Journal of Crystal Growth 1997: Vol 180 Index

10 Pages·1997·2.4 MB·English

JOURNAL OF CRYSTAL
GROWTH
ELSEVIER Journal of Crystal Growth 180 (1997) 714-719
Author index
Abricka, M., J. Kriimins and Yu. Gelfgat, Nu- Ben Hadid, H., D. Henry and R. Touihn,
merical simulation of MHD rotator action Unsteady three-dimensional buoyancy-
on hydrodynamics and heat transfer in driven convection in a circular cylindrical
single crystal growth processes 180 (1997) 388 cavity and its damping by magnetic
Ahmed, M.U., S.J.C. Irvine, A. Stafford, L.M. field 180 (1997) 433
Smith, A.C. Jones and S.A. Rushworth, Bergunde, T., M. Dauelsberg, L. Kadinski,
Decomposition behaviour of nitrogen pre- Yu.N. Makarov, V.S. Yuferev, D. Schmitz,
cursors for p-type doping of pyrolytic and G. Strauch and H. Jiirgensen, Process opti-
180 (19971)6 7
photoassisted MOVPE of ZnSe misation of MOVPE growth by numerical
180 (1997) 1
Aiga, M., see Takemi, M. modelling of transport phenomena includ-
Akiyama, Y., see Imaishi, N. 180 (19976)8 0 ing thermal radiation 180 (19976)6 0
Amon, J., see Weimann, H. 180 (19975)6 0 Bernard, M., see Corre, S. 180 (19976)0 4
Angelier, B., see Santailler, J.L. 180 (19976)9 8 Bertrand, F., see Davoust, L. 180 (19974)2 2
Aota, J., see Maffei, N. 180 (19971)0 5 Bertrand, O., see Holuigue, J. 180 (19975)9 7
Aoyagi, Y., see Ishii, M. 180 (1997) 15 Bliss, D.F., see Zou, Y.F. 180 (19975)2 4
Arquis, E., see Holuigue, J. 180 (19975)9 7 Boiton, P., see Santailler, J.L. 180 (19976)9 8
Assaker, R., N. Van den Bogaert and F. Dup- Bondarenko, G.V., see Balitsky, D.V. 180 (19972)1 2
ret, Time-dependent simulation of the Buhrig, E., see Barz, R.U. 180 (19974)1 0
growth of large silicon crystals by the
Czochralski technique using a turbulent
model for melt convection 180 (1997) 450
Atherton, L.J., see Zaitseva, N.P. 180 (1997) 255 Capelle, B., see Zaccaro, J. 180 (1997) 229
Chen, G., A. Lizée and B. Roux, Bifurcation
analysis of the thermocapillary convection
Bae, I.H., see Leem, J.Y. 180 (1997) 40 in cylindrical liquid bridges 180 (1997) 638
Bae, S.I., J. Ichikawa, K. Shimamura, H. Chen Zhiwen, Zhang Shuyuan, Tan Shun,
Onodera and T. Fukuda, Doping effects of Li Fanging, Wang Jian, Jin Sizhao and
Mg and/or Fe ions on congruent LiNbO; Zhang Yuheng, Preparation and electron
single crystal growth 180 (1997) 94 spin resonance effect of nanometer-sized
Balitsky, D.V., V.S. Balitsky, D.Yu. Push- Mn,0, 180 (19972)8 0
charovsky, G.V. Bondarenko and A.V. Cherng, Y.T., see Sze, P.W. 180 (19971)7 7
Kosenko, Growth and characterization of Chiang, C.D., see Sze, P.W. 180 (19971)7 7
GeO, single crystals with the quartz struc- Cho, Y.K., see Leem, J.Y. 180 (1997) 40
ture 180 (1997) 212 Cho, Young Sang, see Chung, Won Young 180 (19976)9 1
Balitsky, V.S., see Balitsky, D.V. 180 (19972)1 2 Choi, Jung-Il, Seungtae Kim, Hyung Jin Sung,
Barat, C., see Santailler, J.L. 180 (1997) 698 A. Nakano and H.S. Koyama, Transition
Baruchel, J., see Rejmankova, P. 180 (1997) 85 flow modes in Czochralski convection 180 (1997) 305
Barz, R.U., G. Gerbeth, U. Wunderwald, E. Choi, Yong Dae, see Nam, Sungun 180 (1997) 47
Buhrig and Yu.M. Gelfgat, Modelling of Chou, W.Y., see Sze, P.W. 180 (1997) 177
the isothermal melt flow due to rotating Chui, W.K., J. Glimm, F.M. Tangerman, H.
