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sounna.or CRYSTAL ELSEVIER Journal of Crystal Growth 213 (2000) 421-425 www.elsevier.nl/locate/jcrysgro Author index Abril, E.J., see Villar, C. 213 (20002)1 4 Zhu, M. Wang, X.S. Wu, S.S. Jiang and Aguilar, M., see Villar, C. 213 (20002)1 4 D. Feng, Deposition and crystalliza- Ahn, H.S., see Barnes, M.C. 213 (2000) 83 tion of amorphous GaN buffer layers Akaishi, M., see Shaji Kumar, M.D. 213 (20002)0 3 on Si(1 1 1) substrates 213 (2000) 27 Akaishi, M., see Sun, L. 213 (20004)1 1 Chen, X.L., see Cao, Y.G. 213 (2000) 198 Amberg, G., see Tonhardt, R. 213 (20001)6 1 Chen, X.L., see Li, J.Y. 213 (2000) 408 Arora, B.M., see Sharma, T.K. 213 (20002)4 1 Chen, Z.Z., see Chen, P. 213 (2000) 27 Arora, B.M., see Chandvankar, S.S. 213 (20002)5 0 Cheng, B., see Li, D. 213 (2000) 308 Cheng, Z., see Zhang, S. 213 (2000) 415 Barnes, M.C., D.-Y. Kim, H.S. Ahn, C.O. Chian, C.H., see Lan, C.W. 213 (2000) 395 Lee and N.M. Hwang, Deposition Choi, Y., see Kim, C. 213 (2000) 235 mechanism of gold by thermal evapor- ation: approach by charged cluster Dalas, E., see Pierri, E. 213 (2000) 93 model 213 (2000) 83 Ding, D., see Liu, H.-Y. 213 (2000) 193 Bartosch, K., see Rauls, M. 213 (2000) 116 Behr, G., see Bitterlich, H. 213 (2000) 319 Fainberg, J., see Frank, Ch. 213 (2000) 10 Bitterlich, H., W. Loser, G. Behr, G. Graw, Fan, T.W., J.J. Qian, J. Wu, L.Y. Lin and J. W. Yang-Bitterlich, U. Kramer and L. Yuan, Tentative analysis of Swirl de- Schultz, Single-crystal growth of fects in silicon crystals 213 (2000) 276 Tho 4Yo.6Ni2B,C compounds by the Fatemi, M., see Jernigan, G.G. 213 (2000) 299 floating-zone method 213 (20003)1 9 Feigelson, R.S., see Petrosyan, A.M. 213 (2000) 103 Boleslawski, M.P., see Zhang, L. 213 (2000) 1 Feng, D., see Chen, P. 213 (2000) 27 Botha, J.R., see Wagener, M.C. 213 (2000) 51 Feth, S., see Su, C.-H. 213 (2000) 267 Bouropoulos, N.Ch. and P.G. Kou- Frank, Ch., K. Jacob, M. Neubert, P. tsoukos, Spontaneous precipitation of Rudolph, J. Fainberg and G. Miller, struvite from aqueous solutions 213 (2000) 381 Temperature field simulation and cor- relation to the structural quality of Cao, Y.G., X.L. Chen, Y.C. Lan, J.Y. Li, semi-insulating GaAs crystals grown Y.P. Xu, T. Xu, Q.L. Liu and J.K. Li- by the vapour pressure controlled ang, Blue emission and Raman scatter- Czochralski method (VCz) 213 (2000) 10 ing spectrum from AIN nanocrystalline Fuenzalida, V.M., Pulsed deposition and powders 213 (2000) 198 postnucleation: model for the average Cao, Y.G., see Li, J.Y. 213 (2000) 408 cluster size as a function of the number Chandrasekaran, K.S., see Chandvankar, of pulses 213 (2000) 157 S.S. 213 (2000) 250 Fujita, K., see Villar, C. 213 (2000) 214 Chandvankar, S.S., T.K. Sharma, A.P. Shah, K.S. Chandrasekaran, B.M. George, M.A., see Su, C.