Journal of Electronic Materials 1994: Vol 23 Index

11 Pages·1994·2.7 MB·English

Author Index to Volume 23
A Black, M.A. .(11) 1121 Clum, J.A.(8) 773
Bodin, C. . (3)313 Cockerill, T.M.(2) 115
Agahi, F. .(7) 649
Boettinger, W.J. .(7) 603 Coldren, L.A.(2) 87
Aesoph, M.D. . (11)1199
Bonnet, J.J. .(1)7 Cole-Hamilton, D.J.(2) 69
Agnello, P.D. .(4) 413
Borek, M.A. . (9)875 Coleman, J.J. (2) 67, (2) 115, (2) 175
Ahn, S.T. . (12)1273
Borle, W.N. . (12)1349 Colomb, C.M.(8) 791
Ahrenkiel, R.K. (2) 147, (7) 669
Bothra, S. . (8)819 Cook, J.W., Jr.(3) 251
Ahuja, R. . (10)1027
Boucaud, P. . (6)565 Comet, A.(4) 423, (9) 969
Airaksinen, V.M. .(5) 465
Bowers, K.A. .(3) 251 Coronado, C.A.(3) 269
Akram, S. . (3)259
Bradley, J. . (9)919 Corvini, P.J.(2) 233
Al-Jassim, M. . (11)1229
Brebner, J.L. .(12) 1291 Coudenys, G.(2) 225
Alavi, K. . (6)519
Breiland, W.G. . (2)179 Coudray, P.(1) 7
Amarakoon, V.R.W. .(11) 1093,
Bretschneider, E.... .(3) 299 Coyne, W.(10) 1067
(11) 1103
Brett, M.J.(11) 1215, (12) 1309 Cunningham, J.E.(10) 1081
Anandan, M. .(12) 1349
Bright, V.M.. (9)991 Cuomo, J.J.(9) 889
Anayama, C. . (3)355
Brillson, L.J... (9)929
Anderson, I.E. . (7)595
Brown, W.D. . (6)569
Anderson, R.L. . (11)1159
Bruce, R. ... (5) 441, (9) 953
Anderson, T.J. . (3)299 D
Bucher, E. . (4) 363
Anderson, W.A. ....(1) 13,(1)53,
Biihlmann, H.-J. ... .(12) 1343 Dalby, R.J. . (2)207
(6)551,(12) 1285
Dalke, G. . (8)787
Andre, J.P. . (2)141
Dang, L.S. .(3)313
Ang, S.S. . (6)569
Dantzig, J.A. . (2)115
Archibald, W.B. . (11)1159
C Dapkus, P.D. .(2) 67
Arora, B.M. . (2)191
David, J.P.R. . (9)975
Artaki, I. . (8) 757, (8) 779 Cai, Y.M. . (7)653
Deering, S.E. . (12)1325
Asano, T. .(3) 263 Campbell, J.C. . (4)409
del Alamo, J.A.. .(4)423
Asbeck, P.M. .(4) 403 Campidelli, Y. ... (6) 497, (6) 565
Deluca, J.A. .(11) 1191
Asher, S.. (5) 431 Cao, W. . (10)1043
Demeester, P. .(2) 121,(2)225
Aspnes, D.E.. (4) 423 Caragianis, C. ... (9) 883, (9) 901
DenBaars, S.P... .(2) 87, (2) 233
Attolini, G.. (2) 153 Cardone, F. .(7) 659
Dennis, K.W. .(11)1117
Averback, R.S.. (2) 175 Carey, M.J.. (10)1043
DePuydt, J.M.... .(3) 275
Carius, R. ..(10) 1061
Deswarte, A. . (2)141
Cams, T.K. .... (4) 369, (5) 437
Dew, S.K.. (11) 1215,(12) 1309
Casas, L.M. . (9) 991
B DiVenere, A. . (12)1255
Casati, D. . (6) 525
Domen, K. .(3) 355
Baca, A.G.(8) 809 Cerva, H.. (2)135
Dorris, S.E. . (11)1163,
Badoz, P.A.(6) 497 Chan, C. . (3)337
Downey, J.P.. .(10)999,(10) 1007
Bagai, R.K.(12) 1349 Chan, P.W. . (5)459
Drost, K. . (7)653
Baik, H.K.(12) 1335 Chan, Y.-J. .(7) 675
Drummond, T.J. . (8)809
Bajaj, J.(2) 167 Chang, L.H. . (6)551
Dumont, H. . (2)239
Baker, J.E.(8) 791 Chen, H.S. .(7) 687
Durgavich, J. .(10) 1055
Balachandran, U.(11) 1087, Chen, J. .(12) 1255
Duva, J.M. . (10)1055
(11) 1111,(11) 1163 Chen, Jianhui. .(12) 1297
Ballingall, J.M.(12) 1303 Chen, K.-T. .(9) 963
Ballutaud, D.(2) 239 Chen, M.-C. . (4)383
Banerjee, S.(2) 191 Chen, Y.-J. . (4)383 E
Bar, S.X.(2) 159 Cheng, H. . (3)275
Eisen, F. . (4)369
Baribeau, J.-M.(9) 943 Chikarmane, V. .(12) 1261
Elias, J.A. . (2)105
Bamer, J.B.(9) 849 Chilla, J.L.A. . (3)359
Elliman, R.G. . (4)391
Barr, D.L.(1) 63 Chin, T.P. . (4)403
Eisner, B. .(2) 225
Bartels, F.(8) 787 Chiou, J.-C. . (4)383
Erickson, K.L. .(8) 721, (8) 729
Basco, R.(7) 649 Chiu, L.A. . (3)347
Baumann, J.A.(2) 207 Cho, C.-C. . (8)827
Bean, J.C.(6) 493 Cholakova, T. . (11)1235
Beckham, C.(2) 159 Choquette, K.D. ... . (7)625
F
Bedikjan, L.(11) 1235 Chou, H.C. .(1)31,(7)681
Bennett, B.R.(4) 423 Chowdhury, R.. (9)861 Facemire, B.R. ...(10)999,(10) 1007
Bensahel, D.(6) 565 Christen, J.. (2) 125, (2) 201 Fagan, J.G. .(11) 1093,(11) 1103
Berkowitz, A.E.(10) 1043 Christou, A. . (9)969 Fan, Y. . (3)245
Berolo, O.(10) 1067 Chu, S.N.G.. (7)625 Fang, X.M. . (12)1269
Bertness, K.A.(2) 195 Chun, J.S.. (10)1075 Fannin, L.W. .. .(2) 93
Bhat, A.K.(7) 681 Chung, D.D.L. .... (6) 541, (6) 557, Feijoo, D. . (6)493
Bhat, I.B.(3) 259 (7)641 Feldman, L.C. .(6) 493
Bhatkal, R.M.(9) 907 Chyi, J.-I. . (7)675 Felton, L.E. .(7)611,(8)765
Bhattacharya, P.K.(8) 831 Cibert, J. .(3)313 Fernandez, J.M.(12) 1297
Bieger, W.(11) 1135 Cinque, R.B. . (6)533 Ferrieu, F.(6) 565
Bimberg, D. .(2) 125, (2) 135, (2) 201 Clement, M. . (11)1245 Feuillet, G.(3) 313
1379
1380
Files-Sesler, L.A. . (8)827 H Iyer, A.N.(11) 1087
Fine, M.E. .(7) 619, (8) 741
Ha, Y.-M.(1) 39
Finkman, E. . (2)225
Habermeier, H.-U.(4) 363
Fischer, K. .(11) 1135
Haddab, Y.(12) 1343 J
Fisher, P.A. .(3) 269
Hafich, M.J.(3) 359
