Table Of Content

vourna.or CRYSTAL ELSEVIER Journal of Crystal Growth 217 (2000) 458-461 www.elsevier.nl/locate/jcrysgro Author index Abdel-Motaleb, I.M., S. Pal and P. Desai, solubility and interactions of aprotinin Characterization of ZnSe/Ge material (BPTI) solutions in H,O and D,O 217 (2000) 311 growth using the atomic force micro- Burger, A., see Fornaro, L. 217 (2000) 263 scope 217 (2000) 366 Abe, S. and K. Masumoto, Growth Chattopadhyay, K., see Fornaro, L. 217 (2000) 263 and structural characterization of a Chen, L., see Zhang, W. 217 (2000) 157 Pb, _.Ca,S,-,Se,/PbS heterostructure Cheng, T.S., see Xu, H.Z. 217 (2000) 228 prepared by hot-wall epitaxy 217 (2000) 125 Courrol, L.C., see Ranieri, I1.M. 217 (2000) 145 Ahmed, M., see Bourret-Courchesne, E. 217 (2000) 47 Albrecht-Schmitt, T.E., P.M. Almond, A.J. Dalas, E., see Koutsopoulos, S. 217 (2000) 410 Illies, C.C. Raymond and C.E. Talley, Dalas, E., see Manoli, F. 217 (2000) 416 Preparation of single crystals of binary Dalas, E., see Manoli, F. 217 (2000) 422 and ternary transition metal and ura- Dasgupta, S., see Iyer, G.H. 217 (2000) 429 nium arsenides and antimonides from re- De Feraudy, M.-F. and G. Torchet, Defor- active-fluxes 217 (2000) 250 mation and twin faults in large argon Almond, P.M., see Albrecht-Schmitt, T.E. 217 (2000) 250 clusters 217 (2000) 449 Amimer, K., M. Eddrief and C.A. Sébenne, Deng, B., see Lu, Q. 217 (2000) 271 Stress relaxation at forming Desai, P., see Abdel-Motaleb, I.M. 217 (2000) 366 GaSe-Si(1 1 1) interfaces 217 (2000) 371 Dinh, S.M., see Variankaval, N.E. 217 (2000) 320 Ansell, B.J., see Xu, H.Z. 217 (2000) 228 Dixit, V.K., B.V. Rodrigues and H.L. Bhat, Arato, E., see Ratto, M. 217 (2000) 233 Growth of InSb,; - .,Bi, crystals by rota- Arnold, J., see Bourret-Courchesne, E. 217 (2000) 47 tory Bridgman method and their charac- Astier, J.-P., see Budayova-Spano, M. 217 (2000) 311 terization 217 (2000) 40 Dutta, P.S. and A.G. Ostrogorsky, Segrega- Bao, C.L., see Zhang, M.H. 217 (2000) 355 tion of Ga in Ge and InSb in GaSb 217 (2000) 360 Barnett, S.A., see Guyer, J.E. 217 (2000) 1 Beaumont, B., see Lahreche, H. 217 (2000) 13 Ebel, C., see Budayova-Spano, M. 217 (2000) 311 Bechhoefer, J., see Hutter, J.L. 217 (2000) 332 Ebinuma, T., see Uchida, T. 217 (2000) 189 Bell, A., see Xu, H.Z. 217 (2000) 228 Eddrief, M., see Amimer, K. 217 (2000) 371 Bell, J.A., see lyer, G.H. 217 (2000) 429 Edgar, J.H., see Wei, C.H. 217 (2000) 109 Berthold, T., H. Bodinger and J. Stielfried, Edgar, J.H., see Xie, Z.Y. 217 (2000) 115 Growth of single crystalline Nal plates 217 (2000) 441 Ellis, A.B., see Saulys, D. 217 (2000) 287 Bhat, H.L., see Dixit, V.K. 217 (2000) 40 Bédinger, H., see Berthold, T. 217 (20004)4 1 Fornaro, L., L. Luchini, M. K6ncke, L. Mus- Bourret-Courchesne, E., Q. Ye, D.W. Peters, sio, E. Quagliata, K. Chattopadhyay and