Table Of Content

Indexes to Journal of ELECTRONIC MATERIALS Vol. 31, January-December 2002 Author Index A Boettinger, W.J.. (5) 545 Cho, C.-L.. . (5)520 Bohm, J.. (1)45 Choi, H.J. . (3)209 Abernathy, C.R. .... (5) 336, (5) 411, Boieriu, P. . (7) 694 Choi, S.. . (4)292,(9)946 (5)437 Bok, K.-S.. (5) 520 Choi, W.K.. (11) 1283, (11) 1292 Adetunji, 0.0.. (7) 795, (7) 802 Bornfreund, R.E.. (7) 815 Choi, W.-S. . (5)520 Agarwal, A. . (10)999 Bourdelle, K.K.. (10) 999 Chou, D.-W. . (1)71 Agarwal, S.K.. (3) 234 Boyd, I.W.. (12) 1325 Chou, H.W. . (2) 129 Agata, Y..H (7) 785 Boyd,P.R.. (7)749,(7)822 Chow, P.P. . (4)437 Ager, J.W.. (7)754 Brandes, G.R.. (5) 402 Chow, T.P. . (5)356 Agraharam, S.. (10) 1096 Broitman, E.. (9) Lll Chowdhurv, U. . (5)406 Ahat, S.. (2) 136 Brown, A.S.. (2) 95, (8) 841 Choy, J.-H. .. . (10)988 Ahlgren, W.L.. (3) 220 Brunell, I.. (9) Lll Chsherbatchev, K.D. (5) 384 Alam, A.. (12) 1321 Bublik, V.T..^.1 (5) 384 Chu, M.... . (7)720 Alam, M.O.. (10) 1117 Buell, A.A.. (7) 815 Chu, S.N.G. . (5)336,(5)411 Allen, S.. (2) 161 Burger, A.. (7)791,(7)795, Chuang, T.H. (3) 171,(5)488, Allums, K.K.. (5) 437 (7)802 (5) 494, (6) 640 Almeida, L.A.. (7) 660, (7) 669, Busbee, J.D.. (10) 1112 Chugh, R. . (5)535 (7)732,(7)822 Chung, C.L.. . (11)1203 Alok, D.. (5) 356 C Chung, D.D.L. (5)535,(6)646, Al-Shareef, H.N. . (2) 124 (9)933 An, S.Y.. (7)683 Cabral, C., Jr.. (6) 597 Chung, K.H. . (6)610 Anderson, I.E. (11) 1166, (11) 1190 Cai, X.. (5) 449 Chung, M.-S. . (5) 500 Anderson, W.A. .... . (5)466 Capano, M.. (5) 335 Clarke, R.D. . . (5)346 Antoszewski, J. .... .. (7)652,(7)743 Carius, R.. (12) 1321 Conrad, H.. . (4)305 Aqariden, F. .. . (7)715 Carrig, T.J.. (7) 759 Contestable-Gilkes, D. (10) 1047 Arias, J.M. . (7)726 Carter, C.H., Jr.. (5) 366 Cook, B.A.. (11)1166,(11)1190 Arnold, E. . (5)356 Chada, S.. (11) 1129 Craciun, V. . (12)1325 Arra, M. . (11)1130 Chae, G.S. . (8) 857 Creighton, J.R. . (12)1337 Arthur, S.D. .. (5)370,(7)827 Chaldyshev, V.V. . (6) 631 Cui, Y.. . (7)791,(7)795 Arzt, E. .. . . (1)45 Chan, Y.C.. (10 1117 Augur, R.A. . (1) 10,(10) 1004 Chandra, A..... (10) 1022, (10) 1066 D Aumer, M.E. . (DLl Chandra, D.. (7) 715 Ayyildiz, E.. . (2)119 Chang, C.M.. (8) 895 d’Heurle, F.M. . (6) 597 Chang, C.-N. . (12)1341 D’Souza, A.I. . (7)699,(7)726 B Chang, H.-S.. (11) 1203 Dabiran, A.M. . (5)437 Chang, S.Y.. (6) 640 Davis, R.F. . (5)421 Bac, A.G.. . (5)437 Chang, T.C.. (5) 500 de Bruin, J.B. . (3) 220 Bahr, D.F. . (1)66 Chang, Y.A.. (12) 1330 de Lyon, T.J. . (3)220,(7)688 Bai, L.. . (7)770 Chattopadhyay, K.. (7) 802 Dean, N.F. . (11)1244 Bailey, S.L.. . (7)688 Chatty, K.. (5) 356 Dell, J.M.... . . (7)651,(7)743 Bajaj, J. . . (7)726 Chaurasia, A.R.. (1) L7 Denyszyn, J.C.. . (5)406 Bakhru, H. . . (8)848 Chawda, S.G. . (10) 999 Derenge, M.A.. . (6) 568 Balakrisnan, B..... . (11)1256 Chen, C.C.. (2) 129 Desalvo, G.. . (5)346 Balasubramanian, T.. (12)1353 Chen, C.-Y.. (2) 129 Dewames, R.E. . (7)699,(7)726 Balk, T.J... . (1)45 Chen, K.C.. (11) 1181 Dhanasekaran, R. . (3)227 Bando, Y. . (5)391 Chen, K.-I.. (8) 861 Dhar, N.K.. . (7)651 Baneriee, S. . (3)214 Chen, K.-T.. (7) 791 Dieng, L.M. . . (10)1074 Barnat, E. . (8)848 Chen, S.-W.. (2) 152, (9) 907 Dinan, J.H. (7) 669,(7)705, Barnett, C.... . . (7)791 Chen, W.T. . (11) 1256 (7) 732,(7) 749,(7)822 Bastawros, A. . (10)1022 Chen, Y.. (7)694 Dozsa, L. . . . (2)113 Bedair, S.M. . (DLl Chen, Z.. (6) 564 Dravin, V.A. . (5)384 Beeman, J.W. . (7)754 Chen, Z.G.. (10) 1122 Dresselhaus, M.S.. . (4)298 Belas, E. . (7)738 Cheng, L.. (5) 361 Drexler, E.S.... . . (4)286 Benson, J.D. , (7)669,(7)732, Cheng, M.D.. (3) 171 Duh, J.-G. . (11)1230 (7) 749, (7) 822 Cheng, S.C.. (9) 940 Dupuis, R.D.. . (5)335,(5)406 Bhusari, D.. . (10)1080 Cheng, W.H.. (3) 178, (8) 895 Dusch, B.P. . (10)1080 Biber, M.. . (12)1362 Cheng, Z.. (5) 449 Dutta, 1.. . (4)253 Bidstrup Allen, S.A.. (10) 1096 Chi, C.-S.. (11) 1203 Dwivedi, R. . (5)437 Bieler, T.R. (4)292,(9)946, Chiang, H.-C.. (12) 1341 (11)1152 Chinthakindi, A.K.. (10) 1080 E Bielmann, M. .. (12)1316 Chiou, B.-S.. (1)82,(5)472 Biller, B.C. . (5)535 Chirila, M.. (7) 770 Edwall, D.D. . (7) 726, (7) 664, Bilyk, M. . . (8)831 Chiu, M.Y.. (5) 494 (7)669 Blaschke, V.A. . (10)1052 Chiu, S.K.. (3) 178 Einfeldt, S.. . (5)421 Bluiett, A.G. . (7)806 Cho, B.S.. (6)610,(8)857 Eisenbach. A. . (5)395 1369 1370 Eldridge, G.. (5) 346 Grief, M. . (10)1059 Hutin, O.. (11) 1270 Emanetoglu, N.W.. (7) 811 Grigorov, S.N. . (4)298 Hwang, S.-Y.. (11) 1304 Emirov, Y.. (5) 380 Grill, R.. . (7)738 Erickson, J.W.. (5) 506 Grillot, P.N. . (2) 99 I Ervin, M.H.. (6) 568 Grdning, P. . (12)1316 Eyink, K.G.. (10) 1112 Grow, J. . (10)1074 Ichimura, S. ... (2) 108 Gu, Y. . (7)799 Ingerly, D.. (12)1330 F Guliants, E.A. . (5)466 Inohana, Y.. (11)1139 Guo, F. . . (9)946 Isaacs-Smith, T ... (6) 635 Faleev, N.N. . (5)384 Guo, S.P. . (7)799 Ishida, K.. (11)1139 Fan, Y.F. . (10) 1122 Guo, Y.. . (10) 1022 Ishiguro, T.. ... (7) 785 Fang, Y.-K.. . (2) 129, (5) 500, Guoli, M..... . (8)834 Ivanov, D.. (10)1074 (12)1341 Gurgenian, H.K. . . (7)720 Faraone, L.. ... . (7)651,(7)743 Gutmann, R.J. . (5)356 J Fatemi, M. . (5)370,(7)827 Fathima, K.. . . (10)1039 H Jack, M.D.. (7) 688 Federov, A.G. . ... (4)298 Jackson, M.D.. (2) 124 Fedison, J.B. .. . (5)370,(7)827 Haakenaasen, R. . (7)710 Jadwisienczak, W.M.. (7) 776 Fejes, P. . (12)1357 Habard, A.F. . (5)336 Jang, H.W. .(8) 868 Feng, S. . (7)811 Haller, E.E. . (7)754 Jang,J.-S.. (9)903 Feng, W. . (3)185 Han, S.S. . (10)965 Jang, S.-Y.. (5) 478 Ferguson, I.T.. . (6)631,(9)903 Han, S.-Y. . (3)209 Jang, T.. (5)506 Field, D.P. . (1)1, (1)40 Handwerker, C.A. . (5)545 Jantunen, H.. (3) 191 Fine, M.E. (11) 1195,(11) 1238, Hark, S.K. . (4)316 Jasinski, J.. (5) 429 (11)1276 Harper, J.M.E..... . (6)597 Javorka, P.. (12) 1321 Fiory, A.T. .. (10)981,(10)999, Harrell, W.R. . (10) 1090 Jenny, J.R. . (5) 366 (10)1074 Harringa. J.L. . (11) 1166, Jensen, J.E.. (3) 220, (7) 688 Flynn, J. . (5)402 (11)1190 Jeon, C.M.. (8) 868 Fogarty, T.N.... . (5)437 Havemann, R.H. . . (1) 10, Jeon, Y.-D.. (5) 520 Foran, B.. . (1) 10 (10)1052 Jeong, C.O.. (6) 610 Fox, A. . (12)1321 Hebard, A.F. . (5)411 Jeong, J.S.. (50 529 Franc, J. . (7)738 Hellgren, N. . (9)L11 Jeong, S.W.. (6) 557 Frank, A. . (1) 10 Hess, D.W. . (10)1096 Ji, C. . (5) 466 Frear, D. . (11)1129 Heuken, M. . (12)1321 Jiang, Q.-T. . (1) 1, (1) 10, Fu, G..... . (10)1066 Hildebrandt, G.... . (7)726 (10)1004 Hjort, K. . . (2)113 Jiang, Y.. (8) 887 G Ho, C.E. (6)584,(11) 1264 Jin, L.. (10) 1074 Ho, F.C. . (2) 129 Jin, S.. (11) 1129,(11) 1160 Gagliano, R.A.. . (11)1195, Ho, J.-J. (2) 129,(12) 1341 Johansson, L.I.. (12) 1353 (11)1238 Ho, P.S. (6)610,(10) 1052 Johnson, J.W.. (5) 437 Gan, D. . (6)610 Hobgood, H.M. . (5) 366 Johnson, S.M.. (7)815 Ganguly, S.. . (3)214 Hoi, Y.M. . (5)535 Johnson, V.A.. (7) 802 Gao, Y. . (5)376 Holland, O.W. . (6) 568 Jones, K.A.. (6) 568 Gao, Y.H. . (5) 391 Hdmmerich, U. . (7)806 Jordan-Sweet, J.L.. (6) 597 Gasior, W. (11) 1139,(11) 1225 Hong, S.-M. . . (10) 1104 Jou, W.S..(3) 178 Gessmann, Th. . (5)416 Hopp, B. . (4) 239 Jozwikowska, A.. (7) 677 Ghosh, G. (11) 1195,(11) 1238 Hoschl, P. . (7)738 Jozwikowski, K.. (7) 677 Giannuzzi, L.A. . (1)33 Hough, E.C. . (1)33 Jung, J.-P..^^ (io) 1104 Gil, G.S. . (10)988 Houng, M.-P. . (1)71 Giles, N.C. . (7)770 Hozhabri, N. . (1)L7 Gillespie, P. . (10) 1004 Hsieh, K.C. (8)895,(11) 1203 Gians, P.-A. . (12)1353 Hsieh, M.-C. . (12) 1341 Kainuma, R.. (11) 1139 Glass, R.C. . (5)366 Hsieh, W.-T . (12)1341 Kaleczyc, A.W. . (7) 822 Gokce, 0. . (10)1074 Huang, C.J. . (12) 1309 Kaltenpoth, G.. (5) 449 (Jolan, Y. . (1)88 Huang, C.-S. . (11) 1230 Kanchanomai, C. ... (2) 142, (5) 456 Golding, T.D.... . (7)705 Huang, C.-Y. . (2) 152 Kang, B.J.. (6)610,(8)857 Goldstein, J.T.. . (7)791 Huang, D. . (2) 129 Kang, C.-S.. (10) 1104 Gopinath, A..... . (4)253 Huang, J.-W. . (2) 99 Kang, J.S.. (11) 1238 Gossard, A.C. .. . (3)196 Huang, M.L. . (5)442 Kang, S.H.. (10)957,(11) 1129 Gossmann, H.-J.L. (10) 999 Huang, W. .. (5)449,(8)887 Kang, S.K.. (11) 1283, (11) 1292 Gou, S.P. . (6)631 Hubbard, S.M. . (5)395 Kanicki, J.. (5) 512 Govorkov, A.V. , . (5)384 Huff, H.R. . (2) 124 Kao, C.R.. (6)584,(11) 1129, Graetz, E. . (3)214 Huffman, L. . (9)L11 (11) 1264 Graff, J.W. . (5)416 Hung, H. . (1)82 Kar, A.. (3) 200 Graff, M. . (11)1270 Hung, K.C. . (10)1117 Karamcheti, A.. (2) 124 Graxulis, L. . (10)1112 Hunter, A.T. . (7)688 Kasai, I.. (3) 220 Grayson, B.A.... . (5)380 Hussain, Z. . (6)615 Katulka, G..’ (5) 346 1371 Kawauchi, Y. . (7)785 Lee, H.M. (6) 557,(10)965 Martin, S. . (5)512 Kempf, B. (4)278,(11) 1270 Lee, J.G. ... (4) 292, (6) 610, (8) 857, Martinka, M. (7) 732, (7) 749, Kempshall, B.W. . (1)33 (9)946,(11) 1152,(11) 1181 (7)822 Kim, C.-U. . (10)1004 Lee, J.-H. (6)576,(11) 1175 Mason. W. . (7)669 Kim, C.W. . (6)610 Lee, J.-L. .. (3)209,(8)868 Masuda, Y. . . . (7)785 Kim, H.G. . (10)965 Lee, J.-W. . (11)1304 Matsuhashi, H. . (10)1052 Kim, H.K. . (5)529 Lee, J.Y... . (5)529 Matteson, T.L. . (1)33 Kim, H.S.... . (5)529 Lee, K.-D. . . (10) 1052 Matveen, V.N. . (1)40 Kim, J.H. . (6)557 Lee, K.P. .. (5)336,(5)411 Mavoori, H. .. . (11)1160 Kim, J.K. . (8)868 Lee, S.-K. . (5)340 McCabe, R.J. . . (11)1276 Kim, J.S. . (7)683 Lee, S.L. . (8)848 McCov, S.P. . (10)999 Kim, K.D. . (9)933 Lee, W.H.. .. (6)610,(8)857 McKinley, J.M. . (10)999 Kim, S.G. . (6)610 Lee, W.J. . (2)129 Meesham, R. . (5)346 Kim, S.J. . (4)244 Lee, Y.-H. (4)244,(11) 1175 Mehta, V.R.. (10) 999. (10) 1074 Kim, S.Y. . (8)868 Lee, Z.-H.. . (11) 1304 Mei, S. . (2) 136 Kim, T.-H. . . (2) 95 LeFran^ois, M.E.. . (10)999 Merchant. S.M. . (10)1047 Kim, Y.-H. . (10) 1009 Lepistd, T. . . (11) 1130 Merrett, J.N. . (6)635 Kim, Y.M. . (3)196 Leppavuori, S. . (3) 191 Mesrooian. S. . (7)720 Kim, Y.-S. (6)576,(11) 1175 Lewis, D. . (2)161 Metzger, R.A. . (8)841 Kinck, M.A. .. . (7)715 Li, H.-J.. . (3)214 Mevler. B. . (1)88 King, D.F... . (7)815 Li, J.-B.. . (4)321 Michael, N.L. . (10)1004 Kirchner, K.W.... . (6)568 Li, M.. . (11)1256 Michaluk, C.A. . (1)2 Kirichenko, T. . (3)214 Li, S.. . (9)916 MilVidskii, M.G. . (5) 384 Ko, Y.K. ... (6)610,(8)857 Li, Y.