Fisher, T.A. .(9) 975 Jackson, A.M. .(8) 757
Hagerott, M.(3) 245
Floyd, P.D. .(2) 101, (3) 283 Jagannadham, K.... .(9) 861
Haidar, P.(11) 1087
Foad, M.A. . (3)289 Jager-Waldau, G.... .(4) 363
Halpern, B.L.(11) 1239
Foote, M.C. . (9)849 Jan, W.Y. .(10)1081
Han, C.-H.(1) 39
Forbes, D.V. .(2) 115, (2) 175 Jen, A. K.-Y. . (7)653
Han, H.(2) 115
Foster, D.F. .(2) 69 Jia, Q.X. ... (1) 53, (6) 551
Han, J.(3) 245
Fradkov, V.E. (10) 999, (10) 1007 Jian, P. .(9) 953
Hansen, K.(9) 935
Franzosi, P. .(2) 153 Jiang, H. .(4) 391
Hanson, A.W.(8) 791
Fraser, H.L. . (10)1027 Jin, S.(7) 635, (7)687,(8) 691,
Hanson, C.M.(7) 649
Frazier, D.O. (10)999,(10) 1007 (8) 715, (8) 735
Harding, C.(2) 207
Frear, D.R. . (8)691 Jo, J. .(11) 1199
Hardtdegen, H.(10) 1061
Freeman, G.B.... . (9)919 Jones, B.B. .(9) 849
Harkness, S.D.(9) 875
Freer Goldstein, J.L.(5) 477 Jones, K.M. .(11) 1229
Harris, K.E.(10) 1035
Fresina, M.T. . (8)791 Jones, K.S. . (3)299
Hashemi, M.M.(2) 101, (2) 233
Freund, R.S. .(7) 625 Jones, S.H. .(10) 1055
Hatalis, M.K.(3) 319
Friedman, D.J... .(5) 431
He, L.(1) 13
Fu, S.-L. . (4)403
He, L.(12) 1285
Fujita, Shigeo.... .(3) 263
He, L.(3) 245 K
Fujita, Shizuo.... . (3)263
Heeger, A.J.(5) 453, (9) 925
Fukatsu, S. .(1)47 Kajuch, J. . (11)1199
Heimbuch, M.E.(2) 87
Furdyna, J.K. . (3)283 Kamenitsa, D. .(8) 801
Heinrichsdorff, F.(2) 135, (2) 201
Kamra, S. .(7) 681
Heremans, J.(2) 75
Kanber, H. .(2) 159
Herko, S.P.(3) 255
Kang, S.H. . (12)1273
Herve, D.(3) 313
Kang, S.K. .(8) 701
Hill, C.W.(5) 447
Karion, A. .(11)1117
G Hill, G.(9) 975
Kaijalainen, P. . (12)1279
Hlava, P.F.(7) 583
Gaines, D.G.(7) 659 Katayama, Y. .(2) 97
Ho, E.(3) 269
Gaines, J.M.(3) 255 Kato, H.. (8) 835
Ho, I.-C.(5) 471
Garrou, P.(8) 819 Kato, Y.. (1)47
Ho, P.(12) 1303
Gaskill, D.K.(6) 509 Kattner, U.R. .(7) 603
Hoehn, J.G., Jr.,.(11) 1087
Ge, Y.-R.(11) 1221 Kavanagh, K.L.. (9) 929
Hoellwarth, C.C.(11) 1159
Gedridge, R.W., Jr.(5) 447 Kawabata, A. .(3) 331
Hoger, S.(5) 453
Georgakilas, A.(9) 969 Kawabe, M.. (3)331
Hogg, R.A.(9) 975
Ghosh, G.(7) 619, (8) 741 Kellam, M.. (8) 819
Hollander, B.(4) 369
Gil, R.V.(2) 167 Keramidas, V.G.. . (1)19
Hollfelder, M.(10) 1061
Giordana, A.(6) 509 Kesan, V.P.. (4) 413
Holloway, P.H.(3) 299
Glazer, J.(8) 693 Ketterson, J.B.. (12)1255
Holmes, A.L., Jr.(2) 87
Glicksman, M.E. (10) 999, (10) 1007 Keyes, B.R. . (7)669
Holtz, P.0.(6) 513
Glidewell, C.(2) 69 Khamankar, R. . (12)1261
Hong, M.(7) 625
Glowacki, F.(6) 565 Kibbler, A.E. .(5) 431
Hopkins, P.L.(8) 721, (8) 729
Goldman, R.S.(9) 929 Kilgo, A.C. .(7) 583
Hou, C.L.(12) 1255
Goossen, K.W.(10) 1081 Killeen, K.P. . (2)179
House, J.L.(3) 269
Gordon, H.M.(8) 779 Kim, C.-K. .(1)39
Howard, A.J.(8) 809
Goretta, K.C.(11) 1163 Kim, C.S. . (12)1335
Hozhabri, N.(6) 519
Gorochov, O.(2) 239 Kim, D.-W. . (10)1075
Hsieh, H.-L.(5) 471
Gossard, A.C.(6) 513 Kim, E.S. . (12)1273
Hu, J.G.(11) 1151
Gossett, K.J.(3) 251 Kim, J. . (12)1261
Huang, J.W.(7) 659
Goto, S.(2) 97 Kim, K.H. . (12)1273
Huang, L.J.(9) 943
Gouskov, L.(1) 7 Kim, S.I. .(12) 1335
Huang, W.C.(4) 397
Goyal, A.(11) 1169,(11) 1191 Kim, S.T. .(12) 1273
Hull, J.R.(11) 1127
Graham, J.T.(12) 1291 Kim, T.Y. . (9)901
Hunt, B.D.(9) 849
Green, L.(2) 75 Kimerling, L.C. .(5) 487
Greer, A.L.(12) 1315 King, A.H. . (10)1035
Grey, R.(9) 975 King, C.N. . (3)299
Grober, L.H.(7) 625 Kingon, A.I. .(1)57
I
Grundmann, M.(2) 201 Kistenmacher, T.J. . (11) 1209
Guang-Yu, W.(2) 217, (2) 221 legems, M.(12) 1343 Klatt, J.K. . (2)175
Gui, X.(12) 1309 Irvine, S.J.C.(2) 167 Klavins, P. . (11)1159
Gunshor, R.L.(3) 245 Ishida, K.(8) 747 Klem, J.F. . (8)809
Gupta, A.K.(12) 1359 Ishikawa, T.(3) 341 Knight, G. .. (5) 441, (9) 953
Gust, W.(8) 787 Ivey, D.G.(5) 441, (9) 953 Knorr, D.B. (7)611,(10) 997
1381
Ko, D.H. . (12)1273 Lopez-Rubio, J.A. . (11)1245 Morris, J.W., J.r.. .... (8) 691, (5) 477,
Koidl, P. .(11)1203 Lovejoy, M.L. .(7) 669 (6) 533, (8) 787,
Kolbas, R.M.. (1) 57 Lowndes, D.H. .(9) 841 Morris, S.J. .(8) 801
Kolenbrander, K.D..... (3) 347 Lu, K. .(3) 269 Motowidlo, L.R.... . (11)1087
Kolodziejski, L.A. (3) 243, (3) 269 Lu, Z.-H. .(9) 943 Mowbray, D.J. . (9)975
Kondo, M. .(3) 355 Luftman, H.S.. (7) 625 Murakami, M. . (9)983
Kostic, P. . (11)1163 Lugagne-Delpon, E. .(2) 141 Murray, P.T. .(9) 855
Kovar, M. .(4) 409 Lundstrom, M.S.. . (7)669
Krabbes, G. .(11) 1135 Luo, H. . (3)283
Kramer, C. .(2) 195 Luquet, H. .(1)7 V
Kramer, M.J.(11) 1111, (11) 1117 Liith, H. . (10)1061
Krier, A. .(6) 503 Lux, G. .(8) 801 Nakamura, T.. (6) 577
