Journal of Crystal Growth 1997: Vol 173 Index

9 Pages·1997·2.4 MB·English

CRYSTAL
JOURNALO F
GROWTH
ELSEVIER Journal of Crystal Growth 173 (1997) 599-604
Author index
Abe, S., K. Masumoto and K. Suto, Growth Chen, Liang-yao, see Chen, Xi-ying 173 (1997) 51
and characterization of Pb, -, (Ca; -,Sr,),S Chen, N., H. He, Y. Wang and L. Lin,
thin films prepared by hot wall epitaxy 173 (1997) 104 Stoichiometric defects in semi-insulating
Akai, S., see Hashio, K. 173 (1997) 33 GaAs 173 (1997) 325
Akazawa, H., Evaluation of thin Si films grown Chen, T.-C., H.-C. Wu and C.-I. Weng, The
on Ge (100) by synchrotron-radiation-ex- effect of interface shape on anisotropic ther-
cited atomic layer epitaxy and chemical va- mal stress of bulk single crystal during
por deposition from Si,H, 173 (19973)4 3 Czochralski growth 173 (1997) 367
Akimoto, K., see Cho, S.H. 173 (19972)6 0 Chen, Xi-ying, Xiao-yuan Hou, Xian-an Cao,
Aoyagi, Y., see Lee J.-S. 173 (1997) 27 Xun-min Ding, Liang-yao-yao Chen, Guo-
Arora, B.M., see Gadkari, D.B. 173 (19975)8 5 qing Zhao and Xun Wang, Gallium sulfide
Asahi, H., see Yamamoto, K. 173 (1997) 21 thin film grown on GaAs(100) by micro-
Astier, J.P., see Lafont, S. 173 (19971)3 2 wave glow discharge 173 (1997) 51
Ataka, M., E. Katoh and N.I. Wakayama, Cheng, T.S., see Novikov, S.V. 173 (1997) 1
Magnetic orientation as a tool to study the Cheng, W.-C. and P. Wynblatt, Equilibrium
initial stage of crystallization of lysozyme 173 (1997) 592 form of Pb—Bi-Ni alloy crystals 173 (1997) 513
Au, Wing kei, M.J. Kappers and R.F. Hicks, Chernushich, A.P., see Kuznetsov, P.I. 173 (1997) 57
Evaluation of a zero-discharge reactor for Chew-Walter, A., see Hase, A. 173 (1997) 14
the chemical vapor deposition of mercury Cho, S.H., K. Hata, T. Maruyama and K.
telluride 173 (1997) 386 Akimoto, Optical and structural properties
Avrutin, E.A., see Elyukhin, V.A. 173 (1997) 69 of GaN films grown on c-plane Al,O; by
electron cyclotron resonance molecular
Bachem, K.H., see Davidson, B.R. 173 (19972)3 5 beam epitaxy 173 (1997) 260
Beaumont, B., see Vennegues, P. 173 (19972)4 9 Choi, I.-H., see Kuroda, K. 173 (1997) 73
Bennema, P., see Strom, C.S. 173 (19971)5 0 Chong, T.-C., see Xu, X.-W. 173 (1997) 194
Bennema, P., see Strom, C.S. 173 (19971)5 9
Cockayne, B., M.J. Crosbie, N.A. Smith and
Bergmann, R.B., see Kiihnle, J. 173 (1997) 62
I.R. Harris, Precipitate identification in Ti-
Boistelle, R., see Lafont, S. 173 (19971)3 2 doped YAIO; single crystals 173 (1997) 456
Boulon, G., see Ferriol, M. 173 (19972)2 6 Cohen-Adad, M.T., see Ferriol, M. 173 (1997) 226
Brenier, A., see Ferriol, M. 173 (19972)2 6 Cook, J., see Sloan, J. 173 (1997) 81
Briceno-Valero, J.M., see Garcia, V.J. 173 (19972)2 2
Cooley, W.T., see Kaspi, R. 173 (1997) 5
Bushnell, L.T., see LaCombe, J.C. 173 (19971)6 7 Coriell, S.R., see Sekerka, R.F. 173 (1997) 597
Cao, Xian-an, see Chen, Xi-ying 173 (1997) 51 Crosbie, M.J., see Cockayne, B. 173 (1997) 456
Carvalho, J.F., A.C. Hernandes, F.D. Nunes, Cui, F.Z., see Ma, C.L. 173 (1997) 141
L.B.O.A. de Moraes, L. Misoguti and S.C. Curreri, P.A., see Sen, S. 173 (1997) 574
Zilio, LAP single crystal growth free of
microorganisms by an accurately control- Davidson, B.R., R.C. Newman, T. Kaneko, O.
