Journal of Crystal Growth 1997: Vol 170 Index

16 Pages·1997·4.9 MB·English

JOURNAL OF CRYSTAL
GROWTH
ELSEVIER Journal of Crystal Growth 170 (1997) 822-833
Author index
Adam, D., see Ortion, J.M. 170 (19976)7 4 Bastos, P.L., M.J. Anders, M.M.G. Bongers,
Adler, F., see Geiger, M. 170 (19975)5 8 P.R. Hageman and L.J. Giling, Temperature
Ahern, B.S., see Weyburne, D.W. 170 (1997) 77 dependence on the emerging crystal habit of
Aiga, M., see Takiguchi, T. 170 (19977)0 5 GalInP deposited on nonplanar {001}GaAs
Aina, L., see Thompson, A.G. 170 (1997) 92 substrates 170 (19977)1 0
Alexander, W.B., see Wickenden, A.E. 170 (19973)6 7 Bauknecht, A., see Geiger, M. 170 (1997) 558
Ambacher, O., see Fischer, R.A. 170 (19971)3 9 Baumeister, H., see Keidler, M. 170 (1997) 161
Ambacher, O., R. Dimitrov, D. Lentz, T. Metz- Beaumont, B., M. Vaille, T. Boufaden, B.
ger, W. Rieger and M. Stutzmann, Growth el Jani and P. Gibart, High quality GaN
of GaN/AIN and AlGaN by MOCVD us- grown by MOVPE 170 (19973)1 6
ing triethylgallium and _ tritertiarybutylalu- Beccard, R., G. Lengeling, D. Schmitz, Y. Gi-
minium 170 (1997) 335 gase and H. Jirgensen, Replacement of hy-
Anand, S., see Carlsson, N. 170 (1997) 127 drides by TBAs and TBP for the growth of
Anders, M.J., see Hageman, P.R. 170 (1997) 270 various III—-V materials in production scale
Anders, M.J., see Bastos, P.L. 170 (19977)1 0 MOVPE reactors 170 (1997) 97
Ando, H., Recent progress in multi-wafer CBE Becht, M., F. Wang, J.G. Wen and T. Mor-
systems 170 (1997) 16 ishita, Evolution of the microstructure of
Ando, H., see Ando, S. 170 (19977)1 9 oxide thin films 170 (1997) 799
Ando, S., N. Kobayashi, H. Ando and Y. Beckham, C., see Thompson, A.G. 170 (1997) 92
Horikoshi, Hexagonal facet laser with opti- Behet, M., see Tiimmler, J. 170 (1997) 772
cal waveguides grown by flow-rate modula- Behet, M., see von Eichel-Streiber, C. 170 (1997) 783
tion epitaxy 170 (19977)1 9 Behres, A., H. Werner, A. Kohl and K. Heime,
Aoki, M., see Suzuki, M. 170 (1997) 661 InP growth on ion-implanted InP substrate:
Aoki, S., see Funato, M. 170 (1997) 276 a new method to achieve selective area
Aoyagi, Y., see Tanaka, S. 170 (1997) 329 MOVPE 170 (1997) 655
Arai, T., J. Hidaka, H. Tokunaga and K. Mat- Behres, A., see Lakner, H. 170 (1997) 732
sumoto, Highly uniform growth in a low- Benndorf, G., see Kirpal, G. 170 (1997) 167
pressure MOVPE multiple wafer system 170 (1997) 88 Bergunde, T., M. Dauelsberg, L. Kadinski,
Arakawa, Y., see Kitamura, M. 170 (1997) 563 Yu.N. Makarov, M. Weyers, D. Schmitz, G.
Arés, R., S.P. Watkins and C.A. Tran, Break- Strauch and H. Jiirgensen, Heat transfer and
down of self-limiting behaviour in InAs/ mass transport in a multiwafer MOVPE re-
GaAs heterostructures grown by atomic actor: modelling and experimental studies 170 (1997) 66
layer epitaxy 170 (1997) 574 Bergunde, T., see Kurpas, P. 170 (1997) 203
Arés, R., see Watkins, S.P. 170 (1997) 788 Bertone, D., A. Bricconi, R.Y. Fang, L. Grebo-
Armour, E., see Thompson, A.G. 170 (1997) 92 rio, G. Magnetti, M. Meliga and R. Paoletti,
Ayers, J.E., see Bao, K.X. 170 (1997) 497 MOCVD regrowth of semi-insulating InP
and p—n junction blocking layers around
laser active stripes 170 (19977)1 5
Baker, J.E., see Islam, M.R. 170 (19974)1 3 Bertram, F., see Heinrichsdorff, F. 170 (1997) 568
Bao, K.X., R. Mo, X.G. Zhang, S. Kalisetty, M. Bevan, M.J., H.D. Shih, H.Y. Liu, A.J. Syllaios
Gokhale, J. Robinson, G. Zhao, J.E. Ayers and W.M. Duncan, Growth of high quality
and F.C. Jain, Compositional control of ZnSe on closely lattice-matched InGaAs
Cd,.Zn,_,Se grown by _ photoassisted substrates by metal organic chemical vapor
organometallic vapor phase epitaxy 170 (1997) 497 deposition 170 (1997) 467
Basilavecchia, M., see Gurskii, A.L. 170 (1997) 533 Beyer, R., see Présch, G. 170 (1997) 537
Baskar, K., see Soga, T. 170 (1997) 447 Bhat, I.B., see Dakshina Murthy, S. 170 (1997) 193
Author index
Bhattacharya, A., see Mawst, L.J. 170 (1997) 383 erostructures for use in light-emitting de-
Biasiol, G., E. Martinet, F. Reinhardt, A. vices 170 (1997) 595
Gustafsson and E. Kapon, Low-pressure Chen, C., see Chen, S. 170 (1997) 433
OMCVD growth of AlGaAs vertical quan- Chen, J.C., see Huang, Z.C. 170 (1997) 362
tum wells on non-planar substrates 170 (19976)0 0 Chen, J.C., see Lee, K.-J. 170 (1997) 757
Biasiol, G., see Reinhardt, F. 170 (19976)8 9 Chen, L., see Chen, S. 170 (1997) 433
Bimberg, D., see Dadgar, A. 170 (19971)7 3 Chen, S., B. Liu, B. Wang, M. Huang, L. Chen
Bimberg, D., see Heinrichsdorff, F. 170 (19975)6 8 and C. Chen, GaAs—InP heteroepitaxy and
Bimberg, D., see Kappelt, M. 170 (19975)9 0 GaAs—InP MESFET fabrication by MOVPE 170 (1997) 433
Biwa, G., see Yaguchi, H. 170 (19973)5 3 Chen, Y.H., C.J. Wilkinson, J. Woodhead,
Blumberg, R., see Kastner, M.J. 170 (19971)8 8 J.P.R. David, C.C. Button and P.N. Robson,
Blumberg, R., see Hahn, B. 170 (19974)7 2 Polarisation characteristics of visible VC-
Bolay, H., see Scholz, F. 170 (19973)2 1 SELs 170 (1997) 394
Bolognesi, C.R., see Watkins, S.P. 170 (19977)8 8 Chen, Y.H., see Roberts, J.S. 170 (1997) 621
Bongartz, M., see Hartmann, A. 170 (19976)0 5 Cheng, C.-C., see Liu, W.-C. 170 (1997) 438
Bongers, M.M.G., see Bastos, P.L. 170 (19977)1 0 Chichibu, S., see Kamata, A. 170 (1997) 518
Booker, G.R., M. Daly, P.C. Klipstein, M. Christen, J., see Heinrichsdorff, F. 170 (1997) 568
Lakrimi, T.F. Kuech, Jiang Li, $.G. Lyapin, Chun, Y.S., H. Murata, I.H. Ho, T.C. Hsu and
N.J. Mason, I.J. Murgatroyd, J.C. Portal, G.B. Stringfellow, Use of V/III ratio to
R.J. Nicholas, D.M. Symons, P. Vicente produce heterostructures in ordered GalInP 170 (1997) 263