Kroeger, D.M.... (11) 1169, (11) 1191 Narayan, J. .(9) 861, (9) 879
Krost, A. (2) 135, (2) 201 Nellis, W.J.. (11) 1111
Kuech, T.F. . (7)659 M Nicolet, M.-A. .(4) 369, (5) 437
Kuo, L.H. . (3)275 Nimmo, K.L. .(8) 709
Kurtz, S.R. .(5) 431 M’saad, H. . (5)487 Noh, S.K. .(12)1335
Kvam, E.P. .(10) 1021, Ma, C.S. .(5) 459 Nomura, Y. .. (2) 97
.(11)1131,(11)1183 Maayan, E. . (2)225 Norris, P.E. .(2) 159
Kwak, J.S. . (12)1335 Machusak, D.A. .(7) 687 Nortron, D.P. .(9) 841
Mack, M.P. .(2)87 Nurmikko, A.V... .(3) 245
Maehara, K.. (3)263
Magee, C. .(8) 801
L
Mahadev, V. . (10)1015
U
Lambert, B.. (1)7 Maier, M.. (11)1203
Lan, M.D.. (11)1159 Mani, S.S.(10) 999, (10) 1007 O’Neil, E.G. .(9)919
Lanagan, M.T.. .(11)1163 Mannaerts, J.P. . (7)625 Oates, A.S. .(1) 63
Landheer, D. . (9)943 Mao, Y.. . (6)503 Obloh, H.. (11) 1203
Langer, D.W. . (12)1269 Marcenat, F. . (3)313 Oh, E.. (3)307
Lapasin, R. . (6)525 Marshall, T. .(3) 255 Oht.a, S. .(3) 331
Lappe, J.J. . (5)487 Martin, P.A. . (12)1303 Ohtani, H.. (8)747
Lareau, R.T. .(7) 649 Martinez, O.E. . (3)359 Okada, N. . (3)355
Larre, A. .(6) 565 Masuda, H. . (6)577 Okada, Y. .(3) 331
Lau, K.M. . (7)649 Masur, L. . (11)1191 Oku, T. . (9)983
Lau, S.S. . (4)403 Masut, R.A. . (12)1291 Okunishi, M. . (9)983
Lau, W.M. . (9)943 McAvoy, D.T. . (11)1239 Okuno, Y. .(8)835
Lazzarini, L. .(2) 153 MrCallnm R.W.dl 1 1111.(101117 Olson, J.M. .(2) 195, (5) 431
Lee, C.L. .(4) 397 McCormack, M. ... (7) 635, (7) 687 Ong, C.W. .... (5) 459
Lee, J. . (8)831 (8) 715, (8) 735 Ono, N. . (9)983
Lee, J.C. . (12)1261 McGinn, P.J.(11) 1085, (11) 1121 Oslin, B.L. . (11)1159
Lee, S.-H. .(1) 39 (11)1127,(11)1131,(11)1143 Otsuka, N. . (10)1015
Lee, Y.J. .(10)1075 Mehta, P.. (1)57 Otsuki, A. .(9)983
Legras, R. .(3) 313 Melas, A.A. .(3) 259 Ott, J.A. .(4)413
Lehoczky, S.L. .(1)25 Melloch, M.R. (7) 669, (10) 1015
Lei, T.F.. (4) 397 Menoni, C.S. . (3)359
Leppavuori, S.. (12)1279 Merchant, H.D. .(7) 581
p
Li, K.-H. .(4) 409 Merkel, K.G. .(9) 991
Li, L.. (6) 557 Merz, J.L.(2) 101, (3) 283, (6) 513 Pabla, A.S.. (9)975
Li, P. .(11) 1215 Messier, R.W., Jr. . (8)765 Pacer, M. . (2)159
Li, S.H. .(8) 831 Meyer, R. .(10) 1061 Paine, D.C.. (9) 883, (9) 901
Li, Y. . (12)1269 Michel, J. .(5) 487 Pakbaz, K. .(5) 453, (9) 925
Li, Y.F. . (11)1163 Milanova, M. . (11)1235 Park, C.-O. .(10)1075
Liang, B.W. .(11) 1251 Milewski, P.D. .(1)57 Park, C.G. .(12) 1335
Liang, W.-C. . (6)493 Millar, G. .(10) 1067 Park, M. . (11)1117
Lichtenwalner, D.J. .(1)57 Miller, C.M. .(7) 595 Parthasarathi, S.(11) 1199
Lie. D.Y.C. .(4) 369 Miller, D.J. .(11) 1151 Partin, D.L. . (2)75
Liedl, G.L.(10) 1015, (11) 1175 Miragliotta, J. . (11)1209 Partis, D.A. (11) 1093,(11) 1103
Lim, D.L. . (8)801 Mishima, T. . (6)577 Pate, M.A. . (9)975
Linehan, D.S. .(11) 1183 Mishra, U.K. . (2)233 Pathak, R.N. .. .(6)519
Lipsanen, H.K. . (5)465 Mochizuki, K. . (6)577 Pathangey, B.. . (3)299
Lisicka-Skrzek, E... .(10) 1067 Moerman, I. .... (2) 121, (2) 225 Patrizi, G.A. ... . (11)1229
Liu, W.S. . (5)437 Molva, E. .(3)313 Pautrat, J.L.... .(3)313
Livesay, B.R. . (9)919 Monahan, T.P. . (7)649 Pavate, V. (11)1131,(11) 1183
Llinares, C. .(1) 7 Monemar, B. . (6)513 Pearce, R.H. ... .(2) 93
Lo, V.C.!. . (5)459 Morante, J.R. . (9)969 Peeler, D.T. . (9)855
Loomans, M.E. .(7) 619, Moreland, J. .(2) 195 Peiner, E. . (9)935
(8) 74l'(ll)1163 Morishita, Y.. (2) 97 Peiro, F. .(4)423, (9) 969
1382
Pelosi, C. .(2) 153 Sands, T. .(1)19 Svob, L.(2) 239
Perotin, M. .(1) 7 Sanfacon, M.M. .(2) 147 Szekely, J.(12) 1325
Perrin, S.D. .(2)81 Sangrador, J. .(11) 1245
Peticolas, L.J. . (6)493 Saraie, J. . (3)245
Petkie, R.R. .(9) 893 Sarkhel, A.K. (8)701
Petrich, G.S. .(3) 269 Schaschek, K. . (11)1239
Petruzzello, J.A... . (3)255 Schatke, K. . (2)135 Tamura, H.(8) 835
Poeppel, R.B.(11) 1127, (11) 1163 Schatzle, P. .(11) 1135 Tanahashi, T.(3) 355
Ponzoni, C.A. .(3) 255 Schauer, S.N. . (9)991 Tanaka, N.(3) 341
Potemski, R.M. .(7) 659 Schetzina, J.F.(3) 251, (10) 1071 Tanoue, T.(6) 577
Powers, T.A. .(8) 773 Schlabach, T.D. .(7) 581 Tanzi, V.A.(7)611
Prasad,M. .(3) 359 Schlachetzki, A. .(9) 935 Tao, M.(5) 447
Pratt, R.E. .(4) 375,(10) 1047 Schmitt, J.J. . (11)1239 Tasch, A.F.(8) 801
Pu, S.T. .(2) 125 Schmitz, J. .(11) 1203 Tejwani, M.(4) 413
Pv, M.A. . (12)1343 Schnabel, F. .(2) 135 Thiagarajan, P.(11) 1229
Schneider, R.P. .(8) 809 Thomas, G.(10) 1043
Selber, H. .(2) 125 Tiwari, P.(9) 861
n Seltzer, C.P. .(2) 81 Tiwari, P.(9) 879
Selvamanickam, V.. . (11)1169 Tkaczyk, J.E.(11) 1191
