Journal of Crystal Growth 1997: Vol 171 Index

9 Pages·1997·2.2 MB·English

journscor CRYSTAL
GROWTH
ELSEVIER Journal of Crystal Growth 171 (1997) 615-619
Author index
\ddai-Mensah, J., see Zheng, K. 171 (1997) 197 Chen, H., W.Q. Cheng, X.G. Xie, Q. Huang
Anders, M.J., see Bongers, M.M.G. 171 (1997) 333 and J.M. Zhou, Room-temperature lumines-
Ariaans, G.J.A., see Strom, C.S. 171 (1997) 236 cence from SiGe self-organized dots 171 (1997) 61
Artemyev, M.V., Yu.P. Rakovich and G.P. Chen, W.C., see Mai, Z.H. 171 (1997) 512
Yablonski, Effect of de electric field on Cheng, J., see Zhu, J. 171 (1997) 357
photoluminescence from quantum-confined Cheng, T.S., see Xin, Y. 171 (1997) 321
PbI, nanocrystals 171 (19974)4 7 Cheng, W.Q., see Chen, H 171 (1997) 61
Ataka, M., see Takano, K.J. 171 (1997) 554 Chong, T.-C., see Beh, C.-Y. 171 (1997) 501
Atuchin, V.V., see Isaenko, L.1 171 (1997) 146 Chu, J., see Li, B. 171 (1997) 311
Chu, J., see Zhu, J 171 (1997) 357
Bao, D. and A. Kuang, Growth of epitaxial and Coelho, A.A., S. Gama, C.A. Ribeiro, N.L.
oriented K(Tay ,;Nbp 33/0, thin films by Sanjurjo, C.V. Mohan and H. Kronmiiller,
sol—gel method Some experiments on the crystal growth
Bastos, P.L., see Bongers, M.M.G. and characterization of Fe,,R, (R = rare
Beh, C.-Y., T.-C. Chong, H. Kumagai and M. earth) single crystals by the Bridgman
Hirano, Top seeded solution growth of Rb- method 171 (1997) 125
doped KNbO, single crystals (1997) 501 Coriell, S.R., see Sekerka, R.F. 171 (1997) 303
Berglund, K.A., see Pan, B. (1997) 226
Birch, J., see Wang, X. (1997) 401
Bocchi, C., see Sochinskii, N.V. (1997) 425 Das, 1., A. Sharma, A. Kumar and R.S. Lall,
Bogunov, V., see Kleptsyn, V. (1997) 109 Non-equilibrium growth patterns of carbo-
Bongers, M.M.G., P.L. Bastos, M.J. Anders hydrate and saccharin in gel media 171 (1997) 543
and L.J. Giling, Non-planar crystal growth Davey, R.J. and T. Hirai, The preparation of
of Gay 5Ing;P by metalorganic chemical calcium carbonate in an emulsified liquid
vapour deposition (1997) 333 membrane 171 (1997) 318
Bouropoulos, N.Ch., C.G. Kontoyannis and P.G. Diéguez, E., see Sochinskii, N.V. 171 (1997) 425
Koutsoukos, Nucleation kinetics of ¢- Dimitrov, N., see Popov, A. 171 (1997) 250
caprolactam melts in the presence of water Dunin-Borkowski, R.E., see Xin, Y. 171 (1997) 32!
