Journal of Crystal Growth 1995: Vol 155 Index

5 Pages·1995·0.81 MB·English

Author index 287
Kuppurao, S., S. Brandon and J.J. Derby, Miyamoto, N., see Mazumder 155 (1995) 183
Modeling the vertical Bridgman growth Mori, T., see Nakao 155 (1995) 179
of cadmium zinc telluride. Il. Transient Muto, S., see Nakao 155 (1995) 179
analysis of zinc segregation 155 (1995) 103
Nakanishi, H. and H. Kohda, Liquid encap-
acklison, D.E., see Hooper 155 (1995) 157 sulated, vertical Bridgman growth of
ambropoulos, J.C., see Wu 155 (1995) 38
GaAs crystal with uniform EL2 concen-
angen, Y.H.M., see Jansens 155 (1995) 126
tration 155 (19951)7 1
anglais, F., see Loumagne 155 (1995) 198 Nakao, H., T. Mori, S. Muto and N
Langlais, F., see Loumagne 155 (19952)0 5
Yokoyama, MBE growth of lattice-
LaPierre, R.R., T. Okada, BJ. Robinson,
matched metal /semiconductor structures 155 (1995) 179
D.A. Thompson and G.C. Weatherly,
Naslain, R., see Loumagne 155 (1995) 198
Spinodal-like decomposition of In
Naslain, R., see Loumagne 155 (1995) 205
GaAsP /(100) InP grown by gas source
molecular beam epitaxy 155 (1995) Ogawa, H., Q. Guo and K. Ohta, Low tem-
Lee, C.L., see Jeong 155 (1995) perature liquid phase epitaxy of silicon
Lee, H., see Jeong 155 (1995) from gallium solution 155 (1995) 193
Lee, Tsuen-Lin, Jin-Shung Liu and Hao- Ohnishi, H., see Kadotsuji 155 (1995) 23
Hsiung Lin, The incorporation behavior Ohta, K., see Ogawa 155 (1995) 193
of As and P in GalnAsP (A = 1.3 wm) on Okada, T., see LaPierre 155 (1995) 1
InP grown by gas source molecular beam Orton, J.W., see Hooper 155 (1995) 157
epitaxy 155 (1995)
Lin, Hao-Hsiung, see Lee 155 (1995) Popov, V.K., see Louchev 155 (1995) 276
Liu, Jin-Shung, see Lee 155 (1995) Prasad, V., see Zhang 155 (1995) 47
Louchev, O.A., V.K Popov and E.N Prywer, J., Three-dimensional model of faces
Antonov, The morphological stability in disappearance in crystal habit 155 (1995) 254
supercritical fluid chemical deposition of
films near the critical point 155 (1995) 276 Rakin, V.I., The shape of a growing crystal
Loumagne, F., F. Langlais and R. Naslain, a numerical study 155 (1995) 260
Experimental kinetic study of the chemi Robinson, B.J., see LaPierre 155 (1995) 1
cal vapour deposition of SiC-based ce Rodfiguez-Viejo, J., J.S toemenos, N. Clava
ramics from CH,SiCl,/H, gas precursor 155 (1995) 198 guera and M.T. Clavaguera-Mora,
Loumagne, F., F. Langlais and R. Naslain, Growth morphology of low-pressure
Reactional mechanisms of the chemical metal organic chemical vapor deposition
vapour deposition of SiC-based ceramics silicon carbide on a-SiO0,/Si(100) sub-
from CH,SiCl,/H, gas precursor 155 (19952)0 5 strates 155 (19952)1 4
Lu, H.B., C.L. Ma, H. Cui, L.F. Zhou, R.Z Rousseau, R.W., see Griscik 155 (1995) 112
Wang and F.Z. Cui, Controlled crystal-
lization of calcium phosphate under Sangwal, K., S. Veintemillas-Verdaguer and
stearic acid monoloayers 155 (19951)2 0 J. Torrent-Burgués, Growth habit and
Luo, C.-P., M.-K. Chin, Z. Yuan, Z.Y. Xu, surface morphology of L-arginine phos-
X.P. Yang and P.H. Zhang, Growth in- phate monohydrate single crystals 155 (19951)3 5