magnetic fields in crystal growth 180 (1997) 410 Zhang and V. Prasad, A parallel algorithm
Barz, R.U., P. Sabhapathy and M. Salcudean, for multizone, multiphase systems with ap-
A numerical study of convection during plication to crystal growth 180 (1997) 534
THM growth of CdTe with ACRT 180 (1997) 566 Chun, Ch.-H., see Lee, Y.-S. 180 (1997) 477
Author index 715
Chung, Won Young, Do Hyun Kim and Faleev, N.N., see Mishurnyi, V.A. 180 (1997) 34
Young Sang Cho, Modelling of Cu thin Faure, J., see Simon, L. 180 (19971)8 5
film growth by MOCVD process in a verti- Feigelson, R.S., see Lee, M. 180 (19972)2 0
cal reactor 180 (1997) 691 Ferriol, M., see Palumbo-Romand, V. 180 (19972)3 8
Clavaguera, N., see Palumbo-Romand, V. 180 (1997) 238 Ferriol, M., see Clavaguera, N. 180 (19972)4 8
Clavaguera, N., V. Palumbo-Romand, M. Flaherty, J.E., see Givoli, D. 180 (19975)1 0
Ferriol and M.T. Cohen-Adad, Crystalli- Fukuda, T., see Bae, S.I. 180 (1997) 94
zation mechanisms of stoichiometric mono- Fukuda, T., see Tsukada, T. 180 (19975)4 3
methylhydrazine—water mixtures 180 (1997) 248 Furukawa, Y., see Park, B.M. 180 (19971)0 1
Cohen-Adad, M.T., see Palumbo-Romand, V. 180 (1997) 238
Cohen-Adad, M.T., see Clavaguera, N. 180 (1997) 248
Gallagher, H.G., see Qi, X. 180 (1997) 73
Corre, S., T. Duffar, M. Bernard and M. Es-
Gates, D.J., Surface angle transitions and
pezel, Numerical simulation and valida-
facets in a solvable TSK model of steady
tion of the Peltier pulse marking of 180 (19971)3 6
crystal growth
solid/liquid interfaces 180 (1997) 604 180 (19973)8 8
Gelfgat, Yu. M., see Abricka, M.
Cowley, M.D., see Davoust, L. 180 (1997) 422 180 (19974)1 0
Gelfgat, Yu.M., see Barz, R.U.
180 (19974)1 0
Gerbeth, G., see Barz, R.U.
Dauelsberg, M., see Bergunde, T. 180 (1997) 660
180 (19976)9 8
Giacometti, N., see Santailler, J.L.
Davoust, L., R. Moreau, M.D. Cowley, P.A.
180 (19976)7 0
Giovangigli, V., see Ern, A.
Tanguy and F. Bertrand, Numerical and
Givoli, D., J.E. Flaherty and M.S. Shephard,
analytical modelling of the MHD buoy-
Analysis of InP LEC melt flows using
ancy-driven flow in a Bridgman crystal
180 (19975)1 0
180 (19974)2 2 a parallel adaptive finite element scheme
growth configuration
180 (19975)3 4
180 (1997) 34 Glimm, J., see Chui, W.K.
De Anda, F., see Mishurnyi, V.A.
180 (19971)1 3
180 (19972)5 5 Godlewski, Jr., T.S., see Lenhoff, A.M.
De Yoreo, J.J., see Zaitseva, N.P.
180 (1997) 34
180 (19972)5 5 Gorbatchev, A.Yu., see Mishurnyi, V.A.
Dehaven, M.R., see Zaitseva, N.P.
180 (19973)4 3
180 (19974)9 7 Graf, D., see Dornberger, E.
Derby, J.J., see Zhou, Y.
180 (19973)5 3
180 (1997) 81 Graf, D., see Vanhellemont, J.
Dieckmann, R., see Markgraf, S.A.
180 (19971)1 3 Grein, C.H., First principles calculations of
Dilmore, J.G., see Lenhoff, A.M.
180 (1997) 54
Si(2 1 1) surface reconstructions
Dornberger, E., D. Graf, M. Suhren, U. Lam-
bert, P. Wagner, F. Dupret and W. von
Ammon, Influence of boron concentration Han, T.P.J., see Qi, X. 180 (1997) 73
on the oxidation-induced stacking fault Hasebe, M., see Tanaka, M. 180 (1997) 487
ring in Czochralski silicon crystals 180 (1997) 343 Henderson, B., see Qi, X. 180 (1997) 73
Dornberger, E., E. Tomzig, A. Seidl, S. Henry, D., see Ben Hadid, H. 180 (1997) 433
Schmitt, H.-J. Leister, Ch. Schmitt and G. Higgs, V., see Vanhellemont, J. 180 (1997) 353
Miller, Thermal simulation of the Czoch- Holuigue, J.,O. Bertrand and E. Arquis, Sol-
ralski silicon growth process by three utal convection in crystal growth: effect of
different models and comparison with ex- interface curvature on flow structuration
perimental results 180 (19974)6 1 in a three-dimensional cylindrical config-
Duffar, T., see Corre, S. 180 (19976)0 4 uration 180 (19975)9 7
Duffar, T., see Tatarchenko, V.A. 180 (19976)1 5 Hou Xun, see Wang Xiaoliang 180 (1997) 22
Duffar, T., see Santailler, J.L. 180 (19976)9 8 180 (19971)7 7
Houng, M.P., see Sze, P.W.
