Journal of Crystal Growth 1996: Vol 164 Index

9 Pages·1996·2.1 MB·English

joversor CRVSTAL
GROWTH
Journal of Crystal Growth 164 (1995) 496-501
Author index
Abernathy, C.R. 164 (1996) 143 time-of-flight low energy ion scattering and
Abernathy, C.R., 164 (1996) 248 RHEED 164 (1996) 185
Abernathy, C.R., 164 (1996) 420 Bensaoula, A. and A. Freundlich, Strain bal-
Ailey, S.K., see Du 164 (1996) 132 anced GaP /GaAs /InP /GaAs superlattices:
Albrecht, P., see Ki 164 (1996) 449 structural and electronic properties 164 (1996) 271
Alexandre, F., « 164 (1996) 314 Bensaoula, A., see Vilela 164 (1996) 465
Algra, E., se 164 (1996) 223 Bi, W.G., X.B. Mei and C.W. Tu, Growth
Alkemade, P., .. 164 (1996) 223 studies of GaP on Si by gas-source molecu-
Allen, SJ., see Sadw 164 (1996) 285 lar beam epitaxy 164 (1996) 256
Allovon, M., see Lege 164 (1996) 314 Bidnyk, S., see Wong 164 (1996) 159
Amano, C., A. Rud P.c *. |, J.P. Carlin Boucher, J., see Schelhase 164 (19963)3 9
and M. Ilegems, ‘ ‘owth .-..perature depen- Bousetta, A., see Taferner 164 (1996) 167
dence of the interfacet migration in chemi- Bousetta, A., see Bensaoula 164 (1996) 185
cal beam epitaxy of InP on non-planar sub- Boyd, A.R., T.B. Joyce and R. Beanland, An
strates 164 (1996) 321 in-situ laser-light scattering study of the de-
Ancilotti, M., see Benchimol 164 (1996) 22 velopment of surface topography during
Ando, H., S. Yamaura and T. Fujii, Recent GaAs and In ,Ga,_ , As chemical beam epi-
progress in the multi-wafer CBE system 164 (1996) 1 laxy 164 (1996) 51
Antonell, MJ., C.R. Abernathy and R.W. Boyd, A.R., TJ. Bullough, T. Farrell and T.B.
Gedridge, Tellurium doping of InP using Joyce, Growth mechanisms and morphology
triisopropylindium—diisopropy|ltellurium of Ar” laser assisted CBE of GaAs 164 (1996) 71
(TIPIn—DIPTe) 164 (19964)2 0 Brehmer, D., see Sadwick 164 (1996) 285
Aoyagi, Y., see Zhang 164 (1996) 28 Bullough, T.J., see Boyd 164 (1996) 71
Araki, T., see Inoue 164 (1996) 88 Bullough, T_J., see Davidson 164 (1996) 383
Asahi, H., see Yamamoto 164 (19961)1 7 Butzke, S., see Werner 164 (1996) 223
Asami, K., see Yamamoto 164 (19961)1 7
Aspnes, D.E., see Dietz 164 (1996) 34
Cacciatore, C., see Rigo 164 (1996) 430
Bachem, K.H., see Davidson 164 (1996) 396 Carlin, J.F., see Amano 164 (1996) 321
Bachmann, K.J., see Dietz 164 (1996) 34 Carlin, J.F., A. Rudra and M. Ilegems, Pseudo-
Baumeister, H., see Veuhoff 164 (1996) 402 morphic InGaAs/In(Ga)P bidimensional
Beam Ill, E.A. and H.F. Chau, The use of CBr, electron gas grown by chemical beam epi-
and SiBr, doping in MOMBE and applica- taxy 164 (1996) 470
tion to InP-based heterojunction bipolar Carpenter, G., see Van Hove 164 (1996) 154
transistor structures 164 (1996) 389 Chandrasekhar, S., see Hamm 164 (1996) 362
Beanland, R., see Boyd 164 (1996) 51 Chang, Y.G., see Chen 164 (1996) 460
Benchimol, J.L. and M. Ancilotti, Simple high Chau, H.F., see Beam III 164 (1996) 389
conductance gas line for high growth rate Chen, J.X., see Li 164 (1996) 84
and low transient 164 (1996) 22 Chen, J.X., A.Z. Li, ¥.C. Ren, M. Qi and Y.G.
Benchimol, J.L., see Lamare 164 (1996) 122 Chang, Parametric study on lattice-matched
Benchimol, J.L., see Legay 164 (19963)1 4 and pseudomorphic InGaAs/InAlAs/InP
Bensaoula, A., see Taferner 164 (1996) 167 modulation-doped heterostructures grown by
Bensaoula, A., W.T. Taferner, E. Kim and A. GSMBE 164 (19964)6 0
Bousetta, The nitridation of GaAs and GaN Chen, W.L., G.O. Munns, X. Wang and G.I.