and P.J. Walker, Growth of InAs/GaSb Chunggaze, M., see O’Brien, P. 170 (1997) 23
strained layer superlattices by MOVPE. III. Clark, A., R.J. Egan and C. Jagadish, Design
Use of UV absorption to monitor alkyl sta- and optimisation of Al,Ga,_,As/
bility in the reactor 170 (19977)7 7 A! .Ga,_,As multilayer structures for visi-
Born, E., see Fischer, R.A. 170 (19971)3 9 ble wavelength applications 170 (19974)2 4
Botez, D., see Mawst, L.J. 170 (19973)8 3 Cole-Hamilton, D.J., see Pickett, N.L. 170 (19974)7 6
Boufaden, T., see Beaumont, B. 170 (19973)1 6 Cole-Hamilton, D.J., see Fan, G.H. 170 (19974)8 5
Bouix, J., see Thévenot, V. 170 (19972)5 1 Colpitts, T., see Venkatasubramanian, R. 170 (19978)1 7
Bricconi, A., see Bertone, D. 170 (19977)1 5 Cordier, Y., see Ortion, J.M. 170 (19976)7 4
Bromley, P.A., see Wood, A.K. 170 (19971)3 2 Coulas, D., see Maigné, P. 170 (19977)4 3
Brunner, F., see Kurpas, P. 170 (19974)4 2 Crawley, J.A., see Zhang, X. 170 (1997) 83
Bruno, G., M. Losurdo and P. Capezzuto, On Crawley, J.A., see Van der Stricht, W. 170 (19973)4 4
the use of remote RF plasma source to Curtis, A.P., see Islam, M.R. 170 (19974)1 3
enhance III-V MOCVD technology 170 (19973)0 1
Bryce, J.E., see Watkins, S.P. 170 (19977)8 8
Bugge, F., see Knauer, A. 170 (19972)8 1 Dadgar, A., L. Kohne, J.Y. Hyeon, T. Grunde-
Bullough, T.J., see Westwater, S.P. 170 (19977)5 2 mann, O. Stenzel, M. Strassburg, M. Kut-
Burchard, A., see Lindner, A. 170 (19972)8 7 tler, R. Heitz, D. Bimberg and H. Schu-
Burghardt, H., see Présch, G. 170 (19975)3 7 mann, 4d- and 5d-transition metal acceptor
Button, C.C., see Chen, Y.H. 170 (19973)9 4 doping of InP 170 (1997) 173
Daguet, C., see Silvestre, L. 170 (1997) 639
Capezzuto, P., see Bruno, G. 170 (1997) 301 Dakshina Murthy, S. and I.B. Bhat, In situ
Capik, R.J., see Wajid, A. 170 (1997) 237 monitoring of CdTe nucleation on GaAs
Carlsson, N., see Seifert, W. 170 (1997) 39 (100) using spectroscopic ellipsometry 170 (19971)9 3
Carlsson, N., S. Anand, S.-B. Carlsson, B. Daly, M., see Booker, G.R. 170 (19977)7 7
Gustafson, P. Omling, P. Ramvall, L. Dauelsberg, M., see Bergunde, T. 170 (1997) 66
Samuelson, W. Seifert and Q. Wang, David, J.P.R., see Chen, Y.H. 170 (19973)9 4
MOVPE growth of InP/GalInAs_ and David, J.P.R., see Sale, T.E. 170 (19973)9 9
GaAs /GalInP heterostructures for electronic David, J.P.R., see Roberts, J.S. 170 (19976)2 1
transport applications 170 (19971)2 7 Deicher, M., see Lindner, A. 170 (19972)8 7
Carlsson, S.-B., see Carlsson, N. 170 (19971)2 7 Delprat, D., see Silvestre, L. 170 (19976)3 9
Carr, N., see Wood, A.K. 170 (19971)3 2 Delprat, D., see Zimmermann, G. 170 (19976)4 5
Case, F.C., see Mitra, P. 170 (19975)4 2 Demeester, P., see Zhang, X. 170 (1997) 83
Cerva, H., see Kappelt, M. 170 (19975)9 0 Demeester, P., see Van der Stricht, W. 170 (19973)4 4
Champagne, M., see Ortion, J.M. 170 (19976)7 4 Demeester, P., see D’Hondt, M. 170 (19976)1 6
Chelakara, R.V., P.A. Grudowski and R.D. Demeester, P., see Vanderbauwhede, W. 170 (19977)3 8
Dupuis, Design and growth of InAlAs /In- DenBaars, S.P., see Kapolnek, D. 170 (19973)4 0
GaAlAs | strained-superlattice-barrier _het- DenBaars, S.P., see Keller, S. 170 (19973)4 9
824 Author index
DeSisto, W.J. and B.J. Rappoli, In-line UV Franke, D. and H. Roehle, Highly reproducible
spectroscopy of YBa,Cu,0, MOCVD pre- and defect-free MOVPE overgrowth of In-
cursors 170 (1997) 242 GaAsP-based DFB gratings 170 (1997) 113
Detchprohm, T., see Ohuchi, Y. 170 (1997) 325 Frankowsky, G., see Ottenwalder, D. 170 (1997) 695
Deufel, M., see Hahn, B. 170 (1997) 472 Franzheld, R., see Kirpal, G. 170 (1997) 167
D’Hondt, M., I. Moerman and P. Demeester, Freitag, S., see Pohl, U.W. 170 (1997) 144
Characterisation of 2% mismatched InGaAs Freitas Jr., J.A., see Wickenden, A.E. 170 (1997) 367
and InAsP layers, grown on different buffer Fujii, K., K. Shimoyama, N. Hosoi, K. Kiyomi,
layers and at different growth temperatures 170 (19976)1 6 A. Yamauchi and H. Gotoh, Dependence of
Dieker, Ch., see Hartmann, A. 170 (19976)0 5 deposition selectivity for MOVPE of Al-
Dimitrov, R., see Ambacher, O. 170 (19973)3 5 GaAs using HCl gas on the orientation of
Dornen, A., see Scholz, F. 170 (19973)2 1 the substrate and the orientation of the stripe
Drews, D., see Schneider, A. 170 (19977)6 7 of SiN, masks 170 (19976)7 9
Drigo, A.V., see Mazzer, M. 170 (19975)5 3 Fujii, T., see Ekawa, M. 170 (19976)8 5
Druilhe, R., see Tromson-Carli, A. 170 (19975)4 9 Fujita, Sg., see Funato, M. 170 (19972)7 6
Duan, 5.-k. and D.-c. Lu, Phase diagrams for Fujita, Sg., see Ogata, K.-i. 170 (19975)0 7
the MOVPE growth of ZnTe and ZnSeTe 170 (19975)1 4 Fujita, Sz., see Funato, M. 170 (19972)7 6
Duc, T.-M., see Thévenot, V. 170 (19972)5 1 Fujita, Sz., see Ogata, K.-i. 170 (19975)0 7
Dumont, H., see Thévenot, V. 170 (19972)5 1 Fukui, T., see Hara, S. 170 (19975)7 9
Duncan, W.M., see Bevan, M.J. 170 (19974)6 7 Fukui, T., see Kumakura, K. 170 (19977)0 0
Dupuis, R.D., see Islam, M.R. 170 (19974)1 3 Funato, M., S. Aoki, Sz. Fujita and Sg. Fujita,
Dupuis, R.D., see Chelakara, R.V. 170 (19975)9 5 Initial growth behavior of GaAs on ZnSe in
Duschl, R., see Kastner, M.J. 170 (19971)8 8 MOVPE 170 (1997) 276
Dwir, B., see Reinhardt, F. 170 (19976)8 9
Garcia, J.C., see Ortion, J.M. 170 (1997) 674
Gardner, N.F., see Islam, M.R. 170 (19974)1 3
Egan, R.J., see Clark, A. 170 (1997) 424
Gebhardt, W., see Kastner, M.J. 170 (1997) 188
Eisenbach, A., A. Goldhorn, E. Kuphal and K.
Gebhardt, W., see Hahn, B. 170 (1997) 472
Mause, MOVPE growth for an integrated
Geiger, M., A. Bauknecht, F. Adler, H.
