Journal of Crystal Growth 1999: Vol 198-199 Index

21 Pages·1999·7.9 MB·English

JOURNAL OF CRYSTAL
GROWTH
ELSEVIER Journal of Crystal Growth 198/199 (1999) 1375-1391
Author index
Adachi, H., Y. Takahashi, J. Yabuzaki, Andrukhiv, M., see Andrukhiy, A. 198/199 (1999) 1162
Y. Mori and T. Sasaki, Growth of Antonov, P.I., see Krymov, V.M. 198/199 (1999) 210
high quality nonlinear optical crystal Aoyama, T., see Yap, Y.K. 198/199 (1999) 1028
4-dimethylamino-N-methyl-4-stil-
Apostol, E., see Vasile, E. 198/199 (1999) 806
bazolium tosylate (DAST) 198/199 (1999) 568
Arai, E., see Ichimura, M. 198/199 (1999) 308
Aggarwal, M.D., see Wang, W.S. 198/199 (1999) 578
Arsenov, A., see Shulyatev, D. 198/199 (1999) S11
Ahilea, T. and E. Zolotoyabko, SiO,
Assmus, W., see Gross, C. 198/199 (1999) 188
formation in oxygen-implanted sili-
Ataev, B.M., A.M. Bagamadova, V.V.
con 198/199 (1999) 414
Mamedov, A.K. Omaev and M.R.
Aitken, N.M., M.D.G. Potter, D.J. Buck-
Rabadanov, Highly conductive and
ley, J.T. Mullins, J. Carles, D.P. Halli-
transparent thin ZnO films prepared
day, K. Durose, B.K. Tanner and
in situ in a low pressure system 198/199 (1999) 1222
A.W. Brinkman, Characterisation of
Ataka, M., see Tachibana, M. 198/199 (1999) 661
cadmium telluride bulk crystals
Atroshchenko, L.W., L.P. Gal’chinetskii,
grown by a novel “multi-tube” va-
S.N. Galkin, V.D. Ryzhikov, N.L.
pour growth technique 198/199 (1999) 984
Shevtsov and V.I. Silin, Structural
Akasaki, I., Renaissance and progress in
perfection and mechanical properties
crystal growth of nitride semiconduc-
of ZnSe, _,Te, crystals grown by the
tors 198/199 (1999) 885
Bridgman technique 198/199 (1999) 292
Alatalo, H., see Sha, Z.L. 198/199 (1999) 692
Avrahami, Y., D. Shilo, N. Mainzer and
Alexandru, H., see Stanculescu, A. 198/199 (1999) 572
E. Zolotoyabko, Study of atomic dif-
Allieri, B., see Sangaletti, L. 198/199 (1999) 454 fusion in crystalline structures by
Allieri, B., see Depero, L.E. 198/199 (1999) 516 high-resolution X-ray diffraction 198/199 (1999) 264
Allieri, B., see Sangaletti, L. 198/199 (1999) 1240 Avrov, D.D., A.S. Bakin, $.1. Dorozhkin,
Amir, N., see Stolyarova, S. 198/199 (1999) 1157 V.P. Rastegaev and Yu.M. Tairov,
Amir, N., see Cohen, K. 198/199 (1999) 1174 The analysis of mass transfer in sys-
Ammerahl, U., see Revcolevschi, A. 198/199 (1999) 593 tem {-SiC-a-SiC under silicon car-
bide sublimation growth 198/199 (1999) 1011
Amon, J., P. Berwian and G. Miiller,
Computer-assisted growth of low-
EPD GaAs with 3” diameter by the
vertical gradient-freeze technique 198/199 (1999) 361 Babonas, G.-J., see Shvanskaya, L. 198/199 (1999) 600
Amon, J., J. Hartwig, W. Ludwig and G. Babonas, G.-J., see Leonyuk, L. 198/199 (1999) 619
Miiller, Analysis of types of residual Babonas, G.-J., see Maltsev, V. 198/199 (1999) 626
dislocations in the VGF growth of Bacchin, G. and T. Nishinaga, A detailed
GaAs with extremely low dislocation comparison of the degree of selectiv-
density (EPD<« 1000 cm~ *) 198/199 (1999) 367 ity, morphology and growth mecha-
Anderson, T.J., see Prasad, S.R. 198/199 (1999) 194 nisms between PSE/MBE and
Ando, Y., see Zhao, X. 198/199 (1999) 934 conventional MBE 198/199 (1999) 1130
Andrukhiv, A., G. Khlyap and M. An- Backofen, R., see Miihe, A. 198/199 (1999) 409
drukhiv, Some properties of hetero- Badens, E., S. Veesler and R. Boistelle,
structures based on new semi- Crystallization of gypsum from
conductor ZnCdHgTe 198/199 (1999) 1162 hemihydrate in presence of additives 198/199 (1999) 704
0022-0248/99/$ see front matter © 1999 Elsevier Science B.V. All rights reserved.
PII: S0022-0248(99)00096-2
1376 Author index
Back, J.T., see Kwon, K.S. 198/199 (1999) 1039 Si(1 1 1) and on Si(1 0 0) using fluor-
Bagamadova, A.M., see Ataev, B.M. 198/199 (1999) 1222 ide buffers 198/199 (1999) 1216
Baker, N., see Barber, P. 198/199 (1999) 815 Belov, A.I., see Yelisseyev, A.P. 198/199 (1999) 555
Bakin, A.S., see Avrov, D.D. 198/199 (1999) 1011 Ben-Dor, L. and J.H. Greenberg, Equi-
Bakin, A.S., SI. Dorozhkin, A.O. librium composition in II-VI tellu-
Lebedev, B.A. Kirillov, A.A. Ivanov ride MOCVD systems 198/199 (1999) 1151
and Yu.M. Tairov, Stress and mis- Ben-Yoseph, E. and R.W. Hartel, Com-
oriented area formation under large puter modeling of sugar crystalliza-
silicon carbide boule growth 198/199 (1999) 1015 tion during drying of thin sugar films 198/199 (1999) 1294
Baldochi, S.L., see Santo, A.M.E. 198/199 (1999) 466 Bennema, P., see van Veenendaal, E. 198/199 (1999) 22
Balykov, L.N., M. Kitamura, I.L. Mak- Berenschot, J.W., see Nijdam, A.J. 198/199 (1999) 430
simov and K. Nishioka, Growth and
Berman, A. and D. Charych, Oriented
dissolution kinetics of step structure 198/199 (1999) 32
nucleation of inorganic salts on poly-
Baran, M., see Barilo, S.N. 198/199 (1999) 636
meric long chain acid monolayers 198/199 (1999) 796
Barbe, M., see Triboulet, R. 198/199 (1999) 968
Bermingham, S.K., see Neumann, A.M. 198/199 (1999) 723
Barber, P., C. Hayes, N. Baker and W.
