Journal of Crystal Growth 1995: Vol 154 Index

7 Pages·1995·1.7 MB·English

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JOURNAL OF CRYSTAL
GROWTH
ELSEVIER Journal of Crystal Growth 154 (1995) 422-425
Author index
Aindow, M., see Cheng 154 (1995) 251 Chen, Jyh-Shinn, see Yang 154 (1995) 34
Anders, M.J., M.M.G. Bongers, P.L. Bastos Chen, Nuofu, see Liu 154 (1995) 19
and L.J. Géiling, Position dependent Cheng, T.T., M. Aindow, I.P. Jones, J.E.
growth rate and composition of low pres- Hails and D.J. Williams, The role of the
sure organometallic vapour phase epitaxy initial nucleation stage in microstructural
grown InGaP and AlGaAs on GaAs in- development for CdTe grown on heat-
verted mesa grooves 154 (1995) 240 cleaned 2°-off (001)GaAs by metalor-
Anselmo, A.P., see Jafri 154 (1995) 280 ganic chemical vapour deposition 154 (1995) 251
Anzai, H., J.M. Delrieu, S. Takasaki, S. Cherns, D., see Atici 154 (1995) 262
Nakatsuji and J. Yamada, Crystal growth Chiang, Cheng-Der, see Yang 154 (1995) 34
of organic charge-transfer complexes by Chin, G.-H., see Chen 154 (1995) 98
electrocrystallization with controlled ap- Coriell, S.R., see Sekerka 154 (1995) 370
plied current 154 (1995) 145
Ataka, M., see Niimura 154 (1995) 136 Danielson, E.D., see Bell 154 (1995) 108
Atici, Y. and D. Cherns, Transmission elec- Daweritz, L., see Hey 154(1995) 1
tron microscope study of surface steps on Delrieu, J.M., see Anzai 154 (1995) 145
SiGe /Si(001) superlattices produced by DeSisto, W.J., E.S. Snow and C.L. Vold,
differential etching 154 (1995) 262 Metalorganic chemical vapor deposition
of YBCO thin films on (100) MgO 154 (1995) 68
Bahr, G., see Helmers 154 (1995) 60
Dhanaraj, G., see Venkataramanan 154 (1995) 92
Bangert, U., B. Tang and M. Missous, Ther-
Drenth, J., see Haas 154 (1995) 126
mal behaviour of aluminium films grown
Ducke, E., see Fissel 154 (1995) 72
by molecular beam epitaxy on GaAs 154 (1995) 223
Dutta, P.S., H.L. Bhat and V. Kumar, Nu-
Bastos, P.L., see Anders 154 (1995) 240
merical analysis of melt—solid interface
Behrend, J., see Hey 154(1995) 1
shapes and growth rates of gallium anti-
Bell, S.J., K.L. Jennings, E.D. Danielson,
monide in a single-zone vertical Bridg-
E.I. Solomon and R.L. Musselman, Sin-
man furnace 154 (1995) 213
gle crystal morphology of the copper ac-
etate dimers Cu,(CH,COO), -2H,O and
Ebbinghaus, G., see Strzoda 154 (1995) 27
Cu(CH ;COO),P Z 154 (19951)0 8
Eddrief, M., see Koébel 154 (1995) 269
Benz, K.W., see Hornung 154 (19953)1 5
Emeis, N., see Strzoda 154 (1995) 27
Bhat, H.L., see Venkataramanan 154 (1995) 92
Endoh, Y., J. Tanimura, M. Imaizumi, M.
Bhat, H.L., see Dutta 154 (19952)1 3
Suita, K. Ohtsuka, T. Isu and M.
