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Journal of Crystal Growth 1994: Vol 141 Index PDF

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JOURNAL OF CRYSTAL GROWTH | ELSEVIER Journal of Crystal Growth 141 (1994) 487-491 Author index Aanegola, S.K., see McCann 141 (1994) 376 Caulet, J., see Contour 141 (1994) 141 Adachi, G., see Imanaka 141 (1994) 150 Chen, H., see Tan 141 (1994) 393 Akamatsu, B., see Lamare 141 (1994) 347 Chernov, A.A., see Coriell 141 (1994) 219 Alexandre, F., see Lamare 141 (1994) 347 Chu, Y.M., see Duan 141 (1994) 103 Anayama, C., see Kondo 141 (1994) 1 Chung, S.M., see Lee 141 (1994) 209 Anzai, H., T. Itoh, N. Kinoshita, K. Honda, Clydesdale, G., K.J. Roberts, K. Lewtas and M. Tokumoto and T. Uchida, The effect R. Docherty, Modelling the morphology of guest molecules on the crystal growth of molecular crystals in the presence of of the organic superconductor x-(BEDT- blocking tailor-made additives 141 (1994) 443 TTF),Cu(NCS), 141 (19941)1 9 Contour, J.P., D. Ravelosona, C. Sant, C. Arivuoli, D., see Krishnamurthy 141 (19943)7 1 Frétigny, C. Dolin, J. Rioux, P. Auvray Asaeda, M., see Kitamura 141 (19941)9 3 and J. Caulet, Homoepitaxial growth of Asai, S., see Okajima 141 (19943)5 7 low roughness SrTiO, by pulsed laser Assmus, W., see Romer 141 (19941)5 9 deposition: application to YBa,Cu, Auvray, P., see Contour 141 (19941)4 1 O,_,-based thin films and superlattices 141 (1994) 141 Ayers, W., see Menna 141 (19943)1 0 Coriell, S.R., see Lee 141 (1994) 209 Coriell, S.R., B.T. Murray and A.A. Cher- Badaud, J.P., see Coupat 141 (1994) 465 nov, Kinetic self-stabilization of a stepped Baldus, A., A. Bett, O.V. Sulima and W. interface: binary alloy solidification 141 (1994) 219 Wettling, Hybrid molecular beam epi- Coupat, B., J.P. Badaud, J.P. Fournier, S. taxy / low-temperature liquid phase epi- Er-Raji, R. Cadoret and A. Magnan, In- taxy growth of GaAs (AlGaAs) layers on teractions between growth kinetics and Si 141 (19943)1 5 physical vapour transport of Hgl, in mi- Banazadeh, M., see Kriebel 141 (19941)2 4 crogravity 141 (1994) 465 Batur, C., see Kasparian 141 (19944)5 5 Croll, A., see Tegetmeier 141 (1994) 451 Bauser, E., see Gustafsson 141 (19943)6 3 Curelaru, I.M., see Jang 141 (1994) 399 Becker, U., see Grin 141 (1994) 68 Becker, U., see Giessen 141 (1994) 75 Ben Hadid, H., see Kaddeche 141 (19942)7 9 Dabkowska, H., see Imanaka 141 (19941)5 0 Benchimol, J.L., see Lamare 141 (19943)4 7 Dabkowski, A., see Imanaka 141 (19941)5 0 Benz, K.W., see Laasch 141 (1994) 81 Davis, R.F., see Sitar 141 (1994) 11 Benz, K.W., see Tegetmeier 141 (19944)5 1 De Boer, S., see Van Driel 141 (19944)0 4 Bett, A., see Baldus 141 (19943)1 5 Demczyk, B.G., see Bretz 141 (19943)0 4 Bhat, H.L., see Dutta 141 (1994) 44 Docherty, R., see Clydesdale 141 (19944)4 3 Bhat, H.L., see Dutta 141 (19944)7 6 Dolin, C., see Contour 141 (19941)4 1 Bilger, G., see Fischer 141 (1994) 93 Duan, X.F., K.K. Fung and Y.M. Chu, Esti- Blakemore, J.S., see Nordquist 141 (19943)4 3 mation of the strain state of Ge Si, _,/ Si Bogdanov, S., see Giessen 141 (1994) 75 strained-layer superlattices by double- Braden, M., see Kriebel 141 (19941)2 4 crystal X-ray diffraction 141 (1994) 103 Bretz, M., B.G. Demcezyk and L. Zhang, Dutta, P.S., K.S. Sangunni, H.L. Bhat and V. Structural imaging of a thick-walled