led solvent evaporation technique 173 (1997) 487 Naji and K.H. Bachem, Erratum to “The
Catalina, A., see Sen, S. 173 (1997) 574 rotation of the alignment by 90° of
Chait, A., see Yao, M. 173 (1997) 467 (H+(C,,)2) complexes resulting from metal-
Chani, V.I, K. Shimamura, S. Endo and organic molecular beam epitaxy or metal-
T. Fukuda, Substitution of Ti** with organic vapor phase epitaxy growth on
Nb**—-M?* (M=Al, Cr, Ga, Fe, In) in GaAs(00 1) using trimethylgallium”. [J.
crystals of KTiOAsO, 173 (1997) 117 Crystal Growth 164 (1996) 396] 173 (1997) 235
600 Author index /J ournal of Crystal Growth 173 (1997) 599-604
De Carvalho, M.M.G., see de Oliveira, C.E.M. 173 (1997) 214 Solid solutions in the dilute magnetic
De Groh III, H.C., see Yeoh, G.H. 173 (1997) 492 semiconductor Mn,Zn, _,S 173 (1997) 222
De Moraes, L.B.O.A., see Carvalho, J.F. 173 (1997) 487 Gartner, F., see Eckler, K. 173 (1997) 528
De Oliveira, C.E.M., M.M.G. de Carvalho and Ge, C.Z., see Hu, X.B. 173 (1997) 460
C.R. Miskys, Growth of InP by LEC using Gibart, P., see Vennegues, P. 173 (1997) 249
glassy carbon crucibles 173 (19972)1 4 Gijbels, R., see Volkov, V.V. 173 (1997) 285
De Vahl Davis, G., see Yeoh, G.H. 173 (19974)9 2 Giriat, W., see Garcia, V.J. 173 (1997) 222
Debnam, W.J., see Yao, M. 173 (19974)6 7 Glicksman, M.E., see LaCombe, J.C. 173 (1997) 167
Dhindaw, B.K., see Sen, S. 173 (19975)7 4 Gonda, S., see Yamamoto, K. 173 (1997) 21
Diéguez, E., see Marin, C. 173 (19972)7 1 Gonda, T. and S. Nakahara, Dendritic ice
Ding, Xun-min, see Chen, Xi-ying 173 (1997) 51 crystals with faceted tip growing from the
Dou, S.X., see Wang, X.L. 173 (19973)8 0 vapor phase 173 (1997) 189
Drigo, A.V., see Leo, G. 173 (19972)7 7 Green, M.L.H., see Sloan, J. 173 (1997) 81
Duffar, T., see Marin, C. 173 (19972)7 1 Greer, A.L., see Eckler, K. 173 (1997) 528
Dusserre, P., see Marin, C. 173 (19972)7 1
Dutta, P.S., see Marin, C. 173 (19972)7 1 Harada, T. and H. Ohkoshi, Influence of
MgO(1 0 0) substrate surfaces on epitaxial
Eckler, K., A.F. Norman, F. Gartner, A.L. growth of Ti films 173 (1997) 109
Greer and D.M. Herlach, Microstructures Harris, I.R., see Cockayne, B. 173 (1997) 456
of dilute Ni-C alloys obtained from under- Harrison, I., see Novikov, S.V. 173 (1997) 1
cooled droplets 173 (1997) 528 Hase, A., A. Chew-Walter and H. Kiinzel,
Elyukhin, V.A., E.L. Portnoi, E.A. Avrutin and Barrier composition dependence of the
J.H. Marsh, Miscibility gap of ternary emission properties of AlGaInAs/GaInAs
alloys of binary compounds with zinc- quantum wells grown by molecular beam
blende and wurtzite structures using the epitaxy 173 (1997) 14
cluster variation method 173 (1997) 69 Hasegawa, M., see Tanaka, M. 173 (1997) 440
Endo, S., see Chani, V.I. 173 (1997) 117 Hashio, K., S. Sawada, M. Tatsumi, K. Fujita
Evans, K.R., see Kaspi, R. 173: (i997). 5 and §S. Akai, Low dislocation density
Si-doped GaAs single crystal grown by
the vapor-pressure-controlled Czochralski
Fabietti, L.M. and R. Trivedi, In situ observa- method 173 (1997) 33
tions of stress-induced defect formation at Hata, K., see Cho, S.H. 173 (1997) 260