impurity (1997) 538 Dupret, F., see Van den Bogaert, N. 171 (1997) 65
Brown, P.D., see Xin, Y. (1997) 321 Dupret, F., see Van den Bogaert, N 171 (1997) 77
Buchan, N., see Rosenberger, F. (1997) 270
Campbell, T.A. and J.N. Koster, In situ visual- Endo, S., see Chani, V.I. 171 (1997) 472
ization of constitutional supercooling within Erbil, A., see Nami, Z. 171 (1997) 154
a Bridgman—Stockbarger system (1997) I
Casey, S.M., see Mullan, C.A (1997) 415
Chani, V.I., see Yu, Y.M. (1997) 463 Fan, X. and T. Ishigaki, Critical free energy for
Chani, V.I., K. Shimamura, S. Endo and T. nucleation from the congruent melt of MoSi, 171 (1997) 166
Fukuda, Growth of mixed crystals of the Feiler, D., R.S. Williams, A.A. Talin, H. Yoon
KTiOPO, (KTP) family (1997) 472 and M.S. Goorsky, Pulsed laser deposition
Chayen, N.E., E.H. Snell, J.R. Helliwell and of epitaxial AIN, GaN, and InN thin films
P.F. Zagalsky, CCD video observation of on sapphire(0001) 171 (1997) 12
microgravity crystallization: apocrusta- Fontecilla~-Camps, J.C., see Hirschler, J. 171 (1997) 559
cyanin C, 171 (1997) 219 Foxon, C.T., see Xin, Y. 171 (1997) 321
Chen, F., see Lu, J.W. 171 (1997) 601 Franse, J.J.M., see Hien, N.T. 171 (1997) 102
616 Author index
Frazier, D.O., RJ. Hung, M.S. Paley, B.G Imanieh, M., see Mullan, C.A. 171 (19974)1 5
Penn and Y.T. Long, Buoyancy-driven heat Isaenko, L.IL., A.A. Merkulov, V.1. Tjurikov,
transfer during application of a thermal gra- V.V. Atuchin, L.V. Sokolov and E.M.
dient for the study of vapor deposition at Trukhanov, Growth and real structure of
low pressure using an ideal gas 171 (1997) 288 KTiOAsO, crystals from self-fluxes 171 (1997) 146
Fujioka, K., see Nakatsuka, M. 171 (1997) 531 Ishibashi, T., see Watanabe, N. 171 (1997) 21
Fujita, H., see Nakatsuka, M. 171 (1997) 531 Ishigaki, T., see Fan, X. 171 (1997) 166
Fukuda, T., see Yu, Y.M. 171 (1997) 463 Ito, H., see Watanabe, N. 171 (1997) 21
Fukuda, T., see Chani, V.I. 171 (1997) 472
Furukawa, Y., see Nagashima, K. 171 (1997) 577
Janssen, H.W.M., see Woensdregt, C.F. 171 (1997) 392
Gama, S., see Coelho, A.A. 171 (1997) 125 Jeon, H.L, M.S. Jeong, H.W. Shim, Y.G. Shin,
Geertman, R.M., see Strom, C.S. 171 (1997) 236 K.Y. Lim, E.-K. Suh and H.J. Lee, Optical
Gerson, A.R., see Zheng, K. 171 (1997) 197 investigation of InGaAs /GaAs heterointer-
Gerson, A.R. and K. Zheng, Bayer process faces grown by metalorganic chemical va-
plant scale: transformation of sodalite to por deposition 171 (1997) 349
cancrinite 171 (1997) 209 Jeong, M.S., see Jeon, H.I. 171 (1997) 349
Giling, L.J., see Bongers, M.M.G. 171 (1997) 333 Jiang, X., see Zhang, W.J. 171 (1997) 485
Gloubokoy, A., see Pajaczkowska, A. 171 (1997) 387 Jie, W., see Mao, Y. 171 (1997) 548
Gloubokov, A., see Woensdregt, C.F. 171 (1997) 392 Jung, T. and G. Miiller, Amplitudes of doping
Gnesin, B.A., see Starostin, M.Yu. 171 (1997) 119 striations: comparison of numerical calcula-
Goorsky, M.S., see Feiler, D. 171 (1997) 12 tions and analytical approaches 171 (1997) 373
Guenrikhson, V., see Kleptsyn, V. 171 (1997) 109
Giintherodt, G., see Winkeler, L. 171 (1997) 380
Guo, H.X., see Mai, Z.H. 171 (1997) 512
Kadokura, K. and Y. Takano, Germanium—
silicon single crystal growth using an encap-
Harada, T. and H. Ohkoshi, Growth and struc- sulant in a silica ampoule 171 (1997) 56
