Journal of Crystal Growth 2000: Vol 213 Index

8 Pages·2000·1.9 MB·English

sounna.or CRYSTAL
ELSEVIER Journal of Crystal Growth 213 (2000) 421-425
www.elsevier.nl/locate/jcrysgro
Author index
Abril, E.J., see Villar, C. 213 (20002)1 4 Zhu, M. Wang, X.S. Wu, S.S. Jiang and
Aguilar, M., see Villar, C. 213 (20002)1 4 D. Feng, Deposition and crystalliza-
Ahn, H.S., see Barnes, M.C. 213 (2000) 83 tion of amorphous GaN buffer layers
Akaishi, M., see Shaji Kumar, M.D. 213 (20002)0 3 on Si(1 1 1) substrates 213 (2000) 27
Akaishi, M., see Sun, L. 213 (20004)1 1 Chen, X.L., see Cao, Y.G. 213 (2000) 198
Amberg, G., see Tonhardt, R. 213 (20001)6 1 Chen, X.L., see Li, J.Y. 213 (2000) 408
Arora, B.M., see Sharma, T.K. 213 (20002)4 1 Chen, Z.Z., see Chen, P. 213 (2000) 27
Arora, B.M., see Chandvankar, S.S. 213 (20002)5 0 Cheng, B., see Li, D. 213 (2000) 308
Cheng, Z., see Zhang, S. 213 (2000) 415
Barnes, M.C., D.-Y. Kim, H.S. Ahn, C.O. Chian, C.H., see Lan, C.W. 213 (2000) 395
Lee and N.M. Hwang, Deposition Choi, Y., see Kim, C. 213 (2000) 235
mechanism of gold by thermal evapor-
ation: approach by charged cluster Dalas, E., see Pierri, E. 213 (2000) 93
model 213 (2000) 83 Ding, D., see Liu, H.-Y. 213 (2000) 193
Bartosch, K., see Rauls, M. 213 (2000) 116
Behr, G., see Bitterlich, H. 213 (2000) 319 Fainberg, J., see Frank, Ch. 213 (2000) 10
Bitterlich, H., W. Loser, G. Behr, G. Graw, Fan, T.W., J.J. Qian, J. Wu, L.Y. Lin and J.
W. Yang-Bitterlich, U. Kramer and L. Yuan, Tentative analysis of Swirl de-
Schultz, Single-crystal growth of fects in silicon crystals 213 (2000) 276
Tho 4Yo.6Ni2B,C compounds by the Fatemi, M., see Jernigan, G.G. 213 (2000) 299
floating-zone method 213 (20003)1 9 Feigelson, R.S., see Petrosyan, A.M. 213 (2000) 103
Boleslawski, M.P., see Zhang, L. 213 (2000) 1 Feng, D., see Chen, P. 213 (2000) 27
Botha, J.R., see Wagener, M.C. 213 (2000) 51 Feth, S., see Su, C.-H. 213 (2000) 267
Bouropoulos, N.Ch. and P.G. Kou- Frank, Ch., K. Jacob, M. Neubert, P.
tsoukos, Spontaneous precipitation of Rudolph, J. Fainberg and G. Miller,
struvite from aqueous solutions 213 (2000) 381 Temperature field simulation and cor-
relation to the structural quality of
Cao, Y.G., X.L. Chen, Y.C. Lan, J.Y. Li, semi-insulating GaAs crystals grown
Y.P. Xu, T. Xu, Q.L. Liu and J.K. Li- by the vapour pressure controlled
ang, Blue emission and Raman scatter- Czochralski method (VCz) 213 (2000) 10
ing spectrum from AIN nanocrystalline Fuenzalida, V.M., Pulsed deposition and
powders 213 (2000) 198 postnucleation: model for the average
Cao, Y.G., see Li, J.Y. 213 (2000) 408 cluster size as a function of the number
Chandrasekaran, K.S., see Chandvankar, of pulses 213 (2000) 157
S.S. 213 (2000) 250 Fujita, K., see Villar, C. 213 (2000) 214
Chandvankar, S.S., T.K. Sharma, A.P.