Bermingham, S.K., see Kramer, H.J.M. 198/199 (1999) 729
Rosch, Estimating crystal quality in
Bermudez, V., M.D. Serrano and E.
semiconductors using voltammetry 198/199 (1999) 815
Diéguez, Growth and characteriza-
Barilo, S.N., see Koporulina, E.V. 198/199 (1999) 460
tion of LiNbO, thin films obtained
Barilo, S.N., see Zhigunov, D.I. 198/199 (1999) 605
by liquid phase’ epitaxy on
Barilo, S.N., see Shiryaev, S.V. 198/199 (1999) 631
Li,Nb, _,O, substrates 198/199 (1999) 526
Barilo, S.N., S.V. Shiryaev, V.I. Gatal-
Berwian, P., see Amon, J. 198/199 (1999) 361
skaya, D.I. Zhigunov, A.V. Push-
Beserman, R., see Cohen, K. 198/199 (1999) 1174
karev, V.V. Fedotova, H. Szymezak,
Beserman, R., see Chack, A. 198/199 (1999) 1179
R. Szymezak, M. Baran, J.W. Lynn,
Bettinelli, M., see Sangaletti, L. 198/199 (1999) 454
N. Rosov and S. Skanthakumar, A
new method for growing Ba, _,.K,BiO, Bickermann, M., see Hofmann, D. 198/199 (1999) 1005
single crystals and investigation of Birkholz, M., see Weiss, T. 198/199 (1999) 1190
their properties 198/199 (1999) 636 Bitterlich, H., see Behr, G. 198/199 (1999) 642
Barilo, S.N., G.L. Bychkov, L.A. Kur- Bleyhl, S., see Weiss, T. 198/199 (1999) 1190
nevich, N.I. Leonuk, V.P. Mikhailov, Bloch, D.G., see Granberg, R.A. 198/199 (1999) 1287
S.V. Shiryaev, V.T. Koyava and T.V. Blumin, M., see Mogilyanski, D. 198/199 (1999) 1070
Smirnova, Controlled crystallization Bocelli, G., see Koporulina, E.V. 198/199 (1999) 460
of emerald from the fluxed melt 198/199 (1999) 716
Bockowski, M., see Prystawko, P. 198/199 (1999) 1061
Barvinschi, F., J.-L. Santailler, T. Duffar
Boeck, T., T. Teubner, K. Schmidt and
and H. Le Gal, Modelling of Verneuil
P.-M. Wilde, A method to grow sili-
process for the sapphire crystal
con crystallites on glass 198/199 (1999) 420
growth 198/199 (1999) 239
Boeck, T., see Teubner, T. 198/199 (1999) 425
Batur, C., see Seidensticker, R.G. 198/199 (1999) 988
Bohne, W., see Oertel, J. 198/199 (1999) 1205
Bazarova, G.G., see Pylneva, N.A. 198/199 (1999) 546
Boistelle, R., see Badens, E. 198/199 (1999) 704
Beccard, R., H. Protzmann, D. Schmitz,
Boistelle, R., see Garcia, E. 198/199 (1999) 1360
G. Strauch, M. Heuken and H. Juer-
Boiton, P., see Duffar, T. 198/199 (1999) 374
gensen, A novel reactor concept for
multiwafer growth of III-V semicon- Bondar, V., see Burachas, S. 198/199 (1999) 881
ductors 198/199 (1999) 1049 Bontempi, E., see Depero, L.E. 198/199 (1999) 516
Beckmann, W., Nucleation phenomena Bontempi, E., see Sangaletti, L. 198/199 (1999) 1240
during the crystallisation and pre- Borodenko, Yu., see Burachas, S. 198/199 (1999) 881
cipitation of Abecarnil 198/199 (1999) 1307 Borodin, A.V. V.A. Borodin, V.V.
Behr, G., W. Léser, G. Graw, H. Bitter- Sidorov and LS. Pet’kov, Influence of
lich, J. Freudenberger, J. Fink and L. growth process parameters on weight
Schultz, Growth of RENi,B,C single sensor readings in the Stepanov
crystals by RF-zone melting 198/199 (1999) 642 (EFG) technique 198/199 (1999) 215
Bejarano, J.M.Z., see Mota, M.A. 198/199 (1999) 850 Borodin, A.V., V.A. Borodin and A.V.
Belenchuk, A., O. Shapoval, V. Kantser, Zhdanov, Simulation of the pressure
A. Fedorov, P. Schunk, Th. Schimmel distribution in the melt for sapphire
and Z. Dashevsky, Growth of (1 1 1)- ribbon growth by the Stepanov
oriented PbTe thin films on vicinal (EFG) technique 198/199 (1999) 220
Author index 1377
Borodin, V.A., V.V. Sidorov, S.N. Ros- Chack, A., see Cohen, K. 198/199 (1999) 1174
solenko, T.A. Steriopolo and T.N. Chack, A., K. Cohen, S. Stolyarova, Y.
Yalovets, Development of the Nemirovsky, R. Beserman and R.
Stepanov (edge-defined _film-fed Weil, Dielectric and pyroelectric
growth) method: variable shaping properties of ordered CdZnTe layers
technique and local dynamic shaping grown by MOCVD 198/199 (1999) 1179
technique 198/199 (1999) 201 Chang, L.-B., H.-T. Wang, Y.-C. Cheng,
Borodin, V.A., see Borodin, A.V. 198/199 (1999) 215 T.-W. Shong and E.-K. Lin, Praseo-
Borodin, V.A., see Borodin, A.V. 198/199 (1999) 220 dymium added GaAs liquid phase
Borusik, O., see Ivlev, G. 198/199 (1999) 1066 epitaxy and its Schottky diode ap-
Bottcher, K., P. Rudolph, M. Neubert, plication 198/199 (1999) 1092
M. Kurz, A. Pusztai and G. Miller, Charach, Ch. and P.C. Fife, Phase field
Global temperature field simulation models of solidification in binary
of the vapour pressure controlled alloys: capillarity and solute trapping
Czochralski (VCZ) growth of 3”—4” effects 198/199 (1999) 1267
gallium arsenide crystals 198/199 (1999) 349 Charych, D., see Berman, A. 198/199 (1999) 796
Brandon, S., see Rotstein, H.G. 198/199 (1999) 1256 Chatterjee, A., see Chen, Q:S. 198/199 (1999) 710
Braslavsky, I., see Notcovich, A.G. 198/199 (1999) 10 Chattopadhyay, K., see Burger, A. 198/199 (1999) 872
Braslavsky, I. and S.G. Lipson, The Chayen, N.E., Recent advances in meth-
double-pyramid structure of de- odology for the crystallization of bio-
ndritic ice growing from supercooled logical macromolecules 198/199 (1999) 649
water 198/199 (1999) 56 Chen, H., see Burger, A. 198/199 (1999) 872
Briggs, G.A.D., see Goldfarb, I. 198/199 (1999) 1032 Chen, J.-C., L.-T. Liu and C.-C. Young,
Brinkman, A.W., see Aitken, N.M. 198/199 (1999) 984 A study of the growth mechanism of
Bronfenbrener, L. and E. Korin, Two- bismuth silicon oxide during LHPG
phase zone formation conditions un- method 198/199 (1999) 476
der freezing of porous media 198/199 (1999) 89 Chen, J.-C., see Lai, Y.-J. 198/199 (1999) 531
Brown, I., see Shima, R. 198/199 (1999) 957 Chen, Q.S., V. Prasad, A. Chatterjee and
Bruinsma, O.S.L., see Wubbolts, F.E. 198/199 (1999) 767 J. Larkin, A porous media-based
Buckley, D.J., see Aitken, N.M. 198/199 (1999) 984 transport model for hydrothermal
Burachas, S., see Nagornaya, L. 198/199 (1999) 877 growth 198/199 (1999) 710
Burachas, S., V. Bondar, Yu. Borodenko, Chen, R., see Burger, A. 198/199 (1999) 872
K. Katrunov, V. Martinov, L. Nagor- Cheng, Y.-C., see Chang, L.-B. 198/199 (1999) 1092
naya, V. Ryzhikov, G. Tamulaitis, H. Chepurov, A.L, LI. Fedorov, V.M. Sonin
Gutbrod and V. Manko, Lead tung- and A.A. Tomilenko, Experimental
state PbWQ, crystals for high energy study of intake of gases by diamonds
physics 198/199 (1999) 881 during crystallization 198/199 (1999) 963
Burger, A., K. Chattopadhyay, H. Chen, Chiba, K.-i., see Obara, K. 198/199 (1999) 894
J.O. Ndap, X. Ma, S. Trivedi, S.W. Choi, J., see Wang, W.S. 198/199 (1999) 578
Kutcher, R. Chen and R.D. Rose- Chong, T.C., see Xu, X.W. 198/199 (1999) 536
meier, Crystal growth, fabrication Chong, T.C., see Shi, L.P. 198/199 (1999) 551
and evaluation of cadmium manga- Chun, C.-H., see Lee, Y.-S. 198/199 (1999) 147
nese telluride gamma ray detectors 198/199 (1999) 872 Coelho, A.A., see Mota, M.A. 198/199 (1999) 850
Bychkov, G.L., see Koporulina, E.V. 198/199 (1999) 460 Cohen, K., S. Stolyarova, N. Amir, A.