Bjorketun, L.-O., see Kordina 154 (19953)0 3
Nunoshita, Crystalline defects in ZnSe
Blakers, A.W., see Weber 154 (1995) 54
layers grown by gas source molecular
Bongers, M.M.G., see Anders 154 (19952)4 0
beam epitaxy 154 (1995) 41
Bottomley, D.J., P. Fons and D.J. Tweet,
Determination of the lattice constants of
epitaxial layers 154 (1995) 401 Fissel, A., U. Kaiser, E. Ducke, B. Schroter
Bridenbaugh, P.M., see Laudise 154 (1995) 211 and W. Richter, Epitaxial growth of SiC
thin films on Si-stabilized a-SiC(0001) at
Brown, R.A., see Xia 154 (1995) 205
low temperatures by solid-source molecu-
Chen, F., see Lee 154 (1995) 351 lar beam epitaxy 154 (1995) 72
Chen, J.-C. and G.-H. Chin, Linear stability Fleming, R.M., see Laudise 154 (1995) 211
analysis of thermocapillary convection in Fons, P., see Bottomley 154 (1995) 401
the floating zone 154 (1995) 98 Fukuda, T., see Koh 154 (1995) 151
Author index 423
Fukuda, T., see Yonenaga 154 (1995) 275 Jennings, K.L., see Bell 154 (19951)0 8
Furuya, H., see Harada 154 (1995) 47 Jones, I.P., see Cheng 154 (19952)5 1
Jones, S.H. and L. Seidel Salinas, General-
Giling, L.J., see Anders 154 (1995) 240 ized simulator for vapor phase epitaxy on
Glass, R.C., see Kordina 154 (1995) 303 patterned substrates 154 (19951)6 3
Glicksman, M.E., see Murray 154 (1995) 386
Greedan, J.E., see Nakua 154 (1995) 334 Kaiser, U., see Fissel 154 (1995) 72
Gupta, K.P., see Jafri 154 (1995) 280 Kameyama, T., see Onuma 154 (19951)1 8
Kanda, H., see Singhal 154 (19952)9 7
Haas, C. and J. Drenth, The interaction en- Katsura, T., see Niimura 154 (1995) 136
ergy between two protein molecules re- Katz, H.E., see Laudise 154 (1995) 211
lated to physical properties of their solu- Kawakami, S., T. Yamada, S. Sakakibara
tion and their crystals and implications and H. Tabata, Preparation of spinel
for crystal growth 154 (1995) 126 fibers by directional solidification of
Hahn, Seung-Ho, see Park 154 (1995) 10 MgAl,0O,—Mg,SiO, eutectic 154 (1995) 193
Hails, J.E., see Cheng 154 (1995) 251 Kaysser, W.A., see Helmers 154 (1995) 60
Hallin, C., see Kordina 154 (1995) 303 Kitagawa, M., see Lee 154 (1995) 339
Harada, K., H. Tanaka, J. Matsubara, Y. Kjebon, O., see Lourdudoss 154 (1995) 410
Shimanuki and H. Furuya, Origins of Kobayashi, H., see Lee 154 (1995) 339
metal impurities in single-crystal Czoch- Koébel, A., Y. Zheng, J.F. Pétroff, M. Ed-
ralski silicon 154 (1995) 47 drief, Le Thanh Vinh and C. Sébenne, A
Hasegawa, M., see Zhao 154 (1995) 322 transmission electron microscopy struc-
Hashimoto, S. and A. Yamaguchi, Growth of tural analysis of GaSe thin films grown
MgCr,O, whiskers 154 (1995) 329 on Si({111) substrates 154 (1995) 269
Heime, K., see Schmidt 154 (1995) 189 Koh, H.J., P. Rudolph and T. Fukuda,
Helmers, L., J. Schilz, G. Bahr and W.A. Growth of Bi,_,Sb, mixed crystals by a
Kaysser, Magrosegregation during Bridg- new melt injection technique 154 (1995) 151
man growth of Ge,_,Si, mixed crystals 154 (1995) 60 Kordina, O., L.-O. Bjérketun, A. Henry, C.
Henry, A., see Kordina 154 (1995) 303 Hallin, R.C. Glass, L. Hultman, J.-E.
Hey, R., M. Wassermeier, J. Behrend, L. Sungren and E. Janzén, Growth of 3C-
Daweritz, K. Ploog and H. Raidt, Mor- SiC on on-axis Si({100) substrates by
phological instabilities on exactly ori- chemical vapor deposition 154 (1995) 303
ented and on vicinal GaAs (001) surfaces Kumar, V., see Dutta 154 (1995) 213
during molecular beam epitaxy 154(1995) 1
He Youping, Su Genbo, Wu Bochang and Landgren, G., see Lourdudoss 154 (1995) 410
Jang Rihong, New organic nonlinear op- Lee, S.T., M. Kitagawa, R. Suzukawa, K.
tical crystals of 1-(3-thienyl)-3-(4-bromo- Ichino and H. Kobayashi, Preparation
phenyl)-propene-1-one 154 (1995) 415 and characterization of Zn ,Sr,_,S com-
Holz, R., see Lourdudoss 154 (1995) 410 pound thin films 154 (1995) 339
Hornung, M., K.W. Benz, L. Margulis, D. Laudise, R.A., P.M. Bridenbaugh, T. Siegrist,
Schmid and H.W. Schock, Growth of bulk R.M. Fleming, H.E. Katz and A.J.