-H. 213 (2000) 267 Arora, A.K. Kapoor, D. Verma and Gheorghies, C., The electrolytic prepara- B.B. Sharma, Indium thallium phosph- tion and physical characterization of ide: experiments versus predictions 213 (2000) 250 ZrTiO, films 213 (2000) 112 Chen, H., see Zhang, S. 213 (2000) 415 Gokhale, M.R., see Sharma, T.K. 213 (2000) 241 Chen, P., S.Y. Xie, Z.Z. Chen, Y.G. Zhou, Graw, G., see Bitterlich, H. 213 (2000) 319 B. Shen, R. Zhang, Y.D. Zheng, J.M. Gribenyukov, A.I., see Verozubova, G.A. 213 (2000) 334 0022-0248/00/$s-e e front matter © 2000 Elsevier Science B.V. All rights reserved. PII: $S0022-0248(00)00476-0 422 Author index Grousson, R., see Wang, X.-L. 213 (2000) 19 Jiang, X., see Xia, Y. 213 (2000) 328 Gu, S.L., see Zhang, L. 213 (2000) 1 Jimenez-Sandoval, S., see Rodriguez, M.E. 213 (2000) 259 Guo, X.J., see Wen, C.-Y. 213 (2000) 150 Kang, K.Y., see Lee, J.J. 213 (2000) 33 Han, J., see Zhang, S. 213 (20004)1 5 Kang, T.W., see Lee, J.J. 213 (2000) 33 Harris, S., Surfactant-moderated growth Kapoor, A.K., see Chandvankar, S.S. 213 (2000) 250 on a vicinal surface 213 (2000) 75 Karapetyan, H.A., see Petrosyan, A.M. 213 (2000) 103 Hartwig, J., see Morelhao, S.L. 213 (2000) 288 Katz, J.L., see Parsiegla, K.I. 213 (2000) 368 Hayakawa, Y., Y. Okano, A. Hirata, N. Kim, C., M. Yang, W. Lee, J. Yi, S. Kim, Y. Imaishi, Y. Kumagiri, X. Zhong, X. Xie, Choi, T.-K. Yoo and S.T. Kim, Forma- B. Yuan, F. Wu, H. Liu, T. Yamaguchi tion and characteristics of inversion and M. Kumagawa, Experimental and domain in GaN grown by hydride va- numerical investigations on dissolution por-phase epitaxy 213 (20002)3 5 and recrystallization processes of Kim, D.-Y., see Jeon, J.-D. 213 (2000) 79 GaSb/InSb/GaSb under microgravity Kim, D.-Y., see Barnes, M.C. 213 (2000) 83 and terrestrial conditions 213 (2000) 40 Kim, H.S., see Lee, J.J. 213 (2000) 33 He, Y., see Su, G. 213 (2000) 99 Kim, K.H., see Lee, J.J. 213 (2000) 33 Hirata, A., see Hayakawa, Y. 213 (2000) 40 Kim, S., see Kim, C. 213 (20002)3 5 Hofmann, L., A. Knauer, I. Rechenberg, U. Kim, S.T., see Kim, C. 213 (20002)3 5 Zeimer and M. Weyers, Comparison of Kind, M., see Rauls, M. 213 (20001)1 6 binary and ternary growth over Knauer, A., see Hofmann, L. 213 (20002)2 9 trenches using MOVPE 213 (2000) 229 Korotkova, V.V., see Verozubova, G.A. 213 (20003)3 4 Hofmeister, H., see Nepijko, S.A. 213 (2000) 129 Koutsoukos, P.G., see Bouropoulos, N.Ch. 213 (20003)8 1 Hoshikawa, K., see Huang, X. 213 (2000) 283 Kramer, U., see Bitterlich, H. 213 (20003)1 9 Huang, C., see Li, D. 213 (2000) 308 Kuch, St., see Rauls, M. 213 (20001)1 6 Huang, J.H., see Wen, C.-Y. 213 (2000) 150 Kuech, T.F., see Zhang, L. 213 (2000) 1 Huang, W.D., S. Naritsuka and T. Kumagawa, M., see Hayakawa, Y. 213 (2000) 40 Nishinaga, Vertical Bridgman growth Kumagiri, Y., see Hayakawa, Y. 213 (2000) 40 of Al,Ga, _ Sb single crystals 213 (2000) 207 Kwon, O.-J., see Hwang, D.-H. 213 (2000) 57 Huang, X., T. Taishi, I. Yonenaga and K. Hoshikawa, Dislocation-free B-doped Lacmann, R., see Rauls, M. 213 (2000) 116 Si crystal growth without Dash neck- Lan, C.W., M.C. Liang and C.H. Chian, ing in Czochralski method: influence of Suppressing three-dimensional un- B concentration steady flows in vertical zone-melting by Hwang, D.