Journal of Crystal Growth 1994 - 1995: Vol 141-150 Index

81 Pages·19.5 MB·English

jOuRmar oF CRYSTAL
GROWTH
ELSEVIER Journal of Crystal Growth 150 (1995) 1421-1484
Author index to volumes 141-150
Aanegola, S.K., see McCann 141 (1994) ; by metalorganic vapor phase epitaxy us-
Aarik, J., A. Aidla, K. Kukli and T. Uustare, ing tertiarybutylarsine and tertiarybutyl-
Deposition and etching of tantalum oxide phosphine precursors 145 (1994)
films in atomic layer epitaxy process 144 (1994) Agarwal, A., P.D. Patel and D. Lakshmi-
Aarik, J., A. Aidla, T. Uustare and V. Sam- narayana, Singel crystal growth of lay-
melselg, Morphology and structure of ered tin monoselenide semiconductor us-
TiO, thin films grown by atomic layer ing a direct vapour transport technique 142(1994) ;
deposition 148 (1995) Ahmed, M.U., E.D. Jones, J.B. Mullin and
Abbona, F., M. Angela-Franchini, C. Croni N.M. Stewart, Measurement of etch pit
Bono and H.E. Lundager Madsen, Effect densities in diffused samples of CdTe 146 (1995)
of ammonia excess on the crystal habit of Ahopelto, J., see Lipsanen 145 (1994)
NiN,HP O , - 6H ,O (Ni-struvite) 143 (1994) Aidla, A., see Aarik 144 (1994)
Abdul-Ridha, H.H., J.E. Bateman, R.C. Aidla, A., see Aarik 148 (1995)
Crowte, P. Hoye, A.C. Jones, R. Padda, Aigo, T., see Jono 145 (1994)
D.G. Patrikarakos and M.E. Pemble, Cri- Aindow, M., see Beanland 149 (1995)
teria for the design of monoalkylphos- Aizenberg, J., S. Albeck, S. Weiner and L.
phine precursors for InP metalorganic Addadi, Crystal—protein interactions
vapour phase epitaxy 145 (1994) 485 studied by overgrowth of calcite on bio-
Abe, S., K. Masumoto, K. Mochizuki and K. genic skeletal elements 142 (1994)
Suto, Growth and characterization of Aja, D., see Rossetto 146 (1995) 5
Pb, _,Ca,S,_,Se, thin films prepared by Akamatsu, B., see Lamare 141 (1994) 3
hot wall epitaxy 144(1994) § Akasaki, 1., see Detchprohm 145 (1994)
Abe, T., M. Suemitsu and N. Miyamoto, Akasaki, |. and H. Amano, Crystal growth of
Microcrystalline diamond deposition us- column III nitrides and their applications
ing inert-gas curtain combustion-flame to short wavelength light emitters 146 (1995)
method 143 (1994) 206 Akinaga, H., K. Tanaka, K. Ando and T.
Abe, Y., see Kasuga 144 (1994) 375 Katayama, Fabrication and magneto-
Abstreiter, G., see Niitzel 150 (1995) 1011 optical properties of epitaxial ferromag-
Abstreiter, G., see Brunner 150 (1995) 1050 netic Mn, _, Sb thin films grown on GaAs
Abstreiter, G., see Brunner 150 (1995) 1060 and sapphire 150 (1995) 1144
Achiba, Y., see Li 143 (1994) 58 Akiyama, M., see Ueda 145 (1994) 707
Adachi, A., see Liu 150 (1995) Akiyama, Y., T. Sato and N. Imaishi, Reac-
Adachi, A., see Tomita 150 (1995) tion analysis for ZrO, and Y,O, thin
Adachi, A., see Tanaka 150 (1995) 3 film growth by low-pressure metalorganic
Adachi, A., see Shimomura 150 (1995) chemical vapor deposition using B-dike-
Adachi, A., see Kitada 150 (1995) tonate complexes 147 (1995)
Adachi, G., see Imanaka 141 (1994) 15 Alaoui, H., see André 144 (1994)
Adachi, G., see Kobayashi 143 (1994) 3 Albeck, S., see Aizenberg 142 (1994)
Adam, M., see Walther 143 (1994) Albright, J.G., see Zeidler 142 (1994)
Adamski, J.A., see Prasad 142 (1994) Alexandre, F., see Lamare 141 (1994) :
Addadi, L., see Aizenberg 142 (1994) Alexandre, F., see Legay 148 (1995)
Ae, S., T. Terakado, T. Nakamura, T. Torikai Alexandre, F., see Legay 150 (1995) 3
and T. Uji, Low threshold A = 1.3 ym Alexiev, D., K.S.A. Butcher and A.A.
multi-quantum well laser diodes grown Williams, Gamma-ray detectors from
1422 Author index to volumes 141-150
thermally annealed Bridgman-grown of guest molecules on the crystal growth
CdTe 142 (1994) of the organic superconductor «-(BEDT
Ali, A.S.M., see Duncan 143 (1994) TTF),Cu(NCS), 141 (1994)
Allegretti, F.. M. Inoue and T. Nishinaga, Aoki, M., see Suzuki 145 (1994)
In-situ observation of GaAs selective epi- Aoki, Y., Y. Nakamuta and Y. Sugawara,
taxy on GaAs (111)B substrates 146 (1995) 3 Formation of tetrapod-like crystals of di-
Allegri, P., see Bosacchi 150 (1995) amond formed by hot-filament chemical
Allegri, P., see Bosacchi 150 (1995) vapor deposition: effects of preformation
Allerman, A.A., see Jagadish 145 (1994) of tungsten carbide on the substrate 147 (1995)
Alonso, M.L., see Ig 150 (1995) Aoyagi, T., see Takiguchi 145 (1994)
Alov, D.L., A.A. Kolchin, N.N. Kolesnikov Aoyagi, Y., see Schoenfeld 142 (1994)
and S.I. Rybchenko, Multilayer single Aoyagi, Y., see Zhang 145 (1994)
crystal structure for infra-red optical Aoyagi, Y., see Isshiki 145 (1994)
coating 142 (1994) Aoyagi, Y., see Cui 150 (1995)
Alperovich, V.L., see Bolkhovityanov 146 (1995) Aoyagi, Y., see Zhang 150 (1995)
Amano, C., see Kohama 145 (1994) Apfelbaum, F., I. Mayer, C. Rey and A.
