NON-CRYSTALLINE SOLLDS Editor: R.A. Weeks Co-editor: D.L. Kinser Nashville, TN, USA Regional Editors: G.H. Frischat, Clausthal, Germany G.N. Greaves, Aberystwyth, UK H. Kawazoe, Yokohama, Japan J. JNCSBJ MASTER INDEX VOLS. 181-200 December li, 1996 ISSN 0022-3093 http://www.elsevier.nl JOURNAL OF NON-CRYSTALLINE SOLIDS A journal on the chemical, electronic, optical, and mechanical properties of glasses, amorphous semiconductors and metals, sol—gel materi- als, the liquid state of these solids, and the processes by which they are formed. Founding Editor: Professor J.D. Mackenzie Editor: R.A. Weeks Co-editor: D.L. Kinser Editorial Assistant: A. Cook +1-615 322 2923 +1-615 322 2058 Vanderbilt University, 610 Olin Hall, Nashville, TN 37240, USA Fax: +1-615 343 8645. E-mail: [email protected] Regional Editors G.H. Frischat, Institut fiir Nichtmetallische Werkstoffe, Technische Universitat Clausthal, D-36878 Clausthal-Zellerfeld, Germany G.N. Greaves, Department of Physics, University of Wales, Penglais, Aberystwyth, Ceredigion SZ23 3BZ, UK H. Kawazoe, Tokyo Institute of Technology, Materials and Structures Laboratory, 4259 Nagatsuta, Midori-ku, Yokohama 226, Japan J. Lucas, Laboratoire des Verres et Céramiques, Université de Rennes I, Ave. du Général Leclerc, Campus de Beaulieu, 35042 Rennes cedex, France J.H. Simmons, Department of Materials Science and Engineering, University of Florida, 154A Rhines Hall, Gainesville, FL 32611-2066, USA Advisory Editorial Board Australia People’s Rep. of China Taiwan D.R. McKenzie, Sydney Gan Fuxi, Shanghai Jenn-Ming Wu, Hsinchu Austria Portugal United Kingdom J. Hafner, Vienna R.M. Almeida, Lisbon S.R. Elliott, Cambridge A.C. Wright, Reading Belgium Russia G.J. Adriaenssens, Heverlee-Leuven V.I. Arbuzov, St Petersburg USA O.V. Mazurin, St Petersburg S.W. Freiman, Gaithersburg, MD Brazil D.L. Griscom, Washington, DC E.D. Zanotto, Sao Carlos South Korea K. Kelton, St Louis, MO U.-C. 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Fort Lowell Road Tucson, AZ 85712 JOURNAL OF NON-CRYSTALLINE SOLIDS A journal on the chemical, electronic, optical, and mechanical properties of glasses, amorphous semiconductors and metals, sol—gel materials, the liquid state of these solids, and the processes by which they are formed Editor: R.A. Weeks Co-editor: D.L. Kinser Nashville, TN, USA Regional Editors: G. Frischat, Clausthal, Germany G.N. Greaves, Aberystwyth, UK H. Kawazoe, Yokohama, Japan J. Lucas, Rennes, France J.H. Simmons, Gainesville, FL, USA MASTER INDEX VOLS. 181-200 1996 ELSEVIER Amsterdam — Lausanne — New York — Oxford — Shannon — Tokyo Copyright © 1996 Elsevier Science B.V. All rights reserved This journal and the individual contributions contained in it are protected by the copyright of Elsevier Science B.V., and the following terms and conditions apply to their use Photocopying Single photocopies of single articles may be made for personal use as allowed by national copyright laws. 