Journal of Crystal Growth 1994: Vol 135 Index

10 Pages·1994·2.7 MB·English

Journal of Crystal Growth 135 (1994) 648-653 jousrsror CRYSTAL
North-Holland GROWTH
Author index
Abe, K., See Ono 135 (1994) 359 InSb on GaAs with trimethylantimony
Abramof, E., W. Faschinger, H. Sitter and and triethylantimony as Sb precursors 135 (1994) 434
A. Pesek, Short period CdTe(ZnTe)/ Balokrys, S.P., see Oseledchik 135 (1994) 373
MnTe superlattices: growth and charac- Ben Hadid, H., see Kaddeche 135 (1994) 341
terization 135 (1994) 447 Bennema, P., see Liu 135 (1994) 209
Agrawal, N., see Reier 135 (1994) 463 Beserman, R., see Maayan 135 (1994) 23
Aindow, M., See Cheng 135 (1994) 409 Bettahi, A. and J. Marfaing, Early stage of
Al-Bassam, A.A.I., A.A. Al-Juffali and A.M. microstructure formation in thick super-
Al-Dhafiri, Structure and lattice parame- conducting YBa,Cu,0,_; films; depen-
ters of cadmium sulphide selenide dence on the sintering conditions and the
(Cd,SS e , _,) mixed crystals 135 (1994) 476 substrate type 135 (1994) 487
Al-Dhafiri, A.M., see Al-Bassam 135 (1994) 476 Betzel, C., see Hennig 135 (19945)1 3
Al-Juffali, A.A., see Al-Bassam 135 (1994) 476 Biefeld, R.M. and K.C. Baucom, Substrate
Alexiev, D., K.S.A. Butcher, M. Edmondson orientation and surface morphology im-
and T.L. Tansley, Thermal annealing of provements for InSb grown by metalor-
liquid phase epitaxial gallium arsenide 135 (1994) 367 ganic chemical vapor deposition 135 (19944)0 1
Anan, T., see Li 135 (1994) 78 Bishop, S.P., see DeLucas 135 (19941)8 3
Anderson, M., see Piffault 135 (1994) 11 Boistelle, R., see Vessler 135 (19945)0 5
Anderson, P.L., A. Erbil, C.R. Nelson, G.S. Bowen, P., see Rubattel 135 (19941)3 5
Tompa and K. Moy, A high-speed, rotat- Bowersox, K.D., see DeLucas 135 (19941)8 3
ing-disc metalorganic chemical vapor de- Bray, T.L., see DeLucas 135 (19941)8 3
position system for the growth of Brown, C.M., F. Novin and D.L. Purich,
(Hg,Cd)Te and related alloys 135 (1994) 383 © Calcium oxalate crystal morphology: in-
Andersson, T.G., see Wang 135 (1994) 455 fluence of phospholipid micelles with
Anzai, Y., see Imoto 135 (1994) 279 compositions based on each leaflet of the
Arai, Y., see Ono 135 (1994) 359 erythrocyte membrane 135 (19945)2 3
Arnold, E., see DeLucas 135 (1994) 183 Brown, W.E., see Markovié 135 (19945)3 3
Arnold, E., see Schall 135 (1994) 548 Bublik, V., see Charniy 135 (19943)0 2
Astles, M.G., see Cheng 135 (1994) 409 Bugg, C.E., see DeLucas 135 (19941)8 3
Auld, J., see Jones 135 (1994) 285 Bullough, T.J., see Joyce 135 (1994) 31
Ausloos, M., see Cloots 135 (1994) 496 Butcher, K.S.A., see Alexiev 135 (19943)6 7
Ayers, J.E., The measurement of threading Button, C.C., see Roberts 135 (19943)6 5
dislocation densities in semiconductor
crystals by X-ray diffraction 135 (1994) 71
Cadoret, R., see Piffault 135 (1994) 11
Baetzold, R.C. and J. Mir, A computational Carson, M., see DeLucas 135 (1994) 183
model for growth of (100) SrTiO, and Carter, D., see DeLucas 135 (1994) 183
(001) YBa,Cu,O, oxide films 135 (1994) 145 Chai, W.P., Y.S. Gu, M. Li, Z.H. Mai, Q.Z.
