Journal of Crystal Growth 1993: Vol 129 Index

11 Pages·1993·3.3 MB·English

Journal of Crystal Growth 129 (1993) 795-800 joursscr CRYSTAL
North-Holland GROWTH
Author index
Agarwal, M.K., P.D. Patel and S.K. Gupta, Champness, C.H., see Shukri 129 (1993) 107
Effect of doping MoSe, single crystals Chang, Ying-Chuan, De-Sen Hou, Yu-De
with rhenium 129 (1993) 559 Yu, Si-Shen Xie and Tang Zhou, Color
Angelier, B., see Rouzaud 129 (1993) 173 center and domain structure in single
Armas, B., see Aspar 129 (1993) 56 crystals of LaAlO, 129 (1993) 362
Aspar, B., R. Rodriguez-Clemente, A. Changkang, Chen, Hu Yongle, B.M.
Figueras, B. Armas and C. Combescure, Wanklyn and J.W. Hodby, Crystal growth
Influence of the experimental conditions of CuO from BaO flux 129 (1993) 239
on the morphology of CVD AIN films 129 (1993) 56 Chatillon, C., Critical analysis of the thermo-
Ausloos, M., see Cloots 129 (1993) 394 dynamic properties of the In—Se gaseous
Azéma, N., see Meng 129 (1993) 610 and solid phases 129 (1993) 297
Azéma, N., J. Durand, R. Berjoan, C. Dupuy, Chatillon, C. and J.-Y. Emery, Thermody-
J.L. Balladore and L. Cot, Plasma-en- namic analysis of molecular beam epitaxy
hanced chemical vapour deposition of of compounds in the In—Se system 129 (1993) 312
AIN (1010) on Si (100): microstructural Chen Changkang, see Changkang 129 (1993) 239
study of the interlayers 129 (1993) 621 Chen Fangyu, see Kaito 129 (1993) 367
Chen, Nuofu, Ultrasonic etching of GaAs in
Balladore, J.L., see Azéma 129 (1993) 621 CrO,—HF aqueous solutions 129 (1993) 777
Bennema, P., see Cherepanova 129 (1993) 202 Chen Qinggui, see Wang 129 (1993) 774
Berjoan, R., see Azéma 129 (1993) 621 Chen, Z.H., see Li 129 (1993) 532
Bilger, G., see Waag 129 (1993) 243 Cherepanova, T.A., A.V. Stekolnikov and P.
Blachman, R., see Bordui 129 (1993) 371 Bennema, Weighted-density functional
Boeck, T., C. Frank, H. Giinther and K. approach for the solid—liquid interfaces
Jacobs, Indium doping of Hg,_,Cd,Te in electrolytes 129 (1993) 202
grown by liquid phase epitaxy 129 (1993) 233 Cloots, R., A. Rulmont, T. Krekels, G. Van
Bordui, P.F., G.D. Calvert and R. Blachman, Tendeloo, P. Diko and M. Ausloos, In-
Immersion-seeded growth of large bar- vestigation by electron diffraction mi-
croscopy of (RE)Ba,Cu,0,,,S, poly-
ium borate crystals from sodium chloride
solution 129 (1993) 371 crystalline ceramic compounds: interpre-
Brés, E.F., G. Moebus, H.-J. Kleebe, G. tation of unexpected superstructures and
Pourroy, J. Werkmann and G. Ehret, influence of secondary phases 129 (19933)9 4
High resolution electron microscopy Cockayne, B., see Mackey 129 (19932)6 9
study of amorphous calcium phosphate 129 (1993) 149 Cole-Hamilton, D.J., see Yates 129 (19932)1 5
Brokman, A., see Vilenkin 129 (1993) 67 Combescure, C., see Aspar 129 (1993) 56
Broom, R.F., see Catana 129 (1993) 779 Coméra, J., see Rouzaud 129 (19931)7 3
Bryskiewicz, T. and A. Laferriére, Growth of Contamin, P., see Rouzaud 129 (19931)7 3
alloy substrates by liquid phase elec- Coriell, S.R., see Murray 129 (1993) 70
troepitaxy; theoretical considerations 129 (1993) 429 Cot, L., see Meng 129 (19936)1 0
Cot, L., see Azéma 129 (19936)2 1
Crary, S.B., see Sherwin 129 (19937)9 4
Calvert, G.D., see Bordui 129 (1993) 371
Cros, B., see Meng 129 (19936)1 0
Camel, D., see Drevet 129 (1993) 549
Crosbie, M.J., see Mackey 129 (19932)6 9
Casey, N.L., see Huffman 129 (1993) 525
Cui, S.F., see Li 129 (19935)3 2
Castaing, J., see Patriarche 129 (1993) 375
Cullis, A.G., see Mackey 129 (19932)6 9
Catana, A., R.F. Broom, R. Germann and P.