Bychkov, G.L., see Barilo, S.N. 198/199 (1999) 716 Chack, R. Beserman, R. Weil and Y.
Nemirovsky, MOCVD growth of or-
Camel, D., see Leroux, S. 198/199 (1999) 911 dered Cd,,; _.,Zn,Te epilayers 198/199 (1999) 1174
Caram, R. and S. Milenkovic, Micro- Cohen, K., see Chack, A. 198/199 (1999) 1179
structure of Ni-—Ni,Si eutectic alloy Conti, M., Oscillatory instabilities and
produced by directional solidifi- banded structures in rapidly solidi-
cation 198/199 (1999) 844 fied alloys 198/199 (1999) 1251
Caram, R., see Mota, M.A. 198/199 (1999) 850 Coriell, S.R., see Seidensticker, R.G. 198/199 (1999) 988
Carles, J., see Aitken, N.M. 198/199 (1999) 984 Coriell, S.R., see Singh, N.B. 198/199 (1999) 995
Castano, J.L., see Plaza, J.L. 198/199 (1999) 379 Cristiani, G., see Konuma, M. 198/199 (1999) 1045
Cerny, R., see Ivlev, G. 198/199 (1999) 1066 Cristiani, G., see Czech, E. 198/199 (1999) 1087
Chab, V., see Ivlev, G. 198/199 (1999) 1066 Czech, E., see Konuma, M. 198/199 (1999) 1045
1378 Author index
Czech, E., G. Gotz, G. Cristiani and M. Dusserre, P., see Duffar, T. 198/199 (1999) 374
Konuma, Residual impurities in high Dutta, P.S. and A.G. Ostrogorsky, Melt
purity GaAs layers grown by liquid growth of quasi-binary
phase epitaxy in H,—Ar atmosphere 198/199 (1999) 1087 (GaSb), _ (InAs), crystals 198/199 (1999) 384
Duval, W.M.B., see Seidensticker, R.G. 198/199 (1999) 988
Dalecki, W., see Hruban, A. 198/199 (1999) 282
Danilov, V.1., see Pylneva, N.A. 198/199 (1999) 546 Eckstein, R., see Hofmann, D. 198/199 (1999) 1005
Dariel, M.P., see Shimony, Y. 198/199 (1999) 583 Efremenko, I., M. Sheintuch, I. Gouz-
Dashevsky, Z., see Belenchuk, A. 198/199 (1999) 1216 man and A. Hoffman, Cluster model
Datcu, M., see Vasile, E. 198/199 (1999) 806 of DC-glow discharge enhanced dia-
Davis, S.H., see Golovin, A.A. 198/199 (1999) 1245 mond nucleation 198/199 (1999) 951
De Graauw, J., see van der Ham, F. 198/199 (1999) 744 Eisener, B.,. M. Wagner, D. Wolf and G.
Delepine, J., see Krymov, V.M. 198/199 (1999) 210 Miiller, Study of the intrinsic defects
Delepine, J., see Gurjiyants, P.A. 198/199 (1999) 227 in solution grown CulnSe, crystals
Depero, L.E., see Sangaletti, L. 198/199 (1999) 454 depending on the path of crystalliza-
Depero, L.E., L. Sangaletti, B. Allieri, E. tion 198/199 (1999) 321
Bontempi, A. Marino and M. Zocchi, Ellmer, K., see Oertel, J. 198/199 (1999) 1205
Correlation between crystallite sizes Elwenspoek, M., see Nijdam, A.J. 198/199 (1999) 430
and microstrains in TiO, nanopow- Enculescu, I., see Iliescu, B. 198/199 (1999) 507
ders 198/199 (1999) 516 Enoki, Y., see Osawa, S. 198/199 (1999) 444
Depero, L.E., see Sangaletti, L. 198/199 (1999) 1240 Epelbaum, B.M., A. Yoshikawa, K.
Derby, J.J., see Rojo, J.C. 198/199 (1999) 154 Shimamura, T. Fukuda, K. Suzuki
Dhalenne, G., see Revcolevschi, A. 198/199 (1999) 593 and Y. Waku, Microstructure of
Diéguez, E., see Plaza, J.L. 198/199 (1999) 379 Al,O;/Y;Al;O,;, eutectic _ fibers
Diéguez, E., see Bermudez, V. 198/199 (1999) 526 grown by p-PD method 198/199 (1999) 471
Dimitrova, Zl., see Gogova, D. 198/199 (1999) 1230 Eustathopoulos, N., see Duffar, T. 198/199 (1999) 374
Dinculescu, I., C. Logofatu, N. Mincu
and B. Iliescu, Fluoride crystals for Fainberg, J., see Miihe, A. 198/199 (1999) 409
IR optics, grown by the PVGF Falster, R., see Voronkov, V.V. 198/199 (1999) 399
method 198/199 (1999) 999 Fan, S., R. Sun, Y. Lin and J. Wu, Bridg-
Dohnke, 1, M. Miihlberg and W. man growth of lead potassium nio-
Neumann, ZnSe _ single-crystal bate crystals 198/199 (1999) 542
growth with SnSe as solvent 198/199 (1999) 287 Fedorov, A., see Belenchuk, A. 198/199 (1999) 1216
Dolle, J., see Schulz, D. 198/199 (1999) 1024 Fedorov, A.G., L.A. Shneiderman, A.Yu.
Domagala, J., see Prystawko, P. 198/199 (1999) 1061 Sipatov and E.V. Kaidalova, X-ray
Domingo, C., F.E. Wubbolts, R. diffraction investigation of diffusion
Rodriguez-Clemente and G.M. van in PbTe—PbSe superlattices 198/199 (1999) 1211
Rosmalen, Solid crystallization by Fedorov, I.1., see Chepurov, A.1. 198/199 (1999) 963
rapid expansion of supercritical ter- Fedotova, V.V., see Shiryaev, S.V. 198/199 (1999) 631
nary mixtures 198/199 (1999) 760 Fedotova, V.V., see Barilo, S.N. 198/199 (1999) 636
Dornberger, E., see Von Ammon, W. 198/199 (1999) 390 Fernelius, N.C., see Singh, N.B. 198/199 (1999) 588
Dornberger, E., see Miihe, A. 198/199 (1999) 409 Fife, P.C., see Charach, Ch. 198/199 (1999) 1267
Dorozhkin, S.1., see Avrov, D.D. 198/199 (1999) 1011 Filz, T., see Ostheimer, V. 198/199 (1999) 1184
Dorozhkin, S.I., see Bakin, A.S. 198/199 (1999) 1015 Fink, J., see Behr, G. 198/199 (1999) 642
Drevet, B., see Leroux, S. 198/199 (1999) 911 Fischer, B., J. Friedrich, H. Weimann
Drozdowski, M., see Pajaczkowska, A. 198/199 (1999) 440 and G. Miiller, The use of time-de-
Dudarev, S.L., see Mitura, Z. 198/199 (1999) 905 pendent magnetic fields for control of
Duffar, T., see Gondet, S. 198/199 (1999) 129 convective flows in melt growth con-
Duffar, T., see Théodore, F. 198/199 (1999) 232 figurations 198/199 (1999) 170
Duffar, T., see Barvinschi, F. 198/199 (1999) 239 Flade, T., M. Jurisch, A. Kleinwechter, A.
Duffar, T., P. Dusserre, N. Giacometti, P. Kohler, U. Kretzer, J. Prause, Th.