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PRINTED IN THE NETHERLANDS JOURNAL OF Journal of Non-Crystalline Solids 181-200 (1996) 1-65 Author index to Volumes 181—200 Aasland, S., T Grande and S. Julsrud, Adriaenssens, G.J., see Tikhomirov, The influence of oxygen on the oxi- V.K 198-200 (1996) dation state of iron in ZBLAN Adriaenssens, G.J., see Yan, B. 190 (1995) glasses 184 (1995) Adriaenssens, G.J., see Arkhipov, V.1 181 (1995) Aasland, S., T. Grande, A. Grzechnik Aegerter, M.A., see Ziemath, E.C. 194 (1996) and P.F. McMillan, Formation of Afanas’ev, V.V., J.M.M. de Nijs and P fluorozirconate glasses under high Balk, The role of hydrogen in the pressures 195 (1996) action of fluorine in Si/SiO, struc- Aasland, S., see Grande, T 184 (1995) tures 187 (1995) Aassime A., see El-Hdiy, \ 187 (1995) Afanas’ev, V.V., see Druijf, K.G 187 (1995) Abe, Y., see Hosono, H. 190 (1995) Afanas’ev, V.V., see Vanheusden, K 187 (1995) Abe, Y., see Nogami, M. 197 (1996) Affatigato, M., D Osborne and R.F. Achard, P., see Pajonk, G.M. 186 (1995) Haglund Jr., Changes in the surface Acharya, H.N., see Sahu, J 197 (1996) morphology of glass due to abrasion Acharya, K.V., see Murugavel, S 19] (1995) and the deposition of sol—gel thin Achibat, T., see Duval, E 190 (1995) films 181 (1995) Ackerman, W., see Smith, D.M 186 (1995) Agarwal, A., K.M. Davis and M. To- Adachi, H., see Kowada, Y 196 (1996) mozawa, A simple IR spectroscopic Adachi, H., see Kowada, Y. 192 & 193 (1995) method for determining fictive tem Adachi, M., see Dalba, G 192 & 193 (1995) perature of silica glasses 185 (1995) Adam, J.L., M. Matecki and J. Lucas, A ggarwal, I.D., see Jewell, J.M. 188 (1995) Multiphonon relaxations in chloro- Aggarwal, I.D.., see Jewell, J.M. 181 (1995) og fluoride glasses 184 (1995) Agrawal, R.C.., R. Kumar, R.K. Gupta Adam, J.L., see Joubert, M.F 184 (1995) and M. Saleem, [0.75Agl Adam, J.L., see Rigout, N. 184 (1995) 0.25AgCl] quenched system: a better Adkins, B.D., see Brenner, A.M 185 (1995) choice as host compound in place of Adolphi, B., see Alhallani, B. 200 (1996) Agl to prepare Ag* ion conducting Adriaenssens, G., see Lyubin, V 200 (1996) 719 superionic glasses and composites 181 (1995) Adriaenssens, G.J.. A. Gheorghiu, C Aguir, K., see Seguin, J.-L. 183 (1995) Sénémaud, N. Qamhieh, N. Bollé, E. Ahmed, M.S and Y.A. Attia, Aerogel Sleeckx and P. Nagels, Comparison materials for photocatalytic detoxifi- between electrical properties and cation of cyanide wastes in water 186 (1995) electronic structure of variously-pre Ahrens, H., see Wollenhaupt, M. 194 (1996) pared germanium selenide films -200 (1996) Aida, M.S. and R. Bachiri, The surface Adriaenssens, G.J., S.D. Baranovskii, W properties of sputtered amorphous Fuhs, J. Jansen and O. Oktii, Light- silicon thin films 189 (1995) intensity dependence of excess car- Ainslie, B.J., S.T. Davey, D. Szebesta, rier lifetimes ~200 (1996) J.R. Williams, M.W. Moore, T. Adriaenssens, G.J.. see Baranovskii, Whitley and R. Wyatt, A review of S.D 190 (1995) fluoride fibres for optical amplifica- Adriaenssens, G.J., Baranovskii, tion 184 (1995) 225 S.D 190 (1995) 283 Aitken, B.G., see Bartholomew, R.F. 184 (1995) 229 Adriaenssens, G.J., see