Shah, K.S. Chandrasekaran, B.M. George, M.A., see Su, C.-H. 213 (2000) 267
Arora, A.K. Kapoor, D. Verma and Gheorghies, C., The electrolytic prepara-
B.B. Sharma, Indium thallium phosph- tion and physical characterization of
ide: experiments versus predictions 213 (2000) 250 ZrTiO, films 213 (2000) 112
Chen, H., see Zhang, S. 213 (2000) 415 Gokhale, M.R., see Sharma, T.K. 213 (2000) 241
Chen, P., S.Y. Xie, Z.Z. Chen, Y.G. Zhou, Graw, G., see Bitterlich, H. 213 (2000) 319
B. Shen, R. Zhang, Y.D. Zheng, J.M. Gribenyukov, A.I., see Verozubova, G.A. 213 (2000) 334
0022-0248/00/$s-e e front matter © 2000 Elsevier Science B.V. All rights reserved.
PII: $S0022-0248(00)00476-0
422 Author index
Grousson, R., see Wang, X.-L. 213 (2000) 19 Jiang, X., see Xia, Y. 213 (2000) 328
Gu, S.L., see Zhang, L. 213 (2000) 1 Jimenez-Sandoval, S., see Rodriguez, M.E. 213 (2000) 259
Guo, X.J., see Wen, C.-Y. 213 (2000) 150
Kang, K.Y., see Lee, J.J. 213 (2000) 33
Han, J., see Zhang, S. 213 (20004)1 5 Kang, T.W., see Lee, J.J. 213 (2000) 33
Harris, S., Surfactant-moderated growth Kapoor, A.K., see Chandvankar, S.S. 213 (2000) 250
on a vicinal surface 213 (2000) 75 Karapetyan, H.A., see Petrosyan, A.M. 213 (2000) 103
Hartwig, J., see Morelhao, S.L. 213 (2000) 288 Katz, J.L., see Parsiegla, K.I. 213 (2000) 368
Hayakawa, Y., Y. Okano, A. Hirata, N. Kim, C., M. Yang, W. Lee, J. Yi, S. Kim, Y.
Imaishi, Y. Kumagiri, X. Zhong, X. Xie, Choi, T.-K. Yoo and S.T. Kim, Forma-
B. Yuan, F. Wu, H. Liu, T. Yamaguchi tion and characteristics of inversion
and M. Kumagawa, Experimental and domain in GaN grown by hydride va-
numerical investigations on dissolution por-phase epitaxy 213 (20002)3 5
and recrystallization processes of Kim, D.-Y., see Jeon, J.-D. 213 (2000) 79
GaSb/InSb/GaSb under microgravity Kim, D.-Y., see Barnes, M.C. 213 (2000) 83
and terrestrial conditions 213 (2000) 40 Kim, H.S., see Lee, J.J. 213 (2000) 33
He, Y., see Su, G. 213 (2000) 99 Kim, K.H., see Lee, J.J. 213 (2000) 33
Hirata, A., see Hayakawa, Y. 213 (2000) 40 Kim, S., see Kim, C. 213 (20002)3 5
Hofmann, L., A. Knauer, I. Rechenberg, U. Kim, S.T., see Kim, C. 213 (20002)3 5
Zeimer and M. Weyers, Comparison of Kind, M., see Rauls, M. 213 (20001)1 6
binary and ternary growth over Knauer, A., see Hofmann, L. 213 (20002)2 9
trenches using MOVPE 213 (2000) 229 Korotkova, V.V., see Verozubova, G.A. 213 (20003)3 4
Hofmeister, H., see Nepijko, S.A. 213 (2000) 129 Koutsoukos, P.G., see Bouropoulos, N.Ch. 213 (20003)8 1
Hoshikawa, K., see Huang, X. 213 (2000) 283 Kramer, U., see Bitterlich, H. 213 (20003)1 9
Huang, C., see Li, D. 213 (2000) 308 Kuch, St., see Rauls, M. 213 (20001)1 6
Huang, J.H., see Wen, C.-Y. 213 (2000) 150 Kuech, T.F., see Zhang, L. 213 (2000) 1
Huang, W.D., S. Naritsuka and T. Kumagawa, M., see Hayakawa, Y. 213 (2000) 40
Nishinaga, Vertical Bridgman growth Kumagiri, Y., see Hayakawa, Y. 213 (2000) 40
of Al,Ga, _ Sb single crystals 213 (2000) 207 Kwon, O.-J., see Hwang, D.-H. 213 (2000) 57
Huang, X., T. Taishi, I. Yonenaga and K.