deposition on GaAs examined by in situ Haddad, Co-integration of high speed InP-
joversor CRVSTAL
GROWTH
Journal of Crystal Growth 164 (1995) 496-501
Author index
Abernathy, C.R. 164 (1996) 143 time-of-flight low energy ion scattering and
Abernathy, C.R., 164 (1996) 248 RHEED 164 (1996) 185
Abernathy, C.R., 164 (1996) 420 Bensaoula, A. and A. Freundlich, Strain bal-
Ailey, S.K., see Du 164 (1996) 132 anced GaP /GaAs /InP /GaAs superlattices:
Albrecht, P., see Ki 164 (1996) 449 structural and electronic properties 164 (1996) 271
Alexandre, F., « 164 (1996) 314 Bensaoula, A., see Vilela 164 (1996) 465
Algra, E., se 164 (1996) 223 Bi, W.G., X.B. Mei and C.W. Tu, Growth
Alkemade, P., .. 164 (1996) 223 studies of GaP on Si by gas-source molecu-
Allen, SJ., see Sadw 164 (1996) 285 lar beam epitaxy 164 (1996) 256
Allovon, M., see Lege 164 (1996) 314 Bidnyk, S., see Wong 164 (1996) 159
Amano, C., A. Rud P.c *. |, J.P. Carlin Boucher, J., see Schelhase 164 (19963)3 9
and M. Ilegems, ‘ ‘owth .-..perature depen- Bousetta, A., see Taferner 164 (1996) 167
dence of the interfacet migration in chemi- Bousetta, A., see Bensaoula 164 (1996) 185
cal beam epitaxy of InP on non-planar sub- Boyd, A.R., T.B. Joyce and R. Beanland, An
strates 164 (1996) 321 in-situ laser-light scattering study of the de-
Ancilotti, M., see Benchimol 164 (1996) 22 velopment of surface topography during
Ando, H., S. Yamaura and T. Fujii, Recent GaAs and In ,Ga,_ , As chemical beam epi-
progress in the multi-wafer CBE system 164 (1996) 1 laxy 164 (1996) 51
Antonell, MJ., C.R. Abernathy and R.W. Boyd, A.R., TJ. Bullough, T. Farrell and T.B.
Gedridge, Tellurium doping of InP using Joyce, Growth mechanisms and morphology
triisopropylindium—diisopropy|ltellurium of Ar” laser assisted CBE of GaAs 164 (1996) 71
(TIPIn—DIPTe) 164 (19964)2 0 Brehmer, D., see Sadwick 164 (1996) 285
Aoyagi, Y., see Zhang 164 (1996) 28 Bullough, T.J., see Boyd 164 (1996) 71
Araki, T., see Inoue 164 (1996) 88 Bullough, T_J., see Davidson 164 (1996) 383
Asahi, H., see Yamamoto 164 (19961)1 7 Butzke, S., see Werner 164 (1996) 223
Asami, K., see Yamamoto 164 (19961)1 7
Aspnes, D.E., see Dietz 164 (1996) 34
Cacciatore, C., see Rigo 164 (1996) 430
Bachem, K.H., see Davidson 164 (1996) 396 Carlin, J.F., see Amano 164 (1996) 321
Bachmann, K.J., see Dietz 164 (1996) 34 Carlin, J.F., A. Rudra and M. Ilegems, Pseudo-
Baumeister, H., see Veuhoff 164 (1996) 402 morphic InGaAs/In(Ga)P bidimensional
Beam Ill, E.A. and H.F. Chau, The use of CBr, electron gas grown by chemical beam epi-
and SiBr, doping in MOMBE and applica- taxy 164 (1996) 470
tion to InP-based heterojunction bipolar Carpenter, G., see Van Hove 164 (1996) 154
transistor structures 164 (1996) 389 Chandrasekhar, S., see Hamm 164 (1996) 362
Beanland, R., see Boyd 164 (1996) 51 Chang, Y.G., see Chen 164 (1996) 460
Benchimol, J.L. and M. Ancilotti, Simple high Chau, H.F., see Beam III 164 (1996) 389
conductance gas line for high growth rate Chen, J.X., see Li 164 (1996) 84
and low transient 164 (1996) 22 Chen, J.X., A.Z. Li, ¥.C. Ren, M. Qi and Y.G.
Benchimol, J.L., see Lamare 164 (1996) 122 Chang, Parametric study on lattice-matched
Benchimol, J.L., see Legay 164 (19963)1 4 and pseudomorphic InGaAs/InAlAs/InP
Bensaoula, A., see Taferner 164 (1996) 167 modulation-doped heterostructures grown by
Bensaoula, A., W.T. Taferner, E. Kim and A. GSMBE 164 (19964)6 0
Bousetta, The nitridation of GaAs and GaN Chen, W.L., G.O. Munns, X. Wang and G.I.
deposition on GaAs examined by in situ Haddad, Co-integration of high speed InP-
Author index
based HBTs and RTDs using chemical beam Foord, J.S., K.P. Loh, N.K. Singh, R.B. Jack-
epitaxy 164 (19964)5 4 man and G.J. DavGriowteh asnd ,mech a-
Chen, W.L., see Munns 164 (1996) 476 nistic studies of diamond formation by
Chow, P.P., see Van Hove 164 (1996) 154 chemical beam epitaxy using methyl and
Cordier, Y., see Ortion 164 (1996) 97 acetylene precursors 164 (19962)0 8
Cotta, M.A., M.M.G. de Carvalho, M.A.A. Pu- Fouchet, S., see Legay 164 (19963)1 4
denzi, K.M.I. Landers, C.F. de Souza, R.B. Freer, R.W., see Whitaker 164 (19962)9 6
Martins, R. Landers and O. Teschke, Sur- Freundlich, A., see Bensaoula 164 (19962)7 1
face morphologies of Be-doped homoepi- Freundlich, A., see Vilela 164 (19964)6 5
taxial InP films 164 (19964)0 9 Fujii, T., see Ando 164 (1996) 1
Cui, J., see Zhang 164 (1996) 28 Fujita, Sg., see Fujita 164 (1996) 196
Fujita, Sz. Y. Kawakami and Sg. Fujita,
MO(GS)MBE and photo-MO(GS)MBE of
Davidson, B.R., L. Hart, R.C. Newman, T.B.
