Table Of Content

joverncor CRYSTAL GROWTH ELSEVIER Journal of Crystal Growth 140 (1994) 459-462 Author index Alberts, V., Influence of initial growth pa- ment chemical vapor deposition on posi- rameters on the structural and optical tively biased silicon substrates 140 (19944)5 4 properties of GaAs on (001) Si 140 (19942)9 9 Charlson, E.J., see Chao 140 (1994) 454 Alexiev, D., see Butcher 140 (1994) 9 Charlson, E.M., see Chao 140 (1994) 454 Anestiev, L., On the solute redistribution at Chen, F., see Kaito 140 (1994) 123 thermally activated phase transition pro- Chen, F., see Lu 140 (1994) 182 cesses. I. Theory 140 (1994) 167 Chen, S.D., L. Lin, X.Z. He, Z.Y. Xu, C.P. Anestiev, L., On the solute redistribution at Luo and J.Z. Xu, High-resolution photo- thermally activated phase transition pro- luminescence studies of (211) CdTe cesses. II. Applications 140 (1994) 175 grown on (211)B GaAs substrate 140 (1994) 287 Avramov, V.G., see Bikov 140 (1994) 100 Chen Yufei, see Hao 140 (1994) 441 Chichibu, S., S. Shirakata, A. Ogawa, R. Sudo, M. Uchida, Y. Harada, T. Bhat, H.L., see Venkataramanan 140 (1994) 336 Wakiyama, M. Shishikura, S$. Matsumoto Bikov, A.Z., V.G. Avramov, $.B. Damianova and S. Isomura, Growth of Cu(Al, and S.D. Stoichkov, Adsorption of Fe** Ga, _, )SSe pentenary alloy crystals by io- ions on the (001) face of a triglycine dine chemical vapor transport method 140 (19943)8 8 sulphate crystal; in situ investigation 140 (1964) 100 Chong, T.C., see Zeng 140 (1994) 148 Billia, B., see Minari 140 (19942)6 4 Conte, A., see Rajavel 140 (1994) 327 Boisvert, R.F., see Coriell 140 (1994) 139 Coriell, $.R., R.F. Boisvert, G.B. McFadden, Booker, G.R., see Philips 140 (1994) 249 L.N. Brush and J.J. Favier, Morphologi- Boyer, A., see Mzerd 140 (19943)6 5 cal stability of a binary alloy during direc- Braunstein, G., see Wernberg 140 (1994) 57 tional solidification: initial transient 140 (1994) 139 Bridenbaugh, P.M., see Laudise 140 (1994) 51 Brunthaler, G., see Ferreira 140 (1994) 282 Brush, L.N., see Coriell 140 (1994) 139 Damianova, S.B., see Bikov 140 (1994) 100 Bublik, V.T., A.K. Tkalich and M.L. Shupe- De Boer, R.C., P.H.M. van Loosdrecht and gin, Clusters of native point defects and H.L.M. Meekes, Identification of gaseous high-coercive state in films of Ca,Ge-sub- oxygen and nitrogen in bubble inclusions stituted magnetic garnet 140 (1994) 84 in Bi,GeO,), (BGO) crystals by means Butcher, K.S.A., D. Alexiev and T.L. Tans- of Raman spectroscopy 140 (1994) 361 ley, Lithium compensation of GaAs 140 (1994) 9 Dhanaraj, G., see Venkataramanan 140 (1994) 336 Dhanasekaran, R., see Qhalid Fareed 140 (1994) 28 Duncan, W.J., see Harlow 140 (1994) 19 Camel, D., see Favier 140 (1994) 237 Campbell, S.A., see Knutson 140 (1994) 191 Campbell, T.A. and J.N. Koster, Visualiza- Faschinger, W., see Ferreira 140 (1994) 282 tion of liquid—solid interface morpholo- Favier, J.J., see Coriell 140 (1994) 139 gies in gallium subject to natural convec- Favier, J.J., J.P. Garandet, A. Rouzaud and tion 140 (1994) 414 D. Camel, Mass transport phenomena Carlin, J.F., see Gailhanou 140 (1994) 205 during solidification in microgravity; pre- Carr, R.W., see Knutson 140 (1994) 191 liminary results of the first Mephisto Chao, C.H., G. Popovici, E.J. Charlson, E.M. flight experiment 140 (1994) 237 Charlson, J.M. Meese and M.A. Prelas, Ferreira, $.0., H. Sitter, W. Faschinger and Smooth diamond films grown by hot fila- G. Brunthaler, Growth of highly doped 460 Author index / Journal of Crystal Growth 140 (1994) 459-462 p-type ZnTe layers on GaAs using a ni- Iradi, T., see Laudise 140 (1994) 51 trogen DC plasma cell 140 (1994) 282 Ishizawa, Y., see Otani 140 (1994) 451 Franks, L.A., see Monchamp 140 (1994) 439 Isomura, S., see Chichibu 140 (1994) 388 Fujimura, N., see Nagai 140 (1994) 65 Isu, T., see Gotoda 140 (1994) 277 Fukuda, T., see Kang 140 (1994) 435 Ito, T., see Nagai 140 (1994) 65 Furukawa, Y., see Markgraf 140 (1994) 343 Furukawa, Y., see Mikami 140 (1994) 429 Johnson, M., see Watring 140 (1994) 41 Gailhanou, M., J.F. Carlin and U. Oesterle, X-ray diffraction analysis of low mis- Kaito, C., Y. Saito, T. Watanabe, K. Oh- match epitaxial layers grown on misori- tsuka, F. Chen and M. Nakamura, ented substrates 140 (1994) 205 Growth mechanism of ultrafine tellurium Garandet, J.P., see Favier 140 (1994) 237 particles produced by the gas evapora- Gauthier, F., see Lin 140 (1994) 72 tion method 140 (1994) 123 Gill, W.N., see Kim 140 (1994) 308 Kang, J., Y. Okano, K. Hoshikawa and T. Gill, W.N., see Kim 140 (19943)1 5 Fukuda, Influence of a high vertical mag- Gotoda, M., H. Sugimoto, Y. Nomura, T. netic field on Te dopant segregation in Isu, M. Nunoshita and S. Maruno, Selec- InSb grown by the vertical gradient freeze tively embedded growth by chemical method 140 (1994) 435 beam epitaxy for the fabrication of In Kang, W.N., see Yoon 140 (1994) 355 GaAs /InP double-heterostructure lasers 140 (1994) 277 Keller, B.P., S. Keller, H. Herrnberger, J. Gysling, H.J., see Wernberg 140 (1994) 57 Lenzner, S. Nilsson and W. Seifert, Com- positional gradients in Ga,In,_,As on patterned InP substrates grown by at- Han, Q. and J.D. Hunt, Particle pushing: the mospheric-pressure metalorganic vapour concentration of particles near a solid interface during downward flow 140 (1994) 398 phase