Qin, S.. (3)337 Sengupta, S.(11) 1127, (11) 1143 Todt, V.R.(11) 1127
Qiu, J.. (3) 275 Seraphin, A.A. .(3) 347 Tracy, D.M.(2) 185
Quesnel, D.J. . (4) 375, (10) 1047 Sha, Y.-G. .(1)25 Tran, C.A.(12) 1291
Sharma, S.C. .(6)519 Trogolo, J.A.(9) 889
Shealy, J.B. . (2)233 Tsai, C.(4) 409
Shelton, R.N. . (11)1159 Tsutsui, K.(3) 289
R
Shepard, A. . (2)207 Tu, C.W.(4) 403, (11) 1251
Raeder, C.H.. (7)611 Sherwin, M.E. .(8) 809 Tu, K.N.(9) 893
Raisanen, A.. (9) 929 Shi, D. . (11)1127 Turkot, B.A.(2) 115
Rajan, K.(9) 839, (9) 889, (9) 893, Shi, Z.Q. .(1) 53
(9) 907, (9)913,(10)997 Shi, Z.Q. . (12)1285
Ralston, J.D. . (11)1203 Shigesato, Y. (9) 883, (9) 901
Raman, R.V. . (11)1159 Shih, W.C. . (12)1315
Ramdas, A.K. .(3)307 Shim, S.J. .(12)1273 Uchibori, C.J.(9) 983
Ramesh, R. . (1)19 Shimomura, H. . (3)331 Uusimaki, A.(12) 1279
Rao, V.P. . (7)653 Shin, D.W. . (12)1335
Ray, U. . (8)779 Shiraki, Y. .(1)47
Reaves, C.M. .(2) 87 Shul, R.J. .(8) 809
Rees, G.J. .(9) 975 Silvestre, P. . (11)1229
Rele, S.V. . (11)1159 Simonton, R.B. . (8)801 Vakhshoori, D.(7) 625
Ren, Z. . (11)1151 Singh, J. . (8)831 Van Daele, P.(2) 121, (2) 225
Richmond-Hope, J.A. (11) 1093, Singh, R K... (9) 839, (9) 875, (9) 913 Vantomme, A.(4) 369
(11)1103 Singler, T.J. . (8)773 Varanasi, C.(11) 1131, (11) 1143
Rieger, D.J. . (8) 809 Sinn, M.T. . (4)423 Varriano, J.A.(1)1
Riley, G.N., Jr.,.. . (11) 1191 Sirtori, V. . (6)525 Vasquez, R.P.(9) 849
Robertson, I.M. .. . (2)115 Skolnick, M.S. .(9) 975 Vaynman, S.(8) 741
Robinson, G.Y. ... ..(3) 359,(11) 1229 Smart, A.P. . (3)289 Venkatraman, C.(11) 1175
Robson, P.N. . (9)975 Smith, J.F. . (7)595 Vermaerke, F.(2) 121, (2) 225
Rocca, J.J. . (3)359 Smy, T. . (11)1215 Vermeire, G.(2) 121, (2) 225
Rodriguez, T. .(11) 1245 Solomon, J.S. .'(12) 1269 Vernon, S.M.(2) 147
Rogers, J.R. (.10) 999,(10) 1007 Soonckindt, L. .(1)7 Vianco, P.T.(7) 583, (8) 721
Rogers, T.J. .(12) 1303 Sotomayor Torres, C.M. (3) 289 (8) 729, (8) 757, (8) 779
Rohatgi, A. .(1)31,(7)681 Specht, E.D. .(11)1191 Voisin, P. . (2)141
Roy, R. . (9)889 Spurdens, P.C. .(2)81 Volz, M.P. .(1)25
Rui-Wu, P. .(2)217,(2)221 Sreenivas, G. . (6)569 von Ortenberg, M. . (9)935
Ruterana, P. .(2) 141 Srivastava, A.K. . (2)191 Voutsas, A.T. .(3)319
Stanev, N. .(11)1235 Vreeland, T. .(4) 369
Stillman, G.E. .(8) 791
s Stockman, S.A. . (8)791
Stringfellow, G.B. ... . (2) 125, (5) 447
W
Sagnes, I. . (6)497 Stromswold, E.I. .. (4) 375, (10) 1047
Sahm, P.R. .(11) 1127 Su, L.C. . (2)125 Wagner, J. . (11)1203
Salamanca-Riba, L.(3)275 Sudhama, C. .(12) 1261 Walck, S.D. .(9) 991
Sale, T.E. . (9)975 Sugiura, K. . (3)355 Walker, J.A. . (10)1081
Salviati, G. . (2)153 Sun, S.S. . (3)299 Wallace, R.M. . (8)827
Salzman, J. . (2)225 Sundaram, M. . (6)513 Wang, C.A. .(2) 185
Sanchez, J.E., Jr. . (10)997 Sundersheshu, B.S. . (12)1349 Wang, D. .(5)441
Sanchez-Rojas, J.L.(9) 975 SutlifF, J.A. . (11)1191 Wang, H.C. . (12)1255
1383
Wang, J.H.(11) 1151 Wong, K.Y. ... (7) 653 Yokogawa, T. (2) 101, (3) 283
Wang, K.L.(4) 369, (5) 437 Wong, S.P. ... (5) 459 Yong-Qing, D. .(2) 221
Wang, Z.L.(11) 1191 Wood, E.P. ... (8) 709 Yost, F.G. .(7) 581
Warner, A.V.R.(12) 1359 Woodall, J.M. (10) 1015 Youngdahl, C.A. . (11)1163
Waters, R.G.(2) 207 Woodhead, J. ... (9) 975 Yu, G. .(9) 925
Watt, M.(3) 289 Woods, L.M. . (11) 1229 Yu, J.E. .(3) 299
Webb, D.W.(2) 93 Wudl, F. ... (5) 453 Yu, Z. .(3) 251
Wenzlaff, J.J.(11) 1163 Yu, Z.Q. . (2)121
Wetzel, R.C.(7) 625 Yuan, D.-W. .(11) 1199
White, J.M.(4) 409 X Yue, C.F. .(9) 875
Whittaker, D.M.(9) 975
Wickenden, A.E.(6) 509 Xie, K. .(1)1
Wickenden, D.K... (6) 509, (11) 1209 Xu, Y. .(9)919
Wicks, G.W.(1) 1 Z
Wie, C.R.(1) 1 Zanoni, R. . (11)1239
Wiedemeier, H.(9) 963, (11) 1221 Zhang, C. .(5) 453
Wieder, H.H.(9) 929, (12) 1297 Zhang, D. .(1)57
Wiesner, U.(11) 1135 Yadava, R.D.S.. (12) 1349, (12) 1359 Zhang, H.-X. .(12) 1279
Wilkinson, C.D.W.(3) 289 Yang, D.(5) 441 Zhang, J.-Z. .(11) 1239
Willcox, A.R.K.(9) 975 Yang, M.-T.(7) 675 Zheleva, T. .(9) 861, (9) 879
Williams, J.S.(4) 391 Yang, S.-H.(8) 801 Zhu, B. . (4) 403
Williams, L.B.(11) 1131 Yang, W.(8) 765 Zhu, M. .(6) 541, (7) 641
Wilson, W.L., Jr.(2) 105 Yang, Z.(10) 1071 Zhu, Y. . (2)225
Winandy, P.M.(11) 1163 Yeh, T.-J.(7) 675 Zolper, J.C. . (8)809
Wisoff, P.J.(2) 105 Yellen, S.L.(2) 207 Zwicker, G.. (4)363
Witherow, W.K... (10) 999, (10) 1007 Yi, J.(1) 53 Zybura, M.F. . (10)1055
Wong, G.K.(12) 1255 Yi, X.J.(12) 1255

Key Word Index to Volume 23
(lll)B.(9) 975 insulator (BE-SOI).(6) 493 detection.(6) 497