-L.. . (5)416 Minor. A.M. . (10)958 Kobayashi, N. . (4)313 Lianer, H.. .. (4)272,(8)872 Miotkowski, 1. . (7)754 Kocsis, Z. . (4)239 Liliental-Weber, Z. (5)391. Miraglia, P.M. . (5)421 ■ Kohl, P.A.. (10) 1080, (10) 1096 (5)429 Mivashita, Y. (2) 142,(5)456, Kohli, P. . (3)214 Lilleodden, E.T.... . (10)958 (8)879 Kohlscheen, J. . (5)380 Lim, H.S.. (10) 1032,(10) 1039 Mo, Z.. . (9)916 Koike, K. . (2)108 Lim, T.S... . (5)529 Moizes, I.. . (4)239 Kolodzey, J. . (5)346 Lin, C.-F. . (12) 1330 Mdnig. R. . (1)45 Kong, S.-M. . (3)209 Lin, C.-H. . (9) 907 Moon, D.W. . (5)529 Kononenko, O.V. . (1)40 Lin, C.-S. . (12) 1341 Moore. F. . (7)726 Konovalov, V.V. . (5)351 Lin. K.-L. .. (8)861,(9)940 Morasch, K.R. . (1)66 Koo, S.-M. . . (5)340 Lin, W.. . (7)799 Moravec, P. . (7)738 Kordos, P. . . (12)1321 Lin, W.-T. . . (5)500 Morinaga. M. . (3) 185 Kosai, K.. . (3)220 Lin, Y.L. . (6) 584 Morishita. H. . (7)785 Kovacs, B.. . (4)239 Lita, A.E..... . (1)55 Morris, J.W., Jr. . (10)958 Ksiezarek, S. . (11)1225 Littler, C.L. . (7) 705 Morrow, K. . (7)802 Ku, T.-M. .. . (8)848 Liu, J.. . (9)916 Moser, Z.. (11)1139,(11)1225 1 Kuang, J.H. . . (8)895 Liu, X.J.. . (11) 1139 Mu, N... . (6)564 Kumakura, K. . (4)313 Liu, Z.. . (6) 646 Mudra, 1.. . (4)239 Kumar, A... (8)848,(10) 1016 Lorentzen, T. . (7)710 Muller. St.G. . (5)366 Kurokawa, A. . (2)108 Lou, R.-F.. . (1)71 Murakami, M.. . (1)76 Kuskovsky, I.L.... . (7) 799 Lozykowski, H. J... . (7)776 Musca, C.A.. (7)651,(7)743 Kutcher, S.W. . (7)806 Lu, Y. . (7)811 Muth, J.F.. . (DLl Kuzma, M. . (8)831 Lucas, J.P. ... .. (4)292,(9)946 Muthukumar, S. . (7)811 Kyung, K.M.. . (10)988 Luo, B. .. . (5)437 Mutoh, Y.. (2) 142, (5) 456, Luo. L. . (8)887 (8)879 L Luo, T.Y... . . (2) 124 Myers. T.H. . (7)770 Luo, X.. . (5)535 Lai, Z. . (9)916 Luth, H.. . (12) 1321 N Lalena, J.N.. . (11)1244 Luttmer. J.D. . (1) 10 i Lambracht, P. ... . (4)278 Nahm, J.-Y. . . . (5)512 i Lan, E.. . (12)1357 M Nakamura, K.. . (2) 108 j Larsen, W. . (7)669 Nakazawa, S. . (1)14 i Laursen, T. . (10)1059 Macak, E.B.. . (12) 1353 Nasedkin, K.A.. . (4) 298 Lavoie, C. . (6)597 Madishettv. S. . (10)999 Nashchekina, O.N. . (4) 298 Law, C.M.T. ... (9)921,(9)928 Madsen, L.D.. . (12)1353 Nathan. V. . (7) 694 Le Mogne, T. . (8)872 Makimoto, T. . (4)313 Ndap,J.-0. . (7) 795, (7) 802 Le, H.. . (12)1357 Maksimov, 0. . (7)799 Neidhardt, J. . (9)L11 Le, L.. . (2)136 Mannan. S.L. . (8)879 Neumark, G.F... . . (7)799 1 Leboeuf, S.F.. . (DLl Maranowski, K.D. . (7)815 Newbury, B.. . (5)545 1 Lee, B.-T.. . (3)209 Marks, M.R. . (4)265 Ngo. M.. . (7)720 1 Lee, C.-R.. . (4)327 Marshall, C.. . (4)253 Nguyen, T.. . (7) 652 Lee, C.-W. . (9)903 Marso. M. . (12)1321 Nibur,K.A. .. . (1)66 Lee, D.L. . (7)664 Martin, J.-M. . (8)872 Nicholson, J.M. . (5)545 1372 Nishida, T. . (4)313 R Shevelev, M. . (3)214 Nishizawa, J. . (6)591 Shi, Y.... . (6)564 Norris, P.E. . (5)384 Rablau, C.I. . (7)802 Shi, Y.W. . (10)1122 Notis, M.. . (2)161 Radford, W.A. . (7)815 Shiau, L.C. . (11) 1264 Nowell, M.M. (1) 1,(1) 10,(1)23 Rahman, M..... (10) 1032, (10) 1039 Shieh, M.-C. . (12)1341 Nuho Lu, Q.. . (2) 119 Ramappa, D. . (10)1047 Shih, H.D. . (7)715 Ramasamy, P. . (3)227 Shim, P.B. . (10)988 O Ramdas, A. . (7)754 Shis, D.-Y.. (11) 1283, (11) 1292 Ramirez, A.G..... . (11)1160 Shlenskv, A.A. . (5)384 Obermayr, W. . (8)831 Ravindra. N.M. . (10)957, Shon, H.K. . (5)529 Ogawa, E.T. . (10)1052 (10)999,(10) 1074 Sikder. A.K. . (10)1016 Oh, M.. . (10) 1047 Ready, W.J. . (11)1208 Singh, M. . (3)234 Ohnuma, I. . (11)1139 Reber, J.C. . (10)1112 Singh, R.K. . (12)1325 Olson, G.L. . (7)688 Redfern, D.A. . (7)651 Sitter, H. . (7)738 Onishi, T. . (1) 14 Redwing, J. . (5)335 Sivananthan, S. . (7)651 Osinsky, A. . (5)384 Reed, M.J. . . (l)Ll Slifka, A.J. . (4) 286 Ostling, M. . (5)340 Ren, F. . (5)437 Smirnov. N.B. . (5)384 Overberg, M.E.... .... (5)336,(5)411 Rettenmayr, M... (4) 278, (11) 1270 Soh, H.S.. . (8)857 Ripka, G. .... . (4)239 Soloviev, S.I. . (5)376 P Ristolainen, E. . (11)1130 Song, J.Y. ... . (12)1347 Roberts, J.C. . (l)Ll Sopori, B. . . (10)972 Page, R.H. .. . (7) 802 Rodwell, M.J.W. . (3)196 Spariosu, K. . (7)669 Paik, K.-W. . (5)478 Roe, K.J. . (5)346 Spencer. M.G. . (6)568 Paik, K.-Y. . (5)520 Rogacheva, E.I. . (4)298 Srinivasan, T. . (3)234 Pal, R... . (7)743 Roealski, A. . (7)677 Sritharan, T. . (11)1250 Pan. M. . (5)361 Roh, N.S. . (6) 610 Stach, E.A. . (10)958 Pan, T.Y. . (5)545 Roskowski, A.M. . (5)421 Stahlbush. R.E. (5)370,(7)827 Parihar, V. . (1) 10 Roth, J.A.. . (7)688 Stapelbroek, M.G... . (7)699 Park, D.-S. . (10)1009 Rowland, L.B. (5) 370, (7) 827 Steckl, A.J. ... . (5)361 Park, H.S. . (6)610 Rov. U.N. * . (7)791 Steen, H. . (7)710 Park, I.S. . (12)1347 Ruffleux, P. .. . (12)1316 Steinbriichel, C. . (2)124 Park, J.C. . (10)988 Stockman, S.A. . (2)99 Park, J.-H. . (11)1175 S Stoltz, A.J. (7) 669, (7) 749, Park, J.K. . . (10)965 (8) 822 Park, S.I. . (10) 965 Saddow, S.E. . (5)380 Subramanian, K.N. . (4) 292, Park, S.-J. . (9) 903 Sakong, D.S. . (6)610 (9)946,(11) 1152,(11) 1181 I Park, W.I. . (8)868 Salama, LA. . (3)200 Sudan. P. . (12)1316 Parker, C.A. . (l)Ll Salzman, J. . (1)88 Sudarshan, T.S. . (5)376 Pasquaariello, D. . (2)113 Sanchez, J.E., Jr. .... . (1)55 Suganuma, K. . (6)551 Patel, B. . (7)776 Schaake, H.F. . (7)715 Suh, S.H. . (7)683 Pavlidis, D. . (5)395 Schlaf, R. . (5)380 Summers. J. . (8)848 Pearton, S.J. .. (5)336,^5)384, Schlapbach. L. . (12)1316 Sun, N... . . (6)564 (5)411,(5)437 Schubert, E.F. . (5)416 Sun, Z. . (8)887 Pelto, C. . (12)1330 Schwaller, P. . (12)1316 Sung, W.-L. . (5)472 Peterson, J.M. . (7)815 Schwarz, S.W. . (1)33 Suto, K. . (6)591 Phillips, J. . (7)726 Scofield, J. . (5)361 Swann. C.P. . (5)346 Phillips, J.D. . (7) 664 Scotch. A. . (2)161 Swartz, W. . (5)380 Piotrowski, J. . (7)743 Scott, T.L. . (10)994 Syversen, H.. . <1) 710 Poliak, F.H. . (6)631 Sentil Kumar. A. . (10)1032, Szentpali, B. . (2) 113 Polley, C.J. . (5)437 (10)1039 Polyakov, A.Y. . (5)384 Seo, D.W. . (7)683 T 1 Poole, K.F. . (10)1090 Seok, J.H. . (6)610 j; Pophristic, M. . (6)631 Seong, T.-Y. . (9) 903 Takaku, Y. .(11) 1139 Popov, G. . . (10)1074 Shah, P.B. . (6)568 Tamargo, M.C. . (7)799 1 Powell, A. . (5)366 Shah, R.T. . (7)806 Tanikella, R.V. . (10) 1096 1 Prakash, K.H. . (11)1250 Shangguan, D. . (11)1130 Tanno, T. . (6) 591 ' Preble, E.A. . (5)421 Sharma, S.C. . (1)L7 Tavrina, T.V. . (4)298 ! Prisbrey, K.A. . (10)994 Sheen, M.T. . (8)895 Tedenac, J.-C. . (4) 321 Proter, L.M. . (5) 506 Sheng, H. . (7)811 Telang,A.. (11)1152,(11)1181 - Pstrus, J.. (11) 1139, (11) 1225 Sheridan, D.C. . (6)635 Teng, H.C. . (8)895 ' Ptak, A.J. . (7)770 Sheu, J.K. . (5)416 Terpstra, R.L.. (11) 1166, (11) 1190 is Terterian, S. . (7)720 1 Q * Erroneously printed as N. Roy in Theodoropoulou, N. . (5)411, !; “Growth of Cr- and Co-Doped CdSe (5)336 1 ■ Quick, N.R. . (3)200 Crystals from High-Temperature Thirumavalavan, M . (3)234 1 Selenium Solutions,' J. Electron. Thomas, C. . (6)568 j Mater. 31 (7) (2002), p. 795. Thomas, M. (7) 669, (7) 749 ' 1 _ 1373 Ting, S.-F. . (12)1341 Wang, L. . (7)770,(7)770, Xie,Q.. . (12)1357 Tomita, Y. . (7)785 (9) 921, (9) 928 Xu, A.. . (7)776 Toth, A.L. . (7)738 Wang, M.-J. . (5)500 Xu, B. . (5)449 Trivedi, S.B. . (7) 806 Wang, S. .. (5)370,(7)827 Xu, G.H. . (4)272 Trosdahl-lversen, L. . (7)710 Wang, S.S.. . (3)171,(5)488, Xu, X.... . (5)402 Tsai, B.-Y. . (2)129 (5) 494, (6) 640 Tsai, R.Y. . (6)584 Wang, X. . (9)916 Y Tsair, Y.-S. ... . (12)1341 Wang, Y.-H. . (1)71 Tschudin, C. . (4) 278 Wanqi, J. . (8)834 Yamashita, M. . (6)551 Tsunoda, Y. . (1)76 Want, T. . (9)916 Yan, B. . (10) 1022 Tsvetkov, V.F. . (5)366 Watson, K.M. . (1)L7 Yang. D. . (4) 304 Turbini, L.J. . (11) 1208 Watt, V.H.C.. . (2) 124 Yang, H.J. .. (6)610,(8)857 Turunen, A. . (3) 191 Weidong, H. . . (2)136 Yang, S.-H. . (4)248 Turut, A.. (2) 119, (12) 1362 Weirauch, D.F. . (7)715 Yasuda, K. . (7)785 Tyagi, R.. . (3)234 Weiser, M.W. . (11)1129, Yeh, J.-H. . (11)1230 (11)1244 Yeh, M.S. . (9) 953 U White, J.K. . (7)743 Yeo, D.H. . . (4) 244 Wijewarnasuriva, P.S. (7) 699. Yi, C.. .... (2)95,(8)841 Uusimaki, A. . (3) 191 (7)726 Yi, G.-C. . (8)868 Wilkins, R. . (5)437 Yi, S.S. . (2) 99 V Williams, G.M. . (7)699 Yim, M.J. . (11)1292 Williams, J.R. . (6)635 Yoda, R. . (1)16 Valiaev, V. . (5)395 Wilson. R.G. . (5)336,(5)384, Yokoyama, M. . (4)248 Van Rheenen, A.D. . (7)710 (5)411 Yoon, K.H. . (4)244 VanMil, B.L. . (7) 770 Windover, D. . (8)848 Young, B.-L. . (11)1230 Varadarajan, E. .... . (3)227 Wolan, J.T. . (5)380 Young. R.B. . (10)994 Varesi, J.B. . (7)815 Wolf, J. . . (5)478 Yu, C.L. .. (5)488,(6)640 Vaudo, R.P. . (5) 402 Wolter. M. . (12)1321 Yu, D.Q. .. (9)921,(9)928 Venzor, G.M. . (3)220 Wong, K.S. . (4)316 Yu, J. .. . (12)1347 Virojanadara, C. . . (12) 1353 Wong, M.M. . (5)406 Yu, K.M. .. . (7)754 Virt, I.S. . (8)831 Wood, M.C. . (6)568 Yu,T.J... . . (6)591 Vispute, R.D. .... . (6) 568 Wowchack, A.M. .. . (5)437 Yujie, L.. . (8)834 Volkert, C.A. . (1)45 Wright, G..... . (7)795 Volobuev. V.V. . (4) 298 Wright, S.I..... . (1)50 Z Wu, C.M.L. . (5)442,(9)921, W (9)928 Zamir, S. . (1)88 Wu, F... . (1)88 Zandian, M.. . . (7)726 Wahab, Q..... . (12) 1353 Wu, J. . . (7)754 Zavada, J.M... .. (5)336,(5)411 Waldron, E.L. . (5)416 Wu, T.L. . (3) 178 Zetterling, C.-M. .. .. (5)335,(5)340 Walukiewicz, W. . (7)754 Zhang, F. . (11)1256 Wan, C.F. . (7)715 X Zhang, J. . (10) 1090 Wang, C. . (3) 185 Zhang, X.B.. . (4)316 Wang, C.C. (7) 720,(7)806 Xia, Z. . (6)564 Zhao. J. . (8)879 Wang, C.-H.. . (9) 907 Xia, Z.D. . (10)1122 Zheleva, T.S. . (6)568 Wang, H.-H. . (1)71 Xiaona, Z.. . (8)834 Zhu, T.G. . . (5)406 Zvanut, M.E.. (5) 351 Key Word Index A Ag-Sn intermetallic (6) 551 anneal(ing) (1) 10, (7) 694, (Ag-Sn)„„,+Cu additions (11) 1225 (8) 834, (8)857,(10) 1074, abnormal grain growth (1)40 aluminum (6)568,(10) 958, (12)1357 abrasive particle (10)1022 (10) 1080 annealing caps (6)568 acceptor diffusion (2)99 A1 contacts (10)1090 anodic oxidation (12)1362 acid etching (5)402 A1 thin films (10)1009 antisite atoms (6)591 acoustic emission (10)1016 Al-0.5wt.