II-VI semiconductors 164 (1996) 196
Joyce and TJ. Bullough, Characterization
Fukuchi, F., see Oh 164 (19964)2 5
of carbon delta-doping GaAs superlattices
grown by chemical beam epitaxy using CBr, 164 (1996) 383
Garcia, J.Ch., see Ortion 164 (1996) 97
Davidson, B.R., R.C. Newman, T. Kanedo, O.
Gasparotto, A., see Rigo 164 (19964)3 0
Naji and K.H. Bachem, The rotation of the
Gedridge, R.W., see Sadwick 164 (1996) 285
alignment by 90° of (H-(C,, ),) complexes
Gedridge, R.W., see Antonell 164 (19964)2 0
resulting from metalorganic molecular beam
Geva, M., see Hamm 164 (19963)6 2
epitaxy or metalorganic vapour phase epi-
Gibis, R., see Schelhase 164 (1996) 339
taxy growth on GaAs(001) using trimethyl-
Gibis, R., see Kiinzel 164 (19964)4 9
gallium 164 (1996) 396
Gonda, S., see Yamamoto 164 (1996) 117
Davies, G.J., see Foord 164 (1996) 190
Goodhew, P.J., see Joyce 164 (1996) 371
Davies, G.J., see Foord 164 (1996) 208
Goodhew, P.J., see Petkos 164 (19964)1 5
Davis, R.F., S. Tanaka, L.B. Rowland, R.S.
Goronkin, H., see Shiralagi 164 (1996) 334
Kern, Z. Sitar, S.K. Ailey and C. Wang,
Gotoda, M., H. Sugimoto, T. Isu and M.
Growth of SiC and III-V nitride thin films
Nunoshita, Grown mirrors of InP formed by
via gas-source molecular beam epitaxy and
dry etching and selective CBE regrowth for
their characterization 164 (1996) 132
short cavity lasers 164 (19963)0 8
De Carvalho, M.M.G., see Cotta 164 (19964)0 9
Grant, J.T., see Li 164 (1996) 180
De Franceschi, R., see Rigo 164 (1996) 327
Grattepain, C., see Ortion 164 (1996) 97
De Lange, B., see Werner 164 (1996) 223 Grunberg, P., see Amano 164 (1996) 321
De Souza, C.F., see Cotta 164 (19964)0 9
Deng, F., see Wong 164 (1996) 159
Haddad, G.1., see Chen 164 (19964)5 4
Dietz, N., U. Rossow, D.E. Aspnes and K.J. Haddad, G.1., see Munns 164 (19964)7 6
Bachmann, Real-time optical monitoring of Hamacher, M., see Kiinzel 164 (19964)4 9
Ga,In,_,P and GaP heteroepitaxy on Si
Hamm, R.A., S. Chandrasekhar, L. Lunardi, M.
under pulsed chemical beam conditions 164 (1996) 34
Geva, R. Malik, D. Humphrey and R. Ryan,
Dong, H.K., see Li 164 (1996) 112
Materials and electrical characteristics of
Dong, H.K., see Wong 164 (1996) 159 carbon-doped Gay ,;Ing 5, As using carbon-
Dong, H.K., see Li 164 (1996) 180
tetrabromide by MOMBE for HBT device
Dorren, B.H.P., see Vreeburg 164 (19964)4 2 applications 164 (19963)6 2
Hart, L., see Fernandez 164 (19962)4 1
Farrell, T., see Boyd 164 (1996) 71 Hart, L., see Davidson 164 (19963)8 3
Fernandez, J.M., see Zhang 164 (1996) 40 Hayashi, T., see Yamamoto 164 (1996) 117
Fernandez, J.M., see Joyce 164 (19962)1 4 Hays, J., see Wong 164 (1996) 159
Fernandez, J.M., L. Hart, X.M. Zhang, M.H. Heinecke, H., see Marheineke 164 (1996) 16
Xie, J. Zhang and B.A. Joyce, Silicon /sili- Heinecke, H., see Wachter 164 (19963)0 2
con—germanium multiple quantum wells Heinecke, H., see Veuhoff 164 (19964)0 2
grown by gas-source molecular beam epi- Homma, Y., see Inoue 164 (1996) 88
taxy: hydrogen coverage and interfacial Hou Xun, see Wang Xiaoliang 164 (19962)8 1
abruptness 164 (1996) 241 Humphrey, D., see Hamm 164 (1996) 362
Foord, J.S., C.L. Levoguer and G.J. Davies, An Hwu, RJ., see Sadwick 164 (19962)8 5
investigation of ZnSe growth by chemical
beam epitaxy using modulated beam scatter- Tlegems, M., see Amano 164 (1996) 321
ing and related techniques 164 (1996) 190 llegems, M., see Carlin 164 (19964)7 0
498 Author index
Inoue, N., Y. Homma, J. Osaka and T. Araki, Kiinzel, H., P. Albrecht, R. Gibis, M. Hamacher
Behavior of monolayer holes on MBE grown and S. Schelhase, MOMBE growth of high
GaAs surfaces during annealing revealed by quality GalnAsP (A, = 1.05 4m) for wave-
in situ scanning electron microscopy 164 (1996) 88 guide applications 164 (1996) 449
Isu, T., see Gotoda 164 (1996) 308 Kuo, H.C., see Sato 164 (1996) 47
Kuo, J.M., see Sato 164 (1996) 47
Jackman, R.B., see Foord 164 (19962)0 8
Jeppesen, S., see Junno 164 (1996) 66
Jeppesen, S., see Miller 164 (19963)4 5 Lamare, B., J.L. Benchimol, P. Ossart and G.
