ebook img

Journal of Crystal Growth 1997: Vol 171 Index PDF

9 Pages·1997·2.2 MB·English
by  
Save to my drive
Quick download
Download
Most books are stored in the elastic cloud where traffic is expensive. For this reason, we have a limit on daily download.

Preview Journal of Crystal Growth 1997: Vol 171 Index

journscor CRYSTAL GROWTH ELSEVIER Journal of Crystal Growth 171 (1997) 615-619 Author index \ddai-Mensah, J., see Zheng, K. 171 (1997) 197 Chen, H., W.Q. Cheng, X.G. Xie, Q. Huang Anders, M.J., see Bongers, M.M.G. 171 (1997) 333 and J.M. Zhou, Room-temperature lumines- Ariaans, G.J.A., see Strom, C.S. 171 (1997) 236 cence from SiGe self-organized dots 171 (1997) 61 Artemyev, M.V., Yu.P. Rakovich and G.P. Chen, W.C., see Mai, Z.H. 171 (1997) 512 Yablonski, Effect of de electric field on Cheng, J., see Zhu, J. 171 (1997) 357 photoluminescence from quantum-confined Cheng, T.S., see Xin, Y. 171 (1997) 321 PbI, nanocrystals 171 (19974)4 7 Cheng, W.Q., see Chen, H 171 (1997) 61 Ataka, M., see Takano, K.J. 171 (1997) 554 Chong, T.-C., see Beh, C.-Y. 171 (1997) 501 Atuchin, V.V., see Isaenko, L.1 171 (1997) 146 Chu, J., see Li, B. 171 (1997) 311 Chu, J., see Zhu, J 171 (1997) 357 Bao, D. and A. Kuang, Growth of epitaxial and Coelho, A.A., S. Gama, C.A. Ribeiro, N.L. oriented K(Tay ,;Nbp 33/0, thin films by Sanjurjo, C.V. Mohan and H. Kronmiiller, sol—gel method Some experiments on the crystal growth Bastos, P.L., see Bongers, M.M.G. and characterization of Fe,,R, (R = rare Beh, C.-Y., T.-C. Chong, H. Kumagai and M. earth) single crystals by the Bridgman Hirano, Top seeded solution growth of Rb- method 171 (1997) 125 doped KNbO, single crystals (1997) 501 Coriell, S.R., see Sekerka, R.F. 171 (1997) 303 Berglund, K.A., see Pan, B. (1997) 226 Birch, J., see Wang, X. (1997) 401 Bocchi, C., see Sochinskii, N.V. (1997) 425 Das, 1., A. Sharma, A. Kumar and R.S. Lall, Bogunov, V., see Kleptsyn, V. (1997) 109 Non-equilibrium growth patterns of carbo- Bongers, M.M.G., P.L. Bastos, M.J. Anders hydrate and saccharin in gel media 171 (1997) 543 and L.J. Giling, Non-planar crystal growth Davey, R.J. and T. Hirai, The preparation of of Gay 5Ing;P by metalorganic chemical calcium carbonate in an emulsified liquid vapour deposition (1997) 333 membrane 171 (1997) 318 Bouropoulos, N.Ch., C.G. Kontoyannis and P.G. Diéguez, E., see Sochinskii, N.V. 171 (1997) 425 Koutsoukos, Nucleation kinetics of ¢- Dimitrov, N., see Popov, A. 171 (1997) 250 caprolactam melts in the presence of water Dunin-Borkowski, R.E., see Xin, Y. 171 (1997) 32! impurity (1997) 538 Dupret, F., see Van den Bogaert, N. 171 (1997) 65 Brown, P.D., see Xin, Y. (1997) 321 Dupret, F., see Van den Bogaert, N 171 (1997) 77 Buchan, N., see Rosenberger, F. (1997) 270 Campbell, T.A. and J.N. Koster, In situ visual- Endo, S., see Chani, V.I. 171 (1997) 472 ization of constitutional supercooling within Erbil, A., see Nami, Z. 171 (1997) 154 a Bridgman—Stockbarger system (1997) I Casey, S.M., see Mullan, C.A (1997) 415 Chani, V.I., see Yu, Y.M. (1997) 463 Fan, X. and T. Ishigaki, Critical free energy for Chani, V.I., K. Shimamura, S. Endo and T. nucleation from the congruent melt of MoSi, 171 (1997) 166 Fukuda, Growth of mixed crystals of the Feiler, D., R.S. Williams, A.A. Talin, H. Yoon KTiOPO, (KTP) family (1997) 472 