Journal of Luminescence 1993: Vol 57 Index

5 Pages·1993·1 MB·English

Journal of Luminescence 57 (1993) 351-354 LUMINESCENCE
North-Holland
Author index
Abraham, P., see Sacilotti, M. 57 (1993) Calliari, L. M. Anderle, M. Ceschini,
Afanasiev, M., see Laiho, R. 57 (1993) L. Pavesi, G. Mariotto and O. Bisi, Electron
Albu-Yaron, A., S. Bastide, J.L. Maurice and bombardment effects on light emitting por-
C. Lévy-Clement, Morphology of porous ous silicon (1993) 83
n-type silicon obtained by photo- Camassel, J., see Massone, E. (1993)
electrochemical etching II. Study of the tan- Canham, L.T., see Calcott, P.D.J. (1993)
gled Si in the nanoporous layer (1993) Ceschini, M., see Calliari, L. (1993)
Allan, G., C. Delerue and M. Lannoo, Ex- Ceschini, M., see Pavesi, L. (1993)
citons in silicon nanostructures (1993) Chamarro, M., see Grosman, A. (1993)
Allan, G., see Lannoo, M. (1993) Chamarro, M., see von Bardeleben, HJ. (1993)
Allan, G., see Delerue, C. (1993) Chamarro, M., see Morazzani, V. (1993)
Ambacher, O., see Riickschloss, M. (1993) Champagnon, B., see Sacilotti, M. (1993)
Anderle, M., see Calliari, L. (1993) Champagnon, B., see Gregora, I. (1993)
Auderset, H., see Steigmeier, E.F. (1993) Chazalviel, J.-N., see Dubin, V.M. 7 (1993)
Badoz, P.A., see Vincent, G. (1993) Deak, P., see Stutzmann, M. (1993) 32
Baier, T., see Mauckner, G. (1993) Delerue, C., see Allan, G. (1993)
Bastide, S., see Albu-Yaron, A. (1993) Delerue, C., see Lannoo, M. (1993)
Bauhofer, W., see Riiter, D. (1993) Delerue, C., M. Lannoo and G. Allan, Theory
Behm, R.J., see Mauckner, G. 57 (1993) of the luminescence of porous silicon (Jn-
Ben Chorin, M., F. Méller and F. Koch, AC vited paper) (1993)
conductivity in porous silicon 57 (1993) Delley, B., see Steigmeier, E.F. (1993)
Berger, M.G., see Miinder, H. 57 (1993) Di Francia, G., P. Menna and M. Falconieri,
Binder, M., see Metzger, H. 57 (1993) Effect of substrate roughness on porous sili-
Bisi, O., see Calliari, L. 57 (1993) con light emission (1993)
Bomchil, G., see Goudeau, Ph. Diaz Calleja, R., see Matveeva, E. (1993)
Bondarenko, V.P., see Zuk, J. Donegan, J.F., see Xing, J. (1993)
Bouix, J., see Sacilotti, M. Dorofeev, A.M., see Zuk, J. (1993)
Brandt, M.S., see Stutzmann, M. 57 (1993) Dubin, V.M., J.-N. Chazalviel and F. Ozanam,
Brumhead, D., see Calcott, P.D.J. 57 (1993) In situ. photoluminescence and photo-
Bsiesy, A., F. Muller, 1. Mihalcescu, M. modulated infrared study of porous silicon
Ligeon, F. Gaspard, R. Herino, R. Romes- during etching and in ambient
tain and J.C. Vial, Electrically induced Dumas, Ph., see Gu, M.
selective quenching of porous silicon photo-
luminescence 57 (1993) Emanuelsson, P., see Meyer, B.K
Bsiesy, A., see Muller, F. 57 (1993) Enachescu, M., E. Hartmann, A. Kux and F.
Bustarret, E., 1. Mihalcescu, M. Ligeon, R. Koch, Surface structure imaging, electroni-
Romestain, J.C. Vial and F. Madéore, Com- cally induced modifications, and electro-
parison of room temperature photo- luminescence of porous silicon by scanning
luminescence decays in anodically oxidized tunneling microscopy
crystalline and X-ray-amorphous porous
silicon 57 (1993)
Falconieri, M., see Di Francia, G.