epitaxy 140 (1994) 33 Keller, S., see Keller 140 (1994) 33 Han, Q. and J.D. Hunt, Particle pushing: the Keramidas, V.G., see Philips 140 (1994) 249 attachment of particles on the solid— liquid interface during fluid flow 140 (19944)0 6 Kim, E.J. and W.N. Gill, A new model for Han, T.J.P., see Sharp 140 (1994) 79 low pressure chemical vapor deposition of SiO, films by ozone augmented te- Hao Zhaoyin, He Yixing, Chen Yufei and traethoxysilane 140 (19943)0 8 Wang Derong, Nucleation and growth of diamond 140 (19944)4 1 Kim, E.J. and W.N. Gill, Analytical model Harada, Y., see Chichibu 140 (1994) 388 for chemical vapor deposition of SiO, Harbison, J.P., see Philips 140 (1994) 249 films using tetraethoxysilane and ozone 140 (19943)1 5 Kirkaldy, J.S., see Liu 140 (1994) 115 Harlow, M.J., W.J. Duncan, I.F. Lealman Knutson, K.L., R.W. Carr, W.H. Liu and and P.C. Spurdens, Chromium-doped S.A. Campbell, A kinetics and transport semi-insulating InP grown by metalor- ganic vapour phase epitaxy 140 (1994) 19 model of dichlorosilane chemical vapor He, X.Z., see Chen 140 (19942)8 7 deposition 140 (1994) 191 He Yixing, see Hao 140 (19944)4 1 Kobayashi, T., M. Ida and K. Kurishima, Henderson, B., see Sharp 140 (1994) 79 Effects of susceptor rotation speed and Herrnberger, H., see Keller 140 (1994) 33 total flow rate on selectivity in metalor- Hirano, M., see Zeng 140 (1994) 148 ganic chemical vapor deposition growth Hoffman, M.J., see Kramer 140 (1994) 157 techniques 140 (1994) 432 Hoshikawa, K., see Kang 140 (19944)3 5 Kong, Y., J. Wen and H. Wang, Dislocations Hunt, J.D., see Han 140 (19943)9 8 and subgrain boundaries in highly mag- Hunt, J.D., see Han 140 (19944)0 6 nesium-doped lithium niobate crystals 140 (1994) 45 Koster, J.N., see Campbell 140 (19944)1 4 Kramer, M., D. Wittmiiss, H. Kiippers, M.J. Ida, M., see Kobayashi 140 (1994) 432 Hoffmann and G. Petzow, Relations be- lijima, K., see lijima 140 (1994) 91 tween crystal structure and growth mor- lijima, M., K. lijima, Y. Moriwaki and Y. phology of B-Si,N, 140 (1994) 157 Kuboki, Oriented growth of octacalcium Kuboki, Y., see lijima 140 (1994) 91 phosphate crystals on type I collagen fib- Kumagai, H., see Zeng 140 (1994) 148 rils under physiological conditions 140 (1994) 91 Kiippers, H., see Kramer 140 (1994) 157 Illingworth, R., see Sharp 140 (1994) 79 Kurishima, K., see Kobayashi 140 (1994) 432 Author index / Journal of Crystal Growth 140 (1994) 459-462 Lagasse, R.R., Exceptionally large banded Mori, H., InP heteroepitaxy on Si substrates spherulites 140 (1994) 370 in In—PH ,-HCI-H, systems 140 (1994) 291 Laudise, R.A., P.M. Bridenbaugh and T. Moriwaki, Y., see lijima 140 (1994) 91 Iradi, Pressure balance under hydrother- Mzerd, A., D. Sayah, J.C. Tedenac and A. mal conditions 140 (1994) 51 Boyer, Optimal crystal growth conditions Lealman, I.F., see Harlow 140 (1994) 19 of thin films of Bi,Te, semiconductors 140 (1994) 365 Lee, B.T. and R.A. Logan, Growth of InP on etched grooves using atmospheric pres- Nagai, S., N. Fujimura, H. Tanaka and T. sure metalorganic vapor phase epitaxy 140 (1994) 1 Ito, (115)Bi,Sr,CuO, epitaxial films on Lenzner, J., see Keller 140 (1994) 33 (110)SrTiO, by solid phase epitaxy 140 (1994) 65 Liang, W.Y., see Lin 140 (1994) 72 Nakamura, M., see Kaito 140 (1994) 123 Lim, L.C., see Zeng 140 (1994) 148 Nanev, Chr.N., Critical size of crystals grow- Lin, C. and A.F. Witt, Decoration of disloca- ing under diffusion conditions for loss of tions in Bi,»SiO.) crystals by annealing polyhedral stability 140 (1994) 381 in a reducing atmosphere 140 (19944)4 4 Nilsson, S., see Keller 140 (1994) 33 Lin, C.T., W. Zhou, A.P. Mackenzie, F. Nobe, Y., see Sugimoto 140 (1994) 349 Gauthier and W.Y. Liang, Flux growth of Noda, Y., see Mikami 140 (1994) 429 Sr, _,Ca,CuO, single crystals 140 (1994) 72 Nomura, Y., see Gotoda 140 (1994) 277 Lin, L., see Chen 140 (1994) 287 Norman, A.G., see Philips 140 (1994) 249 Liu, L.X. and J.S. Kirkaldy, Systematics of Nunoshita, M., see Gotoda 140 (1994) 277 thin film cellular dendrites and the cell- to-dendrite transition in succinonitrile- Oesterle, U., see Gailhanou 140 (19942)0 5 salol, succinonitrile—acetone and pivalic Ogawa, A., see Chichibu 140 (19943)8 8 acid—ethanol 140 (1994) 115 Ohshima, N., see Pak 140 (19942)4 4 Liu, W.H., see Knutson 140 (1994) 191 Ohtsuka, K., see Kaito 140 (1994) 123 Logan, R.A., see Lee 140 (1994) 1 Okano, Y., see Kang 140 (1994) 435 Louchev, O.A., Diffusion, heat transfer, Otani, S. and Y. Ishizawa, Preparation of equilibrium molecular density and kinetic TiB, single crystals by the floating zone mechanism of morphological instability method 140 (1994) 451 in physical vapor deposition 140 (19942)1 9 Lu, J.W. and F. Chen, Instability-mode com- Pak, K., I. Saitoh, N. Ohshima and H. petition due to change of partition coeffi- Yonezu, In-situ maskless selective area cient of binary alloy unidirectionally so- epitaxy of GaAs using a low-energy Ga lidified from below 140 (1994) 182 focused ion beam 140 (1994) 244 Luo, C.P., see Chen 140 (1994) 287 Park, K.