123 (YBa2Cu307^).(11) 1093, brittle fracture.(9) 919 diamond-like carbon (6) 569, (9) 855
(11)1103 broad-area lasers.(2) 87 dielectric(s).(6) 557, (9) 875
211 (Y2BaCu05).(11) 1093 dielectric properties.(6) 551
4f-intrashell emission.(12) 1269 differential thermal
analysis.(7) 595
C diffusion.(1) 63, (8) 787, (10) 999
A capacitor.(1) 53 diffusion couples.(11) 1103
diisopropylantimony hydride
capacitor applications.(12) 1273
absorption.(6) 509 (DIPSbH).(5) 447
carbon and H2 incorporation (2) 239
acceptor.(5) 471 dimethylzinc.(2) 105
carbon implantation.(4) 391
activation energy.(9) 935 diode quantum well.(1) 47
carrier recombination.(3) 359
active brazing alloy.(6) 541 dislocation-induced deep-level
cathodoluminescence
adhesion.(8) 827 states.(9) 929
(CL).(2) 125, (2) 201
Ag coated Si substrates.... (12) 1279 dislocations.(10) 1021, (11) 1111,
C-doping.(8) 791
Al-Ca.(12) 1315 (11)1131,(11)1183
CdTe.(2) 221, (12) 1349
AlAs/AlGaAs in situ reflectance disorder.(3) 283
CdTe-CdMnTe
monitoring.(2) 179 disordering.(2) 101
heterostructures.(3) 313
(AlGa)As.(10) 1061 dispersion.(8) 735
CdTe/CdS.(7) 681
AlGaAs/GaAs.(7) 649, (12) 1343 domain epitaxy.(9) 861
CdTe/CdS heterojunctions.(1) 31
AlGaAs/InGaAs.(7) 675 donor.(5) 471
characterization.(6) 525
AlGalnP.(3) 355 dopants.(10) 1015
charge transfer.(11) 1117
AIN.(6) 557 doping.(7) 659
chemical etching.(8) 835
AlSb/InAs/GaSb.(11) 1203 drift.(1) 63
chemical vapor transport
aluminum.(1) 63 dry etching.(3) 289
(CVT).(11) 1221
AlxGalxAs.(7) 659 DX center.(12) 1343
chemical vapor transport (CVT)
ambipolar diffusion.(3) 359
technique.(1) 25
amorphous Teflon.(8) 827
chromophores.(7) 653
amphoteric doping.(4) 391
clusters.(9) 855
antiphase-domain E
coarsening.(10) 1007, (10) 1015,
boundary.(10) 1021
(11) 1093 elastic properties.(11) 1199
As-implantation.(8) 801
composite materials.(7) 641 electrical characterization ... (3) 255
As-profiles in Si.(8) 801
composites.(6) 557 electrical contacts.(10) 1071
atomic force microscopy.(8) 827
composition control.(11) 1251 electrical properties.(4) 403
atomic hydrogen-mediated
composition variation.(9) 849 electroluminescence.(1) 47
epitaxy.(3) 331
compound semiconductors ... (7) 625 electroluminescence (EL).... (3) 263,
atomic layer epitaxy (ALE).. (2) 185
consolidation.(11) 1159 (6) 503
atomic stacking.(10) 1027
contact.(1) 63 electroluminescent thin
Au/Ge/Ni.(5) 441
contact angle.(8) 741 films.(3) 299
Auger microscopy.(6) 533
contact electrical electromigration.(1) 63
azoles.(8) 7 /9
resistivity.(7) 641 electron.(11) 1151
contamination.(3) 337 electron backscattered diffraction
control of ordering.(2) 125 (EBSD).(9) 893
copper chemical vapor deposition/ electron beam induced current
B
selective deposition.(4) 383 (EBIC).(4) 363
backscattered electrons.(9) 893 copper springs.(7) 641 electron microscopy.(10) 1035,
band gap.(5) 431 creep.(5) 477, (7) 687 (11)1131
barium titanate.(5) 471 critical current density.(11) 1087 electron mobility.(2) 75, (2) 141
barrier height.(12) 1285 (11)1111,(11)1151,(11)1169, electron relaxation time... (12) 1297
(Bax A)Bi03.(11) 1159 (11) 1191 electron-beam induced
BaTi03.(6) 551 current-voltage damage.(3) 341
Be.(6) 577 characteristics.(10) 1071 electronic assembly.(8) 693,
benzocyclobutene based CuSnAg solder joints.(10) 1047 (8) 757
polymer.(8) 819 electroreflectance (ER).(6) 509
Bi-2212.(11) 1191,(11) 1199 ellipsometry.(4) 423,(6) 565
Bi-2223.(11) 1087,(11)1191 energy band offsets.(6) 503
D
Bi-based Epi-Ge.(5) 437
superconductors.(11) 1163 deep level(s).(3) 355, (5) 459, epilayer/substrate
Bi/BiSb.(12) 1255 (7) 659 interface.(7) 649
Bi/CdTe.(12) 1255 deep level transient spectroscopy epitaxial grain growth.(11) 1175
Bi-Sb-Sn isothermal (DLTS).(12) 1343 epitaxy.(2) 75, (3) 251, (9) 861
section.(7) 619 defects.(3) 341, (4) 363, (6) 519, (9) 879, (9) 907, (10) 1043
Bi-Sb-Sn liquidus surface .... (7) 619 (11)1221 erbium.(12) 1269
Bi-Sn.(5) 477 deformation.(7) 611 etch stop.(6) 493
Bi-Sn-Sb.(8) 747 deoxidization.(1) 7 ethylene diamine
blanket tungsten.(10) 1075 deposition mechanism.(4) 383 pyrocatechol.(6) 493
bonded and etchback silicon-on- deposition parameters.(4) 383 exchange coupling.(10) 1043
1385
1386
excimer laser (9) 855 graphite.(9) 855 InAsSb.(6) 503
green emitting light-emitting diodes increased by electrical
(LEDs).(5) 453 resistivity.(7) 641
growth chemistry.(7) 659 indium phosphide.(2) 195
F
growth kinetics.(2) 217, (7) 583 infrared.(6) 497
faceting.(9) 907 growth mechanisms.(2) 69 InGaAs ....(8) 791, (9) 991, (12) 1303