ture of Ti films deposited on chemically Kanabe, T., see Nakatsuka, M. 171 (19975)3 1
polished MgO(100) substrates 171 (1997) 433 Kashchiev, D., see Popov, A. 171 (19972)5 0
Harigae, H., see Takano, K.J. 171 (1997) 554 Kato, H., see Okuno, Y. 171 (1997) 39
Helliwell, J.R., see Chayen, N.E. 171 (1997) 219 Kawamura, Y., see Takano, K.J. 171 (19975)5 4
Helmersson, U., see Wang, X. 171 (1997) 401 Kiely, C.J., see Mullan, C.A. 171 (19974)1 5
Hien, N.T., J.J.M. Franse, J.J.M. Pothuizen, Kipp, S., see Rolfs, J. 171 (19971)7 4
T.W. Li and A.A. Menovsky, Growth and Kipp, S., R. Lacmann and J. Rolfs, Crystalliza-
characterisation of bulk Sr,CuO,Cl, single tion of potassium nitrate (KNO,) in aque-
crystals 171 (1997) 102 ous solution. Part II. Kinetical studies under
Hirai, T., see Davey, R.J. 171 (1997) 318 the influence of additives 171 (1997) 183
Hirano, M., see Zeng, H.C. 171 (1997) 493 Klages, C.-P., see Zhang, W.J. 171 (1997) 485
Hirano, M., see Beh, C.-Y. 171 (1997) 501 Kleptsyn, V., V. Guenrikhson and V. Bogunov,
Hirschler, J. and J.C. Fontecilla-Camps, Protein The growth and X-ray investigation of
crystal growth rates are face-specifically neodymium gallate as a substrate material
modified by structurally related contami- for high-temperature superconductors 171 (1997) 109
nants 171 (1997) 559 Klos, A., see Pajaczkowska, A. 171 (1997) 387
Ho, C.H., see Liao, P.C. 171 (1997) 586 Komatsu, R., see Uda, S. 171 (1997) 458
Holcomb, E.R.C., see Li, J.-S. 171 (1997) 259 Konstantinova, M.A., see Koprinarov, N.S. 171 (1997) 111
Holstein, W.L., Etching study of ferroelectric Kontoyannis, C.G., see Bouropoulos, N.Ch. 171 (1997) 538
microdomains in LiNbO, and MgO:LiNbO, 171 (1997) 477 Koprinarov, N.S., M.A. Konstantinova, G.V.
Hu, Y.M., see Huang, J.C.A. 171 (1997) 442 Pchelarov and M.V. Marinov, Carbon
Huang Gongfan, see Li Zhengdong 171 (1997) 506 macrostructures obtained at AC arc dis-
Huang, J.C.A., T.E. Wang, C.C. Yu, Y.M. Hu, charge 171 (1997) 111
P.B. Lee and M.S. Yang, Epitaxial growth Koster, J.N., see Campbell, T.A. 171 (1997) 1
and characterization of (100) and (110) Koutsoukos, P.G., see Bouropoulos, N.Ch. 171 (1997) 538
permalloy films 171 (1997) 442 Kronmiiller, H., see Coelho, A.A. 171 (1997) 125
Huang, Q., see Chen, H. 171 (1997) 61 Kuang, A., see Bao, D. 171 (1997) 314
Huang, Y.S., see Liao, P.C. 171 (1997) 586 Kumagai, H., see Zeng, H.C. 171 (1997) 493
Humphreys, C.J., see Xin, Y. 171 (1997) 321 Kumagai, H., see Beh, C.-Y. 171 (1997) 501
Hung, R.J., see Frazier, D.O. 171 (1997) 288 Kumar, A., see Das, I. 171 (1997) 543
Author index 617
Lacmann, R., see Rolfs, J. 171 (1997) 174 Menovsky, A.A., see Hien, N.T. 171 (1997) 102
Lacmann, R., see Kipp, S. 171 (1997) 183 Merkulov, A.A., see Isaenko, L.I. 171 (1997) 146
Lall, R.S., see Das, I. 171 (1997) 543 Meyer, S. and A.G. Ostrogorsky, Forced con-
Lee, C.-R., S.-J. Son, I.-H. Lee, J.-Y. Leem and vection in vertical Bridgman configuration
S.-K. Noh, Growth and characterization of with the submerged heater 171 (1997) 566
GaN epilayers grown at various flow rates Misman, O., see Nami, Z. 171 (1997) 154
of trimetylgallium during growth of nucle- Mohan, C.V., see Coelho, A.A. 171 (1997) 125
ation layers 171 (1997) 27 Mullan, C.A., C.J. Kiely, S.M. Casey, M.