Bahir, G., see Maayan 135 (1994) 23 Li, L. Yuan and S.J. Pang, Orientation
Baker, E.S., see DeLucas 135 (1994) 183 influence of cubic boron nitride crystal
Balkanski, M., see Le 135 (1994) 1 facets on the epitaxial growth of diamond
Balzuweit, K. and W.J.P. van Enckevort, film by microwave plasma chemical vapor
Surface studies on the five-fold facets of deposition 135 (1994) 639
Al-—Cu-—Fe quasicrystals 135 (1994) 297 Charniy, L. and V. Bublik, The influence of
Barnett, S.A., see Hultman 135 (1994) 309 GaAs crystal composition on the features
Baucom, K.C., see Biefeld 135 (1994) 401 of matrix microdefects 135 (1994) 302
Behet, M., B. Stoll and K. Heime, Compara- Chen, Guang, see Tu 135 (1994) 636
tive study on the low pressure metalor- Chen Lizue, see Hao 135 (1994) 370
ganic vapor phase epitaxial growth of Chen, W.Q., see Wang 135 (1994) 455
Author index 649
Chen Yufei, see Hao 135 (1994) 370 Diko, P., see Cloots 135 (19944)9 6
Cheng, T.T., M. Aindow, IP. Jones, J.E. Ding, J., see DeLucas 135 (19941)8 3
Hails, D.J. Williams and M.G. Astles, Docherty, R., see Clydesdale 135 (19943)3 1
The influence of substrate surface prepa- Doi, Y., see lijima 135 (19942)2 9
ration on the microstructure of CdTe Dunbar, B.J., see DeLucas 135 (19941)8 3
grown on (001) GaAs by metalorganic Duval, W.M.B., see Singh 135 (19946)1 9
chemical vapour deposition 135 (1994) 409 Duvigneaud, P.H., see Cloots 135 (19944)9 6
Chew, A., see Roberts 135 (1994) 365
Chiang, T.Y., E.H. Liu and T.R. Yew, Low Eastman, L.F., see Teng 135 (1994) 36
temperature GaAs epitaxial growth on Eddrief, M., see Le 135 (1994) 1
Si(100) by molecular beam epitaxy and Edmonson, M., see Alexiev 135 (1994) 367
the post-growth rapid thermal annealing 135 (1994) 469 Einspahr, H.M., see DeLucas 135 (1994) 183
Chiu, T.H., see Tsang 135 (1994) 377 Eisenbach, A., E. Kuphal, K. Miethe and
Clancy, L.L., see DeLucas 135 (1994) 183 H.L. Hartnagel, Sn-doped InGaAs layers
Clark, Jr., A.D., see DeLucas 135 (1994) 183 grown by low-pressure metalorganic
Clark, S.A., see Piffault 135 (1994) 11 vapour phase epitaxy 135 (1994) 129
Cloots, R., S. Stassen, A. Rulmont, P.A. Erbil, A., see Anderson 135 (1994) 383
Godelaine, P. Diko, P.H. Duvigneaud and Erdei, S., Growth of oxygen deficiency-free
M. Ausloos, Crystallization process in YVO, single crystal by top-seeded solu-
Pb-free or Pb-doped Bi,_,Pb,Sr,Ca, tion growth technique (E) 135 (1994) 646
Cu,O0j;9_, glass system 135 (1994) 496 Eyal, A., see Maayan 135 (1994) 23
Clydesdale, G., K.J. Roberts and R.
Docherty, Modelling the morphology of
Fashinger, W., see Abramof 135 (19944)4 7
molecular crystals in the presence of dis-
Fearheiley, M.L., see Schon 135 (19946)0 1
ruptive tailor-made additives 135 (19943)3 1
Fiechter, S., see Schon 135 (19946)0 1
Cody, A.M. and R.D. Cody, Calcium oxalate
Finzel, B.C., see DeLucas 135 (19941)8 3
trihydrate phase control by structurally-
Fitz Gerald, J.D., see Taylor 135 (19941)5 7
specific carboxylic acids 135 (1994) 235
Fowler, B.O., see Markovié 135 (19945)3 3
Cody, R.D., see Cody 135 (1994) 235
Franse, J.J.M., see Li 135 (19944)8 1
Cook, P.F., see DeLucas 135 (1994) 183
Fujii, 1., see Sakata 135 (19945)5 5
Critchlow, G.W., see Jones 135 (1994) 285
Fujiwara, Y., see Takahashi 135 (1994) 61
Fukuda, T., see Kang 135 (19946)2 3
De Maeyer, E.A.P., R.M.H. Verbeeck and
D.E. Naessens, Optimalization of the Gaines, D.F., see Redwing 135 (1994) 423
preparation of Na*- and Co?~ -contain- Gebhardt, W., see Wolf 135 (1994) 113
ing hydroxyapatite by the hydrolysis of Gil, E., see Piffault 135 (1994) 11
monetite 135 (1994) 539 Gobbels, M., see Markgraf 135 (1994) 253
DeLucas, L.J.. M.M. Long, K.M. Moore, Godelaine, P.A., see Cloots 135 (1994) 496
W.M. Rosenblum, T.L. Bray, C. Smith, Goswami, D.P. and M.L. Kalra, A new ap-
M. Carson, S.V.L. Narayana, M.D. Har- proach to molecular synthesis and crystal
rington, D. Carter, A.D. Clark, Jr., R.G. growth of one-dimensional organic charge
Nanni, J. Ding, A. Jacobo-Molina, G. transfer complex TTF—TCNQ 135 (1994) 196
Kramer, S.H. Hughes, E. Arnold, H.M. Goto, T., see lijima 135 (1994) 229
Einspahr, L.L. Clancy, G.S.J. Rao, P.F. Grote, N., see Reier 135 (1994) 463
Cook, B.G. Harris, $S.H. Munson, B.C. Gu, Y.S., see Chai 135 (1994) 639
Finzel, A. McPherson, P.C. Weber, F.A.