car- Kumar, Growth of gallium antimonide by bon microtubule 141 (1994) 304 vertical Bridgman technique with planar crystal—melt interface 141 (1994) 44 Cadoret, R., see Coupat 141 (1994) 465 Dutta, P.S., K.S. Sangunni, H.L. Bhat and V. Capewell, D.R., see Menna 141 (1994) 310 Kumar, Experimental determination of 488 Author index / Journal of Crystal Growth 141 (1994) 487-491 melt—solid interface shapes and actual Hammonds, M.C., see Fredericks 141 (1994) 183 growth rates of gallium antimonide grown Han, Z.Y., S.F. Yoon and K. Radhakrish- by vertical Bridgman method 141 (1994) 476 nan, Electrical characteristics of GaAs-— Duval, W.M.B., see Kasparian 141 (1994) 455 Alp 33Gaoe7As tunnelling structures grown by molecular beam epitaxy 141 (1994) 51 Erné, B., see Weyher 141 (1994) 57 Hansson, P.O., see Gustafsson 141 (19943)6 3 Er-Raji, S., see Coupat 141 (1994) 465 Harano, Y., see Hirokawa 141 (19942)0 0 Harris, Jr., J.S., see Kim 141 (1994) 37 Fischer, F., A. Waag, G. Bilger, Th. Litz, S. Hasegawa, M., see Jang 141 (19941)5 3 Scholl, M. Schmitt and G. Landwehr, Hatano, M., see Folsch 141 (19942)5 6 Molecular beam epitaxy of iodine-doped Hayashi, T., see Folsch 141 (19942)5 6 CdTe and (CdMg)Te 141 (1994) 93 He Youping, Su Genbo, Yiu Guiming, Folsch, S., T. Maruno, A. Yamashita, T. Huang Xiangjin and Jang Rihong, Hayashi, M. Tomita, H. Konami and M. Growth and characterization of a new Hatano, Crystallographic structure of the organic nonlinear optical crystal: 1-(3- novel metallophthalocyanine derivative thienyl)-3-(4-chlorophenyl)-propene-1-one 141 (19943)8 9 2,3 : 12,13-dibenzophthalocyaninato—Zn(I]) 141 (1994) 256 Henry, D., see Kaddeche 141 (19942)7 9 Fornari, R., see Weyher 141 (1994) 57 Henry, R.L., see Nordquist 141 (19943)4 3 Fournier, J.P., see Coupat 141 (1994) 465 Hentschel, M.P., see Jang 141 (19943)9 9 Franks, L.A., see Monchamp 141 (1994) 178 Hetterich, M., see Griin 141 (1994) 68 Fredericks, W.J.. M.C. Hammonds, S.B. Hirano, M., see Murata 141 (1994) 29 Howard and F. Rosenberger, Density, Hirokawa, N., M. Ueda and Y. Harano, thermal expansivity, viscosity and refrac- Polymorphic transition of solid-fats dis- tive index of lysozyme solutions at crystal persed systems — its characterization by a growth concentrations 141 (19941)8 3 novel method and scanning electron mi- Freitag, B., see Kriebel 141 (19941)2 4 croscopy observation 141 (1994) 200 Frétigny, C., see Contour 141 (19941)4 1 Honda, K., see Anzai 141 (1994) 119 Fujii, M., see Iwanaga 141 (19942)3 4 Hoshikawa, K., see Okano 141 (1994) 383 Fujii, N., see Mihashi 141 (1994) 22 Howard, S.B., see Fredericks 141 (1994) 183 Fujimoto, H., see Nishio 141 (19942)4 9 Hua, S.Z., L. Salamanca-Riba, M. Wuttig Fukada, T., see Okano 141 (19943)8 3 and P.K. Soltani, Microstructural studies Funahashi, R., see Matsubara 141 (19941)3 1 of photoluminescent thin films of SrS: Fung, K.K., see Duan 141 (19941)0 3 Eu2 + Sm?