Table Of Content

Author index Oishi, K., S. Kobayashi and F. Kaneko, Shetty, R. and W.R. Wilcox, Boron nitride Growth and characterization of CuGaS, coating on fused silica ampoules for thin films on (100) Si by vacuum deposi- semiconductor crystal growth 153 (1995) 97 tion with three sources 153 (1995) 158 Shetty, R., W.R. Wilcox and L.L. Regel, Olchowik, J.M., W. Sadowski and D. Szym- Influence of ampoule coatings on cad- czuk, Effect of interface energy on ero- mium telluride solidification 153 (1995) 103 sion of A™'BY substrates during liquid Shiojiri, M., see Saijo 153 (1995) 31 phase heteroepitaxy 153 (1995) 11 Smith, N.A., see Lane 153 (1995) 25 Oliver, P.E., see Lane 153 (1995) 25 Sreeramana Aithal, P. and P. Mohan Rao, Novel nonlinear optical crystal of methyl- Pan, Shoukui, Minmin Go and Mingin Chen, p-hydroxy benzoate 153 (1995) 60 Melt growth on MOMONS (3-methoxy- Sugiyama, K., see Miyake 153 (1995) 180 4-methoxy-4’-nitrostilbene) crystals 153 (1995) 55 Suzuki, T., Defect structure formed in Ponchet, A., A. Le Corre, A. Godefroy, S. LiNbO, crystals by reducing undoped Salaiin and A. Poudoulec, Influence of LiNbO, melts 153 (1995) 164 stress and surface reconstruction on the Szofran, F.R., see Rolin 153 (1995) 6 morphology of tensile GalnAs grown on Szymczuk, D., see Olchowik 153 (1995) 11 InP(001) by gas source molecular beam epitaxy 153 (1995) 71 Tabarrok, B., see Qin 153 (1995) 131 Poudoulec, A., see Ponchet 153 (1995) 71 Tilsley, M.E.G., see Lane 153 (1995) 25 Tokutaka, H., see Kishida 153 (1995) 146 Qin, Z., see Dost 153 (1995) 123 Tomzig, E., see Fischer 153 (1995) 90 Qin, Z., S. Dost, N. Djilali and B. Tabarrok, Tromby, M., see Ritchie 153 (1995) 68 A model for liquid phase electroepitaxy under an external magnetic field. II. Ap- Vidimari, F. , see Ritchie 153 (1995) 68 plication 153 (1995) 131 Regel, L.L., see Shetty 153 (1995) 103 Wang, C.A., see Krueger 153 (1995) 81 Ritchie, D.M., A. Di Paola, M. Tromby, M. Wang, G., H.G. Gallagher, T.P.J. Han and Dellagiovanni,M. Di Egidio and F. Vidi- B. Henderson, Crystal growth and optical characterisation of Cr*>*-doped mari, Erratum to “Silicon delta-doped YAI,(BO,), 153 (1995) 169 AlGaAs by low pressure metalorganic vapor phase epitaxy” 153 (1995) Watanabe, N., see Yoshida 153 (1995) 151 Rolin, T.D. and F.R. Szofran, Determina- Wen, J.G., see Yoshida 153 (1995) 151 tion of the electrical conductivity of liq- Wilcox, W.R., see Shetty 153 (1995) 97 uid Geo 9sSig.os 153 (1995) Wilcox, W.R., see Shetty 153 (1995) 103 Riifer, H., see Fischer 153 (1995) Wright, P.J., see Lane 153 (1995) 25 Sadowski, W., see Olchowik 153 (1995) Yamada, M., see Miyake 153 (1995) 180 Saenger, W., see Moré 153 (1995) Yoshida, Y., J.G. Wen, N. Watanabe, N. Saijo, H. and M. Shiojiri, J-aggregates of Koshizuka and T. Morishita, Preparation cyanine dye molecules adsorbed on the of YBa,Cu,O, thin films from precur- surfaces of AgBr emulsion crystals 153 (1995) sors deposited by hybrid plasma sputter- Salaiin, S., see Ponchet 153 (1995) ing through in situ annealing 153 (1995) 151 Sant, C. and J.P. Contour, Pulsed laser de- Yumoto, T., see Kishida 153 (1995) 146 position of Bi ,Cu, V2; _,,O;, thin films 153 (1995) Saville, D.A., see