Roentgen, Regrowth of InP by MOVPE
on dry-etched heterostructures of InP- Dash, J.G., see Elbaum 129 (1993) 491
GalInAsP 129 (1993) 779 De Croon, M.H.J.M., see Hageman 129 (1993) 281
Champness, C.H., see Yip 129 (1993) 102 Derby, J.J., see Xiao 129 (1993) 593
796 Author index
Diko, P., see Cloots 129 (1993) 394 metalorganic chemical vapour deposition
Dong QOiwei, see Wang 129 (1993) 774 grown GaAs and AlGaAs using diethyl-
Dong Rongkang, see Wang 129 (1993) 774 zinc aS precursor 129 (1993) 281
Drevet, B., J.P. Garandet, D. Camel and J.J. Hayashi, S., see Echigoya 129 (1993) 699
Favier, Influence of thermal buoyancy on Henry, C.R., M. Meunier and S. Morel, He-
fibrous eutectic growth. I. Segregation lium diffraction study of the nucleation
results in the Sn—Cu,Sn, system 129 (1993) 549 and growth of palladium clusters on MgO
Dupuy, C., see Azéma 129 (1993) 621 (100) 129 (19934)1 6
Durand, J., see Meng 129 (1993) 610 Herbillon, F., see Rouzaud 129 (19931)7 3
Durand, J., see Azéma 129 (1993) 621 Hicks, R.F., see Liu 129 (19931)1 1
Hillner, P.E., see Gratz 129 (19937)8 9
Echigoya, J. and S. Hayashi, Directional so- Hirano, R., see Nakamura 129 (19934)5 6
lidification of CoO-ZrO, eutectics 129 (1993) 699 Hochberg, A.K., see Love 129 (19931)1 9
Ehret, G., see Brés 129 (1993) 149 Hodby, J.W., see Changkang 129 (19932)3 9
Eichinger, P., see Zimmermann 129 (1993) 582 Hommel, D., see Waag 129 (19932)4 3
Elbaum, M., S.G. Lipson and J.G. Dash, Huo, Chongru, see Xu 129 (19935)0 6
Optical study of surface melting on ice 129 (1993) 491 Hou, De-Sen, see Chang 129 (19933)6 2
Elta, M.E., see Sherwin 129 (1993) 794 Howard, S.B., see Rosenberger 129 (1993) 1
Emel’chenko, G.A., see Zhokhov 129 (1993) 786 Hu Yongle, see Yongle 129 (19932)3 9
Emery, J.-Y., see Chatillon 129 (1993) 312 Huffman, J.E. and N.L. Casey, Growth
methods for high purity Ge and Ge: Ga
Favier, J.J., see Rouzaud 129 (19931)7 3 homoepitaxy 129 (1993) 525
Favier, J.J., see Drevet 129 (19935)4 9
Figueras, A., see Aspar 129 (1993) 56 Ida, M., K. Kurishima and T. Kobayashi,
Filz, T., see Zimmermann 129 (1993) 37 Selective InGaAs growth at low tempera-
Frank, C., see Boeck 129 (19932)3 3 ture by metalorganic chemical vapor de-
Fujiyasu, H., see Tatsuoka 129 (19936)8 6 position (MOCVD) with high-speed ro-
Fukuda, T., see Pan 129 (19933)6 5 tating susceptor 129 (19937)8 3
Fiiredi-Milhofer, H., see Skrti¢ 129 (19934)4 9 Iga, K., see Uchida 129 (19932)7 5
Furukawa, Y. and S. Kohata, Temperature Ikeda, E., see Namamura 129 (19934)5 6
dependence of the growth form of nega- Ishihara, T., see Oda 129 (1993) 30
tive crystal in an ice single crystal and Ishizawa, N., see Tanaka 129 (19936)8 3
evaporation kinetics for its surfaces 129 (1993) 571 Ivanov, I., see Yakimova 129 (19931)4 3
Gao, D., A.W. Stevenson, S.W. Wilkins and Jacobs, K., see Boeck 129 (1993) 233
G.N. Pain, Microcracks in a GaAs/Si Jones, A.C., Metalorganic precursors for
wafer studied by X-ray diffraction 129 (19931)3 4 vapour phase epitaxy 129 (1993) 728
