Journal of Crystal Growth 2000: Vol 211 Index

11 Pages·2000·2.6 MB·English

vournaor CRYSTAL
GROWTH
ELSEVIER Journal of Crystal Growth 211 (2000) 509-515
www.elsevier.nl/locate/jcrysgro
Author index
Abdeldayem, H., see Zhu, S. (2000) 308 Bhat, I., see Schowalter, L.J. (2000) 78
Adamek, J. and P. Lejcek, Melt growth of Bi, K., see Fung, S. (2000) 174
non-isoaxial bicrystals of an Fe-3%Si Bi, K., see Zhao, Y.W. (2000) 179
alloy (2000) 461 Biefeld, R.M., J.D. Phillips and S.R. Kurtz,
Adetunji, O.0., see Ndap, J.-O. (2000) 290 InAsSb/InPSb strained-layer superlattice
Aizenberg, J., Patterned crystallization of cal- growth using metal-organic chemical va-
cite in vivo and in vitro (2000) 143 por deposition (2000) 400
Alexander, J.1.D., see Fedoseyev, A.I. (2000) 34 Birkmann, B., M. Rasp, J. Stenzenberger and
Alfano, R.R., see Bykov, A.B. (2000) 295 G. Miller, Growth of 3” and 4” gallium
Andreeta, J.P., see Reyes Ardila, D. (2000) 313 arsenide crystals by the vertical gradient
Aravazhi, S., see Meera, K. (2000) 220 freeze (VGF) method (2000) 157
Arunmozhi, G., see Schowalter, L.J. (2000) 78 Blank, D.H.A., G. Koster, G.A.J.H.M. Rij-
Asai, K., see Ohachi, T. (2000) 405 nders, E. van Setten, P. Slycke and H.
Augustine, G., V. Balakrishna and C.D. Rogalla, Epitaxial growth of oxides with
Brandt, Growth and characterization of pulsed laser interval deposition (2000) 98
high-purity SiC single crystals (2000) 339 Bliss, D.F., see Ma, N. (2000) 169
Bloothoofd, W., see Mauk, M.G. (2000) 411
Babonas, G.-J., see Maltsev, V. (2000) 501 Bocelli, G., see Koporulina, E.V. (2000) 491
Bacchin, G. and T. Nishinaga, Fabrication of
Borodin, V.L., see Nefyodova, I.V. (2000) 458
submicrometer structures by PSE/MBE (2000) 38 Brady, M., see Miller, St.G. (2000) 325
Backofen, R., M. Kurz and G. Miiller, Process
Brandt, C.D., see Augustine, G. (2000) 339
modeling of the industrial VGF growth
Brown, G.W., see Hawley, M.E. (2000) 86
process using the software package Crys-
VUN + + (2000) 202 Bryant, G.G., see Ma, N. (2000) 169
Balakrishna, V., see Augustine, G. (2000) 339 Bune, A.V., S. Sen, S. Mukherjee, A. Catalina
Baldochi, S.L., see Shimamura, K. (2000) 302 and D.M. Stefanescu, Effect of melt con-
vection at various gravity levels and ori-
Balkas, C.M., see Ma, R.-H. (2000) 352
entations on the forces acting on a large
Banks, C.E., see Zhu, S. (2000) 308
Baran, M., see Shiryaev, S.V. (2000) 471 spherical particle in the vicinity of a solidi-
fication interface (2000) 446
Barilo, S.N., see Shiryaev, S.V. (2000) 471
Barilo, S.N., G.L. Bychkov, L.A. Kurnevich, Burger, A., see Ndap, J.-O. (2000) 290
S.V. Shiryaev, L.A. Kurochkin, J.W. Lynn Burns, H.D., see Zhu, S. (2000) 308
and L. Vasiliu-Doloc, Seeded growth from Butaeva, T.I., see Petrosyan, A.G. (2000) 252
flux and neutron study of La, _,.Ba,MnO, Buzanov, O., see Uda, S. (2000) 318
(0.2 < x < 0.5) single crystals 211 (2000) 480 Bychkov, G.L., see Barilo, S.N. (2000) 480
Barnett, A.M., see Mauk, M.G. 211 (2000) 411 Bykov, A.B., V. Petricevic, J. Steiner, D. Yao,
Basso, H.C., see Reyes Ardila, D 211 (2000) 313 L.L. Isaacs, M.R. Kokta and R.R. Alfano,
Beatty, K.M. and K.A. Jackson, Monte Carlo Flux growth and characterization of
modeling of silicon crystal growth 211 (2000) 13 Cr** :Ca,GeO, crystals as a new near
Beling, C.D., see Fung, S. 211 (2000) 174 infrared tunable laser material (2000) 295
Beling, C.D., see Zhao, Y.W. 211 (2000) 179
Belsky, A., see Petrosyan, A.G. 211 (2000) 252 Caram, R., see Rios, C.T. (2000) 466
Bett, A.W., see Mauk, M.G. 211 (2000) 189 Caram, R., see Milenkovic, S. (2000) 485
0022-0248/00/$- see front matter © 2000 Elsevier Science B.V. All rights reserved.
