Table Of Content

Journal of Crystal Growth 133 (1993) 338-340 JOURNAL OF CRYSTAL North-Holland GROWTH Author index Abe, S., see Mori 133 (1993) 80 Eguchi, M., see Watanabe 133 (1993) 23 Aindow, M., T.T. Cheng, N.J. Mason, T.-Y. Seong and P.J. Walker, Geometry and Faith, M., see Davis 133 (1993) 230 interface structure of island nuclei for Fan, S.-J., see Xu 133 (1993) 95 GaSb buffer layers grown on (001) GaAs Farrow, R.F.C., G.R. Harp, R.F. Marks, T.A. by metalorganic vapour phase epitaxy 133 (19931)6 8 Rabedeau, M.F. Toney, D. Weller and Anbukumar, S., see Ravi 133 (19932)1 2 S.S.P. Parkin, Epitaxial growth of Pt on Aoki, Y., see Sakaki 133 (19933)2 9 basal-plane sapphire: a seed film for arti- Arkenbout, G., see Lin 133 (19933)2 2 ficially layered magnetic metal structures 133 (1993) 47 Armas, B., see Rodriguez-Clemente 133 (1993) 59 Figueras, A., see Rodriguez-Clemente 133 (1993) 59 Aspar, B., see Rodriguez-Clemente 133 (1993) 59 Filipovié-Vincekovié, N., see Skrtié 133 (1993) 189 Aulombard, R.L., see Cloitre 133 (19931)0 1 Follsteadt, D.M., see Biefeld 133 (1993) 38 Azema, N., see Rodriguez-Clemente 133 (1993) 59 Fukuda, T., see Chani 133 (1993) 181 Babié-Ivanéié, V., see Skrtié 133 (1993) 189 Georgalis, Y., see Heinrichs 133 (1993) 196 Baucom, K.C., see Biefeld 133 (1993) 38 Gil, B., see Cloitre 133 (1993) 101 Bennema, P., see Lin 133 (1993) 322 Griesche, J., see Weidemann 133 (1993) 75 Biefeld, R.M., K.C. Baucom, S.R. Kurtz and D.M. Follsteadt, The growth of Harp, G.R., see Farrow 133 (1993) 47 InP, _,Sb, by metalorganic chemical va- Harsdorff, M., see Heyn 133 (19932)4 1 por deposition 133 (1993) 38 Hayafuji, N., see Mihashi 133 (19932)8 1 Boué, F., F. Lefaucheux, M.C. Robert and I. He Chongfan, see Xu 133 (1993) 267 Rosenman, Small angle neutron scatter- Heinrichs, W., Y. Georgalis, H. Schdnert ing study of lysozyme solutions 133 (1993) 246 and W. Sanger, Influence of cyclic tem- Briot, N., see Cloitre 133 (1993) 101 perature changes on protein precrys- Briot, O., see Cloitre 133 (1993) 101 talline aggregates 133 (1993) 196 Heyn, Ch. and M. Harsdorff, Flux control Chani, V.I., K. Shimamura, K. Inoue and T. and calibration of an As effusion cell in a Fukuda, Huntite-borate crystallization in molecular beam epitaxy system for GaAs stoichiometric melts 133 (1993) 181 and AlGaAs with a qudrupole mass spec- Chen Xiangiu, see Xu 133 (1993) 267 trometer 133 (1993) 241 Cheng, T.T., see Aindow 133 (1993) 168 Heywood, B.R., see Walsh 133 (1993) 1 Cloitre, T., N. Briot, O. Briot, B. Gil and Hibiya, T., see Watanabe 133 (1993) 23 R.L. Aulombard, Low pressure metalor- Hou Wenbo, Yuan Duorong, Xu Dong, ganic vapour-phase epitaxy growth of Zhang Nan, Yu Wentao, Liu Mingguo, ZnTe using triethylamine dimethyl zinc Tao Xutang, Sun Suoying and Jiang Min- adduct 133 (1993) 101 hua, A new organometallic nonlinear op- Combescure, C., see Rodriguez-Clemente 133 (1993) 59 tical material — triallylthiourea mercury bromide (ATMB) crystal: growth and Davis, T.J., T. McAllister, V. Maslen, S.W. structure 133 (1993) 71 Wilkins, M. Faith and P. Leech, Mathe- Hsu, C.C., T.K.S. Wong and