ferroelectric PZT.(12) 1261 growth rates.(10) 1055 (In)GaAs/(Al)GaAs.(2) 225
ferroelectrics.(1) 19, (9) 875, InGaAs/GaAs.(2) 175, (2) 191
H
(9) 879 InGaAs/GaAs multiple quantum
field effect transistors H2 annealing.(5) 437 well (MQW).(9) 975
(FETs).(4) 413 Hall effect.(3) 255, (11) 1245 InGaAs/GaAs/AlGaAs.(2) 115
film-flow resistance.(9) 841 Hall effect measurements .... (3) 245 InGaAs/InP.(2) 87
film-growth mechanisms.(9) 841 halogen.(5) 487 InGaAs(P)/InP.(2) 225
fluorine.(10) 1075 He+ ion implantation.(4) 403 InGaAsP.(11) 1229
fluorine ion-implantation.(1) 13 heavy and light hole (In,Ga)P.(3) 269
flux pinning.(11) 1111, (11) 1183 mobilities.(12) 1359 InGaP/InAlP multiple quantum
fluxless soldering.(6) 533 heteroepitaxy.(10) 1021 well.(3) 359
fracture.(7) 611 heterojunction solar cells.(7) 681 InP.(2) 233, (4) 423, (5) 441,
fracture toughness.(4) 375, heterojunctions.(6) 503 (5) 459, (9) 943, (9) 953, (9) 969
(10) 1047 heterostructure(s).... (3) 341, (4) 423 InP on Si.(2) 135
(9)929,(11) 1203 InP/Si.(2) 201
heterostructure field-effect InSb.(2) 75
transistor.(7) 675 interconnects.(12) 1315
G
Hgj xCdxTe.(9) 963 interdiffusion.(2) 191, (11) 1221
GaAs.(1) 13, (2) 69, (2) 75, (2) 97, HgCdTe.(1) 25, (2) 167, (2) 221, interface(s).(11) 1221, (12) 1255
(2) 121, (2) 185, (4) 391, (4) 397, (11)1221 interface solid state
(6) 577, (8) 809, (9) 943, (9) 991, HgCdTe crystals.(12) 1359 reactions.(9) 953
(12)1335 HgCdTe implantation.(11) 1245 interface state density.(9) 943
(GaAs)n(InAs)n short period high electron mobility transistor interface states.(12) 1291
superlattices.(2) 141 (HEMT).(12) 1303 interfacial diffusion.(8) 729
GaAs metal semiconductor field- high pressure oxidation.(9) 901 interfacial reaction.(8) 721
effect transistor (MESFET) high resolution TEM.(10) 1027 interlevel dielectric.(8) 819
devices.(2) 159 high resolution x-ray diffractometry intermetallic compound(s).. (7) 583,
GaAs molecular beam (HRXRD).(2) 153 (8) 721, (8) 787
epitaxial growth.(10) 1081 high-electron mobility transistor intermetallic growth.(8) 729
GaAs-AlGaAs.(1) 1,(6) 513 (HEMT) structure.(2) 141 intermetallic precipitates.(9) 919
GaAs/InPheterostructure.... (2) 153 high-resolution x-ray diffraction intermetallics.(4) 375, (8) 765
GaAs/Si.(10) 1021 (HRXRD). .(12)1291 internal photoemission.(6) 497
GaAs:In.(11) 1235 hillocks. .(10)1035 intervalence scattering .... (12) 1359
GalnAs.(2) 81 hole effective mass. . (9)935 InxGa, xAs.(9) 983
GalnAsP.(2) 81 hole mobility. .(3) 245 InyGaj yASj_xPx.(11) 1251
GalnP.(2) 125, (4) 403, (5) 431 holography. ... (10) 999 ion implantation.(3) 337, (5) 459
gallium arsenide-germanium hydrothermal oxidation . . (9)883 ionization energy.(9) 935
alloy.(2) 147 irradiation damage.(4) 369
gallium diffusion barrier.. (10) 1081 isothermal aging.(7) 611
gallium nitride.(11) 1209 isothermal capacitance transient
I
GaN.(6) 509 spectroscopy (ICTS).(3) 355
gas source molecular beam epitaxy II-VI semiconductor (2) 101, (3) 283
(GSMBE).(3) 269, (11) 1229, 11-VI ternary and quartemary
(11) 1251 alloys.(3) 307
J
GaSb.(1)7, (2)217 III-IV on Si.(2)201
GeMoW.(9) 991 III-V-IV2 compound.(2) 147 jet vapor deposition.(11) 1239
GeSi.(4) 369 immersion tin.(8) 779 junction field effect transistor
GeSi02 reduction.(5) 437 implantation.(1) 39 (JFET).(2) 233, (8) 809
Ginzburg-Landau Coulomb implantation model.(8) 801
gas.(9) 841 impurities.(3) 337
grain alignment.(11)1151 In activation.(11) 1245
K
grain alignment in situ monitoring.(2) 167
(texturing).(11) 1143 in-situ analysis.(6) 565 kinetics.(10) 999, (10) 1007, (11)
grain boundary in-situ process.(7) 625 1251
diffusion.(12) 1309 In-Sn.(5) 477
grain boundary In008Ga092As/GaAs.(9) 929
misorientation.(9) 893 InAlAs.(9) 969
L
grain growth.(9) 913, (10) 1035 InAlAs/InGaAs
(11)1103 heterojunctions.(12) 1297 laser.(1) 1
grain size.(6) 577 InAlGaAs/GaAs.(2) 207 laser ablation.(3) 347, (9) 849
grain size distribution.(9) 889 InAsP/InP.(12) 1291 (9) 861, (9) 875, (9) 879, (12) 1279
1387
laser ablation film growth ... (9) 841 Mg implants.(8) 809 optical anisotropy (OA).(4) 423
laser-soldering.(8) 765 microscopy.(11) 1151 optical gain.(3) 313
lateral metalorganic molecular microstructure.(5) 477, (8) 715, optocoupler.(9) 925
beam epitaxy (MOMBE).(2) 97 (8) 735, (9) 889, (9) 913, (10) 1043 optoisolator.(9) 925
lattice mismatch.(9) 969 microstructure order-disorder.(5) 431
lattice vibrations.(3) 307 coarsening.(10) 999, (10) 1007 organic-ceramic films.(11) 1239