-H., B.-Y. Lee, H.-D. Yoo and steady ampoule rotation 213 (2000) 395 O.-J. Kwon, Anomalous oxygen pre- Lan, Y.C., see Cao, Y.G. 213 (2000) 198 cipitation near the vacancy and inter- Lan, Y.C., see Li, J.Y. 213 (2000) 408 stitial boundary in CZ-Si wafers 213 (2000) Lee, B.-Y., see Hwang, D.-H. 213 (2000) 57 Hwang, N.M., see Jeon, J.-D. 213 (2000) Lee, C.O., see Barnes, M.C. 213 (2000) 83 Hwang, N.M., see Barnes, M.C. 213 (2000) Lee, J.J., Y.S. Park, C.S. Yang, H.S. Kim, K.H. Kim, K.Y. Kang, T.W. Kang, Imaishi, N., see Hayakawa, Y. 213 (2000) S.H. Park and J.Y. Lee, MBE growth of wurtzite GaN on LaAlO,,(1 00) sub- Jacob, K., see Frank, Ch. 213 (2000) strate 213 (2000) 33 Jansson, U., see Talyzin, A.V. 213 (2000) Lee, J.Y., see Lee, J.J. 213 (2000) 33 Jeon, J.-D., C.J. Park, D.-Y. Kim and N.M. Lee, W., see Kim, C. 213 (2000) 235 Hwang, Experimental confirmation of Lehoczky, S.L., see Su, C.-H. 213 (2000) 267 charged carbon clusters in the hot fila- Leitch, A.W.R., see Wagener, M.C. 213 (2000) 51 ment diamond reactor 213 (2000) Leonartz, K., see Suk, M.-J. 213 (2000) 141 Jernigan, G.G., C.L. Silvestre, M. Fatemi, Li, D., C. Huang, B. Cheng, H. Wang, Z. M.E. Twigg and P.E. Thompson, Com- Yu, C. Zhang, J. Yu and Q. Wang, position and morphology of SiGe Effect of low-temperature SiGe inter- alloys grown on Si(100) using an Sb layer on the growth of relaxed SiGe 213 (2000) 308 surfactant 213 (2000) 299 Li, J.Y., see Cao, Y.G. 213 (2000) 198 Jiang, R., see Su, G. 213 (2000) 99 Li, J.Y., X.L. Chen, Z.Y. Qiao, Y.G. Cao Jiang, S.S., see Chen, P. 213 (2000) 27 and Y.C. Lan, Formation of GaN Jiang, W.H., see Liu, H.Y. 213 (2000) 193 nanorods by a sublimation method 213 (2000) 408 Author index Li, Z., see Su, G. 213 (2000) 99 Pierri, E.. D. Tsamouras and E. Dalas, Liang, J.K., see Cao, Y.G. 213 (2000) 198 Ferric phosphate precipitation in aque- Liang, M.C., see Lan, C.W. 213 (2000) 395 ous media 213 (2000) 93 Lin, L.Y., see Fan, T.W. 213 (2000) 276 Potapenko, S.Yu., see Robey, H.F. 213 (2000) 340 Liu, H., see Hayakawa, Y. 213 (2000) 40 Potapenko, S.Yu., see Robey, H.F. 213 (2000) 355 Liu, H.Y., X.D. Wang, B. Xu, D. Ding, W.H. Jiang, J. Wu and Z.G. Wang, Qi, X. and J.L. MacManus-Driscoll, Effect of In-mole-fraction in InGaAs Liquid-phase epitaxial growth of overgrowth layer on_ self-assembled REBa,Cu,0,_,; (RE=Y, Yb, Er) InAs/GaAs quantum dots 213 (2000) 193 thick films at reduced temperatures 213 (2000) 312 Liu, Q.L., see Cao, Y.G. 213 (2000) 198 Qian, J.J., see Fan, T.W. 213 (2000) 276 Lopez, M., see Villar, C. 213 (20002)1 4 Qiao, Z.Y., see Li, J.Y. 213 (2000) 408 Loser, W., see Bitterlich, H. 213 (2000) 319 Raghavan, P.S., see Rajesh, N.P. 213 (2000) 389 MacManus-Driscoll, J.L., see Qi, X. 213 (2000) 312 Rajesh, N.P., K. Meera, K. Srinivasan, P.S. Meera, K., see Rajesh, N.P. 213 (2000) 389 Raghavan and P. Ramasamy, Effect of Meier, D.L., see Morelhao, S.L. 213 (2000) 288 EDTA on the metastable zone width of Mersmann, A., see Rauls, M. 213 (2000) 116 ADP 213 (2000) 389 Mizoguchi, M., see