Hoshikawa, Dislocation-free B-doped Lacmann, R., see Rauls, M. 213 (2000) 116
Si crystal growth without Dash neck- Lan, C.W., M.C. Liang and C.H. Chian,
ing in Czochralski method: influence of Suppressing three-dimensional un-
B concentration steady flows in vertical zone-melting by
Hwang, D.-H., B.-Y. Lee, H.-D. Yoo and steady ampoule rotation 213 (2000) 395
O.-J. Kwon, Anomalous oxygen pre- Lan, Y.C., see Cao, Y.G. 213 (2000) 198
cipitation near the vacancy and inter- Lan, Y.C., see Li, J.Y. 213 (2000) 408
stitial boundary in CZ-Si wafers 213 (2000) Lee, B.-Y., see Hwang, D.-H. 213 (2000) 57
Hwang, N.M., see Jeon, J.-D. 213 (2000) Lee, C.O., see Barnes, M.C. 213 (2000) 83
Hwang, N.M., see Barnes, M.C. 213 (2000) Lee, J.J., Y.S. Park, C.S. Yang, H.S. Kim,
K.H. Kim, K.Y. Kang, T.W. Kang,
Imaishi, N., see Hayakawa, Y. 213 (2000) S.H. Park and J.Y. Lee, MBE growth
of wurtzite GaN on LaAlO,,(1 00) sub-
Jacob, K., see Frank, Ch. 213 (2000) strate 213 (2000) 33
Jansson, U., see Talyzin, A.V. 213 (2000) Lee, J.Y., see Lee, J.J. 213 (2000) 33
Jeon, J.-D., C.J. Park, D.-Y. Kim and N.M. Lee, W., see Kim, C. 213 (2000) 235
Hwang, Experimental confirmation of Lehoczky, S.L., see Su, C.-H. 213 (2000) 267
charged carbon clusters in the hot fila- Leitch, A.W.R., see Wagener, M.C. 213 (2000) 51
ment diamond reactor 213 (2000) Leonartz, K., see Suk, M.-J. 213 (2000) 141
Jernigan, G.G., C.L. Silvestre, M. Fatemi, Li, D., C. Huang, B. Cheng, H. Wang, Z.
M.E. Twigg and P.E. Thompson, Com- Yu, C. Zhang, J. Yu and Q. Wang,
position and morphology of SiGe Effect of low-temperature SiGe inter-
alloys grown on Si(100) using an Sb layer on the growth of relaxed SiGe 213 (2000) 308
surfactant 213 (2000) 299 Li, J.Y., see Cao, Y.G. 213 (2000) 198
Jiang, R., see Su, G. 213 (2000) 99 Li, J.Y., X.L. Chen, Z.Y. Qiao, Y.G. Cao
Jiang, S.S., see Chen, P. 213 (2000) 27 and Y.C. Lan, Formation of GaN
Jiang, W.H., see Liu, H.Y. 213 (2000) 193 nanorods by a sublimation method 213 (2000) 408
Author index
Li, Z., see Su, G. 213 (2000) 99 Pierri, E.. D. Tsamouras and E. Dalas,
Liang, J.K., see Cao, Y.G. 213 (2000) 198 Ferric phosphate precipitation in aque-
Liang, M.C., see Lan, C.W. 213 (2000) 395 ous media 213 (2000) 93
Lin, L.Y., see Fan, T.W. 213 (2000) 276 Potapenko, S.Yu., see Robey, H.F. 213 (2000) 340
Liu, H., see Hayakawa, Y. 213 (2000) 40 Potapenko, S.Yu., see Robey, H.F. 213 (2000) 355
Liu, H.Y., X.D. Wang, B. Xu, D. Ding,
W.H. Jiang, J. Wu and Z.G. Wang, Qi, X. and J.L. MacManus-Driscoll,
Effect of In-mole-fraction in InGaAs Liquid-phase epitaxial growth of
overgrowth layer on_ self-assembled REBa,Cu,0,_,; (RE=Y, Yb, Er)
InAs/GaAs quantum dots 213 (2000) 193 thick films at reduced temperatures 213 (2000) 312
Liu, Q.L., see Cao, Y.G. 213 (2000) 198 Qian, J.J., see Fan, T.W. 213 (2000) 276
Lopez, M., see Villar, C. 213 (20002)1 4 Qiao, Z.Y., see Li, J.Y. 213 (2000) 408
Loser, W., see Bitterlich, H. 213 (2000) 319
Raghavan, P.S., see Rajesh, N.P. 213 (2000) 389
MacManus-Driscoll, J.L., see Qi, X. 213 (2000) 312 Rajesh, N.P., K. Meera, K. Srinivasan, P.S.