Johnson, A.D., see Whitaker 164 (19961)2 5 Le Roux, CBE growth of InGaAs(P) alloys
Jones, .. See Santana 164 (19962)4 8 using TDMAAs and TBP 164 (1996) 122
Jones, T.S., see Naji 164 (1996) 58 Landers, K.M.L., see Cotta 164 (19964)0 9
Joyce, .. see Zhang 164 (1996) 40 Landers, R., see Cotta 164 (19964)0 9
Joyce, B.A., see Naji 164 (1996) 58 Lau, S.S., see Wong 164 (1996) 159
Joyce, B.A., J.M. Fernandez, M.H. Xie, A. Laune, F., see Legay 164 (19963)1 4
Matsumura, J. Zhang and A.G. Taylor, Le Roux, G., see Lamare 164 (1996) 122
Growth and doping of Si and SiGe films by Lee, El-Hang, see Kim 164 (1996) 356
hydride gas-source molecular beam epitaxy 164 (19962)1 4 Lee, El-Hang, see Ro 164 (19963)7 7
Joyce, B.A., see Fernandez 164 (19962)4 1 Lee, H.P., see Sato 164 (1996) 47
Joyce, T.B., see Boyd 164 (1996) 51 Lee, P.P., see Sadwick 164 (1996) 285
Joyce, T.B., see Boyd 164 (1996) 71 Lees, A.K., see Zhang 164 (1996) 40
Joyce, T.B., S.P. Westwater, P.J. Goodhew and Legay, P., F. Alexandre, J.L. Benchimol, M.
R.E. Pritchard, Growth of carbon-doped Allovon, F. Laune and S. Fouchet, Selective
GaAs, AlGaAs and InGaAs by chemical area chemical beam epitaxy for butt-cou-
beam epitaxy and the application of in-situ pling integration 164 (1996) 314
monitoring 164 (1996) 371 Levoguer, C.L., see Foord 164 (1996) 190
Joyce, T.B., see Davidson 164 (1996) 383 Lew, A.Y., see Yan 164 (1996) 77
Joyce, T.B., see Petkos 164 (19964)1 5 Leys, M.R., see Rongen 164 (1996) 263
Junno, B., S. Jeppesen, M.S. Miller and L. Leys, M.R., see Vreeburg 164 (1996) 442
Samuelson, A comparison of RHEED re- Li, A.Z., J.X. Chen, M. Qi and Y.C. Ren, The
construction phases on (100) InAs, GaAs effect of III—V ratio at the substrate surface
and InP 164 (1996) 66 on the quality of inP grown by GSMBE 164 (1996) 84
i, A.Z., see Chen 164 (19964)6 0
Kanedo, T., see Davidson 164 (1996) 396 i, N.Y., H.K. Dong, W.S. Wong and C.W. Tu,
Kaneko, T., see Naji 164 (1996) 58 An evaluation of alternative precursors in
Kang, H.-C., see Oh 164 (19964)2 5 chemical beam epitaxy: tris-dimethylamino-
Kawakami, Y., see Fujita 164 (1996) 196 arsenic, tris-dimethylaminophosphorus, and
Kern, R.S., see Davis 164 (1996) 132 tertiarybutylphosphine 164 (19961)1 2
Kim, C.W., G.B. Stringfellow and L.P. Sad- i, N.Y., see Wong 164 (19961)5 9
wick, CBE growth of InP using BPE and i, N.Y., W.S. Wong, D.H. Tomich, H.K. Dong,
TBP: a comparative study 164 (1996) 104 J.S. Solomon, J.T. Grant and C.W. Tu,
Kim, E., see Taferner 164 (1996) 167 Growth study of chemical beam epitaxy of
Kim, E., see Bensaoula 164 (1996) 185 GaN ,P,_, using NH, and _tertiary-
Kim, Sung-Bock, Seong-Ju Park, Jeong-Rae Ro butylphosphine 164 (1996) 180
and El-Hang Lee, Fabrication of InGaAs / i, S.. Q. Xiang, D. Wang and K.L. Wang,
GaAs quantum wires on a non-(I11) V- Investigation of facet formation and compe-
grooved GaAs substrate by chemical beam tition in MBE growth 164 (1996) 235
epitaxy 164 (1996) 356 Loh, K.P., see Foord 164 (1996) 208
Kim, Sung-Bock, see Ro 164 (1996) 377 Lunardi, L., see Hamm 164 (1996) 362
Kitatani, T., see Kondow 164 (1996) 175
Konagai, M., see Oh 164 (1996) 425
Kondow, M., K. Uomi, T. Kitatani, S. Watahiki Mackenzie, J.D., C.R. Abernathy, J.D. Stewart
and Y. Yazawa, Extremely large N content and G.T. Muhr, Growth of Group Ill ni-
(up to 10%) in GaNAs grown by gas-source trides by chemical beam epitaxy 164 (1996) 143
molecular beam epitaxy 164 (1996) 175 Madella, M., see Rigo 164 (1996) 430
Kong Meiying, see Wang Xiaoliang 164 (1996) 281 Maes, J.W., see Werner 164 (1996) 223
Kowalski, B., see Miller 164 (1996) 345 Malik, R., see Hamm 164 (1996) 362
Kiinzel, H., see Schelhase 164 (19963)3 9 Mandeville, P., see Moore 164 (1996) 485
Author index
Marheineke, B., M. Popp and H. Heinecke, Ontion, J.M., Y. Cordier, J.Ch. Garcia and C.
