Journal of Crystal Growth 1995: Vol 150 Index

27 Pages·1995·5.3 MB·English

ounce CRYSTAL
GROWTH
ELSEVIER Journal of Crystal Growth 150 (1995) 1395 1415
Author index
Abstreiter, G., see Niitzel 150 (1995) 1011 Auer, U., R. Reuter, C. Heedt, W. Prost and
Abstreiter, G.., see Brunner 150 (1995) 1050 FJ. Tegude, InP-based heterostructure
Abstreiter, G.., see Brunner 150 (1995) 1060 field-effect transistors with high-quality
Adachi, A.., see Liu 150 (1995) 299 short-period (InAs) va (GaAs) Im Super
Adachi, / \ , see Tomita 150 (1995) 377 lattice channel layers 150 (1995) 1225
Adachi, A , see Tanaka 150 (1995) Avanzini, V., see Bosacchi 150 (1995) 185
Adachi, A\., see Shimomura 150 (1995) Avanzini, V., see Bosacchi 150 (1995) S44
Adachi, A\. , see Kitada 150 (1995) Avery, A.R., D.M. Holmes, J.L. Sudijono,
Akinaga, H., K Tanaka, K. Ando and T I.S. Jones, M.R. Fahy and B.A. Joyce, A
Katayama, Fabrication and magneto scanning tunnelling microscopy study of
optical properties of epitaxial ferromag- the deposition of Si on GaAs(001); impli
netic Mn, _, Sb thin films grown on GaAs cations for Si 5-doping 150 (1995)
and sapphire 150 (1995) Azuma, T., see Shirakashi 150 (1995)
Alexandre, F., see Legay 150 (1995)
Allegri, P., see Bosacchi 150 (1995) Baba-Ali, N., see Foxon 150 (1995)
Allegri, P., see Bosacchi 150 (1995) Bachmann, K.J., see Dietz 150 (1995)
Alonso, M.L., see Ilg 150 (1995) Bando, Y., T Terashima, K. Shimura, Y
Andersson, T.G., see Thordson 150 (1995) Daitoh and Y. Yano, Effect of adjacent
Ando, H., see Tomioka 150 (1995) insulating oxide layers on superconduc
Ando, H., N. Okamoto, S. Yamaura, T tivity of one unit cell thick YBa,Cu,O, ,
Tomioka, T. Takahashi, H. Shigematsu, layers in PrBa,Cu,0,,/ YBa,Cu,0,
A. Kawano, S. Sasa and T. Fujii, High insulating oxide trilayers 150 (1995) 1074
current gain InGaP/GaAs heterojunc- Bando, Y., see Yoneda 150 (1995) 1090
tion bipolar transistors grown by multi- Baraldi, A., see Bosacchi 150 (1995) 844
wafer gas-source molecular beam epitaxy Barlett, D., see Tsui 150 (1995) 960
system 150 (1995) 1281 Barnett, S.J., see Whitehouse 150 (1995) 85
Ando, K., see Akinaga 150 (1995) 1144 Barthe, F , see Gérard 150 (1995) 351
Anwar, N., see Zhang 150 (1995) 950 Bassani, F , see Calcagnile 150 (1995) 712
776
Aoyagi, Y., see Cui 150 (1995) 616 Bauer, G., see Darhuber 150 (1995)
Aoyagi, Y., see Zhang 150 (1995) 622 Bauer, G., see Frank 150 (1995) 1190
Asahi, , See Marx 150 (1995) 551 Behr, T., D. Hommel, H. Cerva, J. Niirn
Asahi, H., see Kim 150 (1995) 574 berger, V. Beyersdorfer and G. Land-
Asahi, -. See Villaflor 150 (1995) 638 wehr, Structural and electrical properties
Asahi, - See Iwata 150 (1995) 833 of ZnSe laser diodes optimized by trans-
Asahi, ., See Yamamoto 150 (1995) 853 mission electron microscopy, reflection
Asahi, H., see Marx 150 (1995) 874 high energy electron diffraction, X-ray
Asami, K., see Kim 150 (1995) 574 diffraction and C-V profiling 150 (1995) 743
Asami, K., see Yamamoto 150 (1995) 853 Behrend, J., see Daweritz 150 (1995) 214
Asbeck, P.M., see Li 150 (1995) 562 Belogorokhov, A.1., see Villaflor 150 (1995) 779
Ashu, P.A., see Whitehouse 150 (1995) 85 Benchimol, J.L., see Legay 150 (1995) 394
Ashu, P.A., J.H. Jefferson, A.G. Cullis, W.E. Bender, H., see De Boeck 150 (1995) 1139
Hagston and C.R. Whitehouse, Molecu- Beresford, R., see Ohtani 150 (1995) 902
lar dynamics simulation of (100)InGaAs/ Beyersdorfer, V., see Behr 150 (1995) 743
GaAs strained-layer relaxation processes 150 (1995) Bhattacharya, P.K., see Malik 150 (1995) 984
1396 Author index
Bi, W.G , See l ! 150 (1995) 1375 Bruynseraede, C., see De Boeck 150 (1995) 1139
Bloch, J., see Etienne 150 (1995) 336 Budiman, M., see Kojima 150 (1995) 1175
Bochnia, R., see Kiinzel 150 (1995) 18 Bullough, T.J., see Joyce 150 (1995) 644
Boebel, F.G., H. Moller, B Hertel, H Byun, S.C., see Oh 150 (1995) 256
Grothe, G. Schraud, St Schroder and
P.P. Chow, In situ film thickness and
temperature control of molecular beam
epitaxy growth by pyrometric interferom Cahill, D.G., see Park 150 (1995)
etry 150 (1995) Calcagnile, L.. M. Di Dio, M. Lomascolo, R
Bohm, G.., see ROhr 150 (1995) Rinaldi, P. Prete, R Cingolani, I
Bohm, G., see Klein 150 (1995) Vanzetti, A. Bonanni, F Bassani, |
Bonanni, A.., see Calcagnile 150 (1995) Sorba and A Franciosi, Recombination
Bonanni, A., see Vanzetti 150 (1995) mechanisms in photopumped Zn Cd,
Borghs, G., see De Boeck 150 (1995) Se /Z nSe multiple quantum well lasers 150 (1995)
Bosacchi, A., F. Colonna, S. Franchi, P Pas Calcott, P.D.J., see Freer 150 (1995)
carella, P. Allegri and V Avanzini, In Cantwell, G.., see Eason 150 (1995)
dium surface segration in InGaAs-based Carnera, A., see Bosacchi 150 (1995)
structures prepared by molecular beam Cebollada, A.., see Farrow 150 (1995)
epitaxy and atomic layer molecular beam Cerva, H., see Behr 150 (1995)
epitaxy 150 (1995) Chaly, V.P.. D.M. Demidov, G.A Fokin,
Bosacchi, A., [ Gombia, R. Mosca, § S.Yu. Karpov, V.. Myachin, Yu.V
Franchi, A. Carnera and A. Gasparotto, Pogorelsky, I.Yu. Rusanovich A.P
Shallow donors and deep levels in GaAs Shkurko and A.l Ter-Martirosyan, Use
grown by atomic layer molecular beam of molecular beam epitaxy for high-power
epitaxy 150 (1995) AlGaAs laser production 150 (1995)