and M.S. Goorsky, Pulsed laser deposition Chayen, N.E., E.H. Snell, J.R. Helliwell and of epitaxial AIN, GaN, and InN thin films P.F. Zagalsky, CCD video observation of on sapphire(0001) 171 (1997) 12 microgravity crystallization: apocrusta- Fontecilla~-Camps, J.C., see Hirschler, J. 171 (1997) 559 cyanin C, 171 (1997) 219 Foxon, C.T., see Xin, Y. 171 (1997) 321 Chen, F., see Lu, J.W. 171 (1997) 601 Franse, J.J.M., see Hien, N.T. 171 (1997) 102 616 Author index Frazier, D.O., RJ. Hung, M.S. Paley, B.G Imanieh, M., see Mullan, C.A. 171 (19974)1 5 Penn and Y.T. Long, Buoyancy-driven heat Isaenko, L.IL., A.A. Merkulov, V.1. Tjurikov, transfer during application of a thermal gra- V.V. Atuchin, L.V. Sokolov and E.M. dient for the study of vapor deposition at Trukhanov, Growth and real structure of low pressure using an ideal gas 171 (1997) 288 KTiOAsO, crystals from self-fluxes 171 (1997) 146 Fujioka, K., see Nakatsuka, M. 171 (1997) 531 Ishibashi, T., see Watanabe, N. 171 (1997) 21 Fujita, H., see Nakatsuka, M. 171 (1997) 531 Ishigaki, T., see Fan, X. 171 (1997) 166 Fukuda, T., see Yu, Y.M. 171 (1997) 463 Ito, H., see Watanabe, N. 171 (1997) 21 Fukuda, T., see Chani, V.I. 171 (1997) 472 Furukawa, Y., see Nagashima, K. 171 (1997) 577 Janssen, H.W.M., see Woensdregt, C.F. 171 (1997) 392 Gama, S., see Coelho, A.A. 171 (1997) 125 Jeon, H.L, M.S. Jeong, H.W. Shim, Y.G. Shin, Geertman, R.M., see Strom, C.S. 171 (1997) 236 K.Y. Lim, E.-K. Suh and H.J. Lee, Optical Gerson, A.R., see Zheng, K. 171 (1997) 197 investigation of InGaAs /GaAs heterointer- Gerson, A.R. and K. Zheng, Bayer process faces grown by metalorganic chemical va- plant scale: transformation of sodalite to por deposition 171 (1997) 349 cancrinite 171 (1997) 209 Jeong, M.S., see Jeon, H.I. 171 (1997) 349 Giling, L.J., see Bongers, M.M.G. 171 (1997) 333 Jiang, X., see Zhang, W.J. 171 (1997) 485 Gloubokoy, A., see Pajaczkowska, A. 171 (1997) 387 Jie, W., see Mao, Y. 171 (1997) 548 Gloubokov, A., see Woensdregt, C.F. 171 (1997) 392 Jung, T. and G. Miiller, Amplitudes of doping Gnesin, B.A., see Starostin, M.Yu. 171 (1997) 119 striations: comparison of numerical calcula- Goorsky, M.S., see Feiler, D. 171 (1997) 12 tions and analytical approaches 171 (1997) 373 Guenrikhson, V., see Kleptsyn, V. 171 (1997) 109 Giintherodt, G., see Winkeler, L. 171 (1997) 380 Guo, H.X., see Mai, Z.H. 171 (1997) 512 Kadokura, K. and Y. Takano, Germanium— silicon single crystal growth using an encap- Harada, T. and H. Ohkoshi, Growth and struc- sulant in a silica ampoule 171 (1997) 56 ture of Ti films deposited on chemically Kanabe, T., see Nakatsuka, M. 171 (19975)3 1 polished MgO(100) substrates 171 (1997) 433 Kashchiev, D., see Popov, A. 171 (19972)5 0 Harigae, H., see Takano, K.J. 171 (1997) 554 Kato, H., see Okuno, Y. 171 (1997) 39 Helliwell, J.R., see Chayen, N.E. 171 (1997) 219 Kawamura, Y., see Takano, K.J. 171 (19975)5 4 Helmersson, U., see Wang, X. 171 (1997) 401 Kiely, C.J., see Mullan, C.A. 171 (19974)1 5 Hien, N.T., J.J.M. Franse, J.J.M. Pothuizen, Kipp, S., see Rolfs, J. 171 (19971)7 4 T.W. Li and A.A. Menovsky, Growth and Kipp, S., R. Lacmann and J. Rolfs, Crystalliza- characterisation of bulk Sr,CuO,Cl, single tion of potassium nitrate (KNO,) in aque- crystals 171 (1997) 102 ous solution. Part II. Kinetical studies under Hirai, T., see Davey, R.J. 171 (1997) 318 the influence of additives 171 (1997) 183 Hirano, M., see Zeng, H.C. 171 (1997) 493 Klages, C.