* 141 (1994) 165 Furukawa, H., see Kitamura 141 (19941)9 3 Huang Xiangjin, see He 141 (1994) 389 Furukawa, Y., see Shinohara 141 (19943)5 2 Giessen, H., see Grin 141 (1994) 68 Ichihara, M., see Iwanaga 141 (1994) 234 Giessen, H., U. Becker, W. Langbein, S. Iga, R., see Sugiura 141 (1994) 299 Bogdanov, H. Kalt, M. Griin and C. Imanaka, N., G. Adachi, H. Dabkowska, A. Klingshirn, Wurtzite-type CdS and CdSe Dabkowski and J.E. Greedan, Flux epitaxial layers. II. Nonlinear optical growth of Y,Cu,O, single crystals 141 (1994) 150 properties 141 (1994) 75 Ishihara, T., see Murata 141 (1994) 29 Gopalakrishnan, R., see Krishnamurthy 141 (1994) 371 Itoh, T., see Anzai 141 (1994) 119 Gorman, R.J., see Nordquist 141 (1994) 343 Iwanaga, H., M. Fujii, M. Ichihara and S. Gorog, T., see Weyher 141 (1994) 57 Takeuchi, Some evidence for the octa- Greedan, J.E., see Imanaka 141 (1994) 150 twin model of tetrapod ZnO particles 141 (1994) 234 Grin, M., M. Hetterich, U. Becker, H. Giessen and C. Klingshirn, Wurtzite-type CdS and CdSe epitaxial layers. I. Growth and characterization 141 (1994) 68 Jang, G.E., 1M. Curelaru) and M._.P. Grin, M., see Giessen 141 (1994) 75 Hentschel, Growth and characterization Gustafsson, A., P.O. Hansson and E. Bauser, of large single crystals of the intermetal- Cathodoluminescence from relaxed Ga,- lic compound Li-Ga (Zint1) 141 (1994) 399 Si,;_, grown by heteroepitaxial lateral Jang Rihong, see He 141 (1994) 389 overgrowth 141 (1994) 363 Jang, W.-J., M. Hasegawa, T.R. Zhao, H. Takei, M. Tamura and M. Kinoshita, Halaj, J., Growth-rate-independent dopant Growth, structure and properties of transport in silicon epitaxy 141 (1994) 98 Y,Cu,O, single crystals 141 (1994) 153 Author index / Journal of Crystal Growth 141 (1994) 487-49] 489 Johansen, T.H., An improved analytical ex- Komatsu, H., see Miyashita 141 (1994) 419 pression for the meniscus height in Konami, H., see F6lsch 141 (1994) 256 Czochralski growth 141 (1994) 484 Kondo, M., C. Anayama, H. Sekiguchi and Juhel, M., see Lamare 141 (1994) 347 T. Tanahashi, Mg-doping transients dur- ing metalorganic vapor phase epitaxy of GaAs and AlGaInP 141 (1994) 1 Kaddeche, S., H. Ben Hadid and D. Henry, Krasnov, A.N., Energy of formation of Li Macrosegregation and convection in the defects in ZnSe deposited by molecular horizontal Bridgman configuration. II. beam epitaxy 141 (1994) 89 Concentrated alloys 141 (1994) 279 Kriebel, Cl., M. Banazadeh, G. Winkel, N. Kalt, H., see Giessen 141 (1994) 75 Knauf, B. Roden, M. Braden and B. Kaneno, N., see Mihashi 141 (1994) 22 Freitag, Crystal growth, separation and Kang, M.S., see Lee 141 (1994) 209 characterization of superconducting Pb, Kasparian, V., C. Batur, W.M.B. Duval, B.N. Sr(Y,_,Ca,)Cu;,0g,5 141 (1994) 124 Rosenthal and N.B. Singh, Application Krishnamurthy, D., R. Gopalakrishnan, D. of stereo imaging for recognition of crys- Arivuoli and P. Ramasamy, Growth of tal surface shapes 141 (1994) 455 oxide crystals: effect of change in melt Kataoka, M., K. Kuroda, T. Takami, K. Ko- depth 141 (1994) 371 jima and M. Nunoshita, Experimental ev- Kumar, V., see Dutta 141 (1994) 44 idence of a designed interface structure Kumar, V., see Dutta 141 (1994) 476 model in a highly mismatched system of Kuroda, K., see Kataoka 141 (1994) 479 (001) Bi-Sr—Ca—Cu-O superconducting Kirten, M. and J. Schilz, Polycrystalline wet- films on (001) gadolinium gallium garnet ting layer on Czochralski single crystals substrates 141 (1994) 479 of strongly segregating systems 141 (1994) 473 Kawai, T., see Matsubara 141 (1994) 131 Kelly, J.J., see Weyher 141 (1994) 57 Kim, C.K., see Kim 141 (1994) 324 Laasch, M., R. Schwarz, P. Rudolph and Kim, M.-S., see Kim 141 (1994) 324 K.W. Benz, CdTe crystal growth by a Kim, S.