Lee, H.J., see Jeon, HI. 171 (1997) 349 Imanieh, M.V. Yakushev and R.D. Tomlin-
Lee, I.-H., see Lee, C.-R. 171 (1997) 27 son, A microstructural and compositional
Lee, P.B., see Huang, J.C.A. 171 (1997) 442 analysis of CulnSe, ingots grown by the
Leem, J.-Y., see Lee, C.-R. 171 (1997) 27 vertical Bridgman technique 171 (1997) 415
Lehoczky, S.L., see Sha, Y.-G. 171 (1997) 516 Miiller, G., see Jung, T. 171 (1997) 373
Leusen, F.J.J., see Strom, C.S. 171 (1997) 236 Miiller, R., see Winkeler, L. 171 (1997) 380
Li, B., J. Chu and D. Tang, Segregation coeffi- Munoz, V., see Sochinskii, N.V. 171 (1997) 425
cients in Te-rich Hg—Cd-Te systems 171 (1997) 311
Li, H., see Lu, P. 171 (1997) 453
Nagashima, K. and Y. Furukawa, Nonequilib-
Li, H.D., H.B. Yang, G.T. Zou, S. Yu, J.S. Lu,
rium effect of anisotropic interface kinetics
S.C. Qu and Y. Wu, Formation and photo-
on the directional growth of ice crystals 171 (1997) 577
luminescence spectrum of w-GaN powder 171 (1997) 307
Nakatsuka, M., K. Fujioka, T. Kanabe and H
Li, J.-S., K. Nishioka and E.R.C. Holcomb,
Fujita, Rapid growth over 50 mm/day of
Thermodynamic analysis of the driving force
water-soluble KDP crystal 171 (1997) 531
for forming a critical nucleus in multicom-
Nakhodkin, N.G. and T.V. Rodionova, The
ponent nucleation 171 (1997) 259
mechanism of secondary grain growth in
Li, T.W., see Hien, N.T. 171 (1997) 102
polysilicon films 171 (1997) 50
Li Zhengdong, Wu Baichang, Su Genbo and
Nami, Z., O. Misman, A. Erbil and G.S. May,
Huang Gongfan, Crystal growth and optical
Computer simulation study of the MOCVD
properties of 4-aminobenzophenone (ABP) 171 (1997) 506
growth of titanium dioxide films 171 (1997) 154
Liao, P.C., C.H. Ho, Y.S. Huang and K.K.
Nashelsky, A.Ya. and E.O. Pulner, A volatile
Tiong, Preparation and characterization of
impurity distribution over the length of a
pyrite-like single crystal phase in the Ir—-Te
crystal grown via the method of directional
system 171 (1997) 586 melt crystallization 171 (1997) 94
Lim, K.Y., see Jeon, H.I. 171 (1997) 349
Ni, W.-X., see Wang, X. 171 (1997) 401
Lim, L.C., see Zeng, H.C. 171 (1997) 493
Nishioka, K., see Li, J.-S. 171 (1997) 259
Liu, J., see Mao, Y. 171 (1997) 548
Noh, S.-K., see Lee, C.-R. 171 (1997) 27
Long, Y.T., see Frazier, D.O. 171 (1997) 288
Lu, J.S., see Li, H.D. 171 (1997) 307
Lu, J.W. and F. Chen, Assessment of mathe- Oda, O., see Seki, Y. 171 (1997) 32
matical models for the flow in directional Oebel, J., see Winkeler, L. 171 (1997) 380
solidification 171 (1997) 601 Ogura, M., see Wang, X.-L. 171 (1997) 341
, P., H. Li, S. Sun and B. Tuttle, Novel Ohkoshi, H., see Harada, T. 171 (1997) 433
single-solid-source metalorganic chemical Okuno, Y., H. Kato and M. Sano, Stoichiome-
vapor processing of PT and PZT thin films 171 (1997) 453 try control of ZnSe crystals 171 (1997) 39
Ostrogorsky, A.G., see Meyer, S. 171 (1997) 566
Ouazzani, J., see Rosenberger, F. 171 (1997) 270
Ma, W.Y., see Mai, Z.H. 171 (1997) 512
Mai, Z.H., W.C. Chen, H.X. Guo, W.Y. Ma, Pajaczkowska, A., A. Gloubokov, A. Klos and
G.J. Zhai and L.S. Wu, Study of a-LilO, C.F. Woensdregt, Czochralski growth of
single crystals grown in space 171 (1997) 512 SrLaAlO, and SrLaGaO, single crystals and
Mao, Y., J. Liu, W. Jie and Y. Zhou, Effect of its implications for the crystal morphology 171 (1997) 387