Bosacchi, A., S. Franchi, P. Allegri, V Chan, Y.W., H. Wang, I.K. Sou, K.S. Wong
Avanzini, A. Baraldi, C. Ghezzi, R. Mag and G.K.L. Wong, Molecular beam epi
nanini, A. Parisini and L. Tarricone, taxial growth and characterization of Zn
Electrical and photoluminescence prop- STe epilayers and ZnSTe/ZnSe super
erties of undoped GaSb prepared by lattices on Si substrates 150 (1995)
molecular beam epitaxy and atomic layer Chang, C.Y , see Cheng 150 (1995)
molecular beam epitaxy 150 (1995) Chen, A.C., see Pearah 150 (1995)
Botchkarev, A.., see Morkoc 150 ( 1995) Chen, , see Konkar 150 (1995)
Botchkarev, A. , see Park 150 (1995) 1275 Chen, , see Xie 150 (1995)
Bottcher, J., see Kiinzel 150 (1995) 18 Chen, , see Hasenberg 150 (1995)
Bottcher, J., see Kiinze! 150 (1995) 1241 Chen, X., see Zhang 150 (1995)
Bottcher, J., see Kiinzel 150 (1995) 1323 Cheng, K.Y., see Pearah 150 (1995)
Brandt, O., see Kajikawa 150 (1995) 431 Cheng, T.M., C.Y. Chang and J.H Huang,
Brar, B., see Makimoto 150 (1995) 883 Formation and characterization of
Bratina, G., see Vanzetti 150 (1995) 765 GaAs As superlattice grown by molecu
Braun, W and K.H Ploog, Simultaneous lar beam epitaxy at low substrate temper
monitoring of different surface processes ature 150 (1995) 28
on different streaks of the reflection high Cheng, T.S., see Foxon 150 (1995) 892
energy electron diffraction pattern 150 (1995) Chey, S.J., see Park 150 (1995) 1275
Bruni, M.R., N. Gambacorti, S. Ka¢ciulis, G Chichibu, S., see Niki 150 (1995) 1201
Mattogno, M.G Simeone, L.G. Quag- Chin, A., H.Y. Lin and K.Y. Hsieh, Strong
liano, N Tomassini and B. Jusserand, enhancement of the optical and electrical
Role of the substrate deoxidation process properties, and spontaneous formation of
in the growth of strained InAs/InP het an ordered superlattice in (1iDB Al
erostructures 150 (1995) GaAs 150 (1995)
Brunner, J.. M. Gail, G. Abstreiter and P Chiu, T.H., W.T. Tsang, M.D. Williams,
Vogl, SiGe quantum wells on (110) Si C.A.C. Mendonga, K. Dreyer and F.G
grown by molecular beam epitaxy 150 (1995) 1050 Storz, Effects of cation diffusion during
Brunner, J., P. Schittenhelm, J. Gonder- chemical etching 150 (1995)
mann, B. Spangenberg, B Hadam, T Cho, A.Y., Twenty years of molecular beam
Koster, H.G. Roskos, H Kurz, H. Goss- epitaxy 150 (1995)
ner, I. Eisele and G Abstreiter, SiGe Chow, D.H., Y.H. Zhang, R.H. Miles and
wires and dots grown by local epitaxy 150 (1995) 1060 H.L. Dunlap, Structural and transport
Brunthaler, G., see Darhuber 150 (1995) 775 properties of InAs /AISb superlattices 150 (1995)
Author index
how P.P., see Boebel 150 (1995) 54 De Boeck, J., C. Bruynseraede, H. Bender
‘how ~ # see Reich 150 (1995) 849 A. Van Esch, W. Van Roy and G. Borghs,
‘how, P.P., see Van Hove 150 (1995) 9OR Epitaxial ferromagnetic (tr MnAl/Co)
hu, M., see Zhu 150 (1995) 1045 and (Co/CoA)D multilayers on GaAs
hun YJ., Y. Okada and M. Kawabe, Ef (001) grown by molecular beam epitaxy 150 (1995) 1139
fect of atomic hydrogen in highly lattice Demidov, D.M., see Chaly 150 (1995) 1350
mismatched molecular beam epitaxy 150 (1995) Di Dio, M., see Calcagnile 150 (1995) 712
ingolani, R see Calcagnile 150 (1995) Dickmann, J., see Shitara 150 (1995) 1261
ingolani, R see Vanzetti 150 (1995) Dietrich, B see Osten 150 (1995) 93]
lark, G.F see Whitehouse 150 (1995) Dietz, N 4. Miller, J.1 Kelliher, D. Ven
larke, R., see Tsui 150 (1995) ables and KJ Bachmann, Migration
ohen, P.I., see Dabiran 150 (1995) enhanced pulsed chemical beam epitaxy
ollan, H., see Zhang 150 (1995) of GaP on Si(001) 150 (1995) 691
olonna, F., see Bosacchi 150 (1995) Dignam, M.M., see Wegscheider 150 (1995) 285
ook, Jr., J.W., see Eason 150 (1995) Dong, H.K see I j 150 (1995) 246
osimini G.J., see Van Hove 150 (1995) Dong, H.K see Li 150 (1995) 562
rump, P.A., see Henini 150 (1995) Dreyer, K.., see Chiu 150 (1995) 546
rump, P.A., see Henini 150 (1995) Dunlap, H.1 see Chow 150 (1995) 879
ui, J., S. Zhang, A. Tanaka and Y. Aoyagi,
Study on dimer density evolution during Eason, D., J. Ren, Z. Yu, C. Hughes, J.W
GaAs short-pulse supersonic nozzle beam Cook, Jr., J.F. Schetzina, N.A. El-Masry
epitaxy on (2 X 4)y initial surface by mil G. Cantwell and W.C. Harsh, Blue and
lisecond time-resolved reflectance differ green light-emitting diode structures
ence 150 (1995) grown by molecular beam epitaxy on
ui, J., see Zhang 150 (1995) ZnSe substrates 150 (1995) 718
ullis, A.G., see Whitehouse 150 (1995) berl, K., see Shitara 150 (1995) 1261
‘ullis, A.G.., see Ashu 150 (1995) isele, I see Brunner 150 (1995) 1060
unningham, J.I M.D. Williams R.N kenstedt MJ H Yamaguchi and Y
Pathak and W.Y. Jan, Non-linear As(P) Horikoshi, Effects of alloy composition
incorporation in GaAs,_,P. on GaAs on the As desorption from and adsorp
and InAs,_,P, on InP 150 (1995) tion on strained In Ga _ As surfaces 150 (1995)
‘unningham, J.E., K.W. Goossen, W.Y. Jan l-Masry, N.A., see Eason 150 (1995)
J.A. Walker and R.N. Pathak, Monolithic mura S., Y. Matsui and S. Gonda, Phonon
integration of 850 nm quantum well mod- behavior and interfacial stress in the
ulators to very large scale integrated strained (InAs), (GaAs), ultrathin su
electronics on GaAs 150 (1995) 1363 perlattices 150 (1995)
ndoh, Y., see Imaizumi 150 (1995)