J. Arnold, M. Ahmed, S.J.C. Irvine, R. A. Burger, Growth of mercuric iodide Kanjolia, L.M. Smith and S.A. Rush- platelets for X-ray room temperature de- worth, Pyrolysis of dimethylhydrazine tectors in the HgI,-HI-H,O system 217 (2000) 263 and its co-pyrolysis with triethylgallium 217 (2000) 47 Foxon, C.T., see Xu, H.Z. 217 (2000) 228 Bourret-Courchesne, E., see Graupner, R. 217 (2000) 55 Fu, Y., see Sun, X. 217 (2000) 404 Budayova-Spano, M., S. Lafont, J.-P. Astier, Fujita, T., see Ranieri, I.M. 217 (2000) 145 C. Ebel and S. Veesler, Comparison of Fujita, T., see Ranieri, I.M. 217 (2000) 151 0022-0248/00/$s-e e front matter © 2000 Elsevier Science B.V. All rights reserved. PII: S0022-0248(00)00579-0 Author index 459 Fukuda, T., see Ranieri, I.M. 217 (2000) 145 Kanjolia, R., see Bourret-Courchesne, E. 217 (2000) 47 Fukuda, T., see Ranieri, I.M. 217 (2000) 151 Kasuga, M., see Yoshioka, Y. 217 (20001)0 2 Kawabe, M., see Xu, H.Z. 217 (20002)2 8 Gallagher, H.G., see Wells, J.-P.R. 217 (2000) 302 Kaytancioglu, O., see Mohan, R. 217 (20003)9 3 Gao, Z., see Sun, X. 217 (2000) 404 Kean, A.H., see Najda, S.P. 217 (20003)4 5 Gay, B.P., see Yoon, S.F. 217 (2000) 33 Khoudiakov, M., see Saulys, D. 217 (20002)8 7 Gibart, P., see Lahréche, H. 217 (2000) 13 Kieda, N., see Otani, S. 217 (20003)7 8 Graupner, R., Q. Ye, T. Warwick and E. Kim, D.H., see Jeong, H.T. 217 (20002)1 7 Bourret-Courchesne, Study of interface Kim, D.J., J.S. Kim, J.N. Kim and M.S. Jang, reactions between Si and GaN at high Growth and characterization of Li, VO, temperatures using scanning photo- single crystals by the Czochralski method 217 (20003)8 3 electron microscopy and X-ray absorp- Kim, J.N., see Kim, D.J. 217 (20003)8 3 tion spectroscopy 217 (2000) 55 Kim, J.S., see Kim, D.J. 217 (20003)8 3 Guo, X.F., see Liu, Y.C. 217 (2000) 211 Kim, S.H., see Jeong, H.T. 217 (20002)1 7 Guyer, J.E., S.A. Barnett and P.W. Voo- Kim, W.T., see Jeong, H.T. 217 (20002)1 7 rhees, Morphological evolution of Koncke, M., see Fornaro, L. 217 (20002)6 3 Ino. 26Gao.74As grown under compres- Korsukova, M.M., see Otani, S. 217 (20003)7 8 sion on GaAs(00 1) and under tension on Koster, J.N., see Yin, H. 217 (20001)7 0 InP(00 1) 217 (2000) 1 Koutsopoulos, S. and E. Dalas, The effect of acidic amino acids on hydroxyapatite Han, J., see Theodoropoulos, C. 217 (2000) 65 crystallization 217 (2000) 410 Han, T.P.J., see Wells, J.-P.R. 217 (2000) 302 Kuech, T.F., see Saulys, D. 217 (2000) 287 Han, Y.J., see Zhang, M.H. 217 (2000) 355 Harrison, I., see Xu, H.Z. 217 (2000) 228 Lafont, S., see Budayova-Spano, M. 217 (20003)1 1 Hasegawa, M. and T. Yagi, Growth of ni- Lahreche, H., P. Vennégués, O. Tottereau, tride crystals in a supercritical nitrogen M. Laiigt, P. Lorenzini, M. Leroux, B. fluid under high pressures and high tem- Beaumont and P. Gibart, Optimisation peratures yield using diamond anvil