-P., see Zhang, W.J. 171 (1997) 485 Hirano, M., see Beh, C.-Y. 171 (1997) 501 Kleptsyn, V., V. Guenrikhson and V. Bogunov, Hirschler, J. and J.C. Fontecilla-Camps, Protein The growth and X-ray investigation of crystal growth rates are face-specifically neodymium gallate as a substrate material modified by structurally related contami- for high-temperature superconductors 171 (1997) 109 nants 171 (1997) 559 Klos, A., see Pajaczkowska, A. 171 (1997) 387 Ho, C.H., see Liao, P.C. 171 (1997) 586 Komatsu, R., see Uda, S. 171 (1997) 458 Holcomb, E.R.C., see Li, J.-S. 171 (1997) 259 Konstantinova, M.A., see Koprinarov, N.S. 171 (1997) 111 Holstein, W.L., Etching study of ferroelectric Kontoyannis, C.G., see Bouropoulos, N.Ch. 171 (1997) 538 microdomains in LiNbO, and MgO:LiNbO, 171 (1997) 477 Koprinarov, N.S., M.A. Konstantinova, G.V. Hu, Y.M., see Huang, J.C.A. 171 (1997) 442 Pchelarov and M.V. Marinov, Carbon Huang Gongfan, see Li Zhengdong 171 (1997) 506 macrostructures obtained at AC arc dis- Huang, J.C.A., T.E. Wang, C.C. Yu, Y.M. Hu, charge 171 (1997) 111 P.B. Lee and M.S. Yang, Epitaxial growth Koster, J.N., see Campbell, T.A. 171 (1997) 1 and characterization of (100) and (110) Koutsoukos, P.G., see Bouropoulos, N.Ch. 171 (1997) 538 permalloy films 171 (1997) 442 Kronmiiller, H., see Coelho, A.A. 171 (1997) 125 Huang, Q., see Chen, H. 171 (1997) 61 Kuang, A., see Bao, D. 171 (1997) 314 Huang, Y.S., see Liao, P.C. 171 (1997) 586 Kumagai, H., see Zeng, H.C. 171 (1997) 493 Humphreys, C.J., see Xin, Y. 171 (1997) 321 Kumagai, H., see Beh, C.-Y. 171 (1997) 501 Hung, R.J., see Frazier, D.O. 171 (1997) 288 Kumar, A., see Das, I. 171 (1997) 543 Author index 617 Lacmann, R., see Rolfs, J. 171 (1997) 174 Menovsky, A.A., see Hien, N.T. 171 (1997) 102 Lacmann, R., see Kipp, S. 171 (1997) 183 Merkulov, A.A., see Isaenko, L.I. 171 (1997) 146 Lall, R.S., see Das, I. 171 (1997) 543 Meyer, S. and A.G. Ostrogorsky, Forced con- Lee, C.-R., S.-J. Son, I.-H. Lee, J.-Y. Leem and vection in vertical Bridgman configuration S.-K. Noh, Growth and characterization of with the submerged heater 171 (1997) 566 GaN epilayers grown at various flow rates Misman, O., see Nami, Z. 171 (1997) 154 of trimetylgallium during growth of nucle- Mohan, C.V., see Coelho, A.A. 171 (1997) 125 ation layers 171 (1997) 27 Mullan, C.A., C.J. Kiely, S.M. Casey, M. Lee, H.J., see Jeon, HI. 171 (1997) 349 Imanieh, M.V. Yakushev and R.D. Tomlin- Lee, I.-H., see Lee, C.-R. 171 (1997) 27 son, A microstructural and compositional Lee, P.B., see Huang, J.C.A. 171 (1997) 442 analysis of CulnSe, ingots grown by the Leem, J.-Y., see Lee, C.-R. 171 (1997) 27 vertical Bridgman technique 171 (1997) 415 Lehoczky, S.L., see Sha, Y.-G. 171 (1997) 516 Miiller, G., see Jung, T. 171 (1997) 373 Leusen, F.J.J., see Strom, C.S. 171 (1997) 236 Miiller, R., see Winkeler, L. 171 (1997) 380 Li, B., J. Chu and D. Tang, Segregation coeffi- Munoz, V., see Sochinskii, N.V. 171 (1997) 425 cients in Te-rich Hg—Cd-Te systems 171 (1997) 311 Li, H., see Lu, P. 171 (1997) 453 Nagashima, K. and Y. Furukawa, Nonequilib- Li, H.D., H.B. Yang, G.T. Zou, S. Yu, J.S. Lu, rium effect of anisotropic interface kinetics S.C. Qu and Y. Wu, Formation and photo- on the directional growth of ice crystals 171 (1997) 577 luminescence spectrum of w-GaN powder 171 (1997) 307 Nakatsuka, M., K. Fujioka, T. Kanabe and H Li, J.