Grant 153 (1995) Zhou, J.M., see Guo 153 (1995) 110 jovenncoe CRVSTAL GROWTH ELSEVIER Journal of Crystal Growth 153 (1995) 186-187 Subject index Apparatus Lasers, crystals for — for melt growth — methyl-p-hydroxy benzoate 60 — — by Bridgman-Stockbarger method ~— chromium doped yttrium aluminum borate 169 — — — of semiconductors with BN coated ampoules 97 — for solution growth Manganese — — by crystallization in microgravity — arsenide antimonide 25 — — — of proteins 175 Melt growth technique — for miscellaneous purposes — by Bridgman-Stockbarger method — - electrical conductivity measurement of liquid germanium - — of MOMONS (3-methoxy-4-methoxy-4’-nitrostilbene) 55 silicon 6 -— - of cadmium telluride 103 — by Czochralski method Cadmium — — of gallium arsenide 90 — telluride 103 — — of lithium niobate 164 Characterization — by liquid phase electroepitaxy — by AFM — — theory of 19 — — of spiral growth mechanism 63 Microgravity, growth under — by MAKYOH topography — of semiconductors 97 — — of indium phosphide 1 — of cadmium telluride 103 Computer simulation — of human protein 175 — of liquid phase electroepitaxy 131 Morphological stability — of liquid phase heteroepitaxy 11 — of gallium arsenide surfaces 81 - of misfit dislocation and critical thickness of zinc blende crystals 115 Nucleation Convection 19, 42, 123, 131 — of DCBO 140 Copper — aluminum disulphide 180 Phase diagram — gallium disulphide 158, 180 - of YBCO 151 Precursor Epitaxy, see Thin film growth - for YBCO 151 Gallium Silicon — indium arsenide 71 — germanium 6, 110 Germanium Solution growth technique — silicon 6, 110 — by gel method — -— of methyl-p-hydroxy benzoate 60 Hydrodynamics, see Convection — by flux method - - of BSCCO 146 Indium — - of yttrium aluminum borate 169 — phosphide 1, 71 — by slotting out — - of concanavalin A crystals 35 Kinetics Superconductivity materials, high 7, — of etching of gallium arsenide by Cl 81 — bulk — of growth 19, 25, 35, 42, 110, 140, 169 - - of BSCCO 146 — of interface control 71 — film Subject index - - of DBCO 140 — — of cyamine dye molecules 31 - - of YBCO 151 — by liquid phase electroepitaxy Superlattices, multilayers — — of gallium arsenide 131 ~ of III-V compounds 71 — — theory of 123 Surface energy, determination — — of gallium indium arsenide 71 — of interface energy 11 - — of indium phosphide 71 Surface morphology - - of silicon germanium 110 — of indium phosphide 1 — — theory of 140 - of YBCO 151 — by pulsed laser deposition Surface structure — — of bismuth copper vanadium oxide 63 - of protein crystals 35 ~ by vapor phase epitaxy — of gallium indium arsenide 71 - — through chemical vapor deposition - of etched gallium arsenide 81 - -— of copper aluminum disulphide 180 — of heteroepitaxy 115 ~ - of copper gallium disulphide 180 — through evaporation and condensation Thin film growth, epitaxy - - of manganese antimonide 25 — by atomic layer molecular beam epitaxy — — of manganese arsenide antimonide 25 - — theory of 140 — by hybrid plasma sputtering Vapor growth technique - - of YBCO 151 — by evaporation and condensation — by liquid phase epitaxy ~- — of copper gallium disulphide 158 — — of III-V compounds 11 — by vapor diffusion 175