cell of AIN and GaN growth by metalor- and YAG laser heating 217 (2000) 349 ganic vapour-phase epitaxy (MOVPE) He, K.M., see Wu, H.Z. 217 (2000) 131 on Si (111) 217 (2000) 13 Hsiao, C.C., see Yin, C.P. 217 (2000) 201 Laiigt, M., see Lahréche, H. 217 (2000) 13 Hu, J., see Lu, Q. 217 (2000) 271 Leroux, M., see Lahréche, H. 217 (2000) 13 Hu, J., see Wu, R. 217 (2000) 274 Li, L.H., see Pan, Z. 217 (2000) 26 Huang, D.M., see Wu, H.Z. 217 (2000) 131 Li, L.Y., see Xie, Z.Y. 217 (20001)1 5 Huang, J., see Wang, S.W. 217 (2000) 388 Li, Y., see Lu, Q. 217 (20002)7 1 Huang, Q., see Zhang, M.H. 217 (2000) 355 Li, Y., see Sun, X. 217 (20004)0 4 Hui, Z., see Zhang, W. 217 (2000) 157 Lin, T.F., see Yin, C.P. 217 (20002)0 1 Hutter, J.L. and J. Bechhoefer, Banded Lin, X., see Liu, Y.C. 217 (20002)1 1 spherulitic growth in a liquid crystal 217 (2000) 332 Lin, Y.W., see Pan, Z. 217 (2000) 26 Liu, J., see Zhang, W. 217 (20001)5 7 lakimov, T., see Yakimova, R. 217 (2000) 255 Liu, X., see Zhang, W. 217 (20001)5 7 Illies, A.J., see Albrecht-Schmitt, T.E. 217 (2000) 250 Liu, Y.C., X. Lin, X.F. Guo, G.C. Yang and Inkson, B.J., see Jeong, H.T. 217 (2000) 217 Y.H. Zhou, Direct observation of phase Irvine, S.J.C., see Bourret-Courchesne, E. 217 (2000) 47 transformation layers in the undercooled Iyer, G.H., S. Dasgupta and J.A. Bell, Ionic hypoperitectic Ti,7Al,, alloy 217 (20002)1 1 strength and intermolecular contacts in Liu, Z., see Ranieri, 1.M. 217 (2000) 151 protein crystals 217 (2000) 429 Lorenzini, P., see Lahréche, H. 217 (2000) 13 Lu, L.W., see Zhang, M.H. 217 (2000) 355 Jacob, K.1., see Variankaval, N.E. 217 (2000) 320 Lu, Q., J. Hu, K. Tang, B. Deng, Y. Qian and Jacobsson, H., see Yakimova, R. 217 (2000) 255 Y. Li, The synthesis of CuFeSe, through Jang, M.S., see Kim, D.J. 217 (2000) 383 a solventothermal process 217 (2000) 271 Janzén, E., see Yakimova, R. 217 (2000) 255 Luchini, L., see Fornaro, L. 217 (2000) 263 Jeong, H.T., S.H. Kim, W.T. Kim, D.H. Kim Lutz, J.L. and G.D. Mendenhall, Diffusion and B.J. Inkson, Growth of a decagonal coefficients by NMR-spin echo methods Als oNi;;Co,,5 single quasicrystal by the for the systems water-ammonium chlor- Czochralski method 217 (2000) 217 ide, water-succinonitrile, and acetone- Joshkin, V., see Saulys, D. 217 (2000) 287 succinonitrile 217 (2000) 183 460 Author index Manoli, F. and E. Dalas, Spontaneous pre- Ranieri, I.M., K. Shimamura, K. Nakano, cipitation of calcium carbonate in the T. Fujita, Z. Liu, N. Sarukura and T. presence of chondroitin sulfate 217 (20004)1 6 Fukuda, Crystal growth of Ce: LiLuF, Manoli, F. and E. Dalas, Calcium carbonate for optical applications 217 (2000) 151 crystallization on xiphoid of the cuttle- Ratto, M., E. Ricci and E. Arato, Mechanism fish 217 (20004)2 2 of oxidation/deoxidation of liquid sili- Masumoto, K., see Abe, S. 217 (20001)2 5 con: theoretical