%Cu (1)55 APDs (3)234 activation (7) 694,(7)715 AlGalnP (2)99 arsenic (7) 694, (7) 705, (7) 715 activation energy .. (1)71,(4)244, AlGaN (5)406,(12) 1337 arsenic doping (7)660 (5) 442, (9) 953 AlGaN/GaN (5)437 asperity contact (10)1022 adduct (12)1337 AlGaN/GaN HEMT (12) 1321 atomic force microscopy (AFM) adhesion (12)1347 AlGaN/GaN superlattice (5) 384 (1)66, (5) 340,(5)376, Ag alloy. (6)610 AlInAs (2)95, (8) 841 (5) 380,(5)395, (5)421 Ag contacts (12)1316 alternative-substrate Au/n-Alj, jjGaQj-.NrSi diode (4)327 Ag thick films (3)171 HgCdTe (7)815 Au/Ni/Cu metallization (il)1264 Ag-epoxy. (6)551 aluminum nitride (5)395, (6) 568 Au/n-Si (2)119 aging. (9)928 amorphous (1)33,(10) 1117 Au/SiC (12)1353 1374 Au/Sn. (11) 1175 conductive adhesive (6) 551, (10)972,(10) 1047,(12) 1321 Au-Sb system. (6) 557 (9) 933 degradation mechanism. (9) 916 Au-Sb-Sn system (6)557 conductivity. (4)248 delamination. (5) 449 avalanche photodiodes. (7) 688 contact resistance (5) 346 density. (il) 1225 contacts. (i2) 1353 density-of-states. (5)512 B continuous-wave laser (7) 759 denudation (10)988 copper. (1) 16, (1)"33, (9) 907 detectors ....’I’’"""’ (3) 220, (7) 688 bake stability. (7) 743 copper interconnects (10) 1004, diazonaphthoquinone (7) 749 ball grid array (BGA). (il) 1203 (10) 1059 die attach. (11) 1244 band anticrossing. (7) 754 copper substrate. (11) 1195 dielectric. (10) 1096 band offset. (4) 313 copper thin films (10) 1047 dielectric material (3) 191 bandpass fiiter. (3) 191 CrCdMnTe . (7) 759 die-shear strength. (10) 1104 barrier height. (4) 327 Cr:CdSe . (7) 759 differential scanning calorimetry barrier layer (5) 472 Cr.-ZnS. . (7) 759 (DSC). (8)861,(11) 1283 Beer-Lambert law. (7) 795 CriZnSe. (7) 759 diffusion. (6) 551, (10) 1096 bimetallic films. (10) 1080 Cr^" ion.. (7) 806 diffusion barrier (10) 988 Blech effect.(10) 1052 Cr“":CdSe. (7)802 diffusion coefficient. (8) 834 bonding. (11) 1160 Cr^:CdSSe"’""‘""’^”"'‘^’’^^‘"‘ (7) 791 diffusional couples. (il) 1238 bonding stren^lis. (3) 171 crack initiation. ^2) i42, (5) 456 dilute magnetic semiconductors boron. (5)351 crack propagation .. (2) 142, (5) 456 . (5)411,(5)336 bump. (iO) 1104 creep (5)442,(8)879, diode-pumped solid-state laser Butler’s method. (11) 1225 (9)928,(iO) ii22 . (7)759 creep resistance (11) 1276 direct-write (3)200 C critical length effect. (10) 1052 dislocation density (5)402 cross slip. (4) 304 dislocation pile-up (4)304 calculation of phase diagram cross-hatch. (7) 732 dislocations. (5) 370,(8)831 . (11)1139 crosstrack infrared sounder (7) 726 dispersion strengthening (6)564 CALPHAD method. (6) 557 crystallization. (10) 1117 dopant interactions. (2) 99 capacitance-voltage. (12) 1353 crystallization quality. (8) 834 dopants (2)99 capacitance-voltage crystallographic orientation (1) 10 doping ..;;;;;"i7i694"r7r776,"(7) 811 characteristics (4) 313 crystallographic texture (1)40 doping mechanism (7) 785 carbon. (6) 568 c-Sij.^,^C^Ny."(12) 1341 DRAM. (10) 988 carbon fiber. (3) 178 coicindent site lattice (CSL) (1) 50 dry etching. "("7") "7’I38! ,(10)994 carbon nanotube. (5) 391 dual beam. (1) 33 carbon nitride (9) Lll Cu dissolution. (6) 576 dual damascene ( iO) 1052, carbon source. (12) 1341 Cu/ln interface. (5) 488 (10)1059 carrier transport (7) 652 Cu interconnects (iO) 1052 ductility-modified Coffin-Manson’s cathodoluminescence (4) 248, Cu(Mg) alloy.I"’!’’”!!’.... (8) 857 relationship. (5) 456 (5)384 (Cu,Ni)gSn5 ternary Cd/Hg. (7) 683 compound. (11) 1256 CdHgTe. (7) 710 Cu oxidation. (8) 872 CdTe .... (7) 743, (7) 749, (7) 785 Cu passivation. (8) 872 early failure. (10)1052 CdZnTe (7) 710, (7) 720, (7) 732, Cu reliability.. (iO) 1052 EBsp..(d 33 (7) 749, (7) 822, (8) 834 Cu thin films (1)40 edge termination. (6) 635 Ce and La rare earth elements CUgSn^.;;■”( 11) li95,"(i'i) 1304 elastic-light scattering (6)597 . (9)921,(9)928 Cu-low k dielectric. (5) 472 electric potential. (4) 272 chalcogeniide. (7) 759 curing."" (8) 887 electrical activation (10) 999 chemical diffusion (7) 738 curing process. (1) 82 electrical and optical properties chemical mechanical polishing current degradation. (5) 370 . (2)129 (CMP) (10) 1016, current duty ratio. (iO) 1039 electrical conductive adhesive (10) 1059, QO) 1066 current-voltage (12) 1353 . (9)916 chemical-mechanical planarization Cu-Sn.""’”"!!!!"!! (11) 1238 electrical properties (9) Lll, . (10)1022 Cu-Sn intermetaiiics. (11) 1166 (11) 1292 chlorine. (10)994 cutoff wavelength (7)664 electrical resistivity (7) 795, cobalt.1175 cvD.(5)36i (9)933, (11) 1190 . Co alloys. (6) 597 cycle dependent. (8)879 electrochemistry of Cu (8) 872 Co silicide. (6) 597 cyclotron. (3) 21 electrode effects. (3) 209 coarsening. (4) 253 electroless Ni. (5) 520 COB .."’I!’!""’.”""’" (8) 887 D electroless Ni-P (10) 1117, coefficient of friction. (iO) 1016 (11) 1230, (ll)i283. coefficient of thermal expansion damage characterization (4) 292 electroluminescence. (5) 370 . (10)1080 Damascene Cu line (1) 10 electromagnetic shielding (3) 178 composite solder. (11) 1304 data retention. (iO) 988 electromigration. (1)45, composition gradient. (7) 710 dc-pulsed magnetron sputtering (1)82, (5) 472,(10) 1052 composition ratio (4) 248 . (2) 129 electron backscatter diffraction compositionally modulated defect decoration (5) 402 (EBSD) (1)2, (1) 16, (1)23, superlattice. (4)316 defects.^""(S) 429,' (7) 732, .(1)33,(1)40,(1)50 electron cyclotron resonance Ge segregation (5) 500 (8)831 (ECR). (7)749,(7)822 glow discharge mass spectrometric InGaN. (1) LI, <4) 313, (5) 416 electron-beam moire (4) 286 (GDMS) (7) 795 InGaN/GaN heterostructure electronic. (5) 535 gold."(iO) 1080 (3)227 electronic devices (il) 1160 gold piating. (4) 265 InP.’ ' IS) 841 electronic mounting (3) 185 grain boundary shear. (4) 304 in-situ steam generation electroplated Ni. (il) 1283 grain growth (1) iO, (10) 965, (ISSG). (2i 124 electroplating. (5) 478, (10) 1047 (12)1357 in-situ TEM (10)958 ELID grinding (10) 1039 grain size (1)2, (1)10, In-Sn.'2) 152 elongation. (9)921 (4) 304, (ibVbss. interconnections (1)16 embedded passive (4) 286 interconnects (10) 1047 EMI."""”’’11 (5)535 H interface diffusion (10)1004 emission lifetime (7) 802 interface electromigration emissivity (10) 981 R, plasma treatment. (12) 1316 . (10)1004 epitaxial films. (4) 298 hafnium (5) 500 interface-fracture energ\’ (12) 1347 epoxy (9)933 Hall.(5)356 interface intermetallics (11) 1250 EPR.."""’!"’"I'"!"’”(’5’)”35X (5) 366 hardness. (1) 66 interface reaction (11) 1175, equivalent oxide thickness heat dissipation. (5) 535 (11)1203 (EOT). (2) 124 heat treatment , (6) 59i, (11) 1190 interface states. (2) 119 erosion. (io) 1059 heteroepitaxial. (5)466 interface traps (5) 356 eutectic (2) 161 heterojunction bipolar transistor interfacial reaction)s) (2) 152, eutectic Sn-Ag solder (4) 292 (HBT). (2) 95, (3) 196, (8) 841 (6)584,(11)1256,(liTl283 eutectic Sn-Cu (5)442 heterojunction diode. (4) 313 interfacial tension (3) 227 heterostructures (7) 694 intergranular creep fracture F HgCdTe (3) 220,T7)"652,‘ (7) 660, . (9)953 (7) 664, (7) 669, (7) 683, (7) 688, interlayer (5)506 fatigue-crack growth (8) 879 (7) 694, (7) 705, (7) 710, (7) 715, intermetallic compound)s) (IMC) Fe;ZnSe.(7) 759 (7) 720, (7) 726, (7) 732, (7) 738, (3) 171,(4)265,(5)478, ferromagnetism (5)411 (7) 743,(7) 749,(7) 815,(7) 822, (5)'488,T5) 494, (6) 640, (10) 1117, FIB.(1)33 (8) 831 (11) 1230,(11)1292 FIB damage. (1) 33 HgCdTe heterostructure devices intermetallic diffusion (10) 1080 fiber orientation. (3) 178 (7)677 intermetallic) s) (9)940,(11) 1264, field-effect mobility (5)512 H^dfe/Si. (7) 815 (12) 1330 filament formation. (11) 1208 high mobility transistor (5) 437 intersection of dislocations fillet lifting (5) 545 highly mismatched alloys ___ (7) 754 . (4)304 film. (9) Lll high-purity semi-insulating interstitial atoms (6) 591 finite-element method (8) 895 (HPSI). (5) 366 intrinsic defects. (5)351 flexible graphite (5) 535 high-resolution transmission iodine doping. (7) 785 flip chip .(4) 253" (5) 520, electron microscopy ion beam sample (5)478, (ib) ii64, (11) 1256 (HRTEM). (2) 124 preparation (1) 23 flux chemistry. (11) 1208 high-temperature solder. (6)557 ion implantation (5) 336, (5) 346, flux-free. (10) 1104 hillock formation (1)45 (5) 406, (5) 411,"(6) 568, (10) 981, form accuracy (10) 1032, HVPE.’H’'I"’"’"(5)429 (10)999 (10)1039 hydrogen etching. (5) 380 ion milling. (7) 710 4HSiC. (5)351,(5)340, hysteresis. (2) 124 IR permeability. (8) 834 (5) 356,(5)366,(10) 1090 isolation trench (7) 822 FPAs (7)720 I isothermal aging (4)265 fracture surface (10)1104 fresh Li (6)615 ICP-RIE (3)209 J friction-stimulated chemical wear idealitv factor (4)327,(5)406 (8)872 II-VI semiconductor (7)795, ioint (9)933 (7)806 joint microstructure (11)1166 G image quality (1)33 joint shear strength (11)1166 imidization (1)82 junction termination extension GaAs(OOl) (10)1112 implantation (7)754 (6)635 GaAs/Ge (3)234 impurities (5)351,(10)972 GaAsSb (2) 95 In-46Sn/Cu (6)640 K GaAsSb-base (2) 95 In49Sn solders (3)171 GalnAs (8)841 indium (11) 1139 kinetics (12)1330 gallium nitride (GaN) (4)313, indium phosphide (InP) (4)244 (4) 321, (5) 395, (5) 402, (5) 406, indium tin oxide (ITO) (2)129 L (5) 411, (5) 416, (5) 421, (5) 429, inductively coupled plasma (6) 631,(9) 903,(12) 1337 (ICP) (5)340,(10)994 large-format focal-plane array GaN nanowires (5)391 infrared detector)s) (7) 664, (FPA) (7)815 GaP (6)591 (7)669,(7)720 laser doping (3)200 gate dielectrics (2) 124 infrared microscopy (4)286 laser-diode packaging (8 >895 Ge (5)346 infrared photodiode)s) (7)815, lateral growth (1)88 1376 lattice mismatch. (3) 227 moisture absorption (10) 1096 oxynitride (2) 124 lattice-matching (7) 732 moisture diffusion (5) 449 ozone (2)108 lead-free (4) 278"(5) 478(8) 879, molecular beam epitaxy (11) 1130,(11) 1160,(11) 1244 (MBE) (3) 220, (7) 664, P lead-free BGA-balls (11) 1270 (7) 688, (7) 694, (7) 710, (7) 726, packaging (3) 185 lead-free solder(s) (2) i52, (4) 292, (7)770,(7)815 passivation (7) 683, (7) 743, (5) 545, (5) 456, (6) 557, (6) 564, Monte-Carlo simulation (10)965 (10) 1004 (6) 584, (8) 861, (9) 940, MoO,.