the accelerated crucible rotation technique Pajaczkowska, A., see Woensdregt, C.F. 171 (1997) 392
on dendritic growth morphology 171 (1997) 548 Palazogli, A., see Young, G.L. 171 (1997) 361
Marin, C., see Sochinskii, N.V. 171 (1997) 425 Paley, M.S., see Frazier, D.O. 171 (1997) 288
Marinov, M.V., see Koprinarov, N.S. 171 (1997) 111 Pan, B. and K.A. Berglund, Time-resolved flu-
Matsuhata, H., see Wang, X.-L. 171 (1997) 341 orescence and anisotropy of covalently cou-
May, G.S., see Nami, Z. 171 (1997) 154 pled 1l-pyrenebutyric acid for monitoring
McDonald, K.A., see Young, G.L. 171 (1997) 361 the crystallization conditions of lysozyme 171 (1997) 226
McFadden, G.B., see Sekerka, R.F. 171 (1997) 303 Pchelarov, G.V., see Koprinarov, N.S. 171 (1997) 111
618 Author index
Penn, B.G., see Frazier, D.O. (1997) 288 Strom, C.S., F.J.J. Leusen, R.M. Geertman and
Popov, A., D. Kashchiev, N. Dimitrov and 7 G.J.A. Ariaans, forphology of the diastere
Vitanov, Structural transformation process omeric salt of the alkaloid ephedrine and a
in underpotential monolayer adsorbates: two chlorine substituted cyclic phosphoric acid
types of adsorption sites on the electrode (1997) 250 (CLINAM) 171 (1997) 236
Pothuizen, J.J.M., see Hien, N.T. (1997) 102 Su, C.-H., see Sha, Y.-G 171 (1997) 516
Pulner, E.O., see Nashelsky, A.Ya. (1997) 94 Su Genbo, see Li Zhengdong 171 (1997) 506
Suh, E.-K., see Jeon, H.1. 171 (1997) 349
Qu, S.C., see Li, H.D. (1997) Sun, S., see Lu, P. 171 (1997) 453
Tabarrok, B.., see Ye, X.
Rakovich, Yu.P., see Artemyev, M.V. (1997) Tagami, M. and Y. Shiohara, Control of Pr for
Ribeiro, C.A., see Coelho, A.A. (1997) Ba substitution in PBCO single crystals by
Rodionova, T.V., see Nakhodkin, N.G. (1997) the crystal pulling method 171 (1997) 409
Rojo, J.C., see Sochinskii, N.V. (1997) Takano, K.J., H. Harigae, Y. Kawamura and M.
Rolfs, J., R. Lacmann and S. Kipp, Crystalliza Ataka, Effect of hydrostatic pressure on the
tion of potassium nitrate (KNO,) in aque crystallization of lysozyme based on in situ
ous solution. I. Growth kinetics of the pure observations 171 (1997) 554
system (1997) Takano, K.J. and M. Wakatsuki, Development
of an optical liquid high pressure cell and
Rolfs, J., see Kipp, S. 1 (1997)
Rosenberger, F., J. Ouazzani, I. Viohl and N its application to visual observation of pres-
Buchan, Physical vapor transport revisited (1997) 270 sure-driven crystal growth I 71 (1997) 59]
Takano, Y., see Kadokura, K. l 71 (1997) 56
Takayama, K.., see Uda, S. l 71 (1997) 458
Sang, W.-B., S.-Q. Zhou and W.-H. Wu, Inves Takei. H., see Yan, Z. | l (1997) 131
tigation of equilibrium partial pressures over Talin, A.A., see Feiler, D. 17] (1997) 12
(Hg,_ ,Cd,),Te,_, (y < 0.5) melts (1997) Tang, D., see Li, B. 171 (1997) 311
Sanjurjo, N.L., see Coelho, A.A. (1997) 12 Tiong, K.K., see Liao, P.C 71 (1997) 586
Sano, M., see Okuno, Y. (1997) Tjurikov, V.I., see Isaenko, L.I. 171] (1997) 146
Sato, K., see Seki, Y. (1997) Tomlinson, R.D., see Mullan, C.A. 171 (1997) 415
Sekerka, R.F., S.R. Coriell and G.B. McFad Trukhanov, E.M., see Isaenko, L.I. 171 (1997) 146
den, The effect of container size on den Tuttle, B., see Lu, P. 171 (1997) 453
dritic growth in microgravity i
Seki, Y., K. Sato and O. Oda, Solution growth Uda, S., R. Komatsu and K. Takayama, Con-
of ZnTe single crystals by the vertical gruent composition and solid solution range
