Journal of Crystal Growth 1994: Vol 141 Index

9 Pages·1994·2.3 MB·English

JOURNAL OF CRYSTAL
GROWTH
|
ELSEVIER Journal of Crystal Growth 141 (1994) 487-491
Author index
Aanegola, S.K., see McCann 141 (1994) 376 Caulet, J., see Contour 141 (1994) 141
Adachi, G., see Imanaka 141 (1994) 150 Chen, H., see Tan 141 (1994) 393
Akamatsu, B., see Lamare 141 (1994) 347 Chernov, A.A., see Coriell 141 (1994) 219
Alexandre, F., see Lamare 141 (1994) 347 Chu, Y.M., see Duan 141 (1994) 103
Anayama, C., see Kondo 141 (1994) 1 Chung, S.M., see Lee 141 (1994) 209
Anzai, H., T. Itoh, N. Kinoshita, K. Honda, Clydesdale, G., K.J. Roberts, K. Lewtas and
M. Tokumoto and T. Uchida, The effect R. Docherty, Modelling the morphology
of guest molecules on the crystal growth of molecular crystals in the presence of
of the organic superconductor x-(BEDT- blocking tailor-made additives 141 (1994) 443
TTF),Cu(NCS), 141 (19941)1 9 Contour, J.P., D. Ravelosona, C. Sant, C.
Arivuoli, D., see Krishnamurthy 141 (19943)7 1 Frétigny, C. Dolin, J. Rioux, P. Auvray
Asaeda, M., see Kitamura 141 (19941)9 3 and J. Caulet, Homoepitaxial growth of
Asai, S., see Okajima 141 (19943)5 7 low roughness SrTiO, by pulsed laser
Assmus, W., see Romer 141 (19941)5 9 deposition: application to YBa,Cu,
Auvray, P., see Contour 141 (19941)4 1 O,_,-based thin films and superlattices 141 (1994) 141
Ayers, W., see Menna 141 (19943)1 0 Coriell, S.R., see Lee 141 (1994) 209
Coriell, S.R., B.T. Murray and A.A. Cher-
Badaud, J.P., see Coupat 141 (1994) 465 nov, Kinetic self-stabilization of a stepped
Baldus, A., A. Bett, O.V. Sulima and W. interface: binary alloy solidification 141 (1994) 219
Wettling, Hybrid molecular beam epi- Coupat, B., J.P. Badaud, J.P. Fournier, S.
taxy / low-temperature liquid phase epi- Er-Raji, R. Cadoret and A. Magnan, In-
taxy growth of GaAs (AlGaAs) layers on teractions between growth kinetics and
Si 141 (19943)1 5 physical vapour transport of Hgl, in mi-
Banazadeh, M., see Kriebel 141 (19941)2 4 crogravity 141 (1994) 465
Batur, C., see Kasparian 141 (19944)5 5 Croll, A., see Tegetmeier 141 (1994) 451
Bauser, E., see Gustafsson 141 (19943)6 3 Curelaru, I.M., see Jang 141 (1994) 399
Becker, U., see Grin 141 (1994) 68
Becker, U., see Giessen 141 (1994) 75
Ben Hadid, H., see Kaddeche 141 (19942)7 9 Dabkowska, H., see Imanaka 141 (19941)5 0
Benchimol, J.L., see Lamare 141 (19943)4 7 Dabkowski, A., see Imanaka 141 (19941)5 0
Benz, K.W., see Laasch 141 (1994) 81 Davis, R.F., see Sitar 141 (1994) 11
Benz, K.W., see Tegetmeier 141 (19944)5 1 De Boer, S., see Van Driel 141 (19944)0 4
Bett, A., see Baldus 141 (19943)1 5 Demczyk, B.G., see Bretz 141 (19943)0 4
Bhat, H.L., see Dutta 141 (1994) 44 Docherty, R., see Clydesdale 141 (19944)4 3
Bhat, H.L., see Dutta 141 (19944)7 6 Dolin, C., see Contour 141 (19941)4 1
Bilger, G., see Fischer 141 (1994) 93 Duan, X.F., K.K. Fung and Y.M. Chu, Esti-
Blakemore, J.S., see Nordquist 141 (19943)4 3 mation of the strain state of Ge Si, _,/ Si
Bogdanov, S., see Giessen 141 (1994) 75 strained-layer superlattices by double-
Braden, M., see Kriebel 141 (19941)2 4 crystal X-ray diffraction 141 (1994) 103
Bretz, M., B.G. Demcezyk and L. Zhang, Dutta, P.S., K.S. Sangunni, H.L. Bhat and V.