Boiton, J.P. Nabot and N. Eusta- Reinhold and B. Weinert, State of the
thopoulos, Effect of crucible-sample art 6” SI GaAs wafers made of con-
adhesion on grain germination 198/199 (1999) 374 ventionally grown LEC-crystals 198/199 (1999) 336
Dujardin, C., see Petrosyan, A.G. 198/199 (1999) 492 Flade, T., see Korb, J. 198/199 (1999) 343
Durose, K., see Aitken, N.M. 198/199 (1999) 984 Flade, T., see Gartner, G. 198/199 (1999) 355
Author index 1379
Féldvari, I., A. Péter, O. Szakacs and A. Gesheva, K., see Gogova, D. 198/199 (1999) 1230
Munoz F., Improvement in quality Gesheva, K., see Szekeres, A. 198/199 (1999) 1235
and performance of photorefractive Giacometti, N., see Duffar, T. 198/199 (1999) 374
Bi,TeO,; 198/199 (1999) 482 Givand, J.C., A.S. Teja and R.W. Rous-
Folman, M., see Shima, R. 198/199 (1999) 957 seau, Manipulating crystallization
Forbes, I., see Miles, R.W. 198/199 (1999) 316 variables to enhance crystal purity 198/199 (1999) 1340
Frazier, D.O., see Wang, W.S. 198/199 (1999) 578 Givoli, D., see Vigdergauz, S. 198/199 (1999) 125
Freij, S., see Reyhani, M.M. 198/199 (1999) 258
Gladki, A., see Hruban, A. 198/199 (1999) 282
Freudenberger, J., see Behr, G. 198/199 (1999) 642
Glans, P.-A., see Syvajarvi, M. 198/199 (1999) 1019
Friedrich, J., see Fischer, B. 198/199 (1999) 170 Glikin, A.E., see Kiryanova, E.V. 198/199 (1999) 697
Fu, Y.-J., Z.-S. Gao, J.-M. Liu, Y.-P. Li,
Gogova, D., A. lossifova, T. Ivanova, Zl.
H. Zeng and M.-H. Jiang, The effects
Dimitrova and K. Gesheva, Elec-
of anionic impurities on the growth
trochromic behavior in CVD grown
198/199 (1999) 682
habit and optical properties of KDP
tungsten oxide films 198/199 (1999) 1230
198/199 (1999) 1136
Fujita, K., see Koizumi, K.
Gogova, D., see Szekeres, A. 198/199 (1999) 1235
198/199 (1999) 1170
Fujita, Sg., see Ogata, K.
Goldfarb, I. and G.A.D. Briggs, The ef-
198/199 (1999) 1170
Fujita, Sz., see Ogata, K.
fect of mismatch strain’ on
198/199 (1999) 471
Fukuda, T., see Epelbaum, B.M.
Stranski-Krastanow transition in
198/199 (1999) 77
Fukuyama, T., see Obara, K.
epitaxial Ge,Si,_,/Si(001) gas-
Fiiredi-Milhofer, H., N. Garti and A. source growth 198/199 (1999) 1032
Kamyshny, Crystallization from
Golovin, A.A. S.H. Davis and A.A.
microemulsions — a novel method for
Nepomnyashchy, Modeling _ the
the preparation of new crystal forms
formation of facets and corners using
of aspartame 198/199 (1999) 1365
a convective Cahn-—Hilliard model 198/199 (1999) 1245
Furuya, H. M. Yoshimura, _ T.
Golyshev, V.D., M.A. Gonik and V.B.
Kobayashi, K. Murase, Y. Mori and
Tsvetovsky, Problems of Bi,Ge,O,;,
T. Sasaki, Crystal growth and char-
and Li,B,O,; single crystal growth by
acterization of Gd,Y , - .Ca,O(BO;),
crusibleless variant of AHP method 198/199 (1999) 501
crystal 198/199 (1999) 560
Gondet, S., T. Duffar, G. Jacob, N. Van
den Bogaert and F. Louchet, Ther-
Gal’chinetskii, L.P., see Atroshchenko,
mal stress simulation and interface
L.W. 198/199 (1999) 292
destabilisation in indium phosphide
Galkin, S.N., see Atroshchenko, L.W. 198/199 (1999) 292
grown by LEC process 198/199 (1999) 129
Gama, S., see Mota, M.A. 198/199 (1999) 850
Gonik, M.A., see Golyshev, V.D. 198/199 (1999) 501
Gao, Z.-S., see Fu, Y.-J. 198/199 (1999) 682
Gonzalez, A., see Scripa, R.N. 198/199 (1999) 825
Garcia, E., S. Veesler, R. Boistelle and C.
Goorsky, M.S., see Koontz, E.M. 198/199 (1999) 1104
Hoff, Crystallization and dissolution
Goriletsky, V.1., Evolution of structural
of pharmaceutical compounds — An
state in massive CslI-based single
experimental approach 198/199 (1999) 1360
crystals pulled from melt 198/199 (1999) 860
Gardeniers, J.G.E., see Nijdam, A.J. 198/199 (1999) 430
Goriletsky, V.I., see Panova, A.N. 198/199 (1999) 865
Garti, N., see Fiiredi-Milhofer, H. 198/199 (1999) 1365
Goto, F., see Ichimura, M. 198/199 (1999) 308
Gartner, G., T. Flade, M. Jurisch, A.
Gotz, G., see Czech, E. 198/199 (1999) 1087
Kohler, J. Korb, U. Kretzer and B.
Gouzman, I., see Efremenko, I. 198/199 (1999) 951
Weinert, Oxygen incorporation in
Granberg, R.A., D.G. Bloch and A.C.
undoped LEC-GaAs 198/199 (1999) 355
Gartstein, E., see Mogilyanski, D. 198/199 (1999) 1070 Rasmuson, Crystallization of para-
cetamol in acetone—water mixtures 198/199 (1999) 1287
Gatalskaya, V.1., see Barilo, S.N. 198/199 (1999) 636
Granier, J., see Leroux, S. 198/199 (1999) 911
Gatskevitch, E., see Ivlev, G. 198/199 (1999) 1066
Gaye, H., see Rocabois, P. 198/199 (1999) 838 Graw, G., see Behr, G. 198/199 (1999) 642
Gebre, T., see Wang, WS. 198/199 (1999) 578 Greenberg, J.H., see Ben-Dor, L. 198/199 (1999) 1151
Geertman, R.M., see Oosterhof, H. 198/199 (1999) 754 Grinyov, B.V., see Zaslavsky, B.G. 198/199 (1999) 856
Geertman, R.M., see ter Horst, J.H. 198/199 (1999) 773 Grinyova, T.B., see Panova, A.N. 198/199 (1999) 865
Gelfgat, Yu.M., Rotating magnetic fields Groppelli, S., see Sangaletti, L. 198/199 (1999) 1240
as a means to control the hydrodyn- Gross, C., W. Assmus, A. Muiznieks, A.
amics and heat/mass transfer in the Miihlbauer, C. Stenzel and O. Schulz,
processes of bulk single crystal Possible use of Skull melting under
growth 198/199 (1999) 165 microgravity 198/199 (1999) 188
1380 Author index
Grossmann, J.G., see Shekunov, B.Yu. 198/199 (1999) 1335 Huber, G., see Rogin, P. 198/199 (1999) 564
Guéneau, C., see Leroux, S. 198/199 (1999) 911 Hulliger, J., see Rogin, P. 198/199 (1999) 564
Gurjiyants, P.A., M.Yu. Starostin, V.N. Hwang, N.M. and H.M. Jang, Nuclea-
Kurlov, F. Theodore and J. Delepine, tion behavior of cage structure of car-
Effect of growth conditions on the bon in the presence of charge 198/199 (1999) 929
strength of shaped sapphire 198/199 (1999) 227 Hwang, N.M., Crystal growth by
Gutbrod, H., see Burachas, S. 198/199 (1999) 881 charged cluster focused on CVD dia-
mond process 198/199 (1999) 945
Halliday, D.P., see Aitken, N.M. 198/199 (1999) 984
Hamann, J., see Ostheimer, V. 198/199 (1999) 1184 Ichimura, M., F. Goto, Y. Ono and E.
