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Journal of Crystal Growth 2000: Vol 211 Index PDF

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Preview Journal of Crystal Growth 2000: Vol 211 Index

vournaor CRYSTAL GROWTH ELSEVIER Journal of Crystal Growth 211 (2000) 509-515 www.elsevier.nl/locate/jcrysgro Author index Abdeldayem, H., see Zhu, S. (2000) 308 Bhat, I., see Schowalter, L.J. (2000) 78 Adamek, J. and P. Lejcek, Melt growth of Bi, K., see Fung, S. (2000) 174 non-isoaxial bicrystals of an Fe-3%Si Bi, K., see Zhao, Y.W. (2000) 179 alloy (2000) 461 Biefeld, R.M., J.D. Phillips and S.R. Kurtz, Adetunji, O.0., see Ndap, J.-O. (2000) 290 InAsSb/InPSb strained-layer superlattice Aizenberg, J., Patterned crystallization of cal- growth using metal-organic chemical va- cite in vivo and in vitro (2000) 143 por deposition (2000) 400 Alexander, J.1.D., see Fedoseyev, A.I. (2000) 34 Birkmann, B., M. Rasp, J. Stenzenberger and Alfano, R.R., see Bykov, A.B. (2000) 295 G. Miller, Growth of 3” and 4” gallium Andreeta, J.P., see Reyes Ardila, D. (2000) 313 arsenide crystals by the vertical gradient Aravazhi, S., see Meera, K. (2000) 220 freeze (VGF) method (2000) 157 Arunmozhi, G., see Schowalter, L.J. (2000) 78 Blank, D.H.A., G. Koster, G.A.J.H.M. Rij- Asai, K., see Ohachi, T. (2000) 405 nders, E. van Setten, P. Slycke and H. Augustine, G., V. Balakrishna and C.D. Rogalla, Epitaxial growth of oxides with Brandt, Growth and characterization of pulsed laser interval deposition (2000) 98 high-purity SiC single crystals (2000) 339 Bliss, D.F., see Ma, N. (2000) 169 Bloothoofd, W., see Mauk, M.G. (2000) 411 Babonas, G.-J., see Maltsev, V. (2000) 501 Bocelli, G., see Koporulina, E.V. (2000) 491 Bacchin, G. and T. Nishinaga, Fabrication of Borodin, V.L., see Nefyodova, I.V. (2000) 458 submicrometer structures by PSE/MBE (2000) 38 Brady, M., see Miller, St.G. (2000) 325 Backofen, R., M. Kurz and G. Miiller, Process Brandt, C.D., see Augustine, G. (2000) 339 modeling of the industrial VGF growth Brown, G.W., see Hawley, M.E. (2000) 86 process using the software package Crys- VUN + + (2000) 202 Bryant, G.G., see Ma, N. (2000) 169 Balakrishna, V., see Augustine, G. (2000) 339 Bune, A.V., S. Sen, S. Mukherjee, A. Catalina Baldochi, S.L., see Shimamura, K. (2000) 302 and D.M. Stefanescu, Effect of melt con- vection at various gravity levels and ori- Balkas, C.M., see Ma, R.-H. (2000) 352 entations on the forces acting on a large Banks, C.E., see Zhu, S. (2000) 308 Baran, M., see Shiryaev, S.V. (2000) 471 spherical particle in the vicinity of a solidi- fication interface (2000) 446 Barilo, S.N., see Shiryaev, S.V. (2000) 471 Barilo, S.N., G.L. Bychkov, L.A. Kurnevich, Burger, A., see Ndap, J.-O. (2000) 290 S.V. Shiryaev, L.A. Kurochkin, J.W. Lynn Burns, H.D., see Zhu, S. (2000) 308 and L. Vasiliu-Doloc, Seeded growth from Butaeva, T.I., see Petrosyan, A.G. (2000) 252 flux and neutron study of La, _,.Ba,MnO, Buzanov, O., see Uda, S. (2000) 318 (0.2 < x < 0.5) single crystals 211 (2000) 480 Bychkov, G.L., see Barilo, S.N. (2000) 480 Barnett, A.M., see Mauk, M.G. 211 (2000) 411 Bykov, A.B., V. Petricevic, J. Steiner, D. Yao, Basso, H.C., see Reyes Ardila, D 211 (2000) 313 L.L. Isaacs, M.R. Kokta and R.R. Alfano, Beatty, K.M. and K.A. Jackson, Monte Carlo Flux growth and characterization of modeling of silicon crystal growth 211 (2000) 13 Cr** :Ca,GeO, crystals as a new near Beling, C.D., see Fung, S. 211 (2000) 174 infrared tunable laser material (2000) 295 Beling, C.D., see Zhao, Y.W. 211 (2000) 179 Belsky, A., see Petrosyan, A.G. 211 (2000) 252 Caram, R., see Rios, C.T. (2000) 466 Bett, A.W., see Mauk, M.G. 211 (2000) 189 Caram, R., see Milenkovic, S. (2000) 485 0022-0248/00/$- see front matter © 2000 Elsevier Science B.V. All rights reserved. PII: S0022-0248(00)00302-X 510 Author index ‘arswell, W.E., M.I. Zugrav, F.C. Wessling Egarievwe, S.U., see Ndap, J.