-D., H. Lee and J.S. Harris, Jr., sublimation traveling heater method 141 (1994) 81 Molecular beam epitaxial growth of Lacmann, R., see Kipp 141 (1994) 291 Ing ¢sGag35As quantum wells on GaAs Lamare, B., J.L. Benchimol, M. Juhel, B. substrates for 1.5 wm exciton resonance 141 (1994) 37 Akamatsu, P. Legay and F. Alexandre, Kim, S.-I., Y. Kim, M.-S. Kim, C.K. Kim, High carbon doping of GaAs using tris- S.-K. Min and G. Lee, Carbon doping dimethylaminoarsenic and trimethylgal- characteristics of GaAs and Al, ,;Gay 7As lium in chemical beam epitaxy 141 (1994) 347 grown by atmospheric pressure metalor- Lan, C.W., Heat transfer, fluid flow, and ganic chemical vapor deposition using interface shapes in the floating-zone CCl, 141 (1994) 324 growth of tube crystals 141 (19942)6 5 Kim, Y., see Kim 141 (1994) 324 Landwehr, G., see Fischer 141 (1994) 93 Kinoshita, M., see Jang 141 (1994) 153 Langbein, W., see Giessen 141 (1994) 75 Kinoshita, N., see Anzai 141 (1994) 119 Lee, B.J., see Lee 141 (19942)0 9 Kipp, S., R. Lacmann and M.A. Schneeweis, Lee, C., see Kim 141 (19943)2 4 Methods and apparatus for in situ inves- Lee, H., see Kim 141 (1994) 37 tigations with the scanning force micro- Lee, Z.H., B.J. Lee, M.S. Kang, $S.M. Chung scope 141 (1994) 291 and S.R. Coriell, Experimental investiga- Kitamura, M., H. Furukawa and M. Asaeda, tion of convection during vertical Bridg- Solvent effect of ethanol on crystalliza- man growth of dilute Al-Mg alloys 141 (19942)0 9 tion and growth process of L-histidine Legay, P., see Lamare 141 (19943)4 7 polymorphs 141 (1994) 193 Lewtas, K., see Clydesdale 141 (19944)4 3 Kitazawa, M., M. Takahashi and M. Mat- Lin, S., see Tan 141 (19943)9 3 suoka, Growth behavior of L-pyrroli- Litz, Th., see Fischer 141 (1994) 93 done-2-carboxylic acid (L-PCA) single Lu, S., see Tan 141 (19943)9 3 crystals 141 (19944)2 5 Luther, K.-D., see ROmer 141 (19941)5 9 Kito, M., see Murata 141 (1994) 29 Lyutovich, K.L., see Vdovin 141 (19941)0 9 Klingshirn, C., see Grin 141 (1994) 68 Klingshirn, C., see Giessen 141 (1994) 75 Knauf, N., see Kriebel 141 (19941)2 4 Magnan, A., see Coupat 141 (1994) 465 Kojima, K., see Kataoka 141 (19944)7 9 Mao, H., see Tan 141 (1994) 393 490 Author index / Journal of Crystal Growth 141 (1994) 487-491 Markov, I. and A. Trayanov, Formation of Ogawa, T., see Tan 141 (1994) 393 cracks in epitaxial overlayers 141 (1994) 239 Ogura, T., see Matsubara 141 (1994) 131 Martinelli, R.U., see Menna 141 (1994) 310 Okajima, Y., S. Asai, Y. Terui, R. Terasaki Maruno, T., see Félsch 141 (1994) 256 and H. Murata, Precise control of growth Matsubara, I., R. Funahashi, T. Ogura, H. site of silicon vapor—liquid-—solid crystals 141 (1994) 357 Yamashita, K. Tsuru and T. Kawai, Okano, Y., Y. Tsuji, D.H. Yoon, K. Growth mechanism of Bi,Sr,CaCu,O, Hoshikawa and T. Fukada, Internal ra- superconducting whiskers 141 (1994) 131 diative heat transfer in Czochralski Matsuoka, M., see Kitazawa 141 (1994) 425 growth of LiTaO, single crystal 141 (1994) 383 McCann, P.J. and S.K. Aanegola, The role Olsen, G., see Menna 141 (1994) 310 of graphite boat design in liquid phase epitaxial growth of PbSe,7.Te,> . on Palmer, J., see Menna 141 (1994) 310 BaF, 141 (1994) 376 Pollert, E., see Nevriva 141 (1994) 175 Menna, R.J., D.R. Capewell, R.U. Mar- tinelli, W. Ayers, R. Moulton, J. Palmer and G. Olsen, Epitaxial