terruption induced interface microrough- Seki, H., see Takahashi 155 (1995) 27
ness in single quantum wells 155 (19952)7 2 Shi, Tiansheng, see Zhang 155 (1995) 66
Shimamura, K., see Uda 155 (19952)2 9
Ma, C.L., see Lu 155 (19951)2 0 Shin, H.K., see Jeong 155 (1995) 32
Malollari, I.Xh., P.G. Klepetsanis and P.G Shin, Y.J., see Jeong 155 (1995) 32
Koutsoukos, Precipitation of strontium Stacy, A.M., see Tejedor 155 (19952)2 3
sulfate in aqueous solutions at 25°C 155 (19952)4 0 Stoemenos, J., see Rodfiguez-Viejo 155 (19952)1 4
Mashiko, Y., see Mazumder 155 (19951)8 3 Strom, C.S., L.P.J. Vogels and M.A. Verhei-
Mashita, M., H. Ishikawa and T. Izumiya, jen, Comprehensive computerized survey
Comparative study on carbon incorpora- of the slice configurations of NH,H ,PO,
tion in MOCVD AIGaAs layers between (ADP) type structures 155 (1995) 144
arsine and tertiarybutylarsine 155 (19951)6 4 Sukegawa, T., see Kadotsuji 155 (1995) 23
Mazumder, M.K., Y. Mashiko, M.H.
Koyama, Y. Takakuwa and N. Miyamoto, Takahashi, N., H. Ikeda, A. Koukitu and
Generation kinetics of pyramidal hillock H. Seki, Vapor-—solid distribution in
and crystallographic defect on Si(1 11) vic- In,_,Ga,As and In,_,Ga,P alloys
inal surfaces grown with SiH ,Cl, 155 (1995) 183 grown by atomic layer epitaxy 155 (1995) 27
288 Author index
Takakuwa, Y., see Mazumder 155 (1995) 183 Watanabe, M., see Kojima l 55 (1995) 70
Tanaka, A.., see Kadotsuji 155 (1995) 23 Weatherly, G.C., see LaPierre 155 (1995) l
Tanaka, I., see Kojima 155 (1995) 70 Wu, Chien-Hsing and J.C Lambropoulos,
Teja, A.S., see Griscik 155 (1995) 112 Thermoelastic analysis of dislocation
Tejedor, P., F.J. Hollander, J Fayos and generation during edge-defined film-fed
A.M. Stacy, Synthesis, crystal structure growth of polygonal shells 155 (1995)
and optical properties of a novel zinc
samarium phosphide (Zn,SmP,) 155 (1995) 223
Thompson, D.A., see LaPierre 155(1995) 1 Xu, Z.Y., see Luo 155 (1995) 272
Torrent-Burgués, J., see Sangwal 155 (19951)3 5
Uda, S., K. Shimamura and T. Fukuda, In- Yang, X.P., see Luo 155 (1995) 272
strinsic LiNbO, melt species partitioning Yokoyama, N., see Nakao 155 (1995) 179
at the congruent melt composition. III Yu, P.Y., see Jeong 155 (1995) 32
Choice of the growth-parameters for the Yuan, Z., see Luo 155 (1995) 979
dynamic congruent-state growth 155 (1995) 229
Van den Berg, E.P.G., see Jansens 155 (1995) 126 Zhang, H. and V. Prasad, A multizone adap
Veintemillas-Verdaguer, S., see Sangwal 155 (1995) 135 tive process model for low and high pres
Verbrugge, M.W., D.W. Glander and D.R sure crystal growth 155 (1995)
Baker, Reaction distribution over a nod Zhang, P.H., see Luo 155 (1995)
ule in a thin-film battery 155 (1995) 8] Zhang, Xikang, see Zhang 155 (1995)
Verheijen, M.A., see Strom 155 (1995) 144 Zhang, Xuanxiong, Tiansheng Shi Jianxin
Vogels, L.P.J., see Strom 155 (1995) 144 Wang and Xikang Zhang, Oriented
growth of a diamond film on Si(100) by
Wang, Jianxin, see Zhang 155 (1995) 66 hot filament chemical vapor deposition 155 (1995)
Wang, R.Z., see Lu 155 (1995) 120 Zhou, L.F., see Lu 155 (1995)
ELSEVIER Journal of Crystal Growth 155 (1995) 289-290
index
Aluminum Heat flow control