InGaAs/InP PIN-HBT receiver using Zn-
doped p*-InGaAs layers 170 (19974)5 1 Schweizer and F. Scholz, Observation of
the 2D-3D growth mode transition in the
Ekawa, M., T. Fujii and T. Tanahashi, Effect of
InAs /GaAs system 170 (1997) 558
incorporation efficiency on dopant behav-
Geng, C., A. Moritz, S. Heppel, A. Miihe, J.
iors in selective-area metalorganic vapor
Kuhn, P. Ernst, H. Schweizer, F. Phillipp,
phase epitaxy 170 (19976)8 5
A. Hangleiter and F. Scholz, Influence of
El-Masry, N., see Venkatasubramanian, R. 170 (19978)1 7
order-domain size on the optical gain of
El Jani, B., see Beaumont, B. 170 (19973)1 6
AlGalInP laser structures 170 (19974)1 8
Ellmer, K., see Thomas, B. 170 (19978)0 8
Gerhardt, M., see Kirpal, G. 170 (19971)6 7
Epler, J., see Moser, M. 170 (19974)0 4
Germain, M., see Gurskii, A.L. 170 (19975)3 3
Ernst, P., see Geng, C. 170 (19974)1 8
Geurts, J., see Tiimmler, J. 170 (19977)7 2
Ertel, J., see Tromson-Carli, A. 170 (19975)4 9
Gfrorer, O., see Ottenwalder, D. 170 (19976)9 5
Esser, N., see Knorr, K. 170 (19972)3 0
Gibart, P., see Beaumont, B. 170 (19973)1 6
Evans, D.A., see Gnoth, D.N. 170 (19971)9 8
Gigase, Y., see Beccard, R. 170 (1997) 97
Evrard, R., see Gurskii, A.L. 170 (19975)3 3
Giling, L.J., see Hageman, P.R. 170 (19972)7 0
Fan, G.H., N. Maung, T.L. Ng, P.F. Heelis, Giling, L.J., see Bastos, P.L. 170 (19977)1 0
J.O. Williams, A.C. Wright, D.F. Foster and Gloukhian, A., see Zimmermann, G. 170 (19976)4 5
D.J. Cole-Hamilton, Thermal decomposition Gnoth, D.N., I.B. Poole, T.L. Ng, D.A. Evans,
of di-tertiarybutyl selenide and dimethylzinc N. Maung, J.O. Williams and A.C. Wright,
in a metalorganic vapour phase epitaxy re- Growth process studies by reflectance ani-
actor 170 (1997) 485 sotropy spectroscopy on MOVPE ZnSe 170 (19971)9 8
Fang, R.Y., see Bertone, D. 170 (19977)1 5 Gobel, E.O., see Protzmann, H. 170 (19971)5 5
Fiechter, S., see Thomas, B. 170 (1997) 808 Gobel, E.O., see Spika, Z. 170 (19972)5 7
Fischer, R.A., A. Miehr, O. Ambacher, T. Gobel, E.O., see Rettig, R. 170 (19977)4 8
Metzger and E. Born, Novel single source Gogol, C., see Wajid, A. 170 (19972)3 7
precursors for MOCVD of AIN, GaN and Gokhale, M., see Bao, K.X. 170 (19974)9 7
InN 170 (1997) 139 Goldhorn, A., see Eisenbach, A. 170 (19974)5 1
Flavell, W.R., see Yates, H.M. 170 (19976)1 1 Goto, H., M. Takemura and T. Ido, Deep hole
Foster, D.F., see Pickett, N.L. 170 (1997) 476 trap level of nitrogen-doped ZnSe grown by
Foster, D.F., see Fan, G.H. 170 (1997) 485 metalorganic vapor phase epitaxy 170 (19975)1 0
Author index
Goto, K., see Takiguchi, T. 170 (19977)0 5 Hartmann, A., M. Bongartz, M. Hollfelder, H.
Gotoh, H., see Fujii, K. 170 (19976)7 9 Hardtdegen, Ch. Dieker and H. Lith,
Gotoh, S., see Nakamura, K. 170 (19973)7 7 Growth of modulation-doped GaAs/Al-
Gottfriedsen, J., see Pohl, U.W. 170 (19971)4 4 GaAs quantum wires on V-groove patterned
Gottschalch, V., see Kirpal, G. 170 (19971)6 7 substrates 170 (1997) 605
Grahn, H.T., see Hatatani, S. 170 (19972)9 7 Hasumi, H., see Sakata, Y. 170 (1997) 456
Gramlich, S., see Knauer, A. 170 (19972)8 1 Hatatani, S., L.-Q. Guo, J.-H. Oh, H.T. Grahn
Grattepain, C., see Tromson-Carli, A. 170 (19975)4 9 and M. Konagai, Heavily carbon-doped
Greborio, L., see Bertone, D. 170 (19977)1 5 GaAs grown on various oriented GaAs sub-
Griffiths, C.L., see Stafford, A. 170 (19971)8 2 strates by MOMBE 170 (19972)9 7
Grudowski, P.A., see Chelakara, R.V. 170 (19975)9 5 Heelis, P.F., see Fan, G.H. 170 (19974)8 5
Grundemann, T., see Dadgar, A. 170 (19971)7 3 Heime, K., see Behres, A. 170 (19976)5 5
Grundmann, M., see Heinrichsdorff, F. 170 (19975)6 8 Heime, K., see Lakner, H. 170 (19977)3 2
Grundmann, M., see Kappelt, M. 170 (19975)9 0 Heime, K., see Tiimmler, J. 170 (19977)7 2
Gulden, K.H., see Moser, M. 170 (19974)0 4 Heime, K., see von Eichel-Streiber, C. 170 (19977)8 3
Guo, L.-Q., see Hatatani, S. 170 (19972)9 7 Heinecke, H., see Ritter, D. 170 (19971)4 9
Gurskii, A.L., W. Taudt, S. Lampe, H. Heinecke, H., see Keidler, M. 170 (19971)6 1
Hamadeh, F. Sauerlander, M. Germain, M. Heinrichsdorff, F., A. Krost, M. Grundmann,
Basilavecchia, R. Evrard, G.P. Yablonskii D. Bimberg, F. Bertram, J. Christen, A.
and M. Heuken, Optical and electrical prop- Kosogov and P. Werner, Self organization
erties of MOVPE-grown ZnSe: N using tri- phenomena of InGaAs /GaAs quantum dots
allylamine as a nitrogen precursor 170 (1997) 533 grown by metalorganic chemical vapour de-
Gustafson, B., see Carlsson, N. 170 (1997) 127 position 170 (19975)6 8
Gustafsson, A., see Biasiol, G. 170 (1997) 600 Heitz, R., see Dadgar, A. 170 (19971)7 3
Gutsche, D., see Kurpas, P. 170 (1997) 442 Hellig, K., see Présch, G. 170 (19975)3 7
Heppel, S., see Geng, C. 170 (19974)1 8
Hermans, J., see Tiimmler, J. 170 (19977)7 2
Hetzel, M., see Wajid, A. 170 (19972)3 7
Hageman, P.R., J. te Nijenhuis, M.J. Anders Heuken, M., J. Sollner, W. Taudt, S. Lampe
and L.J. Giling, Dependence of impurity and H. Hamadeh, Metalorganic chemical
incorporation upon substrate misorientation vapor epitaxy and doping of ZnMgSSe het-
during GaAs growth by metalorganic vapour erostructures for blue emitting devices 170 (1997) 30
phase epitaxy 170 (1997) 270 Heuken, M., see Taudt, W. 170 (19974)9 1
Hageman, P.R., see Bastos, P.L. 170 (19977)1 0 Heuken, M., see Gurskii, A.L. 170 (19975)3 3
Hahn, B., see Kastner, M.J. 170 (1997) 188 Heuken, M., see Présch, G. 170 (19975)3 7
Hahn, B., M. Deufel, M. Meier, M.J. Kastner, Heuken, M., see Schneider, A. 170 (19977)6 7
R. Blumberg and W. Gebhardt, Photoas- Heuken, M., see von Eichel-Streiber, C. 170 (19977)8 3
sisted growth and nitrogen doping of ZnSe 170 (1997) 472 Hidaka, J., see Arai, T. 170 (1997) 88
Halliwell, M.A.G., X-ray diffraction solutions Hiramatsu, K., see Ohuchi, Y. 170 (19973)2 5
to heteroepitaxial growth problems 170 (1997) 47 Hirotani, M., T.E. Sale, J. Woodhead, J.S.