Growth of GalnAs(P) using a multiwafer Grattepain, Temperature dependence of of
MOMBE 164 (1996) 16 GaAs chemical etching using AsCl, 164 (1996) 97
Martin, T., see Whitaker 164 (19961)2 5 Osaka, J., see Inoue 164 (1996) 88
Martin, T., see Whitaker 164 (19962)9 6 Ossart, P., see Lamare 164 (1996) 122
Martins, R.B., see Cotta 164 (19964)0 9
Matsumura, A., see Joyce 164 (19962)1 4
Maximov, I., see Miller 164 (19963)4 5 Papuzza, C., see Rigo 164 (19964)3 0
McCormick, K., see Sadwick 164 (19962)8 5 Paraskevopoulos, A., see Schelhase 164 (1996) 339
Medelci, N., see Vilela 164 (19964)6 5 164 (1996) 356
Mei, X.B., see Bi 164 (19962)5 6 164 (1996) 377
Miller, M.S., see Junno 164 (1996) 66 164 (19962)0 2
Miller, M.S., S. Jeppesen, B. Kowalski, I. Max- Patel, M., see Sadwick 164 (1996) 285
imov and L. Samuelson, Directional depen- Pearton, S.J., see Santana 164 (19962)4 8
dence of InAs island formation on patterned Pemble, M.E., see Zhang 164 (1996) 40
GaAs 164 (1996) 345 Petkos, G.M., PJ. Goodhew and T.B. Joyce,
Miner, C.J., see Moore 164 (19964)8 5 Sulphur doping of InGaAs using diethylsul-
Moore, W.T., P. Mandeville, R.W. Streater and phide 164 (19964)1 5
C.J. Miner, Device quality AlGaAs grown Pidduck, A.J., see Whitaker 164 (1996) 125
by chemical beam epitaxy 164 (1996) 485 164 (1996) 16
Mubr, G.T., see Mackenzie 164 (1996) 143 164 (19964)0 2
Munns, G.O., see Chen 164 (19964)5 4 Pritchard, R.E., see Joyce 164 (1996) 371
Munns, G.O., W.L. Chen and G.l. Haddad, Pudenzi, M.A.A., see Cotta 164 (19964)0 9
Heterojunction bipolar transistors with low
temperature Be-doped base grown by CBE 164 (1996) 476 164 (1996) 84
164 (19964)6 0
Nagatomo, T., see Okumura 164 (1996) 149
Naji, O., J. Zhang, T. Kaneko, T.S. Jones, J.H.
Neave and B.A. Joyce, A detailed time of 164 (1996) 223
flight study of the cracking pattern trimeth- 164 (1996) 40
ylgallium; implications for MOMBE growth 164 (1996) 58 164 (1996) 84
Naji, O., see Davidson 164 (19963)9 6 164 (19964)6 0
Nasi, L., see Rigo 164 (19964)3 0 Renaud, P., see Vilela 164 (19964)6 5
Neave, J.H., see Naji 164 (1996) 58 Rigo, C., R. Vincenzoni, A. Stano and R. De
Nelson, E., see Van Hove 164 (1996) 154 Franceschi, Chemical beam epitaxy on pat-
Newly, J.P., see Whitaker 164 (1996) 125 terned substrates of InGaAs/InP het-
Newman, R.C., see Davidson 164 (1996) 383 erostructures for optoelectronics and nano-
Newman, R.C., see Davidson 164 (19963)9 6 164 (1996) 327
Nikols, M., see Sadwick 164 (1996) 285 Rigo, C., M. Madella, C. Papuzza, C. Caccia-
Nunoshita, M., see Gotoda 164 (19963)0 8 tore, A. Stano, A. Gasparotto, G. Salviati
and L. Nasi, InP:Fe semi-insulating layers
Oei, Y.S., see Rongen 164 (1996) 263 by chemical beam epitaxy 164 (19964)3 0
Oei, Y.S., see Vreeburg 164 (1996) 442 Ro, Jeong-Rae, see Kim 164 (1996) 356
Ogle, W., see Tong 164 (19962)0 2 Ro, Jeong-Rae, Seong-Ju Park, Sung-Bock Kim
Oh, J.-H., F. Fukuchi, H.-C. Kang and M. and El-Hang Lee, CBE growth of carbon-
Konagai, Influence of H, on electrical and doped p-type InGaAs using trimethylindium
optical properties of carbon-doped InP and unprecracked monoethylarsine as car-
grown by MOMBE using tertiarybutylphos- bon auto-doping precursor 164 (1996) 377
phine (TBP) 164 (19964)2 5 Rongen, R.T.H., M.R. Leys, H. Vonk, J.H.