Finkbeiner, S., see Rosenbauer, M.
Calcott, P.D.J., K.J. Nash, L.T. Canham, M.J. Finkbeiner, S., J. Weber, M. Rosenbauer and
Kane and D. Brumhead, Spectroscopic M. Stutzmann, Transient photolumines-
identification of the luminescence mechan- cence decay in porous silicon and siloxene
ism of highly porous silicon (Invited paper) 57 (1993) 257 Finkbeiner, S., see Stutzmann, M.
352 Author index
Fishman, G., R. Romestain and J.C. Vial, Ex- Jalsovszky, G., see Vazsonyi, E.B. 57 (1993)
perimental and theoretical aspects of radi- Jeske, M., see Miinder, H. 57 (1993)
ative processes in porous silicon 57 (1993) 235
Foucaran, A., see Massone, E. 57 (1993) 51 Kane, M.J., see Calcott, P.D_J. 57 (1993)
Franz, H., see Metzger, H. 57 (1993) 201 Kaneko, H., P.J. French and R.F. Wolffenbut-
French, P.J., see Kaneko, H. 57 (1993) 101 tel, Photo- and electro-luminescence from
Frohnhoff, S., see Miinder, H. 57 (1993) porous Si 57 (1993)
Fuchs, H.D., see Rosenbauer, M. 57 (1993) Kessener, Y.A.R.R.. G.L.J.A. Rikken and
Fuchs, H.D., see Stutzmann, M. 57 (1993) A.H.J. Venhuizen, Quenching of porous sili-
con luminescence at intermediate temper-
Galun, E., R. Tenne, A. Lagoubi and C. Levy- atures 57 (1993)
Clément, Room temperature photolumines- Kessener, Y.A.R.R., see Pulsford, N.J. 57 (1993)
cence of photoelectrochemically etched Koch, F., see Meyer, B.K. 57 (1993)
n-type Si 57 (1993) Koch, F., see Ben Chorin, M. 57 (1993)
Gaspard, F., see Bsiesy, A. 57 (1993) Koch, F., see Enachescu, M. 57 (1993)
Gaspard, F., see Muller, F. 57 (1993) Koch, F., V. Petrova-Koch and T. Muschik,
Goudeau, Ph., A. Naudon, A. Halimaoui and The luminescence of porous Si: the case for
G. Bomchil, SAXS study of the influence of the surface state mechanism (Invited paper) 57 (1993)
the porous silicon morphology on the Koés, M., see Vazsonyi, E.B. 57 (1993)
photoluminescence efficiency 57 (1993) Koshida, N., see Koyama, H. 57 (1993)
Gregora, I., B.C hampagnon and A. Halimaoui, Koyama, H. and N. Koshida, Electrical prop-
Nanocrystallites in luminescent porous sili- erties of luminescent porous silicon (Invited
con characterized by Raman scattering 57 (1993) paper) 57 (1993)
Grosman, A., M. Chamarro, V. Morazzani, Kozlowski, F., P. Steiner and W. Lang,
C. Ortega, S. Rigo, J. Siejka and H.J. von A model for the electroluminescence of por-
Bardeleben, Study of anodic oxidation of ous n-silicon 57 (1993)
porous silicon: relation between growth and Kozlowski, F., see Lang, W. 57 (1993)
physical properties 57 (1993) Kozlowski, F., P. Steiner, M. Sauter and W.