Structural imaging of a thick-walled car- Kumar, Growth of gallium antimonide by
bon microtubule 141 (1994) 304 vertical Bridgman technique with planar
crystal—melt interface 141 (1994) 44
Cadoret, R., see Coupat 141 (1994) 465 Dutta, P.S., K.S. Sangunni, H.L. Bhat and V.
Capewell, D.R., see Menna 141 (1994) 310 Kumar, Experimental determination of
488 Author index / Journal of Crystal Growth 141 (1994) 487-491
melt—solid interface shapes and actual Hammonds, M.C., see Fredericks 141 (1994) 183
growth rates of gallium antimonide grown Han, Z.Y., S.F. Yoon and K. Radhakrish-
by vertical Bridgman method 141 (1994) 476 nan, Electrical characteristics of GaAs-—
Duval, W.M.B., see Kasparian 141 (1994) 455 Alp 33Gaoe7As tunnelling structures
grown by molecular beam epitaxy 141 (1994) 51
Erné, B., see Weyher 141 (1994) 57 Hansson, P.O., see Gustafsson 141 (19943)6 3
Er-Raji, S., see Coupat 141 (1994) 465 Harano, Y., see Hirokawa 141 (19942)0 0
Harris, Jr., J.S., see Kim 141 (1994) 37
Fischer, F., A. Waag, G. Bilger, Th. Litz, S. Hasegawa, M., see Jang 141 (19941)5 3
Scholl, M. Schmitt and G. Landwehr, Hatano, M., see Folsch 141 (19942)5 6
Molecular beam epitaxy of iodine-doped Hayashi, T., see Folsch 141 (19942)5 6
CdTe and (CdMg)Te 141 (1994) 93 He Youping, Su Genbo, Yiu Guiming,
Folsch, S., T. Maruno, A. Yamashita, T. Huang Xiangjin and Jang Rihong,
Hayashi, M. Tomita, H. Konami and M. Growth and characterization of a new
Hatano, Crystallographic structure of the organic nonlinear optical crystal: 1-(3-
novel metallophthalocyanine derivative thienyl)-3-(4-chlorophenyl)-propene-1-one 141 (19943)8 9
2,3 : 12,13-dibenzophthalocyaninato—Zn(I]) 141 (1994) 256 Henry, D., see Kaddeche 141 (19942)7 9
Fornari, R., see Weyher 141 (1994) 57 Henry, R.L., see Nordquist 141 (19943)4 3
Fournier, J.P., see Coupat 141 (1994) 465 Hentschel, M.P., see Jang 141 (19943)9 9
Franks, L.A., see Monchamp 141 (1994) 178 Hetterich, M., see Griin 141 (1994) 68
Fredericks, W.J.. M.C. Hammonds, S.B. Hirano, M., see Murata 141 (1994) 29
Howard and F. Rosenberger, Density, Hirokawa, N., M. Ueda and Y. Harano,
thermal expansivity, viscosity and refrac- Polymorphic transition of solid-fats dis-
tive index of lysozyme solutions at crystal persed systems — its characterization by a
growth concentrations 141 (19941)8 3 novel method and scanning electron mi-
Freitag, B., see Kriebel 141 (19941)2 4 croscopy observation 141 (1994) 200
Frétigny, C., see Contour 141 (19941)4 1 Honda, K., see Anzai 141 (1994) 119
Fujii, M., see Iwanaga 141 (19942)3 4 Hoshikawa, K., see Okano 141 (1994) 383
Fujii, N., see Mihashi 141 (1994) 22 Howard, S.B., see Fredericks 141 (1994) 183
Fujimoto, H., see Nishio 141 (19942)4 9 Hua, S.Z., L. Salamanca-Riba, M. Wuttig
Fukada, T., see Okano 141 (19943)8 3 and P.K. Soltani, Microstructural studies
Funahashi, R., see Matsubara 141 (19941)3 1 of photoluminescent thin films of SrS:
Fung, K.K., see Duan 141 (19941)0 3 Eu2 + Sm?* 141 (1994) 165
Furukawa, H., see Kitamura 141 (19941)9 3 Huang Xiangjin, see He 141 (1994) 389
Furukawa, Y., see Shinohara 141 (19943)5 2
Giessen, H., see Grin 141 (1994) 68
Ichihara, M., see Iwanaga 141 (1994) 234
Giessen, H., U. Becker, W. Langbein, S.