Dupret, F., see Dornberger, E. 180 (19973)4 3 Hozawa, M., see Kobayashi, M. 180 (19971)5 7
Dupret, F., see Assaker, R. 180 (19974)5 0 Hozawa, M., see Tsukada, T. 180 (19975)4 3
Dupret, F., see Olivari, E. 180 (19976)2 7 Hwang, J.S., see Sze, P.W. 180 (19971)7 7
Dusserre, P., see Santailler, J.L. 180 (19976)9 8
180 (19972)2 9
Eguchi, M., see Kakimoto, K. 180 (1997) 442 Ibanez, A., see Zaccaro, J.
180 (1997) 94
Ern, A., V. Giovangigli and M.D. Smooke, Ichikawa, J., see Bae, S.1.
180 (19973)6 3
Detailed modeling of three-dimensional lida, M., see Takano, K.
180 (1997) 61
chemical vapor deposition 180 (1997) 670 lida, T., see Nakamura, K.
180 (19973)6 3
Espezel, M., see Corre, S. 180 (1997) 604 lino, E., see Takano, K.
180 (19975)4 3
Imaishi, N., see Tsukada, T.
Fainberg, J., H.-J. Leister and G. Miller, Nu- Imaishi, N., T. Sato, M. Kimura and Y.
merical simulation of the LEC-growth of Akiyama, Micro/macro modeling of CVD
GaAs crystals with account of high-pres- synthesis 180 (1997) 680
sure gas convection 180 (1997) 517 Irvine, S.J.C., see Ahmed, M.U. 180 (1997) 167
716 Author index
Ishii, M., S. Iwai, H. Kawata, T. Ueki and Y. Kubota, T., see Nakamura, K. 180 (1997) 61
Aoyagi, Atomic layer epitaxy of AIP and Kuriakose, A.K., see Maffei, N. 180 (1997) 105
its application to X-ray multilayer mirror 180 (1997) 15
Iwai, S., see Ishii, M. 180 (1997) 15 Lambert, U., see Dornberger, E. 180 (1997) 343
Lambert, U., see Vanhellemont, J. 180 (1997) 353
Lan, C.W. and C.R. Song, Growth of benzil
Jacmin, P., see Olivari, E. 180 (1997) 627
crystals by vertical dynamic gradient freeze
Jacobs, M.H.G., see van Braak, J. 180 (1997) 315
technique in a transparent furnace 180 (1997) 127
Jarvinen, J., R. Nieminen and T. Tiihonen,
Lan, C.W. and M.C. Liang, Modulating
Time-dependent simulation of Czochralski
dopant segregation in floating-zone silicon
silicon crystal growth 180 (19974)6 8
growth in magnetic fields using rotation 180 (19973)8 1
Jeon, Gyung-Nam, see Nam, Sungun 180 (1997) 47
Lan, C.W., see Liang, M.C. 180 (19975)8 7
Ji, Y., see Park, B.M. 180 (19971)0 1
Larson, Jr., D.J., see Zheng, L.L. 180 (19972)9 3
Jin Sizhao, see Chen Zhiwen 180 (19972)8 0
Lee, C.R., see Leem, J.Y. 180 (1997) 40
Jones, A.C., see Ahmed, M.U. 180 (19971)6 7
Lee, Choon-Ho, see Nam, Sungun 180 (1997) 47
Jung, T., see Weimann, H. 180 (19975)6 0
Lee, D.K., see Leem, J.Y. 180 (1997) 40
Jurgensen, H., see Bergunde, T. 180 (19976)6 0
Lee, J.-W., see Kim, S.H. 180 (19971)9 8
Lee, Ki-Seon, see Nam, Sungun 180 (1997) 47
Lee, M. and R.S. Feigelson, Growth of epi-
Kadinski, L., see Bergunde, T. 180 (1997) 660
taxial strontium barium niobate thin films
Kakimoto, K., M. Eguchi and H. Ozoe, Use of
by solid source metal-organic chemical va-
an inhomogeneous magnetic field for sili-
por deposition 180 (1997) 220
con crystal growth 180 (1997) 442
Lee, Y.-S. and Ch.-H. Chun, Experiments on
Kakinoki, K., see Tsukada, T. 180 (1997) 543
the oscillatory convection of low Prandtl
Kawata, H., see Ishii, M. 180 (1997) 15
number liquid in Czochralski configura-
Kim, C.S., see Leem, J.Y. 180 (1997) 40
tion for crystal growth with cusp magnetic
Kim, Do Hyun, see Chung, Won Young 180 (1997) 691
field 180 (1997) 477
Kim, S.H., Y.S. Park, W.S. Yun and J.-W. Lee,
Enhancement of diamond film uniformity Leem, J.Y., C.R. Lee, C.S. Kim, Y.K. Cho, S.K.