-S., see Mikami 140 (1994) 429 Petzow, G., see Kramer 140 (1994) 157 Mackenzie, A.P., see Lin 140 (1994) 72 Philips, B.A., AG. Norman, T.Y. Seong, S. Mahajan, S., see Philips 140 (1994) 249 Mahajan, G.R. Booker, M. Skowronski, MareS, J.J., see Sestakova 140 (1994) 426 J.P. Harbison and V.G. Keramidas, Markgraf, S.A., Y. Furukawa and M. Sato, Mechanism for CuPt-type ordering in Top-seeded solution growth of LiB,O, 140 (1994) 343 mixed III-V epitaxial layers 140 (1994) 249 Maruno, S., see Gotoda 140 (1994) 277 Popovici, G., see Chao 140 (1994) 454 Matsumoto, S., see Chichibu 140 (1994) 388 Prelas, M.A., see Chao 140 (1994) 454 McFadden, G.B., see Coriell 140 (1994) 139 Meekes, H.L.M., see De Boer 140 (1994) 361 Qhalid Fareed, R.S., R. Dhanasekaran and Meese, J.M., see Chao 140 (1994) 454 P. Ramasamy, Investigation on the con- Mihalik, G.B., see Monchamp 140 (1994) 439 centration profiles of As during the cur- Mikami, M., K.-S. Park, Y. Noda and Y. rent-controlled liquid phase epitaxial Furukawa, Radical-assisted metalorganic growth of GaAs 140 (1994) 28 chemical vapor deposition of ZnSe 140 (1994) 429 Minari, F. and B. Billia, Mixed cells in direc- Rajavel, D., A. Conte and C.J. Summers, tional solidification of In-doped GaAs; Pyrolysis characteristics of iodine precur- cellular profile and shape-induced sors for gas source n-type doping of II-VI stresses 140 (1994) 264 compounds 140 (1994) 327 Monchamp, R.R., G.B. Mihalik and L.A. Ramasamy, P., see Qhalid Fareed 140 (1994) 28 Franks, Octagonal crystals of strontium Riesz, F., Rotated tilting in lattice-mis- barium niobate (SBN : 61) 140 (1994) 439 matched heteroepitaxial systems 140 (1994) 213 462 Author index / Journal of Crystal Growth 140 (1994) 459-462 Rodriguez-Clemente, R., see Sangwal 140 (1994) 447 Uchida, M., see Chichibu 140 (1994) 388 Rouzaud, A., see Favier 140 (1994) 237 Uda, S., Influence of unit cluster size on nucleation rate of Li,B,O, melt 140 (1994) 128 Saito, Y., see Kaito 140 (1994) 123 Saitoh, I., see Pak 140 (1994) 244 Van Loosdrecht, P.H.M., see De Boer 140 (1994) 361 Veintemillas-Verdaguer, S., see Sangwal 140 (1994) 447 Sangwal, K., S. Veintemillas-Verdaguer, J. Venkataramanan, V., G. Dhanaraj and H.L. Torrent-Burgués and R. Rodriguez-Cle- Bhat, Growth mechanism, dislocation mente, Decoration of growth and disso- etching and mechanical properties of L- lution steps on the surfaces of L-arginine phosphate monohydrate crystals 140 (1994) 447 arginine phosphate and deuterated L- Sato, M., see Markgraf 140 (1994) 343 arginine phosphate 140 (1994) 336 Sayah, D., see Mzerd 140 (1994) 365 Wakiyama, T., see Chichibu 140 (19943)8 8 Seifert, W., see Keller 140 (1994) 33 Wang Derong, see Hao 140 (19944)4 1 Seong, T.Y., see Philips 140 (1994) 249 Wang, H., see Kong 140 (1994) 45 Sestak, J., see Sestaékova 140 (1994) 426 Watanabe, T., see Kaito 140 (1994) 123 Sestakova, V., B. Stépanek, J.J. Mare’ and J. Watring, D.A. and M. Johnson, Ampoule Sestak, Hydrogen passivation of residual failure sensor development for semicon- acceptors in GaSb single crystals 140 (1994) 426 ductor crystal growth experiments 140 (1994) 41 Sharp, J.H., T.J.P. Han, B. Henderson and Wen, J., see Kong 140 (1994) 45 R. Illingworth, Instability in the growth Wernberg, A.A., H.J. Gysling and G. Braun- of Ti: Al,O, single-crystal fibres 140 (1994) 79 stein, Single crystalline growth of LiNbO, Shirakata, S., see Chichibu 140 (1994) 388 on LiTaO, by spray metalorganic chemi- Shishikura, M., see Chichibu 140 (1994) 388 cal vapor deposition using the single Shupegin, M.L., see Bublik 140 (1994) 84 source precursor LiNb(OEt), 140 (1994) 57 Sitter, H., see Ferreira 140 (1994) 282 Witt, A.F., see Lin 140 (19944)4 4 Skowronski, M., see Philips 140 (1994) 249 Wittmiiss, D., see Kramer 140 (1994) 157 Spurdens, P.C., see Harlow 140 (1994) 19 Stépanek, B., see Sestakova 140 (1994) 426 Xu, J.Z., see Chen 140 (1994) 287 Stoichkov, $.D., see Bikov 140 (1994) 100 Xu, Z.Y., see Chen 140 (1994) 287 Sudo, R., see Chichibu 140 (1994) 388 Yamagishi, K., see Sugimoto 140 (19943)4 9 Sugimoto, A., Y. Nobe and K. Yamagishi, Yom, S.S., see Yoon 140 (1994) 355 Crystal growth and optical characteriza- Yonezu, H., see Pak 140 (1994) 244 tion of Cr,Ca: Y,Al,;0;5 140 (1994) 349 Yoon, Y.K., see Yoon 140 (1994) 355 Sugimoto, H., see Gotoda 140 (1994) 277 Yoon, Y.S., Y.K. Yoon, W.N. Kang and S.S. Summers, C.J., see Rajavel 140 (1994) 327 Yom, Analysis of the formation of BaTiO, island deposited on (111) InSb Tanaka, H., see Nagai 140 (1994) 65 by metalorganic chemical vapor deposi- Tansley, T.L., see Butcher 140 (1994) 9 tion at low temperature 140 (1994) 355 Tedenac, J.C., see Mzerd 140 (19943)6 5 Tkalich, A.K., see Bublik 140 (1994) 84 Zeng, H.C., T.C. Chong, L.C. Lim, H. Ku- Torrent-Burgués, J., The Gibbs energy and magai and M. Hirano, Pseudo-dendritic the driving force at crystallization from growth in lead molybdate single crystal solution 140 (1994) 107 by Czochralski technique 140 (1994) 148 Torrent-Burgués, J., see Sangwal 140 (1994) 447 Zhou, W., see Lin 140 (1994) 72 NH, journo CRYSTAL GROWTH ELSEVIER Journal of Crystal Growth 140 (1994) 463-465 Subject index Alloys Copper — binary 139 ~ (aluminum gallium) sulphur selenide 388 - of copper (aluminum gallium) sulphur selenide 388 — organic 115 Alumina 79 Dendritic growth Aluminum ~ of lead molybdate 148 ~— arsenide 205 ~ of organic alloys 115 Apatite 91 ~ theory of 398, 406 Apparatus Deuterated L-arginine phosphate 336 — for melt growth Device characterization — — by focused ion beam ~ double heterostructures 277 - — — of gallium arsenide 244 ~ electronic