Han, E.-M., see Yoshida, Y. 198/199 (1999) 923 Arai, Deposition of CdS and ZnS
Hanada, T., see Yoshida, Y. 198/199 (1999) 923 from aqueous solutions by a new
Hanna, M., see Shekunov, B.Yu. 198/199 (1999) 1345 photochemical technique 198/199 (1999) 308
Hansson, P.O., see Von Ammon, W. 198/199 (1999) 390 Ichino, K., see Inoue, R. 198/199 (1999) 1196
Happo, Y., see Katsumata, T. 198/199 (1999) 1226 lijima, M. and Y. Moriwaki, Effects of
Hartel, R.W., see Ben-Yoseph, E. 198/199 (1999) 1294 ionic inflow and organic matrix on
Hartwig, J., see Amon, J. 198/199 (1999) 367 crystal growth of octacalcium phos-
Hasegawa, F., see Tsuchiya, H. 198/199 (1999) 1056 phate; relevant to tooth enamel
Hasznosné-Nezdei, M., see Liszi, I. 198/199 (1999) 1330 formation 198/199 (1999) 670
Hayes, C., see Barber, P. 198/199 (1999) 815 Iliescu, B., I. Enculescu, F. Vasiliu and
Hennessy, A.J., A. Neville and K.J. M. Secu, Growth of metal structures
Roberts, An examination of addi- in quartz crystals by electrodiffusion 198/199 (1999) 507
tive-mediated wax nucleation in oil Iliescu, B., see Dinculescu, I. 198/199 (1999) 999
pipeline environments 198/199 (1999) 830 Inatomi, Y. A. Takada and K.
Henningsen, T., see Singh, N.B. 198/199 (1999) 995 Kuribayashi, Morphological change
Henry, A., see Syvajarvi, M. 198/199 (1999) 1019 of semiconductor growth interface
Heuken, M., see Beccard, R. 198/199 (1999) 1049 from solution in a magnetic field 198/199 (1999) 176
Hidalgo, P., see Plaza, J.L. 198/199 (1999) 379 Inoue, R., M. Kitagawa, T. Nishigaki, D.
Hirano, M., see Xu, X.W. 198/199 (1999) 536 Morita, K. Ichino, H. Kobayashi, M.
Hodgkiess, T., see Morizot, A. 198/199 (1999) 738 Ohishi and H. Saito, Growth and
Hoff, C., see Garcia, E. 198/199 (1999) 1360 luminescence of Zn,Mg,-,S: Mn
Hoffman, A., see Efremenko, I. 198/199 (1999) 951 ternary compound crystal films 198/199 (1999) 1196
Hoffman, A., see Shima, R. 198/199 (1999) 957 lossifova, A., see Gogova, D. 198/199 (1999) 1230
Hofmann, D., M. Bickermann, R. Eck- Irie, S., S. Isoda, K. Kuwamoto, M.J.
stein, M. K6lbl, St.G. Miiller, E. Miles, T. Kobayashi ands Y.
Schmitt, A. Weber and A. Win- Yamashita, Monolayer epitaxy of
nacker, Sublimation growth of silicon a triangular molecule on graphite 198/199 (1999) 939
carbide bulk crystals: experimental Irisawa, T., see Yoshioka, Y. 198/199 (1999) 71
and theoretical studies on defect Irmscher, K., see Schulz, D. 198/199 (1999) 1024
formation and growth rate augmen- Isaenko, L.1., see Yelisseyev, A.P. 198/199 (1999) 555
tation 198/199 (1999) 1005 Ishii, H., see Matsuoka, M. 198/199 (1999) 1299
Hollman, R.J.A.J., see Zijlema, T.G. 198/199 (1999) 789 Isoda, S., see Irie, S. 198/199 (1999) 939
Holmbiick, X. and A.C. Rasmuson, Size Ivanov, A.A., see Bakin, A.S. 198/199 (1999) 1015
and morphology of benzoic acid crys- Ivanova, T., see Gogova, D. 198/199 (1999) 1230
tals produced by drowning-out crys- Ivlev, G., E. Gatskevitch, O. Borusik, V.
tallisation 198/199 (1999) 780 Chab, P. Piikryl and R. Cerny, Pul-
Holmes, R.R., see Scripa, R.N. 198/199 (1999) 825 sed laser assisted recrystallisation of
Hopkins, F.K., see Singh, N.B. 198/199 (1999) 588 monocrystalline InSb surfaces 198/199 (1999) 1066
Hopkins, R.H., see Seidensticker, R.G. 198/199 (1999) 988 Iwanov, D. and D. Nenow, Equilibrium
Hopkins, R.H., see Singh, N.B. 198/199 (1999) 995 form of camphene crystals 198/199 (1999) 96
Hovakimian, L.B. and S.-i. Tanaka, In- lyoda, T., see Osawa, S. 198/199 (1999) 444
volvement of image forces in dynam-
ics of epitaxial dislocation arrays 198/199 (1999) 900 Jackson, K.A., Computer modeling of
Hruban, A., W. Dalecki, K. Nowysz, S. atomic scale crystal growth processes 198/199 (1999) 1
Strzelecka and A. Gtadki, Synthesis Jacob, G., see Gondet, S. 198/199 (1999) 129
and crystallization of ZnSe by the Jadhav, V.K., see Tavare, N.S. 198/199 (1999) 1320
liquid encapsulation technique 198/199 (1999) 282 Jager-Waldau, A., see Weiss, T. 198/199 (1999) 1190
Author index 1381
Jang, H.M., see Hwang, N.M. 198/199 (1999) 929 Kiryanova, E.V. and A.E. Glikin, The laws
Janzén, E., see Syvajarvi, M. 198/199 (1999) 1019 of fluorite and calcite habit formation
Jiang, M.-H., see Fu, Y.-J. 198/199 (1999) 682 in terms of the morphogenetic struc-
Johansson, L.I., see Syvajarvi, M. 198/199 (1999) 1019 tural-chemical concept 198/199 (1999) 697
Johnstone, J.. C. Peacock and K.J. Kishida, Y. and K. Okazawa, Geos-
Roberts, Application of polarised trophic turbulence in CZ silicon cru-
NEXAFS spectroscopy to the struc- cible 198/199 (1999) 135
tural characterisation of condensed Kisil, L.1., see Zaslavsky, B.G. 198/199 (1999) 856
molecular surfaces and interfaces 198/199 (1999) 275 Kitagawa, M., see Inoue, R. 198/199 (1999) 1196
Juergensen, H., see Beccard, R. 198/199 (1999) 1049 Kitamura, M., see Balykov, L.N. 198/199 (1999) 32
Jurisch, M., see Rudolph, P. 198/199 (1999) 325 Kleinwechter, A., see Flade, T. 198/199 (1999) 336
Jurisch, M., see Flade, T. 198/199 (1999) 336 Klos, A., see Pajaczkowska, A. 198/199 (1999) 440
Jurisch, M., see Korb, J. 198/199 (1999) 343 Kobayashi, H., see Inoue, R. 198/199 (1999) 1196
Jurisch, M., see Gartner, G. 198/199 (1999) 355 Kobayashi, M., see Kaneko, F. 198/199 (1999) 1352
Kobayashi, T., see Furuya, H. 198/199 (1999) 560
Kobayashi, T., see Irie, S. 198/199 (1999) 939
Kaidalova, E.V., see Fedorov, A.G. 198/199 (1999) 1211
Kobayashi, Y., see Tachibana, M. 198/199 (1999) 661
Kakimoto, K., S. Kikuchi and H. Ozoe,
Kohler, A., see Flade, T. 198/199 (1999) 336
Molecular dynamics simulation of
oxygen in silicon melt 198/199 (1999) 114 Kohler, A., see Korb, J. 198/199 (1999) 343
Kalanda, N.A., see Zhigunov, D.1. 198/199 (1999) 605 Kohler, A., see Gartner, G. 198/199 (1999) 355
Kohler, R., see Mogilyanski, D. 198/199 (1999) 1070
Kamp, M., see Prystawko, P. 198/199 (1999) 1061
Koiranen, T., T. Kilpié, J. Nurmi and
Kamyshny, A., see Fiiredi-Milhofer, H. 198/199 (1999) 1365
H.V. Norden, The modelling and
Kaneko, F., K. Tashiro and M.
simulation of dissolution of sucrose
Kobayashi, Polymorphic _ trans-
crystals 198/199 (1999) 749
formations during crystallization
Koizumi, K., P.O. Vaccaro, K. Fujita, M.
processes of fatty acids studied with
Tateuchi and T. Ohachi, Lateral wet
FT-IR spectroscopy 198/199 (1999) 1352
oxidation of AlAs layer in
Kantser, V., see Belenchuk, A. 198/199 (1999) 1216
GaAs/AIAs heterostructures grown
Karabashey, S., see Shulyatev, D. 198/199 (1999) 511
by MBE on GaAs (n 1 1)A substrates 198/199 (1999) 1136
Kasprowicz, D., see Pajaczkowska, A. 198/199 (1999) 440
Kojima, K., see Tachibana, M. 198/199 (1999) 661
Kasuga, M., see Yoshioka, Y. 198/199 (1999) 71
Kojima, K., see Tachibana, M. 198/199 (1999) 665
Katrunov, K., see Burachas, S. 198/199 (1999) 881
Kokh, A.E. and N.G. Kononova, II.