Lewandowski, T.L. Nagabhushan, P.P. Hails, J.E., see Cheng 135 (1994) 409
Trotta, P. Reichert, M.A. Navia, K.P. Hamacher, R.D., see Singh 135 (1994) 619
Wilson, J.A. Thomson, R.N. Richards, Handa, S., see Mochizuki 135 (1994) 259
K.D. Bowersox, C.J. Meade, E.S. Baker, Hao Zhaoyin, Chen Yufei and Chen Lizue,
S.P. Bishop, B.J. Dunbar, E. Trinh, J. Relation between recrystallized graphite
Prahl, A. Sacco, Jr. and C.E. Bugg, Re- and diamond growth 135 (1994) 370
cent results and new hardware develop- Harde, P., see Reier 135 (1994) 463
ments for protein crystal growh in micro- Harrington, M.D., see DeLucas 135 (1994) 183
gravity 135 (1994) 183 Harris, B.G., see DeLucas 135 (1994) 183
DeWitt, R., see Singh 135 (1994) 619 Harris, S., Effects of impurity doping on
Diesner, K., see Sch6n 135 (1994) 601 terrace width stability 135 (1994) 354
650 Author index
Hartnagel, H.L., see Eisenbach 135 (1994) 129 Jones, H., see Liang 135 (1994) 561
Heime, K., see Behet 135 (1994) 434 Jones, I.P., see Cheng 135 (1994) 409
Heinke, H., M.O. Mdller, D. Hommel and Joyce, T.B., T. Pfeffer, T.J. Bullough and
G. Landwehr, Relaxation and mosaicity A.C. Jones, Metalorganic sulphur sources
profiles in epitaxial layers studied by high for the doping of GaAs grown by chemi-
resolution X-ray diffraction 135 (1994) 41 cal beam epitaxy 135 (1994) 31
Heinke, H., A. Waag, M.O. Miller, M.M.
Regnet and G. Landwehr, Unusual strain
in homoepitaxial CdTe(001) layers grown Kaddeche, S., H. Ben Hadid and D. Henry,
by molecular beam epitaxy 135 (1994) 53 Macrosegregation and convection in the
Hennig, M., M. Visanji, W. Weber, H. horizontal Bridgman configuration. I. Di-
Janczikowski, A. Plaas-Link and C. Bet- lute alloys 135 (1994) 341
zel, COSIMA -— protein crystal growth Kalra, M.L., see Goswami 135 (1994) 196
facility for automatic processing on un- Kamemizu, H., see lijima 135 (1994) 229
manned satellites 135 (1994) 513 Kanaya, M., see Takahashi 135 (1994) 61
Henry, D., see Kaddeche 135 (1994) 341 Kang, J., K. Hoshikawa, M. Tajima and T.
Hien, N.T., see Li 135 (1994) 481 Fukuda, Effect of application of a mag-
Hommel, D., see Heinke 135 (1994) 41 netic field during crystal growth on the
Hoshikawa, K., see Kang 135 (1994) 623 photoluminescence characteristics of
Huang, J.K., Y.S. Huang and T.R. Yang, Ge-doped liquid encapsulated Czochral-
The preparation and characterization of ski grown GaAs 135 (19946)2 3
RuTe, single crystals 135 (1994) 224 Kapre, R.M., see Tsang 135 (19943)7 7
Huang, Y.S., see Huang 135 (1994) 224 Karczewski, G., see Leszczynski 135 (19945)6 5
Huang, Yidong, see Tu 135 (1994) 636 Kastner, M., see Wolf 135 (19941)1 3
Hughes, S.H., see DeLucas 135 (1994) 183 Kato, J., see Sazaki 135 (19941)9 9
Hultman, L., M. Shinn, P.B. Mirkarimi and Kes, P.H., see Li 135 (19944)8 1
S.A. Barnett, Characterization of misfit Kida, M., see Ono 135 (19943)5 9
dislocations in epitaxial (001)-oriented Kimoto, K., see Mochizuki 135 (19943)1 8
TiN, NbN, VN, and (Ti,Nb)N film het- Kimura, M., see Tanaka 135 (19942)6 9
erostructures by transmission electron Kimura, S., see Markgraf 135 (19942)5 3
microscopy 135 (1994) 309 Kimura, S., see Imoto 135 (19942)7 9
Hwang, N.M., Thermodynamic analysis of Kohda, H. and K. Wada, A new model for
the chemical vapor deposition of dia- carbon doping in GaAs — effect of the
mond in the C-H, C-O and C-H-O methyl radical 135 (19946)2 9
systems 135 (1994) 165 Korol, A.S., see Oseledchik 135 (19943)7 3
Kou, S., see Lin 135 (19946)4 3
Kramer, G., see DeLucas 135 (19941)8 3
lijima, H., H. Kamemizu, N. Wakamatsu, T.
Kreinin, O., see Maayan 135 (1994) 23
Goto, Y. Doi and Y. Moriwaki, Effects of
Krikunov, S.A., see Oseledchik 135 (19943)7 3
CO?~ ion on the formation of octacal-
Kruger, D., G. Lippert, R. Kurps and H.J.
cium phosphate at pH 7.4 and 37°C 135 (1994) 229
Osten, Lateral inhomogeneous boron
lishi, K., see Sakata 135 (1994) 555
segregation during silicon thin film
Imoto, S., S. Kimura, Y. Anzai and Y.