Hamadeh, H., see Heuken, M. 170 (1997) 30 Roberts, P.N. Robson, T. Saka and T. Kato,
Hamadeh, H., see Taudt, W. 170 (19974)9 1 High power, high speed surface emitting
Hamadeh, H., see Gurskii, A.L. 170 (19975)3 3 LEDs with an InGaAs quantum well 170 (1997) 390
Han, Y.K., see Kim, E.K. 170 (19978)0 3 Hisa, Y., see Takiguchi, T. 170 (1997) 705
Hanamaki, Y., see Pan, W. 170 (19975)8 5 Hjelt, K. and T. Tuomi, Photoluminescence and
Haneda, S., see Nishida, K. 170 (19973)1 2 electrical properties of MOVPE-grown
Hangleiter, A., see Scholz, F. 170 (19973)2 1 zinc-doped gallium antimonide on gallium
Hangleiter, A., see Geng, C. 170 (19974)1 8 arsenide 170 (1997) 794
Hangleiter, A., see Ottenwalder, D. 170 (19976)9 5 Ho, I.H., see Murata, H. 170 (19972)1 9
Hara, K., see Nishida, K. 170 (19973)1 2 Ho, I.H., see Chun, Y.S. 170 (1997) 263
Hara, K., see Honda, T. 170 (19975)0 3 Hohnsdorf, F., see Protzmann, H. 170 (1997) 155
Hara, S., J. Motohisa and T. Fukui, Formation Hollfelder, M., S. Hon, B. Setzer, K. Schimpf,
and characterization of InGaAs strained M. Horstmann, Th. Schapers, D. Schmitz,
quantum wires on GaAs multiatomic steps H. Hardtdegen and H. Liith, Demonstration
grown by metalorganic vapor phase epitaxy 170 (1997) 579 of the N, carrier process for LP-MOVPE of
Hardt, A., see Taudt, W. 170 (1997) 491 IlI/V’s 170 (1997) 103
Hardtdegen, H., see Hollfelder, M. 170 (1997) 103 Hollfelder, M., see Hartmann, A. 170 (1997) 605
Hardtdegen, H., see Hartmann, A. 170 (1997) 605 Holmes, A.L., see Islam, M.R. 170 (19974)1 3
Hiarle, V., see Scholz, F. 170 (1997) 321 Hon, S., see Hollfelder, M. 170 (1997) 103
826 Author index
Honda, T., S.W. Lim, K. Inoue, K. Hara, H. Kamata, A., H. Yoshida, S. Chichibu and H.
Munekata, H. Kukimoto, F. Koyama and K. Nakanishi, Growth and doping character-
Iga, Diode characteristics of Li,N-diffused istics of ZnSeTe epilayers by MOCVD 170 (19975)1 8
ZnSe grown by MOVPE 170 (19975)0 3 Kaneda, N., see Ohuchi, Y. 170 (1997) 325
H6pfner, C., see Thomas, B. 170 (19978)0 8 Kaneko, Y., see Pan, W. 170 (1997) 585
Horikawa, H., see Nakamura, K. 170 (19973)7 7 Kapolnek, D., R.D. Underwood, B.P. Keller, S.
Horikoshi, Y., see Ando, S. 170 (19977)1 9 Keller, S.P. DenBaars and U.K. Mishra,
Horstmann, M., see Hollfelder, M. 170 (19971)0 3 Selective area epitaxy of GaN for electron
Hosoi, N., see Fujii, K. 170 (19976)7 9 field emission devices 170 (1997) 340
Hsu, T.C., see Chun, Y.S. 170 (19972)6 3 Kapolnek, D., see Keller, S. 170 (1997) 349
Huang, M., see Chen, S. 170 (19974)3 3 Kapon, E., see Biasiol, G. 170 (1997) 600
Huang, Z.C., J.C. Chen and D. Wickenden, Kapon, E., see Reinhardt, F. 170 (1997) 689
Characterization of GaN using thermally Kappelt, M., V. Turck, M. Grundmann, H.
stimulated current and photocurrent spectro- Cerva and D. Bimberg, Low pressure
scopies and its application to UV detectors 170 (19973)6 2 metal-organic chemical vapor deposition of
Hull, R., see Islam, M.R. 170 (19974)1 3 InP/InAlAs /InGaAs quantum wires 170 (1997) 590
Hurd, C., see Wajid, A. 170 (19972)3 7 Kastner, M.J., B. Hahn, R. Blumberg, E. Sossna,
Hwang, S.-M., see Kim, S.-I. 170 (19976)6 5 R. Duschl and W. Gebhardt, In situ re-
Hyeon, J.Y., see Dadgar, A. 170 (19971)7 3 flectance difference spectroscopy of ZnSe-
Hyuga, F., see Nittono, T. 170 (19977)6 2 based semiconductor surfaces 170 (1997) 188
Kastner, M.J., see Hahn, B. 170 (1997) 472
Kasu, M. and N. Kobayashi, Surface diffusion
Ido, T., see Goto, H. 170 (19975)1 0
kinetics of GaAs and AlAs metalorganic
Iga, K., see Honda, T. 170 (19975)0 3
vapor-phase epitaxy 170 (19972)4 6
Ingle, N.K., see Theodoropoulos, C. 170 (1997) 72
Kato, T., see Hirotani, M. 170 (19973)9 0
Inomoto, Y., see Sakata, Y. 170 (19974)5 6
Kato, T., see Soga, T. 170 (19974)4 7
Inoue, K., see Honda, T. 170 (19975)0 3
Kaufmann, B., see Scholz, F. 170 (19973)2 1
Irvine, S.J.C., see Stafford, A. 170 (19971)8 2
Kawaguchi, D., see Ogata, K.-i. 170 (19975)0 7
Ishibashi, A., see Toda, A. 170 (19974)6 1
Kearley, M.Q., see Wood, A.K. 170 (19971)3 2
Ishikawa, M., see Pan, W. 170 (19975)8 5
Keidler, M., M. Popp, D. Ritter, B. Marheineke,
Ishino, M., see Otsuka, N. 170 (19976)2 6
H. Heinecke, H. Baumeister and E. Veuhoff,
Islam, M.R., R.D. Dupuis, A.L. Holmes, A.P.
Growth of 1.55 «wm DH laserstructures us-
Curtis, N.F. Gardner, G.E. Stillman, J.E. 170 (19971)6 1
ing TBAs and TBP in MOMBE
Baker and R. Hull, Luminescence character- 170 (19973)4 0
Keller, B.P., see Kapolnek, D.
istics of InAlP—InGaP heterostructures hav- 170 (19973)4 9
Keller, 3.P., see Keller, S.
ing native-oxide windows 170 (1997) 413 170 (1997) 340°
Keller, S., see Kapolnek, D.
Itagaki, T., see Takiguchi, T. 170 (1997) 705
Keller, S., B.P. Keller, D. Kapolnek, U.K.
Ito, R., see Yaguchi, H. 170 (1997) 353
Mishra, S.P. DenBaars, I.K. Shmagin, R.M.
Ito, R., see Pan, W. 170 (1997) 585
Kolbas and S. Krishnankutty, Growth of
Iwai, S., see Tanaka, S. 170 (1997) 329
bulk InGaN films and quantum wells by
atmospheric pressure metalorganic chemical
vapour deposition 170 (1997) 349
Jagadish, C., see Clark, A. 170 (19974)2 4
Kera, T., see Ogata, K.-i. 170 (1997) 507
Jain, F.C., see Bao, K.X. 170 (19974)9 7
Kibune, M., see Yaguchi, H. 170 (1997) 353
Jansen, M., see Mawst, L.J. 170 (19973)8 3
Kim, E.K., see Kim, S.-I. 170 (1997) 665
Jensen, K.F., see Wang, C.A. 170 (1997) 55
Kim, E.K., M.H. Son, S.-K. Min, Y.K. Han and
Jiang, J., see Spika, Z. 170 (19972)5 7
S.S. Yom, Growth of highly oriented TiO,
Jimbo, T., see Soga, T. 170 (19974)4 7
thin films on InP(100) substrates by met-
Johansson, J., see Seifert, W. 170 (1997) 39
alorganic chemical vapor deposition 170 (1997) 803
Johnson, N.P., see Yates, H.M. 170 (19976)1 1
Kim, M.-S., see Kim, S.-I. 170 (1997) 665
Jones, A.C., see O’Brien, P. 170 (1997) 23
Kim, S.-I., M.-S. Kim, Y. Kim, S.-M. Hwang,
Jones, A.C., see Wang, C.A. 170 (1997) 55
B.-D. Min, C.S. Son, E.K. Kim and S.-K.
Jiirgensen, H., see Bergunde, T. 170 (1997) 66
Min, Lateral growth rate control of GaAs on
Jurgensen, H., see Beccard, R. 170 (1997) 97
patterned substrates by CCl, and CBr, dur-
ing MOCVD 170 (1997) 665
Kadinski, L., see Bergunde, T. 170 (1997) 66 Kim, Y., see Kim, S.-I. 170 (1997) 665
Kaiser, R., see Roehle, H. 170 (1997) 109 Kirpal, G., M. Gerhardt, G. Benndorf, R.