growth of Radhakrishnan, K., see Han 141 (1994) 51 InP» ggSbp ;> using a stibine generator 141 (1994) 310 Radhakrishnan, S., Polymer induced crystal- Mihalik, G.B., see Monchamp 141 (1994) 178 lization. III. PEO—CdCl, and in situ for- Mihashi, Y., M. Miyashita, N. Kaneno, M. mation of PEO-—CdS composite 141 (19944)3 7 Tsugami, N. Fujii, S. Takamiya and S. Ramasamy, P., see Krishnamurthy 141 (19943)7 1 Mitsui, Influence of oxygen on the Ravelosona, D., see Contour 141 (19941)4 1 threshold current of AlGaAs multiple Rioux, J., see Contour 141 (19941)4 1 quantum well lasers grown by metalor- Roberts, K.J., see Clydesdale 141 (19944)4 3 ganic chemical vapor deposition 141 (1994) 22 Roden, B., see Kriebel 141 (19941)2 4 Mil’vidskii, M.G., see Vdovin 141 (19941)0 9 Romer, H., K.-D. Luther and W. Assmus, Min, S.-K., see Kim 141 (19943)2 4 The distribution coefficients of rare earth Mitsuhara, M., see Sugiura 141 (19942)9 9 ions in cubic zirconium dioxide 141 (1994) 159 Mitsui, S., see Mihashi 141 (1994) 22 Rosenberger, F., see Fredericks 141 (1994) 183 Miyashita, M., see Mihashi 141 (1994) 22 Rosenthal, B.N., see Kasparian 141 (1994) 455 Miyashita, S., H. Komatsu, Y. Suzuki and T. Rudolph, P., see Laasch 141 (1994) 81 Nakada, Observation of the concentra- tion distribution around a_ growing Saban, S.B., see Nordquist 141 (19943)4 3 lysozyme crystal 141 (1994) 419 Saidov, S.M., see Vdovin 141 (19941)0 9 Monchamp, R.R., G.B. Mihalik and L.A. Saitoh, T., see Yodo 141 (19943)3 1 Franks, On the nature of striae in stron- Salamanca-Riba, L., see Hua 141 (19941)6 5 tium barium niobate 141 (1994) 178 Sangunni, K.S., see Dutta 141 (1994) 44 Moulton, R., see Menna 141 (1994) 310 Sangunni, K.S., see Dutta 141 (19944)7 6 Murata, H., see Okajima 141 (1994) 357 Sant, C., see Contour 141 (19941)4 1 Murata, K., T. Ishihara, M. Sato, N. Kito Sato, M., see Murata 141 (1994) 29 and M. Hirano, <(100) Oriented GaAs Schilz, J., see Kiirten 141 (19944)7 3 single crystals grown by boat method 141 (1994) 29 Schmitt, M., see Fischer 141 (1994) 93 Murray, B.T., see Coriell 141 (1994) 219 Schneeweis, M.A., see Kipp 141 (19942)9 1 Scholl, S., see Fischer 141 (1994) 93 Schwarz, R., see Laasch 141 (1994) 81 Nakada, T., see Miyashita 141 (1994) 419 Sekiguchi, H., see Kondo 141 (1994) 1 Nevriva, M. and E. Pollert, Phase diagram of Shinohara, M., Nugraha, Y. Noda and Y. the CuO-Bi,SrO, pseudobinary system 141 (1994) 175 Furukawa, Hg-loss compensation and Nishio, J. and H. Fujimoto, Theoretical anal- wiping-off of source liquid on slider liq- ysis for the segregation in the liquid en- uid phase epitaxy of Hg, _,Cd,Te 141 (1994) 352 capsulated Czochralski system 141 (1994) 249 Singh, N.B., see Kasparian 141 (1994) 455 Noda, Y., see Shinohara 141 (1994) 352 Sitar, Z., L.L. Smith and R.F. Davis, Inter- Nordquist, Jr., P.E.R., R.L. Henry, J.S. face chemistry and surface morphology in Blakemore, S.B. Saban and R.J. Gorman, the initial stages of GaN and AIN on Annealing of GaAs grown by vertical a-SiC and sapphire 141 (1994) 11 zone melting 141 (1994) 343 Smith, L.L., see Sitar 141 (1994) 11 Nugraha, see Shinohara 141 (1994) 352 Soltani, P.K., see Hua 141 (1994) 165 Nunoshita, M., see Kataoka 141 (1994) 479 Su Genbo, see He 141 (1994) 389 Author index / Journal of Crystal Growth 141 (1994) 487-491 491 Sugiura, H., M. Mitsuhara, R. Iga