Baranovskii, Aitken, B.G., see Borrelli, N.F. 185 (1995) 109 S.D. 198—200 (1996) 214 Akai, M., see Shimizu-Iwayama, T. 187 (1995) 112 Adriaenssens, G.J., see Eliat, A 198-200 (1996) 592 Author index to Volumes 18]1—200 Akasaka, T and |. Shimizu, Fabrication discharge silicon—carbon alloys (a- of high-quality poly-Si thin films Si,_ .C,:H) from x=0.5 to 1: A combined with in situ’ real-time comparative study by photoemission spectroscopic ellipsometry 198- 200 (1996) 883 (UPS) and photoluminescence (PL) 198-200 (1996) Akiyama, T , see Tsuji, N 198- 200 (1996) 1034 Alvarez, F., see Comedi, D 198-200 (1996) 198- Akiyama, T., see Tsuji, N 200 (1996) 1054 Alves, O.L.., see Cuevas, R.F 191 (1995) Akkari, F.R., K.H. Cazzini and W. Blau, Alviso, C.T., see Lu, X. 188 (1995) Thermo-optic mode extinction mod- Alviso, C.T., see Pekala, R.W 188 (1995) ulation in polymeric waveguide Amano, M., see Sakata, H. 194 (1996) structures 187 (1995) Amaratunga, G.AJ and S.R.P. Silva, Aksenov, N.D., see Mamedov, S.B 195 (1996) Field emission from a-C:H and a- Al-Alawi, S.M., see Al-Dallal, $ 196 (1996) C:H:N 198-200 (1996) \l-Alawi, S.M., see Al-Dallal, $ 200 (1996) Amista, P., M. Cesari, A. Montenero, G. Al-Dallal, S., S. Arekat, S.M. Al-Alawi, Gnappi and L. Lan, Crystallization S. Aljishi and R. Bannai, Prepara- behaviour in the system MgO- tion, structural and optical properties Al,O,-SiO, 192 & 193 (1995) of novel hydrogenated and fluori- Amov, B., see Balabanov, S. 192 & 193 (1995) nated amorphous silicon—sulfur al- Anderegg, J.W.., see Chang, S.-L. 195 (1996) loys 200 (1996) 1072 Anderson, J., see Hereid, S. 185 (1995) Al-Dallal, S., S.M. Al-Alawi, S. Aljishi, Anderson, J., see Hua, D.W 186 (1995) M. Hamman and S. Arekat, Hydro- Anderson, J.M., see Smith, D.M. 188 (1995) genated amorphous carbon—sulfur Anderson, J.M., see Scherer, G.W. 186 (1995) alloy thin films grown from a CH, Anderson, J.M., see Smith, D.M. 186 (1995) and H,S gas mixture by rf glow Andersson, M.O., A. Lundgren and P. discharge 196 (1996) Lundgren, Surface potential depen- Alaoui, A., see Etienne, P 188 (1995) dence of interface state passivation Alberto, H.V., J.L. Pinto da Cunha, B.O in metal-tunnel oxide—silicon diodes 187 (1995) Mysen, J.M. Gil and N Ayres de Andersson, M.O., see Lundgren, P. 187 (1995) Campos, Analysis of Méssbauer Ando, M., M. Takabatake, E. Nishimura, spectra of silicate glasses using a F. Leblanc, K.-i. Onisawa and T. two-dimensional Gaussian distribu- Minemura, Roles of bonded hydro- tion of hyperfine parameters 194 (1996) gens and oxygen vacancies on crys- Algar, C.D., see Rigden, J.S 190 (1995) tallization of hydrogenated amor- Algar, C.D., see Walters, J.K 197 (1996) phous indium tin oxide (a-ITO:H) Alhallani, B., G. Suchaneck, J. Schmal, films 198-200 (1996) R. Staub, B. Adolphi and K Andreichin, R.E., see Korkinova, Ts.N. 194 (1996) Drescher, Defect density of a-Si:H Andriesh, A.M., N.A. Enachi, LP. films grown at high deposition rates 200 (1996) Culeac, T.N. Copaci and V.A. Alhallani, B., R. Tews, G. Suchaneck, Binchevici, The mechanism of