Kalisetty, S., see Bao, K.X. 170 (1997) 497 Schwabe, F. Pietag, I. Pietzonka, G. Lip-
Author index
pold, G. Wagner, R. Franzheld and V. Kumakura, K., J. Motohisa and T. Fukui, For-
Gottschalch, MOVPE growth and character- mation and characterization of coupled
ization of GalnAs(P) on (001) InP using quantum dots (CQDs) by selective area met-
diethyltertiarybutylarsine (DEtBAs) and ter- alorganic vapor phase epitaxy 170 (1997) 700
tiarybutylphosphine (TBP) as the group-V Kumano, H., see Suemune, I. 170 (1997) 480
sources 170 (1997) 167 Kuphal, E., see Lindner, A. 170 (1997) 287
Kitamura, M., M. Nishioka, R. Schur and Y. Kuphal, E., see Eisenbach, A. 170 (1997) 451
Arakawa, Direct observation of the transi- Kurpas, P., A. Rumberg, M. Weyers, K. Knorr,
tion from a 2D layer to 3D islands at the T. Bergunde, M. Sato and W. Richter,
initial stage of InGaAs growth on GaAs by Growth monitoring by reflectance anisotro-
AFM 170 (1997) 563 py spectroscopy in MOVPE reactors for
Kito, M., see Otsuka, N. 170 (1997) 626 device fabrication 170 (1997) 203
Kiyomi, K., see Fujii, K. 170 (1997) 679 Kurpas, P., E. Richter, M. Sato, F. Brunner, D.
Klipstein, P.C., see Booker, G.R. 170 (1997) 777 Gutsche and M. Weyers, MOVPE growth
Knauer, A., I. Rechenberg, F. Bugge, S. Gram- of GalnP/GaAs hetero-bipolar-transistors
lich, G. Oelgardt, A. Oster and M. Weyers, using CBr, as carbon dopant source 170 (1997) 442
Influence of the growth temperature and Kuttler, M., see Dadgar, A. 170 (1997) 173
substrate orientation on the layer properties
of MOVPE-grown (Ga,In)(As,P) /GaAs 170 (1997) 281 Lach, E., see Wiedemann, P. 170 (1997) 117
Knorr, K., see Kurpas, P. 170 (1997) 203 Laih, L.-W., see Liu, W.-C. 170 (1997) 438
Knorr, K., M. Pristovsek, U. Resch-Esser, N. Lakner, H., S. Ungerechts, A. Behres, A. Kohl,
Esser, M. Zorn and W. Richter, In situ B. Opitz, K. Heime and J. Woitok, Charac-
surface passivation of III-V semiconductors terization of MOVPE grown InGaAsP su-
in MOVPE by amorphous As and P layers 170 (1997) 230 perlattices for modulators by electron
Kobayashi, N., Y. Kobayashi and K. Uwai, diffraction, X-ray diffraction and Z-contrast
Chemical trend observed in anisotropic sur- imaging 170 (19977)3 2
face reflectance spectra of MOVPE by sur- Lakrimi, M., see Booker, G.R. 170 (19977)7 7
face photoabsorption 170 (19972)2 5 Lampe, S., see Heuken, M. 170 (1997) 30
Kobayashi, N., see Kasu, M. 170 (19972)4 6 Lampe, S., see Taudt, W. 170 (19974)9 1
Kobayashi, N., see Saito, H. 170 (19973)7 2 Lampe, S., see Gurskii, A.L. 170 (19975)3 3
Kobayashi, N., see Ando, S. 170 (19977)1 9 Lamvik, M., see Venkatasubramanian, R. 170 (19978)1 7
Kobayashi, Y., see Kobayashi, N. 170 (19972)2 5 Landgren, G., see Silfvenius, C. 170 (19971)2 2
Kohl, A., see Behres, A. 170 (19976)5 5 Laube, G., see Wiedemann, P. 170 (19971)1 7
Kohl, A., see Lakner, H. 170 (19977)3 2 Lee, K.-J. and J.C. Chen, Regrowth of high-qu-
Kohne, L., see Dadgar, A. 170 (19971)7 3 ality AlGaAs and AlGaInP layers and quan-
Kolbas, R.M., see Keller, S. 170 (19973)4 9 tum well structures on Se-doped AlGaAs by
Koleske, D.D., see Wickenden, A.E. 170 (19973)6 7 MOVPE 170 (19977)5 7
Komori, M., see Suzuki, M. 170 (19976)6 1 Leitch, A.W.R., see Scriven, G.J. 170 (19978)1 3
Konagai, M., see Hatatani, S. 170 (19972)9 7 Lengeling, G., see Beccard, R. 170 (1997) 97
Kosogov, A., see Heinrichsdorff, F. 170 (19975)6 8 Lentz, D., see Ambacher, O. 170 (19973)3 5
Koukitu, A., N. Takahashi, T. Taki and H. Leo, G., see Mazzer, M. 170 (19975)5 3
Seki, Thermodynamic analysis of the Leys, M.R., see Verschuren, C.A. 170 (19976)5 0
MOVPE growth of In ,Ga,_ .N 170 (19973)0 6 Li, J. and T.F. Kuech, Surface morphology of
Koyama, F., see Honda, T. 170 (19975)0 3 carbon-doped GaAs grown by MOVPE 170 (1997) 292
Kozyrkov, V.V., see Scriven, G.J. 170 (19978)1 3 Li, J., see Booker, G.R. 170 (1997) 777
Krishnankutty, S., see Keller, S. 170 (19973)4 9 Lim, S.W., see Honda, T. 170 (1997) 503
Kroll, W., see Thompson, A.G. 170 (1997) 92 Lin, K.-W., see Liu, W.-C. 170 (1997) 438
Krost, A., see Heinrichsdorff, F. 170 (19975)6 8 Lindner, A., P. Velling, W. Prost, A. Wiersch,
Kudo, K., T. Sasaki and M. Yamaguchi, Migra- E. Kuphal, A. Burchard, R. Magerle, M.
tion-controlled narrow-stripe selective Deicher and F.J. Tegude, The role of hydro-
MOVPE for high-quality InGaAsP /In- gen in low-temperature MOVPE growth and
GaAsP MQWs 170 (19976)3 4 carbon doping of Ing 5,Gag47As for InP-
Kuech, T.F., see Li, J. 170 (19972)9 2 based HBT 170 (1997) 287
Kuech, T.F., see Liu, J. 170 (19973)5 7 Lippold, G., see Kirpal, G. 170 (1997) 167
Kuech, T.F., see Booker, G.R. 170 (19977)7 7 Liu, B., see Chen, S. 170 (1997) 433
Kuhn, J., see Geng, C. 170 (19974)1 8 Liu, H.Y., see Bevan, M.J. 170 (1997) 467
Kukimoto, H., see Nishida, K. 170 (19973)1 2 Liu, J., D. Zhi, JM. Redwing, M.A. Tischler
Kukimoto, H., see Honda, T. 170 (19975)0 3 and T.F. Kuech, GaN films studied by
828 Author index
near-field scanning optical microscopy, C. Zanotti Fregonara and G. Salviati, Struc-
atomic force microscopy and high resolu- tural study of (100)CdTe epilayers grown
tion X-ray diffraction 170 (1997) 357 by MOVPE on ZnTe buffered and un-
Liu, W.-C., L.-W. Laih, J.-H. Tsai, K.-W. Lin buffered (100)GaAs 170 (19975)5 3
and C.-C. Cheng, InGaAs—GaAs_ pseudo- McDonald, M., see Wajid, A. 170 (19972)3 7
morphic heterostructure transistors prepared Meier, M., see Hahn, B. 170 (19974)7 2
by MOVPE 179 (19974)3 8 Meliga, M., see Bertone, D. 170 (19977)1 5
Longo, M., see Mazzer, M. 170 (19975)5 3 Mereutza, A.Z., see Mawst, L.J. 170 (19973)8 3
Lopez, J., see Mawst, L.J. 170 (19573)8 3 Metzger, T., see Fischer, R.A. 170 (19971)3 9