gallium arsenide 164 in lithium niobate 229
Apparatus of convection 93, 103
for thin film growth Hydrodynamics, see Convection
by molecular beam epitaxy with radio frequency acti
vated nitrogen 157 Indium
for miscellaneous purposes gallium arsenide 27
supercritical fluid chemical deposition 276 gallium arsenide phosphide
wheat gamma-gliadin 247 gallium phosphide 27
phosphide 47
Biological mineralization
of calcium phosphate 120 Kinetics
of growth 1, 16, 27 32 126, 135, 164, 183, 193, 198, 205,
576
Cadmium 229, 240, 254, 260, Zit
sulphide 32 of interface control 120 229
zinc telluride 93, 103 of nucleation 120, 188 3
Computer simulation
of convection 47, 93, 103 Melt growth technique
of crystal growth 254 by Bridgman—Stockbarger method
of crystalline structure 260 of gallium arsenide 171
of heat flow 93, 103 of zinc cadmium telluride 93, 103
of zinc segregation 103 by Czochralski method
theory of Hartman—Perdok of indium phosphide 47
of ADP 144 of silicon 47
Convection 47, 93 by edge defined film fed growth
Crystal structures, novel of silicon 38
- of zinc samarium phosphide 223 by floating zone method
of strontium barium titanate 70
Defects by fractional suspension
EL2 in gallium arsenide 171 of e-caprolactam 126
theory of formation in silicon 38 Microgravity, growth under
Dendritic growth of wheat gamma-gliadin 247
- of lithium 81 Morphological stability
Device characterization of crystal shape 260
electronic materials 214 of supercritical fluid chemical deposition 276
Electronic materials, see Device characterization Nucleation
Epitaxy, see Thin film growth of calcium phosphate 120
Etching Numbers
chemical 135, 183 Grashof 47, 93
Rayleigh 93, 276
Gallium Shape factor 260
- aluminum arsenide 272
- arsenide 272 Phase diagram
- nitride 157 of e-caprolactam 126
290 Subject index
- of lithium niobate 229 Thin film growth, epitaxy
of silicon carbide 198 — by atomic layer epitaxy
of strontium barium titanate 70 - — of indium gallium arsenide 22 7
Precursor — — of indium gallium phosphide 27
for silicon carbide 198, 205 — by gas source molecular beam epitaxy
- of indium gallium phosphide 1, 16
Silicon 38, 193 — theory of 16
carbide 198, 214 — by liquid phase epitaxy
Solution growth technique — of silicon from gallium melt 193
— by electrodeposition by molecular beam epitaxy
— of lithium 81 — of gallium aluminum arsenide 272
by hydrothermal growth — of gallium arsenide 272
— — of quartz 75 — of gallium nitride 157
- by low temperature method - — of nickel indium aluminum 179
of K-alum 260 by vapor phase epitaxy
of L-arginine phosphate monohydrate 135 - — through chemical vapor deposition
— of strontium sulphate 240 - of diamond 66
— theory of faces disappearance in crystal habit 254 of silicon 183
Superlattices, multilayers — through evaporation and condensation
- of III-V compounds 1, 16 - — — of zinc selenide 23
Surface energy, determination ~ through metalorganic chemical vapor deposition
of silicon carbide 205 of aluminum gallium arsenide 164
Surface morphology of tungsten hexacarbonyl 266
of e-caprolactam 126 Tungsten
of quartz 75 hexacarbonyl 266
Surface structure
of diamond 66
of L-arginine phosphate monohydrate 135