Amano, H., see Akasaki 146 (1995) Lebugle, Magnesium in maturing syn-
An, Haiyan, Ming Li, Shuren Yang, Zhen- thetic apatite; a Fourier transform in-
hong Mai and Shiyong Liu, Characteriza- frared analysis 144 (1994) 3
tion of In,Ga,_,As/InP epilayers by Arakawa, Y., see Oshinowo 145 (1994)
X-ray double crystal rocking curve peak Arivuoli, D., see Krishnamurthy 141 (1994)
profile analysis 148 (1995) Arizmendi, L., see Santos 142 (1994)
Anayama, C., see Kondo 141 (1994) Armas, B., see Madigou 148 (1995)
Anders, M.J., P.R. Hageman and L.J. Giling, Arnaudov, B., see Evtimova 148 (1995)
Misorientation dependence of zinc incor- Arnold, S., see Na 149 (1995)
poration in GaAs 142 (1994) Asaeda, M., see Kitamura 141 (1994)
Anderson, D.M. and S.H. Davis, Fluid flow, Asahi, H., X.F. Liu, K. Inoue, D. Marx, K.
heat transfer, and solidification near tri- Asami, K. Miki and S. Gonda, Metalor-
junctions 142 (1994) ganic molecular beam epitaxy and etch-
Andersson, S., see Ericson 143 (1994) ing of GaAs and GaSb using trisdimeth-
Andersson, T.G., see Thordson 150 (1995) ylaminoarsenic and _trisdimethylami-
Ando, H., see Ando 145 (1994) noantimony 145 (1994)
Ando, H., see Tomioka 150 (1995) Asahi, H., see Marx 150 (1995)
Ando, H., N. Okamoto, S. Yamaura, T. Asahi, H., see Kim 150 (1995) §
Tomioka, T. Takahashi, H. Shigematsu, Asahi, H., see Villaflor 150 (1995)
A. Kawano, S. Sasa and T. Fujii, High Asahi, H., see Iwata 150 (1995)
current gain InGaP/GaAs heterojunc- Asahi, H., see Yamamoto 150 (1995)
tion bipolar transistors grown by multi- Asahi, H., see Marx 150 (1995)
wafer gas-source molecular beam epitaxy Asahi, T., Y. Taniguchi, A. Koyama and O.
system 150 (1995) 1281 Oda, Characterization of 100 mm diame-
Ando, K., see Akinaga 150 (1995) 1144 ter CdZnTe single crystals grown by the
Ando, S., N. Kobayashi and H. Ando, Selec- vertical gradient freezing method 149 (1995)
tive area metalorganic chemical vapor Asai, S., see Okajima 141 (1994) 3
deposition growth for hexagonal-facet Asaka, N., see Hashimoto 146 (1995)
lasers 145 (1994) : Asami, K., see Asahi 145 (1994)
André, J.P., H. Alaoui, A. Deswarte, Y. Asami, K., see Kim 150 (1995)
Zheng, J.F. Pétroff, X. Wallart and J.P. Asami, K., see Yamamoto 150 (1995)
Nys, Iron silicide growth on Si({111) sub- Asano, T., see Toda 145 (1994)
Strate using the metalorganic vapour Asbeck, P.M., see Li 150 (1995)
phase epitaxy process 144 (1994) Ashizawa, Y., see Nozaki 145 (1994)
Andreadakis, N.C., see Bhat 145 (1994) Ashu, P.A., see Whitehouse 150 (1995)
Angela-Franchini, M., see Abbona 143 (1994) Ashu, P.A., J.H. Jefferson, A.G. Cullis, W.E.
Angelova, S.S., see Nihtianova 148 (1995) Hagston and C.R. Whitehouse, Molecu-
Anilkumar, A.V., see Grugel 142 (1994) lar dynamics simulation of (100)InGaAs /
Anwar, N., see Zhang 150 (1995) GaAs strained-layer relaxation processes 150 (1995)
Anzai, H., T. Itoh, N. Kinoshita, K. Honda, Assmus, W., see ROmer 141 (1994)
M. Tokumoto and T. Uchida, The effect Ast, D.G., see Matragrano 142 (1994)
Author index to volumes 141-150
Astier, J.P., see Lafont 143 (1994) 249 Daitoh and Y. Yano, Effect of adjacent
Astrova, E.V., see Chaldyshev 146 (1995) 246 insulating oxide layers on superconduc-
Auer, U., R. Reuter, C. Heedt, W. Prost and tivity ofo ne unit cell thick YBa,Cu,O,_,
F.J. Tegude, InP-based heterostructure layers in PrBa,Cu,0,_;/ YBa,Cu,
field-effect transistors with high-quality O,_,/ insulating oxide trilayers 150 (1995) 1074
short-period (InAs),,,,/(GaAs),,, super- Bando, Y., see Yoneda 150 (1995) 1090
lattice channel layers 150 (1995) 1225 Baraldi, A., see Bosacchi 150 (1995) 844
Auld, J., see Jones 146 (1995) 503 Barber, D.B., see Higuchi 148 (1995) 140
Auvray, P., see Contour 141 (1994) 141 Barber, P.G., R.F. Berry, W.J. Debnam, A.L.
Avanzini, V., see Bosacchi 150 (1995) 185 Fripp, G. Woodell and R.T. Simchick,
Avanzini, V., see Bosacchi 150 (1995) 844 Growth rates and interface shapes in ger-
Avery, A.R., D.M. Holmes, J.L. Sudijono, manium and lead tin telluride observed
T.S. Jones, M.R. Fahy and B.A. Joyce, A in-situ, real-time in vertical Bridgman
scanning tunnelling microscopy study of furnaces 147 (1995)
the deposition of Si on GaAs(001); impli- Barlett, D., see Tsui 150 (1995)
cations for Si 5-doping 150 (1995) Barnett, S.J., see Whitehouse 150 (1995)
Ayers, W., see Menna 141 (1994) Barthe, F., see Gérard 150 (1995)
Azad, F., see Looze 148 (1995) Barz, R.U. and P. Gille, The mechanism of
Aziz, M.J., see Kittl 148 (1995) inclusion formation during crystal growth
Azoulay, R., Y. Raffle, R. Kuszelewicz, G. by the travelling heater method 149 (1995)
Le Roux, L. Dugrand and J.C. Michel, In Bassani, F., see Calcagnile 150 (1995)
situ control of the growth of GaAs/ Bastos, P.L., see Bongers 145 (1994)
GaAlAs structures in a metalorganic Bateman, J.E., see Abdul-Ridha 145 (1994)
vapour phase epitaxy reactor by laser re- Batur, C., see Kasparian 141 (1994)
flectometry 145 (1994) Bauer, G., see Springholz 144 (1994)
Azoulay, R., see Kuszelewicz 147 (1995) Bauer, G., see Darhuber 150 (1995)
Azuma, T., see Shirakashi 145 (1994) Bauer, G., see Frank 150 (1995) 1190
Azuma, T., see Shirakashi 150 (1995) Bauer, P., see Wirth 146 (1995) 404
Bauhuis, G.J., see Hageman 145 (1994) 958
Baba-Ali, N., see Novikov 146 (1995) Baumann, I|., Analysis of optically detected
Baba-Ali, N., see Foxon 150 (1995) compositional inhomogeneities in Czoch-
Bachmann, K.J., see Xing 147 (1995) ralski-grown LiNbO, 144 (1994) 193
Bachmann, K.J., see Dietz 150 (1995) Bauser, E., see Gustafsson 141 (1994) 363
Badaud, J.P., see Coupat 141 (1994) Bawendi, M.G., see Danek 145 (1994) 714
Baets, R., see Vermeire 145 (1994) Beanland, R., M. Aindow, T.B. Joyce, P.