PII: S0022-0248(00)00302-X
510 Author index
‘arswell, W.E., M.I. Zugrav, F.C. Wessling Egarievwe, S.U., see Ndap, J.-O. (2000) 290
and G. Haulenbeek, Ground and space Emmerich, H., K. Kassner, T. Ihle and A.
processing of single-crystalline organic Weiss, Dynamic simulations of interface
thin films 211 (20004)2 8 morphologies in free dendritic growth 211 (2000) 43
‘arter Jr., C.H., see Miiller, St.G 211 (2000) 325
arter, D.C., see Thomas, B.R 211 (2000) 149 Fedoseyev, A.I. and J.1.D. Alexander, Invest-
atalina, A., see Bune, A.V. 211 (2000) 446 igation of vibrational control of convective
“han, Y.C., see Zhang, H 211 (2000) 82 flows in Bridgman melt growth configura-
BAA A DhAaRnAgDD,A J.F.. H.L. Wang and M.H. Hon, tions 211 (2000) 34
Studying of transparent conductive ZnO Fedotova, V.V., see Shiryaev, S.V. 211 (2000) 471
Al thin films by RF reactive magnetron Feng, J.M., see Ohachi, T. 211 (2000) 405
sputtering 211 (2000) 93 Feyock, B.W., see Mauk, M.G. 211 (2000) 73
Chattopadhyay, K., see Ndap, J.-O 211 (2000) 290 Fickett, B. and G. Mihalik, Economic feeder
for recharging and “topping off” 211 (2000) 372
Chen, J.-C., see Huang, C.-H 211 (2000) 237
Frazier, D.O., see Zhu, S. 211 (2000) 308
Chen, Q.-S., see Ma, R.-H. 211 (20003)5 2
Fukuda, T., see Shimamura, K. 211 (2000) 302
Chen, Q.-S., see Roy, A. 211 (20003)6 5
Fung, S., Y. Zhao, N. Sun, C.D. Beling, X.
Chen, X., see Fung, S. 211 (2000) 174
Chen, K. Bi, X. Wu, J. Zhang and T. Sun,
Chen, X.D., see Zhao, Y.W. 211 (2000) 179 H-vacancy complex V;,H4 abundance and
Cheng, S., see Zhang, H. 211 (2000) 82 its influences in n-type LEC InP 211 (20001)7 4
Chernov, A.A., see Thomas, B.R. 211 (2000) 149 Fung, S., see Zhao, Y.W. 211 (2000) 179
Chiang, M.-J. and M.-H. Hon, X-ray photo- Furukawa, Y., K. Kitamura, S. Takekawa, K.
electron spectroscopy investigation of sub- Niwa, Y. Yajima, N. Tyi, I. Mnushkina, P.
strate surface pretreatments for diamond Guggenheim and J.M. Martin, The cor-
nucleation by microwave plasma chemical relation of MgO-doped near-stoichiomet-
vapor deposition 211 (2000) 211 ric LiNbO; composition to the defect
Chiang, M.J., B.H. Lung and M.H. Hon, structure 211 (2000) 230
Low-pressure deposition of diamond by
electron cyclotron resonance microwave Garcia-Ruiz, J.Ma., see Villacampa, A.I. 211 (2000) 111
plasma chemical vapor deposition 211 (20002)1 6 Gatalskaya, V.I., see Shiryaev, S.V. 211 (2000) 471
Chong, T., see Li, M. 211 (20002)2 5 Ge, P., see Nakamura, T. 211 (2000) 441
Chong, T.C., see Xu, X.W. 211 (2000) 265 Gelabert, M.C., B.L. Gersten and R.E. Riman,
Chong; TC, see Li, L. 211 (2000) 281 Hydrothermal synthesis of lead titanate
Chvanski, P.P., see Nefyodova, I.V 211 (20004)5 8 from complexed precursor solutions 211 (2000) 497
Chvanski, P.P., see Motchany, A.1 211 (20005)0 6 George, M.A., see Zhu, S. 211 (2000) 106
Claridge, J.B., see zur Loye, H.-C. 211 (20004)5 2 Gersten, B.L., see Gelabert, M.C. 211 (2000) 497
Coelho, A.A., see Milenkovic, S. 211 (20004)8 5 Giacometti, N., see Duffar, T. 211 (2000) 434
Colayni, G. and R. Venkat, Growth dynamics Glass, R.C., see Miiller, St.G. 211 (2000) 325
of InGaAs by MBE: process simulation Glicksman, M.E., see Lupulescu, A. 211 (2000) 49
and theoretical analysis 211 (2000) 21 Goldstein, J.T., see Schunemann, P.G. 211 (2000) 242
Collins, S.R., see Mauk, M.G. 211 (2000) 411 Guggenheim, P., see Furukawa, Y. 211 (2000) 230
Cox, J.A., see Mauk, M.G. 211 (20001)8 9
Craig Carter, W., see Warren, J.A. 211 (2000) 18 Hall, R.B., see Mauk, M.G. 211 (2000) 411
Croell, A., see Yesilyurt, S. 211 (20003)6 0 Han, X., see Zhang, H. 211 (2000) 82
Hansma, P.K., see Smith, B.L. 211 (2000) 116
Harding, J.H., see Venables, J.A. 211 (2000) 27
Deeb, C.W., see Kaforey, M.L. 211 (2000) 421
Haulenbeek, G., see Carswell, W.E. 211 (2000) 428
DiNetta, L.C., see Mauk, M.G. 211 (2000) 189
Hawley, M.E., G.W. Brown, P.C. Yashar and