(6) 615 Pb/63Sn (5)478 (10) 1104, (10) 1122,(11) 1139, morphology. (ii) i250, (11) 1292 Pb-free soldering materials (11) 1190,(11) 1276, (11) 1292, MOS capacitor (12)1309 (11)1225 (11)1304 MOSFET . (5) 356 PbSe (4)298 lead-free solder alloy (2) 161, MRAM .(10)994 p-doping (5)416 (5)442 MSM (1) LI peel test (12)1347 lead-free solder material (2) 142 multilayer component (3)191 pendeo-epitaxy (PE) (5)421 leakage current (2) 124 phase diagram (4) 278, (6) 557 linear growth kinetics (5) 494 N phase equilibria (2) 152, (9)907 liquid metal embrittlement phosphor (4) 248 . (4)278 n"^-CdTe layers (7) 785 phosphorus-vapor pressure liquid phase (1) 71 ^'•^7 . (4)327 (6) 591 liquid water (5) 449 nanoabrasive particles (8) 872 photocapacitance (6)591 liquid-crystal display. (6) 610 nanoindentation (10) 958 photodetectors (DLl liquid-crystal polymers (3) 178 nanopattern (10)1112 photodiodes (3) 220, (7) 688, liquidus projection (9) 907 nanostructure (5)466 (7)710 liquidus temperature (9) 940 native point defects (4)321 photoemission (12)1353 Li M0O3 thin films (6) 615 Ni/Ge/Au (12)1357 photoemission spectroscopy lo’^i^-cycle fatigue (2) 142, nickel (2)152, (9) 907 . (8) 868 (5)456,(9)916. nickel substrate (5)494 photo-induced charge transfer LPCVD (5)361 NiSi., (5)466 . (5)351 LPD (12)1309 96.5An/3.5Ag (2) 142 photo-ionization spectroscopy LTCC. (3) 191 nitride (l)Ll . (12)1321 luminescence (7)776 nitrogen (5)351 photoluminescence (PL) (3) 234, n-on-p doides (7)710 (4) 244, (4) 316, (5) 42l7(7) 791, M novolak photoresist (7)749 (7)799 n-type GaAs (1)76 photonic effects (12) 1325 magnesium (2) 99 nucleation (3)227,(5)466 photoreflectance. (7)754 magnetron sputtering. (6)610 nucleation kinetics (11)1195 photovoltaic detectors (7) 726 material rate decay. (10) 1066 numerical modeling (7)677 physical vapor transport (5) 366, material-removal rate (10) 1022 (7)791 mechanical properties (8) 861, O piezoelectric field effects (5)384 (9)953,(11) 1292 pileup. (5) 529 MEMS. (5) 361 ohmic contact)s) (1)76,(5)340, PiN diodes (5) 370 mesa profile. (3) 209 (5) 416, (5) 500','(5) 506, (7) 811, p-i-n rectifier (5) 406 metal/GaAs interface (1) 76 (8)868, (9) 903 p-InGaN.77’"’7’”"’7" (4)313 metallic contacts (12) 1357 OMVPE. (4) 316 planar diodes (7)710 metallization. (6) 610, (8) 857 on-machine measurement planarization. (4) 272 metallization reliability (5)472 (10)1032 plasma. (iO) 1104 metalorganic chemical vapor 1/f noise (7)677,(7)699, plasma deposition (10) 1096 deposition (MOCVD) (1)88, (8)831 plasma-induced damage , (10)994 (3)234, (5)406,(7) 811. optical. (11) 1160 plastic material. (5) 449 metalorganic vapor phase epitaxy optical glass grinding (10) 1039 platinum. (5) 506, (il) 1175 (MOVPE) (5)395,(5)421, optical properties (6) 615 point defects. (2) 113 (7)785 optical transmission (7) 795 polarization (5) 416 metal-semiconductor optical-absorption cross section polycide. (10)988 contact. (12) 1362 .. (7) 802 polyimide (1)82 metamorphic (3) 196 optical-emission spectroscopy polyimide films (4)239 methysilane (12) 1341 (OES). (10)994 polymetal gate (10)988 micromachining (10) 1032 orbital interaction (3) 185 popcorn (5) 449 micro-Raman spectroscopy (6)631 organic polymer. (5) 512 porous pad. (iO) 1022 micro-Raman study. (10) 1112 orientation imaging microscopy post-annealing (5) 529 microstructure (2) 161, (OIM). (1)23,(1)50,(1)66 power semiconductor devices (10) 1032,(10) 1122,(11) 1190 oxidation (1) 71, (4) 298, . (6)635 microwave annealing. (3)214 (5) 529, (i())ib74" precipitation strengthening (5) 442 mid-infrared laser. (7)806 oxide. (5) 356 prelayers. (3)234 mid-infrared solid-state oxide layer. (10) 1104 printed wiring boards (11) 1208 laser. (7) 795 oxide/InP. (12) 1309 process integration (10) 988 MIS structures (5) 395 oxidizing reagent. (2) 108 production method (11) 1270 mode-locked laser (7) 759 oxygen. (2)99 proton irradiation effects (5) 437 1 pseudomornhic (8)841 silicon carbide (SiC) (3) 200, (SSMBE) (2)95,(8)841 Pt-Co (10)965 (3) 209, (5) 380, (5) 346, (5) 361, solid-state laser (7)759 P-type. (7) 799 (6)568,(12) 1353 solidus temperature (9)940 p-type doping (7) 660,(7) 705, SiC diodes (6)635 specific contact resistance (7)715 SiCN (12)1341 (5)416,(5)506,(9)903 1 p-type SiC (5) 506 sidewall-aspect ratio (7)822 spectroscopic ellipsometry pull-out test (12)1347 SiGe (5)529,(12)1325 (7)664,(7)688 silicon piezoresistive sensor (8) 887 spike annealing (10) 981, (10) 999 Q silver (9)933,(11)1139 sputtering (1)2. (9)L11, 1 silver salt (4)239 (10)1074 Q-factor (3)191 silver-copper-tin (2)161 stacking fault (5)370 quantum theory (3) 185 single phase (5) 506 staggered band lineup (2) 95 quartz crystal microbalance SiO,. (2) 108 steady-state regime (5)512 (10) 1096 6H-SiC (5) 336, (5) 376 step soldering (6)557 slurrv (10)1059 strain (7)732 R small grain formation (2)142 strain-induced diffusion (5)529 Sn dendrites (11)1166 stress (iO)1080 rare earth (10)1122 Sn/3.5Ag (5)478 stress-induced supercooling/ j rare earth additions (6) 564 Sn/Ag/Cu (11)1130 superheating (3)227 rare-earth ions (7) 776 Sn-20In-2.8Ag solder (9) 953 stress-strain behavior (il)1181 RC delay (10)988 Sn-3.5Ag (5)456 stripping (11)1230 reflow (10)1117 Sn-3.5Ag solder (11)1203 subsurface damage (10)1112 reflow atmosphere (11)1130 Sn-3Ag-0.5Cu (5)456 sulfur passivation (1)71 reflow soldering (6)576 Sn-3Ag-0.5Cu-lBi (5)456 superlattice disordering .. (5)384 relativistic DV-Xa calculation Sn-3Ag-0.5Cu-3Bi (5)456 surface Fermi level (9)903 (3)185 Sn-8Zn-3Bi solder (5)494 surface finish (6)584 reliability (11)1203 Sn-9Zn lead-free solder . (9)921 surface morphology .. (3)234, reliability physics (10)1052 Sn-Ag (11)1152,(11)1181, (5)376 remote plasma nitridation (11)1292 surface mount technology (RPN) (2)124 Sn-Ag based (9)946 (SMT) (2) 136 remote sensing (7)726 Sn-Ag eutectic solder (11)1166 surface tension (11)1139, residual stress (8)887 Sn-Ag solder (11)1304 (11)1225 resistance (1) 10 Sn-Ag-Bi (11)1292 surface treatment (10)1047, resistivity (5) 366, (8) 857 Sn-Ag-Bi solder (6)564 (12)1353 resonator (3)191 Sn-Ag-Cu (6) 584, (8) 879, SWIR . (7)720 RF-bias sputtering (10)1009 (10) 1122,(11) 1292 RIE (7)652,(7) 743 Sn-Ag-Cu solder (11) 1166, T rosin-based active flux (9) 921 (11)1256 RTCVD (12) 1341 Sn-Ag-Cu-Bi (8)879 tantalum (1)2,(8)848 1 Sn-based solder (3) 185 tantalum silicide (10)1074 S Sn-Bi (5)545 Te antisites (7) 720 Sn-In-Sb (11)1276 Te clusters (7)799 sacrificial oxidation (5)380 Sn-Pb eutectic (11)1270 TEM (1)88,(5)391,(5)506, I sapphire (0001) (6)631 Sn-Pb plating (6)551 (12)1357 Schottky barrier) s) (9) 903, SnPb solder (6)576 temperature (10)1080 (12) 1353 Sn-Sb (11)1276 temperature control .. (10)981 Schottky barrier enhancement SnSb solder (2) 136 tensile strength (9)921,(9)928 (12) 1330 Sn-Zn (8) 861, (9) 940 termination .... (2) 136 Schottky contacts i (l)Ll, (12) 1362 Sn-Zn-Ag (8)861 texture (1)2,(1)55,(10)1009, Schottky diodes (2) 119, (10) 1090 solar cells (10)972 (11)1250 Schottkv-barrier height (5) 406, solder(s) (4) 253, (8) 879, thermal aging .... (8) 895 (12)1362 (9)933, (9) 946,(11) 1160, thermal conductivity (3) 196, Schottky-barrier rectifier (5) 406 (11) 1244,(11) 1250,(11) 1264 (5)366 secondary ion mass spectrometry solder alloy. (4) 278 thermal cycling. (9) 933 (SIMS).... (2) 124, (5) 366, (5) 376 solder ball. (11) 1130 thermal diffusion. (5) 376 seed aging. (10) 1047 solder interfacial reaction (5) 520 thermal resistance. (4) 286 seeded sublimation. (5) 366 solder joint(s) (4) 265, (11) 1152, thermal stability. (5) 506 segregation. (4) 278 (11) 1181,(11) 1238,(11) 1264, thermodynamic modeling . .. (4)321 semiconductor)s).... (3) 200, (4) 321 (11)1292 thermodynamics (6) 557, (12) 1330 semiconductor contacts ... (12) 1330 solder paste (11)1130 thermoelectric heating. (5) 535 shear strength. (4) 265 solderability (9)921 thermoelectric properties .... (4) 298 sheet resistance. (10) 1074 soldering (6)640 thermomechanical cycling ... (4) 253 shielding effectiveness. (3) 178 soldering reaction (5)488 thermomechanical fatigue short length effect (iO) 1052 solder-joint strength (8)895 (4) 292, (4) 286, (9) 946, silicon (1) 33,"(2) 113, (5) 466, solid solubility (3)21 (il) "1152 (5)5()6, (ib) 972 solidification (5)545 thickness. (4) 298 Si. Ge (5)500 solid-source molecular beam epitaxy thin film thickness (8)848 1378 thin filni(s) (1)55,(7)811, wetting behavior (10)1047 (10)958,(10)965 U wetting force (9)940 thin-filni transistor ... (5)512, wetting time (9) 940 (6)610 ultra-shallow junctions whisker formation (1)45 threading' dislocations (1)88 (3)21,(10) 981 wide bandgap (3)200 three-dimensional study under bump metallurgy (UBM) wide bandgap material (7)811 (10)965 (5)478, (5)520,(11) 1175, wide bandgap semiconductor (7) 776 3MS (5)361 (11) 1230,(11) 1256 wirebonding (12)1316 Ti underlayer (iO)1009 underfill (4)253 within-wafer-non-uniformity tin (9)907,(11)1139,(11) 1195 UV (l)Ll (WIWNU) (10)1066 tin coating (11)1283 UV laser (4)239 tin-copper lead-free alloy (9)928 X TLM technique (5)346 V transient regime (5)512 x-ray diffraction (XRD) (5)421, transition-metal ion (7)759 valence-band discontinuity (6)597 transition-metal laser (7)806 (4)313 x-ray photoelectron spectroscopy transmutation (7)705 vapor pressure (12)1337 (5) 376, (5)380,(10) 1080 traps (i2)1321 V-defects (1)88 x-ray reflectivity (5) 395, (8) 848 tribolog>' (8) 872, (10) 1016 viscoelastic pad effects (10)1066 TRIM (1)33 VLWIR HgCdTe (7)699 Z trimethylaluminum (12)1337 VUV-assisted oxidation (12)1325 trimethylgallium (12)1337 0.2% proof stress (9)921 tunable mid-IR solid-state lasers W zinc oxide (ZnO) (7) 776,(7)811, (7)791 (8)868 tunable solid-state lasers (7)802 wafer bonding (2)113 Zn doping (4)244 tungsten (10)988 wafer scale analysis (10) 1066 Zn partial pressure (8) 834 turning-EDM hybrid machining wafer-to-wafer-nonuniformity ZnCdSe (4)316 (10)1032 (WTWNU) (10)1066 ZnS (7) 743, (7) 770 two-color detectors .... (7) 669 weakest link approximation ZnSe (7)799 tj'pe conversion (7)652,(7)738, . (10) 1052 ZnSerCr (7)770 (7)743 wettability. (3) 185,(9)940

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Journal of Electronic Materials 2002: Vol 31 Index PDF