the solid—liquid interface 173 (1997) 503 He, H., see Chen, N. 173 (1997) 325
Ferauge, C., see Volkov, V.V. 173 (1997) 285 Heesom, J.R., see Sloan, J. 173 (1997) 81
Fernandez, J.M., see Xie, M.-H. 173 (1997) 336 Herden, A. and R. Lacmann, The crystalliza-
Ferriol, M., G. Foulon, A. Brenier, M.T. Co- tion of potassium nitrate. I. Etch pit density
hen-Adad and G. Boulon, Laser heated and microhardness of potassium nitrate in
pedestal growth of pure and Nd**-doped comparison with some other ionic crystals 173 (1997) 481
potassium lithium niobate single-crystal Herlach, D.M., see Eckler, K. 173 (1997) 528
fibers 173 (1997) 226 Hernandes, A.C., see Carvalho, J.F. 173 (1997) 487
Flynn, D., see Sun, Z. 173 (1997) 402 Hicks, R.F., see Au, Wing kei 173 (1997) 386
Foulon, G., see Ferriol, M. 173 (1997) 226 Hong Ouyang and Wei Shyy, Numerical simu-
Foxon, C.T., see Novikov, S.V. Lis Gan 1 lation of CdTe vertical Bridgman growth 173 (1997) 352
Frazier, D.O., R.J. Hung, M.S. Paley and Y.T. Horvat, J., see Wang, X.L. 173 (1997) 380
Long, Effects of convection during the Hou, Xiao-yuan, see Chen, Xi-ying 173 (1997) 51
photodeposition of polydiacetylene thin Hu, X.B., S.S. Jiang, X.R. Huang, W.J. Liu, C.Z.
films 173 (1997) 172 Ge, J.Y. Wang, H.F. Pan, J.H. Jiang
Fripp, A.L., see Yao, M. 173 (1997) 467 and Z.G. Wang, The growth defects in
Fujita, K., see Hashio, K. 173 (1997) 33 self-frequency-doubling laser crystal
Fukuda, T., see Chani, V.I. 173 (1997) 117 Nd,Y ;~ ,Al;(BO3)4 173 (1997) 460
Huang, X.R., see Hu, X.B. 173 (1997) 460
Gadkari, D.B., K.B. Lal, A.P. Shah and B.M. Hung, R.J., see Frazier, D.O. 173 (1997) 172
Arora, Growth of high mobility InSb Hutchison, J.L., see Sloan, J. 173 (1997) 81
crystals 173 (1997) 585
Gao, C., see Li, S. 173 (1997) 321 Igarashi, O., Correlation of reflection electron
Garcia, V.J., J.M. Bricefio-Valero, L. Martinez, diffraction patterns, Raman spectra and
A. Mora, S.A. Lopez-Rivera and W. Giriat, compositions in “CulnSe,” films 173 (1997) 97
Author index /J ournal of Crystal Growth 173 (1997) 599-604
Ikekame, H., Y. Yanase, T. Ishibashi, T. Saito, Kihnle, J., R.B. Bergmann and J.H. Werner,
Y. Morishita and K. Sato, Effects of Role of critical size of nuclei for liquid-
atomic-hydrogen assistance on hot-wall phase epitaxy on polycrystalline Si films 173 (1997) 62
epitaxy growth of MnSb/GaAs heterostruc- Kung, P., see Kato, T. 173 (1997) 244
tures 173 (1997) 218 Kiinzel, H., see Hase, A. 173 (1997) 14
Ishibashi, T., see Ikekame, H. 173 (1997) 218 Kurlov, V.N. and S.N. Rossolenko, Growth of
Isshiki, H., see Lee, J.-S. 173 (1997) 27 shaped sapphire crystals using automated
Ito, H. and T. Kobayashi, Influence of lattice weight control 173 (1997) 417
mismatch on the crystalline quality of meta- Kuroda, K., I.-H. Choi, H. Unoki and N. Ko-
stable GaAsSb grown by metalorganic shizuka, NdBa,Cu,0,;_; single crystal
chemical vapor deposition 173 (1997) 210 growth by the traveling-solvent floating-
Ito, H. and H. Yokoyama, Carbon doping in zone method 173 (1997)
InAlAs grown by metalorganic chemical Kusunoki, T., see Nakajima, K. 173 (1997)