DiNetta, L.C., see Mauk, M.G. 211 (2000) 411
C. Kwon, H-dependent magnetic domain
Dong, M., see Ye, Z.-G. 211 (2000) 247 structures in Lag ¢7Sro.33MnO, thin films 211 (2000) 86
Duffar, T., P. Dusserre, F. Picca, S. Lacroix He, J. and S. Kou, Double crucible LEC
and N. Giacometti, Bridgman growth growth of In-doped GaAs using inner cru-
without crucible contact using the dewet- cibles with a bottom tube 211 (2000) 163
ting phenomenon 211 (2000) 434 Henshall, D., see Miiller, St.G. 211 (2000) 325
Dujardin, C., see Petrosyan, A.G. 211 (2000) 252 Hicks, R., see Zhu, S. 211 (2000) 308
Durst, F., see Selder, M. 211 (20003)3 3 Hirano, M., see Li, M. 211 (2000) 225
Dusserre, P., see Duffar, T. 211 (20004)3 4 Hirano, M., see Xu, X.W. 211 (2000) 265
Author index S11
Hirano, M., see Li, L. 211 (2000) 281 Kumagai, H., see Xu, X.W. (2000) 265
Hobgood, H.M., see Miiller, St.G 211 (2000) 325 Kumagai, H., see Li, L. (2000) 281
Hofmann, D., see Selder, M. 211 (2000) 2323 2 Kumar, J., see Senthil Kumar, M (2000) 184
Hon, M.-H., see Chiang, M.-J 211 (2000) 211 Kumaragurubaran, S., D. Krishnamurthy, C
Hon, M.H., see Chang, J.F. 211 (2000) 93 Subramanian and P. Ramasamy, Growth
Hon, M.H., see Chiang, M.J. 211 (2000) 216 of paratellurite crystals: effect of axial tem-
Hu, C., see Huang, C.-H. 211 (2000) 237 perature gradient on the quality of the
Hu, P.F., see Xu, X.W. 211 (2000) 265 crystals (2000) 276
Huang, C.-H., J.-C. Chen and C. Hu, YVO, Kurnevich, L.A., see Barilo, S.N. (2000) 480
single crystal fiber growth by the LHPG Kurochkin, L.A., see Barilo, S.N. (2000) 480
method (2000) 237 Kurtz, S.R., see Biefeld, R.M. (2000) 400
Huo, C., see Nakamura, T. (2000) 44] Kurz, M., see Backofen, R. (2000) 202
Kwon, C., see Hawley, M.E. (2000) 86
Ihle, T., see Emmerich, H. (2000) 43
Ikari, T., see Yoshino, K. (2000) 476 Lacroix, S., see Duffar, T (2000) 434
Imai, K., see Tsutsui, N. (2000) 271 Lam, Y.L., see Zhang, H. (2000) 82
Ino, Y., see Tsutsui, N. (2000) 271 Layland, R.C., see zur Loye, H.-C (2000) 452
Isaacs, L.L., see Bykov, A.B. (2000) 295 Lehoczky, S.L., see Zhu, S. (2000) 106
Ishii, M., see Tsutsui, N. (2000) 271 Lejcek, P., see Adamek, J. (2000) 461
lyi, N., see Furukawa, Y. (2000) 230 Leonyuk, L., see Maltsev, V. (2000) 501
Leonyuk, N.I., see Nefyodova, I.V. (2000) 458
Jackson, K.A., see Beatty, K.M. (2000) 13 Leonyuk, N.I., see Koporulina, E.V. (2000) 491
Jenny, J.R., see Miiller, St.G. (2000) : Leonyuk, N.I., see Motchany, A.I. (2000) 506
Levine, R.P., see Smith, B.L. (2000) 116
Kadinski, L., see Selder, M. (2000) 33: Li, L. and T. Ogawa, Clusters and their prop-
Kaforey, M.L., C.W. Deeb and D.H. Mat- erties in aqueous solutions of KDP, KCl
thiesen, Design of ceramic springs for use and sugar (2000) 286
in semiconductor crystal growth in micro- Li, L., see Xu, X.W. (2000) 265
gravity (2000) 421 Li, L., T.C. Chong, X.W. Xu, H. Kumagai and
Kalejs, J.P., see Roy, A (2000) 365 M. Hirano, Growth of potassium lithium
Kam, C.H., see Zhang, H. (2000) 82 niobate (KLN) single crystals for second
Kam, C.H., see Zhang, D.H. (2000) 384 harmonic generation (SHG) application 211 (2000)
Karpov, S., see Selder, M. (2000) 333 Li, M., X. Xu, D. Qiu, T. Chong, H. Kumagai
Karpov, S.Yu., see Segal, A.S. (2000) 68 and M. Hirano, Influence of Ce and Co
Karpov, S.Yu., see Vorob’ev, A.N (2000) 343 doping ions on photorefractive effect of
Karpov, S.Yu., A.V. Kulik, LA. Zhmakin, SBN:61 crystals 211 (2000) 22
Yu.N. Makarov, E.N. Mokhov, M.G. Liu, Z., see Shimamura, K. 211 (2000) 2
Ramm, M.S. Ramm, A.D. Roenkov and Lovtsus, A.A., see Vorob’ev, A.N. 211 (2000) ;
Yu.A. Vodakov, Analysis of sublimation Lung, B.H., see Chiang, M.J. 211 (2000)
growth of bulk SiC crystals in tantalum Lupulescu, A. and M.E. Glicksman, Diffu-
container (2000) 347 sion-limited crystal growth in silicate sys-
Kassner, K., see Emmerich, H. (2000) 43 tems: similarity with high-pressure liquid-