Ohta, K., see Okumura 164 (1996) 149 Wolter and Y.S. Oci, Substitution of InP
Okumura, H. and S. Yoshida, Compositional layers to InAs for strain compensation in
micro-area modification of GaAs surfaces Ga In, _, As/InP superlattices 164 (1996) 263
by an electron beam under phosphorus flux 164 (1996) 92 Rongen, R.T.H., see Vreeburg 164 (19964)4 2
Okumura, H., K. Ohta, T. Nagatomo and S. Rossow, U., see Dietz 164 (1996) 34
Yoshida, Observation of MBE-grown cubic- Rowland, L.B., see Davis 164 (1996) 132
GaN /GaAs and cubic-GaN /3C-SiC inter- Rudra, A., see Amano 164 (1996) 321
faces by high resolution transmission elec- Rudra, A., see Carlin 164 (19964)7 0
tron microscope 164 (1996) 149 Ryan, R., see Hamm 164 (1996) 362
500 Author index
Sadwick, L.P., see Kim 164 (1996) 104 Teschke, O., see Cotta 164 (19964)0 9
Sadwick, L.P., P.P. Lee, M. Patel, M. Nikols, Tomich, D.H., see Li 164 (1996) 180
RJ. Hwu, J.E. Shield, D.C. Streit, D. Tong, W., B.K. Wagner, T.K. Tran, W. Ogle,
Brehmer, K. McCormick, S.J. Allen and W. Park and C.J. Summers, Kinetics of
R.W. Gedridge, Epitaxial dysprosium phos- chemical beam epitaxy for high quality ZnS
phide grown by gas-source and solid-source film growth 164 (1996) 202
MBE on gallium arsenide substrates 164 (1996) 285 Tran, T.K., see Tong 164 (1996) 202
Salviati, G., see Rigo 164 (1996) 430 Treichler, R., see Veuhoff 164 (1996) 402
Samuelson, L., see Junno 164 (1996) 66 Tsui, R., see Shiralagi 164 (1996) 334
Samuelson, L., see Miller 164 (1996) 345 Tsui, R., K. Shiralagi and J. Shen, Growth of
Santana, C.J., C.R. Abernathy, S.J. Pearton and resonant interband tunneling diodes using
K.S. Jones, Initial growth stages of Al,- trimethylamine alane 164 (1996) 491
Ga, _ ,P on epitaxial silicon 164 (1996) 248 .. See Yan 164 (1996) 77
Sasaki, M., see Yoshida 164 (1996) 291 .. See Li 164 (1996) 112
Sato, D.L., H.P. Lee, J.M. Kuo and H.C. Kuo, .. See Wong 164 (1996) 159
In-situ pyrometric interferometry monitor- . See Li 164 (1996) 180
ing of Ing sGag<P/Ing;Aly;P material .. See Bi 164 (1996) 256
systems during gas-source molecular beam . See Yan 164 (1996) 276
epitaxy growth 164 (1996) 47
Schelhase, S., J. Béttcher, R. Gibis, H. Kiinzel Uomi, K., see Kondow 164 (1996) 175
and A. Paraskevopoulos, MOMBE selective
infill growth of InP:Si and InGaAs:Si and Van der Drift, E., see Werner 164 (1996) 223
large area MOMBE regrowth 164 (1996) 339 Van der Tol, J.J.G.M., see Vreeburg 164 (1996) 442
Schelhase, S., see Kiinzel 164 (1996) 449 Van Hove, J.M., G. Carpenter, E. Nelson, A.
Shen, J., see Tsui 164 (1996) 491 Wowchak and P.P. Chow, III-N light emit-
Shield, J.E., see Sadwick 164 (1996) 285 ting diodes fabricated using RF nitrogen gas
Shiralagi, K., M. Walther, R. Tsui and H. source MBE 164 (1996) 154
Goronkin, Selective InAs growth by chemi- Van Rooy, M., see Werner 164 (1996) 223
cal beam epitaxy 164 (1996) 334 Verbeek, B.H., see Vreeburg 164 (1996) 442
Shiralagi, K., see Tsui 164 (1996) 491 Veuhoff, E., H. Baumeister, R. Treichler, M.
Shukla, N., see Zhang 164 (1996) 40 Popp and H. Heinecke, Zn doping of
Singh, N.K., see Foord 164 (1996) 208 InP /GalnAsP device structures in metalor-
Sitar, Z., see Davis 164 (1996) 132 ganic molecular beam epitaxy using dieth-
Solomon, J.S., see Li 164 (1996) 180 ylzine 164 (19964)0 2
Somers, M., see Werner 164 (1996) 223 Vilela, M.F., N. Medelci, A. Bensaoula, A.
Song, J.J., see Wong 164 (1996) 159 Freundlich and P. Renaud, First epitaxial
Stano, A., see Rigo 164 (1996) 327 InP tunnel junctions grown by chemical
Stano, A., see Rigo 164 (1996) 430 beam epitaxy 164 (1996) 465
Stewart, J.D., see Mackenzie 164 (1996) 143 Vincenzoni, R., see Rigo 164 (1996) 327
Storm, A., see Werner 164 (1996) 223 Vonk, H., see Rongen 164 (1996) 263
Streater, R.W., see Moore 164 (1996) 485 Vonk, H., see Vreeburg 164 (1996) 442
Streit, D.C., see Sadwick 164 (1996) 285 Vreeburg, C.G.M., Y.S. Oei, B.H. Verbeek,
Stringfellow, G.B., see Kim 164 (1996) 104 J.J.G.M. van der Tol, R.T.H. Rongen, H.
Sugimoto, H., see Gotoda 164 (19963)0 8 Vonk, M.R. Leys, B.H.P. Dorren and J.H.