en- S. RGhiecke, A. Kottwitz and K hancement of photoinduced absorp- Schade, Improved quality of high tion in As,S, glass at sub-bandgap leposition rate a-Si:H films prepared illumination 189 (1995) at usual substrate temperature 200 (1996) 1063 Androulidaki, M., see Tzanetakis, P 198-200 (1996) Alhallani, B., see Suchaneck, G 187 (1995) 86 Ang, S.S., see Ranade, R.M 191 (1995) Aljishi, S., see Al-Dallal, S 196 (1996) 168 Angel, P.W., RE Hann and A.R. Aljishi, S., see Al-Dallal, S 198- 200 (1996) 1072 Cooper, Thermal history effects on Alkemper, J., T. Buchholz, K. Mura- electrical relaxation and conductivity kami and L. Ratke, Solidification of for potassium silicate glass with low aluminium alloys in aerogel moulds 186 (1995) alkali concentrations 183 (1995) Almeida, R.M. and P.J. Morais, Prepara- Angell, C.A., see Grande, T 184 (1995) tion and characterization of amor Angelov, Ch., see Balabanov, S 192& 193 (1995) phous ZrF, thin films 184 (1995) Anglaret, E., A. Hasmy, E. Courtens, J Almeida, R.M., see Santos, L.F 184 (1995) Pelous and R. Vacher, Fracton di- Almeida, R.M., see Goncalves, M.C 194 (1996) mension of a mutually self-similar Alvarez, F., P.l. Rovira, M. Bormioli, S series of base-catalyzed aerogels 186 (1995) Souto, L.R Tessler and S.S. Ca- Anglaret, E., J Pelous and L.H margo Jr., Cathodic and anodic glow Hrubesh, Structural changes and Author index to Volumes 181—200 elastic properties in aerogels investi- optical excitations in conjugated gated by Brillouin scattering 186 (1995) polymers 198-200 (1996) Anglaret, E., see Hasmy, A. 186 (1995) Arkhipov, V.I. and G.J. Adriaenssens, Aniya, M., A model for the photo-elec Thermally stimulated currents in tro ionic phenomena in chalcogenide amorphous semiconductors 181 (1995) glasses 198-200 (1996) Arlauskas, K., see JuSka, G. 198-200 (1996) Ankele, J., J. Mayer, P. Lamparter and Armand, P., A. Ibanez, J.M. Tonnerre, S. Steeb, Structure factor of amor- D. Raoux, B. Bouchet-Fabre and E. phous germanium by quantitative Philippot, Correlation between the electron diffraction 192& 193 (1995) structure of (1 — y)GeS, - yAg,S Antonioli, G., see Armelao, L. 192& 193 (1995) glasses and their ionic conductivity 192 & 193 (1995) Antonioli, G., see Manzini, I. 192& 193 (1995) Armelao, L., G. Granozzi, E. Tondello, Antonov, V.E., O.I. Barkalov and E.G. P. Colombo, G. Principi, P.P. Lottici Ponyatovsky, Crystal-to-amorphous and G. Antonioli, Nanocrystalline phase transformation of the Ga—Sb a-Fe,0, sol-gel thin films: a mi- high-pressure phase 192& 193 (1995) crostructural study 192 & 193 (1995) Aoki, K., see Myung, W.-N. 192& 193 (1995) Armstrong, B.M., see Quinn, L.J. 187 (1995) Aoki, Y., see Hattori, R. 198-200 (1996) Armold, R. and H. Solbrig, Scattered- Aoyagi, Y., see Komuro, S. 198-200 (1996) wave supercell approach to the elec- Aoyagi, Y., see O’ Keeffe, P. 198-200 (1996) tronic density of states of topologi- Aoyagi, Y., see Zhao, X. 198-200 (1996) cally disordered metals 189 (1995) Apte, R., see Street, R.A. 198-200 (1996) Aronin, A.S., O.I. Barkalov and E.G. Arai, K., S. Yamasaki, J. Isoya