Kitamura, K., see Furukawa, Y. (2000) 230 phase sintering (2000)
Klemenz, C. and H.J. Scheel, Crystal growth Lynn, J.W., see Barilo, S.N. (2000) 480
and liquid-phase epitaxy of gallium nitride (2000) 62 Lyutin, V.I., see Nefyodova, I.V. (2000) 458
Kobayashi, R., see Warren, J.A. (2000) 18
Kokta, M.R., see Bykov, A.B. (2000) 295 Ma, N., D.F. Bliss and G.G. Bryant, Develop-
Koporulina, E.V., N.I. Leonyuk, A.V. Mok- ing a model for electromagnetic control of
hov, O.V. Pilipenko, G. Bocelli and L. dopant segregation during liquid-encap-
Righi, Flux growth of (Y,RE)AI,(BO3),4 sulated crystal growth of compound
solid solutions (RE = Nd, Gd, Ho, Yb, Lu) (2000) 491 semiconductors (2000) 169
Koster, G., see Blank, D.H.A. (2000) 98 Ma, R.-H., Q.-S. Chen, H. Zhang, V. Prasad,
Kou, S., see He, J. (2000) 163 C.M. Balkas and N.K. Yushin, Modeling
Krishnamurthy, D., see Kumaragurubaran, S. (2000) 276 of silicon carbide crystal growth by phys-
Krishnan, A., see Vorob’ev, A.N. (2000) 343 ical vapor transport method (2000) 352
Kulik, A.V., see Karpov, S.Yu. (2000) 347 Ma, X., see Ndap, J.-O. (2000) 290
Kumagai, H., see Li, M. (2000) 995 Mackintosh, B., see Roy, A. (2000) 365
512 Author index
Maeda, K., see Yoshino, K (2000) 476 crystals in acid solutions under hydrother-
Makarov, Yu., see Selder, M (2000) 333 mal conditions (2000) 506
Makarov, Yu.N., see Segal, A.S. (2000) Mueller, R.L., see Mauk, M.G. (2000) 189
Makarov, Yu.N., see Vorob’ev, A.N (2000) 3 Muyilatu, N., see Shimamura, K. (2000) 302
Makarov, Yu.N., see Karpov, S.Yu (2000) 3 Mukherjee, S., see Bune, A.V. (2000) 446
Malta, D., see Miiller, St.G. (2000) : Miller, G., see Birkmann, B. (2000) 157
Maltsev, V., L. Leonyuk, G.-J. Babonas, R. Miller, G., see Backofen, R. (2000) 202
Szymezak and A. Reza, Growth of super- Miller, St.G., R.C. Glass, H.M. Hobgood,
conducting (M,Cu,03),,(CuO;), crystals (2000) 501 V.F. Tsvetkov, M. Brady, D. Henshall, J.R.
Marin, C. and A.G. Ostrogorsky, Bulk growth Jenny, D. Malta and C.H. Carter Jr., The
of quasi-binary quaternary alloys (2000) 194 status of SiC bulk growth from an indus-
Marin, C. and A.G. Ostrogorsky, Growth of trial point of view (2000) :
Ga-doped Gey ogSip.o2 by vertical Bridg-
man with a baffle (2000) 378 Nakamura, T., T. Nishinaga, P. Ge and C.
Martin, J.M., see Furukawa, Y. (2000) 230 Huo, Distribution of Te in GaSb grown by
Matthiesen, D.H., see Kaforey, M.L (2000) 421 Bridgman technique under microgravity (2000) 441
Nakano, K., see Shimamura, K. (2000) 302
Mauk, M.G. and B.W. Feyock, Vapor-phase
Nancollas, G.H. and W. Wu, Biomineraliz-
epitaxial lateral overgrowth of ZnSe on
ation mechanisms: a kinetics and inter-
GaAs (2000) 73
facial energy approach (2000)
Mauk, M.G., Z.A. Shellenbarger, J.A. Cox,
Naritsuka, S., T. Nishinaga, M. Tachikawa
O.V. Sulima, A.W. Bett, R.L. Mueller, P-E.
and H. Mori, Optimization of InP micro-
Sims, J.B. McNeely and L.C. DiNetta,
channel epitaxy on Si substrate achieved
Liquid-phase epitaxy of low-bandgap
by addition of upper source (2000) 395
III-V antimonides for thermophotovoltaic
Ndap, J.-O., 0.0. Adetunji, K. Chattopad-
devices (2000) 189
hyay, C.I. Rablau, S.U. Egarievwe, X. Ma,
Mauk, M.G., Z.A. Shellenbarger, P.E. Sims,
S. Morgan and A. Burger, High-temper-
W. BloothoofdJ,. B. McNeely, S.R. Collins,
ature solution growth of Cr?* : CdSe for
P.I. Rabinowitz, R.B. Hall, L.C. DiNetta
tunable mid-IR laser application (2000) 290
and A.M. Barnett, Development of
Nefyodova, L.V., V.I. Lyutin, V.L. Borodin,
a modular, large-scale, high-throughput
P.P. Chvanski and N.I. Leonyuk, Hy-
semicontinuous-mode liquid-phase epi-
drothermal growth and morphology of
taxy system (2000) 411
calcite single crystals (2000) 458
McNeely, J.B., see Mauk, M.G. (2000) 189
Nishinaga, T., see Bacchin, G. (2000) 389
McNeely, J.B.. see Mauk, M.G. (2000) 411
Nishinaga, T., see Naritsuka, S. (2000) 395
Meera, K., S. Aravazhi, P.S. Raghavan and P.