Cuo.gsIn;95Se2 and characterization on a Lovinger, Addendum to “Growth of a-
micro scale 154 (1995) 315 hexathienyl by a micro melt technique” 154 (1995) 211
Hultman, L., see Kordina 154 (1995) 303 Lee, Y.C. and F. Chen, Volume change ef-
fect on the salt-finger stability of direc-
Ichino, K., see Lee 154 (1995) 339 tionally solidifying ammonium chloride
Imaizumi, M., see Endoh 154 (1995) 41 solution 154 (1995) 351
Ishizawa, Y., see Otani 154 (1995) 81 Li, G., M. Linnarsson and C. Jagadish, Zn
Ishizawa, Y., see Otani 154 (1995) 202 5-doped GaAs grown by metalorganic
Isu, T., see Endoh 154 (1995) 41 vapour phase epitaxy 154 (1995) 231
Ito, A., see Onuma 154 (1995) 118 Linnarsson, M., see Li 154 (1995) 231
Liu, Wenjie and Nuofu Chen, Decrease of
Jafri, I.H., V. Prasad, A.P. Anselmo and dislocations in GaAs by isoelectronic
K.P. Gupta, Role of crucible partition in doping of liquid phase epitaxial layers 154 (1995) 19
improving Czochralski melt conditions 154 (1995) 280 Lourdudoss, S., R. Holz, O. Kjebon and G.
Jagadish, C., see Li 154 (1995) 231 Landgren, Iron doped GalnP for selec-
Jang Rihong, see He Youping 154 (19954)1 5 tive regrowth around GaAs mesas 154 (19954)1 0
Janzén, E., see Kordina 154 (1995) 303 Lovinger, A.J., see Laudise 154 (19952)1 1
424
Author index
Margulis, L., see Hornung 154 (19953)1 5 Sasaki, T., see Mori 154 (1995) 23
Matsubara, J., see Harada 154 (1995) 47 Sato, M., see Shamoto 154 (1995) 197
Matsui, A., see Yonenaga 154 (19952)7 5 Satunkin, G.A., Mathematical modelling and
McFadden, G.B., see Sekerka 154 (19953)7 0 control system design of Czochralski and
Min, Suk-Ki, see Park 154 (1995) 10 liquid encapsulated Czochralski pro-
Minezaki, Y., see Niimura 154 (19951)3 6 cesses: the basic low order mathematical
Missous, M., see Bangert 154 (19952)2 3 model 154 (1995) 172
Mori, H., M. Tachikawa, T. Yamada and T. Scherg, T., see Strzoda 154 (1995) 27
Sasaki, Surface of GaAs/Si observed by Schilz, J., see Helmers 154 (1995) 60
atomic force microscopy 154 (1995) 23 Schmid, D., see Hornung 154 (1995) 315
Murray, B.T., A.A. Wheeler and M.E. Schmidt, G., R. Tuzinski and K. Heime,
Glicksman, Simulations of experimentally Selective growth of SiGe structures in the
observed dendritic growth behavior using sub 100 nm range using low pressure
a phase-field model 154 (1995) 386 vapor phase epitaxy 154 (1995) 189
Musselman, R.L., see Bell 154 (1995) 108 Schock, H.W., see Hornung 154 (1995) 315
Schroter, B., see Fissel 154 (1995) 72
Nagasawa, H., see Shimizu 154 (1995) 113 Sébenne, C., see Koébel 154 (1995) 269
Nakatsuji, S., see Anzai 154 (1995) 145 Seidel Salinas, L., see Jones 154 (1995) 163
Nakua, A.M. and J.E. Greedan, Single crys- Sekerka, R.F., S.R. Coriell and G.B. McFad-
tal growth of transition metal anti- den, Stagnant film model of the effect of
monates AB,O, from V,0;-B,O, fluxes 154 (1995) 334 natural convection on the dendrite oper-
Naumann, R.J., Marangoni convection ating state 154 (1995) 370
around voids in Bridgman growth 154 (1995) 156 Sekerka, R.F., Optimum stability conjecture
Niimura, N., Y. Minezaki, M. Ataka and T. for the role of interface kinetics in selec-
Katsura, Aggregation in supersaturated tion of the dendrite operating state 154 (1995) 377
lysozyme solution studied by time-re- Shamoto, S., S. Tanaka, E. Ueda and M.