Baeumler, M., see Flemig 143 (1994) Kidd, M. Lourengo and P.J. Goodhew, A
Baiocchi, F.A., see Fratello 142 (1994) study of surface cross-hatch and misfit
Bajaj, J., see Irvine 145 (1994) dislocation structure in Ing ;;GagxsAs/
Bak-Misiuk, J., see Grasza 146 (1995) GaAs grown by chemical beam epitaxy 149 (1995)
Bakr, N.A. and F.M. Feodrov, Characteris- Beccard, R., see Taudt 145 (1994)
tics of CdSe: In—-ZnTe:As thin film het- Becker, C.R., see Einfeldt 146 (1995)
erojunctions prepared by semi-closed Becker, U., see Griin 141 (1994)
space technique 142 (1994) Becker, U., see Giessen 141 (1994)
Baldus, A., A. Bett, O.V. Sulima and W. Behr, T., see Moller 143 (1994)
Wettling, Hybrid molecular beam epi- Behr, T., D. Hommel, H. Cerva, J. Niirn-
taxy /l ow-temperature liquid phase epi- berger, V. Beyersdorfer and G. Land-
taxy growth of GaAs (AlGaAs) layers on wehr, Structural and electrical properties
Si 141 (1994) 3 of ZnSe laser diodes optimized by trans-
Baldus, A., A. Bett, U. Blieske, O.V. Sulima mission electron microscopy, reflection
and W. Wettling, Etchback-regrowth high energy electron diffraction, X-ray
process for AlGaAs/GaAs solar cell diffraction and C-V profiling 150 (1995)
structures 146 (1995) Behrend, J., see Daweritz 150 (1995)
Baldus, A., A. Bett, O.V. Sulima and W. Beister, G., see Bugge 145 (1994)
Wettling, Investigation of GaAs growth Bell, W., see Foster 145 (1994)
from Bi-based melts for solar cells 146 (1995) Bell, W., see Hails 145 (1994)
Banazadeh, M., see Kriebel 141 (1994) Belogorokhov, A.L., see Villaflor 150 (1995)
Bando, Y., T. Terashima, K. Shimura, Y. Benchimol, J.L., see Lamare 141 (1994)
1424 Author index to volumes 141-150
Benchimol, J.L., see Legay 148 (1995) 211 Bimberg, D., see Krost 145 (1994)
Benchimol, J.L., see Legay 150 (1995) 394 Bimberg, D., A. Dadgar, R. Heitz, A. Knecht,
Bender, G., see Flemig 143 (1994) 29 A. Krost, M. Kuttler, H. Scheffler, A.
Bender, H., see De Boeck 150 (1995) 1139 Naser, B. Srocka, T. Wolf, T. Zinke, J.Y.
Ben Hadid, H., see Kaddeche 141 (1994) 279 Hyeon, S. Wernik and H. Schumann,
Bennema, P., see Strom 149 (1995) Novel ways to grow thermally stable
Bennema, P., see Strom 149 (1995) semi-insulating InP-based layers 145 (1994)
Benz, .. see Laasch 141 (1994) Bindal, M.M., B.P. Singh, S.K. Singhal, R.K.
Benz, ., see Tegetmeier 141 (1994) Nayar and R. Chopra, High pressure
Benz, .. see Schwarz 144 (1994) phase transformations in _ turbostratic
Benz, ., see Schwarz 146 (1995) boron nitride using magnesium boron ni-
Benz, .. see Eiche 146 (1995) tride as the catalyst 144 (1994)
Benz, .. See Laasch 146 (1995) Birecki, H., see Helbing 146 (1995)
Benz, .. See Kloess 146 (1995) Biswas, A., Solidification of acoustically levi-
Benz, .. see Fiederle 146 (1995) tated o-terphenyl crystals: a Raman study 147 (1995)
., see Danilewsky 146 (1995) Blaesing, J., see Schoenfeld 142 (1994)
Berbézier, 1., see Dutartre 142 (1994) Blakemore, J.S., see Nordquist 141 (1994)
Berbezier, I., see Natoli 146 (1995) Blanck, H., see Di Forte-Poisson 145 (1994)
Bérenguer, M., see Dutartre 142 (1994) Blauermel, M., see Bollig 145 (1994)
Beresford, R., see Ohtani 150 (1995) Blieske, U., see Baldus 146 (1995)
Berger, H., see Hahnert 142 (1994) Bliss, D.F., see Prasad 142 (1994)
Bergmann, D., see Chen 144 (1994) Bloch, J., see Etienne 150 (1995)
Bergunde, T., F. Durst, L. Kadinski, Yu.N. Bobel, F.G., see Ritter 146 (1995)
Makarov, M. Schafer and M. Weyers, Bobrovnikova, 1.A., see Chaldyshev 146 (1995)
Modelling of growth in a 5 X 3 inch mul- Bochnia, R., see Kiinzel 150 (1995)
tiwafer metalorganic vapour phase epi- Bock, A., see Spika 146 (1995)
taxy reactor 145 (1994) Boebel, F.G., H. Médller, B. Hertel, H.
Bergunde, T., D. Gutsche, L. Kadinski, Yu. Grothe, G. Schraud, St. Schréder and
Makarov and M. Weyers, Transport and P.P. Chow, In situ film thickness and
reaction behaviour in Aix-2000 Planetary temperature control of molecular beam
metalorganic vapour phase epitaxy reac- epitaxy growth by pyrometric interferom-
tor 146 (1995) § etry 150 (1995)
Bernardi, S., see Sochinskii 149 (1995) Bogatyreva, S.V., see Zaitseva 148 (1995)
Bernstein, B., see Looze 148 (1995) Bogdanov, S., see Giessen 141 (1994)
Berry, R.F., see Barber 147 (1995) Bogdanowicz, W. and Z. Bojarski, 6’-SnSb
Berstein, E., see Othmani 144 (1994) single crystals obtained by the method of
Bett, A., see Baldus 141 (1994) inclined front crystallization 147 (1995) 369
Bett, A., see Baldus 146 (1995) Bohm, G., see ROhr 150 (1995) 306
Bett, A., see Baldus 146 (1995) 3 Bohm, G., see Klein 150 (1995) 1252
Beyersdorfer, V., see Mller 143 (1994) Boistelle, R., see Veesler 142 (1994) 177
Beyersdorfer, V., see Behr 150 (1995) Boistelle, R., see Lafont 143 (1994) 249
Bhat, H.L., see Dutta 141 (1994) Bojarski, Z., see Bogdanowicz 147 (1995) 369
Bhat, H.L., see Dutta 141 (1994) Bolkhovityanov, Yu.B., V.L. Alperovich, A.S.
Bhat, R., see Caneau 145 (1994) Jaroshevich, N.V. Nomerotsky, A.G.
Bhat, R., C.E. Zah, M.A. Koza, B. Pathak, Paulish, A.S. Terekhov and E.M.
F. Favire, W. Lin, M.C. Wang, N.C. An- Trukhanov, Liquid phase epitaxial growth
dreadakis, D.-M. Hwang, T.P. Lee, Z. of elastically strained InGaAsP layers for
Wang, D. Darby, D. Flanders and J.J. spin-polarized electron sources 146 (1995) 310
Hsieh, High-performance 1.3 um Al Bolkhovityanov, Yu.B., A.M. Gilinsky, N.V.