Noh, J.S. Son, D.K. Lee and I.H. Bae,
in a biased microwave-plasma-enhanced
Molecular beam epitaxial growth and
chemical vapor deposition system 180 (1997) 198
properties of high-quality ZnS,Se,_, on
Kim, Seungtae, see Choi, Jung-Il 180 (1997) 305
180 (1997) 40
GaAs(0 0 1) substrate
Kimura, M., see Takano, K. 180 (1997) 363
180 (19974)6 1
Kimura, M., see Imaishi, N. 180 (1997) 680 Leister, H.-J., see Dornberger, E.
180 (19975)1 7
Kimura, S. and K. Terashima, A review of Leister, H.-J., see Fainberg, J.
Lenhoff, A.M., P.E. Pjura, J.G. Dilmore and
measurement of thermophysical properties
of silicon melt 180 (1997) 323 T.S. Godlewski, Jr., Ultracentrifugal crys-
tallization of proteins: transport-kinetic
Kimura, T., see Takemi, M. 180 (1997) 1
modelling, and experimental behavior of
Kissinger, G., see Vanhellemont, J. 180 (1997) 353
180 (19971)1 3
catalase
Kitamura, K., see Park, B.M. 180 (1997) 101
180 (19972)8 0
Li Fanging, see Chen Zhiwen
Kobayashi, M., T. Tsukada and M. Hozawa,
180 (1997) 27
Effect of internal radiative heat transfer on Li, X.B., see Yoon, S.F.
180 (19973)8 1
the convection in CZ oxide melt 180 (1997) 157 Liang, M.C., see Lan, C.W.
Kobayashi, S., Mathematical modeling of Liang, M.C. and C.W. Lan, Three-dimen-
sional thermocapillary and buoyancy con-
grown-in defects formation in Czochralski
silicon 180 (1997) 334 vections and interface shape in horizontal
Bridgman crystal growth 180 (1997) 587
Kolesnikova, E.N., Yu.A. Polovko, VS.
Yuferev and A.I. Zhmakin, Influence of Lizée, A., see Chen, G. 180 (1997) 638
Coriolis force on thermal convection and Lopez, D.O., see van Braak, J. 180 (1997) 315
Lyubimoy, D.V., T.P. Lyubimova, S. Meradji
impurity segregation during crystal
and B. Roux, Vibrational control of crystal
growth under microgravity 180 (19975)7 8
Kong Meiying, see Wang Xiaoliang 180 (1997) 22 growth from liquid phase 180 (1997) 648
Kong, M.Y, see Yoon, S.F. 180 (1997) 27 Lyubimova, T.P., see Lyubimov, D.V. 180 (1997) 648
Kosenko, A.V., see Balitsky, D.V. 180 (19972)1 2
Kotooka, T., see Nakamura, K. 180 (1997) 61 Ma, N. and J.S. Walker, Validation of strong
Koyama, H.S., see Choi, Jung-II 180 (19973)0 5 magnetic field asymptotic models for
Krimins, J., see Abricka, M. 180 (19973)8 8 dopant transport during semiconductor
Kubler, L., see Simon, L. 180 (19971)8 5 crystal growth 180 (1997) 401
Author index 717
Maffei, N., D.H.H. Quon, J. Aota, A.K. Pangborn, M.F., see Markgraf, S.A. 180 (1997) 81
Kuriakose and M.Z. Saghir, Float-zone Park, B.M., K. Kitamura, K. Terabe, Y.
crystal growth of Bi,;,GeO, in a micro- Furukawa, Y. Ji and E. Suzuki, Mechan-
gravity environment 180 (1997) 105 ical twinning in stoichiometric lithium nio-
Makarov, Yu.N., see Bergunde, T. 180 (1997) 660 bate single crystal 180 (19971)0 1
Makita, K., see Tsuji, M. 180 (1997) 9 Park, Y.S., see Kim, S.H. 180 (19971)9 8
Markgraf, S.A., M.F. Pangborn and R. Dieck- Pjura, P.E., see Lenhoff, A.M. 180 (19971)1 3
mann, Influence of different divalent co- Polovko, Yu.A., see Kolesnikova, E.N. 180 (19975)7 8
dopants on the Cr** content of Cr-doped Prasad, V., see Zou, Y.F. 180 (19975)2 4
Y3Al1;O;> 180 (1997) 81 Prasad, V., see Chui, W.K. 180 (19975)3 4
Meradji, S., see Lyubimov, D.V. 180 (1997) 648 Pushcharovsky, D.Yu., see Balitsky, D.V. 180 (19972)1 2
Mihashi, Y., see Takemi, M. 180 (1997) 1
Mishurnyi, V.A., F. de Anda, A.Yu. Gor- Qi, X., H.G. Gallagher, T.P.J. Han and B.
batchev, V.I. Vasil’ev and N.N. Faleev, Henderson, Modified Czochralski growth
InGaAsSb growth from Sb-rich solutions 180 (1997) 34 and characterization of RETiNbO, crys-
Montgomery, K.E., see Zaitseva, N.P. 180 (19972)5 5 tals 180 (1997) 73
180 (19974)2 2
Moreau, R., see Davoust, L. Quon, D.H.H., see Maffei, N. 180 (1997) 105
Muiznieks, A., see Mithlbauer, A. 180 (19973)7 2
Muhlbauer, A., A. Muiznieks and J. Virbulis,
Rejmankova, P., J. Baruchel, P. Villeval and
Analysis of the dopant segregation effects
C. Saunal, Characterization of large
at the floating zone growth of large silicon
KTiOPO, flux grown crystals by synchro-
crystals 180 (19973)7 2
tron radiation topography 180 (1997) 85
Miller, G., see Dornberger, E. 180 (19974)6 1
Rhee, Jongkwang, see Nam, Sungun 180 (1997) 47
Miller, G., see Fainberg, J. 180 (19975)1 7
Richardson, M., see Zaitseva, N.P. 180 (19972)5 5
180 (19975)6 0
Muller, G., see Weimann, H.