Sugiura, H.. MOMBE growth of InAsP laser Wolter, Strained GalnAs / InP MQW layers
materials 164 (1996) 434 grown by CBE for optical components 164 (1996) 442
Summers, C.J., see Tong 164 (1996) 202
Sun Dianzhao, see Wang Xiaoliang 164 (1996) 281 Wachter, M. and H. Heinecke, Beam geometri-
cal effects on planar selective area epitaxy
Taferner, W.T., A. Bensaoula, E. Kim and A. of InP /GalnAs heterostructures 164 (19963)0 2
Bousetta, The investigation of GaN growth Wagner, B.K., see Tong 164 (1996) 202
on silicon and sapphire using in-situ time- Walther, M., see Shiralagi 164 (1996) 334
of-flight low energy ion scattering and Wang, C., see Davis 164 (1996) 132
RHEED 164 (1996) 167 Wang, D., see Li 164 (1996) 235
Taferner, W.T., see Bensaoula 164 (1996) 185 Wang, K.L., see Li 164 (1996) 235
Tanaka, S., see Davis 164 (1996) 132 Wang, X., see Chen 164 (1996) 454
Taylor, A.G., see Zhang 164 (1996) 40 Wang Xiaoliang, Sun Dianzhao, Kong Meiy-
Taylor, A.G., see Joyce 164 (19962)1 4 ing, Hou Xun and Zeng Yiping, GSMBE
Author index
growth and PL investigation of lattice- epitaxy growth and etching of GaSb on flat
matched InGaAs /InP quantum wells 164 (1996) 281 and high-index surfaces uusing trisdimeth-
Watahiki, S., see Kondow 164 (1996) 175 ylaminoantimony 164 (1996) 117
Werner, K., A. Storm, S. Butzke, J.W. Maes, Yamaura, S., see Ando 164 (1996) 1
M. van Rooy, P. Alkemade, E. Algra, M. Yan, C.H., A.Y. Lew, E.T. Yu and C.W. Tu,
Somers, B. de Lange, E. van der Drift, T. P,-induced P /As exchange on GaAs during
Zijlstra and S. Radelaar, Gas source MBE gas-source molecular beam epitaxy growth
growth of Si/SiGe device materials 164 (1996) 223 interruptions
Westwater, S.P., see Joyce 164 (1996) 371 Yan, C.H. and C.W. Tu, Synthesis of highly
Whitaker, TJ., T. Martin, A.D. Johnson, AJ. strained In ,Ga,_,P/ In,Ga,_ ,As/ In,-
Pidduck and J.P. Newly, Atomic force mi- Ga, _ ,P quantum well structures with strain
croscopy studies of substrate cleaning using compensation 164 (1996) 276
tris(dimethylamino)arsenic and tris(dimeth- Yazawa, Y., see Kondow 164 (1996) 175
ylamino)antimony and investigations of sur- Yoshida, S., see Okumura 164 (1996) 92
face decomposition mechanisms 164 (1996) 125 Yoshida, S., see Okumura 164 (1996) 149
Whitaker, T.J., T. Martin and R.W. Freer, In- Yoshida, S. and M. Sasaki, In situ selective
creasing the range of growth temperatures area growth of GaAs, AlAs, and AlGaAs
available for GaAs selective area growth using MOMBE 164 (19962)9 1
using triisopropylgallium and arsine 164 (19962)9 6 Yu, E.T., see Yan 164 (1996) 77
Wolter, J.H., see Rongen 164 (1996) 263
Wolter, J.H., see Vreeburg 164 (19964)4 2
Wong, W.S., see Li 164 (1996) 112 Zeng Yiping, see Wang Xiaoliang 164 (19962)8 1
Wong, W.S., N.Y. Li, H.K. Dong, F. Deng, Zhang, J., A.K. Lees, A.G. Taylor, D. Rais-
S.S. Lau, C.W. Tu, J. Hays, S. Bidnyk and beck, N. Shukla, J.M. Fernandez, B.A. Joyce
J.J. Song, Growth of GaN by gas-source and M.E. Pemble, In-situ monitoring of Si
molecular beam epitaxy by ammonia and by and SiGe growth on Si(001) surfaces during
plasma generated nitrogen radicals 164 (1996) 159 gas-source molecular beam epitaxy using
Wong, W.S., see Li 164 (1996) 180 reflectance anisotropy 164 (1996) 40
Wowchak, A., see Van Hove 164 (1996) 154 Zhang, J., see Naji 164 (1996) 58
Zhang, J., see Joyce 164 (19962)1 4
Xiang, Q., see Li 164 (1996) 235 Zhang, J., see Fernandez 164 (19962)4 1
Xie, M.H., see Joyce 164 (19962)1 4 Zhang, S., J. Cui and Y. Aoyagi, Growth con-
Xie, M.H., see Fernandez 164 (1996) 241 trol of GaAs using short-pulse supersonic
beam epitaxy 164 (1996) 28
Yamamoto, K., H. Asahi, T. Hayashi, K. Asami Zhang, X.M., see Fernandez 164 (1996) 241
and S. Gonda, Metalorganic molecular beam Zijlstra, T., see Werner 164 (1996) 223
journo CRYSTAL
GROWTH
Journal of Crystal Growth 164 (1996) 502-503
Subject index
Aluminum arsenide nitride 175
— antimonide 491 arsenide phosphide 77, 92
— arsenide 291, 454 indium arsenide 51, 122, 263, 276, 281, 362, 371, 442, 454,
— nitride 132, 143, 159 460, 485
Apparatus indium arsenide phosphide 16, 122, 314, 402, 449
— for chemical beam epitaxy indium phosphide |, 34, 47, 276, 302, 470
— of I-V compounds | nitride 143, 149, 154, 159, 167, 185
for laser assisted chemical beam epitaxy nitride phosphide 180
— of gallium arsenide 71 phosphide 34, 92, 112, 256, 271
for thin film growth
— by molecular beam epitaxy, electron beam assisted Heterojunction, see Device characterization
-— — of gallium arsenide 92
Indium
Device characterization — aluminum arsenide 460
diodes 334, 465, 491 aluminum phosphide 47