Iga, R., see Sugiura 141 (1994) 299
Bogdanov, H. Kalt, M. Griin and C.
Imanaka, N., G. Adachi, H. Dabkowska, A.
Klingshirn, Wurtzite-type CdS and CdSe
Dabkowski and J.E. Greedan, Flux
epitaxial layers. II. Nonlinear optical
growth of Y,Cu,O, single crystals 141 (1994) 150
properties 141 (1994) 75
Ishihara, T., see Murata 141 (1994) 29
Gopalakrishnan, R., see Krishnamurthy 141 (1994) 371
Itoh, T., see Anzai 141 (1994) 119
Gorman, R.J., see Nordquist 141 (1994) 343
Iwanaga, H., M. Fujii, M. Ichihara and S.
Gorog, T., see Weyher 141 (1994) 57
Takeuchi, Some evidence for the octa-
Greedan, J.E., see Imanaka 141 (1994) 150
twin model of tetrapod ZnO particles 141 (1994) 234
Grin, M., M. Hetterich, U. Becker, H.
Giessen and C. Klingshirn, Wurtzite-type
CdS and CdSe epitaxial layers. I. Growth
and characterization 141 (1994) 68 Jang, G.E., 1M. Curelaru) and M._.P.
Grin, M., see Giessen 141 (1994) 75 Hentschel, Growth and characterization
Gustafsson, A., P.O. Hansson and E. Bauser, of large single crystals of the intermetal-
Cathodoluminescence from relaxed Ga,- lic compound Li-Ga (Zint1) 141 (1994) 399
Si,;_, grown by heteroepitaxial lateral Jang Rihong, see He 141 (1994) 389
overgrowth 141 (1994) 363 Jang, W.-J., M. Hasegawa, T.R. Zhao, H.
Takei, M. Tamura and M. Kinoshita,
Halaj, J., Growth-rate-independent dopant Growth, structure and properties of
transport in silicon epitaxy 141 (1994) 98 Y,Cu,O, single crystals 141 (1994) 153
Author index / Journal of Crystal Growth 141 (1994) 487-49] 489
Johansen, T.H., An improved analytical ex- Komatsu, H., see Miyashita 141 (1994) 419
pression for the meniscus height in Konami, H., see F6lsch 141 (1994) 256
Czochralski growth 141 (1994) 484 Kondo, M., C. Anayama, H. Sekiguchi and
Juhel, M., see Lamare 141 (1994) 347 T. Tanahashi, Mg-doping transients dur-
ing metalorganic vapor phase epitaxy of
GaAs and AlGaInP 141 (1994) 1
Kaddeche, S., H. Ben Hadid and D. Henry,
Krasnov, A.N., Energy of formation of Li
Macrosegregation and convection in the
defects in ZnSe deposited by molecular
horizontal Bridgman configuration. II.
beam epitaxy 141 (1994) 89
Concentrated alloys 141 (1994) 279
Kriebel, Cl., M. Banazadeh, G. Winkel, N.
Kalt, H., see Giessen 141 (1994) 75
Knauf, B. Roden, M. Braden and B.
Kaneno, N., see Mihashi 141 (1994) 22
Freitag, Crystal growth, separation and
Kang, M.S., see Lee 141 (1994) 209
characterization of superconducting Pb,
Kasparian, V., C. Batur, W.M.B. Duval, B.N.
Sr(Y,_,Ca,)Cu;,0g,5 141 (1994) 124
Rosenthal and N.B. Singh, Application
Krishnamurthy, D., R. Gopalakrishnan, D.