ngelhardt, C.M., see Niitzel 150 (1995) 1011
tienne, B., F Laruelle, J Bloch, L. Sfaxi
Dabiran, A.M. and P.I Cohen, Surface re and fF Lelarge, Organized growth of
constructions and growth mode transi- GaAs AIAs lateral structures on atomic
tions of AlAs(100) 150 (1995) 23 step arrays: what is possible to do? 150 (1995) 2523 506
Daitoh, Y., see Bando 150 (1995) 1074
d’Anterroches, C., see Gérard 150 (1995) 467 ahy M.R., see Sato 150 (1995)
Darhuber, A.A., H Straub, S. Ferreira, W ahy, M.R., see Avery 150 (1995) 202
Faschinger, Koppensteiner, G. Brun- ahy, M.R., see Hu 150 (1995) 777
thaler and G. Bauer, Structural investiga aleev, N.N., see Izumi 150 (1995) 1115
tion of II-VI compound semiconductor an, T.-W , se l I 150 (1995) 1270
quantum wires using triple-axis X-ray an, Y., see Zhang 150 (1995) 964
diffractometry 150 (1995) an, Z., see Park 150 (1995) 1275
Davies, J.H., see Holland 150 (1995) arrow, R.F.C., R.F. Marks, A. Cebollada,
Daweritz, L., see Nérenberg 150 (1995) G.R. Harp, T.A. Rabedeau, M.F Toney,
Daweritz, L., H. Kostial, R. Hey, M. Ram- D. Weller and S.S.P Parkin, Magnetic
steiner, J.W agner, M. Maier, J. Behrend superlattices molecular beam epitaxial
and M. Horicke, Atomic-scale controlled growth and properties of artificially and
incorporation of ultrahigh-density Si dop- naturally-layered structures 150 (1995) 1126
ing sheets in GaAs 150 (1995) Faschinger, W , see Darhuber 150 (1995) Ss
Daweritz, L., see Wassermeier 150 (1995) Fernandez, J.M., see Zhang 150 (1995) 950
1398 Author index
Fernandez, J.M., see Zhang 150 (1995) 1015 Fukatsu, S., D.K. Nayak and Y. Shiraki,
Ferreira, S.., see Darhuber 150 (1995) 775 Cavity mode luminescence of strained
Fischer, A., see Mazuelas 150 (1995) 251 Si, _,.Ge,/Si quantum wells grown on a
Fisher, P.A., E. Ho, J.L. House, G.S. Pet buried-oxide substrate 150 (1995) 1055
rich, L.A. Kolodziejski, J. Walker and Fukatsu, S., see Usami 150 (1995) 1065
N.M. Johnson, p-Type and n-type doping Fukatsu, S., see Higgs 150 (1995) 1070
of ZnSe: effects of hydrogen incorpora Fukatsu, S., see Takeuchi 150 (1995) 1338
tion 150 (1995) 729 Fukuchi , F., see Shirakashi 150 (1995) 585
Fokin, G.A., see Chaly 150 (1995) 1350 Fuyuki, T , see Hatayama 150 (1995) 934
Fons, P.J., see Niki 150 (1995) 1201
Foxon, C.T., T.S. Cheng, S.V. Novikov, D.E
Lacklison, L.C. Jenkins, D. Johnston, Gail, M., see Brunner 150 (1995) 1050
J.W. Orton, S.E. Hooper, N. Baba-Ali, Gailhanou, M., see Oesterle 150 (1995) 1313
I.L. Tansley and V.V. Tret’yakov, The Gallagher, B.L., see Henini 150 (1995) 446
growth and properties of group III ni- Gallagher, B.L., see Henini 150 (1995) 451
trides 150 (1995) Gambacorti, N.., see Bruni 150 (1995) 123
Franchi, S.., see Bosacchi 150 (1995) Gamo, K., see Liu 150 (1995) 299
Franchi, S., see Bosacchi 150 (1995) Gao, G.B., see Park 150 (1995) 1275
Franchi, S.., see Bosacchi 150 (1995) Garbuzov, D., see Lee 150 (1995) 1354
Franciosi, A.., see Calcagnile 150 (1995) Gasparotto, A.., see Bosacchi 150 (1995) 261
Franciosi, A., see Vanzetti 150 (1995) Gastev, S.V., see Izumi 150 (1995) 1115
Frank, N., G Springholz and G Bauer, A Génin, J.B., see Gérard 150 (1995) 351
novel method for the study of strain re- Gérard, J.M., J.B. Génin, J. Lefebvre, J.M
laxation in lattice-mismatched heteroepi- Moison, N. Lebouché and F. Barthe, Op-
taxy: ultra-high vacuum scanning tunnel- tical investigation of the self-organized
ing microscopy combined with in situ re- growth of InAs/GaAs quantum boxes 150 (1995)
flection high-energy electron diffraction 150 (1995) Gérard, J.M. and C. d’Anterroches, Growth
Franklin, J., see Pao 150 (1995) of InGaAs/GaAs heterostructures with
Freer, R.W., T. Martin, P.A. Lane, C.R abrupt interfaces on the monolayer scale 150 (1995)
Whitehouse, T.J. Whitaker, M. Houlton, Geva, M., see Li 150 (1995)
P.D.J. Calcott, D. Lee, A.C. Jones and Ghezzi, C.., see Bosacchi 150 (1995)
S.A. Rushworth, Chemical beam epitax- Gombia, E., see Bosacchi 150 (1995)
ial growth of high optical quality AlGaAs Gomyo, A., K. Makita, I]. Hino and T. Suzuki,
the influence of precursor purity on Effects of substrate misorientation on
material properties 150 (1995) triple-period ordering in AllnAs 150 (1995) 533
Fuchs, F., see Schmitz 150 (1995) Gomyo, A., see Makita 150 (1995) 579
Fujii, T., see Tomioka 150 (1995) Gonda, S , see Emura 150 (1995) 513
Fujii, T., see Ando 150 (1995) Gonda, S , see Marx 150 (1995) 551
Fujikura, H. and H. Hasegawa, Fabrication Gonda, S. , see Kim 150 (1995) 574
of InGaAs ridge quantum wires by selec- Gonda, S , see Villaflor 150 (1995) 638
tive molecular beam epitaxy and their Gonda, S , see Iwata 150 (1995) 833
characterization 150 (1995) 327 Gonda, S S., see Yamamoto 150 (1995) 853
Fujimoto, M., see Yao 150 (1995) 823 Gonda, S., see Marx 150 (1995) 874
Fujishiro, H.1., see Kawaguchi 150 (1995) 1256 Gondermann, J., see Brunner 150 (1995) 1060
Fujita, K.., see Hirai 150 (1995) 209 Gong, D., see Zhang 150 (1995) 964
Fujita, K.., see Ohnishi 150 (1995) 231 Goodhew, P.J., see Joyce 150 (1995) 644
Fujita, K.., see Liu 150 (1995) 299 Goossen, K.W., see Cunningham 150 (1995) 1363
Fujita, K.., see Vaccaro 150 (1995) 503 Gossner, H., see Brunner 150 (1995) 1060
Fujita, Sg., see Suda 150 (1995) 738 Goto, H., W. Shi, T. Suzuki, N. Sawaki, H.