Meera, K., see Rajesh, N.P. 213 (2000) 389 Raghavan and P. Ramasamy, Effect of
Meier, D.L., see Morelhao, S.L. 213 (2000) 288 EDTA on the metastable zone width of
Mersmann, A., see Rauls, M. 213 (2000) 116 ADP 213 (2000) 389
Mizoguchi, M., see Watanabe, K. 213 (2000) 135 Ramasamy, P., see Rajesh, N.P. 213 (2000) 389
Morelhao, S.L., J. Hartwig and D.L. Rauls, M., K. Bartosch, M. Kind, St. Kuch,
Meier, Dislocations in dendritic web R. Lacmann and A. Mersmann, The
silicon 213 (2000) 288 influence of impurities on crystalliza-
Morishima, Y., see Wang, T. 213 (2000) 188 tion kinetics - a case study on am-
Miiller, G., see Frank, Ch. 213 (2000) 10 monium sulfate 213 (2000) 116
Rechenberg, I., see Hofmann, L. 213 (2000) 229
Naoi, N., see Wang, T. 213 (2000) 188 Robey, H.F., S.Yu. Potapenko and K.D.
Naritsuka, S., see Huang, W.D. 213 (2000) 207 Summerhays, “Bending” of steps on
Narlikar, A.V., see Singh, R. 213 (2000) 70 rapidly grown KH,PQ, crystals due to
Nepijko, S.A., H. Hofmeister, H. Sack- an inhomogeneous surface super-
Kongehl and R. Schlogl, Multiply saturation field 213 (2000) 340
twinned particles beyond the icosahed- Robey, H.F. and S.Yu. Potapenko, Ex situ
ron 213 (2000) 129 microscopic observation of the lateral
Neubert, M., see Frank, Ch. 213 (2000) 10 instability of macrosteps on the surfa-
Nishinaga, T., see Huang, W.D. 213 (2000) 207 ces of rapidly grown KH,PQ, crystals 213 (2000) 355
Nishizawa, J.-i., see Oyama, Y. 213 (2000) 221 Rodriguez, M.E., O. Zelaya-Angel, J.J.
Pérez Bueno, S. Jimenez-Sandoval and
Ogura, M., see Wang, X.-L. 213 (2000) 19 L. Tirado, Influence of Te inclusions
Okano, Y., see Hayakawa, Y. 213 (2000) 40 and precipitates on the crystalline and
Oyama, Y., J.-i. Nishizawa, K. Seo and K. thermal properties of CdTe single crys-
Suto, X-ray multi-crystal diffrac- tals 213 (2000) 259
tometry analysis of heavily Te-doped Rudolph, P., see Frank, Ch. 213 (2000) 10
GaAs grown by intermittent injection
of TEGa/AsH,; in ultra high vacuum 213 (2000) 221 Sack-Kongehl, H., see Nepijko, S.A. 213 (2000) 129
Sakai, S., see Wang, T. 213 (2000) 188
Palosz, W., see Su, C.-H. 213 (2000) 267 Samanta, S.B., see Singh, R. 213 (2000) 70
Park, C.J., see Jeon, J.-D. 213 (2000) 79 Sanz-Hervas, A., see Villar, C. 213 (2000) 214
Park, S.H., see Lee, J.J. 213 (2000) 33 Schlogl, R., see Nepijko, S.A. 213 (2000) 129
Park, Y.S., see Lee, J.J. 213 (2000) 33 Schultz, L., see Bitterlich, H. 213 (2000) 319
Parsiegla, K.I. and J.L. Katz, Calcite Sekiguchi, T., see Xia, Y. 213 (2000) 328
growth inhibition by copper(II). II. Ef- Semchinova, O., see Verozubova, G.A. 213 (2000) 334
fect of solution composition 213 (2000) 368 Seo, K., see Oyama, Y. 213 (2000) 221
Perez Bueno, J.J., see Rodriguez, M.E. 213 (2000) 259 Shah, A.P., see Chandvankar, S.S. 213 (2000) 250
Petrosyan, A.M., R.P. Sukiasyan, H.A. Shaji Kumar, M.D., M. Akaishi and S.