11 Pages·2002·2.7 MB·English
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Indexes to Journal of ELECTRONIC MATERIALS Vol. 31, January-December 2002 Author Index A Boettinger, W.J.. (5) 545 Cho, C.-L.. . (5)520 Bohm, J.. (1)45 Choi, H.J. . (3)209 Abernathy, C.R. .... (5) 336, (5) 411, Boieriu, P. . (7) 694 Choi, S.. . (4)292,(9)946 (5)437 Bok, K.-S.. (5) 520 Choi, W.K.. (11) 1283, (11) 1292 Adetunji, 0.0.. (7) 795, (7) 802 Bornfreund, R.E.. (7) 815 Choi, W.-S. . (5)520 Agarwal, A. . (10)999 Bourdelle, K.K.. (10) 999 Chou, D.-W. . (1)71 Agarwal, S.K.. (3) 234 Boyd, I.W.. (12) 1325 Chou, H.W. . (2) 129 Agata, Y..H (7) 785 Boyd,P.R.. (7)749,(7)822 Chow, P.P. . (4)437 Ager, J.W.. (7)754 Brandes, G.R.. (5) 402 Chow, T.P. . (5)356 Agraharam, S.. (10) 1096 Broitman, E.. (9) Lll Chowdhurv, U. . (5)406 Ahat, S.. (2) 136 Brown, A.S.. (2) 95, (8) 841 Choy, J.-H. .. . (10)988 Ahlgren, W.L.. (3) 220 Brunell, I.. (9) Lll Chsherbatchev, K.D. (5) 384 Alam, A.. (12) 1321 Bublik, V.T..^.1 (5) 384 Chu, M.... . (7)720 Alam, M.O.. (10) 1117 Buell, A.A.. (7) 815 Chu, S.N.G. . (5)336,(5)411 Allen, S.. (2) 161 Burger, A.. (7)791,(7)795, Chuang, T.H. (3) 171,(5)488, Allums, K.K.. (5) 437 (7)802 (5) 494, (6) 640 Almeida, L.A.. (7) 660, (7) 669, Busbee, J.D.. (10) 1112 Chugh, R. . (5)535 (7)732,(7)822 Chung, C.L.. . (11)1203 Alok, D.. (5) 356 C Chung, D.D.L. (5)535,(6)646, Al-Shareef, H.N. . (2) 124 (9)933 An, S.Y.. (7)683 Cabral, C., Jr.. (6) 597 Chung, K.H. . (6)610 Anderson, I.E. (11) 1166, (11) 1190 Cai, X.. (5) 449 Chung, M.-S. . (5) 500 Anderson, W.A. .... . (5)466 Capano, M.. (5) 335 Clarke, R.D. . . (5)346 Antoszewski, J. .... .. (7)652,(7)743 Carius, R.. (12) 1321 Conrad, H.. . (4)305 Aqariden, F. .. . (7)715 Carrig, T.J.. (7) 759 Contestable-Gilkes, D. (10) 1047 Arias, J.M. . (7)726 Carter, C.H., Jr.. (5) 366 Cook, B.A.. (11)1166,(11)1190 Arnold, E. . (5)356 Chada, S.. (11) 1129 Craciun, V. . (12)1325 Arra, M. . (11)1130 Chae, G.S. . (8) 857 Creighton, J.R. . (12)1337 Arthur, S.D. .. (5)370,(7)827 Chaldyshev, V.V. . (6) 631 Cui, Y.. . (7)791,(7)795 Arzt, E. .. . . (1)45 Chan, Y.C.. (10 1117 Augur, R.A. . (1) 10,(10) 1004 Chandra, A..... (10) 1022, (10) 1066 D Aumer, M.E. . (DLl Chandra, D.. (7) 715 Ayyildiz, E.. . (2)119 Chang, C.M.. (8) 895 d’Heurle, F.M. . (6) 597 Chang, C.-N. . (12)1341 D’Souza, A.I. . (7)699,(7)726 B Chang, H.-S.. (11) 1203 Dabiran, A.M. . (5)437 Chang, S.Y.. (6) 640 Davis, R.F. . (5)421 Bac, A.G.. . (5)437 Chang, T.C.. (5) 500 de Bruin, J.B. . (3) 220 Bahr, D.F. . (1)66 Chang, Y.A.. (12) 1330 de Lyon, T.J. . (3)220,(7)688 Bai, L.. . (7)770 Chattopadhyay, K.. (7) 802 Dean, N.F. . (11)1244 Bailey, S.L.. . (7)688 Chatty, K.. (5) 356 Dell, J.M.... . . (7)651,(7)743 Bajaj, J. . . (7)726 Chaurasia, A.R.. (1) L7 Denyszyn, J.C.. . (5)406 Bakhru, H. . . (8)848 Chawda, S.G. . (10) 999 Derenge, M.A.. . (6) 568 Balakrisnan, B..... . (11)1256 Chen, C.C.. (2) 129 Desalvo, G.. . (5)346 Balasubramanian, T.. (12)1353 Chen, C.-Y.. (2) 129 Dewames, R.E. . (7)699,(7)726 Balk, T.J... . (1)45 Chen, K.C.. (11) 1181 Dhanasekaran, R. . (3)227 Bando, Y. . (5)391 Chen, K.-I.. (8) 861 Dhar, N.K.. . (7)651 Baneriee, S. . (3)214 Chen, K.-T.. (7) 791 Dieng, L.M. . . (10)1074 Barnat, E. . (8)848 Chen, S.-W.. (2) 152, (9) 907 Dinan, J.H. (7) 669,(7)705, Barnett, C.... . . (7)791 Chen, W.T. . (11) 1256 (7) 732,(7) 749,(7)822 Bastawros, A. . (10)1022 Chen, Y.. (7)694 Dozsa, L. . . . (2)113 Bedair, S.M. . (DLl Chen, Z.. (6) 564 Dravin, V.A. . (5)384 Beeman, J.W. . (7)754 Chen, Z.G.. (10) 1122 Dresselhaus, M.S.. . (4)298 Belas, E. . (7)738 Cheng, L.. (5) 361 Drexler, E.S.... . . (4)286 Benson, J.D. , (7)669,(7)732, Cheng, M.D.. (3) 171 Duh, J.-G. . (11)1230 (7) 749, (7) 822 Cheng, S.C.. (9) 940 Dupuis, R.D.. . (5)335,(5)406 Bhusari, D.. . (10)1080 Cheng, W.H.. (3) 178, (8) 895 Dusch, B.P. . (10)1080 Biber, M.. . (12)1362 Cheng, Z.. (5) 449 Dutta, 1.. . (4)253 Bidstrup Allen, S.A.. (10) 1096 Chi, C.-S.. (11) 1203 Dwivedi, R. . (5)437 Bieler, T.R. (4)292,(9)946, Chiang, H.-C.. (12) 1341 (11)1152 Chinthakindi, A.K.. (10) 1080 E Bielmann, M. .. (12)1316 Chiou, B.-S.. (1)82,(5)472 Biller, B.C. . (5)535 Chirila, M.. (7) 770 Edwall, D.D. . (7) 726, (7) 664, Bilyk, M. . . (8)831 Chiu, M.Y.. (5) 494 (7)669 Blaschke, V.A. . (10)1052 Chiu, S.K.. (3) 178 Einfeldt, S.. . (5)421 Bluiett, A.G. . (7)806 Cho, B.S.. (6)610,(8)857 Eisenbach. A. . (5)395 1369 1370 Eldridge, G.. (5) 346 Grief, M. . (10)1059 Hutin, O.. (11) 1270 Emanetoglu, N.W.. (7) 811 Grigorov, S.N. . (4)298 Hwang, S.-Y.. (11) 1304 Emirov, Y.. (5) 380 Grill, R.. . (7)738 Erickson, J.W.. (5) 506 Grillot, P.N. . (2) 99 I Ervin, M.H.. (6) 568 Grdning, P. . (12)1316 Eyink, K.G.. (10) 1112 Grow, J. . (10)1074 Ichimura, S. ... (2) 108 Gu, Y. . (7)799 Ingerly, D.. (12)1330 F Guliants, E.A. . (5)466 Inohana, Y.. (11)1139 Guo, F. . . (9)946 Isaacs-Smith, T ... (6) 635 Faleev, N.N. . (5)384 Guo, S.P. . (7)799 Ishida, K.. (11)1139 Fan, Y.F. . (10) 1122 Guo, Y.. . (10) 1022 Ishiguro, T.. ... (7) 785 Fang, Y.-K.. . (2) 129, (5) 500, Guoli, M..... . (8)834 Ivanov, D.. (10)1074 (12)1341 Gurgenian, H.K. . . (7)720 Faraone, L.. ... . (7)651,(7)743 Gutmann, R.J. . (5)356 J Fatemi, M. . (5)370,(7)827 Fathima, K.. . . (10)1039 H Jack, M.D.. (7) 688 Federov, A.G. . ... (4)298 Jackson, M.D.. (2) 124 Fedison, J.B. .. . (5)370,(7)827 Haakenaasen, R. . (7)710 Jadwisienczak, W.M.. (7) 776 Fejes, P. . (12)1357 Habard, A.F. . (5)336 Jang, H.W. .(8) 868 Feng, S. . (7)811 Haller, E.E. . (7)754 Jang,J.-S.. (9)903 Feng, W. . (3)185 Han, S.S. . (10)965 Jang, S.-Y.. (5) 478 Ferguson, I.T.. . (6)631,(9)903 Han, S.-Y. . (3)209 Jang, T.. (5)506 Field, D.P. . (1)1, (1)40 Handwerker, C.A. . (5)545 Jantunen, H.. (3) 191 Fine, M.E. (11) 1195,(11) 1238, Hark, S.K. . (4)316 Jasinski, J.. (5) 429 (11)1276 Harper, J.M.E..... . (6)597 Javorka, P.. (12) 1321 Fiory, A.T. .. (10)981,(10)999, Harrell, W.R. . (10) 1090 Jenny, J.R. . (5) 366 (10)1074 Harringa. J.L. . (11) 1166, Jensen, J.E.. (3) 220, (7) 688 Flynn, J. . (5)402 (11)1190 Jeon, C.M.. (8) 868 Fogarty, T.N.... . (5)437 Havemann, R.H. . . (1) 10, Jeon, Y.-D.. (5) 520 Foran, B.. . (1) 10 (10)1052 Jeong, C.O.. (6) 610 Fox, A. . (12)1321 Hebard, A.F. . (5)411 Jeong, J.S.. (50 529 Franc, J. . (7)738 Hellgren, N. . (9)L11 Jeong, S.W.. (6) 557 Frank, A. . (1) 10 Hess, D.W. . (10)1096 Ji, C. . (5) 466 Frear, D. . (11)1129 Heuken, M. . (12)1321 Jiang, Q.-T. . (1) 1, (1) 10, Fu, G..... . (10)1066 Hildebrandt, G.... . (7)726 (10)1004 Hjort, K. . . (2)113 Jiang, Y.. (8) 887 G Ho, C.E. (6)584,(11) 1264 Jin, L.. (10) 1074 Ho, F.C. . (2) 129 Jin, S.. (11) 1129,(11) 1160 Gagliano, R.A.. . (11)1195, Ho, J.-J. (2) 129,(12) 1341 Johansson, L.I.. (12) 1353 (11)1238 Ho, P.S. (6)610,(10) 1052 Johnson, J.W.. (5) 437 Gan, D. . (6)610 Hobgood, H.M. . (5) 366 Johnson, S.M.. (7)815 Ganguly, S.. . (3)214 Hoi, Y.M. . (5)535 Johnson, V.A.. (7) 802 Gao, Y. . (5)376 Holland, O.W. . (6) 568 Jones, K.A.. (6) 568 Gao, Y.H. . (5) 391 Hdmmerich, U. . (7)806 Jordan-Sweet, J.L.. (6) 597 Gasior, W. (11) 1139,(11) 1225 Hong, S.-M. . . (10) 1104 Jou, W.S..(3) 178 Gessmann, Th. . (5)416 Hopp, B. . (4) 239 Jozwikowska, A.. (7) 677 Ghosh, G. (11) 1195,(11) 1238 Hoschl, P. . (7)738 Jozwikowski, K.. (7) 677 Giannuzzi, L.A. . (1)33 Hough, E.C. . (1)33 Jung, J.-P..^^ (io) 1104 Gil, G.S. . (10)988 Houng, M.-P. . (1)71 Giles, N.C. . (7)770 Hozhabri, N. . (1)L7 Gillespie, P. . (10) 1004 Hsieh, K.C. (8)895,(11) 1203 Gians, P.-A. . (12)1353 Hsieh, M.-C. . (12) 1341 Kainuma, R.. (11) 1139 Glass, R.C. . (5)366 Hsieh, W.-T . (12)1341 Kaleczyc, A.W. . (7) 822 Gokce, 0. . (10)1074 Huang, C.J. . (12) 1309 Kaltenpoth, G.. (5) 449 (Jolan, Y. . (1)88 Huang, C.-S. . (11) 1230 Kanchanomai, C. ... (2) 142, (5) 456 Golding, T.D.... . (7)705 Huang, C.-Y. . (2) 152 Kang, B.J.. (6)610,(8)857 Goldstein, J.T.. . (7)791 Huang, D. . (2) 129 Kang, C.-S.. (10) 1104 Gopinath, A..... . (4)253 Huang, J.-W. . (2) 99 Kang, J.S.. (11) 1238 Gossard, A.C. .. . (3)196 Huang, M.L. . (5)442 Kang, S.H.. (10)957,(11) 1129 Gossmann, H.-J.L. (10) 999 Huang, W. .. (5)449,(8)887 Kang, S.K.. (11) 1283, (11) 1292 Gou, S.P. . (6)631 Hubbard, S.M. . (5)395 Kanicki, J.. (5) 512 Govorkov, A.V. , . (5)384 Huff, H.R. . (2) 124 Kao, C.R.. (6)584,(11) 1129, Graetz, E. . (3)214 Huffman, L. . (9)L11 (11) 1264 Graff, J.W. . (5)416 Hung, H. . (1)82 Kar, A.. (3) 200 Graff, M. . (11)1270 Hung, K.C. . (10)1117 Karamcheti, A.. (2) 124 Graxulis, L. . (10)1112 Hunter, A.T. . (7)688 Kasai, I.. (3) 220 Grayson, B.A.... . (5)380 Hussain, Z. . (6)615 Katulka, G..’ (5) 346 1371 Kawauchi, Y. . (7)785 Lee, H.M. (6) 557,(10)965 Martin, S. . (5)512 Kempf, B. (4)278,(11) 1270 Lee, J.G. ... (4) 292, (6) 610, (8) 857, Martinka, M. (7) 732, (7) 749, Kempshall, B.W. . (1)33 (9)946,(11) 1152,(11) 1181 (7)822 Kim, C.-U. . (10)1004 Lee, J.-H. (6)576,(11) 1175 Mason. W. . (7)669 Kim, C.W. . (6)610 Lee, J.-L. .. (3)209,(8)868 Masuda, Y. . . . (7)785 Kim, H.G. . (10)965 Lee, J.-W. . (11)1304 Matsuhashi, H. . (10)1052 Kim, H.K. . (5)529 Lee, J.Y... . (5)529 Matteson, T.L. . (1)33 Kim, H.S.... . (5)529 Lee, K.-D. . . (10) 1052 Matveen, V.N. . (1)40 Kim, J.H. . (6)557 Lee, K.P. .. (5)336,(5)411 Mavoori, H. .. . (11)1160 Kim, J.K. . (8)868 Lee, S.-K. . (5)340 McCabe, R.J. . . (11)1276 Kim, J.S. . (7)683 Lee, S.L. . (8)848 McCov, S.P. . (10)999 Kim, K.D. . (9)933 Lee, W.H.. .. (6)610,(8)857 McKinley, J.M. . (10)999 Kim, S.G. . (6)610 Lee, W.J. . (2)129 Meesham, R. . (5)346 Kim, S.J. . (4)244 Lee, Y.-H. (4)244,(11) 1175 Mehta, V.R.. (10) 999. (10) 1074 Kim, S.Y. . (8)868 Lee, Z.-H.. . (11) 1304 Mei, S. . (2) 136 Kim, T.-H. . . (2) 95 LeFran^ois, M.E.. . (10)999 Merchant. S.M. . (10)1047 Kim, Y.-H. . (10) 1009 Lepistd, T. . . (11) 1130 Merrett, J.N. . (6)635 Kim, Y.M. . (3)196 Leppavuori, S. . (3) 191 Mesrooian. S. . (7)720 Kim, Y.-S. (6)576,(11) 1175 Lewis, D. . (2)161 Metzger, R.A. . (8)841 Kinck, M.A. .. . (7)715 Li, H.-J.. . (3)214 Mevler. B. . (1)88 King, D.F... . (7)815 Li, J.-B.. . (4)321 Michael, N.L. . (10)1004 Kirchner, K.W.... . (6)568 Li, M.. . (11)1256 Michaluk, C.A. . (1)2 Kirichenko, T. . (3)214 Li, S.. . (9)916 MilVidskii, M.G. . (5) 384 Ko, Y.K. ... (6)610,(8)857 Li, Y.