I.H. Wilson, matical and numerical models of CdTe Surface morphology of metalorganic deposition in a pre-cracking metalorganic vapour phase epitaxy grown InP observed chemical vapour deposition reactor 133 (1993) 230 by atomic force microscopy 133 (1993) 185 Deppert, K., and J. Jonsson, On the effect of Hu, W.R., see Xiong 133 (1993) 155 arsine for the decomposition of triethyl- gallium during epitaxial growth of GaAs 133 (1993) 296 Inoue, K., see Chani 133 (1993) 181 Doyle, I.R., see Ryall 133 (1993) 87 Ishii, M., see Sakaki 133 (1993) 329 Durand, J., see Rodriguez-Clemente 133 (1993) 59 Itaya, K., see Suzuki 133 (1993) 303 Author index 339 Iwasa, I., see Ota 133 (1993) 207 Marks, R.F., see Farrow 133 (1993) 47 Izumi, S., N. Yoshida, H. Takano, K. Nishi- Marshall, V.R., see Ryall 133 (1993) 87 tani and M. Otsubo, Study on the accu- Maslen, V., see Davis 133 (19932)3 0 mulated impurities at the epilayer /sub- Mason, N.J., see Aindow 133 (19931)6 8 strate interface and their influence on McAllister, T., see Davis 133 (19932)3 0 the leakage current of metal—semicon- McPherson, A., see Malkin 133 (1993) 29 ductor-—field effect transistors 133 (1993) 123 Mihashi, Y., M. Miyashita, N. Hayafuji, N. Kaneno, S. Kageyama, S. Karakida, H. Jacobs, K., see Weidemann 133 (1993) 75 Kizuki, A. Shima and T. Murotani, Jiang Minhua, see Hou 133 (1993) 71 Large-scale metalorganic chemical vapor Jonsson, J., see Deppert 133 (1993) 296 deposition growth of highly reliable 780 mm AlGaAs multiple quantum well Kageyama, S., see Mihashi 133 (19932)8 1 high-power lasers 133 (1993) 281 Kakimoto, K., see Watanabe 133 (1993) 23 Miyashita, M., see Mihashi 133 (1993) 281 Kaneno, N., see Mihashi 133 (19932)8 1 Mori, T., N. Kubota, S. Abe, S. Kishimoto, Karakida, S., see Mihashi 133 (19932)8 1 S. Kumon and M. Naruse, Spherulitic Kaya, M., see Li 133 (19931)7 5 crystallization of aspartame from aque- Kingston, J.L., see Walsh 133 (1993) 1 ous solution in a two-dimensional cell 133 (1993) 80 Kishimoto, S., see Mori 133 (1993) 80 Murotani, T., see Mihashi 133 (1993) 281 Kizuki, H., see Mihashi 133 (19932)8 1 Kou, S., see Lan 133 (19933)0 9 Nakamuta, Y., see Sakaki 133 (1993) 329 Koutsoukos, P.G., see Sabbides 133 (1993) 13 Naruse, M., see Mori 133 (1993) 80 Krier, A., see Mao 133 (19931)0 8 Nishikawa, Y., see Suzuki 133 (1993) 303 Kubota, N., see Mori 133 (1993) 80 Nishitani, K., see Izumi 133 (1993) 123 Kidela, R., Growth of In,_,Ga,As by vapour epitaxy and analysis of growth Ogawa, H., H. Ohta and Y. Waseda, Ther- conditions 133 (1993) 289 mal diffusivity measurement of LiNbO, Kumon, S., see Mori 133 (1993) 80 melts doped with MgO by the laser flash Kurtz, S.R., see Biefeld 133 (1993) 38 method 133 (1993) 255 Ohta, H., see Ogawa 133 (1993) 255 Lan, C.W. and S. Kou, Effect of rotation on Okajima, M., see Suzuki 133 (1993) 303 radial dopant segregation in microgravity Ota, T., S. Otake and I. Iwasa, Metalorganic floating-zone crystal growth 133 (1993) 309 chemical vapor deposition growth of Ga- Leech, P., see Davis 133 (1993) 230 rich (x < 0.5) Ga, In,_,P on GaAs 133 (1993) 207 Lefaucheux, F., see Boué 133 (1993) 246 Otake, S., see Ota 133 (1993) 207 Li, J.