Nishinaga, T., see Ogura, T. (2000) 416
Ramasamy, Growth and characterisation
Nishinaga, T., see Nakamura, T. (2000) 441
of L-tyrosine-doped TGS crystals (2000) 220
Niwa, K., see Furukawa, Y. (2000) 230
Mihalik, G., see Fickett, B. (2000) 372
Milenkovic, S., see Rios, C.T. (2000) 466
Ogawa, T., see Li, L. (2000) 286
Milenkovic, S., A.A. Coelho and R. Caram,
Ogura, T. and T. Nishinaga, Efficiency differ-
Directional solidification processing of eu-
ence in Ga adatom incorporation in MBE
tectic alloys in the Ni-Al-V system (2000) 485
growth of GaAs with As, and As, molecu-
Mnushkina, I., see Furukawa, Y. (2000) 230 lar beams (2000) 416
Mohan, P., N. Senguttuvan, S. Moorthy Babu
Ohachi, T., J.-M. Feng and K. Asai, Arsenic
and P. Ramasamy, Growth of inclusion-
pressure dependence of Ga desorption
free InSb crystals by vertical Bridgman from MBE high index GaAs substrates 211 (2000) 405
method 211 (2000) 207 Ohmer, M.C., see Schunemann, P.G. 211 (2000) 242
Mokhov, A.V., see Koporulina, E.V. 211 (2000) 491 Ostrogorsky, A.G., see Marin, C. 211 (2000) 194
Mokhovy, E.N., see Segal, A.S. 211 (2000) 68 Ostrogorsky, A.G., see Marin, C. 211 (2000) 378
Mokhov, E.N., see Karpov, S.Yu 211 (2000) 347 Ovanesyan, K.L., see Petrosyan, A.G. 211 (2000) 252
Moorthy Babu, S., see Mohan, P. 211 (2000) 207
Morgan, S., see Ndap, J.-O. 211 (2000) 290 Paloczi, G.T., see Smith, B.L. 211 (2000) 116
Mori, H., see Naritsuka, S. 211 (2000) 395 Pedrini, C., see Petrosyan, A.G. 211 (2000) 252
Motakef, S., see Yesilyurt, S. 211 (2000) 360 Penn, B., see Zhu, S. 211 (2000) 308
Motchany, A.I., P.P. Chvanski and N.I. Leo- Peters; |P.,. see Zhu, 'S. 211 (2000) 106
nyuk, Synthesis and solubility of GaPO, Petricevic, V., see Bykov, A.B. 211 (2000) 295
Author index
Petrosyan, A.G., K.L. Ovanesyan, G.O. Schunemann, P.G., S.D. Setzler, T.M. Pollak,
Shirinyan, T.I. Butaeva, C. Pedrini, C. M.C. Ohmer, J.T. Goldstein and D.E. Zel-
Dujardin and A. Belsky, Growth and light mon, Crystal growth and properties of Ag-
yield performance of dense Ce**-doped GaTe, (2000) 242
(Lu, Y)AIO; solid solution crystals (2000) 252 Schunemann, P.G., S.D. Setzler and T.M. Pol-
Phillips, J.D., see Biefeld, R.M. (2000) 400 lak, Phase-matched crystal growth of Ag-
Picca, F., see Duffar, T. (2000) 434 GaSe, and AgGa, _,In,Se, (2000) 2
Pilipenko, O.V., see Koporulina, E.V. (2000) 491 Segal, A.S., S.Yu. Karpov, Yu.N. Makarov,
Pollak, T.M., see Schunemann, P.G. (2000) 242 E.N. Mokhov, A.D. Roenkov, M.G.
Pollak, T.M., see Schunemann, P.G (2000) 257 Ramm and Yu.A. Vodakov, On mecha-
Prasad, V., see Ma, R.-H. (2000) 352 nisms of sublimation growth of AIN bulk
Prasad, V., see Roy, A. (2000) 365 crystals (2000)
Selder, M., L. Kadinski, Yu. Makarov. F.
Qiu, D., see Li, M. (2000) 225 Durst, P. Wellmann, T. Straubinger, D
Hofmann, S. Karpov and M. Ramm, Glo-
bal numerical simulation of heat and mass
Rabinowitz, P.I., see Mauk, M.G. (2000) 411
Rablau, C.I., see Ndap, J.-O. (2000) 290 transfer for SiC bulk crystal growth by
Raghavan, P.S., see Meera, K. (2000) 220 PVT (2000) 333
Sen, S., see Bune, A.V (2000) 446
Ramasamy, P., see Senthil Kumar, M. (2000) 184
Senguttuvan, N., see Mohan, P. (2000) 207
Ramasamy, P., see Mohan, P. (2000) 207
Senguttuvan, N., see Tsutsui, N. (2000) 271
Ramasamy, P., see Meera, K. (2000) 220
Senthil Kumar, M., P. Ramasamy and J.
Ramasamy, P., see Kumaragurubaran, S. (2000) 276
Kumar, Structural studies on synthesised
Ramm, M., see Selder, M. (2000) 333
gallium nitride (2000) 184
Ramm, M.G., see Segal, A.S. (2000) 68
Setzler, $.D., see Schunemann, P.G. (2000) 242
Ramm, M.G., see Karpov, S.Yu. (2000) 347
Setzler, $.D., see Schunemann, P.G. (2000) 257
Ramm, M.S., see Karpov, S.Yu. (2000) 347
Shekunov, B.Yu. and P. York, Crystallization
Rasp, M., see Birkmann, B. (2000) 157
processes in pharmaceutical technology
Reyes Ardila, D., J.P. Andreeta and H.C.
and drug delivery design (2000) 122
Basso, Preparation, microstructural and
Shellenbarger, Z.A., see Mauk, M.G. (2000) 189
electrical characterization of SrVO; single
Shellenbarger, Z.A., see Mauk, M.G. (2000) 411
crystal fiber (2000) 313
Shi, W., see Zhang, D.H. (2000) 384
Reza, A., see Maltsev, V. (2000) 501
Shimamura, K., S.L. Baldochi, N. Mujilatu, K.