-S., K. Nishioka and E.R.C. Holcomb, Fujita, Rapid growth over 50 mm/day of Thermodynamic analysis of the driving force water-soluble KDP crystal 171 (1997) 531 for forming a critical nucleus in multicom- Nakhodkin, N.G. and T.V. Rodionova, The ponent nucleation 171 (1997) 259 mechanism of secondary grain growth in Li, T.W., see Hien, N.T. 171 (1997) 102 polysilicon films 171 (1997) 50 Li Zhengdong, Wu Baichang, Su Genbo and Nami, Z., O. Misman, A. Erbil and G.S. May, Huang Gongfan, Crystal growth and optical Computer simulation study of the MOCVD properties of 4-aminobenzophenone (ABP) 171 (1997) 506 growth of titanium dioxide films 171 (1997) 154 Liao, P.C., C.H. Ho, Y.S. Huang and K.K. Nashelsky, A.Ya. and E.O. Pulner, A volatile Tiong, Preparation and characterization of impurity distribution over the length of a pyrite-like single crystal phase in the Ir—-Te crystal grown via the method of directional system 171 (1997) 586 melt crystallization 171 (1997) 94 Lim, K.Y., see Jeon, H.I. 171 (1997) 349 Ni, W.-X., see Wang, X. 171 (1997) 401 Lim, L.C., see Zeng, H.C. 171 (1997) 493 Nishioka, K., see Li, J.-S. 171 (1997) 259 Liu, J., see Mao, Y. 171 (1997) 548 Noh, S.-K., see Lee, C.-R. 171 (1997) 27 Long, Y.T., see Frazier, D.O. 171 (1997) 288 Lu, J.S., see Li, H.D. 171 (1997) 307 Lu, J.W. and F. Chen, Assessment of mathe- Oda, O., see Seki, Y. 171 (1997) 32 matical models for the flow in directional Oebel, J., see Winkeler, L. 171 (1997) 380 solidification 171 (1997) 601 Ogura, M., see Wang, X.-L. 171 (1997) 341 , P., H. Li, S. Sun and B. Tuttle, Novel Ohkoshi, H., see Harada, T. 171 (1997) 433 single-solid-source metalorganic chemical Okuno, Y., H. Kato and M. Sano, Stoichiome- vapor processing of PT and PZT thin films 171 (1997) 453 try control of ZnSe crystals 171 (1997) 39 Ostrogorsky, A.G., see Meyer, S. 171 (1997) 566 Ouazzani, J., see Rosenberger, F. 171 (1997) 270 Ma, W.Y., see Mai, Z.H. 171 (1997) 512 Mai, Z.H., W.C. Chen, H.X. Guo, W.Y. Ma, Pajaczkowska, A., A. Gloubokov, A. Klos and G.J. Zhai and L.S. Wu, Study of a-LilO, C.F. Woensdregt, Czochralski growth of single crystals grown in space 171 (1997) 512 SrLaAlO, and SrLaGaO, single crystals and Mao, Y., J. Liu, W. Jie and Y. Zhou, Effect of its implications for the crystal morphology 171 (1997) 387 the accelerated crucible rotation technique Pajaczkowska, A., see Woensdregt, C.F. 171 (1997) 392 on dendritic growth morphology 171 (1997) 548 Palazogli, A., see Young, G.L. 171 (1997) 361 Marin, C., see Sochinskii, N.V. 171 (1997) 425 Paley, M.S., see Frazier, D.O. 171 (1997) 288 Marinov, M.V., see Koprinarov, N.S. 171 (1997) 111 Pan, B. and K.A. Berglund, Time-resolved flu- Matsuhata, H., see Wang, X.