materials 9, 308 - for miscellaneous purposes — lasers 19, 277, 282, 287 Diamond 441, 454 ~ — ampoule failure sensor 41 ~ — growth in high magnetic fields 435 Diffusional control Arginine ~ of arsenic in gallium arsenide 28 - (L) phosphate monohydrate 336, 447 ~ of crystal growth, theory of 381 ~ of lithium in gallium arsenide 9 ~ (L) phosphate monohydrate, deuterated 336 Dissolution ~ of L-arginine phosphate monohydrate 447 Barium — titanate 355 Bismuth Electronic materials, see Device characterization germanium oxide 361 Epitaxy, see Thin film growth silicate 444 Etching strontium cuprate 65 ~ chemical 45, 277, 336, 444, 447 telluride 365 Eutectic growth ~ of silver—copper 175 Cadmium — telluride 287, 327 Gallium 414 Calcium — antimonide 426 — phosphate 91 — arsenide 9, 28, 205, 244, 264, 299 Cellular growth — indium arsenide 33 — of gallium arsenide 264 Garnets 84, 349 — theory of 398, 406 Characterization Indium — of bubbles in bismuth germanium oxide 361 — antimonide 435 — of heteroepitaxial systems 213 — gallium arsenide 277, 432 - X-ray diffraction analysis of III-V compounds 205 ~ phosphide 1, 19, 277, 291 Computer simulation of chemical vapor deposition 191 of concentration profiles 28 Kinetics of nucleation rate 128 — of growth 1, 33, 100, 167, 175, 191, 308, 315, 444 of silicon nitride 157 - of interface control 219 Convection 182, 237, 308, 315, 398, 406, 414, 435 -— of nucleation 128, 299 464 Subject index / Journal of Crystal Growth 140 (1994) 463-465 Lasers, see Device characterization Particles (solid) Lasers, crystals for — attachment to interface 406 — yttrium aluminum garnet 349 — concentration 398 Lead Phase diagrams — molybdate 148 — of silver—copper 175 Lithium — of water 51 — borate 128 Potassium — niobate 45, 57 — titanyl phosphate 51 — triborate 343 Precursor — for cadmium telluride 327 — for gallium indium arsenide 33 Maleic anhydride 370 — for II-VI compounds 327 Melt growth technique — by Bridgman-Stockbarger method — of bismuth telluride 365 Rare earth by Czochralski method — garnets 84 — of bismuth silicate 444 of gallium antimonide 426 Silicon 191 of gallium arsenide 264 — dioxide 308, 315 of lead molybdate 148 — nitride 157 of lithium niobate 45 Silver of strontium barium niobate 439 — copper 175 of yttrium aluminum garnet 349 Solid growth technique by floating zone method — by recrystallization — of titanium boride 451 -— — of diamond 441 — of yttrium aluminum garnet 349 Solution growth technique by pedestal growth method — by flux method — of alumina 79 — — of lithium triborate 343 by uniaxial solidification -— — of strontium calcium cuprate 72 — of gallium 414 by gel method — of organic alloys 115 — — of maleic anhydride 370 — theory of 182 — by hydrothermal growth by vertical gradient freeze method - — of potassium titanyl phosphate 51 — of indium antimonide 435 by low temperature method theory of 237 - of L-arginine phosphate monohydrate 336, 447 Microgravity, growth under — of deuterated L-arginine phosphate 336 — of tin 237 — of octacalcium phosphate 91 Morphological stability — of triglycine sulphate 100 of binary alloy during directional solidification 139 theory of 107 of gallium arsenide 264 Stefan problem or moving boundary problem of tin 237 - of binary alloy 139 in physical vapor deposition 219 — of cell formation 264 theory of 381 Strontium — barium niobate 439 - calcium cuprate 72 Nucleation Superlattices, multilayers — of diamond 441 — of .II-V compounds 205 — of lithium borate 128 Surface energy, determination — of tellurium 123 — of silicon nitride 157 Numbers — of triglycine sulphate 100 — Grashof 237, 414 Surface structure — Peclet 237 — of silicon nitride 157 — Rayleigh 237, 414 — Schmidt 237 Tellurium 123 Thin film growth, epitaxy Octacalcium phosphate 91 — by focused ion beam Organic alloys 115 — — of gallium arsenide 244 Subject index / Journal of Crystal Growth 140 (1994) 463-465 — by liquid phase epitaxy - — — of indium phosphide 1, 19 - — of gallium arsenide 28 — — — of lithium niobate 57 — of rare earth garnets 84 - - — of silicon dioxide 308, 315 by metalorganic molecular beam epitaxy - — — of zinc selenide 429 - of indium gallium arsenide 277 - — — theory of 33, 249 — of indium phosphide 277 Tin 237 by molecular beam epitaxy Titanium — of bismuth telluride 365 — boride 451 — of cadmium telluride 287 Triglycine sulphate 100 — of zinc telluride 282 by vapor phase epitaxy Vapor growth technique — through chemical vapor deposition ~ by chemical transport of diamond 454 ~ — of copper (aluminum gallium) sulphur selenide 388 of indium phosphide 291 — by evaporation and condensation theory of 191, 308 ~ — of tellurium 123 through evaporation and condensation -— — theory of 219 of bismuth strontium cuprate 65 through metalorganic chemical vapor deposition Yttrium of barium titanate 355 — aluminum garnet 349 of cadmium telluride 327 of gallium arsenide 299 Zinc of gallium indium arsenide 33 -— selenide 429 of indium gallium arsenide 432 — telluride 282

ebook img

Journal of Crystal Growth 1994: Vol 140 Index PDF

7 Pages·1994·1.2 MB·English
by  
#periodicals #sim_microfilm #pub_journal-of-crystal-growth
Save to my drive
Quick download
Download
Upgrade Premium
Most books are stored in the elastic cloud where traffic is expensive. For this reason, we have a limit on daily download.