Grosman, A., see von Bardeleben, H.J. 57 (1993) Lang, Ultraviolet light from porous silicon
Grosman, A., see Morazzani, V. 57 (1993) by a microscopic discharge 57 (1993)
Grosman, A., see von Bardeleben, H.J. 57 (1993) Kozlowski, F., see Lang, W. 57 (1993)
Gu, M., C. Syrykh, A. Halimaoui, Ph. Dumas Kuduk, R., see Zuk, J. 57 (1993)
and F. Salvan, Low-energy scanning cath- Kulik, M., see Zuk, J. 57 (1993)
odoluminescence spectroscopy and micro- Kux, A., see Enachescu, M. 57 (1993)
scopy of porous silicon layers (Invited paper) 57 (1993)
Gwilliam, R.M., see Hunt, T.D. 57 (1993) Lagoubi, A., see Galun, E. 57 (1993)
Lahderanta, E., see Laiho, R. 57 (1993)
Halimaoui, A., see Gregora, I. 57 (1993) Laiho, R., A. Pavlov and T. Tsuboi, Time-
Halimaoui, A., see Goudeau, Ph. 57 (1993) resolved photoluminescence spectroscopy
Halimaoui, A., see Vincent, G. 57 (1993) of porous silicon 57 (1993)
Halimaoui, A., see Gu, M. 57 (1993) Laiho, R., E. Lahderanta, L. Vlasenko, M.
Hartmann, E., see Enachescu, M. 57 (1993) Viasenko and M. Afanasiev, Magnetic
Hegarty, J., see Xing, J. 57 (1993) properties of light-emitting porous silicon 57 (1993)
Herino, R., see Bsiesy, A. 57 (1993) Lang, W., see Kozlowski, F. 57 (1993)
Herino, R., see Muller, F. 57 (1993) Lang, W., P. Steiner, F. Kozlowski and H.
Hiraki, A., see Ito, T. 57 (1993) Sandmaier, Porous silicon light-emitting
Hofmann, D.M., see Meyer, B.K. 57 (1993) p-n junction 57 (1993) 169
Homewood, K.P., see Hunt, T.D. 57 (1993) Lang, W., see Kozlowski, F. 57 (1993) 185
Houbertz, R., see Mauckner, G. 57 (1993) Lang, W., P. Steiner and F. Kozlowski, Por-
Hunt, T.D., K.J. Reeson, R.M. Gwilliam, K.P. ous silicon electroluminescent devices (In-
Homewood, R.J. Wilson and B.J. Sealy, In- vited paper) 57 (1993) 341
vestigation of the luminescence properties Lannoo, M., see Allan, G. 57 (1993) 239
of Si/BFeSi,/Si heterojunction structures Lannoo, M., C. Delerue and G. Allan, Non-
fabricated by ion beam synthesis 57 (1993) radiative recombination on dangling bonds
in silicon crystallites 57 (1993) 243
Ito, T. and A. Hiraki, Aging phenomena of Lannoo, M., see Delerue, C. 57 (1993) 249
light emitting porous silicon (Invited paper) 57 (1993) 331 Leblanc, F., see Vincent, G. 57 (1993) 217
Author index
Levy-Clement, C., see Albu-Yaron, A. 57 (1993) Muller, F., R. Herino, M. Ligeon, F. Gaspard,
Levy-Clément, C.., see Galun, E. 57 (1993) R. Romestain, J.C. Vial and A. Bsiesy,
Ligeon, M., see Bsiesy, A. 57 (1993) Photoluminescence and _ electrolumines-
Ligeon, M., see Bustarret, E. 57 (1993) cence from electrochemically oxidized por-
Ligeon, M., see Mihalcescu, I. 57 (1993) ous silicon layers (Invited paper) 57 (1993) 283
Ligeon, M., see Muller, F. 57 (1993) Minder, H., M.G. Berger, S. Frohnhoff,
Liskiewicz, J., see Zuk, J. 57 (1993) M. Tho6nissen and H. Lith, A non-destruc-
Lous, E.J., see Pulsford, N.J. 57 (1993) tive study of the microscopic structure of
Lith, H., see Miinder, H. 57 (1993) porous Si 57 (1993) 5
Miinder, H., see Rossow, U. 57 (1993) 205
Minder, H., M.G. Berger, S. Frohnhoff,
Maczka, D., see Zuk, J. 57 (1993) M. Thonissen, H. Liith, M. Jeske and J.W.