of stereo imaging for recognition of crys-
Arivuoli and P. Ramasamy, Growth of
tal surface shapes 141 (1994) 455
oxide crystals: effect of change in melt
Kataoka, M., K. Kuroda, T. Takami, K. Ko-
depth 141 (1994) 371
jima and M. Nunoshita, Experimental ev-
Kumar, V., see Dutta 141 (1994) 44
idence of a designed interface structure
Kumar, V., see Dutta 141 (1994) 476
model in a highly mismatched system of
Kuroda, K., see Kataoka 141 (1994) 479
(001) Bi-Sr—Ca—Cu-O superconducting
Kirten, M. and J. Schilz, Polycrystalline wet-
films on (001) gadolinium gallium garnet
ting layer on Czochralski single crystals
substrates 141 (1994) 479
of strongly segregating systems 141 (1994) 473
Kawai, T., see Matsubara 141 (1994) 131
Kelly, J.J., see Weyher 141 (1994) 57
Kim, C.K., see Kim 141 (1994) 324 Laasch, M., R. Schwarz, P. Rudolph and
Kim, M.-S., see Kim 141 (1994) 324 K.W. Benz, CdTe crystal growth by a
Kim, S.-D., H. Lee and J.S. Harris, Jr., sublimation traveling heater method 141 (1994) 81
Molecular beam epitaxial growth of Lacmann, R., see Kipp 141 (1994) 291
Ing ¢sGag35As quantum wells on GaAs
Lamare, B., J.L. Benchimol, M. Juhel, B.
substrates for 1.5 wm exciton resonance 141 (1994) 37 Akamatsu, P. Legay and F. Alexandre,
Kim, S.-I., Y. Kim, M.-S. Kim, C.K. Kim, High carbon doping of GaAs using tris-
S.-K. Min and G. Lee, Carbon doping dimethylaminoarsenic and trimethylgal-
characteristics of GaAs and Al, ,;Gay 7As
lium in chemical beam epitaxy 141 (1994) 347
grown by atmospheric pressure metalor- Lan, C.W., Heat transfer, fluid flow, and
ganic chemical vapor deposition using interface shapes in the floating-zone
CCl, 141 (1994) 324 growth of tube crystals 141 (19942)6 5
Kim, Y., see Kim 141 (1994) 324 Landwehr, G., see Fischer 141 (1994) 93
Kinoshita, M., see Jang 141 (1994) 153 Langbein, W., see Giessen 141 (1994) 75
Kinoshita, N., see Anzai 141 (1994) 119 Lee, B.J., see Lee 141 (19942)0 9
Kipp, S., R. Lacmann and M.A. Schneeweis, Lee, C., see Kim 141 (19943)2 4
Methods and apparatus for in situ inves- Lee, H., see Kim 141 (1994) 37
tigations with the scanning force micro- Lee, Z.H., B.J. Lee, M.S. Kang, $S.M. Chung
scope 141 (1994) 291 and S.R. Coriell, Experimental investiga-
Kitamura, M., H. Furukawa and M. Asaeda, tion of convection during vertical Bridg-
Solvent effect of ethanol on crystalliza- man growth of dilute Al-Mg alloys 141 (19942)0 9
tion and growth process of L-histidine Legay, P., see Lamare 141 (19943)4 7
polymorphs 141 (1994) 193 Lewtas, K., see Clydesdale 141 (19944)4 3
Kitazawa, M., M. Takahashi and M. Mat- Lin, S., see Tan 141 (19943)9 3
suoka, Growth behavior of L-pyrroli- Litz, Th., see Fischer 141 (1994) 93
done-2-carboxylic acid (L-PCA) single Lu, S., see Tan 141 (19943)9 3
crystals 141 (19944)2 5 Luther, K.-D., see ROmer 141 (19941)5 9
Kito, M., see Murata 141 (1994) 29 Lyutovich, K.L., see Vdovin 141 (19941)0 9
Klingshirn, C., see Grin 141 (1994) 68
Klingshirn, C., see Giessen 141 (1994) 75
Knauf, N., see Kriebel 141 (19941)2 4 Magnan, A., see Coupat 141 (1994) 465
Kojima, K., see Kataoka 141 (19944)7 9 Mao, H., see Tan 141 (1994) 393
490 Author index / Journal of Crystal Growth 141 (1994) 487-491
Markov, I. and A. Trayanov, Formation of Ogawa, T., see Tan 141 (1994) 393
cracks in epitaxial overlayers 141 (1994) 239 Ogura, T., see Matsubara 141 (1994) 131
Martinelli, R.U., see Menna 141 (1994) 310 Okajima, Y., S. Asai, Y. Terui, R. Terasaki
Maruno, T., see Félsch 141 (1994) 256 and H. Murata, Precise control of growth
Matsubara, I., R. Funahashi, T. Ogura, H. site of silicon vapor—liquid-—solid crystals 141 (1994) 357
Yamashita, K. Tsuru and T. Kawai, Okano, Y., Y. Tsuji, D.H. Yoon, K.