Fujita, Sz., see Suda 150 (1995) 738 Ito and K. Hara, Negative magnetoresis-
Fujiwara, K., see Jahn 150 (1995) 43 tance in Si atomic-layer-doped GaAs 150 (1995)
Fukatsu, S., see Muraki 150 (1995) 49 Goto, H., see Moriyasu 150 (1995)
Fukatsu, S. and Y. Shiraki, Luminescence of Goto, S., see Morishita 150 (1995)
strained Si, ,Ge,/Si quantum wells and Goto, S., see Nomura 150 (1995)
microstructures 150 (1995) 1025 Goto, S., C. Jelen, Y. Nomura, Y. Morishita
Fukatsu, S., see Mine 150 (1995) 1033 and Y. Katayama, Selective-area epitax-
Fukatsu, S., see Sunamira 150 (1995) 1038 ial growth of GaAs by gas-source molecu-
Author index
lar-beam epitaxy using metal gallium and Hatakoshi, G.., see Parbrook 150 (1995)
trisdimethylaminoarsine 150 (1995) Hatakoshi, G.., see Nishikawa 150 (1995)
Gotoda, M., H. Sugimoto, S. Maruno, T. Isu Hatano, , see Yoneta 150 (1995)
W. Susaki and M. Nunoshita, Symmetric Hatayama, T., Y Tarui, T. Fuyuki and H
InP mirror facets fabricated by selective Matsunami, Low-temperature heteroepi
chemical beam epitaxy on reactive-ion- taxial growth of cubic SiC on Si using
etched sidewalls 150 (1995) hydrocarbon radicals by gas source
Gétz, W.K., see Oberman 150 (1995) molecular beam epitaxy 150 (1995)
Grahn, H.T , see Jahn 150 (1995) Hayafuji, N., see Izumi 150 (1995)
Grandjean, N.., see Tournié 150 (1995) Hayafuji, N., see Izumi 150 (1995)
Greco, D., see Vanzetti 150 (1995) Hayashida, K.., see Takagi 150 (1995)
Griebenow, U., see Kiinzel 150 (1995) Heedt, C , see Auer 150 (1995)
Grothe, H., see Boebel 150 (1995) Heidarpour, E.., see Sano 150 (1995)
Gulari, E., see Malik 150 (1995) Heinecke, H., see Popp 150 (1995)
Gunshor, R.L., J. Han, A.V. Nurmikko and Heiss, H., see Klein 150 (1995)
A. Salokatve, The development of low Hellman, O., see Niki 150 (1995)
voltage room temperature continuous Henderson, R.H., see Sun 150 (1995)
wave laser diodes 150 (1995) Henini, M., P.A. Crump, PJ. Rodgers, B.1
Gallagher, AJ. Vickers and G. Hill,
Hadam, B., see Brunner 150 (1995) Molecular beam epitaxy growth and
Hagston, W.E., see Whitehouse 150 (1995)
properties of GaAs/(AlGa)As p-type
Hagston, W.E., see Ashu 150 (1995) heterostructures on (100), (011), (111)B,
Han, J., see Gunshor 150 (1995) (21DB, GIDB, and GIDA oriented
Hanamaki, Y , see Takeuchi 150 (1995)
GaAs 150 (1995)
Hara, K.., see Goto 150 (1995) Henini, M., PJ. Rodgers, P_A. Crump, B.1
Hara, K., see Watanabe 150 (1995)
Gallagher and G. Hill, The growth and
Hara, K., H. Machimura, M. Usui, H
physics of ultra-high-mobility two-dimen-
Munekata, H. Kukimoto and J. Yoshino, sional hole gas on (311)A GaAs surface 150 (1995)
Growth and characterization of wide
Herres, N., see Schmitz 150 (1995)
bandgap Zn, _,Hg,Se 150 (1995) Hertel, B., see Boebel 150 (1995)
Harbison, J.P., see Tanaka 150 (1995) Heun, S., see Sugiyama 150 (1995)
Harde, P., see Kiinzel 150 (1995) Heun, S., M. Sugiyama, S. Maeyama, Y
Harmand, J.C., see Legay 150 (1995) Watanabe and M. Oshima, Morphology
Harmand, J.C., J.P. Praseuth, E. Idiart-
of thin SrF, films on InP(111) studied by
Alhor, R. Palla, J.L. Pelouard and M
reflection high-energy electron diffrac-
Quillec, Continuous molecular beam epi-
tion 150 (1995) 1108
taxy of arsenides and phosphides applied
Heun, S., see Maeyama 150 (1995) 1122
to device structures on InP substrates 150 (1995) 1292 Hey, R., see Jahn 150 (1995) 43
Harp, G.R., see Farrow 150 (1995) 1126 Hey, R., see Daweritz 150 (1995) 214
Harris, Jr., J.S., see Oberman 150 (1995) 912 Heyn, Ch. and M. Harsdorff, Simultaneous
Harris, Jr., J.S., see Weckwerth 150 (1995) 1150 reflection high-energy electron diffrac
Harsdorff, M., see Heyn 150 (1995) 117 tion oscillations and mass spectroscopy
Harsh, W.C.., see Eason 150 (1995) 718 investigations during molecular beam
Hartung, J., see Zhang 150 (1995) 950 epitaxy growth of (001) GaAs — smooth
Hase, A., see Kiinzel 150 (1995) 18 surfaces or stoichiometric films? 150 (1995)
Hase, A., see Kiinzel 150 (1995) 1241 Higashiwaki, M., see Marx 150 (1995)
Hase, A., see Kiinzel 150 (1995) 1323 Higgs, V., E.C. Lightowers, N. Usami, Y
Hasegawa, F., see Kumagai 150 (1995) 989 Shiraki, T. Mine and S. Fukatsu, Catho-
Hasegawa, H., see Saitoh 150 (1995) 96 doluminescence investigation of SiGe
Hasegawa, H., see Fujikura 150 (1995) 327 quantum wires fabricated on V-groove
Hasegawa, H., see Ozeki 150 (1995) 602 patterned Si substrates 150 (1995) 1070
Hasenberg, T.C., P. Chen, A. Madhukar,
Higuchi, K., see Mishima 150 (1995) 1230
A.R. Kost, J. Visher and A. Konkar,
Higuchi, T., see Tanaka 150 (1995) 388
InAs/GaAs short-period strained-layer
Hill, G., see Henini 150 (1995) 446
superlattice modulators grown using ad-
Hill, G.., see Henini 150 (1995) 451
vanced digital reflection high-energy
Hino, I., see Gomyo 150 (1995) 533
electron diffraction techniques 150 (1995) 1368 Hino, I., see Makita 150 (1995) 579
Hashizume, T., see Ichimiya 150 (1995) 136
1400 Author index
Hirai, M., H. Ohnishi, K. Fujita, P.O. Vac- Horikoshi, Y., see Yamada 150 (1995) 421
caro and T. Watanabe, Diffusion of Si- Horikoshi, Y., see Ekenstedt 150 (1995) 473
acceptor in 6-doped GaAs grown on Horikoshi, Y., see Suzuki 150 (1995) 1266
GaAs(111)A by molecular beam epitaxy 150 (1995) Hoshi, H., see Kikuchi 150 (1995) 897
Hirai, M., see Ohnishi 150 (1995) Hoshida, T., M. Tsuchiya, Y. Nakamura and