Roux, B., see Tatarchenko, V.A. 180 (19976)1 5
Roux, B., see Chen, G. 180 (19976)3 8
Nabot, J.Ph., see Tatarchenko, V.A. 180 (1997) 615 Roux, B., see Lyubimov, D.V. 180 (19976)4 8
Nabot, J.Ph., see Santailler, J.L. 180 (1997) 698 Rushworth, S.A., see Ahmed, M.U. 180 (19971)6 7
Nakamura, K., T. Saishoji, T. Kubota, T. lida,
Y. Shimanuki, T. Kotooka and_ J.
Sabhapathy, P., see Barz, R.U. 180 (19975)6 6
Tomioka, Formation process of grown-in
Saghir, M.Z., see Maffei, N. 180 (19971)0 5
defects in Czochralski grown silicon crys-
Saishoji, T., see Nakamura, K. 180 (1997) 61
tals 180 (1997) 61
Saito, N., see Tanaka, M. 180 (19974)8 7
180 (19973)0 5
Nakano, A., see Choi, Jung-I]
Salcudean, M., see Barz, R.U. 180 (19975)6 6
Nam, Sungun, Jongkwang Rhee, Byungsung
Salud, J., see van Braak, J. 180 (19973)1 5
O, Ki-Seon Lee, Yong Dae Choi, Gyung-
Sangwal, K., J. Servat, F. Sanz and J. Torrent-
Nam Jeon and Choon-Ho Lee, Character-
Burgués, AFM study of etching of cleaved
ization and growth of high quality ZnTe
{100} faces of L-arginine phosphate
180 (1997) 47
epilayers by hot-wall epitaxy
monohydrate single crystals. I. Dislocation
180 (19974)6 8
Nieminen, R., see Jarvinen, J.
etch pits and step bunching 180 (1997) 263
180 (1997) 40
Noh, S.K., see Leem, J.Y.
Sangwal, K., J. Torrent-Burgués, F. Sanz and
J. Servat, AFM study of etching of cleaved
O, Byungsung, see Nam, Sungun 180 (1997) 47 {100} faces of L-arginine phosphate
Olivari, E., P. Jacmin, N. van den Bogaert, V. monohydrate single crystals. I]. Two-di-
Wertz and F. Dupret, The use of a reduced mensional nucleation, formation of spiral
model for on-line simulations of the elevations and decoration of dissolution
Czochralski growth of single crystals 180 (1997) 627 layers 180 (19972)7 4
Onodera, H., see Bae, S.I. 180 (1997) 94 Santailler, J.L., T. Duffar, F. Théodore, P.
Oonk, H.A.J., see van Braak, J. 180 (1997) 315 Boiton, C. Barat, B. Angelier, N.
Ozoe, H., see Kakimoto, K. 180 (1997) 442 Giacometti, P. Dusserre and J.P. Nabot,
Some features of two commercial soft-
Palumbo-Romand, V., M. Ferriol, M.T. Co- wares for the modeling of bulk crystal
hen-Adad and N. Clavaguera, Nucleation growth processes 180 (1997) 698
and crystallization phenomena in stoichio- Sanz, F., see Sangwal, K. 180 (1997) 263
metric monomethylhydrazinewater mix- Sanz, F., see Sangwal, K. 180 (1997) 274
tures 180 (1997) 238 Sato, T., see Imaishi, N. 180 (1997) 680
Palumbo-Romand, V., see Clavaguera, N. 180 (1997) 248 Saunal, C., see Reymankova, P. 180 (1997) 85
718 Author index
Schmitt, Ch., see Dornberger, E. 180 (19974)6 1 Tangerman, F.M., see Chui, W.K. 180 (1997) 534
Schmitt, S., see Dornberger, E. 180 (19974)6 1 Tanguy, P.A., see Davoust, L. 180 (1997) 422
Schmitz, D., see Bergunde, T. 180 (19976)6 0 Tatarchenko, E.V., see Tatarchenko, V.A. 180 (1997) 615
180 (19971)8 5
Schott, M., see Simon, L. Tatarchenko, V.A., V.S. Uspenski, E.V. Tatar-
180 (19974)6 1
Seidl, A., see Dornberger, E. chenko, J.Ph. Nabot, T. Duffar and B.