Madéore, F., see Bustarret, E. 57 (1993) Schultze, Investigation of different oxida-
Mariotto, G., see Calliari, L. 57 (1993) tion processes for porous Si by XPS 57 (1993) 223
Martinez-Duart, J.M., see Matveeva, E. 57 (1993) Muschik, T., see Koch, F. 57 (1993) 271
Massone, E., A. Foucaran and J. Camassel,
Optical investigation of porous silicon Nash, K.J., see Calcott, P.D_J. 57 (1993) 257
membranes 57 (1993) Naudon, A., see Goudeau, Ph. 57 (1993)
Matveeva, E., V.P. Parkhutik, R. Diaz Calleja
and J.M. Martinez-Duart, Growth of poly- Omling, P., see Meyer, B.K. 57 (1993)
aniline films on porous silicon layers 57 (1993) Ortega, C., see Grosman, A. 57 (1993)
Mauckner, G., T. Walter, T. Baier, K. Thonke, Ortega, C., see von Bardeleben, HJ. 57 (1993)
R. Sauer, R. Houbertz, U. Memmert and Ortega, C., see Morazzani, V. 57 (1993)
R.J. Behm, Luminescence properties and Ortega, C., see von Bardeleben, H.J. 57 (1993)
surface topography of porous silicon 57 (1993) Ozanam, F., see Dubin, V.M. 57 (1993)
Maurice, J.L., see Albu-Yaron, A. 57 (1993)
Memmert, U., see Mauckner, G. 57 (1993) Parkhutik, V.P., see Matveeva, E. 57 (1993)
Menna, P., see Di Francia, G. 57 (1993) Pavesi, L., see Calliari, L. 57 (1993)
Metzger, H., H. Franz, M. Binder, J. Peis! and Pavesi, L., M. Ceschini and F. Rossi, Photo-
V. Petrova-Koch, X-ray investigation of luminescence of porous silicon 57 (1993)
porous silicon under angles of grazing inci- Pavesi, L., see Pivac, B. 57 (1993)
dence and exit 57 (1993) Pavlov, A., see Laiho, R. 57 (1993)
Meyer, B.K., D.M. Hofmann, W. Stadler, V. Peisl, J., see Metzger, H. 57 (1993)
Petrova-Koch, F. Koch, P. Emanuelsson Petrova-Koch, V., see Meyer, B.K. 57 (1993)
and P. Omling, Photoluminescence and op- Petrova-Koch, V., see Metzger, H. 57 (1993)
tically detected magnetic resonance invest- Petrova-Koch, V., see Koch, F. 57 (1993)
igations on porous silicon 57 (1993) Pivac, B., B. Rakvin and L. Pavesi, Radiation
Mihalcescu, I., see Bsiesy, A. 57 (1993) effects on porous silicon 57 (1993)
Mihalcescu, I., see Bustarret, E. 57 (1993) Pocsik, I., see Vazsonyi, E.B. 57 (1993)
Mihalcescu, I, M. Ligeon, F. Muller, R. Polateglou, H.M., Optical properties of H ter-
Romestain and J.C. Vial, Surface passiva- minated Si quantum wires 57 (1993)
tion: a critical parameter for the visible Pulsford, N.J.. G.L.J.A. Rikken, Y.A.R.R.
luminescence of electrooxidised porous Kessener, E.J. Lous and A.H.J. Venhuizen,
silicon 57 (1993) Carrier injection and transport in porous
Moller, F., see Ben Chorin, M. 57 (1993) silicon Schottky diodes 57 (1993)
Monteil, Y., see Sacilotti, M. 57 (1993)
Morazzani, V., see Grosman, A. 57 (1993) Rakvin, B., see Pivac, B. 57 (1993)
Morazzani, V., see von Bardeleben, H.J. 57 (1993) Reeson, K.J., see Hunt, T.D. 57 (1993)
Morazzani, V., M. Chamarro, A. Grosman, C. Rigo, S., see Grosman, A. 57 (1993)
Ortega, S. Rigo, J. Siejka and H.J. von Bar- Rigo, S., see von Bardeleben, H.J. 57 (1993)
deleben, Partial oxidation of porous silicon Rigo, S., see Morazzani, V. 57 (1993)
by thermal process: study of structure and Rikken, G.L.J.A., see Kessener, Y.A.R.R. 57 (1993)
electronic defects 57 (1993) 45 Rikken, G.L.J.A., see Pulsford, NJ. 57 (1993)
Morazzani, V., see von Bardeleben, H_J. 57 (1993) 301 Romestain, R., see Bsiesy, A. 57 (1993)
Morf, R., see Steigmeier, E.F. 57 (1993) 9 Romestain, R., see Bustarret, E. 57 (1993)
Muller, F., see Bsiesy, A. 57 (1993) 29 Romestain, R., see Mihalcescu, I. 57 (1993) 111
Muller, F., see Mihalcescu, I. 57 (1993) 111 Romestain, R., see Fishman, G. 57 (1993) 235
354 Author index
Romestain, R., see Muller, F. 57 (1993) 283 Thénissen, M., see Rossow, U. 57 (1993) 205
Rosenbauer, M., M. Stutzmann, H.D. Fuchs, ThGnissen, M., see Miinder, H. 57 (1993) 223
S. Finkbeiner and J. Weber, Temperature Thonke, K., see Mauckner, G. 57 (1993) 211
dependence of luminescence in porous sili- Tsuboi, T., see Laiho, R. 57 (1993) 89
con and related materials 57 (1993) 153
Rosenbauer, M., see Finkbeiner, S. 57 (1993) 231 Vazsonyi, E.B., M. Koés, G. Jalsovszky and I.