Watanabe, K. 213 (2000) 135 Ramasamy, P., see Rajesh, N.P. 213 (2000) 389 Morelhao, S.L., J. Hartwig and D.L. Rauls, M., K. Bartosch, M. Kind, St. Kuch, Meier, Dislocations in dendritic web R. Lacmann and A. Mersmann, The silicon 213 (2000) 288 influence of impurities on crystalliza- Morishima, Y., see Wang, T. 213 (2000) 188 tion kinetics - a case study on am- Miiller, G., see Frank, Ch. 213 (2000) 10 monium sulfate 213 (2000) 116 Rechenberg, I., see Hofmann, L. 213 (2000) 229 Naoi, N., see Wang, T. 213 (2000) 188 Robey, H.F., S.Yu. Potapenko and K.D. Naritsuka, S., see Huang, W.D. 213 (2000) 207 Summerhays, “Bending” of steps on Narlikar, A.V., see Singh, R. 213 (2000) 70 rapidly grown KH,PQ, crystals due to Nepijko, S.A., H. Hofmeister, H. Sack- an inhomogeneous surface super- Kongehl and R. Schlogl, Multiply saturation field 213 (2000) 340 twinned particles beyond the icosahed- Robey, H.F. and S.Yu. Potapenko, Ex situ ron 213 (2000) 129 microscopic observation of the lateral Neubert, M., see Frank, Ch. 213 (2000) 10 instability of macrosteps on the surfa- Nishinaga, T., see Huang, W.D. 213 (2000) 207 ces of rapidly grown KH,PQ, crystals 213 (2000) 355 Nishizawa, J.-i., see Oyama, Y. 213 (2000) 221 Rodriguez, M.E., O. Zelaya-Angel, J.J. Pérez Bueno, S. Jimenez-Sandoval and Ogura, M., see Wang, X.-L. 213 (2000) 19 L. Tirado, Influence of Te inclusions Okano, Y., see Hayakawa, Y. 213 (2000) 40 and precipitates on the crystalline and Oyama, Y., J.-i. Nishizawa, K. Seo and K. thermal properties of CdTe single crys- Suto, X-ray multi-crystal diffrac- tals 213 (2000) 259 tometry analysis of heavily Te-doped Rudolph, P., see Frank, Ch. 213 (2000) 10 GaAs grown by intermittent injection of TEGa/AsH,; in ultra high vacuum 213 (2000) 221 Sack-Kongehl, H., see Nepijko, S.A. 213 (2000) 129 Sakai, S., see Wang, T. 213 (2000) 188 Palosz, W., see Su, C.-H. 213 (2000) 267 Samanta, S.B., see Singh, R. 213 (2000) 70 Park, C.J., see Jeon, J.-D. 213 (2000) 79 Sanz-Hervas, A., see Villar, C. 213 (2000) 214 Park, S.H., see Lee, J.J. 213 (2000) 33 Schlogl, R., see Nepijko, S.A. 213 (2000) 129 Park, Y.S., see Lee, J.J. 213 (2000) 33 Schultz, L., see Bitterlich, H. 213 (2000) 319 Parsiegla, K.I. and J.L. Katz, Calcite Sekiguchi, T., see Xia, Y. 213 (2000) 328 growth inhibition by copper(II). II. Ef- Semchinova, O., see Verozubova, G.A. 213 (2000) 334 fect of solution composition 213 (2000) 368 Seo, K., see Oyama, Y. 213 (2000) 221 Perez Bueno, J.J., see Rodriguez, M.E. 213 (2000) 259 Shah, A.P., see Chandvankar, S.S. 213 (2000) 250 Petrosyan, A.M., R.P. Sukiasyan, H.A. Shaji Kumar, M.D., M. Akaishi and S. Karapetyan, S.S. Terzyan and RS. Yamaoka, Formation of diamond from Feigelson, Growth and investigation of supercritical H,O-CO, fluid at high new non-linear optical crystals of LAP pressure and high temperature 213 (2000) 203 family 213 (2000) 103 Sharma, B.B., see Chandvankar, S.S. 213 (2000) 250 424 Author index Sharma, T.K., M.R. Gokhale and B.M. ZnGeP, crystals for nonlinear optical Arora, Long-wavelength _—_ photo- applications tN I w (2000) 334 luminescence from InGaP/GaAs het- Villar, C., A. Sanz-Hervas, M. Aguilar, erointerfaces grown by metal organic P.O. Vaccaro, E.J. Abril, M. Lopez and vapour-phase epitaxy 213 (2000) 241 K. Fujita, High-resolution X-ray dif- Sharma, T.K., see Chandvankar, S.S. 213 (2000) 250 fraction study of AlAs/Alp ;Gao.;As/ Shen, B., see Chen, P. 213 (2000) 27 GaAs quantum well structures grown Shih, H.C., see Wen, C.