and Van der Heijden, A.E.D.M., see Van Driel 141 (1994) 404 N. Yamamoto, Metalorganic molecular Van Driel, C.A., A.E.D.M. van der Heijden, beam epitaxial growth of highly uniform S. de Boer and G.M. van Rosmalen, The InGaAsP quantum well structures using III-IV phase transition in ammonium ni- an indium-free holder 141 (1994) 299 trate: mechanisms 141 (1994) 404 Sulima, O.V., see Baldus 141 (1994) 315 Van Rosmalen, G.M., see Van Driel 141 (1994) 404 Suzuki, Y., see Miyashita 141 (1994) 419 Vdovin, V.I., M.G. Mil’vidskii, T.G. Yugova, K.L. Lyutovich and S.M. Saidov, Effect Takahashi, M., see Kitazawa 141 (19944)2 5 of alloy composition on defect formation Takami, T., see Kataoka 141 (19944)7 9 in Ge,Si,_,/ Si heterostructures ob- Takamiya, S., see Mihashi 141 (1994) 22 tained by molecular beam epitaxy 141 (1994) 109 Takei, H., see Jang 141 (19941)5 3 Takeuchi, S., see Iwanaga 141 (19942)3 4 Waag, A., see Fischer 141 (1994) 93 Tamura, M., see Jang 141 (19941)5 3 Wettling, W., see Baldus 141 (1994) 315 Tamura, M., see Yodo 141 (19943)3 1 Weyher, J.L., R. Fornari, T. Gorég, J.J. Kelly Tan, Q., H. Mao, S. Lin, H. Chen, S. Lu, D. and B. Erné, HBr—K,Cr,07-H,0 etch- Tang and T. Ogawa, Defects in £B- BaB,O, (BBO) crystals observed by laser ing system for indium phosphide 141 (1994) 57 Winkel, G., see Kriebel 141 (1994) 124 scanning tomography 141 (1994) 393 Wuttig, M., see Hua 141 (1994) 165 Tanahashi, T., see Kondo 141 (1994) 1 Tang, D., see Tan 141 (1994) 393 Tegetmeier, A., A. Croll and K.W. Benz, A Yamamoto, N., see Sugiura 141 (1994) 299 formula describing the temperature de- Yamashita, A., see Félsch 141 (1994) 256 pendence of surface tension for some Yamashita, H., see Matsubara 141 (1994) 131 semiconductor melts 141 (19944)5 1 Yiu Guiming, see He 141 (1994) 389 Terasaki, R., see Okajima 141 (19943)5 7 Yodo, T., M. Tamura and T. Saitoh, Rela- Terui, Y., see Okajima 141 (19943)5 7 tionship between the optical and struc- Tokumoto, M., see Anzai 141 (19941)1 9 tural properties in GaAs heteroepitaxial Tomita, M., see Folsch 141 (19942)5 6 layers grown on Si substrates 141 (1994) 331 Trayanov, A., see Markov 141 (19942)3 9 Yoon, D.H., see Okano 141 (1994) 383 Tsugami, M., see Mihashi 141 (1994) 22 Yoon, S.F., see Han 141 (1994) 51 Tsuji, Y., see Okano 141 (19943)8 3 Yugova, T.G., see Vdovin 141 (1994) 109 Tsuru, K., see Matsubara 141 (19941)3 1 Uchida, T., see Anzai 141 (1994) 119 Zhang, L., see Bretz 141 (1994) 304 Ueda, M., see Hirokawa 141 (1994) 200 Zhao, T.R., see Jang 141 (1994) 153 R(area jouermor GCRRYOSWTTAHL pes ELSEVIER Journal of Crystal Growth 141 (1994) 492-494 Subject index Aluminum by physical methods — gallium arsenide 22, 51, 324 — of lysozyme solutions 183 gallium indium phosphide 1 by scanning force microscopy — magnesium alloy 209 — — of L-ascorbic acid 291 — nitride 11 — — of lithium fluoride 291 — organic 1 — by second harmonic generation Ammonium — — of organic nonlinear optical material 389 — nitrate 404 — by X-ray diffraction Apparatus — — of strain state of GeSi/Si 103 — for miscellaneous purposes Computer simulation — — graphite boat design in liquid phase epitaxy 376 — of horizontal Bridgman solidification 279 — — in situ scanning force microscopy 291 — of morphology of molecular crystals 443 — — luminescent devices, grown by electron beam evapora- — of