Preview Journal of Crystal Growth 1994: Vol 140 Index

joverncor CRYSTAL GROWTH ELSEVIER Journal of Crystal Growth 140 (1994) 459-462 Author index Alberts, V., Influence of initial growth pa- ment chemical vapor deposition on posi- rameters on the structural and optical tively biased silicon substrates 140 (19944)5 4 properties of GaAs on (001) Si 140 (19942)9 9 Charlson, E.J., see Chao 140 (1994) 454 Alexiev, D., see Butcher 140 (1994) 9 Charlson, E.M., see Chao 140 (1994) 454 Anestiev, L., On the solute redistribution at Chen, F., see Kaito 140 (1994) 123 thermally activated phase transition pro- Chen, F., see Lu 140 (1994) 182 cesses. I. Theory 140 (1994) 167 Chen, S.D., L. Lin, X.Z. He, Z.Y. Xu, C.P. Anestiev, L., On the solute redistribution at Luo and J.Z. Xu, High-resolution photo- thermally activated phase transition pro- luminescence studies of (211) CdTe cesses. II. Applications 140 (1994) 175 grown on (211)B GaAs substrate 140 (1994) 287 Avramov, V.G., see Bikov 140 (1994) 100 Chen Yufei, see Hao 140 (1994) 441 Chichibu, S., S. Shirakata, A. Ogawa, R. Sudo, M. Uchida, Y. Harada, T. Bhat, H.L., see Venkataramanan 140 (1994) 336 Wakiyama, M. Shishikura, S$. Matsumoto Bikov, A.Z., V.G. Avramov, $.B. Damianova and S. Isomura, Growth of Cu(Al, and S.D. Stoichkov, Adsorption of Fe** Ga, _, )SSe pentenary alloy crystals by io- ions on the (001) face of a triglycine dine chemical vapor transport method 140 (19943)8 8 sulphate crystal; in situ investigation 140 (1964) 100 Chong, T.C., see Zeng 140 (1994) 148 Billia, B., see Minari 140 (19942)6 4 Conte, A., see Rajavel 140 (1994) 327 Boisvert, R.F., see Coriell 140 (1994) 139 Coriell, $.R., R.F. Boisvert, G.B. McFadden, Booker, G.R., see Philips 140 (1994) 249 L.N. Brush and J.J. Favier, Morphologi- Boyer, A., see Mzerd 140 (19943)6 5 cal stability of a binary alloy during direc- Braunstein, G., see Wernberg 140 (1994) 57 tional solidification: initial transient 140 (1994) 139 Bridenbaugh, P.M., see Laudise 140 (1994) 51 Brunthaler, G., see Ferreira 140 (1994) 282 Brush, L.N., see Coriell 140 (1994) 139 Damianova, S.B., see Bikov 140 (1994) 100 Bublik, V.T., A.K. Tkalich and M.L. Shupe- De Boer, R.C., P.H.M. van Loosdrecht and gin, Clusters of native point defects and H.L.M. Meekes, Identification of gaseous high-coercive state in films of Ca,Ge-sub- oxygen and nitrogen in bubble inclusions stituted magnetic garnet 140 (1994) 84 in Bi,GeO,), (BGO) crystals by means Butcher, K.S.A., D. Alexiev and T.L. Tans- of Raman spectroscopy 140 (1994) 361 ley, Lithium compensation of GaAs 140 (1994) 9 Dhanaraj, G., see Venkataramanan 140 (1994) 336 Dhanasekaran, R., see Qhalid Fareed 140 (1994) 28 Duncan, W.J., see Harlow 140 (1994) 19 Camel, D., see Favier 140 (1994) 237 Campbell, S.A., see Knutson 140 (1994) 191 Campbell, T.A. and J.N. Koster, Visualiza- Faschinger, W., see Ferreira 140 (1994) 282 tion of liquid—solid interface morpholo- Favier, J.J., see Coriell 140 (1994) 139 gies in gallium subject to natural convec- Favier, J.J., J.P. Garandet, A. Rouzaud and tion 140 (1994) 414 D. Camel, Mass transport phenomena Carlin, J.F., see Gailhanou 140 (1994) 205 during solidification in microgravity; pre- Carr, R.W., see Knutson 140 (1994) 191 liminary results of the first Mephisto Chao, C.H., G. Popovici, E.J. Charlson, E.M. flight experiment 140 (1994) 237 Charlson, J.M. Meese and M.A. Prelas, Ferreira, $.0., H. Sitter, W. Faschinger and Smooth diamond films grown by hot fila- G. Brunthaler, Growth of highly doped 460 Author index / Journal of Crystal Growth 140 (1994) 459-462 p-type ZnTe layers on GaAs using a ni- Iradi, T., see Laudise 140 (1994) 51 trogen DC plasma cell 140 (1994) 282 Ishizawa, Y., see Otani 140 (1994) 451 Franks, L.A., see Monchamp 140 (1994) 439 Isomura, S., see Chichibu 140 (1994) 388 Fujimura, N., see Nagai 140 (1994) 65 Isu, T., see Gotoda 140 (1994) 277 Fukuda, T., see Kang 140 (1994) 435 Ito, T., see Nagai 140 (1994) 65 Furukawa, Y., see Markgraf 140 (1994) 343 Furukawa, Y., see Mikami 140 (1994) 429 Johnson, M., see Watring 140 (1994) 41 Gailhanou, M., J.F. Carlin and U. Oesterle, X-ray diffraction analysis of low mis- Kaito, C., Y. Saito, T. Watanabe, K. Oh- match epitaxial layers grown on misori- tsuka, F. Chen and M. Nakamura, ented substrates 140 (1994) 205 Growth mechanism of ultrafine tellurium Garandet, J.P., see Favier 140 (1994) 237 particles produced by the gas evapora- Gauthier, F., see Lin 140 (1994) 72 tion method 140 (1994) 123 Gill, W.N., see Kim 140 (1994) 308 Kang, J., Y. Okano, K. Hoshikawa and T. Gill, W.N., see Kim 140 (19943)1 5 Fukuda, Influence of a high vertical mag- Gotoda, M., H. Sugimoto, Y. Nomura, T. netic field on Te dopant segregation in Isu, M. Nunoshita and S. Maruno, Selec- InSb grown by the vertical gradient freeze tively embedded growth by chemical method 140 (1994) 435 beam epitaxy for the fabrication of In Kang, W.N., see Yoon 140 (1994) 355 GaAs /InP double-heterostructure lasers 140 (1994) 277 Keller, B.P., S. Keller, H. Herrnberger, J. Gysling, H.J., see Wernberg 140 (1994) 57 Lenzner, S. Nilsson and W. Seifert, Com- positional gradients in Ga,In,_,As on patterned InP substrates grown by at- Han, Q. and J.D. Hunt, Particle pushing: the mospheric-pressure metalorganic vapour concentration of particles near a solid interface during downward flow 140 (1994) 398 phase epitaxy 