GalnAs/ InP strained quantum well Nomerotsky, E.M. Trukhanov and AS.
lasers grown by organometallic chemical Jaroshevich, Liquid phase epitaxial
vapor deposition 145 (1994) 858 growth of elastically strained In Ga, _,P
Bhattacharya, P.K., see Malik 150 (1995) 984 and In,Ga,_,As,P,_, solid solutions on
Bi, W.G., see Li 150 (1995) 1375 GaAs substrates 149 (1995) 17
Biao, Y., see Nason 146 (1995) 23 Bollig, B., M. Blauermel, W. Taudt and M.
Bilger, G., see Fischer 141 (1994) 93 Heuken, Cathodolumi ence charac-
Bimberg, D., see Krost 145 (1994) 171 terization of nitrogen-doped ZnSe 145 (1994) 562
Author index to volumes 141-150
Bonanni, A., see Calcagnile 150 (1995) 712 Brandt, O., see Kajikawa 150 (1995)
Bonanni, A., see Vanzetti 150 (1995) 765 Brar, B., see Makimoto 150 (1995)
Bonardi, N., see Ramos 143 (1994) 227 Bratina, G., see Vanzetti 150 (1995)
Bongers, M.M.G., P.L. Bastos and LJ. Braun, W. and K.H. Ploog, Simultaneous
Giling, Temperature dependent facet de- monitoring of different surface processes
velopment of LP-MOCVD InGaP grown on different streaks of the reflection high
on patterned GaAs substrates 145 (1994) energy electron diffraction pattern 150 (1995)
Booker, G.R., P.C. Klipstein, M. Lakrimi, S. Brebick, R.F., see Sha 146 (1995)
Lyapin, N.J. Mason, R.J. Nicholas, T.-Y. Brebner, J.L., see Tran 145 (1994)
Seong, D.M. Symons, T.A. Vaughan and Breéevic, L., see Kralj 143 (1994)
PJ. Walker, Growth of InAs/ GaSb Breiland, W.G., see Tompa 145 (1994)
strained layer superlattices. I 145 (1994) Breitkopf, Th., see Griin 146 (1995)
Booker, G.R., P.C. Klipstein, M. Lakrimi, S. Brenier, R., see Ramos 143 (1994)
Lyapin, N.J. Mason, I.J. Murgatroyd, RJ. Brenn, R., see Flemig 143 (1994)
Nicholas, T.-Y. Seong, D.M. Symons and Brennan, S., see Kisker 146 (1995)
PJ. Walker, Growth of InAs/GaSb Bressler-Hill, V., see DenBaars 145 (1994)
strained layer superlattices.II 146 (1995) 495 Bretz, M., B.G. Demczyk and L. Zhang,
Bordone, E.E. and J.C. Caretti, A contribu- Structural imaging of a thick-walled car-
tion to the kinetics of y > a™ transfor- bon microtubule 141 (1994)
mation in Fe 148 (1995) 165 Bridenbaugh, P.M., J.O. Eckert, G. Nykolak,
Borghs, G., see De Boeck 150 (1995) 1139 G. Thomas, W. Wilson, L.M. Demianets,
Bosacchi, A., F. Colonna, S. Franchi, P. Pas- R. Riman and R.A. Laudise, Hydrother-
carella, P. Allegri and V. Avanzini, In- mal growth and properties of KGdF, 144 (1994)
dium surface segration in InGaAs-based Briggs, A.T.R., see Glew 145 (1994)
structures prepared by molecular beam Brinkman, A.W., see Hallam 146 (1995)
epitaxy and atomic layer molecular beam Brunco, D.P., see Kitt! 148 (1995)
epitaxy 150 (1995) 185 Brunel, M., see Ramos 143 (1994)
Bosacchi, A., E. Gombia, R. Mosca, S. Brunet, F., see Chateigner 148 (1995)
Franchi, A. Carnera and A. Gasparotto, Bruni, M.R., N. Gambacorti, S. Kaciulis, G.
Shallow donors and deep levels in GaAs Mattogno, M.G. Simeone, L.G. Quag-
grown by atomic layer molecular beam liano, N. Tomassini and B. Jusserand,
epitaxy 150 (1995) 261 Role of the substrate deoxidation process
Bosacchi, A., S. Franchi, P. Allegri, V. in the growth of strained InAs/InP het-
Avanzini, A. Baraldi, C. Ghezzi, R. Mag- erostructures 150 (1995) 123
nanini, A. Parisini and L. Tarricone, Brunner, J., M. Gail, G. Abstreiter and P.
Electrical and photol ence prop- Vogl, SiGe quantum wells on (110) Si
erties of undoped GaSb prepared by grown by molecular beam epitaxy 150 (1995) 1050
molecular beam epitaxy and atomic layer Brunner, J., P. Schittenhelm, J. Gonder-
molecular beam epitaxy 150 (1995) 844 mann, B. Spangenberg, B. Hadam, T.
Botchkarev, A.E., see Morkog 150 (1995) 887 Késter, H.G. Roskos, H. Kurz, H. Goss-
Botchkarev, A.E., see Park 150 (1995) 1275 ner, I. Eisele and G. Abstreiter, SiGe
Béttcher, J., see Kiinzel 150 (1995) 18 wires and dots grown by local epitaxy 150 (1995) 1060
Béttcher, J., see Kiinzel 150 (1995) 1241 Brunthaler, G., see Ferreira 146 (1995) 418
Béttcher, J., see Kiinzel 150 (1995) 1323 Brunthaler, G., see Darhuber 150 (1995) 775
Béttcher, K. and H. Hartmann, Zinc se- Bruynseraede, C., see De Boeck 150 (1995) 1139
lenide single crystal growth by chemical Brylinski, C., see Di Forte-Poisson 145 (1994) 983
transport reactions 146 (1995) 53 Budiman, M., see Kojima 150 (1995) 1175
Bougnot, G., see Giani 148 (1995) 25 Bugge, F., G. Beister, G. Erbert, S. Gram-
Bourée, J.E., see Qu’Hen 145 (1994) 541 lich, I. Rechenberg, H. Treptow and M.
Bourret, E.D., F.X. Zach, K.M. Yu and J.M. Weyers, Effect of growth interruption on
Walker, Growth and characterization of performance of AlGaAs/ InGaAs/ GaAs
ZnSe grown by organometallic vapor quantum well lasers 145 (1994)
phase epitaxy using diisopropyl! selenide Bugiel, E., see Osten 142 (1994)
and diethyl zinc 147 (1995) Bugiel, E., see Osten 143 (1994)
Bovier, C., see Othmani 144 (1994) Bulitka, N., see Tompa 145 (1994)
Braden, M., see Kriebel 141 (1994) Bullough, T.J., see Joyce 146 (1995)
Brandle, C.D., see Fratello 142 (1994) Bullough, T.J., see Pfeffer 146 (1995)
1426 Author index to volumes 141-150
Bullough, T_J., see Joyce 150 (1995) Cerva, H., see Behr 150 (1995) 743
Burger, A., see Nason 146 (1995) Chait, A., see Povinelli 144 (1994) 103
Burger, A., see Chen 147 (1995) Chaldyshev, V.V., E.V. Astrova, A.A. Lebe-
Biirkner, S., see Flemig 143 (1994) dev, LA. Bobrovnikova, N.A. Chernov,
Burlitch, J.M., see Higuchi 148 (1995) O.M. Ivieva, L.G. Lavrentieva, L.V.