Bridgman method using a_ hetero-seeding of Li,B,O, crystal (1997) 458
technique (1997)
Sha, Y.-G., C.-H. Su and §.L. Lehoezky, Mass Van den Bogaert, N. and F. Dupret, Dynamic
flux of ZnSe,_,S, and ZnSe,_,Te, by global simulation of the Czochralski pro-
physical vapor transport (1997) 516 cess. I. Principles of the method (1997) 65
Sharma, A., see Das, I. (1997) 543 Van den Bogaert, N. and F. Dupret, Dynamic
Shim, H.W., see Jeon, H.I. (1997) 349 global simulation of the Czochralski pro-
Shimamura, K., see Yu, Y.M. (1997) 463 cess. II. Analysis of the growth of a germa-
Shimamura, K., see Chani, V.I. | (1997) 472 nium crystal (1997) 77
Shin, Y.G., see Jeon, H.1 (1997) 349 Van der Heijden, A.E., see van der Weijden,
Shiohara, Y., see Tagami, M. (1997) 409 R.D. (1997) 190
Smart, R.S.C., see Zheng, K. (1997) 197 Van der Weijden, R.D., A.E. van der Heijden,
Snell, E.H., see Chayen, N.E (1997) 219 G.J. Witkamp and G.M. van Rosmalen, The
Sochinskii, N.V., C. Marin, J.C. Rojo, V. influence of total calcium and total carbon-
Mujiioz, C. Bocchi and E. Diéguez, Vapor ate on the growth rate of calcite (1997) 190
phase epitaxy of Hg,_ ,Cd,I, layers on Van Rosmalen, G.M., see van der Weijden,
CdTe substrates (1997) 425 R.D. (1997) 190
Sokolov, L.V. , see Isaenko, L.1. (1997) 146 Viohl, I., see Rosenberger, F. (1997) 270
Son, S.-J. , see Lee, C.-R. (1997) 27 Vitanovy, T., see Popov, A. (1997) 250
Starostin, M.Yu., B.A. Gnesin and T.N.
Yalovets, Microstructure and crystallo Wakatsuki, M., see Takano, K.J. (1997) 591
graphic phase textures of the alumina Walsh, D., see Ye, X. (1997) 525
zirconia eutectics 1 (1997) 119 Wang, T.E., see Huang, J.C.A. (1997) 442
Author index 619
Wang, X., U. Helmersson, J. Birch and W.-X Yang, H.B., see Li, H.D. 171 (19973)0 7
Ni, High resolution X-ray diffraction map- Yang, M.S., see Huang, J.C.A. 171 (1997) 442
ping studies on the domain structure of Ye, X., B. Tabarrok and D. Walsh. Tempera
LaAlO, single crystal substrates and its in ture dependence of associated liquid species,
fluence on SrTiO, film growth (1997) 401 heat capacity and enthalpy of mixing for
Wang, X.-L., M. Ogura and H. Matsuhata, CdTe solution growth 171 (1997) 525
Fabrication of highly uniform AlGaAs Yoon, H., see Feiler, D. 171 (1997)
GaAs quantum wire superlattices by flow Young, G.L., K.A. McDonald and A. Palazogli,
rate modulation epitaxy on V-grooved sub- Thermal stress analysis of crystal growth in
strates (1997) 341 a horizontal Bridgman furnace (1997) 361
Watanabe, N., H. Ito and T. Ishibashi, Mecha- Yu, C.C., see Huang, J.C.A. (1997) 442
nism of carbon incorporation into GaAs Yu, S., see Li, H.D. (1997) 307
studied using isotopically labeled trimeth- Yu, Y.M., V.I. Chani, K. Shimamura and T.
ylarsine (1997) 21 Fukuda, Growth of Ca,(Li,Nb,Ga);O,, gar-
Williams, R.S., see Feiler, D. (1997) 12 net crystals from stoichiometric melts (1997) 463
Winkeler, L., J. Oebel, R. Miiller and G
Giintherodt, Growth and characterization of Zagalsky, P.F., see Chayen, N.E. (1997) 219
(Y,_ ,P r. JBa,Cu,0 single crystals | (1997) 380 Zeng. H.C., Correlation of PobMoO, crystal im
Witkamp, G.J., see van der Weijden, R.D. (1997) 190 perfections to Czochralski growth process (1997) 136
Woensdregt, C.F., see Pajaczkowska, A. (1997) 387 Zeng, H.C., L.C. Lim, H. Kumagai and M.