Karapetyan, S.S. Terzyan and RS. Yamaoka, Formation of diamond from
Feigelson, Growth and investigation of supercritical H,O-CO, fluid at high
new non-linear optical crystals of LAP pressure and high temperature 213 (2000) 203
family 213 (2000) 103 Sharma, B.B., see Chandvankar, S.S. 213 (2000) 250
424 Author index
Sharma, T.K., M.R. Gokhale and B.M. ZnGeP, crystals for nonlinear optical
Arora, Long-wavelength _—_ photo- applications tN I w (2000) 334
luminescence from InGaP/GaAs het- Villar, C., A. Sanz-Hervas, M. Aguilar,
erointerfaces grown by metal organic P.O. Vaccaro, E.J. Abril, M. Lopez and
vapour-phase epitaxy 213 (2000) 241 K. Fujita, High-resolution X-ray dif-
Sharma, T.K., see Chandvankar, S.S. 213 (2000) 250 fraction study of AlAs/Alp ;Gao.;As/
Shen, B., see Chen, P. 213 (2000) 27 GaAs quantum well structures grown
Shih, H.C., see Wen, C.-Y. 213 (2000) 150 by molecular beam epitaxy on (1 1n)A
Silvestre, C.L., see Jernigan, G.G. 213 (2000) 299 GaAs 213 (20002)1 4
Singh, R., S.B. Samanta, A.V. Narlikar and Voliotis, V., see Wang, X.-L. 213 (2000) 19
G.C. Trigunayat, A combined optical,
SEM and STM study of growth spirals Wagener, M.C., J.R. Botha and A.W.R.
on the polytypic cadmium iodide crys- Leitch, Characterization of secondary
tals 213 (2000) 70 phases formed during MOVPE growth
Srinivasan, K., see Rajesh, N.P. 213 (2000) 389 of InSbBi mixed crystals 213 (2000) 51
Su, C.-H., M.A. George, W. Palosz, S. Feth Wang, H., see Li, D. 213 (2000) 308
and S.L. Lehoczky, Contactless growth Wang, M., see Chen, P. 213 (2000) 27
of ZnSe single crystals by physical va- Wang, Q., see Li, D. 213 (2000) 308
por transport 213 (2000) 267
Wang, T., Y. Morishima, N. Naoi and S.
Su, G., S., Y. He, Z. Li, R. Jiang, C. Zhu, S.
Sakai, A new method for a great reduc-
Yang, Directional solution growth of
tion of dislocation density in a GaN
cylindrical a-NiSO,:6H,0O crystal 213 (2000) 99
layer grown on a sapphire substrate 213 (2000) 188
Suk, M.-J. and K. Leonartz, Halo growth
Wang, X.D., see Liu, H.Y. 213 (2000) 193
during unidirectional solidification of
Wang, X.-L., V. Voliotis, R. Grousson and
camphor-naphthalene eutectic system 213 (2000) 141
M. Ogura, Improved heterointerface
Sukiasyan, R.P., see Petrosyan, A.M. 213 (2000) 103
quality of V-shaped AlGaAs/GaAs
Summerhays, K.D., see Robey, H.F. 213 (2000) 340
quantum wires. characterized by
Sun, L.. M. Akaishi and S. Yamaoka,
atomic force microscopy and micro-
Formation of diamond in the system of
photoluminescence 213 (2000) 19
Ag,CO, and graphite at high pressure