140 (1994) 33 Keller, S., see Keller 140 (1994) 33 Han, Q. and J.D. Hunt, Particle pushing: the Keramidas, V.G., see Philips 140 (1994) 249 attachment of particles on the solid— liquid interface during fluid flow 140 (19944)0 6 Kim, E.J. and W.N. Gill, A new model for Han, T.J.P., see Sharp 140 (1994) 79 low pressure chemical vapor deposition of SiO, films by ozone augmented te- Hao Zhaoyin, He Yixing, Chen Yufei and traethoxysilane 140 (19943)0 8 Wang Derong, Nucleation and growth of diamond 140 (19944)4 1 Kim, E.J. and W.N. Gill, Analytical model Harada, Y., see Chichibu 140 (1994) 388 for chemical vapor deposition of SiO, Harbison, J.P., see Philips 140 (1994) 249 films using tetraethoxysilane and ozone 140 (19943)1 5 Kirkaldy, J.S., see Liu 140 (1994) 115 Harlow, M.J., W.J. Duncan, I.F. Lealman Knutson, K.L., R.W. Carr, W.H. Liu and and P.C. Spurdens, Chromium-doped S.A. Campbell, A kinetics and transport semi-insulating InP grown by metalor- ganic vapour phase epitaxy 140 (1994) 19 model of dichlorosilane chemical vapor He, X.Z., see Chen 140 (19942)8 7 deposition 140 (1994) 191 He Yixing, see Hao 140 (19944)4 1 Kobayashi, T., M. Ida and K. Kurishima, Henderson, B., see Sharp 140 (1994) 79 Effects of susceptor rotation speed and Herrnberger, H., see Keller 140 (1994) 33 total flow rate on selectivity in metalor- Hirano, M., see Zeng 140 (1994) 148 ganic chemical vapor deposition growth Hoffman, M.J., see Kramer 140 (1994) 157 techniques 140 (1994) 432 Hoshikawa, K., see Kang 140 (19944)3 5 Kong, Y., J. Wen and H. Wang, Dislocations Hunt, J.D., see Han 140 (19943)9 8 and subgrain boundaries in highly mag- Hunt, J.D., see Han 140 (19944)0 6 nesium-doped lithium niobate crystals 140 (1994) 45 Koster, J.N., see Campbell 140 (19944)1 4 Kramer, M., D. Wittmiiss, H. Kiippers, M.J. Ida, M., see Kobayashi 140 (1994) 432 Hoffmann and G. Petzow, Relations be- lijima, K., see lijima 140 (1994) 91 tween crystal structure and growth mor- lijima, M., K. lijima, Y. Moriwaki and Y. phology of B-Si,N, 140 (1994) 157 Kuboki, Oriented growth of octacalcium Kuboki, Y., see lijima 140 (1994) 91 phosphate crystals on type I collagen fib- Kumagai, H., see Zeng 140 (1994) 148 rils under physiological conditions 140 (1994) 91 Kiippers, H., see Kramer 140 (1994) 157 Illingworth, R., see Sharp 140 (1994) 79 Kurishima, K., see Kobayashi 140 (1994) 432 Author index / Journal of Crystal Growth 140 (1994) 459-462 Lagasse, R.R., Exceptionally large banded Mori, H., InP heteroepitaxy on Si substrates spherulites 140 (1994) 370 in In—PH ,-HCI-H, systems 140 (1994) 291 Laudise, R.A., P.M. Bridenbaugh and T. Moriwaki, Y., see lijima 140 (1994) 91 Iradi, Pressure balance under hydrother- Mzerd, A., D. Sayah, J.C. Tedenac and A. mal conditions 140 (1994) 51 Boyer, Optimal crystal growth conditions Lealman, I.F., see Harlow 140 (1994) 19 of thin films of Bi,Te, semiconductors 140 (1994) 365 Lee, B.T. and R.A. Logan, Growth of InP on etched grooves using atmospheric pres- Nagai, S., N. Fujimura, H. Tanaka and T. sure metalorganic vapor phase epitaxy 140 (1994) 1 Ito, (115)Bi,Sr,CuO, epitaxial films on Lenzner, J., see Keller 140 (1994) 33 (110)SrTiO, by solid phase epitaxy 140 (1994) 65 Liang, W.Y., see Lin 140 (1994) 72 Nakamura, M., see Kaito 140 (1994) 123 Lim, L.C., see Zeng 140 (1994) 148 Nanev, Chr.N., Critical size of crystals grow- Lin, C. and A.F. Witt, Decoration of disloca- ing under diffusion conditions for loss of tions in Bi,»SiO.) crystals by annealing polyhedral stability 140 (1994) 381 in a reducing atmosphere 140 (19944)4 4 Nilsson, S., see Keller 140 (1994) 33 Lin, C.T., W. Zhou, A.P. Mackenzie, F. Nobe, Y., see Sugimoto 140 (1994) 349 Gauthier and W.Y. Liang, Flux growth of Noda, Y., see Mikami 140 (1994) 429 Sr, _,Ca,CuO, single crystals 140 (1994) 72 Nomura, Y., see Gotoda 140 (1994) 277 Lin, L., see Chen 140 (1994) 287 Norman, A.G., see Philips 140 (1994) 249 Liu, L.X. and J.S. Kirkaldy, Systematics of Nunoshita, M., see Gotoda 140 (1994) 277 thin film cellular dendrites and the cell- to-dendrite transition in succinonitrile- Oesterle, U., see Gailhanou 140 (19942)0 5 salol, succinonitrile—acetone and pivalic Ogawa, A., see Chichibu 140 (19943)8 8 acid—ethanol 140 (1994) 115 Ohshima, N., see Pak 140 (19942)4 4 Liu, W.H., see Knutson 140 (1994) 191 Ohtsuka, K., see Kaito 140 (1994) 123 Logan, R.A., see Lee 140 (1994) 1 Okano, Y., see Kang 140 (1994) 435 Louchev, O.A., Diffusion, heat transfer, Otani, S. and Y. Ishizawa, Preparation of equilibrium molecular density and kinetic TiB, single crystals by the floating zone mechanism of morphological instability method 140 (1994) 451 in physical vapor deposition 140 (19942)1 9 Lu, J.W. and F. Chen, Instability-mode com- Pak, K., I. Saitoh, N. Ohshima and H. petition due to change of partition coeffi- Yonezu, In-situ maskless selective area cient of binary alloy unidirectionally so- epitaxy of GaAs using a low-energy Ga lidified from below 140 (1994) 182 focused ion beam 140 (1994) 244 Luo, C.P., see Chen 140 (1994) 287 Park, K.