Katsumata, T., see Osawa, S. 198/199 (1999) 444
Crystal growth through forced stir-
Katsumata, T., see Kawasaki, M. 198/199 (1999) 449
ring of melt or solution in Czoch-
Katsumata, T., R. Sakai, S. Komuro, T.
ralski configuration 198/199 (1999) 161
Morikawa and H. Kimura, Growth
KOlbl, M., see Hofmann, D. 198/199 (1999) 1005
and characteristics of long duration
Kolodziejski, L.A., see Koontz, E.M. 198/199 (1999) 1104
phosphor crystals 198/199 (1999) 869
Komuro, S., see Osawa, S. 198/199 (1999) 444
Katsumata, T., T. Murakami, Y. Happo
Komuro, S., see Katsumata, T. 198/199 (1999) 869
and S. Komuro, Preparation of rare-
Komuro, S., see Katsumata, T. 198/199 (1999) 1226
earth oxide films by a pyrolysis tech-
Kondo, S., see Shindo, H. 198/199 (1999) 253
nique from acetylacetonates 198/199 (1999) 1226
Kono, K., see Tachibana, M. 198/199 (1999) 665
Kawasaki, M., T. Katsumata, Y. Oshiba
Kononova, N.G., see Kokh, A.E. 198/199 (1999) 161
and M. Koshiji, Flux growth of thu-
Kononova, N.G., see Pylneva, N.A. 198/199 (1999) 546
lium vanadate single crystals 198/199 (1999) 449
Konstantinov, V.I., see Yakimovich, V.N. 198/199 (1999) 975
Keir, A.M., see Mizuno, K. 198/199 (1999) 1146
Konstantinov, V.I., see Levchenko, V.I. 198/199 (1999) 980
Khlyap, G., see Andrukhiv, A. 198/199 (1999) 1162
Konuma, M., G. Cristiani, E. Czech and
Kida, S., see Yap, Y.K. 198/199 (1999) 1028
I. Silier, Liquid phase epitaxy of Si
Kikuchi, S., see Kakimoto, K. 198/199 (1999) 114 from Pb solutions 198/199 (1999) 1045
Kilpid, T., see Koiranen, T. 198/199 (1999) 749 Konuma, M., see Czech, E. 198/199 (1999) 1087
Kim, D.H., see Wang, J.H. 198/199 (1999) 120 Koontz, E.M., G.D. U’Ren, M.H. Lim,
Kim, D.H., see Kwon, S.K. 198/199 (1999) 1039 L.A. Kolodziejski, M.S. Goorsky,
Kimmel, G., see Shimony, Y. 198/199 (1999) 583 G.S. Petrich and H.1. Smith, Over-
Kimura, H., see Katsumata, T. 198/199 (1999) 869 growth of (In,Ga)(As,P) on rectangu-
Kirchner, C., see Prystawko, P. 198/199 (1999) 1061 lar-patterned surfaces using gas
Kirillov, B.A., see Bakin, A.S. 198/199 (1999) 1015 source molecular beam epitaxy 198/199 (1999) 1104
1382 Author index
Koporulina, E.V., N.I. Leonyuk, S.N. Kurlov, V.N., see Krymov, V.M. 198/199 (1999) 210
Barilo, L.A. Kurnevich, G.L. By- Kurlov, V.N., see Gurjiyants, P.A. 198/199 (1999) 227
chkov, A.V. Mokhov, G. Bocelli and Kurnevich, L.A., see Koporulina, E.V. 198/199 (1999) 460
L. Righi, Flux growth, composition, Kurnevich, L.A., see Zhigunov, D.1. 198/199 (1999) 605
structural and thermal characteristics Kurnevich, L.A., see Barilo, S.N. 198/199 (1999) 716
of (R,Y,-,)AI;(BO3)4 (R = Nd, Gd; Kurochkin, L.A., see Zhigunov, D.1. 198/199 (1999) 605
x = 1, 0.6, 0.65, 0.7 and 0.75) crystals 198/199 (1999) 460 Kurochkin, L.A., see Shiryaev, S.V. 198/199 (1999) 631
Korb, J., T. Flade, M. Jurisch, A. Kohler,
Kurz, M., A. Pusztai and G. Miiller, De-
Th. Reinhold and B. Weinert, Car-
velopment of a new powerful com-
bon, oxygen, boron, hydrogen and
puter code CrysVUN + +
nitrogen in the LEC growth of SI
especially designed for fast simula-
GaAs: a thermochemical approach 198/199 (1999) 343 tion of bulk crystal growth processes 198/199 (1999) 101
Korb, J., see Gartner, G. 198/199 (1999) 355 Kurz, M., see Bottcher, K. 198/199 (1999) 349
Korin, E., see Bronfenbrener, L. 198/199 (1999) Kushida, K., see Kuriyama, K. 198/199 (1999) 802
Korzun, B.V., V.A. Virchenko and V.N. Kutas, A.A., see Yakimovich, V.N. 198/199 (1999) 975
Yakimovich, *’Fe and ''°Sn Més-
Kutcher, S.W., see Burger, A. 198/199 (1999) 872
sbauer spectroscopy of the CuAlS,
Kuwamoto, K.., see Irie, S. 198/199 (1999) 939
chalcopyrite semiconductor 198/199 (1999)
Kwon, S.K., D.H. Kim and J.T. Baek,
Koshiji, M., see Kawasaki, M. 198/199 (1999)
Silicon epitaxial film growth on sili-
Koukitu, A., T. Taki, K. Narita and H.