-O. (2000) 290 and G. Haulenbeek, Ground and space Emmerich, H., K. Kassner, T. Ihle and A. processing of single-crystalline organic Weiss, Dynamic simulations of interface thin films 211 (20004)2 8 morphologies in free dendritic growth 211 (2000) 43 ‘arter Jr., C.H., see Miiller, St.G 211 (2000) 325 arter, D.C., see Thomas, B.R 211 (2000) 149 Fedoseyev, A.I. and J.1.D. Alexander, Invest- atalina, A., see Bune, A.V. 211 (2000) 446 igation of vibrational control of convective “han, Y.C., see Zhang, H 211 (2000) 82 flows in Bridgman melt growth configura- BAA A DhAaRnAgDD,A J.F.. H.L. Wang and M.H. Hon, tions 211 (2000) 34 Studying of transparent conductive ZnO Fedotova, V.V., see Shiryaev, S.V. 211 (2000) 471 Al thin films by RF reactive magnetron Feng, J.M., see Ohachi, T. 211 (2000) 405 sputtering 211 (2000) 93 Feyock, B.W., see Mauk, M.G. 211 (2000) 73 Chattopadhyay, K., see Ndap, J.-O 211 (2000) 290 Fickett, B. and G. Mihalik, Economic feeder for recharging and “topping off” 211 (2000) 372 Chen, J.-C., see Huang, C.-H 211 (2000) 237 Frazier, D.O., see Zhu, S. 211 (2000) 308 Chen, Q.-S., see Ma, R.-H. 211 (20003)5 2 Fukuda, T., see Shimamura, K. 211 (2000) 302 Chen, Q.-S., see Roy, A. 211 (20003)6 5 Fung, S., Y. Zhao, N. Sun, C.D. Beling, X. Chen, X., see Fung, S. 211 (2000) 174 Chen, K. Bi, X. Wu, J. Zhang and T. Sun, Chen, X.D., see Zhao, Y.W. 211 (2000) 179 H-vacancy complex V;,H4 abundance and Cheng, S., see Zhang, H. 211 (2000) 82 its influences in n-type LEC InP 211 (20001)7 4 Chernov, A.A., see Thomas, B.R. 211 (2000) 149 Fung, S., see Zhao, Y.W. 211 (2000) 179 Chiang, M.-J. and M.-H. Hon, X-ray photo- Furukawa, Y., K. Kitamura, S. Takekawa, K. electron spectroscopy investigation of sub- Niwa, Y. Yajima, N. Tyi, I. Mnushkina, P. strate surface pretreatments for diamond Guggenheim and J.M. Martin, The cor- nucleation by microwave plasma chemical relation of MgO-doped near-stoichiomet- vapor deposition 211 (2000) 211 ric LiNbO; composition to the defect Chiang, M.J., B.H. Lung and M.H. Hon, structure 211 (2000) 230 Low-pressure deposition of diamond by electron cyclotron resonance microwave Garcia-Ruiz, J.Ma., see Villacampa, A.I. 211 (2000) 111 plasma chemical vapor deposition 211 (20002)1 6 Gatalskaya, V.I., see Shiryaev, S.V. 211 (2000) 471 Chong, T., see Li, M. 211 (20002)2 5 Ge, P., see Nakamura, T. 211 (2000) 441 Chong, T.C., see Xu, X.W. 211 (2000) 265 Gelabert, M.C., B.L. Gersten and R.E. Riman, Chong; TC, see Li, L. 211 (2000) 281 Hydrothermal synthesis of lead titanate Chvanski, P.P., see Nefyodova, I.V 211 (20004)5 8 from complexed precursor solutions 211 (2000) 497 Chvanski, P.P., see Motchany, A.1 211 (20005)0 6 George, M.A., see Zhu, S. 211 (2000) 106 Claridge, J.B., see zur Loye, H.-C. 211 (20004)5 2 Gersten, B.L., see Gelabert, M.C. 211 (2000) 497 Coelho, A.A., see Milenkovic, S. 211 (20004)8 5 Giacometti, N., see Duffar, T. 211 (2000) 434 Colayni, G. and R. Venkat, Growth dynamics Glass, R.C., see Miiller, St.G. 211 (2000) 325 of InGaAs by MBE: process simulation Glicksman, M.E., see Lupulescu, A. 211 (2000) 49 and theoretical analysis 211 (2000) 21 Goldstein, J.T., see Schunemann, P.G. 211 (2000) 242 Collins, S.R., see Mauk, M.G. 211 (2000) 411 Guggenheim, P., see Furukawa, Y. 211 (2000) 230 Cox, J.A., see Mauk, M.G. 211 (20001)8 9 Craig Carter, W., see Warren, J.A. 211 (2000) 18 Hall, R.B., see Mauk, M.G. 211 (2000) 411 Croell, A., see Yesilyurt, S. 211 (20003)6 0 Han, X., see Zhang, H. 211 (2000) 82 Hansma, P.K., see Smith, B.L. 211 (2000) 116 Harding, J.H., see Venables, J.A. 211 (2000) 27 Deeb, C.W., see Kaforey, M.L. 211 (2000) 421 Haulenbeek, G., see Carswell, W.E. 211 (2000) 428 DiNetta, L.C., see Mauk, M.G. 211 (2000) 189 Hawley, M.E., G.W. Brown, P.C. Yashar and DiNetta, L.C., see Mauk, M.G. 211 (2000) 411 C. Kwon, H-dependent magnetic domain Dong, M., see Ye, Z.