Senkader, S., see Vanhellemont, J. 180 (19973)5 3 Roux, Theoretical model of crystal growth
Servat, J., see Sangwal, K. 180 (19972)6 3 shaping process 180 (19976)1 5
180 (19972)7 4 180 (19971)0 1
Servat, J., see Sangwal, K. Terabe, K., see Park, B.M.
180 (19975)1 0 180 (19973)2 3
Shephard, M.S., see Givoli, D. Terashima, K., see Kimura, S.
180 (1997) 1 180 (19976)9 8
Shiba, T., see Takemi, M. Théodore, F., see Santailler, J.L.
180 (1997) 1 180 (19974)6 8
Shibata, K., see Takemi, M. Tiihonen, T., see Jarvinen, J.
180 (1997) 94 180 (1997) 61
Shimamura, K., see Bae, S.I. Tomioka, J., see Nakamura, K.
180 (19975)4 3 180 (19974)6 1
Shimamura, K., see Tsukada, T. Tomzig, E., see Dornberger, E.
180 (1997) 61 180 (19972)6 3
Shimanuki, Y., see Nakamura, K. Torrent-Burgues, J., see Sangwal, K.
180 (19972)7 4
Simon, L., J. Fauré, L. Kubler and M. Schott, Torrent-Burgués, J., see Sangwal, K.
180 (19974)3 3
Stress driven spontaneous mesoscopic Touihri, R., see Ben Hadid, H.
180 (19973)5 3
alloy decomposition and ordering along Trauwaert, M.-A., see Vanhellemont, J.
step bunches during epitaxial Si, _,C, Tsuji, M., K. Makita, I. Watanabe and K.
alloy growth on Si 180 (19971)8 5 Taguchi, High-crystallinity MOVPE-
Smith, L.M., see Ahmed, M.U. 180 (19971)6 7 grown sawtooth-bandgap In, - ,- ,Ga,Al,As
Smooke, M.D., see Ern, A. 180 (19976)7 0 for use in staircase avalanche photodiodes 180 (1997) 9
180 (1997) 40 180 (19971)5 7
Son, J.S., see Leem, J.Y. Tsukada, T., see Kobayashi, M.
180 (19971)2 7
Song, C.R., see Lan, C.W. Tsukada, T., K. Kakinoki, M. Hozawa, N.
180 (19971)6 7
Stafford, A., see Ahmed, M.U. Imaishi, K. Shimamura and T. Fukuda,
180 (19976)6 0
Strauch, G., see Bergunde, T. Numerical and experimental studies on
180 (19973)4 3 180 (19975)4 3
Suhren, M., see Dornberger, E. crack formation in LiNbO; single crystal
180 (1997) 22
Sun Dianzhao, see Wang Xiaoliang
180 (19973)0 5
Sung, Hyung Jin, see Choi, Jung-I1
180 (19971)0 1 Ueki, T., see Ishii, M. 180 (1997) 15
Suzuki, E., see Park, B.M.
Sweegers, A.J.R., see van den Berg, E.P.G. 180 (19972)8 4 Uspenski, V.S., see Tatarchenko, V.A. 180 (1997) 615
Sze, P.W., N.F. Wang, M.P. Houng, Y.H.
Wang, J.S. Hwang, W.Y. Chou, Y.T.
Van Braak, J.. D.O. Lopez, J. Salud, J.LI.
Cherng, C.H. Wang and C.D. Chiang, Ef-
Tamarit, M.H.G. Jacobs and H.A.J. Oonk,
fects of substrate preheating for the growth
The system carbon tetrabromide + hexa-
of Zn,Cd, -,Te/(100)GaAs by MOCVD 180 (1997) 177
chloroethane analysis of the plastic—cry-
stalline +- liquid equilibrium 180 (1997) 315
180 (1997) 9
Taguchi, K., see Tsuji, M. Van den Berg, E.P.G., A.J.R. Sweegers, M.A.
180 (1997) 1
Takamiya, S., see Takemi, M. Verheijen and W.J.P. van Enckevort, In
Takano, K., M. lida, E. lino, M. Kimura and situ topography of the (200) face of €-
H. Yamagishi, Relationship between caprolactam growing from the vapour
180 (19972)8 4
grown-in defects and thermal history dur- phase
180 (19974)5 0
ing CZ Si crystal growth 180 (1997) 363 Van den Bogaert, N., see Assaker, R.
180 (19976)2 7
Takei, H., see Tanaka, T. 180 (1997) 206 Van den Bogaert, N., see Olivari, E.