Wang, Z.G., see Liu, H.-Y. 213 (2000) 193
and high temperatures 213 (2000) 411
Watanabe, K. and M. Mizoguchi, Ice con-
Sun, L., see Zhang, S. 213 (2000) 415
figuration near a growing ice lens in
Suto, K., see Oyama, Y. 213 (2000) 221
a freezing porous medium consisting of
micro glass particles 213 (2000) 135
Taishi, T., see Huang, X. 213 (2000) 283
Wen, C.-Y., XJ. Guo, J.H. Huang and
Talyzin, A.V., L.-E. Tergenius and U. Jans-
H.C. Shih, Determination of the three-
son, Single- crystal growth of C7 S¢,
dimensional crystallographic misorien-
— a new phase in the C> -sulphur sys-
tation in heterostructures by selected
tem 213 (2000) 63
area diffraction (SAD) in cross-sec-
Tergenius, L.-E., see Talyzin, A.V. 213 (2000) 63
tional TEM 213 (2000) 150
Terzyan, S.S., see Petrosyan, A.M. 213 (2000) 103
Weyers, M., see Hofmann, L. 213 (2000) 229
Thompson, P.E., see Jernigan, G.G. 213 (2000) 299
Wu, F., see Hayakawa, Y. 213 (2000) 40
Tirado, L., see Rodriguez, M.E. 213 (2000) 259
Wu, J., see Liu, H.Y. 213 (2000) 193
Toénhardt, R. and G. Amberg, Dendritic
Wu, J., see Fan, T.W. 213 (2000) 276
growth of randomly oriented nuclei in
Wu, W., see Xia, Y. 213 (2000) 328
a shear flow 213 (2000) 161
Trigunayat, G.C., see Singh, R. 213 (2000) 70 Wu, X.S., see Chen, P. 213 (2000) 27
Tsamouras, D., see Pierri, E. 213 (2000) 93
Twigg, M.E., see Jernigan, G.G. 213 (2000) 299 Xia, Y., T. Sekiguchi, W. Zhang, X. Jiang,
W. Wu and T. Yao, Effects of hydrogen
Uffmann, D., see Verozubova, G.A. 213 (2000) 334 ion bombardment and boron doping
on (00 1) polycrystalline diamond films 213 (2000) 328
Vaccaro, P.O., see Villar, C. 213 (2000) 214 Xie, S.Y., see Chen, P. 213 (2000) 27
Verma, D., see Chandvankar, S.S. 213 (2000) 250 Xie, X., see Hayakawa, Y. 213 (2000) 40
Verozubova, G.A., A.I. Gribenyukov, V.V. Xu, B., see Liu, H.Y. 213 (2000) 193
Korotkova, O. Semchinova and D. Uf- Xu, T., see Cao, Y.G. 213 (2000) 198
fmann, Synthesis and growth of Xu, Y.P., see Cao, Y.G. 213 (2000) 198
Author index 425
Yamaguchi, T., see Hayakawa, Y. 213 (2000) 40 Zhang, C., see Li, D. 213 (2000) 308
Yamaoka, S., see Shaji Kumar, M.D. 213 (20002)0 3 Zhang, L., S.L. Gu, T.F. Kuech and M.P.
Yamaoka, S., see Sun, L. 213 (20004)1 1 Boleslawski, Gallium nitride growth
Yang, C.S., see Lee, J.J. 213 (2000) 33 using diethyl gallium chloride as an
Yang, M., see Kim, C. 213 (20002)3 5 alternative gallium source 213 (2000) 1
Yang, S., see Su, G. 213 (2000) 99 Zhang, R., see Chen, P. 213 (2000) 27
Yang-Bitterlich, W., see Bitterlich, H. 213 (20003)1 9 Zhang, S., Z. Cheng, S. Zhang, J. Han, L.