Butcher, K.S.A., see Alexiev 142 (1994) 3 Teterkina and M.D. Vilisova, Vapour
Byrne, E.K., see Tanbun-Ek 145 (1994) phase epitaxial grown GaAs films with a
Byun, S.C., see Oh 150 (1995) very low deep level concentration 146 (1995) 246
Chaly, V.P., D.M. Demidov, G.A. Fokin,
Cadoret, R., see Coupat 141 (1994) S.Yu. Karpov, V.E. Myachin, Yu.V.
Cadoret, R., a-Mercuric iodide crystal Pogorelsky, 1.Yu. Rusanovich, A.P.
growth by physical vapour transport 146(1995) 9 Shkurko and A.L. Ter-Martirosyan, Use
Cahill, D.G., see Park 150 (1995) 1275 of molecular beam epitaxy for high-power
Cai, W.Z., Z.S. Li, X.M. Ding, X.Y. Hou, J. AlGaAs laser production 150 (1995) 1350
Wang, C.S. Zhu, R.Z. Su and Xun Wang, Chan, S.-H., C.-Y. Chang and S.M. Sze, In-
Hot wall epitaxial growth of ZnSe on vestigations on the compositional non-
S-passivated GaAs (100) substrate 142 (1994) uniformity of selectively grown Ga,
Calcagnile, L.. M. Di Dio, M. Lomascolo, R. In,_,P by LP-MOCVD using EDMI,
Rinaldi, P. Prete, R. Cingolani, L. TMI, TEG, and TMG as group III
Vanzetti, A. Bonanni, F. Bassani, L. sources 145 (1994)
Sorba and A. Franciosi, Recombination Chan, Y.W., see Sou 147 (1995)
mechanisms in photopumped Zn,_,Cd, Chan, Y.W., H. Wang, I.K. Sou, K.S. Wong
Se / ZnSe multiple quantum well lasers 150 (1995) and G.K.L. Wong, Molecular beam epi-
Calcott, P.D.J., see Freer 150 (1995) taxial growth and characterization of Zn
Campa, J.A., M. Vélez, C. Cascales, E. Gu- STe epilayers and ZnSTe/ZnSe super-
tiérrez Puebla, M.A. Monge, I. Rasines lattices on Si substrates 150 (1995)
and C. Ruiz-Valero, Crystal growth of Chand, N., J.E. Johnson, J.W. Osenbach,
superconducting LiTi,O, 142 (1994) W.C. Liang, L.C. Feldman, W.T. Tsang,
Campbell, T.A. and J.N. Koster, Radio- H.W. Krautter, M. Passlack, R. Hull and
scopic visualization of indium antimonide V. Swaminathan, Molecular beam depo-
growth by the vertical Bridgman—Stock- sition of high quality silicon oxide dielec-
barger technique 147 (1995) tric films 148 (1995)
Camporese, A., see Rossetto 146 (1995) Chandrasekhar, S., see Hamm 148 (1995)
Caneau, C., R. Bhat, S.A. Schwarz, M.A. Chang, C.-M., see Lin 142 (1994)
Koza, C.E. Zah, D.M. Hwang, A. Rajhel Chang, C.-Y., see Chan 145 (1994)
and C. Chen, Ti doping of InP and Chang, C.Y., see Cheng 150 (1995)
GalnAs using TiCl, 145 (1994) Chao, J.Y., see Li 148 (1995)
Cantwell, G., see Eason 150 (1995) Chartier, E., see Di Forte-Poisson 145 (1994)
Canut, B., see Ramos 143 (1994) Chateigner, D., F. Brunet, A. Deneuville, P.
Cao, L.Z., see Jin 148 (1995) Germi, M. Pernet, E. Gheeraert and P.
Cao, L.Z., see Jin 149 (1995) Gonon, Effect of boron incorporation on
Capelletti, R., see Zha 146 (1995) the lattice parameter and texture of dia-
Capewell, D.R., see Menna 141 (1994) mond films deposited by chemical vapour
Caretti, J.C., see Bordone 148 (1995) deposition on silicon
Carey, M.C., see Konikoff 144 (1994) Chehab, S., see Chen
Carius, R., see Hardtdegen 145 (1994) Chelakara, R.V., M.R. Islam, J.G. Neff, K.G.
Carlin, J.F., see Gustafsson 147 (1995) Fertitta, A.L. Holmes, F.J. Ciuba and
Carlsson, N., see Seifert 145 (1994) R.D. Dupuis, Growth of high-quality In
Carnera, A., see Bosacchi 150 (1995) AIP/InGaP quantum wells and InAIP/
Cascales, C., see Campa 142 (1994) InGaP superlattice barrier cladding lay-
Cassette, S., see Di Forte-Poisson 145 (1994) ers by metalorganic chemical vapor depo-
Catinaud, C., see Giani 148 (1995) sition 145 (1994)
Caulet, J., see Contour 141 (1994) 141 Chelakara, R.V., see Neff 145 (1994)
Cave, N., see Walther 143 (1994) 1 Chen, A.C., see Pearah 150 (1995)
Cavicchi, T., see Woelk 145 (1994) 972 Chen, B.D., G.D. Potts, R.J. Davey, J. Gar-
Cebollada, A., see Farrow 150 (1995) 1126 side, D. Bergmann, S. Niehérster and J.
Cerva, H., see Krost 145 (1994) 314 Ulrich, Growth of meta-chloronitroben-
Author index to volumes 141-150 1427
zene crystals in the presence of “tailor- Chernov, A.A., see Coriell 141 (1994) 219
made” additives: assignment of the polar Chernov, A.A., S.R. Coriell and B.T. Mur-
axes from morphological changes 144 (1994) ray, Kinetic self-stabilization of a stepped
Chen, C., see Caneau 145 (1994) interface: growth into a supercooled melt 149 (1995) 120
Chen, C.-H. and T.-R. Yew, Silicon epitaxial Chernov, A.A. and HJ. Scheel, Extremely
growth by plasma enhanced chemical va- flat surfaces by liquid phase epitaxy 149 (1995) 187
por deposition from SiH,/H, at 165- Chernov, N.A., see Chaldyshev 146 (1995) 246
350°C 147 (1995) Chevy, A., see De Sandro 144 (1994) 65
Chen, C.-S., see Tsay 144 (1994) Chevy, A., see Lang 146 (1995) 439
Chen, F., see Lu 149 (1995) Chey, S.J., see Park 150 (1995) 1275
Chen, F.C., see Lan 142 (1994) Chichibu, S., see Niki 150 (1995) 1201
Chen, Guanghua, see Zhang 144 (1994) Chin, A., H.Y. Lin and K.Y. Hsieh, Strong
Chen, H., see Tan 141 (1994) enhancement of the optical and electrical
Chen, H., M.Z. Saghir, D.H.H. Quon and S. properties, and spontaneous formation of
Chehab, Numerical study on transient an ordered superlattice in (111)B Al
convection in float zone induced by g- GaAs 150 (1995)
jitters 142 (1994) Chin, V.W.L., see Egan 147 (1995)
Chen, J.-X., see Chen 146 (1995) Chiu, T.H., see Tsang 145 (1994)
Chen, Jyh-Chen and Chieh Hu, Measure- Chiu, T.H., W.T. Tsang, M.D. Williams,
ment of the float-zone interface shape C.A.C. Mendonga, K. Dreyer and F.G.