-G. 211 (2000) 247 structures in Lag ¢7Sro.33MnO, thin films 211 (2000) 86 Duffar, T., P. Dusserre, F. Picca, S. Lacroix He, J. and S. Kou, Double crucible LEC and N. Giacometti, Bridgman growth growth of In-doped GaAs using inner cru- without crucible contact using the dewet- cibles with a bottom tube 211 (2000) 163 ting phenomenon 211 (2000) 434 Henshall, D., see Miiller, St.G. 211 (2000) 325 Dujardin, C., see Petrosyan, A.G. 211 (2000) 252 Hicks, R., see Zhu, S. 211 (2000) 308 Durst, F., see Selder, M. 211 (20003)3 3 Hirano, M., see Li, M. 211 (2000) 225 Dusserre, P., see Duffar, T. 211 (20004)3 4 Hirano, M., see Xu, X.W. 211 (2000) 265 Author index S11 Hirano, M., see Li, L. 211 (2000) 281 Kumagai, H., see Xu, X.W. (2000) 265 Hobgood, H.M., see Miiller, St.G 211 (2000) 325 Kumagai, H., see Li, L. (2000) 281 Hofmann, D., see Selder, M. 211 (2000) 2323 2 Kumar, J., see Senthil Kumar, M (2000) 184 Hon, M.-H., see Chiang, M.-J 211 (2000) 211 Kumaragurubaran, S., D. Krishnamurthy, C Hon, M.H., see Chang, J.F. 211 (2000) 93 Subramanian and P. Ramasamy, Growth Hon, M.H., see Chiang, M.J. 211 (2000) 216 of paratellurite crystals: effect of axial tem- Hu, C., see Huang, C.-H. 211 (2000) 237 perature gradient on the quality of the Hu, P.F., see Xu, X.W. 211 (2000) 265 crystals (2000) 276 Huang, C.-H., J.-C. Chen and C. Hu, YVO, Kurnevich, L.A., see Barilo, S.N. (2000) 480 single crystal fiber growth by the LHPG Kurochkin, L.A., see Barilo, S.N. (2000) 480 method (2000) 237 Kurtz, S.R., see Biefeld, R.M. (2000) 400 Huo, C., see Nakamura, T. (2000) 44] Kurz, M., see Backofen, R. (2000) 202 Kwon, C., see Hawley, M.E. (2000) 86 Ihle, T., see Emmerich, H. (2000) 43 Ikari, T., see Yoshino, K. (2000) 476 Lacroix, S., see Duffar, T (2000) 434 Imai, K., see Tsutsui, N. (2000) 271 Lam, Y.L., see Zhang, H. (2000) 82 Ino, Y., see Tsutsui, N. (2000) 271 Layland, R.C., see zur Loye, H.-C (2000) 452 Isaacs, L.L., see Bykov, A.B. (2000) 295 Lehoczky, S.L., see Zhu, S. (2000) 106 Ishii, M., see Tsutsui, N. (2000) 271 Lejcek, P., see Adamek, J. (2000) 461 lyi, N., see Furukawa, Y. (2000) 230 Leonyuk, L., see Maltsev, V. (2000) 501 Leonyuk, N.I., see Nefyodova, I.V. (2000) 458 Jackson, K.A., see Beatty, K.M. (2000) 13 Leonyuk, N.I., see Koporulina, E.V. (2000) 491 Jenny, J.R., see Miiller, St.G. (2000) : Leonyuk, N.I., see Motchany, A.I. (2000) 506 Levine, R.P., see Smith, B.L. (2000) 116 Kadinski, L., see Selder, M. (2000) 33: Li, L. and T. Ogawa, Clusters and their prop- Kaforey, M.L., C.W. Deeb and D.H. Mat- erties in aqueous solutions of KDP, KCl thiesen, Design of ceramic springs for use and sugar (2000) 286 in semiconductor crystal growth in micro- Li, L., see Xu, X.W. (2000) 265 gravity (2000) 421 Li, L., T.C. Chong, X.W. Xu, H. Kumagai and Kalejs, J.P., see Roy, A (2000) 365 M. Hirano, Growth of potassium lithium Kam, C.H., see Zhang, H. (2000) 82 niobate (KLN) single crystals for second Kam, C.H., see Zhang, D.H. (2000) 384 harmonic generation (SHG) application 211 (2000) Karpov, S., see Selder, M. (2000) 333 Li, M., X. Xu, D. Qiu, T. Chong, H. Kumagai Karpov, S.Yu., see Segal, A.S. (2000) 68 and M. Hirano, Influence of Ce and Co Karpov, S.Yu., see Vorob’ev, A.N (2000) 343 doping ions on photorefractive effect of Karpov, S.Yu., A.V. Kulik, LA. Zhmakin, SBN:61 crystals 211 (2000) 22 Yu.N. Makarov, E.N. Mokhov, M.G. Liu, Z., see Shimamura, K. 211 (2000) 2 Ramm, M.S. Ramm, A.D. Roenkov and Lovtsus, A.A., see Vorob’ev, A.N. 211 (2000) ; Yu.A. Vodakov, Analysis of sublimation Lung, B.H., see Chiang, M.J. 211 (2000) growth of bulk SiC crystals in tantalum Lupulescu, A. and M.E. Glicksman, Diffu- container (2000) 347 sion-limited crystal growth in silicate sys- Kassner, K., see Emmerich, H. (2000) 43 tems: similarity with high-pressure liquid- Kitamura, K., see Furukawa, Y. (2000) 230 phase sintering (2000) Klemenz, C. and H.J. Scheel, Crystal growth Lynn, J.W., see Barilo, S.N. (2000) 480 and liquid-phase epitaxy of gallium nitride (2000) 62 Lyutin, V.I., see Nefyodova, I.V. (2000) 458 Kobayashi, R., see Warren, J.A. (2000) 18 Kokta, M.R., see Bykov, A.B. (2000) 295 Ma, N., D.F. Bliss and G.G. Bryant, Develop- Koporulina, E.V., N.I. Leonyuk, A.V. Mok- ing a model for electromagnetic control of hov, O.V. Pilipenko, G. Bocelli and L. dopant segregation during liquid-encap- Righi, Flux growth of (Y,RE)AI,(BO3),4 sulated crystal growth of compound solid solutions (RE = Nd, Gd, Ho, Yb, Lu) (2000) 491 semiconductors (2000) 169 Koster, G., see Blank, D.H.A. (2000) 98 Ma, R.