-L. 171 (1997) 341 orescence and anisotropy of covalently cou- May, G.S., see Nami, Z. 171 (1997) 154 pled 1l-pyrenebutyric acid for monitoring McDonald, K.A., see Young, G.L. 171 (1997) 361 the crystallization conditions of lysozyme 171 (1997) 226 McFadden, G.B., see Sekerka, R.F. 171 (1997) 303 Pchelarov, G.V., see Koprinarov, N.S. 171 (1997) 111 618 Author index Penn, B.G., see Frazier, D.O. (1997) 288 Strom, C.S., F.J.J. Leusen, R.M. Geertman and Popov, A., D. Kashchiev, N. Dimitrov and 7 G.J.A. Ariaans, forphology of the diastere Vitanov, Structural transformation process omeric salt of the alkaloid ephedrine and a in underpotential monolayer adsorbates: two chlorine substituted cyclic phosphoric acid types of adsorption sites on the electrode (1997) 250 (CLINAM) 171 (1997) 236 Pothuizen, J.J.M., see Hien, N.T. (1997) 102 Su, C.-H., see Sha, Y.-G 171 (1997) 516 Pulner, E.O., see Nashelsky, A.Ya. (1997) 94 Su Genbo, see Li Zhengdong 171 (1997) 506 Suh, E.-K., see Jeon, H.1. 171 (1997) 349 Qu, S.C., see Li, H.D. (1997) Sun, S., see Lu, P. 171 (1997) 453 Tabarrok, B.., see Ye, X. Rakovich, Yu.P., see Artemyev, M.V. (1997) Tagami, M. and Y. Shiohara, Control of Pr for Ribeiro, C.A., see Coelho, A.A. (1997) Ba substitution in PBCO single crystals by Rodionova, T.V., see Nakhodkin, N.G. (1997) the crystal pulling method 171 (1997) 409 Rojo, J.C., see Sochinskii, N.V. (1997) Takano, K.J., H. Harigae, Y. Kawamura and M. Rolfs, J., R. Lacmann and S. Kipp, Crystalliza Ataka, Effect of hydrostatic pressure on the tion of potassium nitrate (KNO,) in aque crystallization of lysozyme based on in situ ous solution. I. Growth kinetics of the pure observations 171 (1997) 554 system (1997) Takano, K.J. and M. Wakatsuki, Development of an optical liquid high pressure cell and Rolfs, J., see Kipp, S. 1 (1997) Rosenberger, F., J. Ouazzani, I. Viohl and N its application to visual observation of pres- Buchan, Physical vapor transport revisited (1997) 270 sure-driven crystal growth I 71 (1997) 59] Takano, Y., see Kadokura, K. l 71 (1997) 56 Takayama, K.., see Uda, S. l 71 (1997) 458 Sang, W.-B., S.-Q. Zhou and W.-H. Wu, Inves Takei. H., see Yan, Z. | l (1997) 131 tigation of equilibrium partial pressures over Talin, A.A., see Feiler, D. 17] (1997) 12 (Hg,_ ,Cd,),Te,_, (y < 0.5) melts (1997) Tang, D., see Li, B. 171 (1997) 311 Sanjurjo, N.L., see Coelho, A.A. (1997) 12 Tiong, K.K., see Liao, P.C 71 (1997) 586 Sano, M., see Okuno, Y. (1997) Tjurikov, V.I., see Isaenko, L.I. 171] (1997) 146 Sato, K., see Seki, Y. (1997) Tomlinson, R.D., see Mullan, C.A. 171 (1997) 415 Sekerka, R.F., S.R. Coriell and G.B. McFad Trukhanov, E.M., see Isaenko, L.I. 171 (1997) 146 den, The effect of container size on den Tuttle, B., see Lu, P. 171 (1997) 453 dritic growth in microgravity i Seki, Y., K. Sato and O. Oda, Solution growth Uda, S., R. Komatsu and K. Takayama, Con- of ZnTe single crystals by the vertical gruent composition and solid solution range Bridgman method using a_ hetero-seeding of Li,B,O, crystal (1997) 458 technique (1997) Sha, Y.-G., C.-H. Su and §.L. Lehoezky, Mass Van den Bogaert, N. and F. Dupret, Dynamic flux of ZnSe,_,S, and ZnSe,_,Te, by global simulation of the Czochralski pro- physical vapor transport (1997) 516 cess. I. Principles of the method (1997) 65 Sharma, A., see Das, I. (1997) 543 Van den Bogaert, N. and F. Dupret, Dynamic Shim, H.W., see Jeon, H.I. (1997) 349 global simulation of the Czochralski pro- Shimamura, K., see Yu, Y.M. (1997) 463 cess. II. Analysis of the growth of a germa- Shimamura, K., see Chani, V.I. | (1997) 472 nium crystal (1997) 77 Shin, Y.G., see Jeon, H.1 (1997) 349 Van der Heijden, A.E., see van der Weijden, Shiohara, Y., see