Garandet, J.P., see Drevet 129 (19935)4 9 Junghanns, T., see Romanov 129 (1993) 691
Garside, J., see Matsuoka 129 (19933)8 5
Ge, Peiwen, see Xu 129 (19935)0 6 Kaito, C., Y. Saito, T. Watanabe, A. Mat-
Germann, R., see Catana 129 (19937)7 9 sumoto, K. Ohtsuka and Chen Fangyu,
Gervais, M., see Pellerin 129 (1993) 21 Growth mechanism of tubular ultrafine
Giling, L.J., see Hageman 129 (19932)8 1 particles of tin sulfide 129 (1993) 367
Gimmnich, P., see Zimmermann 129 (1993) 37 Karpov, S.Yu., Yu.V. Kovalchuk, V.E. My-
Glass, J.T., see Wang 129 (1993) 45 achin and Yu.V. Pogorelskii, Instability
Gobel, E.O., see Zimmermann 129 (1993) 37 of III-V compound surfaces due to liq-
Gosele, U., see Zimmermann 129 (19935)8 2 uid phase formation 129 (1993) 563
Gratz, A.J. and P.E. Hillner, Poisoning of Katsura, S., see Nakamura 129 (1993) 456
calcite growth viewed in the atomic force Kiselev, A.N., A.A. Velichko and LA.
microscope (AFM) 129 (1993) 789 Okomelchenko, High-resolution electron
Gryaznov, V.G., see Romanov 129 (1993) 691 microscopy of epitaxial layers and inter-
Giinther, H., see Boeck 129 (1993) 233 faces in the CaF,/Si (100) and
Gupta, S.K., see Agarwal 129 (1993) 559 CaF,/Si/CaF,/Si (100) heterosystems 129 (1993) 163
Kleebe, H.-J., see Brés 129 (1993) 149
Haddad, G.I., see Sherwin 129 (1993) 794 Klemenz, C. and H.J. Scheel, Liquid phase
Hageman, P.R., M.H.J.M. de Croon, X. Tang epitaxy of high-7, superconductors 129 (1993) 421
and L.J. Giling, Pressure and tempera- Kobayashi, T., see Ida 129 (1993) 783
ture dependence of Zn incorporation in Kohata, S., see Furukawa 129 (1993) 571
Author index
Komori, T., see Tanaka 129 (1993) 683 Matyi, R.J., M.R. Melloch and J.M. Woodall,
Kovalchuk, Yu.V., see Karpov 129 (1993) 563 Structural analysis of as-deposited and
Koyama, F., see Uchida 129 (1993) 275 annealed low-temperature gallium ar-
Kramer, V., see Post 129 (1993) 485 senide 129 (19937)1 9
Krekels, T., see Cloots 129 (1993) 394 McFadden, G.B., see Murray 129 (1993) 70
Kubel, F. and H. Schmid, Growth, twinning Melloch, M.R., see Matyi 129 (19937)1 9
and etch figures of ferroelectric /ferro- Meng, G.Y., N. Azéma, B. Cros, J. Durand
elastic dendritic BiFeO, single domain and L. Cot, The growth mechanism of
crystals 129 (19935)1 5 (1010) oriented AIN thin films by low-
Kiuhne, H. and H. Richter, Control of frequency plasma-enhanced metalorganic
Si,_,Ge, growth from the gas phase. I. chemical vapour deposition process 129 (19936)1 0
The effect of the layer source gases 129 (1993) 321 Meunier, M., see Henry 129 (1993) 416
Kurishima, K., see Ida 129 (1993) 783 Middleman, S., see Love 129 (1993) 119
Kurpas, P., see Zimmermann 129 (1993) 37 Miyamoto, T., see Uchida 129 (1993) 275
Kuwabara, H., see Tatsuoka 129 (1993) 686 Moebus, G., see Brés 129 (1993) 149
Monaco, L.A. and F. Rosenberger, Growth
and etching kinetics of tetragonal lyso-
Laferriére, A., see Bryskiewicz 129 (1993) 429 zyme 129 (1993) 465
Landwehr, G., see Waag 129 (1993) 243 Morel, S., see Henry 129 (1993) 416
Li, J.H., Z.H. Mai, S.F. Cui, Z.H. Chen and Mori, H., see Takagishi 129 (1993) 443
