domain Pizzuto, O., see Bouchakour, R. 280 (2001)
analysis of the charge pumping cur- Plossu, C., S. Croci, N. Monti, R. Bou-
rent 280 (20012)5 5 chakour, R. Laffont, Ph. Boivin and
Mattei, G., see Gonella, F. 280 (2001) 241 J.M. Mirabel, Conduction proper-
Maurel, T., see Simonetti, O. 280 (20011)1 0 ties of electrically erasable read only
Maurizio, C., see Gonella, F. 280 (2001)24 1 memory tunnel oxides under dy-
Mazzoldi, P., see Gonella, F. 280 (20012)4 1 namic stress 280 (2001) 103
Meinertzhagen, A., see Zander, D. 280 (2001) 86 Plossu, C., see Canet, P. 280 (2001) 116
Mirabel, J.M., see Bouchakour, R. 280 (20011)2 2 Plossu, C., see Croci, S. 280 (2001) +)?
Mirabel, J.M., see Canet, P. 280 (2001) 116 Plossu, C., see Sorbier, J.P. 280 (2001) 96
Mirabel, J.M., see Plossu, C. 280 (20011)0 3 Polignano, M.L., M. Alessandri, B. Cri-
Miranda, E., J. Suné and X. Oriols, velli, R. Zonca, A.P. Caricato, M.
Linear and non-linear conduction Bersani, M. Sbetti and L. Vanzetti,
regimes in broken down gate oxi- The impact of the nitridation pro-
des 280 (20011)3 2 cess on the properties of the
Mondon, F., see Goguenheim, D. 280 (2001) 78 Si-Si0, interface 280 (2001)
Montagna, M., see Bartolotta, A. 280 (20012)4 9 Porti, M., R. Rodriguez, M. Nafria, X
Montagna, M., see D’Angelo, G. 280 (20012)2 2 Aymerich, A. Olbrich and B. Ebers-
Montagna, M., see Duverger, C. 280 (20012)6 1 berger, Feasibility of the electrical
Montagna, M., see Fontana, A. 280 (20012)1 7 characterization of single SiO,
Montagna, M., see Rolli, R. 280 (20012)6 9 breakdown spots using C-AFM 280 (2001) 138
Monteil, A., see Duverger, € 280 (20012)6 1 Pruneri, V., see Anedda, A. 280 (2001) 287
Monti, N., see Plossu, C. 280 (20011)0 3 Pullara, F., see Cannas, M. 280 (2001) 188
296 futhor index
Raggi, G., see Candelori, A 280 (2001) 193 and R. Bouchakour, Extraction of
Raynaud, C., Silica films on silicon car- band diagram parameters from
bide: a review of electrical properties Fowler-Nordheim model in silicon
and device applications 280 (2001) dioxide 280 (2001) 96
Raynaud, C., see Croci, $ 280 (2001) Spinolo, G., see Anedda, A. 280 (2001) 287
Regolini, J.1 . see Jacques, D 280 (2001) Spinolo, G., see Busani, T. 280 (2001) 177
Reimbold, G., see Goguenheim, D 280 (2001) Sune, J., see Miranda, E 280 (2001)
Renard, S., see Sorbier, J.P 280 (2001) 96 Sune, J.. X. Oriols and J.-L. Autran,
Righetti. | . see Fontana, A 280 (2001) 22 17 Non-equilibrium gate tunneling cur-
Righini, G.C., see Duverger, C 280 (2001) 261 rent in ultra-thin (<2 nm) oxide
Rochet, F., see Jolly. | 280 (2001) 150 MOS devices 280 (2001)
Rodriguez, R., see Porti, M I8O (2001) 38 Sze, S.M., see Horng, R.H 280 (2001)
Rolli, R., S. Ronchin, M. Montagna, E.