Righi, L., see Koporulina, E.V. (2000) 491 Nakano, Z. Liu, N. Sarukura and T
Rijnders, G.A.J.H.M., see Blank, D.H.A. (2000) 98 Fukuda, Growth of Ce-doped LiCaAlF,
Riman, R.E., see Gelabert, M.C. (2000) 497 and LiSrAlF, single crystals by the Czoch-
Rios, C.T., S. Milenkovic and R. Caram, Di-
ralski technique under CF, atmosphere (2000)
rectional growth of AI-Nb-X eutectic Shirinyan, G.O., see Petrosyan, A.G. (2000) 2
alloys (2000) 466 Shiryaev, S.V., S.N. Barilo, S.N. Ustinovich,
Roenkov, A.D., see Segal, A.S. (2000) 68 V.V. Fedotova, V.I. Gatalskaya, H. Szym-
Roenkov, A.D., see Karpov, S.Yu. (2000) 347 czak, R. Szymezak and M. Baran, Electro-
Rogalla, H., see Blank, D.H.A. (2000) 98 chemical growth near the Ba,_,K,BiO,
Rojo, J.C., see Schowalter, L.J. (2000) 78 (x > 0.5)}-Ba,.7K,.3Bi,0, boundary and
Roy, A., B. Mackintosh, J.P. Kalejs, Q.-S. the crystals properties (2000) 471
Chen, H. Zhang and V. Prasad, A numer- Shiryaev, S.V., see Barilo, S.N. (2000) 480
ical model for inductively heated cylin- Shusterman, Y., see Schowalter, L.J (2000) 78
drical silicon tube growth system 211 (2000) 365 Sims, P.E., see Mauk, M.G. (2000) 189
Sims, P.E., see Mauk, M.G. (2000) 411
Sarukura, N., see Shimamura, K. 211 (2000) 302 Slack, G.A., see Schowalter, L.J. (2000) 78
Scheel, H.J., Historical aspects of crystal Slycke, P., see Blank, D.H.A. (2000) 98
growth technology 211 (2000) 1 Smith, B.L., G.T. Paloczi, P.K. Hansma and
Scheel, H.J., see Klemenz, C. 211 (2000) 62 R.P. Levine, Discerning nature’s mecha-
Schowalter, L.J., J.C. Rojo, G.A. Slack, Y. nism for making complex biocomposite
Shusterman, R. Wang, I. Bhat and G. crystals 211 (20001)1 6
Arunmozhi, Epitaxial growth of AIN and Smith, M.D., see zur Loye, H.-C. 211 (20004)5 2
Alo.sGao.s5N layers on aluminum nitride Stefanescu, D.M., see Bune, A.V. 211 (20004)4 6
substrates 211 (2000) 78 Steiner, J., see Bykov, A.B. 211 (20002)9 5
514 Author index
Stenzenberger, J., see Birkmann, B. 211 (2000) 15 ~ Weiss, A., see Emmerich, H. 211 (2000) 43
Straubinger, T., see Selder, M. 211 (2000) 33: ys) Wellmann, P., see Selder, M. 211 (2000) 333
Su, C.-H., see Zhu, S. 211 (2000) 106 Wessling, F.C., see Carswell, W.E. 211 (2000) 428
Subramanian, C., see Kumaragurubaran, S. 211 (2000) 276 Wu, W., see Nancollas, G.H. 211 (2000) 137
Sulima, O.V., see Mauk, M.G. 211 (2000) 189 Wu, X., see Fung, S. 211 (2000) 174
Sun, N., see Fung, S. 211 (2000) 174 Wu, X., see Zhao, Y.W. 211 (2000) 179
Sun, N.F., see Zhao, Y.W. 211 (2000) 179
Sun, T., see Fung, S. 211 (2000) 174 Xu, X., see Li, M. 211 (2000) 225
Sun, T.N., see Zhao, Y.W. 211 (2000) 179 Xu, X.W., T.C. Chong, G.Y. Zhang, L. Li, P.F.
Szofran, F.R., see Yesilyurt, S. 211 (2000) 360 Hu, H. Kumagai and M. Hirano, Morpho-
Szymezak, H., see Shiryaev, S.V. 211 (2000) 471 logy of TSSG grown potassium lithium
Szymezak, R., see Shiryaev, S.V. 211 (2000) 471 niobate (KLN) crystal in relation to its
Szymezak, R., see Maltsev, V. 211 (2000) 501 structure and growth conditions 211 (2000) 265
Xu, X.W., see Li, L. 211 (2000) 281
Tachikawa, M., see Naritsuka, S. 211 (2000) 395
Takekawa, S., see Furukawa, Y. 211 (2000) 230 Yajima, Y., see Furukawa, Y. 211 (2000) 230
Thomas, B.R., A.A. Chernov, P.G. Vekilov Yamashita, Y., see Ye, Z.-G. 211 (2000) 247
and D.C. Carter, Distribution coefficients Yao, D., see Bykov, A.B. 211 (2000) 295
of protein impurities in ferritin and ly- Yashar, P.C., see Hawley, M.E. 211 (2000) 86
sozyme crystals. Self-purification in micro-
Ye, Z.-G., M. Dong and Y. Yamashita, Ther-
gravity 211 (2000) 149 mal stability of the Pb(Zn,,Nb>,3)03-
Thompson, G.W., see Zhu, S. 211 (2000) 308 PbTiO; [PZNT91/9] and Pb(Mg, ,;Nb;,3)
Tsutsui, N., Y. Ino, K. Imai, N. Senguttuvan O3-PbTiO; [PMNT68/32] single crystals 211 (2000) 247
and M. Ishii, Growth of large size LBO Yesilyurt, S., L. Vjusic, S. Motakef, F.R. Szof-
(Li,B,O-) single crystals by modified ran and A. Croell, The influence of ther-
Bridgman technique 211 (2000) 271 moelectromagnetic convection (TEMC)
Tsvetkov, V.F., see Miiller, St.G. 211 (2000) 325 on the Bridgman growth of semi-
conductors 211 (2000) 360
Uda, S. and O. Buzanov, Growth of a 3”
Yokoyama, H., see Yoshino, K. 211 (2000) 476
langasite crystal with clear faceting 214 (2000) 318
Yoon, S.F., see Zhang, D.H. 211 (2000) 384
Ustinovich, S.N., see Shiryaev, S.V. 211 (2000) 471
York, P., see Shekunov, B.Yu. 211 (2000) 122
Van Setten, E. see Blank, D.H.A. 211 (2000) 98 Yoshino, K., H. Yokoyama, K. Maeda and T.