electronic materials 285, 383, 415, 485
arsenide 66, 125, 334, 345
heterojunction 389 arsenide phosphide 434
lasers 308, 434, 485 gallium arsenide 327, 339, 356, 377, 389, 415, 470, 476
light emitting diodes 154 gallium arsenide phosphide 321
optoelectronic materials 396 nitride 143
quantum wells 241, 263, 276, 281, 434, 442, 485, 491 phosphide 66, 84, 112, 263, 271, 281, 302, 308, 314, 321, 327,
quantum wires 356 339, 362, 389, 402, 409, 420, 425, 430, 442, 454, 460, 465,
transistors 223, 362, 389, 454, 460, 476 470, 476
wave guides 449
Diamond 208
Kinetics
Diffusional control
— of diffusion 302
— of zinc 402
— of growth 34, 58, 112, 167, 190, 202, 208, 214, 248, 302, 327
Diodes, see Device characterization
— of interface control 214, 409
Doping
— of nucleation 167, 190, 248, 302
— of III-V by carbon 362, 371, 377, 383, 389, 425
— of III-V by sulphur 415
Lasers, see Device characterization
Light emitting diodes, see Device characterization
Electronic materials, see Device characterization
Epitaxy, see Thin film growth
Etching Optoelectronic materials, see Device characterization
— chemical 97
— reactive ion 308 Phase diagram
— of indium arsenide 334
Gallium Precursor
aluminum arsenide 1, 22, 28, 291, 371, 485 — for doping 389
aluminum nitride 154 — for gallium antimonide 117
aluminum phosphide 248 - for indium phosphide 104, 420
antimonide 117, 491
arsenide 1, 51, 58, 66, 71, 77, 88, 112, 125, 185, 271, 291, 296, Quantum wells, see Device characterization
356, 371, 383, 396, 485 Quantum wires, see Device characterization
Subject index
Silicon 40, 214, 223, 235, 241 of indium aluminum phosphide 47
— carbide 132 of indium gallium phosphide 47
— germanium 40, 214, 223, 241 of indium phosphide 84, 281, 460
Superlattices, multilayers of silicon 40, 214, 223, 241
— of I1l-V compounds 34, 263, 271, 302, 327, 442 of silicon carbide 132
Surface morphology of silicon germanium 40, 214, 223, 241
— of gallium arsenide 51, 71, 88, 125 of zinc cadmium selenide 196
of indium antimonide 125 of zinc cadmium sulphide selenide 196
of indium arsenide 125 of zinc selenide 196
of indium gallium arsenide 51 by metalorganic molecular beam epitaxy
of indium phosphide 84, 409 — of aluminum gallium arsenide 291
- of silicon germanium 40 - of aluminum gallium phosphide 248
Surface structure - of gallium antimonide 117
— of gallium nitride 149 — of gallium arsenide 58, 291, 296, 396
— of gallium nitride phosphide 180 - of gallium indium arsenide phosphide 16, 314, 321, 362,
— of indium arsenide 125 389, 402, 449
of gallium indium phosphide 34, 339
Thin film growth, epitaxy of gallium nitride phosphide 180
— by atomic layer epitaxy of gallium phosphide 34, 314, 321, 420
-— — of gallium arsenide 28 of indium arsenide 334
by chemical beam epitaxy of indium arsenide phosphide 434
— of aluminum antimonide 491 of indium phosphide 339, 362, 389, 402, 409, 425
of aluminum arsenide 454 of zinc cadmium selenide 196
of aluminum nitride 143 of zinc cadmium sulphide selenide 196
of diamond 208 - of zinc selenide 196
of gallium aluminum arsenide |, 371, 485 — theory of selective growth 302
of gallium antimonide 491 by molecular beam epitaxy
— of gallium arsenide 1, 22, 51, 66, 71, 112, 125, 271, 356, - of gallium arsenide 88, 185
371, 383, 485 of gallium arsenide nitride 175
— of gallium nitride 143 of gallium arsenide phosphide 92
- of gallium phosphide 112, 271 of gallium indium arsenide 276
~ of indium arsenide 66, 125, 345 of gallium indium phosphide 276
— of indium gallium arsenide 51, 122, 263, 327, 356, 371, of gallium nitride 149, 167, 175, 185
415, 442, 454, 470, 476, 485 of gallium phosphide 92
— of indium gallium arsenide phosphide 122 of silicon 235
- of indium gallium phosphide |, 470 theory of facet formation 235
— of indium nitride 143 by solid source molecular beam epitaxy
— of indium phosphide 66, 104, 112, 263, 271, 308, 327, 430, — of dysprosium phosphide 285
442, 454, 465, 470, 476 by vapor phase epitaxy
- of zinc selenide 190 — through metalorganic chemical vapor deposition
- of zine sulphide 202 — — of gallium arsenide 396
by gas source molecular beam epitaxy Transistors, see Device characterization
- of aluminum nitride 132, 154, 159
of dysprosium phosphide 285
Wave guides, see Device characterization
of gallium aluminum nitride 154
of gallium arsenide 77
of gallium arsenide phosphide 77 Zinc
of gallium indium arsenide 281, 460 — cadmium selenide 196
of gallium nitride 154, 159 — magnesium sulphide 196
of gallium phosphide 256 — selenide selenide 190, 196
of indium aluminum arsenide 460 — sulphide 202