analysis and interpreta- McCaughan, L., see Saulys, D. 217 (20002)8 7 tion of experimental surface tension data 217 (2000) 233 Mendenhall, G.D., see Lutz, J.L. 217 (20001)8 3 Raymond, C.C., see Albrecht-Schmitt, T.E. 217 (2000) 250 Mitsuhashi, T., see Otani, S. 217 (20003)7 8 Ricci, E., see Ratto, M. 217 (2000) 233 Moffat, H.K., see Theodoropoulos, C. 217 (2000) 65 Rodrigues, B.V., see Dixit, V.K. 217 (2000) 40 Mohan, R., O. Kaytancioglu and A.S. Myer- Rong, L., T. Yamane and N. Niimura, son, Diffusion and cluster formation in Measurement and control of the crystal supersaturated solutions of ammonium growth rate of tetragonal hen egg-white sulfate at 298K 217 (2000) 393 lysozyme imaged with an atomic force Morato, S.P., see Ranieri, 1.M. 217 (2000) 145 microscope 217 (2000) 161 Rushworth, S.A., see Bourret-Courchesne, E. 217 (2000) 47 Mountziaris, T.J., see Theodoropoulos, C. 217 (2000) 65 Mussio, L., see Fornaro, L. 217 (2000) 263 Sarukura, N., see Ranieri, I.M. 217 (2000) 151 Myerson, A.S., see Mohan, R. 217 (2000) 393 Saulys, D., V. Joshkin, M. Khoudiakov, T.F. Kuech, A.B. Ellis, S.R. Oktyabrsky and Najda, S.P. and A.H. Kean, Molecular beam L. McCaughan, An examination of the epitaxy growth and characterisation of surface decomposition chemistry of lith- (AlGa)InP using GaP as a phosphorus ium niobate precursors under high vac- source 217 (2000) 345 uum conditions 217 (2000) 287 Nakano, K., see Ranieri, 1.M. 217 (2000) 145 Sebenne, C.A., see Amimer, K. 217 (2000) 371 Nakano, K., see Ranieri, I.M. 217 (2000) 151 Shang, S.X., see Wang, S.W. 217 (2000) 388 Narita, H., see Uchida, T. 217 (2000) 189 Shi, B.Q. and C.W. Tu, Evaluation of tem- Nemesics, A., The initial phase shift phe- perature rise on semiconductor surfaces nomenon of RHEED oscillations 217 (2000) 223 associated with scanning Ar* lasers 217 (2000) 82 Numura, N., see Rong, L. 217 (2000) 161 Shi, B.Q. and C.W. Tu, Investigations on the mechanisms responsible for Ar” -laser- Oktyabrsky, S.R., see Saulys, D. 217 (2000) 287 induced growth enhancement of GaAs Ostrogorsky, A.G., see Dutta, P.S. 217 (2000) 360 by chemical beam epitaxy 217 (2000) 91 Otani, S.. M.M. Korsukova, T. Mitsuhashi Shimamura, K., see Ranieri, 1.M. 217 (2000) 145 and N. Kieda, Floating zone growth and Shimamura, K., see Ranieri, I.M. 217 (2000) 151 high-temperature hardness of YB, and Shimizu, K., see Yoshioka, Y. 217 (2000) 102 YB, single crystals 217 (2000) 378 Smith, L.M., see Bourret-Courchesne, E. 217 (2000) 47 Stielfried, J., see Berthold, T. 217 (2000) 441 Pal, S., see Abdel-Motaleb, I.M. 217 (2000) 366 Sun, X., X. Xu, Z. Gao, Y. Fu, S. Wang, H. Pan, Z., Y.T. Wang, L.H. Li, W. Zhang, Y.W. Zeng and Y. Li, Effect of EDTA on the Lin, Z.Q. Zhou and R.H. Wu, X-ray light scatter in KDP crystal 217 (2000) 404 double-crystal characterization of the Syvajarvi, M., see Yakimova, R. 217 (2000) 255 strain relaxation in GaAs/GaN,As-,, / GaAs(00 1) sandwiched structures 217 (2000) 26 Takagaki, K., see Yoshioka, Y. 217 (2000) 102 Peters, D.W., see Bourret-Courchesne, E. 217 (2000) 47 Talley, C.E., see Albrecht-Schmitt, T.E. 217 (2000) 250 Tang, K., see Lu, Q. 217 (2000) 271 Qian, Y., see Zhang, W. 217 (2000) 157 Theodoropoulos, C., T.J. Mountziaris, H.K. Qian, Y., see Lu, Q. 217 (2000) 271 Moffat and J. Han, Design of gas inlets Qiu, D.J., see Wu, H.Z. 217 (2000) 131 for the growth of gallium nitride by Quagliata, E., see Fornaro, L. 217 (2000) 263 metalorganic vapor phase epitaxy 217 (2000) 65 Tong, L. Growth of high-quality Raback, R., see Yakimova, R. 217 (2000) 255 Y,0,;-ZrO, single-crystal optical fibers Ranieri, I.M., K. Shimamura, K. Nakano, for ultra-high-temperature fiber-optic T. Fujita, L.C. Courrol, S.P. Morato and sensors 217 (2000) 281 T. Fukuda, Growth and characterization Torchet, G., see de Feraudy, M.-F. 217 (2000) 449 of LiGd, _,-,Y,Nd,F, single crystals 217 (2000) 145 Tottereau, O., see Lahréche, H. 217 (2000) 13 Author index Tsvetkov, E.G. and V.1. Tyurikov, Specific Xu, H.Z., Z.G. Wang, I. Harrison, A. Bell, features of seeding and growth of bulk B.J. Ansell, A.J. Winser, T.S. Cheng, C.T. polar crystals 217 (2000) 138 Foxon and M. Kawabe, Photolumines- Tu, C.W., see Shi, B.Q. 217 (2000) 82 cence and optical quenching of photo- Tu, C.W., see Shi, B.Q. 217 (2000) 91 conductivity studies on undoped GaN Tyurikov, V.L., see Tsvetkov, E.G. 217 (2000) 138 grown by molecular beam epitaxy 217 (2000) 228 Xu, X., see Sun, X. 217 (2000) 404 Uchida, T., T. Ebinuma and H. Narita, Ob- servations of CO,-hydrate decomposi- Yagi, T., see Hasegawa, M. 217 (2000) 349 tion and reformation processes 217 (2000) 189 Yakimova, R., M. Syvajarvi, T. lakimov, H. Jacobsson, R. Raback, A. Vehanen and Variankaval, N.E., K.Il. Jacob and S.M. E. Janzen, Polytype stability in seeded Dinh, Characterization of crystal forms sublimation growth of 4H-SiC boules 217 (2000) 255 of B-estradiol - thermal analysis, Raman Yamane, T., see Rong, L. 217 (2000) 161 microscopy, X-ray analysis and solid- Yang, G.C., see Liu, Y.C. 217 (20002)1 1 state NMR 217 (2000) 320 Yang, Z., see Zhang, W. 217 (2000) 157 Veesler, S., see Budayova-Spano, M. 217 (20003)1 1 Ye, Q., see Bourret-Courchesne, E. 217 (2000) 47 Ye, Q., see Graupner, R. 217 (2000) 55 Vehanen, A., see Yakimova, R. 217 (2000) 255 Yin, C.P.,C.C. Hsiao and T.F. Lin, Improve- Vennégues, P., see Lahréche, H. 217 (2000) 13 ment in wafer temperature uniformity Voorhees, P.W., see Guyer, J.E. 217 (2000) 1 and flow pattern in a lamp heated rapid thermal processor 217 (2000) 201 Wang, A., see Wu, R. 217 (2000) 274 Yin, H. and J.N. Koster, Double-diffusive Wang, H., see Wang, S.W. 217 (2000) 388 convective flow and interface morpho- Wang, M., see Wang, S.W. 217 (2000) 388 logy