Growth mechanism of Bi,Sr,CaCu,O, Hoshikawa and T. Fukada, Internal ra-
superconducting whiskers 141 (1994) 131 diative heat transfer in Czochralski
Matsuoka, M., see Kitazawa 141 (1994) 425 growth of LiTaO, single crystal 141 (1994) 383
McCann, P.J. and S.K. Aanegola, The role Olsen, G., see Menna 141 (1994) 310
of graphite boat design in liquid phase
epitaxial growth of PbSe,7.Te,> . on
Palmer, J., see Menna 141 (1994) 310
BaF, 141 (1994) 376
Pollert, E., see Nevriva 141 (1994) 175
Menna, R.J., D.R. Capewell, R.U. Mar-
tinelli, W. Ayers, R. Moulton, J. Palmer
and G. Olsen, Epitaxial growth of Radhakrishnan, K., see Han 141 (1994) 51
InP» ggSbp ;> using a stibine generator 141 (1994) 310 Radhakrishnan, S., Polymer induced crystal-
Mihalik, G.B., see Monchamp 141 (1994) 178 lization. III. PEO—CdCl, and in situ for-
Mihashi, Y., M. Miyashita, N. Kaneno, M. mation of PEO-—CdS composite 141 (19944)3 7
Tsugami, N. Fujii, S. Takamiya and S. Ramasamy, P., see Krishnamurthy 141 (19943)7 1
Mitsui, Influence of oxygen on the Ravelosona, D., see Contour 141 (19941)4 1
threshold current of AlGaAs multiple Rioux, J., see Contour 141 (19941)4 1
quantum well lasers grown by metalor- Roberts, K.J., see Clydesdale 141 (19944)4 3
ganic chemical vapor deposition 141 (1994) 22 Roden, B., see Kriebel 141 (19941)2 4
Mil’vidskii, M.G., see Vdovin 141 (19941)0 9 Romer, H., K.-D. Luther and W. Assmus,
Min, S.-K., see Kim 141 (19943)2 4 The distribution coefficients of rare earth
Mitsuhara, M., see Sugiura 141 (19942)9 9 ions in cubic zirconium dioxide 141 (1994) 159
Mitsui, S., see Mihashi 141 (1994) 22 Rosenberger, F., see Fredericks 141 (1994) 183
Miyashita, M., see Mihashi 141 (1994) 22 Rosenthal, B.N., see Kasparian 141 (1994) 455
Miyashita, S., H. Komatsu, Y. Suzuki and T. Rudolph, P., see Laasch 141 (1994) 81
Nakada, Observation of the concentra-
tion distribution around a_ growing
Saban, S.B., see Nordquist 141 (19943)4 3
lysozyme crystal 141 (1994) 419
Saidov, S.M., see Vdovin 141 (19941)0 9
Monchamp, R.R., G.B. Mihalik and L.A.
Saitoh, T., see Yodo 141 (19943)3 1
Franks, On the nature of striae in stron-
Salamanca-Riba, L., see Hua 141 (19941)6 5
tium barium niobate 141 (1994) 178
Sangunni, K.S., see Dutta 141 (1994) 44
Moulton, R., see Menna 141 (1994) 310
Sangunni, K.S., see Dutta 141 (19944)7 6
Murata, H., see Okajima 141 (1994) 357
Sant, C., see Contour 141 (19941)4 1
Murata, K., T. Ishihara, M. Sato, N. Kito
Sato, M., see Murata 141 (1994) 29
and M. Hirano, <(100) Oriented GaAs
Schilz, J., see Kiirten 141 (19944)7 3
single crystals grown by boat method 141 (1994) 29
Schmitt, M., see Fischer 141 (1994) 93
Murray, B.T., see Coriell 141 (1994) 219
Schneeweis, M.A., see Kipp 141 (19942)9 1
Scholl, S., see Fischer 141 (1994) 93
Schwarz, R., see Laasch 141 (1994) 81
Nakada, T., see Miyashita 141 (1994) 419 Sekiguchi, H., see Kondo 141 (1994) 1
Nevriva, M. and E. Pollert, Phase diagram of Shinohara, M., Nugraha, Y. Noda and Y.