growth with molecular beam epitaxy 135 (19942)4 6
Kuwano, Physical properties of the
Kub, J., see Stépanek 135 (19942)9 0
BaB,O, melt 135 (1994) 279
Kuech, T.F., see Redwing 135 (19944)2 3
Itoyama, W., see Sakata 135 (1994) 555
Kuhn, W., see Wolf 135 (19941)1 3
Iwasa, I., see Ota 135 (1994) 646
Kuphal, E., see Eisenbach 135 (19941)2 9
Kurps, R., see Kriiger 135 (19942)4 6
Jacobo-Molina, A., see DeLucas 135 (1994) 183 Kuwano, Y., see Imoto 135 (19942)7 9
Jahn, E., see Reier 135 (1994) 463
Janczikowski, H., see Hennig 135 (1994) 513
Jie, W., see Liang 135 (1994) 561 Lacmann, R., see Meyer 135 (1994) 571
Jones, A.C., see Joyce 135 (1994) 31 Lan, C.W., Thermal-capillary analysis of
Jones, A.C., J. Auld, S.A. Rushworth and floating-zone growth of tube crystals:
G.W. Critchlow, Growth of aluminium steady-state and conduction dominated
films by low pressure chemical vapour calculations 135 (1994) 606
deposition using tritertiarybutylalu- Landwehr, G., see Heinke 135 (1994) 41
minium 135 (1994) 285 Landwehr, G., see Heinke 135 (1994) 53
=
Author index 651
Le Thanh Vinh, M. Eddrief, C. Sébenne, A. Mazelsky, R., see Singh 135 (1994) 619
Sacuto and M. Balkanski, Heteroepitaxy Mazuelas, A. and A. Ruiz, Growth and char-
of GaSe layered semiconductor com- acterization by X-ray diffraction of
pound on Si(117)7 x 7 substrate: a Van GaP /InP short-period superlattices 135 (1994) 123
der Waals epitaxy? 135 (1994) 1 McCay, M.H. and T.D. McCay, The influ-
Lee, A.K.K., see Yeboah 135 (1994) 323 ence of microgravity on the dendritic
Lemaitre, J., see Rubattel 135 (1994) 135 growth rates of NH,CI—-H,O: an interna-
Leszcezynski, M., A. Szczerbakow and G. tional microgravity laboratory experiment 135 (1994) 594
Karczewski, The properties of (Pb,Ge)Te McCay, T.D., see McCay 135 (1994) 594
single crsytals grown from the vapour McPherson, A., DeLucas 135 (1994) 183
phase 135 (1994) 565 Meade, C.J., see DeLucas 135 (1994) 183
Lewandowski, F.A., see DeLucas 135 (1994) 183 Menovsky, A.A., see Li 135 (1994) 481
Leymarie, J., see Piffault 135 (1994) 11 Meyer, H.-J., R. Lacmann and H. Zimmer-
Li, M., see Chai 135 (1994) 639 mann, Random space filling by nucle-
Li, Q.Z., see Chai 135 (1994) 639 ation and growth 135 (1994) 571
Li, T.W., P.H. Kes, N.T. Hien, J.J.M. Franse Miethe, K., see Eisenbach 135 (1994) 129
and A.A. Menovsky, Growth of Bi,Sr, Mir, J., see Baetzold 135 (1994) 145
CaCu,O,,, single crystals at different Mirkarimi, P.B., see Hultman 135 (1994) 309
oxygen ambient pressures 135 (1994) 481 Mochizuki, K., K. Masumoto, T. Yasuda, Y.
Li, W., T. Anan and L.J. Schowalter, Opti- Segawa and K. Kimoto, Sublimation
mization of GaAs epitaxy on CaF,/ growth of high-purity ZnSe single crystals
Si(111) substrates 135 (1994) 78 and photoluminescence 135 (1994) 318
Liang, D., W. Jie and H. Jones, The effect of Mochizuki, Y., T. Takada, T. Sakuma, S.
growth velocity on primary spacing of Handa, C. Sasaoka and A. Usui, Theo-
Al,Fe dendrites in hypereutectic Al—Fe retical study of the Cl desorption reac-
alloys 135 (1994) 561 tion induced by H, in the chloride atomic
Lin, M.H. and S. Kou, Further report on layer epitaxy 135 (19942)5 9
dopant segregation control in Czochral- Moller, M.O., see Heinke 135 (1994) 41
ski crystal growth with a wetted float 135 (1994) 643 Monier, C., see Piffault 135 (1994) 11
Lippert, G., see Kruger 135 (1994) 246 Moore, K.M., see DeLucas 135 (19941)8 3
Liu, E.H., see Chiang 135 (1994) 469 Moriwaki, Y., see lijima 135 (19942)2 9
Liu, X.Y. and P. Bennema, On the morphol- Moy, K., see Anderson 135 (19943)8 3
ogy of crystals of triclinic even normal Miller, M.O., see Heinke 135 (1994) 53
alkanes: theory and observation 135 (1994) 209 Munson, S.H., see DeLucas 135 (19941)8 3
Long, M.M., see DeLucas 135 (1994) 183
Luo, Zundu, see Tu 135 (1994) 636 Naessens, D.E., see De Maeyer 135 (19945)3 9
Nagabhushan, T.L., see DeLucas 135 (19941)83
Nanni, R.G., see DeLucas 135 (19941)8 3
Maayan, E., O. Kreinin, G. Bahir, J. Salz-
Narayana, S.V.L., see DeLucas 135 (19941)8 3
man, A. Eyal and R. Beserman, Selective
growth of GaAs /InGaP heterostructures Naumov, A., see Wolf 135 (19941)1 3
Navia, M.A., see DeLucas 135 (19941)8 3
by photo-enhanced organometallic chem-
ical vapor deposition 135 (1994) 23 Nelson, C.R., see Anderson 135 (19943)8 3
Mai, Z.H., see Chai 135 (1994) 639 Nishinaga, T., see Shen 135 (1994) 85
Mandeville, P., see Teng 135 (1994) 36 Novin, F., see Brown 135 (19945)2 3
Marfaing, J., see Bettahi 135 (1994) 487
Markgraf, S.A., S. Kimura, T. Sawada and Ono, N., M. Kida, Y. Arai, K. Abe and K.