-Z., M. Kaya and R.W. Smith, Growth Otsubo, M., see Izumi 133 (1993) 123 characteristics of y-(Fe,Cr),;C eutectic during unidirectional solidification 133 (1993) 175 Parkin, S.S.P., see Farrow 133 (1993) 47 Liao Jingying, see Xu 133 (1993) 267 Potapenko, S.Yu., Two-dimensional mass Lin, X.Y., G. Arkenbout, P. Bennema and P. transfer models for high-rate crystal van Hoof, The relation between rough growth from solution 133 (1993) 132 and flat growth of crystal faces: an effec- Potapenko, S.Yu., Threshold for step perco- tive approach to volume transport resis- lation through impurity fence 133 (1993) 141 tances 133 (1993) 322 Potapenko, S.Yu., Moving of step through Liu Mingguo, see Hou 133 (1993) 71 impurity fence 133 (1993) 147 Liu, Z.T., see Zhang 133 (1993) 117 Louchev, O.A., The influence of natural Rabedeau, T.A., see Farrow 133 (1993) 47 convection on the formation of a molten Ramasamy, P., see Ravi 133 (1993) 212 zone under optical heating 133 (1993) 261 Ravi, G., S. Ankubumar and P. Ramasamy, On the growth and characterization of Malkin, A.J. and A. McPherson, Crystalliza- mixed crystals of the triglycine sulphate tion of pumpkin seed globulin: growth family 133 (1993) 212 and dissolution kinetics 133 (1993) 29 Robert, M.C., see Boué 133 (1993) 246 Mann, S., see Walsh 133 (1993) 1 Rodriguez-Clemente, R., B. Aspar, N. Mao, Y., and A. Krier, Liquid phase epitax- Azema, B. Armas, C. Combescure, J. ial growth and photoluminescence of Durand and A. Figueras, Morphological InAsb grown on GaSb substrates from properties of chemical vapour deposited antimony solution 133 (1993) 108 AIN films 133 (1993) 59 340 Author index Rosenman, I., see Boué 133 (1993) 246 ments in vapour cyrstal growth fluid dy- Ryall, R.G., see Ryall 133 (1993) 87 namics 133 (1993) 217 Ryall, R.L., R.G. Ryall, I.R. Doyle and V.R. Marshall, The dependence of the mea- Walker, P.J., see Aindow 133 (1993) 168 surement of crystal growth on the state Walsh, D., J.L. Kingston, B.R. Heywood and of crystal aggregation: implication for S. Mann, Influence of monosaccharides urolithiasis research 133 (1993) 87 and related molecules on the morphology of hydroyxapatite 133 (1993) 1 Sabbides, T.G. and P.G. Koutsoukos, The Waseda, Y., see Ogawa 133 (1993) 255 crystallization of calcium carbonate in ar- Watanabe, M., M. Eguchi, K. Kakimoto and tificial seawater; role of the substrate 133 (1993) 13 T. Hibiya, Double-beam X-ray radiogra- Sakaki, M., Y. Aoki, Y. Nakamuta and M. phy system for three-dimensional flow vi- Ishii, Dendritic diamonds synthesized by sualization of molten silicon convection 133 (1993) 23 simple hot-filament-assisted chemical va- Weidemann, G., J. Griesche and K. Jacobs, por deposition 133 (19933)2 9 Kinematical calculations on reflection Sanger, W., see Heinrichs 133 (19931)9 6 high-energy electron diffraction involving Sasaki, M., see Yoshida 133 (19932)0 1 absorption 133 (1993) 75 Savino, R., see Viviani 133 (19932)1 7 Weller, D., see Farrow 133 (1993) 47 Schonert, H., see Heinrichs 133 (19931)9 6 Wilkins, S.W., see Davis 133 (1993) 230 Seong, T.