during transient Ga-5% In alloy Wang, S., see Sun, X. 217 (2000) 404 melting 217 (2000) 170 Wang, S.W., H. Wang, S.X. Shang, J. Huang, Yip, K.H., see Yoon, S.F. 217 (2000) 33 Z. Wang and M. Wang, PZT thin films Yoon, S.F., K.H. Yip, H.Q. Zheng and B.P. prepared by chemical solution decompo- Gay, Effect of deep levels on the charac- sition using a Bi,Ti,O-, buffer layer 217 (2000) 388 teristics of InGa,_,P»9/GaIp ngopAs / Wang, W.X., see Zhang, M.H. 217 (2000) 355 GaAs high-electron mobility transistor Wang, Y.T., see Pan, Z. 217 (2000) 26 grown by solid-source MBE 217 (2000) 33 Wang, Z., see Wang, S.X. 217 (2000) 388 Yoshioka, Y., K. Shimizu, K. Takagaki and Wang, Z.G., see Xu, H.2Z. 217 (2000) 228 M. Kasuga, Verification of singular Warwick, T., see Graupner, R. 217 (2000) 55 plane formation in CdTe homoepitaxy 217 (2000) 102 Wei, C.H. and J.H. Edgar, Thermodynamic Yu, Q.M., see Xie, Z.Y. 217 (2000) 115 analysis of Ga,B,_,N grown by Yu, W., see Zhang, W. 217 (2000) 157 MOVPE 217 (2000) 109 Wei, C.H., see Xie, Z.Y. 217 (2000) 115 Zeng, H., see Sun, X. 217 (20004)0 4 Wells, J.-P.R., H.G. Gallagher and T.P.J. Zhang, L., see Zhang, W. 217 (2000) 157 Han, Crystal-growth and spectroscopy Zhang, M.H., Y.J. Han, Y.H. Zhang, Q. of Er** ions in calcium gallogermanate 217 (2000) 302 Huang, C.L. Bao, W.X. Wang, J.M. Winser, A.J., see Xu, H.Z. 217 (2000) 228 Zhou and L.W. Lu, Evolution from Wu, H.Z., K.M. He, DJ. Qiu and D.M. point defects to arsenic clusters in low- Huang, Low-temperature epitaxy of temperature grown GaAs/AlGaAs mul- ZnO films on Si(00 1) and silica by react- tiple quantum wells 217 (2000) 355 ive e-beam evaporation 217 (2000) 131 Zhang, W., see Pan, Z. 217 (2000) 26 Wu, R., C. Xie, H. Xia, J. Hu and A. Wang, Zhang, W., Z. Yang, J. Liu, L. Zhang, Z. Hui, The thermal physical formation of ZnO W. Yu, Y. Qian, L. Chen and X. Liu, nanoparticles and their morphology 217 (2000) 274 Room temperature growth of nanocrys- Wu, R.H., see Pan, Z. 217 (2000) 26 talline tin (II) selenide from aqueous solution 217 (2000) 157 Xia, H., see Wu, R. 217 (2000) 274 Zhang, Y.H., see Zhang, M.H. 217 (2000) 355 Xie, C., see Wu, R. 217 (2000) 274 Zheng, H.Q., see Yoon, S.F. 217 (2000) 33 Xie, Z.Y., C.H. Wei, L.Y. Li, Q.M. Yu and Zhou, J.M., see Zhang, M.H. 217 (2000) 355 J.H. Edgar, Gaseous etching of 6H-SiC Zhou, Y.H., see Liu, Y.C. 217 (2000) 211 at relatively low temperatures 217 (2000) 115 Zhou, Z.Q., see Pan, Z. 217 (2000) 26 sourna.or CRYSTAL GROWTH ELSEVIER Journal of Crystal Growth 217 (2000) 462-463 www.elsevier.nl/locate/jcrysgro Subject index Convection 170, 201 ~— - of sodium iodide 441 — by zone melting Device characterization ~ - of zirconia 281 - electronic materials 228, 263, 345 Morphological stability - heterojunctions 26, 33 - of 4H silicon carbide 255 — quantum wells 131, 355 - of 4-cyano 4’-decyloxybiphenyl 332 