Hiraoka, Y.S. and M. Mashita, Ab initio T. Kamiya, Studies on interface rough-
study on the As-stabilized surface struc ness scattering effects in molecular beam
ture in AlAs molecular beam epitaxy 150 (1995) epitaxy grown resonant tunneling struc
Hirata, S., see Teraguchi 150 (1995) tures 150 (1995) 38
Hiratani, Y., M. Sasaki, S. Yoshida and M Hoshiyama, M., see Sato 150 (1995) 734
Yamada, Stability of GaAs oxide under Hosoda, M., see Takahashi 150 (1995) 1333
metalorganic molecular beam epitaxy Hosomi, K., see Mozume 150 (1995) 59]
process 150 (1995) 404 Hosoya, M., see Watanabe 150 (1995) 612
Hirayama, Y., see Nishikata 150 (1995) 1328 Houdré, R., see Oesterle 150 (1995) 1313
Hiroi, M. and T. Tatsumi, Epitaxial growth Houlton, M., see Freer 150 (1995) 539
of Si, yGe.C. by ultrahigh vacuum House, J.L., see Fisher 150 (1995) 729
chemical vapor deposition using disilane, Hsieh, K.-C., see Tseng 150 (1995) 1206
germane and acetylene 150 (1995) 1005 Hsieh, K.C., see Pearah 150 (1995) 293
Hirose, H., see lizuka 150 (1995) 13 Hsieh, K.Y., see Chin 150 (1995) 436
Hishida, Y., T. Yoshie, K. Yagi, T. Yam- Hsin, Y.M., see Li 150 (1995) 562
aguchi and T. Niina, Reduction of p Hu, J., see Zhang 150 (1995) 964
ZnSe /p-GaAs non-ohmic barrier by in Hu, S.J., M.R. Fahy, K. Sato and B.A. Joyce,
serting a GaN buffer layer 150 (1995) Tin as an n-type dopant in the molecular
Hiyamizu, $ , see Liu 150 (1995) beam epitaxial growth of GaAs(111)A 150 (1995)
Hiyamizu, S , see Tomita 150 (1995) Huang, H.K., see Takeuchi 150 (1995)
Hiyamizu, S , see Tanaka 150 (1995) Huang, J.H., see Cheng 150 (1995)
Hiyamizu, S., see Shimomura 150 (1995) Huang, W., see Zhang 150 (1995)
Hiyamizu, S., see Tsuda 150 (1995) Hughes, C., see Eason 150 (1995)
Hiyamizu, S , see Kitada 150 (1995) Hull, R., see Wegscheider 150 (1995)
Hiyamizu, S , see Marx 150 (1995) Hung, C.Y., see Weckwerth 150 (1995) 1150
Hiyamizu, S., see Marx 150 (1995) Hurich, M., see Popp 150 (1995) 528
Hijelt, K., see Zhang 150 (1995) Hwang, H.-L., see Tseng 150 (1995) 1206
Ho, E., see Fisher 150 (1995)
Hofsass, V., see Kiinzel 150 (1995) 1
Hogg, J.C.H., see Whitehouse 150 (1995)
Holland, M.C., A.H. Kean and C.R. Stanley, Ichii, A., see Kuze 150 (1995)
Silicon compensation and scattering Ichikawa, S., see Matsumura 150 (1995)
mechanisms in two-dimensional electron Ichimiya, A., Q.-K. Xue, T. Hashizume and
gases on (110)GaAs 150 (1995) T. Sakurai, Surface structure of GaAs
Holland, M.C., E. Skuras, J.H. Davies, LA (001)-(2 x 4) a, B and y phases 150 (1995)
Larkin, A.R. Long and C.R. Stanley, The Ichimiya, A., H. Nomura, Y. Ito and H
effect of growth temperature, 5-doping Iwashige, Gold growth on Si(il1) y3
and barrier composition on mobilities in x v3 Ag and y3 x y3 Au surfaces 150 (1995) 1169
shallow AlGaAs—GaAs two-dimensional Ichimori, F., see Iwabuchi 150 (1995) 1302
electron gases 150 (1995) 1215 Ichimura, Y., K. Kishino, M. Satake, M
Holmes, D.M., see Avery 150 (1995) 202 Kuramoto and A. Yoshida, Characteriza-
Holmes, S.N., see McElhinney 150 (1995) 266 tion of N-doped MgZnSSe compound
Holzmann, M., see Niitzel 150 (1995) 1011 system grown on intentionally misori-
Homma, Y , see Osaka 150 (1995) 73 ented GaAs substrates by molecular
Homma, Y , see Inoue 150 (1995) 107 beam epitaxy 150 (1995) 812
Hommel, D., see Behr 150 (1995) 743 Ichinose, H., see Koshiba 150 (1995) 322
Hong, C.Y., see Oh 150 (1995) 256 Idiart-Alhor, E.., see Harmand 150 (1995) 1292
Hong, M., New frontiers of molecular beam Igarashi, T , See Sano 150 (1995) 1246
epitaxy with in-situ processing 150 (1995) 277 lida, T., Y. Makita, S. Kimura, Y. Kawa-
Hooper, S.E., see Foxon 150 (1995) 892 sum, A. Yamada, S. Uekusa and T
Hopkins, J., see Leys 150 (1995) 633 Tsukamoto, Carbon doping into GaAs
Horicke, M., see Daweritz 150 (1995) 214 using combined ion beam and molecular
Horikoshi, Y., see Yamaguchi 150 (1995) 148 beam epitaxy method 150 (1995) 236
Author index 1401
lizuka, K., K. Matsumaru, T. Suzuki, H Ito, Y., see Ichimiya 150 (1995) 1169
Hirose, K. Suzuki and H. Okamoto, Ar- Itoh, S. and A. Ishibashi, ZnMgSSe based
senic-free GaAs substrate preparation laser diodes 150 (1995) 701
and direct growth of GaAs /A lGaAs Iwabuchi, T., T. Ito, M. Yamamoto, K. Sako,
multiple quantum well without buffer Y. Kanayama, K. Nagase, T. Yoshida, F
layer 150 (1995) Ichimori and I. Shibasaki, High sensitiv-
lizuka, N., K Tsuda, T. Nozu, T. Sugiyama, ity Hall elements made from Si-doped
Y. Kuriyama and M Obara, Molecular InAs on GaAs substrates by molecular
beam epitaxy growth for a heavily-doped beam epitaxy 150 (1995) 1302
thin base layer of heterojunction bipolar Iwabuchi, T., see Kuze 150 (1995) 1307
transistors used for high-speed integrated Iwai, Y , see Yano 150 (1995) 868
circuits 150 (1995) Iwamura, H., see Kawamura 150 (1995) 597
Ikeda, H., see Zaima 150 (1995) Iwase, F , see Nishikata 150 (1995) 1328
Ikoma, N. and S. Ohkouchi, GaAs initial Iwashige, H., see Ichimiya 150 (1995) 1169
growth on InAs (001) vicinal surfaces ob Iwata, K., see Kim 150 (1995) 574
served by scanning tunneling microscopy 150 (1995) Iwata, K., H. Asahi, J.H. Kim, X.F. Liu, §
llegems, M., see Oesterle 150 (1995) Gonda, Y. Kawaguchi, A. Ohki and T
lig, M., M.I. Alonso, A. Mazuelas, E Tournié Matsuoka, Gas source molecular beam