solved small angle neutron scattering 154 (1995) 136 Sato, Single crystal growth of BaNiS, 154 (1995) 197
Nunoshita, M., see Endoh 154 (1995) 41 Sherwood, J.N., see Venkataramanan 154 (1995) 92
Shimanuki, Y., see Harada 154 (1995) 47
Ohtsuka, K., see Endoh 154 (1995) 41 Shimizu, K., H. Nagasawa and K. Takahasi,
Onuma, K., A. Ito, T. Tateishi and T. Effect of off-bottom clearance of a tur-
Kameyama, Growth kinetics of hydroxya- bine type impeller on crystal size distri-
patite crystal revealed by atomic force bution of aluminum potassium sulfate in
microscopy 154 (1995) 118 a batch crystallizer 154 (1995) 113
Otani, S. and Y. Ishizawa, Preparation of Shlyk, L., J. Stepien-Damm and T. Troé,
WB,_ , single crystals by the floating zone Single crystal growth of some uranium
method 154 (1995) 81 tellurides 154 (1995) 418
Otani, S. and Y. Ishizawa, Preparation of Siegrist, T., see Laudise 154 (1995) 211
Mo.C single crystals by the floating zone Singhal, S.K. and H. Kanda, Temperature
method 154 (1995) 202 dependence of growth of diamond from a
Cu-C system under high pressure 154 (1995) 297
Park, Young Ju, Suk-Ki Min, Seung-Ho Snow, E.S., see DeSisto 154 (1995) 68
Hahn and Jong-Kyu Yoon, Application Solomon, E.I., see Bell 154 (1995) 108
of an axial magnetic field to vertical gra- Stepien-Damm, J., see Shlyk 154 (1995) 418
dient freeze GaAs single crystal growth 154 (1995) 10 Strzoda, R., G. Ebbinghaus, T. Scherg and
Pétroff, J.F., see Koébel 154 (1995) 269 N. Emeis, Studies of the butt-coupling of
Ploog, K., see Hey 154(1995) 1 InGaAsP-waveguides realized with selec-
Prasad, V., see Jafri 154 (1995) 280 tive area metalorganic vapour phase epi-
taxy 154 (1995) 27
Raidt, H., see Hey 154(1995) 1 Su Genbo, see He Youping 154 (19954)1 5
Richter, W., see Fissel 154 (1995) 72 Suita, M., see Endoh 154 (1995) 41
Rudolph, P., see Koh 154 (19951)5 1 Sumino, K., see Yonenaga 154 (19952)7 5
Sungren, J.-E., see Kordina 154 (19953)0 3
Sakakibara, S., see Kawakami 154 (1995) 193 Suzukawa, R., see Lee 154 (19953)3 9
Sangwal, K., S. Veintemillas-Verdaguer and
J. Torrent-Burgués, On the formation of Tabata, H., see Kawakami 154 (1995) 193
dislocation etch pits on L-arginine phos- Tachikawa, M., see Mori 154 (1995) 23
phate monohydrate single crystals 154 (1995) 364 Takahasi, K., see Shimizu 154 (1995) 113
Author index 425
Takasaki, S., see Anzai 154 (19951)4 5 Williams, D.J., see Cheng 154 (19952)5 1
Takei, H., see Zhao 154 (19953)2 2 Wu, Tai-Bor, see Yang 154 (1995) 34
Tamura, M., see Yodo 154 (1995) 85 Wu Bochang, see He Youping 154 (19954)1 5
Tanaka, H., see Harada 154 (1995) 47 Wu, Hong, see Zhang 154 (19952)9 3
Tanaka, S., see Shamoto 154 (19951)9 7
Tang, B., see Bangert 154 (19952)2 3 Xia, Y. and R.A. Brown, Measurement of
Tanimura, J., see Endoh 154 (1995) 41 the onset of two-dimensional cellular so-
Tateishi, T., see Onuma 154 (19951)1 8 lidification in the succinonitrile—acetone
Torrent-Burgués, J., see Sangwal 154 (19953)6 4 binary alloy 154 (1995) 205
Tozawa, S., see Yonenaga 154 (19952)7 5
Troé, T., see Shlyk 154 (19954)1 8 Yamada, J., see Anzai 154 (1995) 145
Tuzinski, R., see Schmidt 154 (19951)8 9 Yamada, T., see Mori 154 (1995) 23
Tweet, D.J., see Bottomley 154 (19954)0 1 Yamada, T., see Kawakami 154 (1995) 193