the CuO-Bi,SrO, pseudobinary system 141 (1994) 175 Furukawa, Hg-loss compensation and
Nishio, J. and H. Fujimoto, Theoretical anal- wiping-off of source liquid on slider liq-
ysis for the segregation in the liquid en- uid phase epitaxy of Hg, _,Cd,Te 141 (1994) 352
capsulated Czochralski system 141 (1994) 249 Singh, N.B., see Kasparian 141 (1994) 455
Noda, Y., see Shinohara 141 (1994) 352 Sitar, Z., L.L. Smith and R.F. Davis, Inter-
Nordquist, Jr., P.E.R., R.L. Henry, J.S. face chemistry and surface morphology in
Blakemore, S.B. Saban and R.J. Gorman, the initial stages of GaN and AIN on
Annealing of GaAs grown by vertical a-SiC and sapphire 141 (1994) 11
zone melting 141 (1994) 343 Smith, L.L., see Sitar 141 (1994) 11
Nugraha, see Shinohara 141 (1994) 352 Soltani, P.K., see Hua 141 (1994) 165
Nunoshita, M., see Kataoka 141 (1994) 479 Su Genbo, see He 141 (1994) 389
Author index / Journal of Crystal Growth 141 (1994) 487-491 491
Sugiura, H., M. Mitsuhara, R. Iga and Van der Heijden, A.E.D.M., see Van Driel 141 (1994) 404
N. Yamamoto, Metalorganic molecular Van Driel, C.A., A.E.D.M. van der Heijden,
beam epitaxial growth of highly uniform S. de Boer and G.M. van Rosmalen, The
InGaAsP quantum well structures using III-IV phase transition in ammonium ni-
an indium-free holder 141 (1994) 299 trate: mechanisms 141 (1994) 404
Sulima, O.V., see Baldus 141 (1994) 315 Van Rosmalen, G.M., see Van Driel 141 (1994) 404
Suzuki, Y., see Miyashita 141 (1994) 419 Vdovin, V.I., M.G. Mil’vidskii, T.G. Yugova,
K.L. Lyutovich and S.M. Saidov, Effect
Takahashi, M., see Kitazawa 141 (19944)2 5 of alloy composition on defect formation
Takami, T., see Kataoka 141 (19944)7 9 in Ge,Si,_,/ Si heterostructures ob-
Takamiya, S., see Mihashi 141 (1994) 22 tained by molecular beam epitaxy 141 (1994) 109
Takei, H., see Jang 141 (19941)5 3
Takeuchi, S., see Iwanaga 141 (19942)3 4
Waag, A., see Fischer 141 (1994) 93
Tamura, M., see Jang 141 (19941)5 3
Wettling, W., see Baldus 141 (1994) 315
Tamura, M., see Yodo 141 (19943)3 1
Weyher, J.L., R. Fornari, T. Gorég, J.J. Kelly
Tan, Q., H. Mao, S. Lin, H. Chen, S. Lu, D.
and B. Erné, HBr—K,Cr,07-H,0 etch-
Tang and T. Ogawa, Defects in £B-
BaB,O, (BBO) crystals observed by laser ing system for indium phosphide 141 (1994) 57
Winkel, G., see Kriebel 141 (1994) 124
scanning tomography 141 (1994) 393
Wuttig, M., see Hua 141 (1994) 165
Tanahashi, T., see Kondo 141 (1994) 1
Tang, D., see Tan 141 (1994) 393
Tegetmeier, A., A. Croll and K.W. Benz, A
Yamamoto, N., see Sugiura 141 (1994) 299
formula describing the temperature de-
Yamashita, A., see Félsch 141 (1994) 256
pendence of surface tension for some
Yamashita, H., see Matsubara 141 (1994) 131
semiconductor melts 141 (19944)5 1
Yiu Guiming, see He 141 (1994) 389
Terasaki, R., see Okajima 141 (19943)5 7
Yodo, T., M. Tamura and T. Saitoh, Rela-
Terui, Y., see Okajima 141 (19943)5 7
tionship between the optical and struc-
Tokumoto, M., see Anzai 141 (19941)1 9
tural properties in GaAs heteroepitaxial
Tomita, M., see Folsch 141 (19942)5 6
layers grown on Si substrates 141 (1994) 331
Trayanov, A., see Markov 141 (19942)3 9
Yoon, D.H., see Okano 141 (1994) 383
Tsugami, M., see Mihashi 141 (1994) 22
Yoon, S.F., see Han 141 (1994) 51
Tsuji, Y., see Okano 141 (19943)8 3
Yugova, T.G., see Vdovin 141 (1994) 109
Tsuru, K., see Matsubara 141 (19941)3 1
Uchida, T., see Anzai 141 (1994) 119 Zhang, L., see Bretz 141 (1994) 304
Ueda, M., see Hirokawa 141 (1994) 200 Zhao, T.R., see Jang 141 (1994) 153
R(area jouermor GCRRYOSWTTAHL
pes
ELSEVIER Journal of Crystal Growth 141 (1994) 492-494
Subject index
Aluminum by physical methods