and H. Ponyatovsky, Transmission electron Namikawa, Electron-spin-echo enve- microscopy of Zn,,Sb<s,. quenched lope-modulation study of the dis- high-pressure phase amorphized by tance between Nd** ions and Al** solid-state reaction 189 (1995) 138 ions in the co-doped SiO, glasses 196 (1996) Arsova, D.D., see Skordeva, E.R. 192 & 193 (1995) 665 Arai, K., see Toyoshima, Y. 198-200 (1996) Asahi, N., see Haruyama, O. 192& 193 (1995) 415 Arai, M., A.C. Hannon, T. Otomo, A. Asahi, N., see Haruyama, O. 192& 193 (1995) 451 Hiramatsu and T. Nishijima, Dy- Asal, R., see Gheorghiu, A. 182 (1995) 293 namic correlation function studies of Asami, T., see Onari, S. 198-200 (1996) 700 the medium-range order in materials 192& 193 (1995) 230 Asher, S., see Branz, H.M. 198-200 (1996) 14) Arai, T., see Matsuishi, K 198-200 (1996) 552 Ashida, Y., see Sadamoto, M. 198-200 (1996) 1105 Arai, T., see Onari, S. 198-200 (1996) 700 Ashida, Y., see Saitoh, K. 198-200 (1996) 1093 Arai, T., see Shirai, H. 198-200 (1996) 931 Asokan, S., see Murugavel, S. 191 (1995) 327 Arai, Y., see Ikeo, I. 198-200 (1996) 1109 Assink, R.A., see Loy, D.A. 186 (1995) Arakane, T., see Matsuse, M. 198-200 (1996) 787 Atanassova, E., see Paskaleva, A. 187 (1995) Aranha, N., see Cuevas, R.F. 191 (1995) 107 Attia, Y.A., see Ahmed, MLS. 186 (1995) Araijo, F.G., G.P. LaTorre and L.L. Aubel, D., M. Diani, L. Kubler, J.L Hench, Structural evolution of a Bischoff and D. Bolmont, Selective porous type-VI sol-gel silica glass 185 (1995) 4] thermal — as opposed to non-selec- Araujo, R., Oxygen vacancies in silica tive plasma — nitridation of Si-Ge and germania glasses 197 (1996) 164 related materials examined by in situ Araujo, R.J. and F.P. Fehiner, Sodium photoemission techniques 187 (1995) redistribution between oxide phases 197 (1996) 154 Audino, R., F. Cannistraci, G. Morello Arduini-Schuster, M.C., see Kuhn, J. 186 (1995) 184 and P. Valenti, PECVD a-SiN,:H Arduini-Schuster, M.C., see Kuhn, J. 186 (1995) 291 films for dielectric insulation in Arekat, S., see Al-Dallal, S. 196 (1996) 168 buried ridge structure Fabry—Perot Arekat, S., see Al-Dallal, S. 198-200 (1996) 1072 and distributed feedback laser de- Aristov, Yu.1., see Jarzebski, A.B. 190 (1995) 198 vices 187 (1995) Arkhipov, V.I. and H. Bassler, Charge Autran, J.-L., B. Balland and D. Babot, carrier transport in diluted hopping Three-level charge pumping study of systems 198-200 (1996) radiation-induced defects at Si-SiO, Arkhipov, V.L, H. Bassler, M. Deussen, interface in submicrometer MOS E.O. Gobel, U. Lemmer and R.F. transistors 187 (1995) Mahrt, Field-induced dissociation of Author index to Volumes 18]—200 J.-L., C. Plossu, F. Seigneur, B Balk, P., see Afanas’ev, V.V 187 (1995) Balland and A. Straboni, A compari Balk, P.. see Druijf, K.G 187 (1995) of S10, interface trap prop 3alkanski, M., see Massot, M 182 (1995) thin-film transistors with Balland, B., see Autran, J.-I 187 (1995) al and plasma nitrided oxides 1995) Balland, B., see Autran, J.