-H., Q.-S. Chen, H. Zhang, V. Prasad, Kou, S., see He, J. (2000) 163 C.M. Balkas and N.K. Yushin, Modeling Krishnamurthy, D., see Kumaragurubaran, S. (2000) 276 of silicon carbide crystal growth by phys- Krishnan, A., see Vorob’ev, A.N. (2000) 343 ical vapor transport method (2000) 352 Kulik, A.V., see Karpov, S.Yu. (2000) 347 Ma, X., see Ndap, J.-O. (2000) 290 Kumagai, H., see Li, M. (2000) 995 Mackintosh, B., see Roy, A. (2000) 365 512 Author index Maeda, K., see Yoshino, K (2000) 476 crystals in acid solutions under hydrother- Makarov, Yu., see Selder, M (2000) 333 mal conditions (2000) 506 Makarov, Yu.N., see Segal, A.S. (2000) Mueller, R.L., see Mauk, M.G. (2000) 189 Makarov, Yu.N., see Vorob’ev, A.N (2000) 3 Muyilatu, N., see Shimamura, K. (2000) 302 Makarov, Yu.N., see Karpov, S.Yu (2000) 3 Mukherjee, S., see Bune, A.V. (2000) 446 Malta, D., see Miiller, St.G. (2000) : Miller, G., see Birkmann, B. (2000) 157 Maltsev, V., L. Leonyuk, G.-J. Babonas, R. Miller, G., see Backofen, R. (2000) 202 Szymezak and A. Reza, Growth of super- Miller, St.G., R.C. Glass, H.M. Hobgood, conducting (M,Cu,03),,(CuO;), crystals (2000) 501 V.F. Tsvetkov, M. Brady, D. Henshall, J.R. Marin, C. and A.G. Ostrogorsky, Bulk growth Jenny, D. Malta and C.H. Carter Jr., The of quasi-binary quaternary alloys (2000) 194 status of SiC bulk growth from an indus- Marin, C. and A.G. Ostrogorsky, Growth of trial point of view (2000) : Ga-doped Gey ogSip.o2 by vertical Bridg- man with a baffle (2000) 378 Nakamura, T., T. Nishinaga, P. Ge and C. Martin, J.M., see Furukawa, Y. (2000) 230 Huo, Distribution of Te in GaSb grown by Matthiesen, D.H., see Kaforey, M.L (2000) 421 Bridgman technique under microgravity (2000) 441 Nakano, K., see Shimamura, K. (2000) 302 Mauk, M.G. and B.W. Feyock, Vapor-phase Nancollas, G.H. and W. Wu, Biomineraliz- epitaxial lateral overgrowth of ZnSe on ation mechanisms: a kinetics and inter- GaAs (2000) 73 facial energy approach (2000) Mauk, M.G., Z.A. Shellenbarger, J.A. Cox, Naritsuka, S., T. Nishinaga, M. Tachikawa O.V. Sulima, A.W. Bett, R.L. Mueller, P-E. and H. Mori, Optimization of InP micro- Sims, J.B. McNeely and L.C. DiNetta, channel epitaxy on Si substrate achieved Liquid-phase epitaxy of low-bandgap by addition of upper source (2000) 395 III-V antimonides for thermophotovoltaic Ndap, J.-O., 0.0. Adetunji, K. Chattopad- devices (2000) 189 hyay, C.I. Rablau, S.U. Egarievwe, X. Ma, Mauk, M.G., Z.A. Shellenbarger, P.E. Sims, S. Morgan and A. Burger, High-temper- W. BloothoofdJ,. B. McNeely, S.R. Collins, ature solution growth of Cr?* : CdSe for P.I. Rabinowitz, R.B. Hall, L.C. DiNetta tunable mid-IR laser application (2000) 290 and A.M. Barnett, Development of Nefyodova, L.V., V.I. Lyutin, V.L. Borodin, a modular, large-scale, high-throughput P.P. Chvanski and N.I. Leonyuk, Hy- semicontinuous-mode liquid-phase epi- drothermal growth and morphology of taxy system (2000) 411 calcite single crystals (2000) 458 McNeely, J.B., see Mauk, M.G. (2000) 189 Nishinaga, T., see Bacchin, G. (2000) 389 McNeely, J.B.. see Mauk, M.G. (2000) 411 Nishinaga, T., see Naritsuka, S. (2000) 395 Meera, K., S. Aravazhi, P.S. Raghavan and P. Nishinaga, T., see Ogura, T. (2000) 416 Ramasamy, Growth and characterisation Nishinaga, T., see Nakamura, T. (2000) 441 of L-tyrosine-doped TGS crystals (2000) 220 Niwa, K., see Furukawa, Y. (2000) 230 Mihalik, G., see Fickett, B. (2000) 372 Milenkovic, S., see Rios, C.T. (2000) 466 Ogawa, T., see Li, L. (2000) 286 Milenkovic, S., A.A. Coelho and R. Caram, Ogura, T. and T. Nishinaga, Efficiency differ- Directional solidification processing of eu- ence in Ga adatom incorporation in MBE tectic alloys in the Ni-Al-V system (2000) 485 growth of GaAs with As, and As, molecu- Mnushkina, I., see Furukawa, Y. (2000) 230 lar beams (2000) 416 Mohan, P., N. Senguttuvan, S. Moorthy Babu Ohachi, T., J.