M. Gobbels, Metastable crystallization of Sahira, A new technique for controlling
Nd,Ga,;O,, melts: effects of time and the dopant concentration in the double-
temperature 135 (1994) 253 crucible method 135 (1994) 359
Markovi¢, M., B.O. Fowler and W.E. Brown, Ooshima, H., see Sazaki 135 (1994) 199
Octacalcium phosphate carboxylates. IV. Osadchuk, V.V., see Oseledchik 135 (1994) 373
Kinetics of formation and solubility of Oseledchik, Yu.S., A.L. Prosvirnin, V.V.
octacalcium phosphate succinate 135 (1994) 533 Starshenko, V.V. Osadchuk, A.I. Pis-
Masumoto, K., see Mochizuki 135 (1994) 318 arevsky, S.P. Belokrys, A.S. Korol, N.V.
Matsumoto, K., E. Schénherr and M. Woj- Svitanko, A.F. Selevich and S.A.
nowski, Growth of C,o crystals by the Krikunov, Crystal growth and properties
Pizzarello method 135 (1994) 154 of strontium tetraborate 135 (1994) 373
652 Author index
Osten, H.J., see Kruger 135 (1994) 246 Ruiz, A., see Mazuelas 135 (1994) 123
Ota, T., S. Otake and I. Iwasa, Metalorganic Rulmont, A., see Cloots 135 (1994) 496
chemical vapor deposition growth of Ga- Rushworth, S.A., see Jones 135 (1994) 285
rich (x > 0.5) Ga, In,_,P on GaAs (EB) 135 (1994) 646
Otake, S., see Ota 135 (1994) 646
Sacco, Jr., A., see DeLucas 135 (1994) 183
Sacuto, A., see Le 135 (1994) 1
Pang, L., see Taylor 135 (1994) 157
Saeed, M.R., see Yeboah 135 (1994) 323
Pang, S.J., see Chai 135 (1994) 639
Sahira, K., see Ono 135 (1994) 359
Pesek, A., see Abramof 135 (1994) 447
Sakata, S., W. Itoyama, I. Fujii and K. lishi,
Pfeffer, T., see Joyce 135 (1994) 31 Preparation of low-temperature Li,VO,
Piekarczyk, W. and S. Prawer, Diamond-
single crystal by floating zone technique 135 (19945)5 5
vapour interface and processes proceed-
Sakuma, T., see Mochizuki 135 (19942)5 9
ing on it during growth of diamond crys-
Salzman, J., see Maayan 135 (1994) 23
tals. II. Diamond (011) face 135 (1994) 172
Santoro, G.J., see Singh 135 (19946)1 9
Piffault, N., E. Gil, J. Leymarie, C. Monier,
Sasaki, M., see Yoshida 135 (19946)3 3
S.A. Clark, M. Anderson, R. Cadoret, A.
Sasaoka, C., see Mochizuki 135 (19942)5 9
Vasson and A.M. Vasson, Epitaxial
Saulys, D., see Redwing 135 (19944)2 3
growth and kinetic study of mismatched
Sawada, T., see Markgraf 135 (19942)5 3
(Ga,In)As/InP layers grown by hydride
Sazaki, G., H. Ooshima and J. Kato, Effect
vapour phase epitaxy 135 (1994) 11
of supersaturation ratio on the growth
Pisarevsky, A.I., see Oseledchik 135 (19943)7 3
rate and number of protease thermolysin
Plaas-Link, A., see Hennig 135 (19945)1 3
crystals 135 (1994) 199
Ploog, K.H., see Tournié 135 (1994) 97
Schall, C.A., J.M. Wiencek, M. Yarmush
Prahl, J., see DeLucas 135 (19941)8 3
and E. Arnold, Lysozyme crystal growth
Prawer, S., see Piekarczyk 135 (19941)7 2
reduced at high pressure 135 (1994) 548
Prosvirnin, A.L., see Oseledchik 135 (19943)7 3
Schon, S., M.L. Fearheiley, K. Diesner and
Purich, D.L., see Brown 135 (19945)2 3
S. Fiechter, The phase relations in the
system ZnAs,—Ge 135 (19946)0 1
Radhakrishnan, K., see Zhang 135 (1994) 441 Schonherr, E., see Matsumoto 135 (19941)5 4
Rao, G.S.J., see DeLucas 135 (1994) 183 Schowalter, L.J., see Li 135 (1994) 78
Redwing, J.M., T.F. Kuech, D. Saulys and Sébenne, C., see Le 135 (1994) 1
D.F. Gaines, Study of the gas phase Segawa, Y., see Mochizuki 135 (19943)1 8
chemistry in the silicon doping of GaAs Selevich, A.F., see Oseledchik 135 (19943)7 3
grown by metalorganic vapor phase epi- Sestak, J., see Stépanek 135 (19942)9 0
taxy using tertiarybutylarsine as_ the Sestdkova, V., see Stépanek 135 (19942)9 0
Group V source 135 (1994) 423 Shen, X.Q., M. Tanaka, K. Wada and T.