Yao, T., see Xia, Y. 213 (20003)2 8 Sun and H. Chen, Growth and non-
Yi, J., see Kim, C. 213 (20002)3 5 critical phase-matching third-harmonic-
Yonenaga, I., see Huang, X. 213 (20002)8 3 generation of Gd,Y,-,Ca,O(BO;),
Yoo, H.-D., see Hwang, D.-H. 213 (2000) 57 crystal 213 (20004)1 5
Yoo, T.-K., see Kim, C. 213 (20002)3 5 Zhang, S., see Zhang, S. 213 (20004)1 5
Yu, J., see Li, D. 213 (20003)0 8 Zhang, W., see Xia, Y. 213 (20003)2 8
Yu, Z., see Li, D. 213 (20003)0 8 Zheng, Y.D., see Chen, P. 213 (2000) 27
Yuan, B., see Hayakawa, Y. 213 (2000) 40 Zhong, X., see Hayakawa, Y. 213 (2000) 40
Yuan, J., see Fan, T.W. 213 (20002)7 6 Zhou, Y.G., see Chen, P. 213 (2000) 27
Zhu, C., see Su, G. 213 (2000) 99
Zeimer, U., see Hofmann, L. 213 (2000) 229 Zhu, J.M., see Chen, P. 213 (2000) 27
Zelaya-Angel, O., see Rodriguez, M.E. 213 (2000) 259
sourna.or CRYSTAL
GROWTH
ELSEVIER Journal of Crystal Growth 213 (2000) 426-427
www.elsevier.nl/locate/jcrysgro
Subject index
Apparatus - - of aluminum gallium antimonide 207
- for industrial crystallization 116 - - of zinc germanium phosphide 334
- by Czochralski method
Computer simulation - - of gadolinium yttrium calcium borate 415
- of dendritic growth 161 - - of gallium arsenide 10
- of multiply twinned particles 129 - - of silicon 57, 283
- of vertical zone melting growth 395 - by dendritic web
Convection 161, 395 - - of silicon 288
- by floating zone method
- - of Tho 4Yo.6Ni2B2C 319
Diodes, see Device characterization
Device characterization Microgravity, growth under
~ diodes 241 - of indium gallium antimonide 40
— heterojunctions 33, 241 Morphological stability
- lasers 241 — of potassium dihydrogen phosphate 355
— quantum wells 19, 214, 241
— quantum wires and dots 193 Nucleation
- of diamond 203, 328, 411
Epitaxy, see Thin film growth Numbers
Etching - Rayleigh 395
- chemical 276, 328
Eutectic growth Quantum wells, see Device characterization
- of camphor naphthalene 141 Quantum wires and dots, see Device characterization
Heat flow control
Solution growth technique
- of growing ice particles 125
— by aqueous solution
- of melt grown gallium arsenide 10
~ - of arginine phosphate monohydrate 103
- of vertical zone melting growth 395
— by electrolytic method
Heterojunctions, see Device characterization
- - of zirconium titanate 112
Hydrodynamics, see Convection
- by hydrothermal growth
- - of aluminum nitride 198
Kinetics — by low temperature method
- of growth 51, 70, 75, 93, 112, 116, 141, 368 - - of ammonium dihydrogen ortho phosphate 389
- of interface control 75 - - of carbon sulphur 63
- of nucleation 93, 116, 157, 259 - - of magnesium ammonium phosphate 381
- of spontaneous precipitation 381 - - of nickel sulphate hexahydrate 99
- by slow evaporation
Lasers, see Device characterization - - of cadmium iodide 70
Lasers, crystals for Superconductivity materials, high T,
— potassium dihydrogen phosphate 340 - - REBa,Cu,0,_, 312
- zinc germanium phosphide 334 - - Tho. 4Yo.6Ni2B2C 319
Superlattices, multilayers
Melt growth technique - of germanium silicon 308
- by Bridgman-Stockbarger method Surface structure
0022-0248/00/$s-e e front matter © 2000 Elsevier Science B.V. All rights reserved.
PII: S0022-0248(00)00477-2
Subject index
- of cadmium iodide crystals 70 - — — of gallium nitride 235
- of multiply twinned particles 129 - —- of silicon germanium 308
- of potassium dihydrogen phosphate 340, 355 - — through metalorganic chemical vapor deposition
- —- of aluminum gallium arsenide 19, 229
Thin film growth, epitaxy ~- - — of gallium arsenide 241
- by atomic layer epitaxy - — — of gallium nitride 1, 27, 188
- - of gallium arsenide 221 - — — of indium antimonide bismide 51
- by liquid phase epitaxy - — - of indium gallium phosphide 241
- - of indium thallium phosphide 250 - — theory of misorientation in heterostructures 150
- by molecular beam epitaxy
- - of aluminum arsenide 214 Vapor growth technique
- - of aluminum gallium arsenide 214 — by chemical vapor deposition
- — of gallium arsenide 193, 214 - — of diamond 79
- — of gallium nitride 33 - - of gold 83
— — of indium aluminum arsenide 193 - by evaporation and condensation
- - of indium arsenide 193 - -— of zinc selenide 267
- — of silicon germanium 299 - — of gallium nitride 408
- by vapor phase epitaxy Vapor-liquid-solid growth
- - through chemical vapor deposition - of indium bismuth 51