-M. Feng and K. Asai, Arsenic and P. Ramasamy, Growth of inclusion- pressure dependence of Ga desorption free InSb crystals by vertical Bridgman from MBE high index GaAs substrates 211 (2000) 405 method 211 (2000) 207 Ohmer, M.C., see Schunemann, P.G. 211 (2000) 242 Mokhov, A.V., see Koporulina, E.V. 211 (2000) 491 Ostrogorsky, A.G., see Marin, C. 211 (2000) 194 Mokhovy, E.N., see Segal, A.S. 211 (2000) 68 Ostrogorsky, A.G., see Marin, C. 211 (2000) 378 Mokhov, E.N., see Karpov, S.Yu 211 (2000) 347 Ovanesyan, K.L., see Petrosyan, A.G. 211 (2000) 252 Moorthy Babu, S., see Mohan, P. 211 (2000) 207 Morgan, S., see Ndap, J.-O. 211 (2000) 290 Paloczi, G.T., see Smith, B.L. 211 (2000) 116 Mori, H., see Naritsuka, S. 211 (2000) 395 Pedrini, C., see Petrosyan, A.G. 211 (2000) 252 Motakef, S., see Yesilyurt, S. 211 (2000) 360 Penn, B., see Zhu, S. 211 (2000) 308 Motchany, A.I., P.P. Chvanski and N.I. Leo- Peters; |P.,. see Zhu, 'S. 211 (2000) 106 nyuk, Synthesis and solubility of GaPO, Petricevic, V., see Bykov, A.B. 211 (2000) 295 Author index Petrosyan, A.G., K.L. Ovanesyan, G.O. Schunemann, P.G., S.D. Setzler, T.M. Pollak, Shirinyan, T.I. Butaeva, C. Pedrini, C. M.C. Ohmer, J.T. Goldstein and D.E. Zel- Dujardin and A. Belsky, Growth and light mon, Crystal growth and properties of Ag- yield performance of dense Ce**-doped GaTe, (2000) 242 (Lu, Y)AIO; solid solution crystals (2000) 252 Schunemann, P.G., S.D. Setzler and T.M. Pol- Phillips, J.D., see Biefeld, R.M. (2000) 400 lak, Phase-matched crystal growth of Ag- Picca, F., see Duffar, T. (2000) 434 GaSe, and AgGa, _,In,Se, (2000) 2 Pilipenko, O.V., see Koporulina, E.V. (2000) 491 Segal, A.S., S.Yu. Karpov, Yu.N. Makarov, Pollak, T.M., see Schunemann, P.G. (2000) 242 E.N. Mokhov, A.D. Roenkov, M.G. Pollak, T.M., see Schunemann, P.G (2000) 257 Ramm and Yu.A. Vodakov, On mecha- Prasad, V., see Ma, R.-H. (2000) 352 nisms of sublimation growth of AIN bulk Prasad, V., see Roy, A. (2000) 365 crystals (2000) Selder, M., L. Kadinski, Yu. Makarov. F. Qiu, D., see Li, M. (2000) 225 Durst, P. Wellmann, T. Straubinger, D Hofmann, S. Karpov and M. Ramm, Glo- bal numerical simulation of heat and mass Rabinowitz, P.I., see Mauk, M.G. (2000) 411 Rablau, C.I., see Ndap, J.-O. (2000) 290 transfer for SiC bulk crystal growth by Raghavan, P.S., see Meera, K. (2000) 220 PVT (2000) 333 Sen, S., see Bune, A.V (2000) 446 Ramasamy, P., see Senthil Kumar, M. (2000) 184 Senguttuvan, N., see Mohan, P. (2000) 207 Ramasamy, P., see Mohan, P. (2000) 207 Senguttuvan, N., see Tsutsui, N. (2000) 271 Ramasamy, P., see Meera, K. (2000) 220 Senthil Kumar, M., P. Ramasamy and J. Ramasamy, P., see Kumaragurubaran, S. (2000) 276 Kumar, Structural studies on synthesised Ramm, M., see Selder, M. (2000) 333 gallium nitride (2000) 184 Ramm, M.G., see Segal, A.S. (2000) 68 Setzler, $.D., see Schunemann, P.G. (2000) 242 Ramm, M.G., see Karpov, S.Yu. (2000) 347 Setzler, $.D., see Schunemann, P.G. (2000) 257 Ramm, M.S., see Karpov, S.Yu. (2000) 347 Shekunov, B.Yu. and P. York, Crystallization Rasp, M., see Birkmann, B. (2000) 157 processes in pharmaceutical technology Reyes Ardila, D., J.P. Andreeta and H.C. and drug delivery design (2000) 122 Basso, Preparation, microstructural and Shellenbarger, Z.A., see Mauk, M.G. (2000) 189 electrical characterization of SrVO; single Shellenbarger, Z.A., see Mauk, M.G. (2000) 411 crystal fiber (2000) 313 Shi, W., see Zhang, D.H. (2000) 384 Reza, A., see Maltsev, V. (2000) 501 Shimamura, K., S.L. Baldochi, N. Mujilatu, K. Righi, L., see Koporulina, E.V. (2000) 491 Nakano, Z. Liu, N. Sarukura and T Rijnders, G.A.J.H.M., see Blank, D.H.A. (2000) 98 Fukuda, Growth of Ce-doped LiCaAlF, Riman, R.E., see Gelabert, M.C. (2000) 497 and LiSrAlF, single crystals by the Czoch- Rios, C.T., S. Milenkovic and R. Caram, Di- ralski technique under CF, atmosphere (2000) rectional growth of AI-Nb-X eutectic Shirinyan, G.O., see Petrosyan, A.G. (2000) 2 alloys (2000) 466 Shiryaev, S.V., S.N. Barilo, S.N. Ustinovich, Roenkov, A.D., see Segal, A.S. (2000) 68 V.V. Fedotova, V.I. Gatalskaya, H. Szym- Roenkov, A.D., see Karpov, S.Yu. (2000) 347 czak, R. Szymezak and M. Baran, Electro- Rogalla, H., see Blank, D.H.A. (2000) 98 chemical growth near the Ba,_,K,BiO, Rojo, J.C., see Schowalter, L.J. (2000) 78 (x > 0.5)}-Ba,.7K,.3Bi,0, boundary and Roy, A., B. Mackintosh, J.P. Kalejs, Q.