Lorberth, J., see Protzmann, H. 170 (19971)5 5 Metzger, T., see Ambacher, O. 170 (19973)3 5
Losurdo, M., see Bruno, G. 170 (19973)0 1 Miehr, A., see Fischer, R.A. 170 (19971)3 9
Lovergine, N., see Mazzer, M. 170 (19975)5 3 Mihashi, Y., see Takiguchi, T. 170 (19977)0 5
Lu, D.-c., see Duan, S.-k. 170 (19975)1 4 Min, B.-D., see Kim, S.-I. 170 (19976)6 5
Lum, R., see Wajid, A. 170 (19972)3 7 Min, S.-K., see Kim, S.-I. 170 (19976)6 5
Liith, H., see Hollfelder, M. 170 (19971)0 3 Min, S.-K., see Kim, E.K. 170 (19978)0 3
Liith, H., see Hartmann, A. 170 (19976)0 5 Minagawa, S., see Suzuki, M. 170 (19976)6 1
Lyapin, S.G., see Booker, G.R. 170 (19977)7 7 Mircea, A., see Zimmermann, G. 170 (19976)4 5
Mishra, U.K., see Kapolnek, D. 170 (19973)4 0
Mishra, U.K., see Keller, S. 170 (19973)4 9
Magerle, R., see Lindner, A. 170 (1997) 287 Mitra, P., F.C. Case, M.B. Reine, R. Starr and
Magnetti, G., see Bertone, D. 170 (19977)1 5 M.H. Weiler, Doping in MOVPE of
Maigné, P. and D. Coulas, Structural investiga- HgCdTe: orientation effects and growth of
tion of MOVPE grown InGaAs buffer lay- high performance IR photodiodes 170 (1997) 542
ers 170 (1997) 743 Miyazaki, Y., see Takiguchi, T. 170 (1997) 705
Majerfeld, A., see Mao, E. 170 (1997) 428 Miyoshi, S., see Yaguchi, H. 170 (1997) 353
Makarov, Yu.N., see Bergunde, T. 170 (1997) 66 Mizuno, Y., S.-i. Uekusa and H. Okabe, Hydro-
Makimoto, T., see Saito, H. 170 (1997) 372 dynamic description of epitaxial film growth
Makita, K., see Tsuji, M. 170 (1997) 669 in a horizontal reactor 170 (1997) 61
Malag, A. and W. Strupifski, MOVPE-grown Mo, R., see Bao, K.X. 170 (19974)9 7
(AlGa)As double-barrier multiquantum well Moerman, I., see Zhang, X. 170 (1997) 83
(DBMQW) laser diode with low vertical Moerman, I., see Van der Stricht, W. 170 (19973)4 4
beam divergence 170 (1997) 408 Moerman, I., see D’Hondt, M. 170 (19976)1 6
Malik, M.A., see O’Brien, P. 170 (1997) 23 Moerman, I., see Vanderbauwhede, W. 170 (19977)3 8
Mancini, A.M., see Mazzer, M. 170 (1997) 553 Monteil, Y., see Thévenot, V. 170 (19972)5 1
Mao, E. and A. Majerfeld, Growth of heavily Moon, R.L., MOVPE: is there any other tech-
C-doped GaAs/AlGaAs MQW structures nology for optoelectronics? 170 (1997) 1
by MOVPE for 2—3 um normal incidence Morimoto, T., see Sakata, Y. 170 (1997) 456
photodetectors 170 (19974)2 8 Morishita, T., see Becht, M. 170 (1997) 799
Marheineke, B., see Keidler, M. 170 (19971)6 1 Moritz, A., see Geng, C. 170 (19974)1 8
Marschner, T., see Rettig, R. 170 (19977)4 8 Moseley, A.J., see Wood, A.K. 170 (1997) 132
Martin, R.W., see Wood, A.K. 170 (19971)3 2 Moser, M., K.H. Gulden, J. Epler and H.P.
Martinet, E., see Biasiol, G. 170 (19976)0 0 Schweizer, High performance deep red
Mason, N.J., see Booker, G.R. 170 (19977)7 7 AlAs /AlGaAs top-emitting VCSELs grown
Matsui, Y., see Otsuka, N. 170 (19976)2 6 by MOVPE at high growth rates 170 (19974)0 4
Matsumoto, K., see Arai, T. 170 (1997) 88 Motohisa, J., see Hara, S. 170 (19975)7 9
Mattocks, P.G., see Peck, J. 170 (19975)2 3 Motohisa, J., see Kumakura, K. 170 (19977)0 0
Maung, N., see Gnoth, D.N. 170 (19971)9 8 Moulin, D., see Tiimmler, J. 170 (19977)7 2
Maung, N., see Fan, G.H. 170 (19974)8 5 Mouniziaris, T.J., see Theodoropoulos, C. 170 (1997) 72
Maung, N., see Poole, I.B. 170 (19975)2 8 Mouniziaris, T.J., see Peck, J. 170 (19975)2 3
Mause, K., see Eisenbach, A. 170 (19974)5 1 Miihe, A., see Geng, C. 170 (19974)1 8
Mawst, L.J., A. Bhattacharya, M. Nesnidal, J. Miiller, M., see Protzmann, H. 170 (19971)5 5
Lopez, D. Botez, A.V. Syrbu, V.P. Miiller, M., see Thomas, B. 170 (19978)0 8
Yakovlev, G.I. Suruceanu, A.Z. Mereutza, Munekata, H., see Nishida, K. 170 (19973)1 2
M. Jansen and R.F. Nabiev, MOVPE-grown Munekata, H., see Honda, T. 170 (19975)0 3
high CW power InGaAs /InGaAsP /InGaP Murata, H., I.H. Ho and G.B. Stringfellow,
diode lasers 170 (1997) 383 Effects of growth temperature and V_/III
Mazzer, M., M. Longo, G. Leo, N. Lovergine, ratio on surface structure and ordering in
A.M. Mancini, A.V. Drigo, F. Romanato, Gao sino 5P 170 (19972)1 9
Author index 829
Murata, H., see Chun, Y.S. 170 (1997) 263 Ortion, J.M., Y. Cordier, J.C. Garcia, D. Adam
Murgatroyd, I.J., see Booker, G.R. 170 (1997) 777 and M. Champagne, Selective area etching
of AlGaAs/GaAs_ heterostructures using
Nabiev, R.F., see Mawst, L.J. 170 (1997) 383
AsCl, 170 (1997) 674
Nakahara, J., see Suemune, I. 170 (1997) 480
Osabe, J., see Ohkubo, M. 170 (1997) 177
Nakajima, M., see Nakamura, K. 170 (1997) 377
Oshiba, S., see Nakamura, K. 170 (1997) 377
Nakamura, F., see Toda, A. 170 (1997) 461
Oster, A., see Knauer, A. 170 (1997) 281
Nakamura, K., S. Oshiba, M. Nakajima, S.
Otsuka, N., M. Kito, Y. Yabuuchi, M. Ishino
Gotoh and H. Horikawa, Microampere laser
and Y. Matsui, Anomalous temperature de-
threshold at 80°C with InGaAs /GaAs /In-
pendence of PL characteristics in ordered
GaP buried heterostructre strained quantum
InGaAsP strained layer multi-quantum well
well lasers 170 (1997) 377
structure 170 (1997) 626
Nakamura, S., First II[—V-nitride-based violet
Ottenwialder, D., G. Frankowsky, O. Gfrorer,
laser diodes 170 (1997) 11
A. Hangleiter and F. Scholz, Control of
Nakanishi, H., see Kamata, A. 170 (19975)1 8
monolayer terrace formation in selective
Nakayama, H., see Ohuchi, Y. 170 (19973)2 5
epitaxy 170 (1997) 695
Nashiki, H., see Suemune, I. 170 (19974)8 0
Ougazzaden, A., see Silvestre, L. 170 (1997) 639
Neethling, J.H., see Scriven, G.J. 170 (19978)1 3
Ougazzaden, A., see Zimmermann, G. 170 (1997) 645
Nesnidal, M., see Mawst, L.J. 170 (19973)8 3
Ng, T.L., see Gnoth, D.N. 170 (19971)9 8
Pan, W., H. Yaguchi, Y. Hanamaki, M.