Diffusional control - of indium gallium arsenide | - of heat 91 - of polar crystals 138 - of mercuric iodide 263 - of oxygen transport 233 Nucleation - of segregation 360 - of aluminum nitride 13 - of water ammonium chloride 183 - of ammonium sulphate 393 - of gallium nitride 13, 55 Electronic materials, see Device characterization ~ of metastable phases 211 Epitaxy, see Thin film growth Numbers — Peclet 233 Heat flow control - of laser irradiation 82 Phase diagrams - of wafers 201 - of aprotinin 311 Heterojunctions, see Device characterization Precursor Hydrodynamics, see Convection - for gallium nitride 47 Kinetics - of growth 65, 91, 102, 138,145, 189, 223, 255, 320, 416, 422 Quantum wells, see Device characterization - of interface control 131, 223 - of nucleation 131, 189, 211, 274, 416, 422 Solid growth technique - by polymorphic transformation Lasers, crystals for ~ - of beta-estradiol 320 - infrared 145 Solution growth technique - ultraviolet 151 — by constant composition method 416, 422 - by flux method Melt growth technique - - of copper iron selenide 271 - by Bridgman-Stockbarger method - - of hydroxyapatite 410 - - of calcium gallogermanite 302 - - of uranium arsenide and antimonide 250 - — of gallium antimonide 360 - by low temperature method - - of germanium 360 - - of hen egg white lysozyme 161 - -— of indium bismuth antimonide 40 - - of potassium dihydrogen phosphate 404 - by Czochralski method - - of protein crystals 429 - - of aluminum nickel cobalt 217 - - of tin selenide 157 — — of lithium vanadate 383 Surface morphology - by floating zone method - of gallium nitride 349 - - of yttrium borate 378 Surface structure - by uniaxial solidification - of silicon carbide 115 0022-0248/00/$s-e e front matter © 2000 Elsevier Science B.V. All rights reserved. PII: S0022-0248(00)00580-7 Subject index Thin film growth, epitaxy - - through metalorganic chemical vapor deposition - by chemical solution decomposition 388 - — — of aluminum nitride 13 ~ by metalorganic molecular beam epitaxy - - - of gallium boron nitride 109 — - of lithium niobate 287 - — — of gallium nitride 13, 40, 55, 65, 228 —- by molecular beam epitaxy - - - of zinc selenide 366 - — of aluminum gallium arsenide 355 - - of aluminum gallium indium phosphide 345 Vapor growth technique — — of gallium arsenide 26, 355 — by evaporation and condensation - - of gallium nitride arsenide 26 - - of cadmium telluride 102 ~- — of gallium selenide 371 — — of lead calcium sulphide selenide 125 — — of indium gallium arsenide 1, 33 -— — theory of gas solid thermodynamics 109 - - of indium gallium phosphide 33 Vapor-liquid-solid growth - - of zinc oxide 131 - of free argon clusters 449 - by vapor phase epitaxy - - through chemical vapor deposition Whisker growth - — - of silicon carbide 115 - of zinc oxide 274 - — - theory of simultaneous etching and growth 98