Rosenbauer, M., see Stutzmann, M. 57 (1993) 321 Pocsik, The role of hydrogen in lumines-
Rossi, F., see Pavesi, L. 57 (1993) 131 cence of electrochemically oxidized porous
Rossow, U., H. Miinder, M. Thénissen and W. Si layer 57 (1993)
TheiB, Characterisation of porous silicon Venhuizen, A.H.J., see Kessener, Y.A.R.R. 57 (1993)
layers by spectroscopic ellipsometry 57 (1993) 205 Venhuizen, A.H.J., see Pulsford, NJ. 57 (1993)
Riickschloss, M.,O. Ambacher and S. Veprek, Veprek, S., see Riickschloss, M. 57 (1993)
Structural aspects of light emitting nc-Si Vial, J.C., see Bsiesy, A. 57 (1993)
prepared by plasma CVD 57 (1993) 1 Vial, J.C., see Bustarret, E. 57 (1993)
Ritter, D. and W. Bauhofer, Preparation of Vial, J.C., see Mihalcescu, I. 57 (1993)
porous silicon by spark erosion 57 (1993) 19 Vial, J.C., see Fishman, G. 57 (1993)
Vial, J.C., see Muller, F. 57 (1993)
Sacilotti, M., B. Champagnon, P. Abraham, Vincent, G., F. Leblanc, I. Sagnes, P.A. Badoz
Y. Monteil and J. Bouix, Properties of type and A. Halimaoui, Investigation of optical
II interfaces in semiconductor heterojunc- properties of free-standing porous silicon
tions, application to porous silicon 57 (1993) 33 films by absorption and mirage effect 57 (1993)
Sagnes, I., see Vincent, G. 57 (1993) 217 Vlasenko, L., see Laiho, R. 57 (1993)
Salvan, F., see Gu, M. 57 (1993) 315 Vlasenko, M., see Laiho, R. 57 (1993)
Sandmaier, H., see Lang, W. 57 (1993) 169 von Bardeleben, H.J., see Grosman, A. 57 (1993)
Sauer, R., see Mauckner, G. 57 (1993) 211 von Bardeleben, H.J., M. Chamarro, A. Gros-
Sauter, M., see Kozlowski, F. 57 (1993) 185 man, V. Morazzani, C. Ortega, J. Siejka and
Schultze, J.W., see Miinder, H. 57 (1993) 223 S. Rigo, Pb-defects and visible photo-
Sealy, B.J., see Hunt, T.D. 57 (1993) 25 luminescence in porous silicon 57 (1993)
Siejka, J., see Grosman, A. 57 (1993) 13 von Bardeleben, H.J., see Morazzani, V. 57 (1993)
Siejka, J., see von Bardeleben, H.J. 57 (1993) 39 von Bardeleben, H.J., C. Ortega, A. Grosman,
Siejka, J., see Morazzani, V. 57 (1993) 45 V. Morazzani, J. Siejka and D. Stievenard,
Siejka, J., see von Bardeleben, H.J. 57 (1993) 301 Defect and structure analysis of n*-, p*-
Stadler, W., see Meyer, B.K. 57 (1993) 137 and p-type porous silicon by the electron
Steigmeier, E.F., H. Auderset, B. Delley and paramagnetic resonance technique (Invited
R. Morf, Visible light emission from Si paper) 57 (1993)
materials 57 (1993) 9
Steiner, P., see Kozlowski, F. 57 (1993) 163
Walter, T., see Mauckner, G. 57 (1993)
Steiner, P., see Lang, W. 57 (1993) 169