-L.. . (5)416 Minor. A.M. . (10)958 Kobayashi, N. . (4)313 Lianer, H.. .. (4)272,(8)872 Miotkowski, 1. . (7)754 Kocsis, Z. . (4)239 Liliental-Weber, Z. (5)391. Miraglia, P.M. . (5)421 ■ Kohl, P.A.. (10) 1080, (10) 1096 (5)429 Mivashita, Y. (2) 142,(5)456, Kohli, P. . (3)214 Lilleodden, E.T.... . (10)958 (8)879 Kohlscheen, J. . (5)380 Lim, H.S.. (10) 1032,(10) 1039 Mo, Z.. . (9)916 Koike, K. . (2)108 Lim, T.S... . (5)529 Moizes, I.. . (4)239 Kolodzey, J. . (5)346 Lin, C.-F. . (12) 1330 Mdnig. R. . (1)45 Kong, S.-M. . (3)209 Lin, C.-H. . (9) 907 Moon, D.W. . (5)529 Kononenko, O.V. . (1)40 Lin, C.-S. . (12) 1341 Moore. F. . (7)726 Konovalov, V.V. . (5)351 Lin. K.-L. .. (8)861,(9)940 Morasch, K.R. . (1)66 Koo, S.-M. . . (5)340 Lin, W.. . (7)799 Moravec, P. . (7)738 Kordos, P. . . (12)1321 Lin, W.-T. . . (5)500 Morinaga. M. . (3) 185 Kosai, K.. . (3)220 Lin, Y.L. . (6) 584 Morishita. H. . (7)785 Kovacs, B.. . (4)239 Lita, A.E..... . (1)55 Morris, J.W., Jr. . (10)958 Ksiezarek, S. . (11)1225 Littler, C.L. . (7) 705 Morrow, K. . (7)802 Ku, T.-M. .. . (8)848 Liu, J.. . (9)916 Moser, Z.. (11)1139,(11)1225 1 Kuang, J.H. . . (8)895 Liu, X.J.. . (11) 1139 Mu, N... . (6)564 Kumakura, K. . (4)313 Liu, Z.. . (6) 646 Mudra, 1.. . (4)239 Kumar, A... (8)848,(10) 1016 Lorentzen, T. . (7)710 Muller. St.G. . (5)366 Kurokawa, A. . (2)108 Lou, R.-F.. . (1)71 Murakami, M.. . (1)76 Kuskovsky, I.L.... . (7) 799 Lozykowski, H. J... . (7)776 Musca, C.A.. (7)651,(7)743 Kutcher, S.W. . (7)806 Lu, Y. . (7)811 Muth, J.F.. . (DLl Kuzma, M. . (8)831 Lucas, J.P. ... .. (4)292,(9)946 Muthukumar, S. . (7)811 Kyung, K.M.. . (10)988 Luo, B. .. . (5)437 Mutoh, Y.. (2) 142, (5) 456, Luo. L. . (8)887 (8)879 L Luo, T.Y... . . (2) 124 Myers. T.H. . (7)770 Luo, X.. . (5)535 Lai, Z. . (9)916 Luth, H.. . (12) 1321 N Lalena, J.N.. . (11)1244 Luttmer. J.D. . (1) 10 i Lambracht, P. ... . (4)278 Nahm, J.-Y. . . . (5)512 i Lan, E.. . (12)1357 M Nakamura, K.. . (2) 108 j Larsen, W. . (7)669 Nakazawa, S. . (1)14 i Laursen, T. . (10)1059 Macak, E.B.. . (12) 1353 Nasedkin, K.A.. . (4) 298 Lavoie, C. . (6)597 Madishettv. S. . (10)999 Nashchekina, O.N. . (4) 298 Law, C.M.T. ... (9)921,(9)928 Madsen, L.D.. . (12)1353 Nathan. V. . (7) 694 Le Mogne, T. . (8)872 Makimoto, T. . (4)313 Ndap,J.-0. . (7) 795, (7) 802 Le, H.. . (12)1357 Maksimov, 0. . (7)799 Neidhardt, J. . (9)L11 Le, L.. . (2)136 Mannan. S.L. . (8)879 Neumark, G.F... . . (7)799 1 Leboeuf, S.F.. . (DLl Maranowski, K.D. . (7)815 Newbury, B.. . (5)545 1 Lee, B.-T.. . (3)209 Marks, M.R. . (4)265 Ngo. M.. . (7)720 1 Lee, C.-R.. . (4)327 Marshall, C.. . (4)253 Nguyen, T.. . (7) 652 Lee, C.-W. . (9)903 Marso. M. . (12)1321 Nibur,K.A. .. . (1)66 Lee, D.L. . (7)664 Martin, J.-M. . (8)872 Nicholson, J.M. . (5)545 1372 Nishida, T. . (4)313 R Shevelev, M. . (3)214 Nishizawa, J. . (6)591 Shi, Y.... . (6)564 Norris, P.E. . (5)384 Rablau, C.I. . (7)802 Shi, Y.W. . (10)1122 Notis, M.. . (2)161 Radford, W.A. . (7)815 Shiau, L.C. . (11) 1264 Nowell, M.M. (1) 1,(1) 10,(1)23 Rahman, M..... (10) 1032, (10) 1039 Shieh, M.-C. . (12)1341 Nuho Lu, Q.. . (2) 119 Ramappa, D. . (10)1047 Shih, H.D. . (7)715 Ramasamy, P. . (3)227 Shim, P.B. . (10)988 O Ramdas, A. . (7)754 Shis, D.-Y.. (11) 1283, (11) 1292 Ramirez, A.G..... . (11)1160 Shlenskv, A.A. . (5)384 Obermayr, W. . (8)831 Ravindra. N.M. . (10)957, Shon, H.K. . (5)529 Ogawa, E.T. . (10)1052 (10)999,(10) 1074 Sikder. A.K. . (10)1016 Oh, M.. . (10) 1047 Ready, W.J. . (11)1208 Singh, M. . (3)234 Ohnuma, I. . (11)1139 Reber, J.C. . (10)1112 Singh, R.K. . (12)1325 Olson, G.L. . (7)688 Redfern, D.A. . (7)651 Sitter, H. . (7)738 Onishi, T. . (1) 14 Redwing, J. . (5)335 Sivananthan, S. . (7)651 Osinsky, A. . (5)384 Reed, M.J. . . (l)Ll Slifka, A.J. . (4) 286 Ostling, M. . (5)340 Ren, F. . (5)437 Smirnov. N.B. . (5)384 Overberg, M.E.... .... (5)336,(5)411 Rettenmayr, M... (4) 278, (11) 1270 Soh, H.S.. . (8)857 Ripka, G. .... . (4)239 Soloviev, S.I. . (5)376 P Ristolainen, E. . (11)1130 Song, J.Y. ... . (12)1347 Roberts, J.C. . (l)Ll Sopori, B. . . (10)972 Page, R.H. .. . (7) 802 Rodwell, M.J.W. . (3)196 Spariosu, K. . (7)669 Paik, K.-W. . (5)478 Roe, K.J. . (5)346 Spencer. M.G. . (6)568 Paik, K.-Y. . (5)520 Rogacheva, E.I. . (4)298 Srinivasan, T. . (3)234 Pal, R... . (7)743 Roealski, A. . (7)677 Sritharan, T. . (11)1250 Pan. M. . (5)361 Roh, N.S. . (6) 610 Stach, E.A. . (10)958 Pan, T.Y. . (5)545 Roskowski, A.M. . (5)421 Stahlbush. R.E. (5)370,(7)827 Parihar, V. . (1) 10 Roth, J.A.. . (7)688 Stapelbroek, M.G... . (7)699 Park, D.-S. . (10)1009 Rowland, L.B. (5) 370, (7) 827 Steckl, A.J. ... . (5)361 Park, H.S. . (6)610 Rov. U.N. * . (7)791 Steen, H. . (7)710 Park, I.S. . (12)1347 Ruffleux, P. .. . (12)1316 Steinbriichel, C. . (2)124 Park, J.C. . (10)988 Stockman, S.A. . (2)99 Park, J.-H. . (11)1175 S Stoltz, A.J. (7) 669, (7) 749, Park, J.K. . . (10)965 (8) 822 Park, S.I. . (10) 965 Saddow, S.E. . (5)380 Subramanian, K.N. . (4) 292, Park, S.-J. . (9) 903 Sakong, D.S. . (6)610 (9)946,(11) 1152,(11) 1181 I Park, W.I. . (8)868 Salama, LA. . (3)200 Sudan. P. . (12)1316 Parker, C.A. . (l)Ll Salzman, J. . (1)88 Sudarshan, T.S. . (5)376 Pasquaariello, D. . (2)113 Sanchez, J.E., Jr. .... . (1)55 Suganuma, K. . (6)551 Patel, B. . (7)776 Schaake, H.F. . (7)715 Suh, S.H. . (7)683 Pavlidis, D. . (5)395 Schlaf, R. . (5)380 Summers. J. . (8)848 Pearton, S.J. .. (5)336,^5)384, Schlapbach. L. . (12)1316 Sun, N... . . (6)564 (5)411,(5)437 Schubert, E.F. . (5)416 Sun, Z. . (8)887 Pelto, C. . (12)1330 Schwaller, P. . (12)1316 Sung, W.-L. . (5)472 Peterson, J.M. . (7)815 Schwarz, S.W. . (1)33 Suto, K. . (6)591 Phillips, J. . (7)726 Scofield, J. . (5)361 Swann. C.P. . (5)346 Phillips, J.D. . (7) 664 Scotch. A. . (2)161 Swartz, W. . (5)380 Piotrowski, J. . (7)743 Scott, T.L. . (10)994 Syversen, H.. . <1) 710 Poliak, F.H. . (6)631 Sentil Kumar. A. . (10)1032, Szentpali, B. . (2) 113 Polley, C.J. . (5)437 (10)1039 Polyakov, A.Y. . (5)384 Seo, D.W. . (7)683 T 1 Poole, K.F. . (10)1090 Seok, J.H. . (6)610 j; Pophristic, M. . (6)631 Seong, T.-Y. . (9) 903 Takaku, Y. .(11) 1139 Popov, G. . . (10)1074 Shah, P.B. . (6)568 Tamargo, M.C. . (7)799 1 Powell, A. . (5)366 Shah, R.T. . (7)806 Tanikella, R.V. . (10) 1096 1 Prakash, K.H. . (11)1250 Shangguan, D. . (11)1130 Tanno, T. . (6) 591 ' Preble, E.A. . (5)421 Sharma, S.C. . (1)L7 Tavrina, T.V. . (4)298 ! Prisbrey, K.A. . (10)994 Sheen, M.T. . (8)895 Tedenac, J.-C. . (4) 321 Proter, L.M. . (5) 506 Sheng, H. . (7)811 Telang,A.. (11)1152,(11)1181 - Pstrus, J.. (11) 1139, (11) 1225 Sheridan, D.C. . (6)635 Teng, H.C. . (8)895 ' Ptak, A.J. . (7)770 Sheu, J.K. . (5)416 Terpstra, R.L.. (11) 1166, (11) 1190 is Terterian, S. . (7)720 1 Q * Erroneously printed as N. Roy in Theodoropoulou, N. . (5)411, !; “Growth of Cr- and Co-Doped CdSe (5)336 1 ■ Quick, N.R. . (3)200 Crystals from High-Temperature Thirumavalavan, M . (3)234 1 Selenium Solutions,' J. Electron. Thomas, C. . (6)568 j Mater. 31 (7) (2002), p. 795. Thomas, M. (7) 669, (7) 749 ' 1 _ 1373 Ting, S.-F. . (12)1341 Wang, L. . (7)770,(7)770, Xie,Q.. . (12)1357 Tomita, Y. . (7)785 (9) 921, (9) 928 Xu, A.. . (7)776 Toth, A.L. . (7)738 Wang, M.-J. . (5)500 Xu, B. . (5)449 Trivedi, S.B. . (7) 806 Wang, S. .. (5)370,(7)827 Xu, G.H. . (4)272 Trosdahl-lversen, L. . (7)710 Wang, S.S.. . (3)171,(5)488, Xu, X.... . (5)402 Tsai, B.-Y. . (2)129 (5) 494, (6) 640 Tsai, R.Y. . (6)584 Wang, X. . (9)916 Y Tsair, Y.-S. ... . (12)1341 Wang, Y.-H. . (1)71 Tschudin, C. . (4) 278 Wanqi, J. . (8)834 Yamashita, M. . (6)551 Tsunoda, Y. . (1)76 Want, T. . (9)916 Yan, B. . (10) 1022 Tsvetkov, V.F. . (5)366 Watson, K.M. . (1)L7 Yang. D. . (4) 304 Turbini, L.J. . (11) 1208 Watt, V.H.C.. . (2) 124 Yang, H.J. .. (6)610,(8)857 Turunen, A. . (3) 191 Weidong, H. . . (2)136 Yang, S.-H. . (4)248 Turut, A.. (2) 119, (12) 1362 Weirauch, D.F. . (7)715 Yasuda, K. . (7)785 Tyagi, R.. . (3)234 Weiser, M.W. . (11)1129, Yeh, J.-H. . (11)1230 (11)1244 Yeh, M.S. . (9) 953 U White, J.K. . (7)743 Yeo, D.H. . . (4) 244 Wijewarnasuriva, P.S. (7) 699. Yi, C.. .... (2)95,(8)841 Uusimaki, A. . (3) 191 (7)726 Yi, G.-C. . (8)868 Wilkins, R. . (5)437 Yi, S.S. . (2) 99 V Williams, G.M. . (7)699 Yim, M.J. . (11)1292 Williams, J.R. . (6)635 Yoda, R. . (1)16 Valiaev, V. . (5)395 Wilson. R.G. . (5)336,(5)384, Yokoyama, M. . (4)248 Van Rheenen, A.D. . (7)710 (5)411 Yoon, K.H. . (4)244 VanMil, B.L. . (7) 770 Windover, D. . (8)848 Young, B.-L. . (11)1230 Varadarajan, E. .... . (3)227 Wolan, J.T. . (5)380 Young. R.B. . (10)994 Varesi, J.B. . (7)815 Wolf, J. . . (5)478 Yu, C.L. .. (5)488,(6)640 Vaudo, R.P. . (5) 402 Wolter. M. . (12)1321 Yu, D.Q. .. (9)921,(9)928 Venzor, G.M. . (3)220 Wong, K.S. . (4)316 Yu, J. .. . (12)1347 Virojanadara, C. . . (12) 1353 Wong, M.M. . (5)406 Yu, K.M. .. . (7)754 Virt, I.S. . (8)831 Wood, M.C. . (6)568 Yu,T.J... . . (6)591 Vispute, R.D. .... . (6) 568 Wowchack, A.M. .. . (5)437 Yujie, L.. . (8)834 Volkert, C.A. . (1)45 Wright, G..... . (7)795 Volobuev. V.V. . (4) 298 Wright, S.I..... . (1)50 Z Wu, C.M.L. . (5)442,(9)921, W (9)928 Zamir, S. . (1)88 Wu, F... . (1)88 Zandian, M.. . . (7)726 Wahab, Q..... . (12) 1353 Wu, J. . . (7)754 Zavada, J.M... .. (5)336,(5)411 Waldron, E.L. . (5)416 Wu, T.L. . (3) 178 Zetterling, C.-M. .. .. (5)335,(5)340 Walukiewicz, W. . (7)754 Zhang, F. . (11)1256 Wan, C.F. . (7)715 X Zhang, J. . (10) 1090 Wang, C. . (3) 185 Zhang, X.B.. . (4)316 Wang, C.C. (7) 720,(7)806 Xia, Z. . (6)564 Zhao. J. . (8)879 Wang, C.-H.. . (9) 907 Xia, Z.D. . (10)1122 Zheleva, T.S. . (6)568 Wang, H.-H. . (1)71 Xiaona, Z.. . (8)834 Zhu, T.G. . . (5)406 Zvanut, M.E.. (5) 351 Key Word Index A Ag-Sn intermetallic (6) 551 anneal(ing) (1) 10, (7) 694, (Ag-Sn)„„,+Cu additions (11) 1225 (8) 834, (8)857,(10) 1074, abnormal grain growth (1)40 aluminum (6)568,(10) 958, (12)1357 abrasive particle (10)1022 (10) 1080 annealing caps (6)568 acceptor diffusion (2)99 A1 contacts (10)1090 anodic oxidation (12)1362 acid etching (5)402 A1 thin films (10)1009 antisite atoms (6)591 acoustic emission (10)1016 Al-0.5wt.