vapor deposition 173 (1997) 315 Kuznetsov, P.I.,G.G. Yakushcheva, V.A. Jitov,
L.Yu. Zakharov and A.P. Chernushich,
Jagadish, C., see Li, G. 173 (19973)0 2 Photo-MOVPE growth and characteriza-
Jiang, J.H., see Hu, X.B. 173 (19974)6 0 tion of ZnSe/Zn,Cd, _,Se heterostructures 173 (1997) 57
Jiang, S.S., see Hu, X.B. 173 (19974)6 0
Jin, Y., see Li, S. 173 (19973)2 1 Lacmann, R., see Herden, A. 173 (1997) 481
Jin, Z., see Li, S. 173 (19973)2 1 LaCombe, J.C., J.L. Oudemool, M.B. Koss,
Jitov, V.A., see Kuznetsov, P.I. 173 (1997) 57
L.T. Bushnell and M.E. Glicksman,
Joyce, B.A., see Xie, M.-H. 173 (19973)3 6 Measurement of thermal expansion in
liquid succinonitrile and pivalic acid 173 (1997) 167
Kaneko, T., see Davidson, B.R. 173 (1997) 235 Lafont, S., S. Veesler, J.P. Astier and R. Bois-
Kappers, M.J., see Au, Wing kei 173 (1997) 386 telle, Comparison of solubilities and
Karpov, S.Yu., Yu.N. Makarov, E.N. Mokhov, molecular interactions of BPTI molecules
M.G. Ramm, M.S. Ramm, A.D. Roenkov, giving different polymorphs 173 (1997) 132
R.A. Talalaev and Yu.A. Vodakov, Analysis Lal, K.B., see Gadkari, D.B. 173 (1997) 585
of silicon carbide growth by sublimation Lan, C.W. and C.H. Tsai, Modeling of ellipsoid
sandwich method 173 (1997) 408 mirror furnace for floating-zone crystal
Kaspi, R., W.T. Cooley and K.R. Evans, In situ growth 173 (1997) 561
composition control of III-As, —,Sb, alloys Lazzarini, L., see Leo, G. 173 (1997) 277
during molecular beam epitaxy using line- Lee, C.H., see Kim, J.H. 173 (1997) 550
of-sight mass spectrometry 173 (1997) 5 Lee, J.-S., H. Isshiki, T. Sugano and Y. Aoyagi,
Kasu, M., T. Makimoto and N. Kobayashi, Multiatomic step formation with excellent
Nanometer-scale selective-area GaAs growth uniformity on vicinal (1 1 1)A GaAs surfa-
on nitrogen-passivated surfaces using STM ces by metalorganic vapor-phase epitaxy 173 (1997) 27
and MOMBE 173 (1997) 589 Lees, A.K., see Xie, M.-H. 173 (1997) 336
Kato, T., H. Ohsato, T. Okuda, P. Kung, A. Lehoczky, S.L., see Sha, Y.-G. 173 (1997) 88
Saxler, C.-J. Sun and M. Razeghi, Simulta- Leo, G., L. Lazzarini, N. Lovergine, F.
neous growth of two different oriented Romanato and A.V. Drigo, Structural char-
GaN epilayers on (1 1-0) sapphire. I. Mor- acterization and surface lattice strain deter-
phology and orientation 173 (1997) 244 mination of ZnS/GaAs_ heterostructures
Katoh, E., see Ataka, M. 173 (1997) 592 grown by metalorganic vapour phase epi-
Kavanagh, K.L., M.C. Reuter and R.M. Tromp, taxy 173 (1997) 277
High-temperature epitaxy of PtSi/Si(00 1) 173 (1997) 393 Leonardi, E., see Yeoh, G.H. 173 (1997) 492
Khoo, B.C., see Xu, D. 173 (1997) 123 Li, G., M. Petravic and C. Jagadish, Electrical
Kim, D.H., see Wang, J.H. 173 (1997) 201 activation of carbon 6-doped (Al,Ga)As
Kim, J.H., J.W. Park, C.H. Lee and E.P. Yoon, grown by metalorganic vapour-phase epi-
Numerical modeling of microsegregation in taxy 173 (1997) 302
binary alloys 173 (19975)5 0 Li, S., Y. Jin, C. Gao and Z. Jin, Isotropic
Kimura, M., see Tanaka, A. 173 (19972)9 7 growth islands of Gao. 16JNo.g4ASo.g0Sbo,20