lattice-mismatched Mie theory.(12) 1349 organometallic epitaxy. (3) 259
heteroepitaxy.(3) 331 minority carrier lifetime.(3) 331 organometallic vapor phase epitaxy
lead free.(7) 635, (8) 693, (8) 701 minority hole mobility.(7) 669 (OMVPE).(2) 125, (2) 185,
(8) 709, (8) 735, (8) 757 mirror surface.(8) 835 (2) 195, (5) 447,(6) 509
lead-free solder(s).... (7) 595, (7) 687 miscibility gap.(9) 963 Ostwald ripening.(10) 999,
(8) 765, (8) 715, 8) 741 misfit dislocation nucleation in (10)1007
levitation force.(11) 1127 ZnSe.(3) 275 oxidation.(6) 533, (8) 709, (9) 883
light emission.(1) 57 misfit stress.(9) 861 oxide films... (9) 861, (9) 875, (9) 913
linear electro-optic mixed-phase silicon.(3) 319 oxide heterostructures.(1) 19
coefficients.(7) 653 mobility.(3) 255 oxygen.(1) 39, (7) 659, (11) 1121
liquid phase additives.(11) 1103 mobility effective mass.(12) 1359 oxygen impurity.(3) 355
liquid phase epitaxy modeling.(10) 1055, (12) 1325 oxygen partial pressure ... (11) 1117
(LPE).(6) 503,(11) 1235 modified random element
local modes.(3) 307 isodisplacement (MREI)
low pressure chemical vapor mode.(3) 307
P
deposition (LPCVD).(3) 319 modulation doping.(3) 299
low pressure metalorganic vapor modulation-doped field-effect p-doping.(3) 259
phase epitaxy.(10) 1061 transistor (MODFET)... (12) 1343 p-type ZnSe.(3) 275, (10) 1071
low pressure organometallic vapor molecular beam deposition .. (6) 577 packaging.(8) 701
phase epitaxy.(2) 159, (7) 649 molecular beam palladium.(11) 1121
low temperature GaAs.(10) 1015 epitaxy (MBE).(1) 1, pancake coils.(11) 1087
LT-GaAs.(6)519 (1) 47,(3)313, (3) 331,(5)465, passivation.(1) 7
luminescence.(3) 289 (6) 519, (7) 625, (7) 675, (11) 1203, patterned substrate.(2) 201
luminescent polymer.(5) 453 (12) 1297,(12) 1343 Pb-free solder.(7) 687
morphological stability.(9) 907 phase diagram.(7) 603, (8) 747,
multi-mode behavior.(3) 307 (11)1135
multi-quantum well laser phase equilibria.(11) 1135
M
structures.(2) 81 phase transformation.(10) 999
magnetization.(11) 1127, multilayers.(9) 879, (10) 1027 (10)1007
(11)1143,(11)1159 multiple quantum well photo-assisted metalorganic vapor
magnetron sputter (MQW).(12) 1291 phase epitaxy.(3) 263
deposition.(11) 1215 photocurrent loss.(7) 681
magnetron sputtering.(12) 1261 photodissociate.(2) 105
mechanical properties.(8) 715 photoluminescence (PL).(3) 251,
N
mechanics.(12) 1325 (3) 259, (3) 269, (3) 341, (3) 347,
melt processing.(11) 1135 n+-GaAs.(7) 669 (4) 409, (6) 513, (5) 459, (6) 565,
melt quenched.(11) 1093 n-type GaAs.(9) 983 (8) 831,(11) 1229,(12) 1303
melt texture.(11) 1121 nano wires.(2) 97 photoluminescence decay.(3) 331
mel t-textured Y123.(11) 1111 nanocrystalline synthesis .... (9) 901 photoreflectance (PR).(5) 465,
melt-texturing.(11) 1127 nanolithography.(3) 289 (6) 509
melting point.(8) 709 nanostructures.(3) 289 physical vapor transport (PVT)
memory applications.(12) 1261 narrow gap semiconductor.(2) 75 technique.(1) 25
metal thick film conductor... (6) 541 Nd1+xBa2_xCu307+8.(11) 1117 piezoelectric.(9) 975
metal/InP interface.(12) 1285 Nd1+xBa2xCu3Oy.(11) 1127 pinning of dislocations by stacking
metallization.(1) 63, (4) 383, nitridation.(10) 1067 faults.(3) 275
(8) 773, (12) 1309, (12) 1335 nitrogen carrier gas.(10) 1061 planar doping.(12) 1343
metalorganic chemical vapor nitrogen doping.(3) 263, (6) 569 plasma etching.(8) 827
deposition (MOCVD).(1) 31, nitrogen p-type doping.(3) 269 plasma immersion.(3) 337
(2) 93, (2) 147, (2) 175, (2) 179, nonlinear susceptibility ... (11) 1209 plasma-enhanced chemical vapor
(2) 115, (2) 233, (2) 239, (3) 299, nonplanar metalorganic vapor deposition (PECVD).(6) 569
(8) 791,(11) 1209,(12) 1269, phase epitaxial growth.(2) 121 polycrystal.(6) 577
(12)1291 nonradiative recombination polymer-matrix.(6) 557
metalorganic center.(3) 355 polymers.(7) 653
decomposition.(11) 1175 nucleation model.(3) 319 polysilicon thin film transistors
metalorganic vapor phase epitaxy (TFT).(1)39
(MOVPE) ....(2) 81, (2) 135, (2) 69, porous Si.(4) 409
(2) 101, (2) 141, (2) 153, (2) 191, positive temperature coefficient
O
(2) 217, (2) 221, (3) 355, (7) 659 resistor (PTCR).(5) 471
metalorganic vapor phase epitaxy ohmic contact(s).(3) 245, (4) 397, precipitate(s).(7)635
(MOVPE) reactor.(2) 167 (5) 441, (9) 953, (9) 983, (9) 991 (10) 1015, (12) 1315, (12) 1349
methyl radical absorption.... (2) 105 optical absorption.(12) 1349 precursors.(2) 69
1388
preferential film growth... (11) 1175 of GaAs.(2) 159 sulfuration.(1) 7