Takemi, M., T. Kimura, T. Shiba, K. Shibata, Van Enckevort, W.J.P., see van den Berg,
Y. Mihashi, S. Takamiya and M. Aiga, E.P.G. 180 (1997) 284
Metalorganic vapor-phase epitaxial re- Vanhellemont, J., S. Senkader, G. Kissinger,
growth of InP on reactive ion-etched mesa V. Higgs, M.-A. Trauwaert, D. Graf, U.
structures for p-substrate buried hetero- Lambert and P. Wagner, Measurement,
structure laser application 180 (1997) 1 modelling and simulation of defects in as-
Tamarit, J.LI., see van Braak, J. 180 (1997) 315 grown Czochralski silicon 180 (19973)5 3
Tan Shun, see Chen Zhiwen 180 (1997) 280 Vasil’ev, M.G., see Yuferev, V.S. 180 (19975)5 1
Tanaka, M., M. Hasebe and N. Saito, Pattern Vasil’ev, V.I., see Mishurnyi, V.A. 180 (1997) 34
transition of temperature distribution at Verheijen, M.A., see van den Berg, E.P.G. 180 (19972)8 4
180 (19974)8 7
Czochralski silicon melt surface Villeval, P., see Rejmankova, P. 180 (1997) 85
Tanaka, T. and H. Takei, Growth of MgSiO; Virbulis, J., see Miihlbauer, A. 180 (19973)7 2
orthoenstatite single crystals by the top- Vital, R.L., see Zaitseva, N.P. 180 (19972)5 5
seeded solution growth (TSSG) method 180 (1997) 206 Von Ammon, W., see Dornberger, E. 180 (19973)4 3
Author index 719
180 (19975)7 8
Wagner, P., see Dornberger, E. 180 (19973)4 3 Yuferev, V.S., see Kolesnikova, E.N.
180 (19976)6 0
Wagner, P., see Vanhellemont, J. 180 (19973)5 3 Yuferev, V.S., see Bergunde, T.
180 (19971)9 8
Walker, J.S., see Ma, N. 180 (19974)0 1 Yun, W.S., see Kim, S.H.
Wang, C.H., see Sze, P.W. 180 (19971)7 7
Wang, G.-X., see Zou, Y.F. 180 (19975)2 4 Zaccaro, J., B. Capelle and A. Ibanez, Crystal
Wang Jian, see Chen Zhiwen 180 (19972)8 0 growth of hybrid nonlinear optical mater-
Wang, N.F., see Sze, P.W. 180 (19971)7 7 ials: 2-amino-5-nitropyridinium dihyd-
Wang Xiaoliang, Sun Dianzhao, Kong Mei- rogenphosphate and dihydrogenarsenate 180 (1997) 229
ying, Hou Xun and Zeng Yiping, Study of Zaitseva, N.P., J.J. De Yoreo, M.R. Dehaven,
GSMBE growth and characteristics of R.L. Vital, K.E. Montgomery, M. Richar-
high-quality strained Ing 63;Gao.37As/InP dson and L.J. Atherton, Rapid growth of
180 (19972)5 5
quantum wells 180 (1997) 22 large-scale (40-55 cm) KH,PO, crystals
180 (1997) 22
Wang, Y.H., see Sze, P.W. 180 (1997) 177 Zeng Yiping, see Wang Xiaoliang
180 (19975)2 4
Watanabe, I., see Tsuji, M. 180 (1997) 9 Zhang, H., see Zou, Y.F.
180 (19975)3 4
Weimann, H., J. Amon, Th. Jung and G. Miil- Zhang, H., see Chui, W.K.
180 (19972)8 0
ler, Numerical simulation of the growth of Zhang Shuyuan, see Chen Zhiwen
180 (19972)8 0
2” diameter GaAs crystals by the vertical Zhang Yuheng, see Chen Zhiwen
gradient freeze technique 180 (1997) 560 Zheng, L.L. and D.J. Larson, Jr., Thermoelec-
Wertz, V., see Olivari, E. 180 (1997) 627 tric effects on interface demarcation and
Wunderwald, U., see Barz, R.U. 180 (1997) 410 directional solidification of bismuth 180 (1997) 293
Zhmakin, A.I., see Kolesnikova, E.N. 180 (1997) 578
Yamagishi, H., see Takano, K. 180 (1997) 363 Zhou, Y. and J.J. Derby, Three-dimensional
Yoon, S.F., X.B. Li and M.Y Kong, Some computations of solution hydrodynamics
properties of gallium nitride films grown during the growth of potassium dihydro-
on (0 00 1) oriented sapphire substrates by gen phosphate. I. Spin up and steady rota-
gas source molecular beam epitaxy 180 (1997) 27 tion 180 (1997) 497
Yuferev, V.S. and M.G. Vasil’ev, New Zou, Y.F., G.-X. Wang, H. Zhang, V. Prasad
approach to simulation of radiative-con- and D.F. Bliss, Macro-segregation, dy-
ductive heat transfer in semi-transparent namics of interface and stresses in high
180 (19975)2 4
crystals being pulled from a melt 180 (1997) 551 pressure LEC grown crystals
SS
JOURNAL OF CRYSTAL
= — GROWTH
4
ELSEVIER Journal of Crystal Growth 180 (1997) 720-721
Subject index
Apparatus — reactive ion 1
— for dynamic vertical gradient freeze 127 Eutectic growth
— of faceted lamellar structures 315
Characterization
— by various methods Hydrodynamics, see Convection
— — of silicon melt 323
Computer simulation Kinetics
of composition profile 40 of different faces of germanium oxide 212
of Czochralski growth 157, 450, 461, 534, 627 of doping 167
of dopant concentration in silicon 343, 372, 381 of growth 113, 136, 212, 238, 284, 334, 604, 680
of global model of liquid encapsulated Czochralski 517, 524 — of interface control 280, 680