-S. the crystals properties (2000) 471 Chen, H. Zhang and V. Prasad, A numer- Shiryaev, S.V., see Barilo, S.N. (2000) 480 ical model for inductively heated cylin- Shusterman, Y., see Schowalter, L.J (2000) 78 drical silicon tube growth system 211 (2000) 365 Sims, P.E., see Mauk, M.G. (2000) 189 Sims, P.E., see Mauk, M.G. (2000) 411 Sarukura, N., see Shimamura, K. 211 (2000) 302 Slack, G.A., see Schowalter, L.J. (2000) 78 Scheel, H.J., Historical aspects of crystal Slycke, P., see Blank, D.H.A. (2000) 98 growth technology 211 (2000) 1 Smith, B.L., G.T. Paloczi, P.K. Hansma and Scheel, H.J., see Klemenz, C. 211 (2000) 62 R.P. Levine, Discerning nature’s mecha- Schowalter, L.J., J.C. Rojo, G.A. Slack, Y. nism for making complex biocomposite Shusterman, R. Wang, I. Bhat and G. crystals 211 (20001)1 6 Arunmozhi, Epitaxial growth of AIN and Smith, M.D., see zur Loye, H.-C. 211 (20004)5 2 Alo.sGao.s5N layers on aluminum nitride Stefanescu, D.M., see Bune, A.V. 211 (20004)4 6 substrates 211 (2000) 78 Steiner, J., see Bykov, A.B. 211 (20002)9 5 514 Author index Stenzenberger, J., see Birkmann, B. 211 (2000) 15 ~ Weiss, A., see Emmerich, H. 211 (2000) 43 Straubinger, T., see Selder, M. 211 (2000) 33: ys) Wellmann, P., see Selder, M. 211 (2000) 333 Su, C.-H., see Zhu, S. 211 (2000) 106 Wessling, F.C., see Carswell, W.E. 211 (2000) 428 Subramanian, C., see Kumaragurubaran, S. 211 (2000) 276 Wu, W., see Nancollas, G.H. 211 (2000) 137 Sulima, O.V., see Mauk, M.G. 211 (2000) 189 Wu, X., see Fung, S. 211 (2000) 174 Sun, N., see Fung, S. 211 (2000) 174 Wu, X., see Zhao, Y.W. 211 (2000) 179 Sun, N.F., see Zhao, Y.W. 211 (2000) 179 Sun, T., see Fung, S. 211 (2000) 174 Xu, X., see Li, M. 211 (2000) 225 Sun, T.N., see Zhao, Y.W. 211 (2000) 179 Xu, X.W., T.C. Chong, G.Y. Zhang, L. Li, P.F. Szofran, F.R., see Yesilyurt, S. 211 (2000) 360 Hu, H. Kumagai and M. Hirano, Morpho- Szymezak, H., see Shiryaev, S.V. 211 (2000) 471 logy of TSSG grown potassium lithium Szymezak, R., see Shiryaev, S.V. 211 (2000) 471 niobate (KLN) crystal in relation to its Szymezak, R., see Maltsev, V. 211 (2000) 501 structure and growth conditions 211 (2000) 265 Xu, X.W., see Li, L. 211 (2000) 281 Tachikawa, M., see Naritsuka, S. 211 (2000) 395 Takekawa, S., see Furukawa, Y. 211 (2000) 230 Yajima, Y., see Furukawa, Y. 211 (2000) 230 Thomas, B.R., A.A. Chernov, P.G. Vekilov Yamashita, Y., see Ye, Z.-G. 211 (2000) 247 and D.C. Carter, Distribution coefficients Yao, D., see Bykov, A.B. 211 (2000) 295 of protein impurities in ferritin and ly- Yashar, P.C., see Hawley, M.E. 211 (2000) 86 sozyme crystals. Self-purification in micro- Ye, Z.-G., M. Dong and Y. Yamashita, Ther- gravity 211 (2000) 149 mal stability of the Pb(Zn,,Nb>,3)03- Thompson, G.W., see Zhu, S. 211 (2000) 308 PbTiO; [PZNT91/9] and Pb(Mg, ,;Nb;,3) Tsutsui, N., Y. Ino, K. Imai, N. Senguttuvan O3-PbTiO; [PMNT68/32] single crystals 211 (2000) 247 and M. Ishii, Growth of large size LBO Yesilyurt, S., L. Vjusic, S. Motakef, F.R. Szof- (Li,B,O-) single crystals by modified ran and A. Croell, The influence of ther- Bridgman technique 211 (2000) 271 moelectromagnetic convection (TEMC) Tsvetkov, V.F., see Miiller, St.G. 211 (2000) 325 on the Bridgman growth of semi- conductors 211 (2000) 360 Uda, S. and O. Buzanov, Growth of a 3” Yokoyama, H., see Yoshino, K. 211 (2000) 476 langasite crystal with clear faceting 214 (2000) 318 Yoon, S.F., see Zhang, D.H. 211 (2000) 384 Ustinovich, S.N., see Shiryaev, S.V. 211 (2000) 471 York, P., see Shekunov, B.Yu. 211 (2000) 122 Van Setten, E. see Blank, D.H.A. 211 (2000) 98 Yoshino, K., H. Yokoyama, K. Maeda and T. Vasiliu-Doloc, L., see Barilo, S.N. 211 (2000) 480 Ikari, Crystal growth and photolumines- Vekilov, P.G., see Thomas, B.R. 211 (2000) 149 cence of CuInyGa, - Se, alloys 211 (2000) 476 Venables, J.A. and J.H. Harding, Nucleation Yushin, N.K., see Ma, R.