pulsed laser deposition.(9) 855 semi-insulating layers. (2) 135 superconductivity.(9) 841
pyrolysis.(5) 447 semiconducting polymer.(9) 925 superconductor .... (9) 849, (11) 1183
PZT piezoelectric films.(12) 1279 shadow masked metalorganic vapor superlattice(s).(2) 101, (2) 175
phase epitaxy.(2) 225 (3) 283, (5) 465, (9) 841
shock-compaction.(11) 1111 superlattice films.(12) 1255
Si.(5) 437, (8) 801,(12) 1273 supersonic expansion.(3) 347
Q
Si complementary metal oxide surface chemistry.(4) 409
quantitative phase analysis.(11) semiconductor.(10) 1081 surface finish.(8) 779
1093 Si interface control layers ... (9) 943 surface morphology.(2) 195
quantum efficiency.(5) 453 Si ion irradiation.(4) 369 surface passivation.. (3) 347, (5) 487
quantum well(sXQW)... (1) 1, (2) 87, Si nanocrystallites.(3) 347 surface state density.(12) 1285
(2) 191, (6) 513 Si substrates.(6) 551 surface-reaction-limited
quantum well lasers.(2) 115, Si-Co-Ga-As quaternary phase growth.(2) 185
(2)207 diagram.(12) 1335 surfactant.(8) 827
quantum well wire (QWW) Si-Ge alloys.(9) 883, (9) 901 synthesis.(11) 1159, (11) 1163
laser.(2) 121 Si/Co/GaAs.(12) 1335
quantum well wires.(8) 831 SiC whiskers.(6) 557
quasi-stationary SiGe.(1)47, (4) 413,(6) 493
T
diffusion.(10) 1007 SiGe/Si quantum wells.(8) 831
silicide.(6) 497 tertiarybutylphosphine.(2) 233
silicon.(4) 363, (5) 487 tertiarylbutylarsine.(12) 1291
silicon nanoparticles.(1)57 texture.(9) 889, (9) 913, (10) 1035
R
silicon nitride/oxide.(12) 1273 (11) 1169,(11) 1191
radio frequency (rf) silicon surface chemistry.(5) 487 texturing.(11) 1103
sputtering.(9) 983 silicon-germanium growth... (6) 565 thermal coefficient of
radio frequency sputter silicon-on-insulator.(6) 493 resistance.(10) 1067
etching.(11) 1215 silicone matrix.(7) 641 thermal conductivity.(6) 557
Raman scattering.(3) 289 silver.(11) 1121 thermistor.(5) 471
rapid thermal annealing simulation.(3) 341 thermodynamics.(7) 603
(RTA).(1) 1,(1) 13, (4) 397, sintering.(5) 471, (11) 1163 thermomechanical
(5)459,(11) 1245 SiO/Si substrates.(1) 19 processing.(11) 1087
rapid thermal SiOx nanoparticles.(1) 57 thin films.(1) 53, (9) 849,
processing.(11) 1175 Sn-Bi-Ag.(7) 603 (11) 1239,(12) 1261,(12) 1335
rare earths.(12) 1269 Sn-Bi/Cu.(7)611 thin film capacitors.(6) 551
reaction kinetics.(2) 221 Sn-Pb solder.(4) 375 thin film resistors.(10) 1067
reactive ion etching/reactive ion Sn/Cu.(9) 919 thin-film diffusion
beam etching.(4) 363 solar cells.(1) 31, (3) 331 barriers. (12) 1309
recombination velocity.(5) 487 solder(s).(7) 583, (7) 603, (7) 635, third-harmonic
recrystallization.(11) 1169 (7) 641, (7) 687, (8) 693, (8) 701, generation.(11) 1209
reflectance difference spectroscopy (8) 709, (8) 721, (8) 729, (8) 735, three-dimensional
(RDS).(4) 423 (8) 757, (8) 773, (8) 787, (12) 1325 simulation.(12) 1309
refractory metals.(9) 991, solder alloys.(7) 619 three-dimensional interconnected
(11)1215 solder joints.(7) 611 network.(7) 641
reliability.(1) 63, (2) 207, (8) 701 solder materials.(8) 747 TiN.(10) 1075
resistivity (5) 471, (6) 577, (10) 1027 solder paste.(6) 525 tin content.(8) 773
rheology.(6) 525 solderability.(8) 757, (8) 779 tin-silver-copper eutectic.(7) 595
Rodrigues-Frank (R-F) solid phase crystallization.(1) 39 titanium germanide.(4) 413
space.(9) 893 solid solution(s).... (9) 963, (11) 1117 titanium nitride.(12) 1309
Rutherford backscattering solidification.(7) 603, (11) 1093, titanium silicide.(4) 413
(RBS).(2) 175 (11) 1135 Tl-1223.(11) 1191
sputtering.(1) 53 Tl-Ba-Ca-Cu-0.(11) 1151
stable delivery rate.(2) 93 transmission electron microscopy
S stacking faults.(3) 255, (11) 1111 (TEM)..(2) 153, (9) 969, (11) 1111,
stimulated emission.(3) 313 (12) 1315
S.(1)7 strain.(9) 975 trap state density.(1) 39
Sb compounds.(5) 447 strain relaxation.(2) 191, (3) 275 trilayers.(9) 841
scanning electron strain tensile tests.(9) 919 trimethylindium (TMIn).(2) 93
microscopy.(7) 595 strained layer.(2) 201, (2) 207 two-dimensional electron gases
scattering factor.(12) 1359 strength.(7) 635 (2DEG).(12) 1297
scattering mechanisms .... (12) 1359 structural transition.(10) 1027
screening length.(12) 1359 submicron gratings.(2) 121
secondary ion mass spectroscopy substrate orientation.(2) 195
(SIMS).(2) 175, (3) 355 substrate surface
U
seeding.(11) 1127 characteristics.(11) 1175
selective area.(2) 115 substrate surface ultrasonic
selective area epitaxy roughness.(10) 1047 characterization.(11) 1199