-S., see Mikami 140 (1994) 429 Petzow, G., see Kramer 140 (1994) 157 Mackenzie, A.P., see Lin 140 (1994) 72 Philips, B.A., AG. Norman, T.Y. Seong, S. Mahajan, S., see Philips 140 (1994) 249 Mahajan, G.R. Booker, M. Skowronski, MareS, J.J., see Sestakova 140 (1994) 426 J.P. Harbison and V.G. Keramidas, Markgraf, S.A., Y. Furukawa and M. Sato, Mechanism for CuPt-type ordering in Top-seeded solution growth of LiB,O, 140 (1994) 343 mixed III-V epitaxial layers 140 (1994) 249 Maruno, S., see Gotoda 140 (1994) 277 Popovici, G., see Chao 140 (1994) 454 Matsumoto, S., see Chichibu 140 (1994) 388 Prelas, M.A., see Chao 140 (1994) 454 McFadden, G.B., see Coriell 140 (1994) 139 Meekes, H.L.M., see De Boer 140 (1994) 361 Qhalid Fareed, R.S., R. Dhanasekaran and Meese, J.M., see Chao 140 (1994) 454 P. Ramasamy, Investigation on the con- Mihalik, G.B., see Monchamp 140 (1994) 439 centration profiles of As during the cur- Mikami, M., K.-S. Park, Y. Noda and Y. rent-controlled liquid phase epitaxial Furukawa, Radical-assisted metalorganic growth of GaAs 140 (1994) 28 chemical vapor deposition of ZnSe 140 (1994) 429 Minari, F. and B. Billia, Mixed cells in direc- Rajavel, D., A. Conte and C.J. Summers, tional solidification of In-doped GaAs; Pyrolysis characteristics of iodine precur- cellular profile and shape-induced sors for gas source n-type doping of II-VI stresses 140 (1994) 264 compounds 140 (1994) 327 Monchamp, R.R., G.B. Mihalik and L.A. Ramasamy, P., see Qhalid Fareed 140 (1994) 28 Franks, Octagonal crystals of strontium Riesz, F., Rotated tilting in lattice-mis- barium niobate (SBN : 61) 140 (1994) 439 matched heteroepitaxial systems 140 (1994) 213 462 Author index / Journal of Crystal Growth 140 (1994) 459-462 Rodriguez-Clemente, R., see Sangwal 140 (1994) 447 Uchida, M., see Chichibu 140 (1994) 388 Rouzaud, A., see Favier 140 (1994) 237 Uda, S., Influence of unit cluster size on nucleation rate of Li,B,O, melt 140 (1994) 128 Saito, Y., see Kaito 140 (1994) 123 Saitoh, I., see Pak 140 (1994) 244 Van Loosdrecht, P.H.M., see De Boer 140 (1994) 361 Veintemillas-Verdaguer, S., see Sangwal 140 (1994) 447 Sangwal, K., S. Veintemillas-Verdaguer, J. Venkataramanan, V., G. Dhanaraj and H.L. Torrent-Burgués and R. Rodriguez-Cle- Bhat, Growth mechanism, dislocation mente, Decoration of growth and disso- etching and mechanical properties of L- lution steps on the surfaces of L-arginine phosphate monohydrate crystals 140 (1994) 447 arginine phosphate and deuterated L- Sato, M., see Markgraf 140 (1994) 343 arginine phosphate 140 (1994) 336 Sayah, D., see Mzerd 140 (1994) 365 Wakiyama, T., see Chichibu 140 (19943)8 8 Seifert, W., see Keller 140 (1994) 33 Wang Derong, see Hao 140 (19944)4 1 Seong, T.Y., see Philips 140 (1994) 249 Wang, H., see Kong 140 (1994) 45 Sestak, J., see Sestaékova 140 (1994) 426 Watanabe, T., see Kaito 140 (1994) 123 Sestakova, V., B. Stépanek, J.J. Mare’ and J. Watring, D.A. and M. Johnson, Ampoule Sestak, Hydrogen passivation of residual failure sensor development for semicon- acceptors in GaSb single crystals 140 (1994) 426 ductor crystal growth experiments 140 (1994) 41 Sharp, J.H., T.J.P. Han, B. Henderson and Wen, J., see Kong 140 (1994) 45 R. Illingworth, Instability in the growth Wernberg, A.A., H.J. Gysling and G. Braun- of Ti: Al,O, single-crystal fibres 140 (1994) 79 stein, Single crystalline growth of LiNbO, Shirakata, S., see Chichibu 140 (1994) 388 on LiTaO, by spray metalorganic chemi- Shishikura, M., see Chichibu 140 (1994) 388 cal vapor deposition using the single Shupegin, M.L., see Bublik 140 (1994) 84 source precursor LiNb(OEt), 140 (1994) 57 Sitter, H., see Ferreira 140 (1994) 282 Witt, A.F., see Lin 140 (19944)4 4 Skowronski, M., see Philips 140 (1994) 249 Wittmiiss, D., see Kramer 140 (1994) 157 Spurdens, P.C., see Harlow 140 (1994) 19 Stépanek, B., see Sestakova 140 (1994) 426 Xu, J.Z., see Chen 140 (1994) 287 Stoichkov, $.D., see Bikov 140 (1994) 100 Xu, Z.Y., see Chen 140 (1994) 287 Sudo, R., see Chichibu 140 (1994) 388 Yamagishi, K., see Sugimoto 140 (19943)4 9 Sugimoto, A., Y. Nobe and K. Yamagishi, Yom, S.S., see Yoon 140 (1994) 355 Crystal growth and optical characteriza- Yonezu, H., see Pak 140 (1994) 244 tion of Cr,Ca: Y,Al,;0;5 140 (1994) 349 Yoon, Y.K., see Yoon 140 (1994) 355 Sugimoto, H., see Gotoda 140 (1994) 277 Yoon, Y.S., Y.K. Yoon, W.N. Kang and S.S. Summers, C.J., see Rajavel 140 (1994) 327 Yom, Analysis of the formation of BaTiO, island deposited on (111) InSb Tanaka, H., see Nagai 140 (1994) 65 by metalorganic chemical vapor deposi- Tansley, T.L., see Butcher 140 (1994) 9 tion at low temperature 140 (1994) 355 Tedenac, J.C., see Mzerd 140 (19943)6 5 Tkalich, A.K., see Bublik 140 (1994) 84 Zeng, H.C., T.C. Chong, L.C. Lim, H. Ku- Torrent-Burgués, J., The Gibbs energy and magai and M. Hirano, Pseudo-dendritic the driving force at crystallization from growth in lead molybdate single crystal solution 140 (1994) 107 by Czochralski technique 140 (1994) 148 Torrent-Burgués, J., see Sangwal 140 (1994) 447 Zhou, W., see Lin 140 (1994) 72 NH, journo CRYSTAL GROWTH ELSEVIER Journal of Crystal Growth 140 (1994) 463-465 Subject index Alloys Copper — binary 139 ~ (aluminum gallium) sulphur selenide 388 - of copper (aluminum gallium) sulphur selenide 388 — organic 115 Alumina 79 Dendritic growth Aluminum ~ of lead molybdate 148 ~— arsenide 205 ~ of organic alloys 115 Apatite 91 ~ theory of 398, 406 Apparatus Deuterated L-arginine phosphate 336 — for melt growth Device characterization — — by focused ion beam ~ double heterostructures 277 - — — of gallium arsenide 244 ~ electronic materials 9, 308 - for miscellaneous purposes — lasers 19, 277, 282, 287 Diamond 441, 