-Y. 213 (2000) 150 by molecular beam epitaxy on (1 1n)A Silvestre, C.L., see Jernigan, G.G. 213 (2000) 299 GaAs 213 (20002)1 4 Singh, R., S.B. Samanta, A.V. Narlikar and Voliotis, V., see Wang, X.-L. 213 (2000) 19 G.C. Trigunayat, A combined optical, SEM and STM study of growth spirals Wagener, M.C., J.R. Botha and A.W.R. on the polytypic cadmium iodide crys- Leitch, Characterization of secondary tals 213 (2000) 70 phases formed during MOVPE growth Srinivasan, K., see Rajesh, N.P. 213 (2000) 389 of InSbBi mixed crystals 213 (2000) 51 Su, C.-H., M.A. George, W. Palosz, S. Feth Wang, H., see Li, D. 213 (2000) 308 and S.L. Lehoczky, Contactless growth Wang, M., see Chen, P. 213 (2000) 27 of ZnSe single crystals by physical va- Wang, Q., see Li, D. 213 (2000) 308 por transport 213 (2000) 267 Wang, T., Y. Morishima, N. Naoi and S. Su, G., S., Y. He, Z. Li, R. Jiang, C. Zhu, S. Sakai, A new method for a great reduc- Yang, Directional solution growth of tion of dislocation density in a GaN cylindrical a-NiSO,:6H,0O crystal 213 (2000) 99 layer grown on a sapphire substrate 213 (2000) 188 Suk, M.-J. and K. Leonartz, Halo growth Wang, X.D., see Liu, H.Y. 213 (2000) 193 during unidirectional solidification of Wang, X.-L., V. Voliotis, R. Grousson and camphor-naphthalene eutectic system 213 (2000) 141 M. Ogura, Improved heterointerface Sukiasyan, R.P., see Petrosyan, A.M. 213 (2000) 103 quality of V-shaped AlGaAs/GaAs Summerhays, K.D., see Robey, H.F. 213 (2000) 340 quantum wires. characterized by Sun, L.. M. Akaishi and S. Yamaoka, atomic force microscopy and micro- Formation of diamond in the system of photoluminescence 213 (2000) 19 Ag,CO, and graphite at high pressure Wang, Z.G., see Liu, H.-Y. 213 (2000) 193 and high temperatures 213 (2000) 411 Watanabe, K. and M. Mizoguchi, Ice con- Sun, L., see Zhang, S. 213 (2000) 415 figuration near a growing ice lens in Suto, K., see Oyama, Y. 213 (2000) 221 a freezing porous medium consisting of micro glass particles 213 (2000) 135 Taishi, T., see Huang, X. 213 (2000) 283 Wen, C.-Y., XJ. Guo, J.H. Huang and Talyzin, A.V., L.-E. Tergenius and U. Jans- H.C. Shih, Determination of the three- son, Single- crystal growth of C7 S¢, dimensional crystallographic misorien- — a new phase in the C> -sulphur sys- tation in heterostructures by selected tem 213 (2000) 63 area diffraction (SAD) in cross-sec- Tergenius, L.