Ng, T.L., see Fan, G.H. 170 (19974)8 5
Ishikawa, Y. Kaneko, K. Onabe, R. Ito and
Ng, T.L., see Poole, I.B. 170 (19975)2 8
Y. Shiraki, A highly luminescent crescent-
Nicholas, R.J., see Wood, A.K. 170 (19971)3 2
shaped tensile-strained GaAsP/AIGaAs
Nicholas, R.J., see Booker, G.R. 170 (19977)7 7
quantum wire laser structure 170 (1997) 585
Ninomiya, T., see Ohkubo, M. 170 (19971)7 7
Paoletti, R., see Bertone, D. 170 (19977)1 5
Nishida, K., S. Haneda, K. Hara, H. Munekata
Patriarche, G., see Silvestre, L. 170 (1997) 639
and H. Kukimoto, MOVPE of GaN using a
Patrikarakos, D.G., N. Shukla and M.E. Pem-
specially designed two-flow horizontal reac-
ble, Reflectance anisotropy as an in situ
tor 170 (19973)1 2
monitor for the growth of InP on (001) InP
Nishioka, M., see Kitamura, M. 170 (1997) 563
by pseudo-atmospheric pressure atomic
Nittono, T. and F. Hyuga, Reduction of unin-
layer epitaxy 170 (19972)1 5
tentional impurities at the interface between
Peck, J., T.J. Mountziaris, S. Stoltz, A. Petrou
epitaxial layers and GaAs substrates 170 (1997) 762
and P.G. Mattocks, Metalorganic vapor
Obinata, T., see Suemune, I. 170 (1997) 480 phase epitaxy of Zn,_ ,Fe,Se films 170 (1997) 523
O’Brien, P., M.A. Malik, M. Chunggaze, T. Pemble, M.E., see Patrikarakos, D.G. 170 (19972)1 5
Trindade, J.R. Walsh and A.C. Jones, Pre- Pemble, M.E., see Yates, H.M. 170 (19976)1 1
cursor chemistry: remaining challenges and Petrou, A., see Peck, J. 170 (1997) 523
some novel approaches 170 (1997) 23 Phillipp, F., see Geng, C. 170 (19974)1 8
Oei, Y.S., see Verschuren, C.A. 170 (1997) 650 Pickett, N.L., D.F. Foster and D.J. Cole-Ham-
Oelgardt, G., see Knauer, A. 170 (1997) 281 ilton, Studies of prereactions during
Ogata, K.-i., T. Kera, D. Kawaguchi, Sz. Fujita MOVPE growth of wide band-gap II/VI
and Sg. Fujita, Characterization of p-type semiconductors: the effect of pyridine upon
ZnSe grown by MOVPE; excitonic emis- the gas-phase reactions between H,S and
sion lifetime measurements 170 (1997) 507 Me, Zn 170 (1997) 476
Oh, J.-H., see Hatatani, S. 170 (1997) 297 Pietag, F., see Kirpal, G. 170 (1997) 167
Ohkubo, M., J. Osabe, T. Shiojima, T. Yam- Pietzonka, I., see Kirpal, G. 170 (1997) 167
aguchi and T. Ninomiya, Magnesium-doped Pistol, M.-E., see Seifert, W. 170 (1997) 39
InGaAs using (C,H;C;H,),Mg: applica- Pohl, U.W., S. Freitag, J. Gottfriedsen, W.
tion to InP-based HBTs 170 (1997) 177 Richter and H. Schumann, Synthesis and
Ohuchi, Y., K. Tadatomo, H. Nakayama, N. properties of zinc—nitrogen compounds for
Kaneda, T. Detchprohm, K. Hiramatsu and the MOVPE of p-type ZnSe 170 (1997) 144
N. Sawaki, New dopant precursors for n- Poole, I.B., see Gnoth, D.N. 170 (1997) 198
type and p-type GaN 170 (19973)2 5 Poole, I.B., T.L. Ng, N. Maung, J.O. Williams
Okabe, H., see Mizuno, Y. 170 (1997) 61 and A.C. Wright, MOVPE growth of mag-
Omling, P., see Carlsson, N. 170 (19971)2 7 nesium cadmium sulphide: rocksalt or spha-
Onabe, K., see Yaguchi, H. 170 (19973)5 3 lerite? 170 (1997) 528
Onabe, K., see Pan, W. 170 (19975)8 5 Popp, M., see Keidler, M. 170 (1997) 161
Opitz, B., see Lakner, H. 170 (19977)3 2 Portal, J.C., see Booker, G.R. 170 (1997) 777
830 Author index
Pristovsek, M., see Knorr, K. 170 (1997) 230 Rongen, R.T.H., see Verschuren, C.A. 170 (1997) 650
Présch, G., K. Hellig, R. Beyer, A. Schneider, Rumberg, A., see Kurpas, P. 170 (1997) 203
H. Burghardt, W. Taudt, M. Heuken and
D.R.T. Zahn, Defects in MOVPE grown
ZnSe on GaAs studied by deep level tran- Saito, H., T. Makimoto and N. Kobayashi,
sient spectroscopy 170 (1997) 537 Photoluminescence characteristics of nitro-
Prost, W., see Lindner, A. 170 (1997) 287 gen atomic-layer-doped GaAs grown by
Protzmann, H., F. Hohnsdorf, Z. Spika, W. MOVPE 170 (1997) 372
Stolz, E.O. Gébel, M. Miiller and J. Lor- Saka, T., see Hirotani, M. 170 (1997) 390
berth, Properties of (Gay 47Ing 53)As epitax- Sakata, Y., T. Morimoto, Y. Inomoto and H.
ial layers grown by metalorganic vapor Hasumi, Low-threshold strained multi-
phase epitaxy (MOVPE) using alternative quantum well lasers fabricated by selective
arsenic precursors 170 (1997) 155 metalorganic vapor phase epitaxy without a
semiconductor etching process 170 (1997) 456
Ramdane, A., see Silvestre, L. 170 (19976)3 9 Sale, T.E., see Hirotani, M. 170 (1997) 390
Ramdane, A., see Zimmermann, G. 170 (19976)4 5 Sale, T.E., J.S. Roberts, J. Woodhead, J.P.R.
Ramvall, P., see Carlsson, N. 170 (19971)2 7 David and P.N. Robson, Visible (683 to 713
Rao, E.V.K., see Zimmermann, G. 170 (19976)4 5 nm) room-temperature AlGaAs vertical cav-
Rappoli, B.J., see DeSisto, W.J. 170 (19972)4 2 ity surface emitting lasers (VCSELs) 170 (19973)9 9
Rechenberg, I., see Knauer, A. 170 (19972)8 1 Sale, T.E., see Roberts, J.S. 170 (19976)2 1
Redwing, J.M., see Liu, J. 170 (19973)5 7 Salim, S., see Wang, C.A. 170 (1997) 55
Regreny, P., see Thévenot, V. 170 (19972)5 1 Salviati, G., see Mazzer, M. 170 (19975)5 3
Reine, M.B., see Mitra, P. 170 (19975)4 2 Samuelson, L., see Seifert, W. 170 (1997) 39
Reinhardt, F., see Biasiol, G. 170 (19976)0 0 Samuelson, L., see Carlsson, N. 170 (19971)2 7
Reinhardt, F., B. Dwir, G. Biasiol and E. Kapon, Sasaki, T., see Kudo, K. 170 (19976)3 4
Step ordering during OMCVD growth on Sato, H., see Suzuki, M. 170 (19976)6 1
non-planar substrates 170 (1997) 689 Sato, M., see Kurpas, P. 170 (19972)0 3
Resch-Esser, U., see Knorr, K. 170 (1997) 230 Sato, M., see Kurpas, P. 170 (19974)4 2
Rettig, R., T. Marschner, L. Tapfer, W. Stolz Sauerlander, F., see Gurskii, A.L. 170 (19975)3 3
and E.O. Godbel, Growth and _ structural Sawaki, N., see Ohuchi, Y. 170 (19973)2 5
properties of (GaIn)As /Ga(PAs) intention- Schaper, A., see Spika, Z. 170 (19972)5 7
ally disordered superlattice structures grown Schapers, Th., see Hollfelder, M. 170 (19971)0 3
by metalorganic vapor phase epitaxy 170 (19977)4 8 Schienle, F., see Steimetz, E. 170 (19972)0 8
Richter, E., see Kurpas, P. 170 (19974)4 2 Schimpf, K., see Hollfelder, M. 170 (19971)0 3
Richter, W., see Pohl, U.W. 170 (19971)4 4 Schmitz, D., see Bergunde, T. 170 (1997) 66
Richter, W., see Kurpas, P. 170 (19972)0 3 Schmitz, D., see Beccard, R. 170 (1997) 97
Richter, W., see Steimetz, E. 170 (19972)0 8 Schmitz, D., see Hollfelder, M. 170 (19971)0 3
Richter, W., see Knorr, K. 170 (19972)3 0 Schneider, A., see Prosch, G. 170 (19975)3 7
Rieger, W., see Ambacher, O. 170 (19973)3 5 Schneider, A., D. Drews, J. S6llner, M. Heuken
Ritter, D. and H. Heinecke, Evaluation of and D.R.T. Zahn, Temperature induced res-
cracking efficiency of As and P precursors 170 (1997) 149 onant Raman scattering of MOVPE grown
Ritter, D., see Keidler, M. 170 (1997) 161 ZnS ,Se, — ,/GaAs(100) heterostructures 170 (1997) 767
Roberts, J.S., see Hirotani, M. 170 (1997) 390 Schneider, P., see Tummler, J. 170 (1997) 772
Roberts, J.S., see Sale, T.E. 170 (19973)9 9 Scholz, F., V. Harle, F. Steuber, H. Bolay, A.
Roberts, J.S., J.P.R. David, Y.H. Chen and T.E. Dornen, B. Kaufmann, V. Syganow and A.