Vasiliu-Doloc, L., see Barilo, S.N. 211 (2000) 480 Ikari, Crystal growth and photolumines-
Vekilov, P.G., see Thomas, B.R. 211 (2000) 149 cence of CuInyGa, - Se, alloys 211 (2000) 476
Venables, J.A. and J.H. Harding, Nucleation Yushin, N.K., see Ma, R.-H. 211 (2000) 352
and growth of supported metal clusters at
defect sites on oxide and halide (0 0 1) sur- Zelmon, D.E., see Schunemann, P.G. 211 (2000) 242
faces 211 (2000) Zhang, D.H., W. Shi, H.Q. Zheng, S.F. Yoon,
Venkat, R., see Colayni, G. 211 (2000) tbhN —_- C.H. Kam and X.Z. Wang, Physical prop-
Villacampa, A.I. and J.Ma. Garcia-Ruiz, Syn- erties of InGaAsP/InP grown by molecu-
thesis of a new hydroxyapatite-silica com- lar beam epitaxy with valve phosphorous
posite material 211 (2000) 111 cracker cell 211 (2000) 384
Vjusic, L., see Yesilyurt, S. 211 (2000) 360 Zhang, G.Y., see Xu, X.W. 211 (2000) 265
Vodakov, Yu.A., see Segal, A.S. 211 (2000) 68 Zhang, H., Y. Zhou, C.H. Kam, S. Cheng, X.
Vodakov, Yu.A., see Karpov, S.Yu. 211 (2000) 347 Han, Y.L. Lam and Y.C. Chan, Prepara-
Vorob’ev, A.N., S.Yu. Karpov, A.I. Zhmakin, tion and characterization of sol-gel de-
A.A. Lovtsus, Yu.N. Makarov and A. rived potassium lithium niobate films 211 (2000) 82
Krishnan, Effect of gas-phase nucleation Zhang, H., see Ma, R.-H. 211 (2000) 352
on chemical vapor deposition of silicon Zhang, H., see Roy, A. 211 (2000) 365
carbide (2000) 343 Zhang, J., see Fung, S. 211 (2000) 174
Zhang, J., see Zhao, Y.W. 211 (2000) 179
Wang, H.L., see Chang, J.F. (2000) 93 Zhao, Y., see Fung, S. 211 (2000) 174
Wang, R., see Schowalter, L.J. (2000) 78 Zhao, Y.W., S. Fung, C.D. Beling, N.F. Sun,
Wang, X.Z., see Zhang, D.H. (2000) 384 X.D. Chen, T.N. Sun, J. Zhang, K. Bi and
Warren, J.A., R. Kobayashi and W. Craig X. Wu, Carrier mobility distribution in
Carter, Modeling grain boundaries using annealed undoped LEC InP material 211 (2000) 179
a phase-field technique (2000) 18 Zheng, H.Q., see Zhang, D.H. 211 (2000) 384
Author index
Zhmakin, A.I., see Vorob’ev, A.N. 211 (2000) 343 logy of phthalocyanine films grown in elec-
Zhmakin, I.A., see Karpov, S.Yu. 211 (2000) 347 trical fields by vapor deposition 211 (2000) 308
Zhou, Y., see Zhang, H. 211 (2000) 82 Zugrav, M.I1., see Carswell, W.E. 211 (2000) 428
Zhu, S., C.-H. Su, S.L. Lehoczky, P. Peters and Zur Loye, H.-C., R.C. Layland, M.D. Smith
M.A. George, Pressure effects in ZnO films and J.B. Claridge, Growth of single crys-
using off-axis sputtering deposition 211 (2000) 106 tals belonging to a family of one-dimen-
Zhu, S., C.E. Banks, D.O. Frazier, B. Penn, H. sional oxides: commensurate and
Abdeldayem, R. Hicks, H.D. Burns and incommensurate structures 211 (2000) 452
G.W. Thompson, Structure and morpho-
a vourna.or GRY STAL
2 GROWTH
ELSEVIER Journal of Crystal Growth 211 (2000) 516-517
www.elsevier.nl/locate/jcrysgro
Subject index
Apparatus Lasers, see Device characerization
- for bulk growth using ceramic springs 421 Lasers, crystals for
- for gallium arsenide growth 157 - acousto optics 276
- for growth without crucible contact 434 - blue second harmonic generation of potassium lithium niobate
j - for large scale liquid phase epitaxy of aluminum gallium 265, 281
arsenide 411 - scintillators 252
- for material feeding to Czochralski growth of silicon 372 - silver gallium indium selenide 257
- silver gallium selenide 257
Computer simulation; Monte Carlo method — silver gallium telluride 242
- of convection flows in melts 34 - ultraviolet all-solid-state 302
— of gallium arsenide growth 202 Lysozyme 149
f heat and mass transfer 3= 33
- of heat transfer and thermoelastic stress 325, 352, 365
- of influence of thermal gradients on convection patterns 446 Melt growth technique
~ of pulsed laser deposition 98 — by Bridgman-Stockbarger method
~ of silicon growth 13 — — of aluminum-niobium-X eutectic alloys 466
Comsinetinnal supercooling, of - — of gallium antimonide 434, 441
- para tellurite 276 - - of gallium arsenide 157, 421
Convection 1. 34. 149. 169. 276. 318. 352. 446 - - of germanium silicon 360, 378
- - of indium antimonide 201, 434
Dendritic growth 43 - — of indium antimonide cadmium telluride 194
Device sliaiaitieailialilian — - of indium gallium arsenide 194