Kobayashi, N., see Kasu, M. 173 (19975)8 9 epilayer grown by metalorganic chemical
Kobayashi, T., see Ito, H. 173 (19972)1 0 vapour deposition 173 (1997) 321
Komatsu, H., see Sazaki, G. 173 (19972)3 1 Liao, J.-Y., see Xu, X.-W. 173 (1997) 194
Koshizuka, N., see Kuroda, K. 173 (1997) 73 Lin, L., see Chen, N. 173 (1997) 325
Koss, M.B., see LaCombe, J.C. 173 (19971)6 7 Liu, H.K., see Wang, X.L. 173 (1997) 380
602 Author index Journal of Crystal Growth 173 (1997) 599-604
Liu, W.J., see Hu, X.B. 173 (1997) 460 Otsubo, K., see Nakajima, K. (1997) 42
Long, Y.T., see Frazier, D.O. 173 (1997) 172 Oudemool, J.L., see LaCombe, J.C. (1997) 167
Lopez-Rivera, S.A., see Garcia, V.J. 173 (1997) 222
Lovergine, N., see Leo, G. 173 (1997) 277 Paley, M.S., see Frazier, D.O. 3 (1997) 172
Lu, H.B., see Ma, C.L. 173 (1997) 141 Palosz, W., Removal of oxygen from electronic
materials by vapor-phase processes (1997) 427
Ma, C.L., H.B. Lu, R.Z. Wang, L.F. Zhou, F.Z. Pan, H.F., see Hu, X.B. (1997) 460
Cui and F. Qian, Comparison of controlled Park, J.W., see Kim, J.H. (1997) 550
crystallization of calcium phosphates under Passenberg, W. and W. Schlaak, Suface prep-
three kinds of monolayers 3 (1997) 141 aration for molecular beam epitaxy-
Mahmood, Z., see Novikov, S.V. 3 (1997) 1 regrowth on metalorganic vapour phase
Makarov, Yu.N., see Karpov, S.Yu. 3 (1997) 408 epitaxy grown InP and InGaAsP layers (1997) 266
Makimoto, T., see Kasu, M. 3 (1997) 589 Petravic, M., see Li, G. (1997) 302
Marin, C., P.S. Dutta, E. Dieguez, P. Dusserre Pompe, O., see Rettenmayr, M. (1997) 182
and T. Duffar, On the adhesion of Portnoi, E.L., see Elyukhin, V.A. (1997)
Ino.2Gao.gSb to quartz ampoule during
synthesis 3 (1997) 271 Qian, F., see Ma, C.L. 173 (1997)
Marsh, J.H., see Elyukhin, V.A. 3 (1997) 69
Martinez, L., see Garcia, V.J. 73 (1997) 222 Ramm, M.G., see Karpov, S.Yu. 173 (1997) 408
Marushkin, K.M., see Volkov, V.V. 3 (1997) 285 Ramm, M.S., see Karpov, S.Yu. 173 (1997) 408
Maruyama, T., see Cho, S.H. 3 (1997) 260 Razeghi, M., see Kato, T. 173 (1997) 244
Masumoto, K., see Abe, S. 3 (1997) 104 Rettenmayr, M. and O. Pompe, Interface in-
McFadden, G.B., see Sekerka, R.F. 3 (1997) 597 stabilities on solidifying globulitic particles 173 (19971)8 2
Miki, K., see Yamamoto, K. 3 (1997) 21 Reuter, M.C., see Kavanagh, K.L. 173 (19973)9 3
Miskys, C.R., see de Oliveira, C.E.M. 3 (1997) 214 Robinson, B.J., see Wang, J. 173 (19973)0 7
Misoguti, L., see Carvalho, J.F. 3 (1997) 487 Roenkov, A.D., see Karpov, S.Yu. 173 (19974)0 8
Miyashita, S., see Sazaki, G. 3 (1997) 231 Romanato, F., see Leo, G. 173 (19972)7 7
Mokhov, E.N., see Karpov, S.Yu. 3 (1997) 408 Rossolenko, S.N., see Kurlov, V.N. 173 (19974)1 7
Mora, A., see Garcia, V.J. 3 (1997) 222
Morishita, Y., see Ikekame, H. 3 (1997) 218 Saito, T., see Ikekame, H. 173 (1997) 218
Sasaki, A., see Tokuda, T. 173 (1997) 237
Naji, O., see Davidson, B.R. 173 (19972)3 5 Sato, K., see Ikekame, H. 173 (1997) 218
73 (19972)3 1 Sawada, S., see Hashio, K. 173 (1997) 33
Nakada, T., see Sazaki, G.
3 (1997) 189 Saxler, A., see Kato, T. 173 (1997) 244
Nakahara, S., see Gonda, T.
Sazaki, G., E. Yoshida, H. Komatsu, T.