-H. 211 (2000) 352 and growth of supported metal clusters at defect sites on oxide and halide (0 0 1) sur- Zelmon, D.E., see Schunemann, P.G. 211 (2000) 242 faces 211 (2000) Zhang, D.H., W. Shi, H.Q. Zheng, S.F. Yoon, Venkat, R., see Colayni, G. 211 (2000) tbhN —_- C.H. Kam and X.Z. Wang, Physical prop- Villacampa, A.I. and J.Ma. Garcia-Ruiz, Syn- erties of InGaAsP/InP grown by molecu- thesis of a new hydroxyapatite-silica com- lar beam epitaxy with valve phosphorous posite material 211 (2000) 111 cracker cell 211 (2000) 384 Vjusic, L., see Yesilyurt, S. 211 (2000) 360 Zhang, G.Y., see Xu, X.W. 211 (2000) 265 Vodakov, Yu.A., see Segal, A.S. 211 (2000) 68 Zhang, H., Y. Zhou, C.H. Kam, S. Cheng, X. Vodakov, Yu.A., see Karpov, S.Yu. 211 (2000) 347 Han, Y.L. Lam and Y.C. Chan, Prepara- Vorob’ev, A.N., S.Yu. Karpov, A.I. Zhmakin, tion and characterization of sol-gel de- A.A. Lovtsus, Yu.N. Makarov and A. rived potassium lithium niobate films 211 (2000) 82 Krishnan, Effect of gas-phase nucleation Zhang, H., see Ma, R.-H. 211 (2000) 352 on chemical vapor deposition of silicon Zhang, H., see Roy, A. 211 (2000) 365 carbide (2000) 343 Zhang, J., see Fung, S. 211 (2000) 174 Zhang, J., see Zhao, Y.W. 211 (2000) 179 Wang, H.L., see Chang, J.F. (2000) 93 Zhao, Y., see Fung, S. 211 (2000) 174 Wang, R., see Schowalter, L.J. (2000) 78 Zhao, Y.W., S. Fung, C.D. Beling, N.F. Sun, Wang, X.Z., see Zhang, D.H. (2000) 384 X.D. Chen, T.N. Sun, J. Zhang, K. Bi and Warren, J.A., R. Kobayashi and W. Craig X. Wu, Carrier mobility distribution in Carter, Modeling grain boundaries using annealed undoped LEC InP material 211 (2000) 179 a phase-field technique (2000) 18 Zheng, H.Q., see Zhang, D.H. 211 (2000) 384 Author index Zhmakin, A.I., see Vorob’ev, A.N. 211 (2000) 343 logy of phthalocyanine films grown in elec- Zhmakin, I.A., see Karpov, S.Yu. 211 (2000) 347 trical fields by vapor deposition 211 (2000) 308 Zhou, Y., see Zhang, H. 211 (2000) 82 Zugrav, M.I1., see Carswell, W.E. 211 (2000) 428 Zhu, S., C.-H. Su, S.L. Lehoczky, P. Peters and Zur Loye, H.-C., R.C. Layland, M.D. Smith M.A. George, Pressure effects in ZnO films and J.B. Claridge, Growth of single crys- using off-axis sputtering deposition 211 (2000) 106 tals belonging to a family of one-dimen- Zhu, S., C.E. Banks, D.O. Frazier, B. Penn, H. sional oxides: commensurate and Abdeldayem, R. Hicks, H.D. Burns and incommensurate structures 211 (2000) 452 G.W. Thompson, Structure and morpho- a vourna.or GRY STAL 2 GROWTH ELSEVIER Journal of Crystal Growth 211 (2000) 516-517 www.elsevier.nl/locate/jcrysgro Subject index Apparatus Lasers, see Device characerization - for bulk growth using ceramic springs 421 Lasers, crystals for - for gallium arsenide growth 157 - acousto optics 276 - for growth without crucible contact 434 - blue second harmonic generation of potassium lithium niobate j - for large scale liquid phase epitaxy of aluminum gallium 265, 281 arsenide 411 - scintillators 252 - for material feeding to Czochralski growth of silicon 372 - silver gallium indium selenide 257 - silver gallium selenide 257 Computer simulation; Monte Carlo method — silver gallium telluride 242 - of convection flows in melts 34 - ultraviolet all-solid-state 302 — of gallium arsenide growth 202 Lysozyme 149 f heat and mass transfer 3= 33 - of heat transfer and thermoelastic stress 325, 352, 365 - of influence of thermal gradients on convection patterns 446 Melt growth technique ~ of pulsed laser deposition 98 — by Bridgman-Stockbarger method ~ of silicon growth 13 — — of aluminum-niobium-X eutectic alloys 466 Comsinetinnal supercooling, of - — of gallium antimonide 434, 441 - para tellurite 276 - - of gallium arsenide 157, 421 Convection 1. 34. 149. 169. 276. 318. 352. 