— gallium arsenide 22, 51, 324 — of lysozyme solutions 183
gallium indium phosphide 1 by scanning force microscopy
— magnesium alloy 209 — — of L-ascorbic acid 291
— nitride 11 — — of lithium fluoride 291
— organic 1 — by second harmonic generation
Ammonium — — of organic nonlinear optical material 389
— nitrate 404 — by X-ray diffraction
Apparatus — — of strain state of GeSi/Si 103
— for miscellaneous purposes Computer simulation
— — graphite boat design in liquid phase epitaxy 376 — of horizontal Bridgman solidification 279
— — in situ scanning force microscopy 291 — of morphology of molecular crystals 443
— — luminescent devices, grown by electron beam evapora- — of organic (tubes) by floating zone 265
tion 165 Constitutional supercooling
— — stereo imaging of solid—melt interface 455 — of cadmium telluride 81
Arsenic — of germanium-silicon alloy 219
— organic 347 Convection 209, 265, 279
Barium Device characterization
— borate, B 393 — diodes 29
Bismuth
— electronic materials 81, 93, 315
— germanate 371 — lasers 299
~ silicate 371 — optoelectronic materials 29, 389, 393, 425
— strontium calcium cuprate 131, 479 — quantum wells 22, 37, 51, 299
Burton—Prim-Slichter theory
Diffusional control
— for distribution coefficient
— of cadmium telluride 81
— — in (cubic) zirconia 159
Diodes, see Device characterization
Dislocations
Cadmium
— in epitaxial overlayers 239
— magnesium telluride 93
Dissolution
— mercury telluride 352
— of lysozyme 183
— selenide 68, 75
— sulphide 68, 75, 437
~ telluride 81. 93 Electronic materials, see Device characterization
Carbon 304 Epitaxy, see Thin film growth
Characterization Etching
— chemical 29, 57, 234, 343, 357, 476
— by cracks
Eutectic growth
— — of epitaxial overlayers 239
— of silicon—gold 357
by electron microscopy
— of solid fats 200
— by liquid permeation Fats
— — of solid fats 200 — solid 200
— by photoluminescence
— — of aluminum gallium arsenide multi-quantum-well lasers Gallium
22 — antimonide 44, 476
Subject index / Journal of Crystal Growth 141 (1994) 492-494 493
— arsenide 1, 29, 51, 249, 315, 324, 331, 343, 347 — — of germanium-silicon alloy 219
— nitride 11 — — theory of 219
Germanium — by zone melting
— silicon 103, 109, 219, 363 — — of gallium arsenide 343
Mercury
Heat flow control — cadmium telluride 352
— in Czochralski grown lithium tantalate 383 — (II) iodide 465
L-Histidine 193 Microgravity, growth under
Hydrodynamics, see Convection — of mercury (II) iodide 465
Morphological stability
Indium — of cadmium sulphide in polymer matrix 437
— gallium arsenide 37 — of germanium-silicon alloy 219
— gallium arsenide phosphide 299 — of L-histidine 193
phosphide 57
phosphide antimonide 310 Naphthalene
— biphenyl 443
Kinetics Nonlinear optics, crystals for
— of doping in silicon epitaxy 98 — barium borate, B 393
— of growth 193, 219, 419, 425, 465, 476 — organic crystals 389, 425
-— of interface control 209, 473 Nucleation
— of dislocations in germanium-silicon 363
— of L-histidine 193
Lasers, see Device characterization
Numbers
Lasers, crystals for
— Grashof 279
— aluminum gallium arsenide 22
— Marangoni 279
— lead selenide telluride 376
— Prandtl 265, 279
Lead
— Rayleigh 209
— bromide 455
— Schmidt 279
— cuprate 124
— selenide telluride 376
Lithium Optoelectronic materials, see Device characterization
— gallium 399 Organic crystals 256, 443
— tantalate 383 — nonlinear optical material 289, 425
Lysozyme 183, 419 — superconductors 119
Melt growth technique Phase diagrams
— by Bridgman-Stockbarger method — of ammonium nitrate 404
— — of aluminum—magnesium alloy 209 — of copper oxide / bismuth strontium oxide 175
— — of gallium antimonide 44, 476 of etchant for indium phosphide 57