and K.H. Ploog, Aspects of low hetero- epitaxy growth of InAIP band offset re-
structure symmetry in (311)A (In,Ga)As duction layers on p-type ZnSe 150 (1995) 833
GaAs 150 (1995) lyori, M., S. Suzuki, K. Yamano, H. Suzuki,
Imai, K., see Takojima 150 (1995) K. Takahashi and Y. Yoshisato, Prepara-
Imai, S., see Sugiyama 150 (1995) tion of BaBiO, thin films using an oxy-
Imaizumi, M., Y. Endoh, M. Suita, K. Oht- gen radical beam source 150 (1995) 1086
suka, T. Isu and M. Nunoshita, Growth Izumi, A., K. Tsutsui, N.S. Sokolov, N.N
of ZnS and ZnSSe by gas-source molecu- Faleev, S.V. Gastev, S.V. Novikov and
lar beam epitaxy using hydride group VI N.L. Yakovlev, High-quality CdF, layer
sources 150 (1995) growth on CaF,/Si(111) 150 (1995) 1115
Inoue, K.., see Takeuchi 150 (1995) Izumi, S., N. Hayafuji, T. Sonoda, §
Inoue, K.., see Yamamoto 150 (1995) Takamiya and S. Mitsui, Less than 10
Inoue, M.., see Yoh 150 (1995) defects /cm*- um in molecular beam epi-
Inoue, M.., see Yano 150 (1995) taxy grown GaAs by arsenic cracking 150 (1995)
Inoue, N., see Osaka 150 (1995) Izumi, S., M. Sakai, T. Shimura, M. Tsug-
Inoue, N., J. Osaka and Y. Homma, Nucle- ami, N. Hayafuji, T. Sonoda, S. Takamiya,
ation of islands in GaAs molecular beam W. Susaki and S. Mitsui, Quantitative
epitaxy studied by in-situ scanning elec- correlation between oxygen impurity and
tron microscopy 150 (1995) current gain B of AlGaAs /GaAs hetero-
Inoue, Y., see Tanaka 150 (1995) junction bipolar transistors grown by
lrikawa, M., see Nishikata 150 (1995) molecular beam epitaxy 150 (1995) 1287
Ishibashi, A., see Itoh 150 (1995)
Ishibashi, T., H. Soutome, Y. Okada and M
Kawabe, Bi,Sr,Ca,,_,Cu,O, thin films by Jahn, U., K. Fujiwara, R. Hey, J. Kastrup,
growth interruption technique 150 (1995) H.T. Grahn and J. Minniger, Influence
Ishida, M., see Wado 150 (1995) of growth related thickness fluctuations
Ishikawa, M., see Parbrook 150 (1995) on the spectral and lateral luminescence
Ishikawa, M., see Nishikawa 150 (1995) intensity distribution in GaAs quantum
Ishikawa, Y. and N. Shibata, Simultaneous wells 150 (1995)
Si molecular beam epitaxy and high-dose Jan, W.Y., see Cunningham 150 (1995)
ion implantation 150 (1995) 980 Jan, W.Y., see Cunningham 150 (1995)
Ishimoto, K.., see Kumagai 150 (1995) 989 Jefferson, J.H., see Whitehouse 150 (1995)
Ishiwara, H., see Ohmi 150 (1995) 1104 Jefferson, J.H., see Ashu 150 (1995)
Ishizuka, Y., see Takojima 150 (1995) 770 Jelen, C., see Goto 150 (1995)
Isu, T., see Morishita 150 (1995) 110 Jenkins, L.C., see Foxon 150 (1995)
Isu, T., see Gotoda 150 (1995) 399 Jimbo, T., see Uchida 150 (1995)
Isu, T., see Imaizumi 150 (1995) 707 Johnson, A.D., see Whitehouse 150 (1995)
Ito, H., see Goto 150 (1995) 271 Johnson, E.A., see McElhinney 150 (1995)
Ito, T , see Shiraishi 150 (1995) 158 Johnson, M.D., see Orme 150 (1995)
Ito, T , see Iwabuchi 150 (1995) 1302 Johnson, M.D., see Wassermeier 150 (1995)
1402 Author index
Johnson, N.M., see Fisher 150 (1995) 729 Kawaguchi, T., M. Sato, H.1. Fujishiro and
Johnston, D., see Foxon 150 (1995) 892 S. Nishi, Growth conditions and device
Jones, A.C.., see Freer 150 (1995) 539 performance of InGaAs/AlGaAs pseu-
Jones, A.C., see Joyce 150 (1995) o44 domorphic inverted high electron mobil-
Jones, T.S., see Avery 150 (1995) 202 ity transistor 150 (1995) 1256
Joyce, B.A., see Sato 150 (1995) Kawaguchi, Y , see Iwata 150 (1995) 833
Joyce, B.A., see Avery 150 (1995) Kawaguchi, Y , see Sugiyama 150 (1995) 994
Joyce, B.A., see Hu 150 (1995) Kawai, T , see Takagi 150 (1995) 677
Joyce, B.A.., see Zhang 150 (1995) Kawakami, Y , see Suda 150 (1995)
Joyce, B.A., see Zhang 150 (1995) 1015 Kawamura, K., see Villaflor 150 (1995) 779
Joyce, T.B., T.L. Pfeffer, TJ. Bullough, G Kawamura, Y. and H. Iwamura,
Petkos, PJ Goodhew and A.C. Jones, InGaAsP /InAlAs type I/type II multi-
The use of diethylsulphide for the doping ple quantum well structures grown by gas
of GaAs, AlGaAs and InGaAs grown by source molecular beam epitaxy 150 (1995)
chemical beam epitaxy 150 (1995) Kawano, A., see Ando 150 (1995)
Jusserand, B., see Bruni 150 (1995) Kawasumi, Y., see lida 150 (1995)
Kean, A.H., see Holland 150 (1995)
Kaciulis, S., see Bruni 150 (1995) Keir, A.M., see Whitehouse 150 (1995)
Kaden, C., see Kiinzel 150 (1995) Kelliher, J.T., see Dietz 150 (1995)
Kadoya, Y., T. Yoshida, Y. Nagamune, H Kikuchi, A., H. Hoshi and K. Kishino, Ef-
Noge and H. Sakaki, Self-formation of fects of V/III supply ratio on improve-
100 nm scale wire structures during ment of crystal quality of zincblende GaN
molecular beam epitaxial growth of Al grown by gas source molecular beam epi
GaAs on patterned substrates 150 (1995) taxy using RF-radical nitrogen source 150 (1995)
Kajikawa, Y., O. Brandt, K. Kanamoto and Kim, J.H., H. Asahi, K. Asami, K. Iwata,
N. Tsukada, Optical anisotropy of (11N) S.G. Kim, T. Ogura and S. Gonda, Gas
and vicinal (001) quantum wells 150 (1995) source molecular beam epitaxial growth
Kalburge, A., see Xie 150 (1995) of GaP /AIP modulated superlattices and
Kamijoh, T., see Takamori 150 (1995) their optical properties 150 (1995)
Kamikubo, N., see Liu 150 (1995) Kim, J.H., see Iwata 150 (1995)
Kamiya, I., see Sato 150 (1995) Kim, S.-B., see Ro 150 (1995)
Kamiya, T.., see Hoshida 150 (1995) Kim, S.G., see Kim 150 (1995)
Kamiyama, S., see Yao 150 (1995) 823 Kim, S.K., see Oh 150 (1995)