of interface demarcation 293 of nucleation 61, 113, 136, 238, 255, 274
of liquid encapsulated Czochralski melt flows of indium
phosphide 510 Lasers, see Device characterization
of melt convection 442 Lasers, crystals for
of metalorganic vapor phase epitaxy of III-V — chromium-doped YAG 81
compounds 660 — harmonic generation 255
of silicon melt flow 487 — lithium niobate 94, 101
of software for modeling 698 — nonlinear optics 229
of thermocapillary convection 660 — rare-earth titanium niobate 73
of time dependent Czochralski 468
of void nucleation 353 Melt growth technique
Constitutional supercooling by Bridgman-Stockbarger method
— of benzil 127 — of bismuth 293
Convection 127, 157, 372, 381, 410, 433, 442, 450, 477, 487, — theory
497, 517, 524, 566, 578, 587, 597, 638, 648 — — of buoyancy driven convection 422, 433
— — of dopant transport in strong magnetic field 401
Device characterization by Czochralski method
— electronic materials 40 — of gallium arsenide 517
— lasers 1 - — of indium phosphide 510
— quantum wells 22 — of rare-earth titanium niobate 73
— with saw tooth bandgap 9 — of silicon 334, 343, 353, 363, 442, 450, 461, 477
Diffusional control — theory
— of Coriolis convection 578 — — of flow mode transitions 305
Dissolution — — of global simulation 517, 524
— of surfaces 263, 274 - — — of internal radiation 157, 551
by floating zone method
Electronic materials, see Device characterization — of bismuth germanate 105
Epitaxy, see Thin film growth — of chromium-doped YAG 81
Etching — theory of vibrations controlling growth 648
— chemical 40 by horizontal Bridgman 587
Subject index
by vertical gradient freeze method 127, 560 — by ultracentrifugation
by zone melting ~ — of proteins 113
of silicon 372, 381 Statistical mechanics, molecular theory
— theory — of surface angle transition 136
— — of dopant distribution 94 Stefan problem or moving boundary problem
— of shaped crystal growth 615 — of horizontal Bridgman 587
Microgravity, growth under — of melt 388
— of bismuth germanate 105 Superlattices, multilayers
— theory of Coriolis forces 578 — of silicon/silicon carbon 185
— vibrations 648 — of III-V compounds 22
Morphological stability Surface energy, determination
— of germanium oxide 212 — of angle transition 136
Surface structure
Nucleation — of etched surfaces 263
— of carbon-rich aggregates 185 — of silicon (211) 54
— of diamond 198
— of grown-in defects in silicon 334, 353, 363 Thin film growth
— of vacancy clusters 61 — by atomic layer molecular beam epitaxy
Numbers — of aluminum phosphide 15
Bond 615 — by gas source molecular beam epitaxy
Damkohler 113 — of gallium nitride 27
Grashof 157, 388, 433, 450, 477, 524, 534, 543, 578, 638 by hot wall epitaxy
Hartman 401, 433, 477 — of zinc telluride 47
Marangoni 534 by liquid phase epitaxy
Peclet 401, 578 — of indium gallium arsenide antimonide 34
Prandtl 388 by molecular beam epitaxy
Rayleigh 305, 477, 597 — of indium phosphide 22
Reynolds 450, 497, 638 — of zinc selenide 40
Schmidt 597 — of zinc sulphide selenide 40
Taylor 388, 410 by vapor phase epitaxy
— through chemical vapor deposition
Phase diagram — theory of growth 670, 680
— of carbontetrabromide—hexachloroethane 315 through metalorganic chemical vapor deposition
— of rare-earth titanium niobate 73 — of cadmium zinc telluride 177
of copper 691
Quantum wells, see Device characterization of indium gallium aluminum arsenide 9
of indium phosphide 1
Solution growth technique of silicon/silicon carbon 185
— by chemical liquid homogeneous precipitation of strontium barium niobate 220
— — of gamma-manganate 280 - of yttria 680
— by flux method of zinc selenide 167
— — of potassium titanyl 85 of zirconia 680
by low temperature method theory of growth 660
— of germanium oxide 212 through metalorganic chemical vapor deposition,
— of L-arginine phosphate monohydrate 263, 274 photo-assisted
— of monomethylhydrazin 238, 248 — — of zinc selenide 167
— of potassium dihydrogen phosphate 255, 497 — through plasma-enhanced chemical vapor deposition 198
- — of 2-amino-5-nitropyridinium dihydrogenphosphate
and dihydrogenarsenate 229 Vapor growth technique
— by top seeded solution growth — by chemical transport
— — of magnesium silicate (ortoenstatite) 206 — — of epsilon-caprolactam 284
— by traveling heater method Vapor-—liquid-solid growth
— — of cadmium telluride 566 — of germanium oxide 212