Sale, Optical properties of MOVPE grown Hangleiter, Low pressure MOVPE of GaN
Al .Ga,_, As quantum wells 170 (1997) 621 and GalnN /GaN heterostructures 170 (19973)2 1
Robinson, J., see Bao, K.X. 170 (1997) 497 Scholz, F., see Geng, C. 170 (19974)1 8
Robson, P.N., see Hirotani, M. 170 (1997) 390 Scholz, F., see Geiger, M. 170 (19975)5 8
Robson, P.N., see Chen, Y.H. 170 (1997) 394 Scholz, F., see Ottenwalder, D. 170 (19976)9 5
Robson, P.N., see Sale, T.E. 170 (1997) 399 Schroeter-Janssen, H., see Roehle, H. 170 (19971)0 9
Roehle, H., H. Schroeter-Janssen and R. Kaiser, Schumann, H., see Pohl, U.W. 170 (19971)4 4
Large- and _ selective-area LP-MOVPE Schumann, H., see Dadgar, A. 170 (19971)7 3
growth of InGaAsP-based bulk and QW Schur, R., see Kitamura, M. 170 (19975)6 3
layers under nitrogen atmosphere 170 (1997) 109 Schwabe, R., see Kirpal, G. 170 (19971)6 7
Roehle, H., see Franke, D. 170 (1997) 113 Schweizer, H., see Geng, C. 170 (19974)1 8
Romanato, F., see Mazzer, M. 170 (19975)5 3 Schweizer, H., see Geiger, M. 170 (19975)5 8
Romanov, S.G., see Yates, H.M. 170 (19976)1 1 Schweizer, H.P., see Moser, M. 170 (19974)0 4
Author index 831
Scriven, G.J., A.W.R. Leitch, J.H. Neethling, Starr, R., see Mitra, P. 170 (1997) 542
V.V. Kozyrkov and V.J. Watters, The Steimetz, E., F. Schienle, J.-T. Zettler and W.
growth of Zn,As, on InP by atmospheric Richter, Stranski-Krastanov formation of
pressure MOVPE 170 (19978)1 3 InAs quantum dots monitored during growth
Seibt, M., see Tromson-Carli, A. 170 (1997) 549 by reflectance anisotropy spectroscopy and
Seifert, W., N. Carlsson, J. Johansson, M.-E. spectroscopic ellipsometry 170 (19972)0 8
Pistol and L. Samuelson, In situ growth of Stenzel, O., see Dadgar, A. 170 (19971)7 3
nano-structures by metal-organic vapour Steuber, F., see Scholz, F. 170 (19973)2 1
phase epitaxy 170 (1997) 39 Stillman, G.E., see Islam, M.R. 170 (19974)1 3
Seifert, W., see Carlsson, N. 170 (19971)2 7 Stoltz, S., see Peck, J. 170 (19975)2 3
Seki, H., see Koukitu, A. 170 (19973)0 6 Stolz, W., see Protzmann, H. 170 (19971)5 5
Setzer, B., see Hollfelder, M. 170 (19971)0 3 Stolz, W., see Spika, Z. 170 (19972)5 7
Shao, C.L., see Soga, T. 170 (19974)4 7 Stolz, W., see Rettig, R. 170 (19977)4 8
Shibata, K., see Takiguchi, T. 170 (19977)0 5 Strassburg, M., see Dadgar, A. 170 (19971)7 3
Shih, H.D., see Bevan, M.J. 170 (19974)6 7 Strauch, G., see Bergunde, T. 170 (1997) 66
Shimoyama, K., see Fujii, K. 170 (19976)7 9 Stringfellow, G.B., see Murata, H. 170 (19972)1 9
Shiojima, T., see Ohkubo, M. 170 (19971)7 7 Stringfellow, G.B., see Chun, Y.S. 170 (19972)6 3
Shiraki, Y., see Yaguchi, H. 170 (19973)5 3 Strupifski, W., see Malag, A. 170 (19974)0 8
Shiraki, Y., see Pan, W. 170 (19975)8 5 Stutzmann, M., see Ambacher, O. 170 (19973)3 5
Shmagin, I.K., see Keller, S. 170 (19973)4 9 Suemune, I., T. Obinata, K. Uesugi, H. Suzuki,
Shukla, N., see Patrikarakos, D.G. 170 (19972)1 5 H. Kumano, H. Nashiki and J. Nakahara,
Siepel, K., see Thompson, A.G. 170 (1997) 92 Growth of zincblende MgS /ZnSe superlat-
Silfvenius, C., B. Stalnacke and G. Landgren, tices and their heterointerface properties 170 (1997) 480
MOVPE growth of strain-compensated 1300 Suruceanu, G.I., see Mawst, L.J. 170 (1997) 383
nm In,_ ,Ga,As,P;_, quantum well struc- Suzuki, H., see Suemune, I. 170 (1997) 480
tures She 170 (1997) 122 Suzuki, M., M. Aoki, M. Komori, H. Sato and
Silvestre, L., A. Ougazzaden, D. Delprat, A. S. Minagawa, Silicon shadow mask MOVPE
Ramdane, C. Daguet and G. Patriarche, for in-plane thickness control of InGaAsP/
Study of growth rate and composition varia- InP structures 170 (19976)6 1
tions in metalorganic vapour phase selective Syganow, V., see Scholz, F. 170 (19973)2 1
area epitaxy at atmospheric pressure and Syllaios, A.J., see Bevan, M.J. 170 (19974)6 7
application to the growth of strained layer Symons, D.M., see Booker, G.R. 170 (19977)7 7
DBR lasers 170 (1997) 639 Syrbu, A.V., see Mawst, L.J. 170 (19973)8 3
Soerensen, G., see Watkins, S.P. 170 (1997) 788 Sys, C., see Zhang, X. 170 (1997) 83
Soga, T., T. Kato, K. Baskar, C.L. Shao, T.
Jimbo and M. Umeno, MOCVD growth of
high-quality AlGaAs on Si substrates for Tadatomo, K., see Ohuchi, Y. 170 (19973)2 5
high-efficiency solar cells 170 (19974)4 7 Taguchi, K., see Tsuji, M. 170 (19976)6 9
Séllner, J., see Heuken, M. 170 (1997) 30 Takahashi, N., see Koukitu, A. 170 (19973)0 6
Sollner, J., see Schneider, A. 170 (19977)6 7 Takamiya, S., see Takiguchi, T. 170 (19977)0 5
Son, C.S., see Kim, S.-I. 170 (19976)6 5 Takemi, M., see Takiguchi, T. 170 (19977)0 5
Son, M.H., see Kim, E.K. 170 (19978)0 3 Takemoto, A., see Takiguchi, T. 170 (19977)0 5
Sossna, E., see Kastner, M.J. 170 (19971)8 8 Takemura, M., see Goto, H. 170 (19975)1 0
Sotomayor-Torres, C.M., see Yates, H.M. 170 (19976)1 1 Takeuchi, T., see Tsuji, M. 170 (19976)6 9
Souliere, V., see Thévenot, V. 170 (19972)5 1 Taki, T., see Koukitu, A. 170 (19973)0 6
Spika, Z., see Protzmann, H. 170 (19971)5 5 Takiguchi, T., T. Itagaki, M. Takemi, A. Take-
Spika, Z., C. Zimprich, W. Stolz, E.O. Gobel, moto, Y. Miyazaki, K. Shibata, Y. Hisa, K.
J. Jiang, A. Schaper and P. Werner, Correla- Goto, Y. Mihashi, S. Takamiya and M.
tion of ordering formation and surface struc- Aiga, Selective-area MOCVD growth for
ture in (Galn)P using modulated MOVPE 170 (1997) 257 1.3 2m laser diodes with a monolithically
Spina, A., see Wajid, A. 170 (1997) 237 integrated waveguide lens 170 (1997) 705
Stafford, A., S.J.C. Irvine and C.L. Griffiths, In Tanahashi, T., see Ekawa, M. 170 (19976)8 5
situ measurement of the thermal and photo- Tanaka, S., S. Iwai and Y. Aoyagi, Reduction
assisted MOVPE of ZnTe using laser reflec- of the defect density in GaN films using
tometry 170 (1997) 182 ultra-thin AIN buffer layers on 6H-SiC 170 (1997) 329
Stall, R.A., see Thompson, A.G. 170 (1997) 92 Tapfer, L., see Rettig, R. 170 (1997) 748
Stalnacke, B., see Silfvenius, C. 170 (1997) 122 Taudt, W., see Heuken, M. 170 (1997) 30