for lithium niobate 149 (1995) Storz, Effects of cation diffusion during
Chen, K.-M., see Hwang 147 (1995) chemical etching 150 (1995)
Chen, K.-T., M.A. George, Y. Zhang, A. Cho, A.Y., Twenty years of molecular beam
Burger, C.-H. Su, Y.-G. Sha, D.C. Gillies epitaxy 150 (1995)
and §.L. Lehoczky, Selenium precipita- Choe, K.S., Oxygen incorporation and pre-
tion in ZnSe crystals grown by physical cipitation behavior in heavily boron-
vapor transport 147 (1995) 292 doped Czochralski silicon crystals 147 (1995)
Chen, Nuofu, Xiulan Zhang and Yiwen Den, Choh, S.H., see Lee 147 (1995)
Degradation related defects in AlGaAs/ Choi, D.Y., see Jung 148 (1995)
GaAs visible lasers 148 (1995) 219 Choi, J.G., see Hwang 142 (1994)
Chen, P., see Konkar 150 (1995) 311 Chollet, F., see Dutartre 142 (1994)
Chen, P., see Xie 150 (1995) 357 Chong, PJ., see Hwang 142 (1994)
Chen, P., see Hasenberg 150 (1995) 1368 Chong, Y., see Jin 149 (1995)
Chen, S.-H., see Tsay 144(1994) 91 Chopra, R., see Bindal 144 (1994)
aeeuks Be
Chen, X., see Zhang 150 (1995) 964 Choquette, K.D., see Schneider 145 (1994)
Chen, Xishen, see Yan 148 (1995) 232 Chow, D.H., Y.H. Zhang, R.H. Miles and
Chen, Y.-F., J.-X. Chen, L. Shun, T. Yu, P. H.L. Dunlap, Structural and transport
Li, N.-B. Ming and L.-J. Shi, Preparation properties of InAs/AISb superlattices 150 (1995)
of epitaxial PbTiO, thin films by met- Chow, P.P., see Boebel 150 (1995)
alorganic vapor phase epitaxy under re- Chow, P.P., see Reich 150 (1995)
duced pressure 146 (1995) Chow, P.P., see Van Hove 150 (1995)
Chen, Y.K., see Tanbun-Ek 145 (1994) Christen, J., see Krost 145 (1994)
Chen, Z.J., see Jin 148 (1995) Chu, J.H., see Li 148 (1995)
Chen, Z.J., see Jin 149 (1995) Chu, M., see Zhu 150 (1995) 1045
Cheng, H.-E. and M.-H. Hon, Growth mech- Chu, S.N.G., see Vandenberg 144(1994) 9
anism of star-shaped TiN crystals 142 (1994) Chu, S.N.G., see Tanbun-Ek 145 (1994) 902
Cheng, K.Y., see Pearah 150 (1995) Chu, Y.M., see Duan 141 (1994) 103
Cheng, T.M., C.Y. Chang and J.H. Huang, Chun, Y.J., Y. Okada and M. Kawabe, Ef-
Formation and characterization of fect of atomic hydrogen in highly lattice-
GaAs/ As superlattice grown by molecu- mismatched molecular beam epitaxy 150 (1995)
lar beam epitaxy at low substrate temper- Chung, S.J., see Kim 147 (1995)
ature 150 (1995) Chung, S.J., see Jung 148 (1995)
Cheng, T.S., see Novikov 146 (1995) Chung, S.J., see Jung 149 (1995)
Cheng, T.S., see Foxon 150 (1995) Chung, S.M., see Lee 141 (1994)
Cheng, X.Q., see Li 148 (1995) Cima, M.J., see McIntyre 149 (1995)
Chen Qinggui, see Wang 142 (1994) Cingolani, R., see Calcagnile 150 (1995)
Chen Yiping, see Guan 142 (1994) Cingolani, R., see Vanzetti 150 (1995)
1428 Author index to volumes 141-150
Ciuba, F.J., see Chelakara 145 (1994) 179 Crosbie, M.J., see Cockayne 142 (1994)
Ciuba, F.J., see Neff 145 (1994) 746 Crowte, R.C., see Abdul-Ridha 145 (1994)
Clancy, P., see Yu 149 (1995) 45 Crump, P.A., see Henini 150 (1995)
Clark, G.F., see Whitehouse 150 (1995) 85 Crump, P.A., see Henini 150 (1995)
Clarke, R., see Tsui 150 (1995) 960 Cui, J., see Zhang 145 (1994)
Clawson, A.R., see Jiang 147 (1995) 8 Cui, J., S. Zhang, A. Tanaka and Y. Aoyagi,
Clydesdale, G., K.J. Roberts, K. Lewtas and Study on dimer density evolution during
R. Docherty, Modelling the morphology GaAs short-pulse supersonic nozzle beam
of molecular crystals in the presence of epitaxy on (2 X 4)y initial surface by mil-
blocking tailor-made additives 141 (1994) lisecond time-resolved reflectance differ-
Cockayne, B., M.L. Crosbie, J.G. Plant and ence 150 (1995)
L.L. Taylor, Technologies for removing Cui, J., see Zhang 150 (1995)
solidified melts from precious metal cru- Cullis, A.G., see Whitehouse 150 (1995)
cibles subsequent to Czochralski growth 142 (1994) Cullis, A.G., see Ashu 150 (1995)
Cockayne, B., see Lane 143 (1994) Cunningham, J.E., M.D. Williams, R.N.
Cockayne, B., P.E. Oliver, P.A. Lane, PJ. Pathak and W.Y. Jan, Non-linear As(P)
Wright, N.A. Smith and I.R. Harris, The incorporation in GaAs,_,P, on GaAs
growth of thin films of the magnetic and InAs,_,P, on InP 150 (1995)
ternary alloys Fe,Ga,_,As, by metalor- Cunningham, J.E., K.W. Goossen, W.Y. Jan,
ganic chemical vapour deposition 148 (1995) J.A. Walker and R.N. Pathak, Monolithic
Cohen, P.I., see Dabiran 150 (1995) integration of 850 nm quantum well mod-
Cole-Hamilton, D.J., see Foster 145 (1994) ulators to very large scale integrated
Cole-Hamilton, D.J., see Foster 145 (1994) § electronics on GaAs 150 (1995) 1363
Cole-Hamilton, D.J., see Hails 145 (1994) § Curelaru, I.M., see Jang 141 (1994) 399
Collan, H., see Zhang 150 (1995)
Collins, T., see Looze 148 (1995) Dabiran, A.M. and P.1. Cohen, Surface re-
“olonna, F., see Bosacchi 150 (1995) constructions and growth mode transi-
Combescure, C., see Madigou 148 (1995) tions of AlAs(100) 150 (1995) 23
Contour, J.P., D. Ravelosona, C. Sant, C. Dabkowska, H., see Imanaka 141 (1994) 150
Frétigny, C. Dolin, J. Rioux, P. Auvray Dabkowski, A., see Imanaka 141 (1994) 150
and J. Caulet, Homoepitaxial growth of Dadgar, A., see Bimberg 145 (1994) 455
low roughness SrTiO, by pulsed laser Daitoh, Y., see Bando 150 (1995) 1074
deposition: application to YBa, Danek, M., J.-S. Huh, L. Foley and K.F.