Tagami, M. (1997) 409 R.D. (1997) 190 Smart, R.S.C., see Zheng, K. (1997) 197 Van der Weijden, R.D., A.E. van der Heijden, Snell, E.H., see Chayen, N.E (1997) 219 G.J. Witkamp and G.M. van Rosmalen, The Sochinskii, N.V., C. Marin, J.C. Rojo, V. influence of total calcium and total carbon- Mujiioz, C. Bocchi and E. Diéguez, Vapor ate on the growth rate of calcite (1997) 190 phase epitaxy of Hg,_ ,Cd,I, layers on Van Rosmalen, G.M., see van der Weijden, CdTe substrates (1997) 425 R.D. (1997) 190 Sokolov, L.V. , see Isaenko, L.1. (1997) 146 Viohl, I., see Rosenberger, F. (1997) 270 Son, S.-J. , see Lee, C.-R. (1997) 27 Vitanovy, T., see Popov, A. (1997) 250 Starostin, M.Yu., B.A. Gnesin and T.N. Yalovets, Microstructure and crystallo Wakatsuki, M., see Takano, K.J. (1997) 591 graphic phase textures of the alumina Walsh, D., see Ye, X. (1997) 525 zirconia eutectics 1 (1997) 119 Wang, T.E., see Huang, J.C.A. (1997) 442 Author index 619 Wang, X., U. Helmersson, J. Birch and W.-X Yang, H.B., see Li, H.D. 171 (19973)0 7 Ni, High resolution X-ray diffraction map- Yang, M.S., see Huang, J.C.A. 171 (1997) 442 ping studies on the domain structure of Ye, X., B. Tabarrok and D. Walsh. Tempera LaAlO, single crystal substrates and its in ture dependence of associated liquid species, fluence on SrTiO, film growth (1997) 401 heat capacity and enthalpy of mixing for Wang, X.-L., M. Ogura and H. Matsuhata, CdTe solution growth 171 (1997) 525 Fabrication of highly uniform AlGaAs Yoon, H., see Feiler, D. 171 (1997) GaAs quantum wire superlattices by flow Young, G.L., K.A. McDonald and A. Palazogli, rate modulation epitaxy on V-grooved sub- Thermal stress analysis of crystal growth in strates (1997) 341 a horizontal Bridgman furnace (1997) 361 Watanabe, N., H. Ito and T. Ishibashi, Mecha- Yu, C.C., see Huang, J.C.A. (1997) 442 nism of carbon incorporation into GaAs Yu, S., see Li, H.D. (1997) 307 studied using isotopically labeled trimeth- Yu, Y.M., V.I. Chani, K. Shimamura and T. ylarsine (1997) 21 Fukuda, Growth of Ca,(Li,Nb,Ga);O,, gar- Williams, R.S., see Feiler, D. (1997) 12 net crystals from stoichiometric melts (1997) 463 Winkeler, L., J. Oebel, R. Miiller and G Giintherodt, Growth and characterization of Zagalsky, P.F., see Chayen, N.E. (1997) 219 (Y,_ ,P r. JBa,Cu,0 single crystals | (1997) 380 Zeng. H.C., Correlation of PobMoO, crystal im Witkamp, G.J., see van der Weijden, R.D. (1997) 190 perfections to Czochralski growth process (1997) 136 Woensdregt, C.F., see Pajaczkowska, A. (1997) 387 Zeng, H.C., L.C. Lim, H. Kumagai and M. Woensdregt, C.F.. H.W.M. Janssen, A. Hirano, Effect of ambient water on crystal Gloubokov and A. Pajaczkowska, Growth morphology and coloration of lead molyb- morphology of tetragonal ABCO, com date (1997) 493 pounds: theory and observations on Zhai, G.J., see Mai, Z.H (1997) 512 Czochralski grown crystals 171 (1997) 392 Zhang, W.J., X. Jiang and C.-P. Klages, (001)- Wu Baichang, see Li Zhengdong 171 (1997) 506 textured growth of diamond films on poly Wu, L.S., see Mai, Z.H 171 (1997) 512 crystalline diamond substrates by bias-as- Wu, W.-H., see Sang, W.