Kan, Y., see Takahashi 150 (1995) 1333 Kim, T.W., see Oh 150 (1995)
Kanamoto, K.., see Kajikawa 150 (1995) 431 Kimata, M., see Villaflor 150 (1995)
Kanayama, Y.., see Iwabuchi 150 (1995) 1302 Kimura, N., see Takojima 150 (1995)
Kaneko, S., see Shimomura 150 (1995) 409 Kimura, S., see lida 150 (1995)
Kang, T.W., see Oh 150 (1995) 256 Kimura, T and C Yamada, In-situ second
Karpov, S.Yu., see Chaly 150 (1995) 1350 harmonic generation study of the molec-
Kasahara, K.., see Saito 150 (1995) 1318 ular beam epitaxy growth of GaAs 150 (1995)
Kasai, K.., see Maeda 150 (1995) 649 Kimura, Y., see Nakagawa 150 (1995)
Kasatani, H., see Yoneda 150 (1995) 1090 Kinniburgh, M., see Ohtani 150 (1995)
Kashima, H., see Mozume 150 (1995) 591 Kishino, K., see Ichimura 150 (1995)
Kasper, E., Prospects of SiGe heterodevices 150 (1995) 921 Kishino, K., see Kikuchi 150 (1995)
Kastrup, J., see Jahn 150 (1995) 43 Kitabayashi, H. and T. Waho, Atomic force
Katayama, T., see Akinaga 150 (1995) 1144 microscope observation of the initial stage
Katayama, Y., see Morishita 150 (1995) 110 of InAs growth on GaAs substrates 150 (1995)
Katayama, Y., see Nomura 150 (1995) 332 Kitada, H., see Shimizu 150 (1995)
Katayama, Y., see Goto 150 (1995) 568 Kitada, T., A. Wakejima, N. Tomita, S. Shi-
Kawabe, M., Selective growth and other ap- momura, A. Adachi, N. Sano and §
plications of hydrogen-assisted molecular Hiyamizu, Preferential migration of in
beam epitaxy 150 (1995) 370 dium atoms on the (411)A plane in In
Kawabe, M., see Chun 150 (1995) 497 GaAs grown on GaAs channeled sub-
Kawabe, M., see Ohta 150 (1995) 661 strates by molecular beam epitaxy 150 (1995)
Kawabe, M., see Ishibashi 150 (1995) 1094 Kitani, K.., see Yoneta 150 (1995)
Kawaguchi, K.., see Pindoria 150 (1995) 1080 Kitani, T., see Zaima 150 (1995)
Kawaguchi, T.., see Sato 150 (1995) 508 Klein, W., see ROhr 150 (1995)
Author index
Klein, W., G. Bohm, H. Heiss, S. Kraus, D ing procedure using hydrogen radicals for
Xu, R. Semerad, G. Trankle and G molecular beam epitaxy regrowth 150 (1995) 18
Weimann, Molecular beam epitaxial Kiinzel, H., J. Béttcher, A. Hase, S. Strahle
growth of pseudomorphic InAlAs/In and E. Kohn, Optimized molecular beam
GaAs high electron mobility transistors epitaxial growth temperature profile for
with high cut-off frequencies 150 (1995) 1252 high-performance AllnAs/GalnAs sin
Kobashi, H., see Yoneta 150 (1995) 817 gle quantum well high electron mobility
Kobayashi, K.., see Tanaka 150 (1995) 1211 transistor structures 150 (1995) 1241
Kobayashi, N.., see Uwai 150 (1995) 101 Kiinzel, H., J. Bottcher, A. Hase, V. Hofsass,
Koguchi, N., see Tsukamoto 150 (1995) 33 C. Kaden and H. Schweizer, Molecular
Kohn, E , see Kiinzel 150 (1995) 1241 beam epitaxy growth of lattice-matched
Koidl, P., see Schmitz 150 (1995) 858 AlGalnAs/GalnAs multiple quantum
Kojima, N., K. Sato, M. Budiman, A. Ya- well distributed feedback laser structures
mada, M. Konagai, K. Takahashi, Y with gratings defined by implantation en-
Nakamura and O. Nittono, Molecular hanced intermixing 150 (1995) 1323
beam epitaxial growth and characteriza- Kurafuji, T., see Niki 150 (1995) 1201
tion of epitaxial GaSe films on (001)GaAs 150 (1995) Kuramoto, M., see Ichimura 150 (1995) 812
Kolodziejski, L.A.., see Fisher 150 (1995) Kurata, H., see Yoshimoto 150 (1995) 241
Koma, A., see Ueno 150 (1995) Kuriyama, Y , see lizuka 150 (1995) 1297
Konagai, M., see Shirakashi 150 (1995) Kurz, H., see Brunner 150 (1995) 1060
Konagai, M., see Kojima 150 (1995) Kuze, N., see Moriyasu 150 (1995) 916
Konkar, A., K.C. Rajkumar, O. Xie, P. Chen, Kuze, N., K. Nagase, S.M uramatsu, S. Miya,
A. Madhukar, H.T. Lin and D.H. Rich, I. Iwabuchi, A. Ichii and I. Shibasaki,
In-situ fabrication of three-dimension- InAs deep quantum well structures and
ally confined GaAs and InAs volumes their application to Hall elements 150 (1995) 1307
via growth on non-planar patterned
GaAs(001) substrates 150 (1995) Lacey, G., see Whitehouse 150 (1995) R5
Konkar, A.., see Xie 150 (1995) acklison, D.E., see Foxon 150 (1995) 892
Konkar, A., see Hasenberg 150 (1995) ai, J.-T. and J.Y. Lee, Enhanced electron
Koppensteiner, E., see Darhuber 150 (1995) transfer in real-space transfer devices us-
Kosaka, H., see Saito 150 (1995) ing strained In Ga, _, As (x = 0.15, 0.25)
Koshiba, S., T. Noda, H. Noge, Y. Naka channel layers 150 (1995) 1379
mura, H. Ichinose, T. Shitara, D.D. Vve- andwehr, G., see Behr 150 (1995) 743
densky and H. Sakaki, Control of ridge ane, P.A., see Freer 150 (1995) 539
shape for the formation of nanometer arkin, 1.A., see Holland 150 (1995) 1215
scale GaAs ridge quantum wires by aruelle, F., see Etienne 150 (1995) 336
molecular beam epitaxy 150 (1995) 379 Lebouché, N , see Gerard 150 (1995) 351
Kost, A.R., see Hasenberg 150 (1995) 1368 Lee, D., see Freer 150 (1995) 539
Koster, T., see Brunner 150 (1995) 1060 Lee, E.-H see Ro 150 (1995) 627
Kostial, H., see Daweritz 150 (1995) 214 Lee, H., see Oberman 150 (1995) 912
Kratzer, H., see Rohr 150 (1995) 306 Lee, H., P.K. York, RJ. Menna, R.U Mar
Kraus, S., see Klein 150 (1995) 125? tinelli, D. Garbuzov and S.Y. Narayan,
Kroemer, H., see Makimoto 150 (1995) 8&3 2.78 um InGaAsSb AlGaAsSb multiple
Kudo, M., see Mishima 150 (1995) 1200 quantum-well lasers with metastable In