-E., see Talyzin, A.V. 213 (2000) 63 tional TEM 213 (2000) 150 Terzyan, S.S., see Petrosyan, A.M. 213 (2000) 103 Weyers, M., see Hofmann, L. 213 (2000) 229 Thompson, P.E., see Jernigan, G.G. 213 (2000) 299 Wu, F., see Hayakawa, Y. 213 (2000) 40 Tirado, L., see Rodriguez, M.E. 213 (2000) 259 Wu, J., see Liu, H.Y. 213 (2000) 193 Toénhardt, R. and G. Amberg, Dendritic Wu, J., see Fan, T.W. 213 (2000) 276 growth of randomly oriented nuclei in Wu, W., see Xia, Y. 213 (2000) 328 a shear flow 213 (2000) 161 Trigunayat, G.C., see Singh, R. 213 (2000) 70 Wu, X.S., see Chen, P. 213 (2000) 27 Tsamouras, D., see Pierri, E. 213 (2000) 93 Twigg, M.E., see Jernigan, G.G. 213 (2000) 299 Xia, Y., T. Sekiguchi, W. Zhang, X. Jiang, W. Wu and T. Yao, Effects of hydrogen Uffmann, D., see Verozubova, G.A. 213 (2000) 334 ion bombardment and boron doping on (00 1) polycrystalline diamond films 213 (2000) 328 Vaccaro, P.O., see Villar, C. 213 (2000) 214 Xie, S.Y., see Chen, P. 213 (2000) 27 Verma, D., see Chandvankar, S.S. 213 (2000) 250 Xie, X., see Hayakawa, Y. 213 (2000) 40 Verozubova, G.A., A.I. Gribenyukov, V.V. Xu, B., see Liu, H.Y. 213 (2000) 193 Korotkova, O. Semchinova and D. Uf- Xu, T., see Cao, Y.G. 213 (2000) 198 fmann, Synthesis and growth of Xu, Y.P., see Cao, Y.G. 213 (2000) 198 Author index 425 Yamaguchi, T., see Hayakawa, Y. 213 (2000) 40 Zhang, C., see Li, D. 213 (2000) 308 Yamaoka, S., see Shaji Kumar, M.D. 213 (20002)0 3 Zhang, L., S.L. Gu, T.F. Kuech and M.P. Yamaoka, S., see Sun, L. 213 (20004)1 1 Boleslawski, Gallium nitride growth Yang, C.S., see Lee, J.J. 213 (2000) 33 using diethyl gallium chloride as an Yang, M., see Kim, C. 213 (20002)3 5 alternative gallium source 213 (2000) 1 Yang, S., see Su, G. 213 (2000) 99 Zhang, R., see Chen, P. 213 (2000) 27 Yang-Bitterlich, W., see Bitterlich, H. 213 (20003)1 9 Zhang, S., Z. Cheng, S. Zhang, J. Han, L. Yao, T., see Xia, Y. 213 (20003)2 8 Sun and H. Chen, Growth and non- Yi, J., see Kim, C. 213 (20002)3 5 critical phase-matching third-harmonic- Yonenaga, I., see Huang, X. 213 (20002)8 3 generation of Gd,Y,-,Ca,O(BO;), Yoo, H.-D., see Hwang, D.-H. 213 (2000) 57 crystal 213 (20004)1 5 Yoo, T.-K., see Kim, C. 213 (20002)3 5 Zhang, S., see Zhang, S. 213 (20004)1 5 Yu, J., see Li, D. 213 (20003)0 8 Zhang, W., see Xia, Y. 213 (20003)2 8 Yu, Z., see Li, D. 213 (20003)0 8 Zheng, Y.D., see Chen, P. 213 (2000) 27 Yuan, B., see Hayakawa, Y. 213 (2000) 40 Zhong, X., see Hayakawa, Y. 213 (2000) 40 Yuan, J., see Fan, T.W. 213 (20002)7 6 Zhou, Y.G., see Chen, P. 213 (2000) 27 Zhu, C., see Su, G. 213 (2000) 99 Zeimer, U., see Hofmann, L. 213 (2000) 229 Zhu, J.M., see Chen, P. 213 (2000) 27 Zelaya-Angel, O., see Rodriguez, M.E. 213 (2000) 259 sourna.or CRYSTAL GROWTH ELSEVIER Journal of Crystal Growth 213 (2000) 426-427 www.elsevier.nl/locate/jcrysgro Subject index Apparatus - - of aluminum gallium antimonide 207 - for industrial crystallization 116 - - of zinc germanium phosphide 334 - by Czochralski method Computer simulation - - of gadolinium yttrium calcium borate 415 - of dendritic growth 161 - - of gallium arsenide 10 - of multiply twinned particles 129 - - of silicon 57, 283 - of vertical zone melting growth 395 - by dendritic web Convection 161, 395 - - of