Woensdregt, C.F.. H.W.M. Janssen, A. Hirano, Effect of ambient water on crystal
Gloubokov and A. Pajaczkowska, Growth morphology and coloration of lead molyb-
morphology of tetragonal ABCO, com date (1997) 493
pounds: theory and observations on Zhai, G.J., see Mai, Z.H (1997) 512
Czochralski grown crystals 171 (1997) 392 Zhang, W.J., X. Jiang and C.-P. Klages, (001)-
Wu Baichang, see Li Zhengdong 171 (1997) 506 textured growth of diamond films on poly
Wu, L.S., see Mai, Z.H 171 (1997) 512 crystalline diamond substrates by bias-as-
Wu, W.-H., see Sang, W.-B (1997) 45 sisted chemical vapor deposition (1997) 485
Wa, Y:, see Li, BLD. 171 (1997) 307 Zhang, X., see Zhu, J. (1997)
Zheng, K., A.R. Gerson, J. Addai-Mensah and
Xie, X.G., see Chen, H. 171 (1997) 61 R.S.C. Smart, The influence of sodium car-
Xin, Y., P.D. Brown, R.E. Dunin-Borkowski, bonate on sodium aluminosilicate crystalli
C.J. Humphreys, T.S. Cheng and C.T. sation and solubility in sodium aluminate
Foxon, Microstructural characterisation of solutions (1997) 197
GaN(As) films grown on (001) GaP by Zheng, K., see Gerson, A.R. (1997) 209
molecular beam epitaxy 171 (19973)2 1 Zhou, J.M., see Chen, H. (1997) 61
Zhou, S.-Q., see Sang, W.-B. (1997) 45
Yablonski, G.P., see Artemyev, M.V. 171 (19974)4 7 Zhou, Y., see Mao, Y (1997) 548
Yakushev, M.V., see Mullan, C.A. 171 (1997) 415 Zhu, J., J. Chu, X. Zhang and J. Cheng, Study
Yalovets, T.N., see Starostin, M.Yu. l 71 (1997) 119 of zinc inclusions /precipitates in CdZnTe
Yan, Z. and H. Takei, Flux growth of single crystals 171 (19973)5 7
crystals of spinel ZnGa,O, and CdGa,O, 171 (1997) 131 Zou, G.T., see Li, H.D. 171 (19973)0 7
journsnor CRYSTAL
GROWTH
ELSEVIER Journal of Crystal Growth 171 (1997) 620-622
Subject index
Apparatus — of interface control 577
— for crystal growth — of nucleation 538
— — by visual observation of pressure driven growth 591 — of transformation process in underpotential deposition 250
Cellular growth
Lasers, see Device characterization
— of ice 577 Lasers, crystals for
— of succinonitrile—ethanol 548 — nonlinear optics 531
Computer simulation — potassium niobate 501
— of Bridgman thermal stress 361 Lysozyme 226, 554
— of Czochralski growth of germanium 65, 77
— of flow in directional solidification 601
"ert: : : = a a Melt growth technique
— of rutile metalorganic chemical vapor deposition growth 154
sg — by Bridgman—Stockbarger method
— of striations 373
— — of cadmium zinc telluride 357
Constitutional supercooling
— — ofg allium arsenide 361
— of indium antimonide |
— — of germanium 361
— of molybdenum disilicide 166
— of indium antimonide |
Convection 270, 303, 373, 601
— of iron rare earth 125
— of silicon—germanium 56
Dendritic growth
— of zinc telluride 32
— of carbon 111
by Czochralski method
Device characterization
— ofc alcium yttrium aluminate 392
— electronic materials 50
— ofg ermanium 65, 77
— lasers 506
F lead molybdate 136
— quantum dots 61
fF neodymium gallate 109
— quantum wells 349
— quantuan wires 341 strontium lanthanum aluminate 387
Diamond 485 - of strontium lanthanum gallate 387
by floating zone method
Dissolution
— of strontium cuprate chloride 102
— of lysozyme 554
by micro pulling down method
Electronic materials, see Device characterization ~ of garnets 463
Etching by Stepanov (edge-defined film-fed growth) method
fe einiiii — of alumina—zirconia eutectics 119
— — of lithium niobate 477 by submerged heater
Eutectic growth — of germanium 566
age etidints :tibiotiabe 119 by vertical Bridgman method
- — of copper indium diselenide 415
Gallium by vertical gradient freeze
— arsenide 361 — of gallium arsenide 373