organic (tubes) by floating zone 265 tion 165 Constitutional supercooling — — stereo imaging of solid—melt interface 455 — of cadmium telluride 81 Arsenic — of germanium-silicon alloy 219 — organic 347 Convection 209, 265, 279 Barium Device characterization — borate, B 393 — diodes 29 Bismuth — electronic materials 81, 93, 315 — germanate 371 — lasers 299 ~ silicate 371 — optoelectronic materials 29, 389, 393, 425 — strontium calcium cuprate 131, 479 — quantum wells 22, 37, 51, 299 Burton—Prim-Slichter theory Diffusional control — for distribution coefficient — of cadmium telluride 81 — — in (cubic) zirconia 159 Diodes, see Device characterization Dislocations Cadmium — in epitaxial overlayers 239 — magnesium telluride 93 Dissolution — mercury telluride 352 — of lysozyme 183 — selenide 68, 75 — sulphide 68, 75, 437 ~ telluride 81. 93 Electronic materials, see Device characterization Carbon 304 Epitaxy, see Thin film growth Characterization Etching — chemical 29, 57, 234, 343, 357, 476 — by cracks Eutectic growth — — of epitaxial overlayers 239 — of silicon—gold 357 by electron microscopy — of solid fats 200 — by liquid permeation Fats — — of solid fats 200 — solid 200 — by photoluminescence — — of aluminum gallium arsenide multi-quantum-well lasers Gallium 22 — antimonide 44, 476 Subject index / Journal of Crystal Growth 141 (1994) 492-494 493 — arsenide 1, 29, 51, 249, 315, 324, 331, 343, 347 — — of germanium-silicon alloy 219 — nitride 11 — — theory of 219 Germanium — by zone melting — silicon 103, 109, 219, 363 — — of gallium arsenide 343 Mercury Heat flow control — cadmium telluride 352 — in Czochralski grown lithium tantalate 383 — (II) iodide 465 L-Histidine 193 Microgravity, growth under Hydrodynamics, see Convection — of mercury (II) iodide 465 Morphological stability Indium — of cadmium sulphide in polymer matrix 437 — gallium arsenide 37 — of germanium-silicon alloy 219 — gallium arsenide phosphide 299 — of L-histidine 193 phosphide 57 phosphide antimonide 310 Naphthalene — biphenyl 443 Kinetics Nonlinear optics, crystals for — of doping in silicon epitaxy 98 — barium borate, B 393 — of growth 193, 219, 419, 425, 465, 476 — organic crystals 389, 425 -— of interface control 209, 473 Nucleation — of dislocations in germanium-silicon 363 — of L-histidine 193 Lasers, see Device characterization Numbers Lasers, crystals for — Grashof 279 — aluminum gallium arsenide 22 — Marangoni 279 — lead selenide telluride 376 — Prandtl 265, 279 Lead — Rayleigh 209 — bromide 455 — Schmidt 279 — cuprate 124 — selenide telluride 376 Lithium Optoelectronic materials, see Device characterization — gallium 399 Organic crystals 256, 443 — tantalate 383 — nonlinear optical material 289, 425 Lysozyme 183, 419 — superconductors 119 Melt growth technique Phase diagrams — by Bridgman-Stockbarger method — of ammonium nitrate 404 — — of aluminum—magnesium alloy 209 — of copper oxide / bismuth strontium oxide 175 — — of gallium antimonide 44, 476 of etchant for indium phosphide 57 — — of gallium arsenide 29 of silicon—gold 357 — — of lead bromide 455 of yttrium oxide / copper oxide 153 — — of lithium—gallium 399 Precursor — theory of 279 — for doping in gallium arsenide 347 — by Czochralski method Purification of materials — — of bismuth germanates 371 — of lysozyme 183 — — of bismuth silicates 371 — — of