Cu,0,_,-based thin films and superlat- Jensen, New allyl selenide and tri-
tices 141 (1994) alkylphosphine selenide precursors for
Cook, Jr., J.W., see Eason 150 (1995) metalorganic vapor phase epitaxy of ZnSe 145 (1994) §
Coriell, S.R., see Lee 141 (1994) Danek, M., K.F. Jensen, C.B. Murray and
Coriell, S.R., B.T. Murray and A.A. Cher M.G. Bawendi, Preparation of II-VI
nov, Kinetic self-stabilization of a stepped quantum dot composites by electrospray
interface: binary alloy solidification 141 (1994) organometallic chemical vapor deposi-
Coriell, S.R., see Van Vaerenbergh 147 (1995) tion 145 (1994)
Coriell, S.R., see Chernov 149 (1995) Danilewsky, A.N., Y. Okamoto, T. Nishi-
Cosimini, G.J., see Van Hove 150 (1995) naga and K.W. Benz, Theoretical study
Coston, R.L., see Tin 148 (1995) of macrostep stability under temperature
Coupat, B., J.P. Badaud, J.P. Fournier, S. gradient 146 (1995)
Er-Raji, R. Cadoret and A. Magnan, In- D’Anterroches, C., see Gérard 150 (1995)
teractions between growth kinetics and Dapkus, P.D., see Zhao 145 (1994)
physical vapour transport of Hgl, in mi- Darby, D., see Bhat 145 (1994)
crogravity 141 (1994) Darhuber, A.A., H. Straub, S. Ferreira, W.
Cowache, P., see Kampmann 146 (1995) Faschinger, E. Koppensteiner, G. Brun-
Crawford, M.H., see Schneider 145 (1994) thaler and G. Bauer, Structural investiga-
Creighton, J.R.; Accounting for stoichiome- tion of II-VI compound semiconductor
try changes on compound semiconductor quantum wires using triple-axis X-ray
surfaces 147 (1995) diffractometry 150 (1995)
Crestou, J., see Ruault 143 (1994) Das, B.K., see Prakash 144 (1994)
Croll, A., see Tegetmeier 141 (1994) Davey, R.J., see Chen 144 (1994)
Croni Bono, C., see Abbona 143 (1994) 2 David, J.P.R., see Roberts 143 (1994)
Author index to volumes 141-150
David, J.P.R., see Roberts 145 (1994) 968 Influence and incorporation of lan-
Davies, J.H., see Holland 150 (1995) 1215 thanide and chromium ions 144(1994) 70
Davis, R.F., see Sitar 141 (1994) DeVries, A.L., see Knight 143 (1994) 301
Davis, S.H., see Anderson 142 (1994) DeVries, M., see Schieber 146 (1995) 15
Davis, S.H., see Schulze 143 (1994) DiCarolis, S.A., see Helbing 146 (1995) 599
Davis, S.H., see Schulze 149 (1995) Dickmann, J., see Shitara 150 (1995) 1261
Daweritz, L., see Nérenberg 150 (1995) Di Dio, M., see Calcagnile 150 (1995) 712
Daweritz, L., H. Kostial, R. Hey, M. Ram- Dieckman, R., see Subramanian 143 (1994)
steiner, J. Wagner, M. Maier, J. Behrend Dieckmann, R., see Higuchi 148 (1995)
and M. HGricke, Atomic-scale controlled Di Egidio, M., see Ritchie 145 (1994)
incorporation of ultrahigh-density Si dop- Diéguez, E., see Santos 142 (1994)
ing sheets in GaAs 150 (1995) Diéguez, E., see Sochinskii 149 (1995)
Daweritz, L., see Wassermeier 150 (1995) Dietrich, B., see Osten 150 (1995)
Dawson-Elli, D.F., see Redwing 145 (1994) Dietz, N., A. Miller, J.T. Kelliher, D. Ven-
Debnam, W.J., see Barber 147 (1995) ables and K.J. Bachmann, Migration-en-
De Boeck, J., C. Bruynseraede, H. Bender, hanced pulsed chemical beam epitaxy of
A. Van Esch, W. Van Roy and G. Borghs, GaP on Si(001) 150 (1995)
Epitaxial ferromagnetic (r MnAl/Co) Di Forte-Poisson, M.A., C. Brylinski, S.L.
and (Co/CoAl) multilayers on GaAs Delage, H. Blanck, D. Floriot, S. Cas-
(001) grown by molecular beam epitaxy 150 (1995) 1139 sette, E. Chartier and D. Pons, LP-
De Boer, S., see Van Driel 141 (1994) 404 MOCVD grown Gal/n GPaA s HBTs for
De Keijser, M. and G.J.M. Dormans, Mod- VCOs and power amplifier MMICs 145 (1994)
elling of organometallic chemical vapour Dignam, M.M., see Wegscheider 150 (1995)
deposition of lead titanate 149 (1995) 215 Ding, X.M., see Cai 142 (1994)
Delage, S.L., see Di Forte-Poisson 145 (1994) 983 Di Paola, A., see Ritchie 145 (1994)
Dellagiovanna, M., see Ritchie 145 (1994) 447 Dittrich, H., see Zweigart 146 (1995)
Demczyk, B.G., see Bretz 141 (1994) 304 Djilali, N., see Dost 143 (1994)
Demeester, P., see Vermeire 145 (1994) 875 Djilali, N., see Kimura 143 (1994)
Demianets, L.M., see Bridenbaugh 144 (1994) 243 Djilali, N., Z. Qin and S. Dost, Role of
Demidov, D.M., see Chaly 150 (1995) 1350 thermosolutal convection in liquid phase
Demo, P., see KoZisek 147 (1995) 215 electroepitaxial growth of gallium ar-
Den, Yiwen, see Chen 148 (1995) 219 senide 149 (1995)
DenBaars, S.P., C.M. Reaves, V. Bressler- Djonev, L.K., see Nihtianova 148 (1995)
Hill, S. Varma and W.H. Weinberg, For- Djurié, Z., see Jovié 143 (1994)
mation of coherently strained self- Docherty, R., see Clydesdale 141 (1994)
assembled InP quantum islands on In- Dolin, C., see Contour 141 (1994)
GaP /G aAs(001) 145 (1994) Dong, H.K., see Li 150 (1995)
Deneuville, A., see Chateigner 148 (1995) Dong, H.K., see Li 150 (1995)
Deng, H.J., see Fan 143 (1994) Dormans, G.J.M., see De Keijser 149 (1995)
Deng, M., see Jin 149 (1995) Dost, S., Z. Qin and N. Djilali, A two-di-
Deppert, K., H.-C. Hansson, S. Jeppesen, mensional diffusion model for liquid
M.S. Miller, L. Samuelson, W. Seifert phase electroepitaxial growth of GaAs 143 (1994)
and A. Wiedensohler, Aerosol particles Dost, S., see Kimura 143 (1994)
from metalorganic vapor phase epitaxy Dost, S., see Djilali 149 (1995)