-Y., see Aindow 133 (19931)6 8 Wilson, I.H., see Hsu 133 (1993) 185 Shao Peifa, see Xu 133 (19932)6 7 Wong, T.K.S., see Hsu 133 (1993) 185 Shen Bingfu, see Xu 133 (19932)6 7 Shima, A., see Mihashi 133 (19932)8 1 Xiong, B., and W.R. Hu, Influence of low- Shimamura, K., see Chani 133 (19931)8 1 gravity level on crystal growth in floating Skrié, D., N. Filipovic-Vincekovié, V. Babié- zone 133 (1993) 155 Ivancéi¢é and Lj. TuSek-Bozi¢, Influence of Xu Dong, see Hou 133 (1993) 71 sodium cholate on the crystallization of Xu Xuewu, Liao Jingying, Shen Bingfu, Shao calcium oxalate 133 (1993) 189 Peifa, Chen Xiangiu and He Chongfan, Slobozhanin, L.A., M.A. Svechkareva and Bi,»SiO.) single crystal growth by the V.A. Tatarchenko, Stability of the melt Bridgman method 133 (1993) 267 meniscus during growth of crystals by the Xu, Y.-B., and S.-J. Fan, Accelerated cru- technique of pulling from shaper (TPS) cible rotation technique: Bridgman under zero-gravity conditions 133 (1993) 273 growth of Li,B,O,; single crystal and Smith, R.W., see Li 133 (1993) 175 simulation of the flows in the crucible 133 (1993) 95 Sugawara, H., see Suzuki 133 (1993) 303 Sun Suoying, see Hou 133 (1993) 71 Yoshida, N. see Izumi 133 (1993) 123 Suzuki, M., K. Itaya, Y. Nishikawa, H. Su- Yoshida, S., and M. Sasaki, New damage-free gawara and M. Okajima, Reduction of residual oxygen incorporation and deep patterning method of a GaAs oxide mask levels by substrate misorientation on In and GaAs selective growth using the GaAlP alloys 133 (1993) 303 metalorganic molecular beam _ epitaxy Svechkareva, M.A., see Slobozhanin 133 (1993) 273 method 133 (19932)0 1 Yu Wentao, see Hou 133 (1993) 71 Takano, H., see Izumi 133 (1993) 123 Yuan Duorong, see Hou 133 (1993) 71 Tao Xutang, see Hou 133 (1993) 71 Tatarchenko, V.A., see Slobozhanin 133 (1993) 273 Zhang, G.F., X. Zheng and Z.T. Liu, Nucle- Toney, M.F., see Farrow 133 (1993) 47 ation and growth behaviour of diamond TuSek-BoZié, Lj., see Skrti¢ 133 (1993) 189 films deposited on chemically etched tita- nium alloy substrates 133 (1993) 117 Van Hoof, P., see Lin 133 (1993) 322 Zhang Nan, see Hou 133 (1993) 71 Viviani, A. and R. Savino, Recent develop- Zheng, X., see Zhang 133 (1993) 117 Journal of Crystal Growth 133 (1993) 341-342 JOURNAL OF CRYSTAL North-Holland GROWTH Subject index Aluminum Gallium — gallium arsenide 241, 281 — antimonide 168 — nitride 59 — arsenide 123, 201, 241, 296 Apparatus — indium phosphide 207 — for thin film growth Globulin 29 — — by molecular beam epitaxy 241 — for miscellaneous purposes Huntite borate 181 — — flow visualization of molten silicon 23 Hydroxyapatite 1 Aragonite 13 L-Arginine phosphate 132 Indium Aspartame 80 — antimonide arsenide 108 — antimonide phosphide 38 arsenide phosphide 185 Bismuth gallium aluminum phosphide 303 — silicon oxide 267 gallium arsenide 289 — phosphide 185 Cadmium Iron — telluride 230 — chromium carbide (y) 175 Calcite 13 Calcium Kinetics — carbonate 13 of aggregation 87, 196 — oxalate 87, 189 of growth 13, 29, 80, 87, 101, 246, 322 Cellular growth of interface control 59 - of y-iron chromium carbide 175 