con substrate exposed to UV-excited
Seki, In situ monitoring of arsenic
NF;;/H, gas for native oxide removal 198/199 (1999) 1039
desorption on GaAs (1 1 1)B surface
in atomic layer epitaxy 198/199 (1999) 1111
Lacey, G., see Mizuno, K. 198/199 (1999) 1146
Kousai, S., A.Y amashiki, T. Ogura and
Ladeinde, F., see Zhang, T. 198/199 (1999) 141
T. Nishinaga, Real-time observations
Lai, Y.-J., J.-C. Chen and K.-C. Liao,
of mesa shrinkage process in MBE of
Investigations of ferroelectric domain
GaAs on (1 1 1)B patterned substra-
structures in the MgO: LiNbO,
tes and theoretical analysis 198/199 (1999) 1119
fibers by LHPG 198/199 (1999) 531
Koyava, V.T., see Barilo, S.N. 198/199 (1999) 716
Lakatos, B.G., see Liszi, I. 198/199 (1999) 1330
Kramer, H.J.M., see Neumann, A.M. 198/199 (1999) 723
Larkin, J., see Chen, Q:S. 198/199 (1999) 710
Kramer, H.J.M., S.K. Bermingham and
Lauer, St., see Ostheimer, V. 198/199 (1999) 1184
G.M. van Rosmalen, Design of indus-
Le Gal, H., see Barvinschi, F. 198/199 (1999) 239
trial crystallisers for a given product
quality 198/199 (1999) 729 Lebbou, K., see Sangaletti, L. 198/199 (1999) 454
Krempl, P.W., see Wallndfer, W. 198/199 (1999) 487 Lebedev, A.O., see Bakin, A.S. 198/199 (1999) 1015
Kretzer, U., see Flade, T. 198/199 (1999) 336 Lee, M.-y. and G.M. Parkinson, Growth
Kretzer, U., see Gartner, G. 198/199 (1999) 355 rates of gibbsite single crystals deter-
Krispel, F., see Walindfer, W. 198/199 (1999) 487 mined using in situ optical micros-
Krymov, V.M., V.N. Kurlov, P.I. Anto- copy 198/199 (1999) 270
nov, F. Theodore and J. Delepine, Lee, Y.-S. and C.-H. Chun, Experiments
Temperature distribution near the in- on the oscillatory convection of low
terface in sapphire crystals grown by Prandtl number liquid in Czochralski
EFG and GES methods 198/199 (1999) 210 crystal growth under an axial mag-
Kudin, A.M., see Zaslavsky, B.G. 198/199 (1999) 856 netic field 198/199 (1999)
Kuleshov, N.V., see Levchenko, V.I. 198/199 (1999) 980 Legrand, B., see Roussel, J.-M. 198/199 (1999)
Kumagai, H., see Xu, X.W. 198/199 (1999) 536 Lehmann, J., see Rocabois, P. 198/199 (1999)
Kumaresan, R., S. Moorthy Babu and P. Lehoczky, S.L., see Price, M.W. 198/199 (1999)
Ramasamy, Investigations on electro- Lehoczky, S.L., see Price, M.W. 198/199 (1999)
chemical growth and properties of Lemasson, P., see Triboulet, R. 198/199 (1999)
mercury cadmium telluride semicon- Leonuk, N.1., see Barilo, S.N. 198/199 (1999)
ductor thin films for device fabrication 198/199 (1999) 1165 Leonyuk, L., see Shvanskaya, L. 198/199 (1999)
Kunst, M., see Weiss, T. 198/199 (1999) 1190 Leonyuk, L., G.-J. Babonas, V. Maltsev,
Kuribayashi, K., see Inatomi, Y. 198/199 (1999) 176 A. Vetkin, V. Rybakov and A. Reza,
Kuriyama, K., R. Taguchi, K. Kushida Structural features and anomalies in
and K. Ushiyama, Growth and band the temperature dependence of resis-
gap of the filled tetrahedral semicon- tance in superconducting Bi-2212
ductor LiZnN 198/199 (1999) 802 single crystals 198/199 (1999) 619
Author index 1383
Leonyuk, L., see Maltsev, V. 198/199 (1999) 626 Lux-Steiner, M.Ch., see Weiss, T. 198/199 (1999) 1190
Leonyuk, N.I., see Koporulina, E.V. 198/199 (1999) 460 Lynn, J.W., see Barilo, S.N. 198/199 (1999) 636
Lereah, Y. and I. Zarudi, The kinetics of
Ge branches growth in Al : Ge crys- Ma, X., see Burger, A. 198/199 (1999) 872
tallization 198/199 (1999) 62 MacMillan, M.F., see Syvajarvi, M. 198/199 (1999) 1019
Leroux, S., J.Le Ny, C. Guéneau, J. Mainzer, N., see Avrahami, Y. 198/199 (1999) 264
Granier, B. Drevet and D. Camel, Maiwa, K., see Plomp, M. 198/199 (1999) 246
Condensation and flowing of sil- Maksimoy, I.L., see Balykov, L.N. 198/199 (1999) 32
ver—copper alloys in a solid—liquid Maksimov, I.L., see Sanada, M. 198/199 (1999) 67
domain of the phase diagram 198/199 (1999) 911
Mallika, C., see Prasad, S.R. 198/199 (1999) 194
Leszezynski, M., see Prystawko, P. 198/199 (1999) 1061 Maltsev, V., see Leonyuk, L. 198/199 (1999) 619
Levchenko, V.I., see Yakimovich, V.N. 198/199 (1999) 975
Maltsev, V., L. Leonyuk, G.-J. Babonas,
Levchenko, V.I., V.N. Yakimovich, L.1. A. Vetkin and A. Reza, A use of the
Postnova, V.I. Konstantinov, V.P. melt decanting method for the separ-
Mikhailov and N.V. Kuleshov, Prep- ation of co-crystallizing phases in the
aration and properties of bulk system Bi(Pb)-Sr—Ca(Y,RE)-Cu-—O 198/199 (1999) 626
ZnSe: Cr single crystals 198/199 (1999) 980 Mamedov, V.V., see Ataev, B.M. 198/199 (1999) 1222
Li, J.-S. and K. Nishioka, Generalized
Mamiya, M., T. Suzuki and H. Takei,
kinetic potential and mechanism of
A phase relation study of Bi-based
the ridge crossing in binary nuclea- copper oxide super conductors as
tion 198/199 (1999) 27 a function of partial oxygen pressure 198/199 (1999) 611
Li, L., see Xu, X.W. 198/199 (1999) 536
Manko, V., see Burachas, S. 198/199 (1999) 881
Li, Y.-P., see Fu, Y.-J. 198/199 (1999) 682 Marable, M., see Singh, N.B. 198/199 (1999) 588
Liao, K.-C., see Lai, Y.-J. 198/199 (1999) 531 Marangoni, A.G., see Narine, S.S. 198/199 (1999) 1315
Lifshitz, E., see Litvin, I.D. 198/199 (1999) 313 Marino, A., see Depero, L.E. 198/199 (1999) 516
Lim, M.H., see Koontz, E.M. 198/199 (1999) 1104
Martinov, V., see Burachas, S. 198/199 (1999) 881
Lin, E.-K., see Chang, L.-B. 198/199 (1999) 1092 Martynov, V., see Nagornaya, L. 198/199 (1999) 877
Lin, Y., see Fan, S. 198/199 (1999) 542 Masuda, M. and T. Nishinaga, Macro-
Lipovskii, A.A., see Litvin, I.D. 198/199 (1999) 313 step formation and growth condition
Lipson, S.G., see Notcovich, A.G. 198/199 (1999) 10 dependence in MBE of GaAs on
Lipson, S.G., see Braslavsky, I. 198/199 (1999) 56 GaAs (1 1 1)B vicinal surface 198/199 (1999) 1098
Liszi, 1, M. Hasznosné-Nezdei, B.G. Matsui, T., see Yoshioka, Y. 198/199 (1999) 71
Lakatos, Ts.J. Sapundzhiev and R.G. Matsuoka, M., M. Yamanobe, N.
Popov, Determination of the crystal Tezuka, H. Takiyama and H. Ishii,
growth mechanism of KCl in Polymorphism, morphologies and
ethanol—water system 198/199 (1999) 1330 bulk densities of DL-methionine ag-
Litvin, I.D., H. Porteanu, E. Lifshitz and giomerate crystals 198/199 (1999) 1299
A.A. Lipovskii, Optically detected Mazelsky, R., see Seidensticker, R.G. 198/199 (1999) 988
magnetic resonance studies of CdS Mazelsky, R., see Singh, N.B. 198/199 (1999) 995
nanoparticles grown in phosphate Méndez, B., see Plaza, J.L. 198/199 (1999) 379
glass 198/199 (1999) 313 Merkulov, A.A., see Yelisseyev, A.P. 198/199 (1999) 555
Liu, J.-M., see Fu, Y.-J. 198/199 (1999) 682 Meyer, R., see Singh, N.B. 198/199 (1999) 588
Liu, L.-T., see Chen, J.-C. 198/199 (1999) 476 Mikhailov, V.P., see Barilo, S.N. 198/199 (1999) 716
Liu, X.Y., Principles for predicting the Mikhailov, V.P., see Levchenko, V.I. 198/199 (1999) 980
morphology of crystals and applica-
Milenkovic, S., see Caram, R. 198/199 (1999) 844
tion to n-paraffin crystals 198/199 (1999) 1281 Miles, M.J., see Jrie, S. 198/199 (1999) 939
Logofatu, C., see Dinculescu, I. 198/199 (1999) 999 Miles, R.W., K.T. Ramakrishna Reddy
Loser, W., see Behr, G. 198/199 (1999) 642 and I. Forbes, Formation of poly-
Louchet, F., see Gondet, S. 198/199 (1999) 129 crystalline thin films of CulnS, by
Louchet, F., see Théodore, F. 198/199 (1999) 232 a two step process 198/199 (1999) 316
Louhi-Kultanen, M., see Sha, Z.L. 198/199 (1999) 692 Minato, A., see Ueno, S. 198/199 (1999) 1326
Liidge, A., see Mihlbauer, A. 198/199 (1999) 107 Mincu, N., see Dinculescu, I. 198/199 (1999) 999
Ludwig, W., see Amon, J. 198/199 (1999) 367 Mitichkin, A.1., see Zaslavsky, B.G. 198/199 (1999) 856
Lukasiewicz, T., see Sokdlska, I. 198/199 (1999) 521 Mitrovic, M.M., A.A. Zekié and Lj.S.