bubblers 145 (1994) Dovidenko, K., see Joshkin 147 (1995)
Derrien, J., see Natoli 146 (1995) Dreyer, K., see Chiu 150 (1995)
De Sandro, J.P. and A. Chevy, Novel design Driessen, F.A.J.M., see Hageman 145 (1994)
of graphite crucible for AgGaSe, single- Driver, R.D., see Salim 145 (1994)
crystal growth 144 (1994) Duan, X.F., K.K. Fung and Y.M. Chu, Esti-
Deswarte, A., see André 144 (1994) mation of the strain state of Ge Si, _,/S i
Detchprohm, T., K. Hiramatsu, N. Sawaki strained-layer superlattices by double-
and I. Akasaki, Metalorganic vapor phase crystal X-ray diffraction 141 (1994)
epitaxy growth and characteristics of Duffar, T., see Tatarchenko 148 (1995)
Mg-doped GaN using GaN substrates 145 (1994) Dugrand, L., see Azoulay 145 (1994)
De Vreugd, C.H., GJ. Witkamp and G.M. Dugrand, L., see Kuszelewicz 147 (1995)
van Rosmalen, Growth of gypsum. III. Dumas, J., see Othmani 144 (1994)
1430 Author index to volumes 141-150
Dumont, H., Sz. Fujita and Sg. Fujita, Egan, R.J., T.L. Tansley and V.W.L. Chin,
Metalorganic vapor phase epitaxy growth Growth of InAs from monoethy! arsine 147 (1995)
and nitrogen-doping of Zn Cd, _,S using Egawa, T., see Hasegawa 145 (1994)
photo-assistance 145 (1994) Egawa, T., see Fujita 146 (1995)
Duncan, W.J., A.S.M. Ali, E.M. Marsh and Egorov, A.V., see Golubev 146 (1995)
P.C. Spurdens, Metalorganic vapour Eguchi, M., see Yi 144 (1994)
phase epitaxy growth of InPAsSb alloys Eiche, C., see Schwarz 146 (1995)
lattice matched to InAs 143 (1994) Eiche, C., W. Joerger, M. Fiederle, D.
Dunlap, H.L., see Chow 150 (1995) Ebling, R. Schwarz and K.W. Benz, In-
Dupuis, R.D., see Chelakara 145 (1994) vestigation of CdTe:Cl grown from the
Dupuis, R.D., see Neff 145 (1994) vapour phase under microgravity condi-
Durose, K., see Tatsuoka 145 (1994) tions with time dependent charge mea-
Durose, K., see Hallam 146 (1995) surements and photoinduced current
Durst, F., see Bergunde 145 (1994) transient spectroscopy 146 (1995)
Durst, F., L. Kadinski and M. Schafer, A Eiche, C., see Laasch 146 (1995)
multigrid solver for fluid flow and mass Eiche, C., see Fiederle 146 (1995)
transfer coupled with grey-body surface Einfeldt, S., U. Lunz, H. Heinke, C.R.
radiation for the numerical simulation of Becker and G. Landwehr, Molecular
chemical vapor deposition processes 146 (1995) beam epitaxial growth and segregation of
Durst, F., see Hofmann 146 (1995) Hg, _,Zn,Se alloys 146 (1995) 427
Dutartre, D., P. Warren, F. Chollet, F. Gis- Eisele, I., see Brunner 150 (1995) 1060
bert, M. Bérenguer and I. Berbézier, De- Ekawa, M., see Fujii 146 (1995) 475
fect-free Stranski-Krastanov growth of Ekberg, J.O., see Sardela 143 (1994) 184
strained Si, _,Ge, layers on Si 142 (1994) Ekenstedt, M.J.. H. Yamaguchi and Y.
Dutta, P.S., K.S. Sangunni, H.L. Bhat and V. Horikoshi, Effects of alloy composition
Kumar, Growth of gallium antimonide by on the As desorption from and adsorp-
vertical Bridgman technique with planar tion on strained In ,Ga,_, As surfaces 150 (1995)
crystal—melt interface 141 (1994) Elliott, R., see Liu 148 (1995)
Dutta, P.S., K.S. Sangunni, H.L. Bhat and V. Ellis, A.B., see Winder 148 (1995)
Kumar, Experimental determination of Ellmer, K., see Tomm 146 (1995)
melt-solid interface shapes and actual Ellmer, K., see Thomas 146 (1995)
growth rates of gallium antimonide grown El-Masry, N.A., see Eason 150 (1995)
by vertical Bridgman method 141 (1994) Emura, S., Y. Matsui and S. Gonda, Phonon
Duval, W.M.B., see Kasparian 141 (1994) behavior and interfacial stress in the
Dynna, M. and G.C. Weatherly, Twinning strained (InAs),,/(GaAs),, ultrathin su-
and the formation of the diamond hexag- perlattices 150 (1995)
onal phase in Si-Ge short period super- Endoh, Y., see Imaizumi 150 (1995)
lattices 142 (1994) Engel, A., see Rudolph 147 (1995) 297
Engelhardt, C.M., see Niitzel 150 (1995) 1011
Erbert, G., see Bugge 145 (1994) 907
Eason, D., J. Ren, Z. Yu, C. Hughes, J.W. Ericson, F., K. Hjort, J.-A. Schweitz, S. An-
Cook, Jr., J.F. Schetzina, N.A. El-Masry, dersson and E. Janzén, Micro-scribes in
G. Cantwell and W.C. Harsh, Blue and semi-insulating GaAs studied by cross-
green light-emitting diode structures sectional transmission electron mi-
grown by molecular beam epitaxy on croscopy 143 (1994)
ZnSe substrates 150 (1995) 718 Ermer, J., see Woelk 145 (1994)
Eaves, L., see Novikov 146 (1995) 340 Erné, B., see Weyher 141 (1994)
Ebe, H., see Nishino 146 (1995) 619 Er-Raji, S., see Coupat 141 (1994)
Eberl, K., see Shitara 150 (1995) 1261 Esherick, P., see Tompa 145 (1994)
Eberstein, W., Y. Georgalis and W. Saenger, Eshita, T., see Ohori 145 (1994)
Molecular interactions in crystallizing Esser, N., see Krost 145 (1994)
lysozyme solutions studied by photon Etienne, B., F. Laruelle, J. Bloch, L. Sfaxi
correlation spectroscopy 143 (1994) 71 and F. Lelarge, Organized growth of
Ebling, D., see Eiche 146 (1995) 98 GaAs/AIAs lateral structures on atomic
Ebling, D., see Fiederle 146 (1995) 142 step arrays: what is possible to do? 150 (1995)
Eckel, M., see Scholz 145 (1994) 242 Evans, G.H., see Tompa 145 (1994)
Eckert, J.0., see Bridenbaugh 144 (1994) 243 Evtimova, S., B. Arnaudov and I. Yanchev,