lithium tantalate 383 Quantum wells, see Device characterization — — of silicon—germanium 473 — — of strontium barium niobate 178 Semiconductor melts 451 — — theory of meniscus height 484 Silicon 98, 265 — — theory of segregation 249 — germanium 473 — by floating zone method Sodium — — theory of 256, 265 — nitrate 265 — by pulling with a gold wire Solid growth technique — — of bismuth strontium cuprate 175 — by polymorphic transformation — by skull melting — — of ammonium nitrate 404 — — of (cubic) zirconia 159 — — of fats, solid 200 — by uniaxial solidification — — of L-histidine 193 494 Subject index / Journal of Crystal Growth 141 (1994) 492-494 Solution growth technique — — of lead selenide telluride 376 — by electrocrystallization — — of mercury cadmium telluride 352 — — of organic superconductor 119 by metalorganic molecular beam epitaxy by flux method — of indium gallium arsenide phosphide 299 of barium borate, B 393 by molecular beam epitaxy of lead cuprate, superconductor 124 — of aluminum gallium arsenide 51 of L-histidine 193 of aluminum nitride 11 of yttrium cuprate 150, 153 of cadmium magnesium telluride 93 by low temperature method of cadmium telluride 93 — of cadmium sulphide in presence of polymer 437 of gallium arsenide 51, 315, 331 — of lysozyme 419 of gallium nitride 11 — of organic crystals 389, 425 of germanium-silicon alloy 109 theory of 443 of indium gallium arsenide 37 Stefan problem or moving boundary problem of organic crystals 256 — of (cubic) zirconium 159 of zinc selenide 89 Strontium by pulsed layer deposition — barium niobate 178 — of yttrium barium cuprate 141 — sulphide 165 by sputtering — titanate 141 — of bismuth strontium calcium cuprate 479 Superconductivity materials, high 7, by vapor phase epitaxy — bulk — through chemical vapor deposition — of lead strontium (yttrium calcium) cuprate 124 — — of silicon 98 film — through metalorganic chemical vapor deposition — of BSCCO 479 — — of aluminum gallium arsenide 22, 324 — of YBCO 141 — — of aluminum gallium indium phosphide 1 whisker — — of gallium arsenide 1, 324 — - of BSCCO 131 — — of indium phosphide antimonide 310 Superconductivity materials, low 7, Twinning — bulk — of zinc oxide 234 — — of organic crystals 119 Superlattices, multilayers Vapor growth technique — of superconductor 141 — by chemical transport — of III-V compounds 51 — — of zinc oxide 234 Surface energy, determination — by evaporation and condensation -— of naphthalene biphenyl 443 — — of cadmium telluride 81 — of semiconductor melts 451 — — of carbon fiber 304 Surface morphology — — of mercury (II) iodide 465 — of gallium antimonide 476 Vapor-liquid-—solid growth Surface structure — of silicon 357 — of carbon microtubule 304 — of naphthalene biphenyl 443 Whisker growth of bismuth strontium calcium cuprate 131 Tellurium of carbon fiber 304 — dioxide 371 of silicon 357 Thin film growth, epitaxy of zinc oxide 234 — by chemical beam epitaxy — — of gallium arsenide 347 Yttrium — by electron beam epitaxy — cuprate 150, 153 — — of strontium sulphide 165 — by hot wall epitaxy Zinc — — of cadmium selenide 68, 75 — oxide 204 — — of cadmium sulphide 68, 75 — selenide 89 by liquid phase epitaxy Zirconia (cubic) 159 — of gallium arsenide 315 Zirconium — of germanium-silicon 363 — dioxide 159

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