Lundager Madsen, H.E., see Suvorova, Petrusevski, Growth rate dispersion
E.1. 198/199 (1999) 677 of small KDP crystals 198/199 (1999) 687
1384 Author index
Mitura, Z., S.L. Dudarev and M.J. Miiller, G., see Miihe, A. 198/199 (1999) 409
Whelan, Interpretation of reflection Miiller, St.G., see Hofmann, D. 198/199 (1999) 1005
high-energy electron diffraction oscil- Miiller, T., see Schulz, D. 198/199 (1999) 1024
lation phase 198/199 (1999) 905 Mullins, J.T., see Aitken, N.M. 198/199 (1999) 984
Mizuno, K., P. Mock, B.K. Tanner, G. Munoz F., A., see Foldvari, I. 198/199 (1999) 482
Lacey, C.R. Whitehouse, G.W. Smith Munoz, V., see Triboulet, R. 198/199 (1999) 968
and A.M. Keir, Partial strain relax- Murakami, T., see Katsumata, T. 198/199 (1999) 1226
ation in (In,Ga)As epilayers on GaAs Murase, K., see Furuya, H. 198/199 (1999) 560
by means of twin formation 198/199 (1999) 1146
Mock, P., see Mizuno, K. 198/199 (1999) 1146 N’tep, J.M., see Triboulet, R. 198/199 (1999) 968
Mogilyanski, D., M. Blumin, E. Gar- Nabot, J.P., see Duffar, T. 198/199 (1999) 374
tstein, R. Opitz and R. Kohler, Struc- Nagano, O., see Obara, K. 198/199 (1999) 894
tural characterization of LPOMVPE Nagornaya, L., S. Burachas, Yu. Vostret-
grown AlAs/GaAs multilayers 198/199 (1999) 1070 sov, V. Martynov and V. Ryzhikov,
Mokhovy, A.V., see Koporulina, E.V. 198/199 (1999) 460 Studies of ways to reduce defects in
Moncorgé, R., see Sangaletti, L. 198/199 (1999) 454 CdWO, single crystals 198/199 (1999) 877
Moorthy Babu, S., see Kumaresan, R. 198/199 (1999) 1165 Nagornaya, L., see Burachas, S. 198/199 (1999) 881
Mora-Sero, L., see Triboulet, R. 198/199 (1999) 968 Narayanan, R., see Prasad, S.R. 198/199 (1999) 194
Morato, S.P., see Santo, A.M.E. 198/199 (1999) 466 Narayanan, R., see Singh, N.B. 198/199 (1999) 588
Mori, Y., see Furuya, H. 198/199 (1999) 560 Narine, S.S. and A.G. Marangoni,
Mori, Y., see Adachi, H. 198/199 (1999) 568 Microscopic and rheological studies
Mori, Y., see Yap, Y.K. 198/199 (1999) 1028 of fat crystal networks 198/199 (1999) 1315
Morikawa, T., see Osawa, S. 198/199 (1999) 444 Narita, K., see Koukitu, A. 198/199 (1999) 1111
Morikawa, T., see Katsumata, T. 198/199 (1999) 869 Naritsuka, S., see Yan, Z. 198/199 (1999) 1077
Morita, D., see Inoue, R. 198/199 (1999) 1196 Naritsuka, S., Z. Yan and T. Nishinaga,
Moriwaki, Y., see lijima, M. 198/199 (1999) 670 Two-dimensional nucleation at
Morizot, A., A. Neville and T. Hodg- stacking fault during InP microchan-
kiess, Studies of the deposition of nel epitaxy 198/199 (1999) 1082
CaCO, on a stainless steel surface by Ndap, J.O., see Burger, A. 198/199 (1999) 872
a novel electrochemical technique 198/199 (1999) 738 Nemirovsky, Y., see Stolyarova, S. 198/199 (1999) 1157
Mota, M.A., A.A. Coelho, J.M.Z. Be- Nemirovsky, Y., see Cohen, K. 198/199 (1999) 1174
jarano, S. Gama and R. Caram, Di- Nemirovsky, Y., see Chack, A. 198/199 (1999) 1179
rectional growth and _ characteri- Nenow, D., see Iwanov, D. 198/199 (1999) 96
zation of Fe-Al—Nb eutectic alloys 198/199 (1999) 850 Nepomnyashchy, A.A., see Golovin, A.A. 198/199 (1999) 1245
Miihe, A., R. Backofen, J. Fainberg, G. Nepomnyashchy, A.A., see Rotstein,
Miiller, E. Dornberger, E. Tomzig H.G. 198/199 (1999) 1262
and W. Von Ammon, Oxygen distri- Neubert, M., see Bottcher, K. 198/199 (1999) 349
bution in silicon melt during a stan- Neumann, A.M., S.K. Bermingham,
dard Czochralski process studied by H.J.M. Kramer and G.M. van Ros-
sensor measurements and compari- malen, The effect of the impeller
son to numerical simulation 198/199 (1999) 409 speed on the product crystal size dis-
Mihlbauer, A., A. Muiznieks, G. Ram- tribution (CSD) a 22 liter draft tube
ing, H. Riemann and A. Liidge, Nu- (DT) crsystallizer 198/199 (1999) 723
merical modelling of the microscopic Neumann, W., see Dohnke, I. 198/199 (1999) 287
inhomogeneities during FZ silicon Neumann, W., see Penzel, S. 198/199 (1999) 811
growth 198/199 (1999) 107 Neuroth, G. and F. Wallrafen, Czoch-
Mihlbauer, A., see Gross, C. 198/199 (1999) 188 ralski growth and characterisation of
Milberg, M., see Dohnke, I. 198/199 (1999) 287 pure and doped YAIO, single crys-
Muiznieks, A., see Miihlbauer, A. 198/199 (1999) 107 tals 198/199 (1999) 435
Muiznieks, A., see Gross, C. 198/199 (1999) 188 Neville, A., see Morizot, A. 198/199 (1999) 738
Mukovskii, Ya., see Shulyatev, D. 198/199 (1999) 511 Neville, A., see Hennessy, A.J. 198/199 (1999) 830
Miiller, G., see Kurz, M. 198/199 (1999) 101 Nijdam, A.J., see van Suchtelen, J. 198/199 (1999) 17
Miiller, G., see Fischer, B. 198/199 (1999) 170 Nijdam, A.J., J. van Suchtelen, J.W. Be-
Miiller, G., see Eisener, B. 198/199 (1999) 321 renschot, J.G.E. Gardeniers and M.
Miiller, G., see Béttcher, K. 198/199 (1999) 349 Elwenspoek, Etching of silicon in al-
Miiller, G., see Amon, J. 198/199 (1999) 361 kaline solutions: a critical look at the
Miiller, G., see Amon, J. 198/199 (1999) 367 {111} minimum 198/199 (1999) 430