Nakajima, K., T. Kusunoki and K. Otsubo,
Nakada, S. Miyashita and K. Watanabe,
Bridgman growth of compositionally
Effects of a magnetic field on the nucleation
graded In,Ga,_,As (x = 0.05-0.30) single
crystals for use as seeds for Ing, »5Gao,75As and growth of protein crystals 173 (1997) 231
Schlaak, W., see Passenberg, W. 173 (1997) 266
crystal growth (1997) 42
Sekerka, R.F., S.R. Coriell and G.B. McFad-
Newman, R.C., see Davidson, B.R. (1997) 235
den, Erratum to “Stagnant film model of
Nishijima, Y., see Nishino, H. (1997) 330
the effect of natural convection on the de-
Nishino, H. and Y. Nishijima, Influence of step
ndrite operating state”. [J. Crystal Growth
motion on hillock formation in CdTe(1 0 0)
154 (1995) 370] 173 (1997) 597
grown on GaAs(100) by metalorganic
Sen, S., B.K. Dhindaw, D.M. Stefanescu, A.
vapor phase epitaxy (1997) 330
Catalina and P.A. Curreri, Melt convection
Noda, S., see Tokuda, T. (1997) 237
effects on the critical velocity of particle
Norman, A.F., see Eckler, K. (1997) 528
engulfment 173 (1997) 574
Novikov, S.V., T.S. Cheng, Z. Mahmood, I.
Sha, Y.-G., C-H. Su and S.L. Lehoczky,
Harrison and C.T. Foxon, Selective
Growth of HgZnTe by directional solidifi-
meltback etching of GaN layers in liquid-
phase electroepitaxial technique (1997) 1 cation in a magnetic field 173 (1997) 88
Nunes, F.D., see Carvalho, J.F. (1997) 487 Shah, A.P., see Gadkari, D.B. 173 (1997) 585
Shelyakin, A.A., see Volkov, V.V. 173 (1997) 285
Shi, X., see Sun, Z. 173 (1997) 402
Ohkoshi, H., see Harada, T. 3 (1997) 109 Shimamura, K., see Chani, V.1. 173 (1997) 117
Ohsato, H., see Kato, T. (1997) 244 Shu, C., see Xu, D. 173 (1997) 123
Okuda, T., see Kato, T. (1997) 244 Simmons, J.G., see Wang, J. 173 (1997) 307
Author index Journal of Crystal Growth 173 (1997) 599-604
Sloan, J., J. Cook, J.R. Heesom, M.L.H. Green Vives, C., Crystallization of aluminum alloys in
and J.L. Hutchison, The encapsulation and the presence of vertical electromagnetic
in situ rearrangement of polycrystalline force fields 73 (1997) 541
SnO inside carbon nanotubes 73 (1997) 81 Vodakov, Yu.A., see Karpov, S.Yu. 3 (1997) 468
Smith, N.A., see Cockayne, B. 73 (1997) 456 Volkov, V.V., J. Van Landuyt, K.M. Marush-
Sokolovsky, A.A., see Volkov, V.V. 73 (1997) 285 kin, R. Gijbels, C. Ferauge, M.G. Vasilyev,
Stefanescu, D.M., see Sen, S. 3 (1997) 574 A.A. Shelyakin and A.A. Sokolovsky, Char-
Strom, C.S. and P. Bennema, Combinatorial acterisation of the LPE grown In-
compatibility as habit-controlling factor in GaAsP/InP hetero-structures: IR-LED at
lysozyme crystallization. I. Monomeric and 1.66 um used for the remote monitoring of
tetrameric F faces derived graph-theoret- methane gas 3 (1997) 285
ically 3 (1997)
Strom, C.S. and P. Bennema, Combinatorial Wakahara, A., see Tokuda, T. 3 (1997)
compatibility as habit-controlling factor in Wakayama, N.L., see Ataka, M. 3 (1997)5
lysozyme crystallization. Il. Morphological Wang, J., B.J. Robinson, D.A. Thompson and
evidence for tetrameric growth units 73 (1997) 159 J.G. Simmons, The morphology of InP/In-
Su, C.-H., see Sha, Y.-G. 3 (1997) 88 GaAs grown by molecular beam epitaxy
Sugano, T., see Lee, J.-S. 3 (1997) 27 onto V-grooved InP substrates 3 (1997) :
Sukegawa, T., see Tanaka, A. 3 (1997) 297 Wang, J.H. and D.H. Kim, Numerical analysis
Sun, C.-J., see Kato, T. 3 (1997) 244 of melt/solid interface shape in zone melting
Sun, Y., see Sun, Z. 73 (1997) 402 recrystallization process 3 (1997) 201
Sun, Z., X. Shi, B.K. Tay, D. Flynn, X. Wang, Z. Wang, J.Y., see Hu, X.B. 3 (1997) 460
Zheng and Y. Sun, Morphological features Wang, R.Z., see Ma, C.L. 3 (1997) 141
of diamond films grown on diamond-like Wang, Xun, see Chen, Xi-ying 3 (1997) 51
carbon films synthesized from polymer by Wang, X., see Sun, Z. 3 (1997) 402
chemical vapor deposition (1997) 402 Wang, X.L., J. Horvat, H.K. Liu and S.X. Dou,