Steiner, P., see Kozlowski, F. 57 (1993) 185 Weber, J., see Rosenbauer, M. 57 (1993)
Weber, J., see Finkbeiner, S. 57 (1993)
Steiner, P., see Lang, W. 57 (1993) 341
Stelmakh, V.F., see Zuk, J. 57 (1993) 57 Weber, J., see Stutzmann, M. 57 (1993)
Wilson, R.J., see Hunt, T.D. 57 (1993)
Stievenard, D., see von Bardeleben, H.J. 57 (1993) 301
Wolffenbuttel, R.F., see Kaneko, H. 57 (1993)
Stutzmann, M., see Rosenbauer, M. 57 (1993) 153
Stutzmann, M., see Finkbeiner, S. 57 (1993) 231
Stutzmann, M., M.S. Brandt, M. Rosenbauer, Xing, J., J.F. Donegan and J. Hegarty, A fluor-
H.D. Fuchs, S. Finkbeiner, J. Weber and P. escence-line-narrowing study of the broad
Deak, Luminescence and optical properties porous-silicon luminescence band 57 (1993)
of siloxene (Invited paper) 57 (1993) 321
Syrykh, C., see Gu, M. 57 (1993) 315 Zhukovski, P.V., see Zuk, J. 57 (1993)
Zuk, J., R. Kuduk, M. Kulik, J. Liskiewicz, D.
Tenne, R., see Galun, E. 57 (1993) 125 Maczka, P.V. Zhukovski, V.F. Stelmakh,
TheiB, W., see Rossow, U. 57 (1993) 205 V.P. Bondarenko and A.M. Dorofeev,
Tho6nissen, M., see Miinder, H. 57 (1993) 5 Ionoluminescence of porous silicon 57 (1993)
wees
Journal of Luminescence 57 (1993) 355 (LUMINESCENCE
Subject index
Absorption 217 Passivation 111
Aging 331 Photoconductivity 293
Anodic oxidation 13, 111, 121, 283 Photoluminescence 1, 9, 19, 25, 39, 45, 77, 89, 95, 101, 105, 125,
131, 137, 153, 211, 231, 271, 283, 321, 331
Carrier injection 181 ~ infrared spectroscopy 61
Cathodoluminescence 191, 315 ~ quenching 29, 293
Conductivity 159, 181, 293 ~ transmission 51
Plasma CVD 1
Decay time 89, 105, 1i1, 211, 231
Electrochemistry 67, 175 Quantum dot 235
Electroluminescence 101, 163, 169, 283, 341
Electron irradiation 83 Radiative processes 235, 257
Electron paramagnetic resonance (EPR) 13, 39, 45, 197, 227, Raman spectroscopy 5, 9, 73
301 Roughness 95
Ellipsometry 205 Rutherford backscattering spectroscopy (RBS) 45
Exchange splitting 235
Exciton 239
Scanning tunneling microscopy (STM) 191, 211, 315
Ferromagnetism 197 Spark erosion 9, 19
Fluorescence line narrowing 147, 257 Spectroscopy
— excitation 131
In situ measurements 61 — infrared 121
lonoluminescence 57 Surface states 271
Irradiation 227
Temperature dependence 77, 153
Luminescence
Thermal oxidation 45
— ultraviolet 185
Tight-binding calculation 117, 239, 249
Transmission electron microscopy 67
Mirage effect 217
Type Il interface 33
Non-radiative processes 243
X-ray diffraction 201
Optically detected magnetic resonance (ODMR) 137, 321 X-ray photoemission (XPS) 223
Oxidation 223 X-ray scattering 141