446 - - of germanium silicon 360, 378 - - of indium antimonide 201, 434 Dendritic growth 43 - — of indium antimonide cadmium telluride 194 Device sliaiaitieailialilian — - of indium gallium arsenide 194 - electronic materials 82 — — of lithium tetraborate 271 — lasers 400 - - of lutetium yttrium ortho aluminate 252 Diffusional control - by Czochralski method - of crystal growth 49 - - of cerium-doped lithium calcium aluminum fluoride 302 j ~ of growth of striation-free crystals 1 - - of cerium-doped lithium strontium aluminum fluoride 302 - of indium-doped gallium arsenide 163 - - of indium-doped gallium arsenide 163 - of patterned nucleation 143 - - of indium phosphide 174, 179 Dissolution, of - - of langasite 318 - clinopyroxene 49 - - of lithium niobate 230 - gallium orhtophosphate 506 - — of para tellurite 276 — - of strontium barium niobate 225 Electronic materials, see Device characterization - by edge-defined film-fed growth Epitaxy, see Thin film growth - - of silicon 365 Etching - by floating zone method — chemical 271 — - of iron silicon alloy 461 - by laser-heated pedestal growth Hydrodynamics, see Convection - - of strontium vanadate 313 — - of yttrium ortho vanadate 237 Kinetics — by normal freezing - of growth 49, 68, 122, 137, 333, 347, 395, 405 — -— of copper indium gallium selenide 476 - of interface control 122, 265 - by uniaxial solidification - of nucleation 122, 137, 286 - - of silver gallium indium selenide 257 0022-0248/00/$-see front matter ©) 2000 Elsevier Science B.V. All rights reserved. PII: $0022-0248(00)00303-1 Subject index — — of silver gallium selenide 257 — — of potassium lithium niobate 82 - of silver gallium telluride 242 — by templating by vertical gradient freeze - — of calcium phosphates 137 - - of gallium arsenide 202 — by zone melting Superconductivity materials, high T, — - of cuprates 501 — bulk Microgravity 34, 43, 149, 421, 428, 441. 446 — — of incommensurate cuprates 501 Morphological stability, of Surface structure, of - calcite single crystals 458 — lanthanum strontium manganette 86 — succinic dinitrile 43 — phthalocynine 308 Nucleation Thin film growth, epitaxy - of calcite 116, 143 — by chemical vapor deposition - of palladium and silver on magnesium oxide and natrium — - of diamond 211, 216 chloride 27 - - of silicon carbide 343 - of particles of organic materials 122 — by metalorganic chemical vapor deposition — of potassium chlorate 286 - -— of aluminum gallium nitride78 - of potassium dihrogen phosphate 286 - — of aluminum nitride 78 Numbers — — of indium arsenide antimonide 400 - Grashof 352 — — of indium arsenide antimonide phosphide 189 - Peclet 122, 352 - — of indium gallium arsenide antimonide 189 - Raleigh 352 — of indium phosphide antimonide 400 by molecular beam epitaxy Phase diagrams, of - of gallium arsenide 389, 405, 416 — lead magnesium niobium tantalum oxide 247 - of indium gallium arsenide phosphide 384 - lead zinc niobium tantalum oxide 247 — theory of growth dynamics of indium gallium arsenide 21 Purification, of by liquid phase epitaxy — lysozyme 149 - of gallium aluminum arsenide 41 i — of gallium nitride 62 Solid growth technique - of indium phosphide 395 - theory of grain boundary evolution 18 - of potassium tanatalate/niobate | Solution growth technique by off-axis sputtering — by electrochemical deposition — of zinc oxide 106 - - of BaKBiO;-BaKBiO, 471 by pulsed laser deposition - by flux method - of lanthanum strontium manganate 86 - - of calcium germanate 295 - of oxides 98 - of gallium nitride 62 theory of nucleation of defects 2 - of lanthanum barium manganate 480 of one-dimensional oxides 452 Vapor growth techniques — of potassium lithium niobate 265, 281 — by chemical transport - of rare earth aluminum borates 491 — of zinc selenide 73 — by gel method by evaporation and condensation - ~ of hydroxyapatite silica 111 — of aluminum nitride 68 - by hydrothermal growth — of gallium nitride 184 - - of calcite single crystals 458 — of N,N-dimethyl-p-(2,2-dicyanovinyl) alanine films 428 - - of gallium ortho phosphate 506 - - of phthalocyanine 308 — - of lead titanate 497 - - of silicon carbide 325, 333, 347, 352 — by low temperature method - by physical vapor deposition — — of calcium phosphate 137 — — of aluminum-doped zinc oxide 93 ~ — of L-tyrosine-doped triglycine sulphate 220 - by sublimation - by sol-gel method - - of silicon carbide 339

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