%Cu (1)55 APDs (3)234 activation (7) 694,(7)715 AlGalnP (2)99 arsenic (7) 694, (7) 705, (7) 715 activation energy .. (1)71,(4)244, AlGaN (5)406,(12) 1337 arsenic doping (7)660 (5) 442, (9) 953 AlGaN/GaN (5)437 asperity contact (10)1022 adduct (12)1337 AlGaN/GaN HEMT (12) 1321 atomic force microscopy (AFM) adhesion (12)1347 AlGaN/GaN superlattice (5) 384 (1)66, (5) 340,(5)376, Ag alloy. (6)610 AlInAs (2)95, (8) 841 (5) 380,(5)395, (5)421 Ag contacts (12)1316 alternative-substrate Au/n-Alj, jjGaQj-.NrSi diode (4)327 Ag thick films (3)171 HgCdTe (7)815 Au/Ni/Cu metallization (il)1264 Ag-epoxy. (6)551 aluminum nitride (5)395, (6) 568 Au/n-Si (2)119 aging. (9)928 amorphous (1)33,(10) 1117 Au/SiC (12)1353 1374 Au/Sn. (11) 1175 conductive adhesive (6) 551, (10)972,(10) 1047,(12) 1321 Au-Sb system. (6) 557 (9) 933 degradation mechanism. (9) 916 Au-Sb-Sn system (6)557 conductivity. (4)248 delamination. (5) 449 avalanche photodiodes. (7) 688 contact resistance (5) 346 density. (il) 1225 contacts. (i2) 1353 density-of-states. (5)512 B continuous-wave laser (7) 759 denudation (10)988 copper. (1) 16, (1)"33, (9) 907 detectors ....’I’’"""’ (3) 220, (7) 688 bake stability. (7) 743 copper interconnects (10) 1004, diazonaphthoquinone (7) 749 ball grid array (BGA). (il) 1203 (10) 1059 die attach. (11) 1244 band anticrossing. (7) 754 copper substrate. (11) 1195 dielectric. (10) 1096 band offset. (4) 313 copper thin films (10) 1047 dielectric material (3) 191 bandpass fiiter. (3) 191 CrCdMnTe . (7) 759 die-shear strength. (10) 1104 barrier height. (4) 327 Cr:CdSe . (7) 759 differential scanning calorimetry barrier layer (5) 472 Cr.-ZnS. . (7) 759 (DSC). (8)861,(11) 1283 Beer-Lambert law. (7) 795 CriZnSe. (7) 759 diffusion. (6) 551, (10) 1096 bimetallic films. (10) 1080 Cr^" ion.. (7) 806 diffusion barrier (10) 988 Blech effect.(10) 1052 Cr“":CdSe. (7)802 diffusion coefficient. (8) 834 bonding. (11) 1160 Cr^:CdSSe"’""‘""’^”"'‘^’’^^‘"‘ (7) 791 diffusional couples. (il) 1238 bonding stren^lis. (3) 171 crack initiation. ^2) i42, (5) 456 dilute magnetic semiconductors boron. (5)351 crack propagation .. (2) 142, (5) 456 . (5)411,(5)336 bump. (iO) 1104 creep (5)442,(8)879, diode-pumped solid-state laser Butler’s method. (11) 1225 (9)928,(iO) ii22 . (7)759 creep resistance (11) 1276 direct-write (3)200 C critical length effect. (10) 1052 dislocation density (5)402 cross slip. (4) 304 dislocation pile-up (4)304 calculation of phase diagram cross-hatch. (7) 732 dislocations. (5) 370,(8)831 . (11)1139 crosstrack infrared sounder (7) 726 dispersion strengthening (6)564 CALPHAD method. (6) 557 crystallization. (10) 1117 dopant interactions. (2) 99 capacitance-voltage. (12) 1353 crystallization quality. (8) 834 dopants (2)99 capacitance-voltage crystallographic orientation (1) 10 doping ..;;;;;"i7i694"r7r776,"(7) 811 characteristics (4) 313 crystallographic texture (1)40 doping mechanism (7) 785 carbon. (6) 568 c-Sij.^,^C^Ny."(12) 1341 DRAM. (10) 988 carbon fiber. (3) 178 coicindent site lattice (CSL) (1) 50 dry etching. "("7") "7’I38! ,(10)994 carbon nanotube. (5) 391 dual beam. (1) 33 carbon nitride (9) Lll Cu dissolution. (6) 576 dual damascene ( iO) 1052, carbon source. (12) 1341 Cu/ln interface. (5) 488 (10)1059 carrier transport (7) 652 Cu interconnects (iO) 1052 ductility-modified Coffin-Manson’s cathodoluminescence (4) 248, Cu(Mg) alloy.I"’!’’”!!’.... (8) 857 relationship. (5) 456 (5)384 (Cu,Ni)gSn5 ternary Cd/Hg. (7) 683 compound. (11) 1256 CdHgTe. (7) 710 Cu oxidation. (8) 872 CdTe .... (7) 743, (7) 749, (7) 785 Cu passivation. (8) 872 early failure. (10)1052 CdZnTe (7) 710, (7) 720, (7) 732, Cu reliability.. (iO) 1052 EBsp..(d 33 (7) 749, (7) 822, (8) 834 Cu thin films (1)40 edge termination. (6) 635 Ce and La rare earth elements CUgSn^.;;■”( 11) li95,"(i'i) 1304 elastic-light scattering (6)597 . (9)921,(9)928 Cu-low k dielectric. (5) 472 electric potential. (4) 272 chalcogeniide. (7) 759 curing."" (8) 887 electrical activation (10) 999 chemical diffusion (7) 738 curing process. (1) 82 electrical and optical properties chemical mechanical polishing current degradation. (5) 370 . (2)129 (CMP) (10) 1016, current duty ratio. (iO) 1039 electrical conductive adhesive (10) 1059, QO) 1066 current-voltage (12) 1353 . (9)916 chemical-mechanical planarization Cu-Sn.""’”"!!!!"!! (11) 1238 electrical properties (9) Lll, . (10)1022 Cu-Sn intermetaiiics. (11) 1166 (11) 1292 chlorine. (10)994 cutoff wavelength (7)664 electrical resistivity (7) 795, cobalt.1175 cvD.(5)36i (9)933, (11) 1190 . Co alloys. (6) 597 cycle dependent. (8)879 electrochemistry of Cu (8) 872 Co silicide. (6) 597 cyclotron. (3) 21 electrode effects. (3) 209 coarsening. (4) 253 electroless Ni. (5) 520 COB .."’I!’!""’.”""’" (8) 887 D electroless Ni-P (10) 1117, coefficient of friction. (iO) 1016 (11) 1230, (ll)i283. coefficient of thermal expansion damage characterization (4) 292 electroluminescence. (5) 370 . (10)1080 Damascene Cu line (1) 10 electromagnetic shielding (3) 178 composite solder. (11) 1304 data retention. (iO) 988 electromigration. (1)45, composition gradient. (7) 710 dc-pulsed magnetron sputtering (1)82, (5) 472,(10) 1052 composition ratio (4) 248 . (2) 129 electron backscatter diffraction compositionally modulated defect decoration (5) 402 (EBSD) (1)2, (1) 16, (1)23, superlattice. (4)316 defects.^""(S) 429,' (7) 732, .(1)33,(1)40,(1)50 electron cyclotron resonance Ge segregation (5) 500 (8)831 (ECR). (7)749,(7)822 glow discharge mass spectrometric InGaN. (1) LI, <4) 313, (5) 416 electron-beam moire (4) 286 (GDMS) (7) 795 InGaN/GaN heterostructure electronic. (5) 535 gold."(iO) 1080 (3)227 electronic devices (il) 1160 gold piating. (4) 265 InP.’ ' IS) 841 electronic mounting (3) 185 grain boundary shear. (4) 304 in-situ steam generation electroplated Ni. (il) 1283 grain growth (1) iO, (10) 965, (ISSG). (2i 124 electroplating. (5) 478, (10) 1047 (12)1357 in-situ TEM (10)958 ELID grinding (10) 1039 grain size (1)2, (1)10, In-Sn.'2) 152 elongation. (9)921 (4) 304, (ibVbss. interconnections (1)16 embedded passive (4) 286 interconnects (10) 1047 EMI."""”’’11 (5)535 H interface diffusion (10)1004 emission lifetime (7) 802 interface electromigration emissivity (10) 981 R, plasma treatment. (12) 1316 . (10)1004 epitaxial films. (4) 298 hafnium (5) 500 interface-fracture energ\’ (12) 1347 epoxy (9)933 Hall.(5)356 interface intermetallics (11) 1250 EPR.."""’!"’"I'"!"’”(’5’)”35X (5) 366 hardness. (1) 66 interface reaction (11) 1175, equivalent oxide thickness heat dissipation. (5) 535 (11)1203 (EOT). (2) 124 heat treatment , (6) 59i, (11) 1190 interface states. (2) 119 erosion. (io) 1059 heteroepitaxial. (5)466 interface traps (5) 356 eutectic (2) 161 heterojunction bipolar transistor interfacial reaction)s) (2) 152, eutectic Sn-Ag solder (4) 292 (HBT). (2) 95, (3) 196, (8) 841 (6)584,(11)1256,(liTl283 eutectic Sn-Cu (5)442 heterojunction diode. (4) 313 interfacial tension (3) 227 heterostructures (7) 694 intergranular creep fracture F HgCdTe (3) 220,T7)"652,‘ (7) 660, . (9)953 (7) 664, (7) 669, (7) 683, (7) 688, interlayer (5)506 fatigue-crack growth (8) 879 (7) 694, (7) 705, (7) 710, (7) 715, intermetallic compound)s) (IMC) Fe;ZnSe.(7) 759 (7) 720, (7) 726, (7) 732, (7) 738, (3) 171,(4)265,(5)478, ferromagnetism (5)411 (7) 743,(7) 749,(7) 815,(7) 822, (5)'488,T5) 494, (6) 640, (10) 1117, FIB.(1)33 (8) 831 (11) 1230,(11)1292 FIB damage. (1) 33 HgCdTe heterostructure devices intermetallic diffusion (10) 1080 fiber orientation. (3) 178 (7)677 intermetallic) s) (9)940,(11) 1264, field-effect mobility (5)512 H^dfe/Si. (7) 815 (12) 1330 filament formation. (11) 1208 high mobility transistor (5) 437 intersection of dislocations fillet lifting (5) 545 highly mismatched alloys ___ (7) 754 . (4)304 film. (9) Lll high-purity semi-insulating interstitial atoms (6) 591 finite-element method (8) 895 (HPSI). (5) 366 intrinsic defects. (5)351 flexible graphite (5) 535 high-resolution transmission iodine doping. (7) 785 flip chip .(4) 253" (5) 520, electron microscopy ion beam sample (5)478, (ib) ii64, (11) 1256 (HRTEM). (2) 124 preparation (1) 23 flux chemistry. (11) 1208 high-temperature solder. (6)557 ion implantation (5) 336, (5) 346, flux-free. (10) 1104 hillock formation (1)45 (5) 406, (5) 411,"(6) 568, (10) 981, form accuracy (10) 1032, HVPE.’H’'I"’"’"(5)429 (10)999 (10)1039 hydrogen etching. (5) 380 ion milling. (7) 710 4HSiC. (5)351,(5)340, hysteresis. (2) 124 IR permeability. (8) 834 (5) 356,(5)366,(10) 1090 isolation trench (7) 822 FPAs (7)720 I isothermal aging (4)265 fracture surface (10)1104 fresh Li (6)615 ICP-RIE (3)209 J friction-stimulated chemical wear idealitv factor (4)327,(5)406 (8)872 II-VI semiconductor (7)795, ioint (9)933 (7)806 joint microstructure (11)1166 G image quality (1)33 joint shear strength (11)1166 imidization (1)82 junction termination extension GaAs(OOl) (10)1112 implantation (7)754 (6)635 GaAs/Ge (3)234 impurities (5)351,(10)972 GaAsSb (2) 95 In-46Sn/Cu (6)640 K GaAsSb-base (2) 95 In49Sn solders (3)171 GalnAs (8)841 indium (11) 1139 kinetics (12)1330 gallium nitride (GaN) (4)313, indium phosphide (InP) (4)244 (4) 321, (5) 395, (5) 402, (5) 406, indium tin oxide (ITO) (2)129 L (5) 411, (5) 416, (5) 421, (5) 429, inductively coupled plasma (6) 631,(9) 903,(12) 1337 (ICP) (5)340,(10)994 large-format focal-plane array GaN nanowires (5)391 infrared detector)s) (7) 664, (FPA) (7)815 GaP (6)591 (7)669,(7)720 laser doping (3)200 gate dielectrics (2) 124 infrared microscopy (4)286 laser-diode packaging (8 >895 Ge (5)346 infrared photodiode)s) (7)815, lateral growth (1)88 1376 lattice mismatch. (3) 227 moisture absorption (10) 1096 oxynitride (2) 124 lattice-matching (7) 732 moisture diffusion (5) 449 ozone (2)108 lead-free (4) 278"(5) 478(8) 879, molecular beam epitaxy (11) 1130,(11) 1160,(11) 1244 (MBE) (3) 220, (7) 664, P lead-free BGA-balls (11) 1270 (7) 688, (7) 694, (7) 710, (7) 726, packaging (3) 185 lead-free solder(s) (2) i52, (4) 292, (7)770,(7)815 passivation (7) 683, (7) 743, (5) 545, (5) 456, (6) 557, (6) 564, Monte-Carlo simulation (10)965 (10) 1004 (6) 584, (8) 861, (9) 940, MoO,.