M.H. Li, Characterization of Al,Ga,_,
Moriya, K., see Wada 129 (1993) 405
As/ Al,Ga,_,As/ GaAs step multi- Munns, G.O., see Sherwin 129 (1993) 794
quantum wells on (001) GaAs by X-ray
Murray, B.T., S.R. Coriell, G.B. McFadden,
double-crystal diffraction 129 (1993) 532
A.A. Wheeler and B.V. Saunders, Gravi-
Li, M.H., see Li 129 (1993) 532
tational modulation of thermosolutal
Lipson, S.G., see Elbaum 129 (1993) 491
convection during directional solidifica-
Liu, B., R.F. Hicks and J.J. Zinck, Reaction tion 129 (1993) 70
engineering of photo-assisted chemical Myachin, V.E., see Karpov 129 (1993) 563
vapor deposition 129 (1993) 111
Lorberth, J., see Zimmermann 129 (1993) 37
Nakadate, S., see Onuma 129 (1993) 706
Love, A., S. Middleman and A.K. Hochberg,
Nakamura, M., S. Katsura, N. Makino, E.
The dynamics of bubblers as vapor deliv-
Ikeda, K. Suga and R. Hirano, Effect of
ery systems 129 (1993) 119
substrate misorientation on tear-drop-like
Louchev, O.A., The influence of radiative
hillock defect densities in InP and
heat transfer on the limit pull rate in
GalnAsP grown by metalorganic chemi-
Czochralski crystal growth of silicon 129 (1993) 179
cal vapor deposition 129 (19934)5 6
Lu, Da-cheng, Growth of wide band gap
Nakanishi, Y., see Tatsuoka 129 (19936)8 6
immiscible II-VI alloys by metalorganic
Nepijko, S.A., see Romanov 129 (19936)9 1
vapor phase epitaxy 129 (1993) 629
Nikolov, V.S., see Shumov 129 (19936)3 5
Lumley, J.L., see Ristorcelli 129 (1993) 249
Nishihama, J., see Oda 129 (1993) 30
Lundstrom, T., see Okada 129 (1993) 543
Noda, Y., see Tanaka 129 (19936)8 3
Noérlund Christensen, A., Crystal growth and
characterization of the transition metal
Mackey, K.J., G.M. Williams, M.J. Crosbie,
silicides MoSi, and WSi, 129 (1993) 266
A.G. Cuilis and B. Cockayne, A study of
Nyce, T.A., see Rosenberger 129 (1993) 1
titanium-doped yttrium orthoaluminate
using scanning photoluminescence and
low temperature cathodoluminescence 129 (19932)6 9 Oda, K., T. Saito, J. Nishihama, T. Ishihara
Mai, Z.H., see Li 129 (19935)3 2 and M. Sato, Numerical simulation of
Makino, N., see Nakamura 129 (19934)5 6 melt growth: prediction of solid—liquid
Mantovani, G., see Saska 129 (1993) 91 interface shape 129 (1993) 30
Marfaing, Y., see Patriarche 129 (19933)7 5 Odier, P., see Pellerin 129 (1993) 21
Marschner, T., see Zimmermann 129 (1993) 37 Offerman, H., see Tulke 129 (1993) 13
Marumo, F., see Tanaka 129 (19936)8 3 Ohtsuka, K., see Kaito 129 (1993) 367
Matsumoto, A., see Kaito 5 129 (19933)6 7 Okada, S. and T. Lundstrém, Single crystal
Matsuoka, M. and J. Garside, The signifi- growth of V,B, using the high-tempera-
cance of mass and heat transfer during ture aluminium solution method 129 (1993) 543
crystal growth from solutions and melts 129 (1993) 385 Okano, Y., see Pan 129 (1993) 365
798 Author index
Okomelchenko, I.A., see Kiselev 129 (1993) 163 Rosenberger, F., see Monaco 129 (1993) 465
Onuma, K., K. Tsukamoto and S. Nakadate, Rouzaud, A., J. Coméra, P. Contamin, B.