Suto, K., see Abe, S. (1997) 104 Spiral growth of Bi,Sr,CaCu,O, single
crystals using KCl flux technique 73 (1997) 380
Takei, H., see Tanaka, M. (1997) 440 Wang, Y., see Chen, N. 73 (1997) 325
Talalaev, R.A., see Karpov, S.Yu. (1997) 408 Wang, Z.G., see Hu, X.B. 3 (1997) 460
Tanaka, A., A. Watanabe, M. Kimura and T. Watanabe, A., see Tanaka, A. 3 (1997) 997
Sukegawa, GaSb crystals pulled from non-
Watanabe, K., see Sazaki, G. 3 (1997)
stoichiometric solution at constant temper- Wei Shyy, see Hong Ouyang 73 (1997) wUn
Tanaaktaur,e M., M. Hasegawa and H. Takei, Crys- 3 (1997) 297 WWeernnge,r , C.-JI..H,. , sesee e ChKeini,hn leT.,- C.J. 73 3 ((11999977)) wwe
tal growth of PdCoO,, PtCoO, and their Wu, H.-C., see Chen, T.-C. 3 (1997) sNN=e ws
solid-solution with delafossite structure 3 (1997) 440 Wynblatt, P., see Cheng, W.-C. 3 (1997) &am — =ANDDAD
Tatsumi, M., see Hashio, K. (1997) 33
Tay, B.K., see Sun, Z. (1997) 402
Thompson, D.A., see Wang, J. (1997) 307 Xie, M.-H., A.K. Lees, J.M. Fernandez, J
Zhang and B.A. Joyce, Arsenic surface seg-
Tokuda, T., A. Wakahara, S. Noda and A.
regation and incorporation in Si and
Sasaki, Plasma-excited organometallic va-
Si,_.Ge, during gas source molecular
por phase epitaxy of GaN on (000 1)sap-
beam epitaxy 3 (1997) 33
phire 3 (1997)
Xu, D., C. Shu and B.C. Khoo, Numerical
Trivedi, R., see Fabietti, L.M. (1997)§
simulation of flows in Czochralski crystal
Tromp, R.M., see Kavanagh, K.L. (1997) 3
growth by second-order upwind QUICK
Tsai, C.H., see Lan, C.W. (1997)
scheme 3 (1997)
Unoki, H., see Kuroda, K. 3 (1997) Xu, X.-W., T.-C. Chong and J.-Y. Liao, Influ-
ence of crystallographic polarity on the op-
Vaille, M., see Vennegues, P. (1997) 249 tical properties of Bi, ,SiO9 crystals 3 (1997)
Van Landuyt, iJ ., see Volkov, V.V. 3 (1997) 285
Vasilyev, M.G., see Volkov, V.V. (1997) 285 Yakushcheva, G.G., see Kuznetsov, P.I. 3 (1997)
Veesler, S., see Lafont, S. (1997) 132 Yamamoto, K., H. Asahi, K. Miki and S.
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Gibart, Microstructure of GaN epitaxial aminoantimony and triisopropylantimony
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604 Author index /J ournal of Crystal Growth 173 (1997) 599-604
Yanase, Y., see Ikekame, H. 173 (1997) 218 Zakharov, L.Yu., see Kuznetsov, P.I. 173 (1997) 57
Yao, M., A. Chait, A.L. Fripp and W.J. Zeng, H.C., Growth kinetic study of potassium
Debnam, Magnetically damped convection niobate single crystal: a new method for
and segregation in Bridgman growth of high time-resolution kinetic data of ABO;-
PbSnTe 173 (1997) 467 type materials 173 (19974)4 6
Yao, M., see Yeoh, G.H. 173 (1997) 492 Zhang, J., see Xie, M.-H. 173 (19973)3 6
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H.C. de Groh III and M. Yao, A numerical Zheng, Z., see Sun, Z. 173 (19974)0 2
and experimental study of natural convec- Zhou, L.F., see Ma, C.L. 173 (19971)4 1
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Yokoyama, H., see Ito, H. 173 (1997) 315
Yoon, E.P., see Kim, J.H. 173 (1997) 550
Yoshida, E., see Sazaki, G. 173 (1997) 231
JOURNAL OF CRYSTAL
GROWTH
ELSEVIER Journal of Crystal Growth 173 (1997) 605-606
Subject index
Apparatus Germanium
for scanning tunneling microscopy in situ metalorganic mo- silicon 336
lecular beam epitaxy 589
Heat flow control
Cellular growth of ellipsoid mirror furnace 561
of naphthalene 503 Heterojunction, see Device characterization
Computer simulation Hydrodynamics, see Convection
of Czochralski growth 123
of horizontal Bridgman growth 492 Kinetics
of interface shape 367 of defects formation 503
of lead tin telluride growth 467 of growth 182, 194, 237, 336, 386, 446, 503
of micro segregation in binary alloys 550 of nucleation 62, 141, 321
of temperature field 561
Constitutional supercooling Lasers, see Device characterization