-I 187 (1995) and Y.H. Chen Multiphonon Bancroft, G.M., see Li, D 188 (1995) ZBLAN bulk and Banerjee, A., see Lucovsky, G 200 (1996) for the photon Banki, P., see Pécsik, | 200 (1996) 1995) Bannai, R., see Al-Dallal, S$ 200 (1996) 1995) Bao, S., PJ. Newman, A. Voelkel, Z » Santa-Cruz, P 995) Zhou and D.R. MacFarlane, Electro see Ribeiro, S_J.I 1996) chemical purification and GFAAS see Tourtin, I 1995) analysis of heavy metal fluoride glass 184 (1995) l. and V Tonchey Kinetics Baranovskii, S.D. and P. Thomas, Non structural relaxation in a con linear hopping transport in band tails 200 (1996) trained dynamics system 1996) Baranovskii, S.D., F. Hensel, K. Ruckes, M.R., see Hunt, A.J 1995) P. Thomas and G.J. Adriaenssens, le Campos, N., see Alberto, H.V 1996) Potential fluctuations in amorphous M Tr. Yokoi and |. Shimizu, silicon 190 (1995) proved stability of a-Si:H fabri Baranovskii, S.D., P Thomas and G.J ited from SiH,Cl, by ECR hydro Adriaenssens, The concept of trans 200 (1996) port energy and its application to Steady-state photoconductivity in Matsuyama, 1 200 (1996) amorphous silicon 190 (1995) Autran, J.-I 187 (1995) Baranovskii, $.D., T. Faber, I Hensel Aida, M.S 189 (1995) and P. Thomas, On the description see Vedishcheva M 193 (1995) of hopping-energy relaxation and see Hwang, C.-S 200 (1996) transport in disordered systems 200 (1996) M. Barrada B. Lep Baranovskii, $.D., T. Faber, F Hensel, Schoonman, P. Thomas and GJ Adriaenssens, u/Bn/InP Einstein’s relationship for hopping MIS diode 1995) electrons 200 (1996) S.. L. Gutman and M. Silbert Baranovskii, S.D Adriaenssens, hastic models of local structures G.J 200 (1996) rlodal atomic contigurations 1995) Barbosa, L.C., see Cuevas, R.I 191 (1995) M.V N.N. Faleev rt Barczynski, R.J., see Murawski, | 196 (1996) ind E.A Smorgonskaya Barczynski, R.J., see Murawski, | 185 (1995) medium-ra we order in Bardet, E., J.E. Bourée, M. Cuniot, J chaico Dixmier, P. Elkaim, J. Le Duigou, 193 995) A.R. Middya and J. Perrin, The grain A.S.. V.V. Kul’ko, LM. Mikhai size in microcrystalline silicon: cor k V.B. Rabukhin and O.A relation between atomic force mi kodnaya, Field-emission mi croscopy, UV reflectometry, ellip opy of amorphous CoSi alloy sometry, and X-ray diffractometry 200 (1996) 867 S., T. Tsvetkova, K. Nanev Baribeau, J.M., see Laaziri, K 191 (1995) 193 I Skordeva, Ts. Marinova, V. Kras Barkalov, O.1.. LT. Belash, Al B. Amov and Ch. Angelov, For Kolesnikov and Yu.M. Ostanevich, ym OF CarDdDon aggregates in ion Globular germanium precipitation mplanted amorphous As—Se from supersaturated Al(Ge) solid so subramanian, S. and K.J. Rao lutions prepared by _ thermobaric nolecular dj ynamics a\ ”% the treatments 193 (1995) 486 uxed alkali effect in silicate glasses 181 (1995) Barkalov, O.1., see Aronin, A.S 189 (1995) 138 Bi see Lubianiker, Y 198 200 (1996) Barkalov, O.1., see Antonov, V.I 193 (1995) 443 Ba see Lubianiker, Y 198 200 (1996) Barner, K., see Wollenhaupt, M 194 (1996) 19] Ba see Morell, G 194 (1996) Barnes, A.V , see Morimoto, Y 196 (1996) 106 Balk P., Dielectrics in microelectronics Barrada, M see Baehr, O 187 (1995) 409 problems and perspectives 187 (1995)