Application of real time phase shift inter- Angelier, F. Herbillon and J.J. Favier,
ferometer to the measurement of con- Interest of the thermoelectric measure-
centration field 129 (1993) 706 ments for crystal growth 129 (1993) 173
Owczarek, I., see Sangwal 129 (1993) 640 Rulmont, A., see Cloots 129 (1993) 394
Saini, D.R., see Radhakrishnan 129 (1993) 191
Pain, G.N., see Gao 129 (1993) 134 Saito, T., see Oda 129 (1993) 30
Palosz, W. and H. Wiedemeier, Physical va- Saito, Y., see Kaito 129 (1993) 367
por transport of cadmium telluride in
Sangwal, K. and I. Owczarek, On the forma-
closed ampoules 129 (1993) 653
tion of etch grooves at impurity striations
Pan, Shoukui, Y. Okano, S. Tsunekawa and
and growth sector boundaries in crystals
T. Fukuda, Kyropoulos method for grown from solutions 129 (1993) 640
growth of nonlinear optical organic crys- Sasaki, A., see Wang 129 (1993) 289
tal ABP (4-aminobenzophenone) from
Sasaki, T., Surface morphology of MOVPE-
the melt 129 (1993) 365 grown GaN on (0001) sapphire 129 (1993) 81
Pan, Z.X., see Xu 129 (1993) 666 Saska, M., G. Sgualdino, G. Vaccari, G.
Paskova, T., see Yakimova 129 (1993) 143
Mantovani and L. Zefiro, Faceting of
Patel, P.D., see Agarwal 129 (1993) 559
spherical and cylindrical monocrystals of
Patriarche, G., R. Triboulet, Y. Marfaing sucrose 129 (1993) 91
and J. Castaing, Imperfections in II-VI Sato, M., see Oda 129 (1993) 30
semiconductor layers epitaxially grown by Saunders, B.V., see Murray 129 (1993) 70
organometallic chemical vapour deposi- Scheel, H.J., see Klemenz 129 (19934)2 1
tion on GaAs 129 (1993) 375 Schmid, H., see Kubel 129 (19935)1 5
Patterson, I.L.J., see Yates 129 (1993) 215 Scholl, S., see Waag 129 (19932)4 3
Pellerin, N., P. Odier and M. Gervais, Tex- Seilenthal, M., see Zimmermann 129 (19935)8 2
turation of YBaCuO by laser zone melt- Sgualdino, G., see Saska 129 (1993) 91
ing 129 (1993) 21
Shang, S.X., H. Wang and X.L. Sheng,
Pogorelskii, Yu.V., see Karpov 129 (1993) 563
Growth mechanism and crystal habit of
Polonsky, I.A., see Romanov 129 (1993) 691 RBa,Cu,0,_, (R= Y, Tm, Gd) single
Post, E. and V. Kramer, Crystal growth of crystals 129 (1993) 411
AgGaS, by the Bridgman—Stockbarger Sheng, X.L., see Shang 129 (1993) 411
and travelling heater methods 129 (1993) 485
Sherwin, M.E., G.O. Munns, M.E. Elta, E.G.