Moser, C. Duverger, V.K. Tikhomir- Taleb-Ibrahimi, A., see Jolly, F 280 (2001)
ov. A. Jhaand M. Ferrari, Yellow-to- Terki, F., see D'Angelo, G 280 (2001)
blue frequency upconversion in Pr°”- Terki, F., see Fontana, A. 280 (2001) 2
doped aluminium fluoride glasses 280 (2001) 269 Tikhomirov, V.K., see Rolli, R 280 (2001) 269
Rolli, R., see Duverger, C 280 (2001) 261 Trapes, C., see Goguenheim, D. 280 (2001)
Ronchin, S., see Duverger, C 280 (2001) 261 Trimaille, I., see Cantin, J.-L. 280 (2001) 143
Ronchin, S., see Rolli, R 280 (2001) 269 Tripodo, G., see Bartolotta, A 280 (2001) 249
Rossi, F., see Bartolotta, A 280 (2001) 249 Tripodo, G., see D’Angelo, G. 280 (2001) 2,2”,29
Rossi, F., see D'Angelo, G 280 (2001) 299
Rossi, | see Fontana, A 280 (2001) at7 Vanzetti, L.. see Polignano, M.L. 280 (2001) 39
Varisco, S., see Cannas, M 280 (2001) 188
Sada, ¢ . see Caccavale, I 280 (2001) 156 Vedda, A., see Busani, T 280 (2001)
Sada, ¢ . see Gonella, f 280 (2001) 241] Viliani, G.. see Pilla, O. 280 (2001) 164
Saigne, I . see Zander, D 280 (2001) von Bardeleben, H.J.. see Cantin, J.-L. 280 (2001) 143
Sangaletti, L., see Caccavale. I 280 (2001) Vuillaume. D., see Pic, N 280 (2001) 69
Santucci, S., A.V. la Cecilia, A. DiGia-
como, R.A. Phani and L. Lozzi, X- Weeks, R.A., see Magruder III, R.H. 280 (2001) 169
ray reflectivity studies of very thin Wehrmeyer, J., see Magruder III, R.H. 280 (2001) 169
films of silicon oxide and silicon Weller, R.A., see Magruder III, R.H. 280 (2001) 169
oxide-silicon nitride stacked struc- Wuu, D.S., R.H. Horng, F.C. Liao and
tures 280 (2001) 22 C.C. Lin, Nitridation of (Ba.Sr)TiO
Santucci, S.. S. Guerrieri, M. Passacan- films in an inductively coupled plas-
tando, P. Picozzi, F. Fama, N. Nardi ma 280 (2001)
and F. Basile, Effects of rapid ther- Wuu. D.S., see Horng, R.H. 280 (2001)
mal treatments on the electrical prop- Wyss, J., see Candelori, A 280 (2001)
erties of thin SiO, gate oxide for
DRAM p-channel MOS transistors 280 (2001) 54 Yahya, A., see Kuswanto, H. 280 (2001) 2
Sbetti, M., see Polignano, M.L 280 (2001) 39 Yao, T., R. Bouchakour and G. Billiot,
Scotti, R., see Anedda, A 280 (2001) 287 Analytical model of Fowler-Nord-
Segato, F., see Caccavale, I 280 (2001) 156 heim tunnel injection for design
Serpi, A., see Anedda, A 280 (2001) 281 and simulation of complex mem-
Serpi, A., see Anedda, A 280 (2001) 287 ories circuits 280 (2001) 9?
Sibai, A., see Pic, N 280 (2001) 69
Simonetti, O., T. Maurel and M. Jour- Zampedri, L., see Duverger, C 280 (2001) 261
dain, Extraction of the oxide thick- Zander, D., F. Saigne, C. Petit and A.
ness using a MOS. structure Meinertzhagen, Electrical stress ef-
quantum model for SiO, oxide <5 fects on ultrathin (2.3 nm) oxides 280 (2001) 86
nm thick films 280 (2001) Zonca, R., see Polignano, M.L. 280 (2001) 39
Sorbier, J.P.. C. Plossu, S. Croci, Ph Zontone, F., see Gonella, F. 280 (2001) 241
Boivin, S. Renard, N. Harrabech Zuhr, R.A., see Magruder III, R.H. 280 (2001) 169
NON-CRYSTALLINE SOLIDS
ELSEVIER Journal of Non-Crystalline Solids 280 (2001) 29 299
www.elsevier.com/locate/jnoncrysol
Subject Index
Absorption Dynamical Structure
Germanium, Ion Implantation, Silica 280 (2001) Aerogels, Density. Silicon Dioxide (2001) 164
Optical Properties, Preforms, Radiation
Effects 280 (2001) 2 Electric Properties
Capacitance Methods, Interfaces.
Aerogels
Silicon Nitride 2001)
Density, Dynamical Structure. Silicon
Silica, Thermal Properties, Transistors 2001)
Dioxide (2001)
Electrical Properties
Annealing Effects
Electrical Properties, Silica, Thin Film lon Implantation, Oxides. Thin Films (2001)
Annealing Effects, Silica, Thin Film
rransistors (2001)
Transistors (2001)
Atomic Force Microscopy Oxides, Thin Films 2001)
Electrical Properties, Silicon Dioxide. Silicon Dioxide, Thin Film Transistors.
Thin Films (2001) Thin Films (2001)
Modelling, Photochromism, Transitors 2001)
Capacitance Methods Transistors. Tunneling 2001)
Electric Properties, Interfaces, Silicon Silicon Dioxide, Transistors 2001)
Nitride (2001) 59 \tomic Force Microscopy, Silicon
lon Irradiation, Oxides, Silicon (2001) 193 Dioxide, Thin Films 2001)
Thin Film Transistors. Oxides, Thin
Chemical Vapor Deposition Films 2001) 2
Fibers, Germanium. Optical Properties.