Regnet, M.M., see Heinke 135 (1994) 53 Nishinaga, Molecular beam _ epitaxial
Reichert, P., see DeLucas 135 (1994) 183 growth of GaAs, AlAs and Al, 4;Gag 55As
Reier, F.W., E. Jahn, N. Agrawal, P. Harde on (111)A-(001) V-grooved substrates 135 (1994) 85
and N. Grote, Doping characteristics of Shi, Z., Solution growth of silicon on pat-
undoped and Zn-doped In(Ga)AIAs lay- terned amorphous SiO, substrates 135 (1994) 273
ers grown by low-pressure metalorganic Shinn, M., see Hultman 135 (1994) 309
vapour phase epitaxy 135 (1994) 463 Singh, N.B., A.M. Stewart, R.D. Hamacher,
Reisinger, T., see Wolf 135 (1994) 113 J. Talvacchio, R. Mazelsky, G.J. Santoro,
Richards, R.N., see DeLucas 135 (1994) 183 W.M.B. Duval and R. DeWitt, Effect of
Ring, T.A., see Rubattel 135 (1994) 135 thermal convection on the quality of lead
Roberts, J.S., C.C. Button and A. Chew, The bromide crystals 135 (19946)1 9
incorporation of oxygen into InAlAs, the Sitter, H., see Abramof 135 (19944)4 7
role of trimethylindium (TMI) 135 (1994) 365 Sddervall, U., see Wang 135 (19944)5 5
Roberts, K.J., see Clydesdale 135 (1994) 331 Sourek, Z., see Stépanek 135 (19942)9 0
Rosenblum, W.M., see DeLucas 135 (1994) 183 Smith, C., see DeLucas 135 (19941)8 3
Roure, S., see Veesler 135 (1994) 505 Stanzl, H., see Wolf 135 (19941)1 3
Rubattel, S., J. Lemaitre, P. Bowen and T.A. Starshenko, V.V., see Oseledchik 135 (19943)7 3
Ring, Aqueous solubility of Y, Ba and Stassen, S., see Cloots 135 (19944)9 6
Cu oxalates in the system [Y(OH),, Stépanek, B., Z. Sourek, V. Sestékova, J.
Ba(OH),, Cu(OH),]—-H,C,0,-[HNO,/ Sesték and J. Kub, Study of low Te-doped
NaOH]-H,O 135 (1994) 135 GaSb single crystals 135 (1994) 290
Author index 653
Stewart, A.M., see Singh 135 (1994) 619 Verbeeck, R.M.H., see De Maeyer 135 (1994) 539
Stoll, B., see Behet 135 (1994) 434 Vinh, Le Thanh, see Le 135 (1994) 1
Sukegawa, T., see Tanaka 135 (1994) 269 Vinsanji, M., see Hennig 135 (1994) 513
Svitanko, N.V., see Oseledchik 135 (1994) 373
Szczerbakow, A., see Leszczynski 135 (1994) 565
Waag, A., see Heinke 135 (1994) 53
Takada, T., see Mochizuki 135 (1994) 259 Wada, K., see Shen 135 (1994) 85
Takahashi, J.. M. Kanaya and Y. Fujiwara, Wada, K., see Kohda 135 (1994) 629
Sublimation growth of SiC single crys- Wakamatsu, N., see lijima 135 (1994) 229
talline ingots on faces perpendicular to Wang, S.M., T.G. Andersson, W.Q. Chen,
the (0001) basal plane 135 (1994) 61 U. Sédervall and J. Thordson, Growth
Talvacchio, J., see Singh 135 (1994) 619 and characterization of digital and com-
Tajima, M., see Kang 135 (1994) 623 positionally graded AlGaAs/GaAs non-
Tanaka, A., A. Watanabe, M. Kimura and T. rectangular quantum wells 135 (19944)5 5
Sukegawa, The solute-feeding Czochral- Watanabe, A., see Tanaka 135 (19942)6 9
ski method for homogeneous GalnSb Weber, P.C., see DeLucas 135 (19941)8 3
bulk alloy pulling 135 (1994) 269 Weber, W., see Hennig 135 (19945)1 3
Tanaka, M., see Shen 135 (1994) 85 Wiencek, J.M., see Schall 135 (19945)4 8
Tansley, T.L., see Alexiev 135 (1994) 367 Williams, D.J., see Cheng 135 (19944)0 9
Taylor, G.H., J.D. Fitz Gerald, L. Pang and Wilson, K.P., see DeLucas 135 (19941)8 3
M.A. Wilson, Cathode deposits in Wilson, M.A., see Taylor 135 (19941)5 7
fullerene formation — microstructural ev- Wojnowski, M., see Matsumoto 135 (19941)5 4
idence for independent pathways of py- Wolf, K., A. Naumov, T. Reisinger, M. Kast-
rolytic carbon and nanobody formation 135 (1994) 157 ner, H. Stanzl, W. Kuhn and W. Geb-
Teng, D., P. Mandeville and L.F. Eastman, hardt, Luminescence caused by extended
Growth limitations of strained multiple lattice defects in epitaxially grown ZnTe
quantum wells 135 (1994) 36 layers 135 (1994) 113
Thomson, J.A., see DeLucas 135 (1994) 183
Thordson, J., see Wang 135 (1994) 455
Tompa, G.S., see Anderson 135 (1994) 383 Yang, T.R., see Huang 135 (1994) 224
Tournié, E. and K.H. Ploog, Surface stoi- Yarmush, M., see Schall 135 (1994) 548
chiometry, epitaxial morphology and Yasuda, T., see Mochizuki 135 (1994) 318
strain relaxation during molecular beam Yeboah, Y.D., M.R. Saeed and A.K.K. Lee,
epitaxy of highly strained InAs/ Gag 47 Kinetics of strontium sulfate precipita-