Pourroy, G., see Brés 129 (1993) 149
Woelk, S.B. Crary, F.L. Terry and G.I.
Protzmann, H., see Zimmermann 129 (1993) 37 Haddad, The optimization of In,Ga,_,
As and InP growth conditions by CBE
Radhakrishnan, S. and D.R. Saini, Polymer- (E) 129 (1993) 794
induced crystallization of inorganic salts. Shi Rihua, see Wang 129 (1993) 774
II. PEO-CaCl,, PEO-K,CO, and Shih, I., see Yip 129 (1993) 102
PEO-CaCO, 129 (1993) 191 Shih, I., see Shukri 129 (1993) 107
Richter, H., see Kiihne 129 (1993) 321 Shukri, Z.A., C.H. Champness and I. Shih,
Richter, W., see Zimmermann 129 (1993) 37 Boron nitride powder coating of ampoule
Ristorcelli, J.R. and J.L. Lumley, A second- for Bridgman-grown CulnSe, 129 (1993) 107
order turbulence simulation of the Shumov, D.P., M.P. Tarassov and V.S.
Czochralski crystal growth melt: the Nikolov, Investigation of optical inhomo-
buoyantly driven flow 129 (1993) 249 geneities in KTiOPO, (KTP) single crys-
Rodriguez-Clemente, R., see Aspar 129 (1993) 56 tals grown from high-temperature tung-
Roentgen, P., see Catana 129 (1993) 779 sten-containing solutions 129 (1993) 635
Romanov, A.E., ILA. Polonsky, V.G. Skrtié, D. and H. Fiiredi-Milhofer, Influence
Gryaznov, S.A. Nepijko, T. Junghanns of some aminoacids on the spontaneous
and N.I. Vitrykhovski, Voids and chan- precipitation of calcium oxalate from high
nels in pentagonal crystals 129 (1993) 691 ionic strength solutions 129 (19934)4 9
Rosenberger, F., S.B. Howard, J.W. Sowers Sowers, J.W., see Rosenberger 129 (1993) 1
and T.A. Nyce, Temperature depen- Stekolnikov, A.V., see Cherepanova 129 (19932)0 2
dence of protein solubility — determina- Stevenson, A.W., see Gao 129 (19931)3 4
tion and application to crystallization in Stolz, W., see Zimmermann 129 (1993) 37
X-ray capillaries 129 (1993) 1 Suga, K., see Nakamura 129 (19934)5 6
Author index 799
Takagashi, S., H. Yao and H. Mori, Origin Wakahara, A., see Wang 129 (1993) 289
and formation mechanism of elliptic- Wang, H., see Shang 129 (1993) 411
shaped surface defect on GaAs layers Wang Qimin, Chen Qinggui, Shi Rihua, Zhu
grown by molecular beam epitaxy 129 (1993) 443 Weibing, Dong Qiwei and Dong Rong-
Tanaka, U., T. Komori, N. Ishizawa, F. kang, Single-crystalline diamond film
Marumo and Y. Noda, Growth of NiS, growth 129 (1993) 774
single crystals by sublimation under con- Wang, X.H., W. Zhu, J. von Windheim and
trolled sulfur pressure 129 (1993) 683 J.T. Glass, Combustion growth of large
Tang, X., see Hageman 129 (1993) 281 diamond crystals 129 (1993) 45
Tarassov, M.P., see Shumov 129 (1993) 635 Wang, X.L., A. Wakahara and A. Sasaki,
Tatsuoka, H., H. Kuwabara, Y. Nakanishi OMVPE growth and characterization of
and H. Fujiyasu, CdTe (111) growth on Al,Ga,_,P (0<x <1) using tertiary-
misoriented Si (100) substrates by hot- butylphosphine 129 (19932)8 9
wall epitaxy 129 (1993) 686 Wanklyn, B.M., see Changkang 129 (19932)3 9
Terry, F.L., see Sherwin 129 (1993) 794 Watanabe, T., see Kaito 129 (19933)6 7
Tiller, W.A., see Yen 129 (1993) 224 Werkmann, J., see Brés 129 (19931)4 9