Silica 280 (2001) 2 Fibers
Hydrogen Effects. Radiation Effects 001) 27
Clusters Chemical Vapor Deposition,
Composites, lon Implantation, Silica 280 (2001) 2 Germanium, Optical Properties.
Silica 2001)2
Composites
Gels
Clusters, Ion Implantation, Silica 280 (2001) 241
Neutron Inelastic Scattering, Porosity 2001)2
Defects Density, Thermal Properties 2001) >i e ke)
Germanium, Oxides, Silicon 280 (2001) 177
Germanium
Luminescence, Silica 280 (2001) 183
Absorption, lon Implantation, Silica 280 (2001) 169
177
Defects, Oxides, Silicon 280 (2001)
Densification
Chemical Vapor Deposition, Fibers,
Luminescence, Raman Spectra, Rare
Earth Ions, Sol-Gel Method 280 (2001) Optical Properties, Silica (2001)2 2 81
Halide Glasses
Density
Luminescence, Rare Earth lons (2001)
Aerogels, Dynamical Structure, Silicon
Dioxide 280 (2001) 164 Hydrogen Effects
Gels, Thermal Properties 280 (2001) 222 Fibers. Radiation Effects 280 (2001) 27
Dynamical Properties Interfaces
Transistors 280 (2001) 116 Nitridation, Silicon, Silicon Dioxide (2001) 39
0022-3093/01/$ - see front matter © 2001 Elsevier Science B.V. All rights reserved.
PII: S0022-3093(01)00370-2
298 Subject index
Capacitance Methods, Electric Nitridation, Plasma Deposition, Thin
Properties, Silicon Nitride (2001) Films 280 (2001)
Nitridation, Silicon Dioxide, Thin Electrical Properties, Thin Films, Thin
Films (2001) Film Transistors 280 (2001)
lon Exchange
Phase Transition
Rare Earth Ions, Secondary Ion Mass
Theory, Transistors, Trapping 280 (2001)
Spectroscopy (2001)
Photochromism
lon Implantation Electrical Properties, Modelling,
Electrical Properties, Oxides, Thin Transistors 280 (2001)
Films (2001) 48
Absorption, Germanium, Silica (2001) 169 Plasma Deposition
Clusters, Composites, Silica (2001) 241 Nitridation, Oxides, Thin Films 280 (2001)
lon Irradiation Porosity
Capacitance Methods, Oxides, Silicon (2001) Gels, Neutron Inelastic Scattering 280 (2001) 2
Luminescence Preforms
Defects, Silica (2001) Absorption, Optical Properties.
Densification, Raman Spectra, Rare Radiation Effects 280 (2001)
Earth lons, Sol-Gel Method (2001) 261
Halide Glasses, Rare Earth Ions (2001) 969 Processing Variables
Oxides, Transistors 280 (2001)
Modelling
Electrical Properties, Photochromism, Radiation Effects
Transistors (2001) Optical Properties, Silica, Ultraviolet
Thin Films, Transistors (2001) Absorption 280 (2001) 188
Transistors (2001) Fibers, Hydrogen Effects 280 (2001)
Absorption, Optical Properties,
Neutron Inelastic Scattering Preforms 280 (2001) 2
Gels. Porosity (2001)2
Raman Spectra
Nitridation Silica, Sol-Gel Processes, Thermal
Interfaces, Silicon, Silicon Dioxide (2001) Properties 280 (2001) 249
Interfaces, Silicon Dioxide, Thin Films (2001) Densification, Luminescence, Rare
Oxides, Plasma Deposition, Thin Films (2001) Earth Ions, Sol-Gel Method 280 (2001) 261
Optical Properties Rare Earth Ions
Radiation Effects, Silica, Ultraviolet lon Exchange, Secondary Ion Mass
Absorption 280 (2001) Spectroscopy 280 (2001) 156
Chemical Vapor Deposition, Fibers, Densification, Luminescence, Raman
Germanium, Silica 280 (2001) 2 Spectra, Sol-Gel Method 280 (2001) 261
Absorption, Preforms, Radiation Halide Glasses, Luminescence 280 (2001) 269
Effects 280 (2001) 2
Secondary Ion Mass Spectroscopy
Oxidation Ion Exchange, Rare Earth Ions 280 (2001)
Silica, Silicon Carbide, Thin Films 0 (2001)
Silica
Oxides Oxidation, Silicon Carbide, Thin Films 280 (2001)
Processing Variables, Transistors 280 (2001) Annealing Effects, Electrical Properties,
Electrical Properties, lon Implantation, Thin Film Transistors 280 (2001)
hin Films 280 (2001) Electric Properties, Thermal Properties,
Theory, Transistors, Tunneling 280 (2001) Transistors 280 (2001)
Electrical Properties, Thin Films 280 (2001) Absorption, Germanium, Ion Implan-
Defects, Germanium, Silicon 280 (2001) tation 280 (2001) 169
Capacitance Methods, Ion Irradiation, Defects, Luminescence 280 (2001) 183
Silicon 280 (2001) Optical Properties, Radiation Effects,
Transistors, Tunneling 280 (2001) Ultraviolet Absorption 280 (2001) 188
Subject index
Clusters, Composites, lon Implantation 280 (2001) 241 Thin Film Transistors
Raman Spectra, Sol-Gel Processes, Annealing Effects, Electrical Properties.