— — of gallium arsenide 29 of silicon—gold 357
— — of lead bromide 455 of yttrium oxide / copper oxide 153
— — of lithium—gallium 399 Precursor
— theory of 279 — for doping in gallium arsenide 347
— by Czochralski method Purification of materials
— — of bismuth germanates 371 — of lysozyme 183
— — of bismuth silicates 371
— — of lithium tantalate 383 Quantum wells, see Device characterization
— — of silicon—germanium 473
— — of strontium barium niobate 178 Semiconductor melts 451
— — theory of meniscus height 484 Silicon 98, 265
— — theory of segregation 249 — germanium 473
— by floating zone method Sodium
— — theory of 256, 265 — nitrate 265
— by pulling with a gold wire Solid growth technique
— — of bismuth strontium cuprate 175 — by polymorphic transformation
— by skull melting — — of ammonium nitrate 404
— — of (cubic) zirconia 159 — — of fats, solid 200
— by uniaxial solidification — — of L-histidine 193
494 Subject index / Journal of Crystal Growth 141 (1994) 492-494
Solution growth technique — — of lead selenide telluride 376
— by electrocrystallization — — of mercury cadmium telluride 352
— — of organic superconductor 119 by metalorganic molecular beam epitaxy
by flux method — of indium gallium arsenide phosphide 299
of barium borate, B 393 by molecular beam epitaxy
of lead cuprate, superconductor 124 — of aluminum gallium arsenide 51
of L-histidine 193 of aluminum nitride 11
of yttrium cuprate 150, 153 of cadmium magnesium telluride 93
by low temperature method of cadmium telluride 93
— of cadmium sulphide in presence of polymer 437 of gallium arsenide 51, 315, 331
— of lysozyme 419 of gallium nitride 11
— of organic crystals 389, 425 of germanium-silicon alloy 109
theory of 443 of indium gallium arsenide 37
Stefan problem or moving boundary problem of organic crystals 256
— of (cubic) zirconium 159 of zinc selenide 89
Strontium by pulsed layer deposition
— barium niobate 178 — of yttrium barium cuprate 141
— sulphide 165 by sputtering
— titanate 141 — of bismuth strontium calcium cuprate 479
Superconductivity materials, high 7, by vapor phase epitaxy
— bulk — through chemical vapor deposition
— of lead strontium (yttrium calcium) cuprate 124 — — of silicon 98
film — through metalorganic chemical vapor deposition
— of BSCCO 479 — — of aluminum gallium arsenide 22, 324
— of YBCO 141 — — of aluminum gallium indium phosphide 1
whisker — — of gallium arsenide 1, 324
— - of BSCCO 131 — — of indium phosphide antimonide 310
Superconductivity materials, low 7, Twinning
— bulk — of zinc oxide 234
— — of organic crystals 119
Superlattices, multilayers Vapor growth technique
— of superconductor 141 — by chemical transport
— of III-V compounds 51 — — of zinc oxide 234
Surface energy, determination — by evaporation and condensation
-— of naphthalene biphenyl 443 — — of cadmium telluride 81
— of semiconductor melts 451 — — of carbon fiber 304
Surface morphology — — of mercury (II) iodide 465
— of gallium antimonide 476 Vapor-liquid-—solid growth
Surface structure — of silicon 357
— of carbon microtubule 304
— of naphthalene biphenyl 443 Whisker growth
of bismuth strontium calcium cuprate 131
Tellurium of carbon fiber 304
— dioxide 371 of silicon 357
Thin film growth, epitaxy of zinc oxide 234
— by chemical beam epitaxy
— — of gallium arsenide 347 Yttrium
— by electron beam epitaxy — cuprate 150, 153
— — of strontium sulphide 165
— by hot wall epitaxy Zinc
— — of cadmium selenide 68, 75 — oxide 204
— — of cadmium sulphide 68, 75 — selenide 89
by liquid phase epitaxy Zirconia (cubic) 159
— of gallium arsenide 315 Zirconium
— of germanium-silicon 363 — dioxide 159