— by zone melting
Heat flow — — of silicon—germanium 56
— in ideal gas 288 — theory of impurity distribution 94
Hydrodynamics, see Convection Microgravity, growth under
— of diacetylene-2-methy]-4-nitroaniline 288
Kinetics — of proteins 219
— of growth 154, 174, 183, 209, 538, 559 — theory of dendritic growth 303
Subject index 621
Morphological stability of praseodymium-doped yttrium barium copper oxide 380
’ Hartman—Perdok theory for calcium yttrium aluminate 392 of PrBaCO 409
F gel media 543 of zinc gallate 131
‘ice 577 of zinc telluride 32
' polysilicon 50 — by gel method
protein crystals 559 — of carbohydrate 543
* strontium lanthanum aluminate 387 of potassium tantalate niobate 314
' strontium lanthanum gallate 387 — — of saccharin 543
by low temperature method
Nucleation of cadmium telluride 525
— of diamond 485 — of calcium carbonate 318
— of epsilon-caprolactam 538 — — of lithium iodide 512
— of gibbsite 197 - — of potassium dehydrate phosphate 531
— of molybdenum disilicide 166 by recrystallization
— theory of driving force in multicomponent 259 - of lead iodide 447
Numbers — by Staskum’s method
— Biot 361 of 4-aminobenzophenone 506
Grashof 270, 288, 566 by static growth
Peclet 361 - of lysozyme 554
Prandtl 288 by stoichiometric source
Rayleigh 270, 288, 548 - of zinc selenide 39
Reynolds 548 by top seeded solution
- — of lithium tetraborate 458
Phase diagram — of potassium niobate 501
— of lithium tetraborate 458 by vapor diffusion
- of lysozyme under high pressure 554 ~ — of apocrustacyanin C, 219
— of mercury cadmium telluride 45, 311 Superconductivity materials, high T,
of p-xylene 591 — bulk
Precursor of strontium cuprate chloride 102
— for cancrinite 209 — film
for gallium arsenide by labeled '*C trimethylarsine 21 - — of praseodymium-doped yttrium barium copper oxide 380
— for lysozyme crystallization 226 Surface energy, determination
— for physical vapor deposition 288 — of diastereomeric salt 236
Proteins 219, 226 of epsilon-caprolactam 538
Purification of materials - of molybdenum disilicide 166
— of zinc telluride 32 — of p-xylene 591
Quantum dots, see Device characterization Thin film growth, epitaxy
Quantum wells, see Device characterization — by liquid phase epitaxy
Quantum wires, see Device characterization - — of mercury cadmium telluride 311
by molecular beam epitaxy
Silicon of gallium nitride 321
— germanium 56, 61 — of permalloy 442
Solid growth technique — of silicon germanium 61
by polymorphic technique by vapor phase epitaxy
— of gibbsite 197 — through chemical vapor deposition
by recrystallization ~ — — of carbon 111
— of polysilicon 50 - — — of diamond 485
theory of flow in directional solidification 601 of polysilicon 50
Solution growth technique — theory of 270
by chemostatic method through evaporation and condensation
— of calcite 190 — of gallium nitride 307
by flux method of lead molybdate 493
— of cadmium gallate 131 ~— of mercury cadmium iodine 425
of iridium—tellurium 586 — — of titanium on magnesium oxide 433
of potassium nitrate 174, 183 through laser ablation
of potassium titanyl arsenate 146, 472 — of aluminum nitride 12
of potassium titanyl phosphate 472 — of gallium nitride 12
Subject index
— of indium nitride 12 of lead zirconate titanate 453
— through metalorganic chemical vapor deposition through physical vapor deposition
‘aluminum gallium arsenide 341 — of zinc selenium sulphide 516
gallium arsenide 21, 341, 349 of zinc selenium telluride 516
f gallium indium phosphide 333 - through sputtering
' gallium nitride 27 of lanthanum aluminate 401
lead titanate 453 of strontium titanate 401