-B (1997) 45 sisted chemical vapor deposition (1997) 485 Wa, Y:, see Li, BLD. 171 (1997) 307 Zhang, X., see Zhu, J. (1997) Zheng, K., A.R. Gerson, J. Addai-Mensah and Xie, X.G., see Chen, H. 171 (1997) 61 R.S.C. Smart, The influence of sodium car- Xin, Y., P.D. Brown, R.E. Dunin-Borkowski, bonate on sodium aluminosilicate crystalli C.J. Humphreys, T.S. Cheng and C.T. sation and solubility in sodium aluminate Foxon, Microstructural characterisation of solutions (1997) 197 GaN(As) films grown on (001) GaP by Zheng, K., see Gerson, A.R. (1997) 209 molecular beam epitaxy 171 (19973)2 1 Zhou, J.M., see Chen, H. (1997) 61 Zhou, S.-Q., see Sang, W.-B. (1997) 45 Yablonski, G.P., see Artemyev, M.V. 171 (19974)4 7 Zhou, Y., see Mao, Y (1997) 548 Yakushev, M.V., see Mullan, C.A. 171 (1997) 415 Zhu, J., J. Chu, X. Zhang and J. Cheng, Study Yalovets, T.N., see Starostin, M.Yu. l 71 (1997) 119 of zinc inclusions /precipitates in CdZnTe Yan, Z. and H. Takei, Flux growth of single crystals 171 (19973)5 7 crystals of spinel ZnGa,O, and CdGa,O, 171 (1997) 131 Zou, G.T., see Li, H.D. 171 (19973)0 7 journsnor CRYSTAL GROWTH ELSEVIER Journal of Crystal Growth 171 (1997) 620-622 Subject index Apparatus — of interface control 577 — for crystal growth — of nucleation 538 — — by visual observation of pressure driven growth 591 — of transformation process in underpotential deposition 250 Cellular growth Lasers, see Device characterization — of ice 577 Lasers, crystals for — of succinonitrile—ethanol 548 — nonlinear optics 531 Computer simulation — potassium niobate 501 — of Bridgman thermal stress 361 Lysozyme 226, 554 — of Czochralski growth of germanium 65, 77 — of flow in directional solidification 601 "ert: : : = a a Melt growth technique — of rutile metalorganic chemical vapor deposition growth 154 sg — by Bridgman—Stockbarger method — of striations 373 — — of cadmium zinc telluride 357 Constitutional supercooling — — ofg allium arsenide 361 — of indium antimonide | — — of germanium 361 — of molybdenum disilicide 166 — of indium antimonide | Convection 270, 303, 373, 601 — of iron rare earth 125 — of silicon—germanium 56 Dendritic growth — of zinc telluride 32 — of carbon 111 by Czochralski method Device characterization — ofc alcium yttrium aluminate 392 — electronic materials 50 — ofg ermanium 65, 77 — lasers 506 F lead molybdate 136 — quantum dots 61 fF neodymium gallate 109 — quantum wells 349 — quantuan wires 341 strontium lanthanum aluminate 387 Diamond 485 - of strontium lanthanum gallate 387 by floating zone method Dissolution — of strontium cuprate chloride 102 — of lysozyme 554 by micro pulling down method Electronic materials, see Device characterization ~ of garnets 463 Etching by Stepanov (edge-defined film-fed growth) method fe einiiii — of alumina—zirconia eutectics 119 — — of lithium niobate 477 by submerged heater Eutectic growth — of germanium 566 age etidints :tibiotiabe 119 by vertical Bridgman method - — of copper indium diselenide 415 Gallium by vertical gradient freeze — arsenide 361 — of gallium arsenide 373 — by zone melting Heat flow — — of silicon—germanium 56 — in ideal gas 288 — theory of impurity distribution 94 Hydrodynamics, see Convection Microgravity, growth under — of diacetylene-2-methy]-4-nitroaniline 288 Kinetics — of proteins 219 — of growth 154, 174, 183, 209, 538, 559 — theory of dendritic growth 303 Subject index 621 Morphological stability of praseodymium-doped yttrium barium copper oxide 380 ’ Hartman—Perdok theory for calcium