of nucleation 29, 196, 246 Computer simulation of steps 141, 147 — of floating zone crystal growth under microgravity 155, 309 of volume diffusion 322 — of metalorganic chemical vapor deposition 230 Constitutional supercooling L-Arginine phosphate 132 — theory of 132 Lasers, see Device characterization Convection 95, 155, 217, 261, 309 Lithium — niobate 255 — tetraborate 95 Dendritic growth Lysozyme 196, 246 — of diamond 329 Device characterization Melt growth technique lasers 281 — by Bridgman-—Stockbarger method optoelectronic materials 108 — — of bismuth silicon oxide 267 pyroelectric materials 212 — of lithium tetraborate 95 quantum wells 281 by Czochralski method transistors 123 — — of silicon 23 Diamond 117, 329 — theory of 273 Dissolution by floating zone method — of pumpkin seed globulin 29 — theory of 309 — by uniaxial solidification Epitaxy, see Thin film growth - — of y-iron chromium carbide 175 Eutectic growth by zone melting - of y-iron chromium carbide 175 theory of 261 342 Subject index Microgravity, growth under Surface processes, theory of 141, 147 — of silicon 155 Surface structure — theory of 155, 217, 273, 309 — of aspartame 80 Morphological stability — of indium phosphide 185 — of aluminum nitride 59 — of zinc selenide 75 — of gallium indium phosphide 207 — control of, by additives 1 Thin film growth by liquid phase epitaxy Nucleation — of gallium arsenide 123 — of aspartame 80 — of indium antimonide arsenide 108 — of diamond 117 by metalorganic molecular beam epitaxy — of gallium antimonide 168 — of gallium arsenide 296 Numbers — of zinc telluride 101 Grashof 132 by molecular beam epitaxy Peclet 132 of aluminum gallium arsenide 241 Prandtl 132 of gallium arsenide 241 Rayleigh 132, 261 of platinum 47 Reynolds 23 — of zinc selenide 75 by vapor phase epitaxy Optoelectronic materials, see Device characterization through chemical vapor deposition — of aluminum nitride 59 Platinum 47 — of diamond 117, 329 Potassium through metalorganic chemical vapor deposition — dihydrogen phosphate 132 of aluminum gallium arsenide 281 Property measurements of aluminum nitride 59 — thermal diffusivity of lithium niobate 255 of cadmium telluride 230 Pumpkin seed globulin 29 of gallium antimonide 168 of gallium arsenide 201, 296 Quantum wells, see Device characterization of gallium indium phosphide 207 of indium antimonide phosphide 38 Silicon 23, 155 of indium gallium aluminum phosphide 303 Solution growth technique of indium gallium arsenide 289 by flux method of indium phosphide 185 — of huntite borate 181 of zinc telluride 101 by low temperature method — — — theory of 289 of L-Arginine phosphate 132 Triallylthiourea mercury bromide 71 of calcium carbonate 23 Triglycine of calcium oxalate 87, 189 — sulpho-phosphate 212 of hydroxyapatite 1 — sulphate 212 of lysozyme 196, 246 of potassium dihydrogen phosphate 132 Vapor growth technique of pumpkin seed globulin 29 — theory of 217 of triallylthiourea mercury bromide 71 Vaterite 13 of triglycine sulpho-phosphate 212 — — of triglycine sulphate 212 Zinc Surface morphology — selenide 75 — of aluminum nitride 59 — telluride 101