Yamaguchi, A., see Hashimoto 154 (1995) 329
Ueda, E., see Shamoto 154 (1995) 197 Yang, Tian-Juh, Jyh-Shinn Chen, Cheng-Der
Chiang and Tai-Bor Wu, Donor-doping
Veintemillas-Verdaguer, S., see Sangwal 154 (1995) 364 effect in the growth of Hg,_,Cd,Te het-
Venkataramanan, V., G. Dhanaraj, V.K. erolayers by slider liquid phase epitaxy 154 (1995) 34
Wadhawan, J.N. Sherwood and H.L. Yodo, T. and M. Tamura, Initial growth of
Bhat, Crystal growth and defects charac- GaAs on Si(111) substrates by molecular
terization of zinc tris (thiourea) sulfate: a beam epitaxy 154 (1995) 85
novel metalorganic nonlinear optical Yonenaga, I., A. Matsui, S. Tozawa, K. Sum-
crystal 154 (1995) 92 ino and T. Fukuda, Czochralski growth
Vinh, Le Thanh, see Koébel 154 (1995) 269 of Ge,_,Si, alloy crystals 154 (1995) 275
Vold, C.L., see DeSisto 154 (1995) 68 Yoon, Jong-Kyu, see Park 154 (1995) 10
Wadhawan, V.K., see Venkataramanan 154 (1995) 92 Zhang, Hong, Geya Wang and Hong Wu,
Wang, Geya, see Zhang 154 (1995) 293 Study on SmBa,Cu,O,, whisker-like crys-
Wassermeier, M., see Hey 154(1995) 1 tals and their morphology 154 (19952)9 3
Weber, K.J. and A.W. Blakers, Liquid phase Zhao, T.-r.. M. Hasegawa and H. Takei,
epitaxy of silicon on multicrystalline sili- Growth and characterization of CuFeO,
con substrates 154 (1995) 54 single crystals 154 (1995) 322
Wheeler, A.A., see Murray 154 (1995) 386 Zheng, Y., see Koébel 154 (1995) 269
jounmnor CRYSTAL
GROWTH
ELSEVIER Journal of Crystal Growth 154 (1995) 426-427
Subject index
Aluminum 223 — of boundary layer in germanium silicon 60
Apparatus — of Marangoni flow 156
— for in situ atomic force microscopy observation of growth — of surface growth 240
118
for melt growth Epitaxy, see Thin film growth
— by axial magnetic field with vertical gradient freeze Etching
— — of gallium arsenide 10 — chemical 92, 189
for mixed crystal growth — — of L-arginine phosphate (LAP) 369
— — of bismuth antimonide 151
Gallium
Barium — aluminum arsenide 240
— nickel sulphide 197 antimonide 213
arsenide 1, 10, 23, 85, 231
Cadmium
indium phosphide 410
— telluride 251 selenide 269
Cellular growth
Germanium
— of succinonitrite 205
— silicon 60, 275
Characterization
— by atomic force microscopy Heat flow control, of
— — of gallium arsenide on silicone 23 — dendritic growth 377
— — of stepped surfaces 1, 68 Hydrodynamics, see Convection
— by in situ atomic force microscopy
— — of solution grown hydroxyapatite 118 Indium
Computer simulation — gallium arsenide 19
— of convection 351 — gallium arsenide phosphide 27
— of dendritic growth 386 — gallium phosphide 249
— of heat flow 10, 280
— of interface shape 172, 213 Kinetics
— of vapor phase epitaxy on patterned substrates 163 of growth 60, 92, 118, 136, 240, 339, 351, 377
Convection 60, 156, 280, 351, 370 of interface control 213
Copper of nucleation 113, 118
— acetate hydrate 108 of recrystallisation 223
— acetate pyrazine 108
ferrite 322 Lysozyme 136
indium selenide 315
Melt growth technique
Defects — by Bridgman-—Stockbarger method
— decrease in isoelectronically doped films 19 — — of copper indium selenide 315
Dendritic growth — — of gallium antimonide 213
— of pure materials 386 — — of germanium silicone 60