Ing 53As heterostructures 135 (1994) 97 tion from aqueous electrolyte solutions 135 (1994) 323
Trinh, E., see DeLucas 135 (1994) 183 Yew, T.R., see Chiang 135 (1994) 469
Trotta, P.P., see DeLucas 135 (1994) 183 Yoon, S.F., see Zhang 135 (1994) 441
Tsang, W.T., T.H. Chiu and R.M. Kapre, Yoshida, S. and M. Sasaki, Catalytic decom-
Monolayer chemical beam etching 135 (1994) 377 position of ammonia gas using aluminium
Tu, Chaoyang, Yidong Huang, Zundu Luo oxide for GaN formation 135 (1994) 633
and Guang Chen, Crystal growth of Yuan, L., see Chai 135 (1994) 639
KY(WO,), :Er?* :Nd?* 135 (1994) 636
Usui, A., see Mochizuki 135 (1994) 259 Zebib, A., see Zhou 135 (1994) 587
Zhang, D.H., K. Radhakrishnan and S.F.
Van Enckevort, W.J.P., see Balzuweit 135 (1994) 297 Yoon, The effect of As/Ga flux ratio on
Vasson, A., see Piffault 135 (1994) 11 Si-doped GaAs layers grown by molecu-
Vasson, A.M., see Piffault 135 (1994) 11 lar beam epitaxy 135 (1994) 441
Veesler, S., S. Roure and R. Boistelle, Gen- Zhou, H. and A. Zebib, Oscillatory double
eral concepts of hydrargillite AlOH), diffusive convection in crystal growh 135 (1994) 587
agglomeration 135 (1994) 505 Zimmermann, H., see Meyer 135 (1994) 571
Journal of Crystal Growth 135 (1994) 654-656 JOURNAL OF CRYSTAL
GROWTH
North-Holland
Subject index
Agglomeration of crystals 505 of floating zone growth of tube crystals 606
Alloys of horizontal Bridgman crystal growth 341
— of aluminum-iron 561 of molecular orbital calculations 259
Aluminum 285 of nucleation and growth 571
arsenide 85, 365 of oxide film growth 145
— copper iron quasicrystal 297 Convection 341, 587, 594, 619
ferrite 561
gallium arsenide 85, 855 Dendritic growth
— iron, alloy 561 of aluminum ferrite 561
Ammonium of ammonium chloride 594
— chloride 594 Device characterization
Apparatus diodes 367
— for growth under microgravity 513 heterojunction 246
for melt growth lasers 646
— — by Czochralski method 643 quantum wells 85, 455
— — — of gallium indium antimonide 269 D iamond 165, 172, 370, 639
for thin film growth D iodes, see Device characterization
— by vapor phase epitaxy
— — through metalorganic chemical vapor deposition 383 Epitaxy, see Thin film growth
Etching
Barium chemical 61, 85, 367, 377
— borate 279 photolithographic 85
Bismuth
— lead strontium calcium cuprate 496 Fullerene 154, 157
— strontium calcium cuprate 481, 496
Buckminster fullerene 154, 157 G allium
antimonide 290
Cadmium arsenide 23, 31, 71, 78, 85, 259, 302, 367, 377, 423, 441, 455,
— magnesium selenide 41 469, 623, 629
— selenide 383 indium antimonide 269
— sulphide selenide 476 indium arsenide 11, 129
— telluride 53, 383, 409, 447 indium phosphide 123, 646
Calcium nitride 633
— oxalate hydrates 235, 523 phosphide 123
Cellular growth selenide |
-— of thermolysin 199 G arnets 253
Characterization G raphite 370
— of barium borate 279
— of dislocations and microdefects H eterojunction, see Device characterization
— — in gallium arsenide 302 Hydrargillite 505
— in nitrides 309 Hydrodynamics, see Convection
— theory of 71 Hydroxyapatite 229, 539
of relaxation and mosaicity profiles in epitaxial layers 41
of solubility of oxalates 135 Indium
of solubility of octacalcium phosphate succinate 533 aluminum arsenide 365
of strain in cadmium telluride layers 53 antimonide 401, 434
Computer simulation arsenide 97
— of convection 587 gallium aluminum arsenide 463
— of crystal growth 331 phosphide 11, 123
Subject index
Kinetics Octacalcium
— of formation 533 — phosphate 229
of growth 11, 61, 85, 209, 323, 354, 434, 548, 623 — phosphate succinate 533
of interface control 209 Oxalates 135
of precursor decomposition 423
Paraffins 209
Lasers, see Device characterization
Phase diagrams
Lasers, crystals for 373, 646 — of carbon/hydrogen 165
Lead
— of carbon /hydrogen /oxygen 165
— bromide 619
— of carbon /oxygen 165
— germanium telluride 565
— of potassium yttrium tungstate /potassium tungstate 636
Lithium
— of yttrium vanadate 646
— vanadate 555
— of zinc arsenide /germanium 601
Lysozyme 548
Potassium
— yttrium tungstate 636
Manganese
Precursor
— telluride 447
— for aluminum film growth 285
Melt growth technique
for bismuth lead strontium calcium cuprate 496
—by Bridgman-—Stockbarger method