Kudo, M., T. Mishima and M. Washima, GaAsSb wells grown by molecular beam
Highly strained InGaAs layers on GaAs epitaxy 150 (1995) 1354
grown by molecular beam epitaxy for high Lee H.K., see Oh 150 (1995) 256
electron mobility transistors 150 (1995) 12% Lee . JJ., see Oh 150 (1995) 256
Kukimoto, H., see Watanabe 150 (1995) 612 l ee J.Y., see Lee 150 (1995) 974
Kukimoto, H., see Hara 150 (1995) 795 Lee, J.Y., see Lee 150 (1995) 999
Kumagai, Y., K. Ishimoto, R. Mori and F Lee, J.Y., see Lai 150 (1995) 1379
Hasegawa, Temperature dependence of a. £¥ and S.J. Yun, Phase
l ec, I ee
boron surface segregation in Si molecular transformation of crystallinity of Si, ,
beam epitaxial growth on the Si(111) y3 Ge, layers grown on Si(001) by low tem-
x ¥3 B surface 150 (1995) perature molecular beam epitaxy 150 (1995) 974
Kiinzel, H., R. Bochnia, J Boéttcher, P Lee, S.-C., S.J. Yun and J.Y. Lee, The effect
Harde, A. Hase and U Griebenow, In- of in situ boron doping on the strain
situ Alp »sGag >4INg5As surface clean- relaxation of Si g.Ge,,:B/Si hetero-
1404 Author index
structure grown by molecular beam epi Long, A.R., see Holland 150 (1995) 1215
taxy 150 (1995) 999 Lopez, M. and Y. Nomura, Surface diffusion
Lefebvre, J., see Gérard 150 (1995) 351 length of Ga adatoms in molecular-beam
Legay, P., F. Alexandre, J.L. Benchimol and epitaxy on GaAs(100)-(110) facet struc
J.C. Harmand, Dependence of InP and tures 150 (1995)
GaAs chemical beam epitaxial growth Lu, H., see Zhang 150 (1995)
rate on substrate orientations; applica- Lu, X., see Zhang 150 (1995)
tions to selective area epitaxy 150 (1995) Lunn, B., see Whitehouse 150 (1995)
Leibenguth, R.E , see Wegscheider 150 (1995)
Lelarge, F.., see Etienne 150 (1995)
Leung, K.T., see Orme 150 (1995) Machida, H., see Sato 150 (1995) 734
Leung, K.T., see Wassermeier 150 (1995) Machimura, H., see Hara 150 (1995) 725
Leys, M.R., R.T.H. Rongen, J. Hopkins, H Madhukar, A., see Viswanathan 150 (1995) 190
Vonk, C.M. van Es, J.H. Wolter and F.D Madhukar, A.., see Konkar 150 (1995) 311
Tichelaar, Growth of Ga,In, _As/InP Madhukar, A.., see Xie 150 (1995) 357
thin layer structures by chemical beam Madhukar, A.., see Hasenberg 150 (1995) 1368
epitaxy 150 (1995) Maeda, F., see Watanabe 150 (1995) 863
, A.Z., J.Q. Zhong, Y.L. Zheng, J.X. Wang, Maeda, F., Y. Watanabe and M. Oshima,
G.P. Ru, W.G. Bi and M. Qi, Molecular Initial Stages of Ag growth on Sb
beam epitaxial growth, characterization terminated GaAs(001) 150 (1995)
and performance of high-detectivity Maeda, H., see Nakayama 150 (1995)
GalnAsSb/GaSb PIN detectors operat Maeda, H., S. Watatani, H. Nakayama and
ing at 2.0 to 2.6 um 150 (1995) T. Nishino, Selective growth of micro
, N.Y., H.K. Dong, C.W Tu and M. Geva, GaAs dots on Si by molecular beam epi
p-Type GaAs doped by diiodomethane taxy 150 (1995)
(CI,H.) in molecular beam epitaxy, met Maeda, T., H. Tanaka, M. Takikawa and K
alorganic molecular beam epitaxy, and Kasai, Effect of the AlAs surface recon
chemical beam epitaxy 150 (1995) Struction on properties of Ge grown on
, N.Y., Y.M. Hsin, H.K. Dong, T. Naka AlAs 150 (1995) 649
mura, P.M. Asbeck and C.W. Tu, Selec Maehashi _ = see Takeuchi 150 (1995) 44]
tively regrown carbon-doped (Al)GaAs by Maemura \ be see Matsumura 150 (1995) 755
chemical beam epitaxy with novel gas Maeyama, S., see Sugiyama 150 (1995) 1098
sources 150 (1995) Maeyama, S.., see Heun 150 (1995) 1108
R.-G., Z.-G. Wang, J.-B. Liang, G.-B Maeyama » whe M. Sugiyama, S. Heun and M
Ren, T.-W. Fan and L.-Y. Lin, Backgat- Oshima, X-ray absorption fine structure
ing and light sensitivity in GaAs metal studies of sulfur interlayers in molecular
semiconductor field effect transitors 150 (1995) 1270 beam epitaxy grown SrF,/S/GaAs(111) 150 (1995) 1122
Li, S.H., see Malik 150 (1995) 984 Magnanini, R.., see Bosacchi 150 (1995) 844
Liang, J.-B., see Li 150 (1995) 1270 Maier, M., see Daweritz 150 (1995) 214
Lightowers, E.C., see Higgs 150 (1995) 1070 Maier, M., see Mazuelas 150 (1995) 251
Lin, H.T., see Konkar 150 (1995) 311 Makimoto, T., B. Brar and H Kroemer,
Lin, H.Y., see Chin 150 (1995) 436 Hole accumulation in (In)GaSb/AISb
Lin, L.-¥ , see Li 150 (1995) 1270 quantum wells induced by the Fermi-level
Lin, S.-B., see Tseng 150 (1995) 1206 pinning of an InAs surface 150 (1995)
Liu, X.F., see Marx 150 (1995) 551 Makita, K., see Gomyo 150 (1995)
Liu, X.F., see Iwata 150 (1995) R33 Makita, K., A Gomyo and I. Hino, Gas
Liu, X.F., see Yamamoto 150 (1995) R53 source molecular beam epitaxy grown In
Liu, X.F., see Marx 150 (1995) 874 GaAsP /InGaAlAs multi-quantum well
Liu, Y., N. Yamamoto, Y. Nishimoto, N structures with wide range continuum
Kamikubo, S$. Shimomura, K. Gamo, K band-offset control 150 (1995) 579
Murase, N. Sano, A. Adachi, K. Fujita, Makita, Y , see lida 150 (1995) 236
T. Watanabe and § Hiyamizu, In, Makita, Y., see Shioda 150 (1995) 1196
Ga,_,As/GaAs quantum wire struc- Makita, Y., see Niki 150 (1995) 1201
tures grown on GaAs (100) patterned Malik, R., E. Gulari, S.H Li, P.K. Bhatta
substrates with [100] ridges 150 (1995) 299 charya and J Singh, Low temperature
Lomascolo, M., see Calcagnile 150 (1995) 712 silicon epitaxy using supersonic molecu
Lomascolo, M., see Vanzetti 150 (1995) 765 lar beams 150 (1995) 984
Long, A.R., see McElhinney 150 (1995) 266 Marheineke, B., see Popp 150 (1995) 528