454 ~ — ampoule failure sensor 41 ~ — growth in high magnetic fields 435 Diffusional control Arginine ~ of arsenic in gallium arsenide 28 - (L) phosphate monohydrate 336, 447 ~ of crystal growth, theory of 381 ~ of lithium in gallium arsenide 9 ~ (L) phosphate monohydrate, deuterated 336 Dissolution ~ of L-arginine phosphate monohydrate 447 Barium — titanate 355 Bismuth Electronic materials, see Device characterization germanium oxide 361 Epitaxy, see Thin film growth silicate 444 Etching strontium cuprate 65 ~ chemical 45, 277, 336, 444, 447 telluride 365 Eutectic growth ~ of silver—copper 175 Cadmium — telluride 287, 327 Gallium 414 Calcium — antimonide 426 — phosphate 91 — arsenide 9, 28, 205, 244, 264, 299 Cellular growth — indium arsenide 33 — of gallium arsenide 264 Garnets 84, 349 — theory of 398, 406 Characterization Indium — of bubbles in bismuth germanium oxide 361 — antimonide 435 — of heteroepitaxial systems 213 — gallium arsenide 277, 432 - X-ray diffraction analysis of III-V compounds 205 ~ phosphide 1, 19, 277, 291 Computer simulation of chemical vapor deposition 191 of concentration profiles 28 Kinetics of nucleation rate 128 — of growth 1, 33, 100, 167, 175, 191, 308, 315, 444 of silicon nitride 157 - of interface control 219 Convection 182, 237, 308, 315, 398, 406, 414, 435 -— of nucleation 128, 299 464 Subject index / Journal of Crystal Growth 140 (1994) 463-465 Lasers, see Device characterization Particles (solid) Lasers, crystals for — attachment to interface 406 — yttrium aluminum garnet 349 — concentration 398 Lead Phase diagrams — molybdate 148 — of silver—copper 175 Lithium — of water 51 — borate 128 Potassium — niobate 45, 57 — titanyl phosphate 51 — triborate 343 Precursor — for cadmium telluride 327 — for gallium indium arsenide 33 Maleic anhydride 370 — for II-VI compounds 327 Melt growth technique — by Bridgman-Stockbarger method — of bismuth telluride 365 Rare earth by Czochralski method — garnets 84 — of bismuth silicate 444 of gallium antimonide 426 Silicon 191 of gallium arsenide 264 — dioxide 308, 315 of lead molybdate 148 — nitride 157 of lithium niobate 45 Silver of strontium barium niobate 439 — copper 175 of yttrium aluminum garnet 349 Solid growth technique by floating zone method — by recrystallization — of titanium boride 451 -— — of diamond 441 — of yttrium aluminum garnet 349 Solution growth technique by pedestal growth method — by flux method — of alumina 79 — — of lithium triborate 343 by uniaxial solidification -— — of strontium calcium cuprate 72 — of gallium 414 by gel method — of organic alloys 115 — — of maleic anhydride 370 — theory of 182 — by hydrothermal growth by vertical gradient freeze method - — of potassium titanyl phosphate 51 — of indium antimonide 435 by low temperature method theory of 237 - of L-arginine phosphate monohydrate 336, 447 Microgravity, growth under — of deuterated L-arginine phosphate 336 — of tin 237 — of octacalcium phosphate 91 Morphological stability — of triglycine sulphate 100 of binary alloy during directional solidification 139 theory of 107 of gallium arsenide 264 Stefan problem or moving boundary problem of tin 237 - of binary alloy 139 in physical vapor deposition 219 — of cell formation 264 theory of 381 Strontium — barium niobate 439 - calcium cuprate 72 Nucleation Superlattices, multilayers — of diamond 441 — of .II-V compounds 205 — of lithium borate 128 Surface energy, determination — of tellurium 123 — of silicon nitride 157 Numbers — of triglycine sulphate 100 — Grashof 237, 414 Surface structure — Peclet 237 — of silicon nitride 157 — Rayleigh 237, 414 — Schmidt 237 Tellurium 123 Thin film growth, epitaxy Octacalcium phosphate 91 — by focused ion beam Organic alloys 115 — — of gallium arsenide 244 Subject index / Journal of Crystal Growth 140 (1994) 463-465 — by liquid phase epitaxy - — — of indium phosphide 1, 19 - — of gallium arsenide 28 — — — of lithium niobate 57 — of rare earth garnets 84 - - — of silicon dioxide 308, 315 by metalorganic molecular beam epitaxy - — — of zinc selenide 429 - of indium gallium arsenide 277 - — — theory of 33, 249 — of indium phosphide 277 Tin 237 by molecular beam epitaxy Titanium — of bismuth telluride 365 — boride 451 — of cadmium telluride 287 Triglycine sulphate 100 — of zinc telluride 282 by vapor phase epitaxy Vapor growth technique — through chemical vapor deposition ~ by chemical transport of diamond 454 ~ — of copper (aluminum gallium) sulphur selenide 388 of indium phosphide 291 — by evaporation and condensation theory of 191, 308 ~ — of tellurium 123 through evaporation and condensation -— — theory of 219 of bismuth strontium cuprate 65 through metalorganic chemical vapor deposition Yttrium of barium titanate 355 — aluminum garnet 349 of cadmium telluride 327 of gallium arsenide 299 Zinc of gallium indium arsenide 33 -— selenide 429 of indium gallium arsenide 432 — telluride 282

See more

The list of books you might like

Upgrade Premium
Most books are stored in the elastic cloud where traffic is expensive. For this reason, we have a limit on daily download.
DMCA & Copyright: Dear all, most of the website is community built, users are uploading hundred of books everyday, which makes really hard for us to identify copyrighted material, please contact us if you want any material removed.
Copyright @ PDFdrive.to, 2022 | We love our users