for indium antimonide 401
— — of aluminum ferrite 561
for sulphur doping 31
— — of ammonium chloride 594
Proteins 183, 513
— of lead bromide 619
— by Czochralski method
Quantum wells, see Device characterization
— — of gallium antimonide 290
Quasicrystals 297
— — of gallium arsenide 623
— — of gallium indium antimonide 269
— — of sodium nitrate 643 Ruthenium
— — of strontium tetraborate 373 — telluride 224
— — theory of 359
— by floating zone method Silicon 246, 273, 606
— — of bismuth strontium calcium cuprate 481 — carbide 61
— — of lithium vanadate 555 Sodium
— — theory of 606 — nitrate 643
— by flux method Solid growth technique
— — of aluminum copper iron quasicrystal 297 — by recrystallization
Mercurcy — — of bismuth lead strontium calcium cuprate 496
— cadmium telluride 383 — by sintering
— telluride 383 — — of yttrium barium cuprate 487
— zinc telluride 383 Solution growth technique
Microgravity, growth under — by flux method
— of ammonium chloride 594 of potassium yttrium tungstate 636
— of protein 183, 513 of yttrium vanadate 646
Morphological stability — by hydrostatic pressure
— of gallium indium phosphide 646 of lysozyme 548
— of graphite 370 — by low temperature method
— theory of 331 of calcium oxalate hydrates 235
of hydrargillite 505
Neodymium of hydroxyapatite 229, 539
— gallium garnet 253 of octacalcium phosphate 229
Niobium of paraffins 209
— nitride 309 of protein 183
Nucleation of strontium sulphate 323
— of calcium oxalate hydrates 235, 523 of tetrathiofulvalene—tetracyanoquinodimethane 196
— of neodymium gallium garnet 253 of thermolysin 199
— of thermolysin 199 — by top seeded solution growth
Numbers of yttrium vanadate 646
— Grashof 587 Statistical mechanics, molecular theory
— Rayleigh 619 — of interfaces 209
656 Subject index
Stefan problem or moving boundary problem — of gallium indium arsenide 11
— of tube crystals 606 — of indium phosphide 11
Strontium — — theory of 11, 172
— sulphate 323 through metalorganic chemical vapor deposition
— tetraborate 373 — of aluminum 285
— titanate 145 of aluminum arsenide 365
Superconductivity materials, high 7, of cadmium selenide 383
— bulk of cadmium telluride 383, 409
— — of BiSCCO 481, 496 of gallium arsenide 423, 629
— film of gallium indium arsenide 129
— — of YBCO 145, 487 of gallium indium phosphide 646
Superlattices, multilayers of indium aluminum arsenide 365
— of III-V compounds 123 of indium antimonide 401, 434
— of II-VI compounds 447 of indium gallium aluminum arsenide 463
Surface energy, determination of mercury cadmium telluride 383
— of paraffins 209 of mercury telluride 383
Surface structure of mercury zinc telluride 383
— of diamond film 172 of zinc selenide 383
— of indium antimonide 401 of zinc telluride 113, 383
— of indium arsenide 97 theory of 354, 629
— of paraffins 209 through metalorganic chemical vapor deposition, photo-
assisted
Tetrathiofulvalene—tetracyanoquinodimethane 196 — — of gallium arsenide 23
Thermolysin 199 — theory of 259
Thin film growth, epitaxy Titanium
by atomic layer epitaxy nitride 309
— of cadmium telluride 447 Tungsten 606
— of gallium nitride 633
— of manganese telluride 447
Vanadium
— of zinc telluride 447
nitride 309
by liquid phase epitaxy
Vapor growth technique
— of gallium arsenide 367
by chemical transport
— of silicon 273
— of ruthenium telluride 224
— theory of 145
by evaporation and condensation
by magnetron sputtering
— of cadmium sulphide selenide 476
— of nitrides 309
of fullerene 154
by molecular beam epitaxy
of lead germanium telluride 565
of aluminum arsenide 85
of protein 183
of aluminum gallium arsenide 85, 455
of silicon carbide 61
of cadmium telluride 53
of zinc selenide 318
of gallium arsenide 31, 78, 85, 377, 441, 455, 469
theory of 587
of gallium phosphide 123
by plasma in arc discharge
of gallium selenide |
— of fullerene 157
of indium arsenide 97
of indium phosphide 123
of silicon 246 Yttrium
barium cuprate 145, 487
of zinc selenide 41
vanadate 646
strain limits in 36
theory of 354
by vapor phase epitaxy Zinc
— through chemical vapor deposition germanium arsenide 601
— — of diamond 165, 172, 639 selenide 41, 318, 383
— — of gallium arsenide 259 telluride 113, 383, 447