silicon 288 - by floating zone method - - of Tho 4Yo.6Ni2B2C 319 Diodes, see Device characterization Device characterization Microgravity, growth under ~ diodes 241 - of indium gallium antimonide 40 — heterojunctions 33, 241 Morphological stability - lasers 241 — of potassium dihydrogen phosphate 355 — quantum wells 19, 214, 241 — quantum wires and dots 193 Nucleation - of diamond 203, 328, 411 Epitaxy, see Thin film growth Numbers Etching - Rayleigh 395 - chemical 276, 328 Eutectic growth Quantum wells, see Device characterization - of camphor naphthalene 141 Quantum wires and dots, see Device characterization Heat flow control Solution growth technique - of growing ice particles 125 — by aqueous solution - of melt grown gallium arsenide 10 ~ - of arginine phosphate monohydrate 103 - of vertical zone melting growth 395 — by electrolytic method Heterojunctions, see Device characterization - - of zirconium titanate 112 Hydrodynamics, see Convection - by hydrothermal growth - - of aluminum nitride 198 Kinetics — by low temperature method - of growth 51, 70, 75, 93, 112, 116, 141, 368 - - of ammonium dihydrogen ortho phosphate 389 - of interface control 75 - - of carbon sulphur 63 - of nucleation 93, 116, 157, 259 - - of magnesium ammonium phosphate 381 - of spontaneous precipitation 381 - - of nickel sulphate hexahydrate 99 - by slow evaporation Lasers, see Device characterization - - of cadmium iodide 70 Lasers, crystals for Superconductivity materials, high T, — potassium dihydrogen phosphate 340 - - REBa,Cu,0,_, 312 - zinc germanium phosphide 334 - - Tho. 4Yo.6Ni2B2C 319 Superlattices, multilayers Melt growth technique - of germanium silicon 308 - by Bridgman-Stockbarger method Surface structure 0022-0248/00/$s-e e front matter © 2000 Elsevier Science B.V. All rights reserved. PII: S0022-0248(00)00477-2 Subject index - of cadmium iodide crystals 70 - — — of gallium nitride 235 - of multiply twinned particles 129 - —- of silicon germanium 308 - of potassium dihydrogen phosphate 340, 355 - — through metalorganic chemical vapor deposition - —- of aluminum gallium arsenide 19, 229 Thin film growth, epitaxy ~- - — of gallium arsenide 241 - by atomic layer epitaxy - — — of gallium nitride 1, 27, 188 - - of gallium arsenide 221 - — — of indium antimonide bismide 51 - by liquid phase epitaxy - — - of indium gallium phosphide 241 - - of indium thallium phosphide 250 - — theory of misorientation in heterostructures 150 - by molecular beam epitaxy - - of aluminum arsenide 214 Vapor growth technique - - of aluminum gallium arsenide 214 — by chemical vapor deposition - — of gallium arsenide 193, 214 - — of diamond 79 - — of gallium nitride 33 - - of gold 83 — — of indium aluminum arsenide 193 - by evaporation and condensation - - of indium arsenide 193 - -— of zinc selenide 267 - — of silicon germanium 299 - — of gallium nitride 408 - by vapor phase epitaxy Vapor-liquid-solid growth - - through chemical vapor deposition - of indium bismuth 51

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