- electronic materials 82 — — of lithium tetraborate 271
— lasers 400 - - of lutetium yttrium ortho aluminate 252
Diffusional control - by Czochralski method
- of crystal growth 49 - - of cerium-doped lithium calcium aluminum fluoride 302
j ~ of growth of striation-free crystals 1 - - of cerium-doped lithium strontium aluminum fluoride 302
- of indium-doped gallium arsenide 163 - - of indium-doped gallium arsenide 163
- of patterned nucleation 143 - - of indium phosphide 174, 179
Dissolution, of - - of langasite 318
- clinopyroxene 49 - - of lithium niobate 230
- gallium orhtophosphate 506 - — of para tellurite 276
— - of strontium barium niobate 225
Electronic materials, see Device characterization - by edge-defined film-fed growth
Epitaxy, see Thin film growth - - of silicon 365
Etching - by floating zone method
— chemical 271 — - of iron silicon alloy 461
- by laser-heated pedestal growth
Hydrodynamics, see Convection - - of strontium vanadate 313
— - of yttrium ortho vanadate 237
Kinetics — by normal freezing
- of growth 49, 68, 122, 137, 333, 347, 395, 405 — -— of copper indium gallium selenide 476
- of interface control 122, 265 - by uniaxial solidification
- of nucleation 122, 137, 286 - - of silver gallium indium selenide 257
0022-0248/00/$-see front matter ©) 2000 Elsevier Science B.V. All rights reserved.
PII: $0022-0248(00)00303-1
Subject index
— — of silver gallium selenide 257 — — of potassium lithium niobate 82
- of silver gallium telluride 242 — by templating
by vertical gradient freeze - — of calcium phosphates 137
- - of gallium arsenide 202
— by zone melting Superconductivity materials, high T,
— - of cuprates 501 — bulk
Microgravity 34, 43, 149, 421, 428, 441. 446 — — of incommensurate cuprates 501
Morphological stability, of Surface structure, of
- calcite single crystals 458 — lanthanum strontium manganette 86
— succinic dinitrile 43 — phthalocynine 308
Nucleation Thin film growth, epitaxy
- of calcite 116, 143 — by chemical vapor deposition
- of palladium and silver on magnesium oxide and natrium — - of diamond 211, 216
chloride 27 - - of silicon carbide 343
- of particles of organic materials 122 — by metalorganic chemical vapor deposition
— of potassium chlorate 286 - -— of aluminum gallium nitride78
- of potassium dihrogen phosphate 286 - — of aluminum nitride 78
Numbers — — of indium arsenide antimonide 400
- Grashof 352 — — of indium arsenide antimonide phosphide 189
- Peclet 122, 352 - — of indium gallium arsenide antimonide 189
- Raleigh 352 — of indium phosphide antimonide 400
by molecular beam epitaxy
Phase diagrams, of - of gallium arsenide 389, 405, 416
— lead magnesium niobium tantalum oxide 247 - of indium gallium arsenide phosphide 384
- lead zinc niobium tantalum oxide 247 — theory of growth dynamics of indium gallium arsenide 21
Purification, of by liquid phase epitaxy
— lysozyme 149 - of gallium aluminum arsenide 41 i
— of gallium nitride 62
Solid growth technique - of indium phosphide 395
- theory of grain boundary evolution 18 - of potassium tanatalate/niobate |
Solution growth technique by off-axis sputtering
— by electrochemical deposition — of zinc oxide 106
- - of BaKBiO;-BaKBiO, 471 by pulsed laser deposition
- by flux method - of lanthanum strontium manganate 86
- - of calcium germanate 295 - of oxides 98
- of gallium nitride 62 theory of nucleation of defects 2
- of lanthanum barium manganate 480
of one-dimensional oxides 452 Vapor growth techniques
— of potassium lithium niobate 265, 281 — by chemical transport
- of rare earth aluminum borates 491 — of zinc selenide 73
— by gel method by evaporation and condensation
- ~ of hydroxyapatite silica 111 — of aluminum nitride 68
- by hydrothermal growth — of gallium nitride 184
- - of calcite single crystals 458 — of N,N-dimethyl-p-(2,2-dicyanovinyl) alanine films 428
- - of gallium ortho phosphate 506 - - of phthalocyanine 308
— - of lead titanate 497 - - of silicon carbide 325, 333, 347, 352
— by low temperature method - by physical vapor deposition
— — of calcium phosphate 137 — — of aluminum-doped zinc oxide 93
~ — of L-tyrosine-doped triglycine sulphate 220 - by sublimation
- by sol-gel method - - of silicon carbide 339