(6) 615 Pb/63Sn (5)478 (10) 1104, (10) 1122,(11) 1139, morphology. (ii) i250, (11) 1292 Pb-free soldering materials (11) 1190,(11) 1276, (11) 1292, MOS capacitor (12)1309 (11)1225 (11)1304 MOSFET . (5) 356 PbSe (4)298 lead-free solder alloy (2) 161, MRAM .(10)994 p-doping (5)416 (5)442 MSM (1) LI peel test (12)1347 lead-free solder material (2) 142 multilayer component (3)191 pendeo-epitaxy (PE) (5)421 leakage current (2) 124 phase diagram (4) 278, (6) 557 linear growth kinetics (5) 494 N phase equilibria (2) 152, (9)907 liquid metal embrittlement phosphor (4) 248 . (4)278 n"^-CdTe layers (7) 785 phosphorus-vapor pressure liquid phase (1) 71 ^'•^7 . (4)327 (6) 591 liquid water (5) 449 nanoabrasive particles (8) 872 photocapacitance (6)591 liquid-crystal display. (6) 610 nanoindentation (10) 958 photodetectors (DLl liquid-crystal polymers (3) 178 nanopattern (10)1112 photodiodes (3) 220, (7) 688, liquidus projection (9) 907 nanostructure (5)466 (7)710 liquidus temperature (9) 940 native point defects (4)321 photoemission (12)1353 Li M0O3 thin films (6) 615 Ni/Ge/Au (12)1357 photoemission spectroscopy lo’^i^-cycle fatigue (2) 142, nickel (2)152, (9) 907 . (8) 868 (5)456,(9)916. nickel substrate (5)494 photo-induced charge transfer LPCVD (5)361 NiSi., (5)466 . (5)351 LPD (12)1309 96.5An/3.5Ag (2) 142 photo-ionization spectroscopy LTCC. (3) 191 nitride (l)Ll . (12)1321 luminescence (7)776 nitrogen (5)351 photoluminescence (PL) (3) 234, n-on-p doides (7)710 (4) 244, (4) 316, (5) 42l7(7) 791, M novolak photoresist (7)749 (7)799 n-type GaAs (1)76 photonic effects (12) 1325 magnesium (2) 99 nucleation (3)227,(5)466 photoreflectance. (7)754 magnetron sputtering. (6)610 nucleation kinetics (11)1195 photovoltaic detectors (7) 726 material rate decay. (10) 1066 numerical modeling (7)677 physical vapor transport (5) 366, material-removal rate (10) 1022 (7)791 mechanical properties (8) 861, O piezoelectric field effects (5)384 (9)953,(11) 1292 pileup. (5) 529 MEMS. (5) 361 ohmic contact)s) (1)76,(5)340, PiN diodes (5) 370 mesa profile. (3) 209 (5) 416, (5) 500','(5) 506, (7) 811, p-i-n rectifier (5) 406 metal/GaAs interface (1) 76 (8)868, (9) 903 p-InGaN.77’"’7’”"’7" (4)313 metallic contacts (12) 1357 OMVPE. (4) 316 planar diodes (7)710 metallization. (6) 610, (8) 857 on-machine measurement planarization. (4) 272 metallization reliability (5)472 (10)1032 plasma. (iO) 1104 metalorganic chemical vapor 1/f noise (7)677,(7)699, plasma deposition (10) 1096 deposition (MOCVD) (1)88, (8)831 plasma-induced damage , (10)994 (3)234, (5)406,(7) 811. optical. (11) 1160 plastic material. (5) 449 metalorganic vapor phase epitaxy optical glass grinding (10) 1039 platinum. (5) 506, (il) 1175 (MOVPE) (5)395,(5)421, optical properties (6) 615 point defects. (2) 113 (7)785 optical transmission (7) 795 polarization (5) 416 metal-semiconductor optical-absorption cross section polycide. (10)988 contact. (12) 1362 .. (7) 802 polyimide (1)82 metamorphic (3) 196 optical-emission spectroscopy polyimide films (4)239 methysilane (12) 1341 (OES). (10)994 polymetal gate (10)988 micromachining (10) 1032 orbital interaction (3) 185 popcorn (5) 449 micro-Raman spectroscopy (6)631 organic polymer. (5) 512 porous pad. (iO) 1022 micro-Raman study. (10) 1112 orientation imaging microscopy post-annealing (5) 529 microstructure (2) 161, (OIM). (1)23,(1)50,(1)66 power semiconductor devices (10) 1032,(10) 1122,(11) 1190 oxidation (1) 71, (4) 298, . (6)635 microwave annealing. (3)214 (5) 529, (i())ib74" precipitation strengthening (5) 442 mid-infrared laser. (7)806 oxide. (5) 356 prelayers. (3)234 mid-infrared solid-state oxide layer. (10) 1104 printed wiring boards (11) 1208 laser. (7) 795 oxide/InP. (12) 1309 process integration (10) 988 MIS structures (5) 395 oxidizing reagent. (2) 108 production method (11) 1270 mode-locked laser (7) 759 oxygen. (2)99 proton irradiation effects (5) 437 1 pseudomornhic (8)841 silicon carbide (SiC) (3) 200, (SSMBE) (2)95,(8)841 Pt-Co (10)965 (3) 209, (5) 380, (5) 346, (5) 361, solid-state laser (7)759 P-type. (7) 799 (6)568,(12) 1353 solidus temperature (9)940 p-type doping (7) 660,(7) 705, SiC diodes (6)635 specific contact resistance (7)715 SiCN (12)1341 (5)416,(5)506,(9)903 1 p-type SiC (5) 506 sidewall-aspect ratio (7)822 spectroscopic ellipsometry pull-out test (12)1347 SiGe (5)529,(12)1325 (7)664,(7)688 silicon piezoresistive sensor (8) 887 spike annealing (10) 981, (10) 999 Q silver (9)933,(11)1139 sputtering (1)2. (9)L11, 1 silver salt (4)239 (10)1074 Q-factor (3)191 silver-copper-tin (2)161 stacking fault (5)370 quantum theory (3) 185 single phase (5) 506 staggered band lineup (2) 95 quartz crystal microbalance SiO,. (2) 108 steady-state regime (5)512 (10) 1096 6H-SiC (5) 336, (5) 376 step soldering (6)557 slurrv (10)1059 strain (7)732 R small grain formation (2)142 strain-induced diffusion (5)529 Sn dendrites (11)1166 stress (iO)1080 rare earth (10)1122 Sn/3.5Ag (5)478 stress-induced supercooling/ j rare earth additions (6) 564 Sn/Ag/Cu (11)1130 superheating (3)227 rare-earth ions (7) 776 Sn-20In-2.8Ag solder (9) 953 stress-strain behavior (il)1181 RC delay (10)988 Sn-3.5Ag (5)456 stripping (11)1230 reflow (10)1117 Sn-3.5Ag solder (11)1203 subsurface damage (10)1112 reflow atmosphere (11)1130 Sn-3Ag-0.5Cu (5)456 sulfur passivation (1)71 reflow soldering (6)576 Sn-3Ag-0.5Cu-lBi (5)456 superlattice disordering .. (5)384 relativistic DV-Xa calculation Sn-3Ag-0.5Cu-3Bi (5)456 surface Fermi level (9)903 (3)185 Sn-8Zn-3Bi solder (5)494 surface finish (6)584 reliability (11)1203 Sn-9Zn lead-free solder . (9)921 surface morphology .. (3)234, reliability physics (10)1052 Sn-Ag (11)1152,(11)1181, (5)376 remote plasma nitridation (11)1292 surface mount technology (RPN) (2)124 Sn-Ag based (9)946 (SMT) (2) 136 remote sensing (7)726 Sn-Ag eutectic solder (11)1166 surface tension (11)1139, residual stress (8)887 Sn-Ag solder (11)1304 (11)1225 resistance (1) 10 Sn-Ag-Bi (11)1292 surface treatment (10)1047, resistivity (5) 366, (8) 857 Sn-Ag-Bi solder (6)564 (12)1353 resonator (3)191 Sn-Ag-Cu (6) 584, (8) 879, SWIR . (7)720 RF-bias sputtering (10)1009 (10) 1122,(11) 1292 RIE (7)652,(7) 743 Sn-Ag-Cu solder (11) 1166, T rosin-based active flux (9) 921 (11)1256 RTCVD (12) 1341 Sn-Ag-Cu-Bi (8)879 tantalum (1)2,(8)848 1 Sn-based solder (3) 185 tantalum silicide (10)1074 S Sn-Bi (5)545 Te antisites (7) 720 Sn-In-Sb (11)1276 Te clusters (7)799 sacrificial oxidation (5)380 Sn-Pb eutectic (11)1270 TEM (1)88,(5)391,(5)506, I sapphire (0001) (6)631 Sn-Pb plating (6)551 (12)1357 Schottky barrier) s) (9) 903, SnPb solder (6)576 temperature (10)1080 (12) 1353 Sn-Sb (11)1276 temperature control .. (10)981 Schottky barrier enhancement SnSb solder (2) 136 tensile strength (9)921,(9)928 (12) 1330 Sn-Zn (8) 861, (9) 940 termination .... (2) 136 Schottky contacts i (l)Ll, (12) 1362 Sn-Zn-Ag (8)861 texture (1)2,(1)55,(10)1009, Schottky diodes (2) 119, (10) 1090 solar cells (10)972 (11)1250 Schottkv-barrier height (5) 406, solder(s) (4) 253, (8) 879, thermal aging .... (8) 895 (12)1362 (9)933, (9) 946,(11) 1160, thermal conductivity (3) 196, Schottky-barrier rectifier (5) 406 (11) 1244,(11) 1250,(11) 1264 (5)366 secondary ion mass spectrometry solder alloy. (4) 278 thermal cycling. (9) 933 (SIMS).... (2) 124, (5) 366, (5) 376 solder ball. (11) 1130 thermal diffusion. (5) 376 seed aging. (10) 1047 solder interfacial reaction (5) 520 thermal resistance. (4) 286 seeded sublimation. (5) 366 solder joint(s) (4) 265, (11) 1152, thermal stability. (5) 506 segregation. (4) 278 (11) 1181,(11) 1238,(11) 1264, thermodynamic modeling . .. (4)321 semiconductor)s).... (3) 200, (4) 321 (11)1292 thermodynamics (6) 557, (12) 1330 semiconductor contacts ... (12) 1330 solder paste (11)1130 thermoelectric heating. (5) 535 shear strength. (4) 265 solderability (9)921 thermoelectric properties .... (4) 298 sheet resistance. (10) 1074 soldering (6)640 thermomechanical cycling ... (4) 253 shielding effectiveness. (3) 178 soldering reaction (5)488 thermomechanical fatigue short length effect (iO) 1052 solder-joint strength (8)895 (4) 292, (4) 286, (9) 946, silicon (1) 33,"(2) 113, (5) 466, solid solubility (3)21 (il) "1152 (5)5()6, (ib) 972 solidification (5)545 thickness. (4) 298 Si. Ge (5)500 solid-source molecular beam epitaxy thin film thickness (8)848 1378 thin filni(s) (1)55,(7)811, wetting behavior (10)1047 (10)958,(10)965 U wetting force (9)940 thin-filni transistor ... (5)512, wetting time (9) 940 (6)610 ultra-shallow junctions whisker formation (1)45 threading' dislocations (1)88 (3)21,(10) 981 wide bandgap (3)200 three-dimensional study under bump metallurgy (UBM) wide bandgap material (7)811 (10)965 (5)478, (5)520,(11) 1175, wide bandgap semiconductor (7) 776 3MS (5)361 (11) 1230,(11) 1256 wirebonding (12)1316 Ti underlayer (iO)1009 underfill (4)253 within-wafer-non-uniformity tin (9)907,(11)1139,(11) 1195 UV (l)Ll (WIWNU) (10)1066 tin coating (11)1283 UV laser (4)239 tin-copper lead-free alloy (9)928 X TLM technique (5)346 V transient regime (5)512 x-ray diffraction (XRD) (5)421, transition-metal ion (7)759 valence-band discontinuity (6)597 transition-metal laser (7)806 (4)313 x-ray photoelectron spectroscopy transmutation (7)705 vapor pressure (12)1337 (5) 376, (5)380,(10) 1080 traps (i2)1321 V-defects (1)88 x-ray reflectivity (5) 395, (8) 848 tribolog>' (8) 872, (10) 1016 viscoelastic pad effects (10)1066 TRIM (1)33 VLWIR HgCdTe (7)699 Z trimethylaluminum (12)1337 VUV-assisted oxidation (12)1325 trimethylgallium (12)1337 0.2% proof stress (9)921 tunable mid-IR solid-state lasers W zinc oxide (ZnO) (7) 776,(7)811, (7)791 (8)868 tunable solid-state lasers (7)802 wafer bonding (2)113 Zn doping (4)244 tungsten (10)988 wafer scale analysis (10) 1066 Zn partial pressure (8) 834 turning-EDM hybrid machining wafer-to-wafer-nonuniformity ZnCdSe (4)316 (10)1032 (WTWNU) (10)1066 ZnS (7) 743, (7) 770 two-color detectors .... (7) 669 weakest link approximation ZnSe (7)799 tj'pe conversion (7)652,(7)738, . (10) 1052 ZnSerCr (7)770 (7)743 wettability. (3) 185,(9)940

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