yttrium aluminate 392 of PrBaCO 409 F gel media 543 of zinc gallate 131 ‘ice 577 of zinc telluride 32 ' polysilicon 50 — by gel method protein crystals 559 — of carbohydrate 543 * strontium lanthanum aluminate 387 of potassium tantalate niobate 314 ' strontium lanthanum gallate 387 — — of saccharin 543 by low temperature method Nucleation of cadmium telluride 525 — of diamond 485 — of calcium carbonate 318 — of epsilon-caprolactam 538 — — of lithium iodide 512 — of gibbsite 197 - — of potassium dehydrate phosphate 531 — of molybdenum disilicide 166 by recrystallization — theory of driving force in multicomponent 259 - of lead iodide 447 Numbers — by Staskum’s method — Biot 361 of 4-aminobenzophenone 506 Grashof 270, 288, 566 by static growth Peclet 361 - of lysozyme 554 Prandtl 288 by stoichiometric source Rayleigh 270, 288, 548 - of zinc selenide 39 Reynolds 548 by top seeded solution - — of lithium tetraborate 458 Phase diagram — of potassium niobate 501 — of lithium tetraborate 458 by vapor diffusion - of lysozyme under high pressure 554 ~ — of apocrustacyanin C, 219 — of mercury cadmium telluride 45, 311 Superconductivity materials, high T, of p-xylene 591 — bulk Precursor of strontium cuprate chloride 102 — for cancrinite 209 — film for gallium arsenide by labeled '*C trimethylarsine 21 - — of praseodymium-doped yttrium barium copper oxide 380 — for lysozyme crystallization 226 Surface energy, determination — for physical vapor deposition 288 — of diastereomeric salt 236 Proteins 219, 226 of epsilon-caprolactam 538 Purification of materials - of molybdenum disilicide 166 — of zinc telluride 32 — of p-xylene 591 Quantum dots, see Device characterization Thin film growth, epitaxy Quantum wells, see Device characterization — by liquid phase epitaxy Quantum wires, see Device characterization - — of mercury cadmium telluride 311 by molecular beam epitaxy Silicon of gallium nitride 321 — germanium 56, 61 — of permalloy 442 Solid growth technique — of silicon germanium 61 by polymorphic technique by vapor phase epitaxy — of gibbsite 197 — through chemical vapor deposition by recrystallization ~ — — of carbon 111 — of polysilicon 50 - — — of diamond 485 theory of flow in directional solidification 601 of polysilicon 50 Solution growth technique — theory of 270 by chemostatic method through evaporation and condensation — of calcite 190 — of gallium nitride 307 by flux method of lead molybdate 493 — of cadmium gallate 131 ~— of mercury cadmium iodine 425 of iridium—tellurium 586 — — of titanium on magnesium oxide 433 of potassium nitrate 174, 183 through laser ablation of potassium titanyl arsenate 146, 472 — of aluminum nitride 12 of potassium titanyl phosphate 472 — of gallium nitride 12 Subject index — of indium nitride 12 of lead zirconate titanate 453 — through metalorganic chemical vapor deposition through physical vapor deposition ‘aluminum gallium arsenide 341 — of zinc selenium sulphide 516 gallium arsenide 21, 341, 349 of zinc selenium telluride 516 f gallium indium phosphide 333 - through sputtering ' gallium nitride 27 of lanthanum aluminate 401 lead titanate 453 of strontium titanate 401

See more

The list of books you might like

Most books are stored in the elastic cloud where traffic is expensive. For this reason, we have a limit on daily download.