of indium gallium arsenide melt 42 Lasers, crystals for
Convection 172, 352, 492 neodymium doped potassium lithium niobate 226
Lysozyme 150, 159, 592
Dendritic growth
of ice crystals 189 Melt growth technique
Device characterization - by Bridgman-—Stockbarger method
— heterojunction 277, 285 of bismuth silicon oxide 194
lasers 285 of indium gallium antimonide 271
- second harmonic generation 117 of indium gallium arsenide 42
Defects of lead tin telluride 467
in potassium aluminum sulphate 481 of succionitrile 492
stoichiometry in gallium arsenide 325 theory of heat flow in cadmium telluride growth 352
Doping of by Czochralski method
carbon in aluminum indium arsenide 315 of gallium antimonide 297
- delta layer carbon in aluminum gallium arsenide 303
silicon in bulk gallium arsenide 33 of yttrium aluminate 456
Diffusional control theory
of indium aluminum arsenide melt 42 of growth 123
Dissolution of interface shape 367
of manganese sulphate in zinc sulphate 222 by equilibrium of solidification droplets
of lead bismuth nickel alloys 513
Epitaxy, see Thin film growth by floating zone method
Etching of neodymium barium copper oxide 73
chemical 21, 194, 460, 481 by flux
— melt 1 of BSCCO 380
Eutectic growth of neodymium yttrium aluminum borate 460
- of aluminum alloys 541 by liquid encapsulated Chochralski
of indium phosphide 214
Growth simulation - by magnetic field
- particle engulfment 574 of eutectic aluminum alloys 541
606 Subject index /J ournal of Crystal Growth 173 (1997) 605—606
by uniaxial solidification by liquid phase epitaxy
of mercury zinc telluride in magnetic field 88 of gallium nitride 1
of potassium niobate 446 of indium gallium arsenide phosphide 285
by vertical directional solidification of silicon 62
of indium antimonide 585 by metalorganic molecular beam epitaxy
Microgravity, growth under of gallium arsenide 589
of polydiacethylene thin films 172 by molecular beam epitaxy
Morphological stability of aluminum gallium indium arsenide
of diamond 402 of gallium arsenide antimonide 5
of gallium nitride 244 of gallium indium arsenide 14
of glubulitic particles 182 of gallium nitride 1, 260
of ice 189 of indium gallium arsenide 266, 307
of lead silicon 393 of indium gallium arsenide phosphide 266
of nickel carbon primary dendrites 528 of indium phosphide 266, 307
by vapor phase epitaxy
Nucleation through chemical vapor deposition
of calcium phosphate 141 of copper indium selenide 97
of lysozyme 592 of diamond 402
of protein crystals 231 of silicon 343
of tin oxide in carbon nanotubes 81 through evaporation and condensation
Numbers of titanium on magnesium oxide 109
Grashof 123, 352 through metalorganic chemical vapor deposition
Peclet 123 of aluminum gallium arsenide 302
Rayleigh 201, 352 of cadmium telluride 330
of cadmium zine selenide 57
Solution growth technique of gallium arsenide 27, 210
by low temperature method of gallium antimonide 210
of gallium antimonide 297 of gallium arsenide antimonide 210
Statistical mechanics, molecular theory of gallium indium arsenide antimonide 321
of miscibility gap of ternary alloys 69 of gallium nitride 237, 244, 249
Stefan problem or moving boundary problem of indium aluminum arsenide 315
of solid liquid interface 467 of mercury telluride 386
of zone melting recrystallization process 201 of zinc selenide 57
Superconductivity materials, high T, of zinc sulphide 277
bulk through micro wave glow discharge
of BSCCO 380 of gallium sulphate 51
of NdBCO 73
Surface energy, determination Vapor growth technique
of lysozyme 150, 159 by chemical transport
Surface structure of manganese zinc sulphide 222
of lysozyme 150, 159 by electron beam evaporation
of polar faces 194 of platinum silicide 393
by evaporation and condensation
Thin film growth, epitaxy of silicon carbide 408
by gas source molecular beam epitaxy
of lead calcium strontium sulphate 104
of manganese antimonide 218