Thermal Properties 280 (2001) 249 Silica 280 (2001)
Chemical Vapor Deposition, Fibers, Electrical Properties, Silicon Dioxide,
Germanium, Optical Properties 280 (2001) 281 Thin Films 280 (2001)
Electrical Properties, Oxides, Thin
Silicon Carbide Films 280 (2001)
Oxidation, Silica, Thin Films (2001)
Thin Films
Silicon Dioxide Oxidation, Silica, Silicon Carbide 2 2001)
Interfaces, Nitridation, Silicon (2001) Electrical Properties, lon Implantation
Electrical Properties, Thin Film Oxides 280 (2001)
Transistors, Thin Films (2001) Electrical Properties, Oxides 280 (2001)
Theory, Tunneling (2001) Electrical Properties, Silicon Dioxide,
Thin Films, Tunneling (2001) Thin Film Transistors 280 (2001)
Electrical Properties, Transistors (2001) Modelling. Transistors 280 (2001)
Atomic Force Microscopy, Electrical Silicon Serie Tunneling 280 (2001)
Properties, Thin Films 280 (2001) 138 Atomic Force Microscopy, Electrical
Interfaces, Nitridation, Thin Films (2001) 143 Properties, Silicon Dioxide 280 (2001)
Aerogels, Density, Dynamical Structure 280 (2001) 164 Interfaces, Nitridation, Silicon Dioxide 280 (2001)
Silicon Nitride, Thin Films, X-ray Nitridation, Oxides, Plasma Deposition 280 (2001) 2
Diffraction 280 (2001) 22 Silicon Dioxide, Silicon Nitride. X-ray
has ae Diffraction 280 (2001) 22
Silicon Nitride ; :
; Electrical Properties, Oxides, Thin Film
Capacitance Methods. Electric . -
: = Transistors ? 2001)
Properties, Interfaces (2001)
Silicon Dioxide, Thin Films, X-ray Transistors
Diffraction (2001) 228 Oxides, Processing Variables 280 (2001)
Silicon Oxides, Theory, Tunneling 280 (2001)
Interfaces, Nitridation, Silicon Dioxide 280 (2001) 39 Rictne Propertes, Satce, Thermal 4 a
Surface Properties, Surface Reactions 280 (2001) 150 Properties 280 (2001)
Defects, Germanium, Oxides 280 (2001) 177 raat ranean, innit > 5 >
Capacitance Methods, Ion Irradiation, Oxides 280 (2001) 193 leeeriemeen oe pong caren
Electrical Properties, Tunneling 280 (2001) 103
Sol-Gel Method Modelling, Thin Films 280 (2001) 110
Densification, Luminescence, Raman Dynamical Properties 280 (2001) 116
Spectra, Rare Earth Ions (2001) 261 Modelling 280 (2001) 122
Electrical Properties, Silicon Dioxide 280 (2001) 132
Sol-Gel Processes Oxides, Tunneling 280 (2001) 202
Raman Spectra, Silica, Thermal Phase Transition, Theory, Trapping 280 (2001) 255
Properties 280 (2001) 249
Trapping
Surface Properties Phase Transition, Theory, Transistors 280 (2001)
Silicon, Surface Reactions (2001) 150
Tunneling
Surface Reactions Oxides. Theory. Transistors 280 (2001)
Silicon, Surface Properties 280 (2001) 150 Silicon Dioxide, Theory 280 (2001) 96
Electrical Properties, Transistors 280 (2001) 103
Theory Silicon Dioxide, Thin Films 280 (2001) 127
Oxides, Transistors, Tunneling 280 (2001) Oxides, Transistors 280 (2001) 2
Silicon Dioxide, Tunneling 280 (2001)
Phase Transition, Transistors, Trapping 280 (2001) 255 Ultraviolet Absorption
Optical Properties, Radiation Effects,
Thermal Properties Silica 280 (2001)
Electric Properties, Silica, Transistors 280 (2001)
Density, Gels 280 (2001) 222 X-ray Diffraction
Raman Spectra, Silica, Sol-Gel Silicon Dioxide, Silicon Nitride, Thin
Processes 280 (2001) 249 Films 280 (2001) 228