— theory of 377 — — of uranium telluride 418
— theory of natural convection 370 — — theory of Marangoni convection 156
Device characterization — by Czochralski method
— wave guides of indium gallium arsenide phosphide 27 — of silicon 47, 280
Diamond 297 — of silicon germanium 275
Diffusional control — theory of interface shape 172
Subject index
by floating zone method — — of zinc tris sulphate 92
of cuprous ferrite 322 — theory of convection 351
of molybdenum carbide 202 Stefan problem or moving boundary problem
of tungsten boride 81 — of dendrite 377, 386
theory of 98 — of vapor grown gallium arsenide 163
by modified Stepaneve method Superconductivity materials, high 7.
— of bismuth antimonide 151 — film
by traveling heater method - - of YBCO 68
— of spinel fibers 193 Superlattices, multilayers
by vertical gradient freeze — of silicon germanium 262
— of gallium arsenide 10 Surface structure
Mercury — of epitaxy 163
— cadmium telluride 34 — of gallium arsenide on silicon 23
Microgravity, growth under — of stepped surfaces 1
— of pure materials 386
— theory of Marangoni convection 156 Thin film growth, epitaxy
— theory of natural convection 370 by all techniques
— theory of lattice constants 401
Morphological stability
— of directional solidification 205 by gas source molecular beam epitaxy
— of singular gallium arsenide (001) 1 — of zinc selenide 41
by liquid phase epitaxy
Nonlinear optics, crystals for — of indium gallium arsenide 19
— 1-(3-thienyl)-3-(4-bromophenyl)-propene-l-one 415 — of mercury cadmium telluride 34
— zinc tris sulphate 92 — of silicon 54
Nucleation by molecular beam epitaxy
— of aluminum potassium sulphate 113 of gallium arsenide 1, 85
— of cadmium telluride 251 of gallium selenide 269
— of diamond 297 of silicon carbide 72
Numbers — theory of 140
Grashof 60, 156, 280 by vapor phase epitaxy
Marangoni 156 through chemical vapor deposition
Peclet 377 — of 3C-silicon carbide 303
Prandtl 280 — of silicon germanium 189
Rayleigh 60, 280 — theory of growth on patterned substrates 163
through evaporation and condensation
Phase diagram
— of gallium indium phosphide 410
— of barium nickel sulphide 197
— of zinc strontium sulphide 339
— of zinc strontium sulphide 339
through metalorganic chemical vapor deposition
Proteins
of aluminum gallium arsenide 240
— basic interaction energies 126
of cadmium telluride 251
of gallium arsenide 23, 231
Silicon 47, 54
of indium gallium arsenide phosphide 27
— carbide 72, 303
of yttrium barium cuprates 68
— germanium 189, 262
Tungsten
Solid growth technique
— boride 81
— by recrystallization
— — of uranium telluride 418
Vapor growth technique
Solution growth technique
by chemical transport
— by electrocrystallization
— of gallium indium phosphide 410
— — of organic charge transfer complexes 145
— of uranium telluride 418
by evaporation
— by evaporation and condensation
— of 1-(3-thienyl)-3-(4-bromophenyl)-propene-l-one 415
— of picrochromite 329
by flux method
— of barium nickel sulphide 197 Whisker growth
— of diamond 297 — of picrochromite 329
— of transition metal antimony oxides 334 — of samarium barium cuprate 293
by low temperature method
— — of hydroxyapatite 118 Zinc
— — of lysozyme 136 — selenide 41