Tiller, W.A. and S. Uda, Intrinsic LiNbO, Wheeler, A.A., see Murray 129 (1993) 70
melt species partitioning at the congru- Weidemeier, H., see Palosz 129 (19936)5 3
ent melt composition. I. Static interface Wilkins, S.W., see Gao 129 (19931)3 4
case 129 (1993) 328 Williams, G.M., see Mackey 129 (19932)6 9
Tiller, W.A. and S. Uda, Intrinsic LiNbO, Williams, J.O., see Yates 129 (19932)1 5
melt species partitioning at the congru- Windheim, J. von, see Wang 129 (1993) 45
ent melt composition. I. Dynamic inter- Woelk, E.G., see Sherwin 129 (19937)9 4
face case 129 (1993) 341 Woodall, J.M., see Matyi 129 (19937)1 9
Triboulet, R., see Patriarche 129 (1993) 375
Tsukamoto, K., see Onuma 129 (1993) 706
Xiao, Q. and J.J. Derby, Bulk-flow versus
Tsunekawa, S., see Pan 129 (1993) 365
thermal-capillary models for Czochralski
Tulke, A. and H. Offermann, Measurement growth of semiconductors 129 (1993) 593
and discussion of potash alum crystal Xie, Si-Shen, see Chang 129 (1993) 362
growth rate fluctuations and dispersion 129 (1993) 13
Xu, J.J. and Z.X. Pan, Interfacial wave the-
ory of dendritic growth from a binary
Uchida, T., N. Yokouchi, T. Miyamoto, F. mixture: a comparison with experiments 129 (1993) 666
Koyama and K. Iga, Some optical charac- Xu, Zhengyi, Peiwen Ge, Chongru Huo and
teristics of beryllium-doped InP grown by Zhenhe Zhu, Analyses of the characteris-
chemical beam epitaxy (CBE) 129 (1993) 275 tics of crystal growth from solution under
Uda, S., see Tiller 129 (1993) 328 microgravity. III. Effects of the orienta-
Uda, S., see Tiller 129 (1993) 341 tion of microgravity 129 (1993) 506
Vaccari, G., see Saska 129 (1993) 91 Yakimova, R., T. Paskova and I. Ivanov,
Van Tendeloo, G., see Cloots 129 (1993) 394 Layer quality of Sb-doped GaAs grown
Velichko, A.A., see Kiselev 129 (1993) 163 by metalorganic vapor phase epitaxy 129 (1993) 143
Vilenkin, A.J. and A. Brokman, Geometric Yao, H., see Takagishi 129 (1993) 443
model of crystal growth between rigid Yates, H.M., J.O. Williams, I.L.J. Patterson
walls. II. Anisotropic interface controlled and D.J. Cole-Hamilton, Preparation and
normal and abnormal growth 129 (1993) 67 purification of dimethylzinc and the ef-
Vitrykhovski, N.I., see Romanov 129 (1993) 691 fect of iodine doping on the opto-elec-
Von Schierstedt, K., see Waag 129 (1993) 243 tronic properties of epitaxial ZnSe layers
grown by metalorganic chemical vapour
Waag, A., S. Scholl, K. von Schierstedt, D. deposition 129 (1993) 215
Hommel, G. Landwehr and G. Bilger, Yen, C.T. and W.A. Tiller, Incorporating
Bromine doping of CdTE and CdMnTe convection into one-dimensional solute
epitaxial layers grown by molecular beam redistribution during crystal growth from
epitaxy 129 (1993) 243 the melt. II. The initial transient solution 129 (1993) 224
Wada, H. and K. Moriya, Observation of Yip, L.S., I. Shih and C.H. Champness,
defects in semiconductor-on-insulator Method of avoiding ampoule adhesion of
(SOI) wafers by a nondestructive bulk ingots in Bridgman growth of CulnSe, 129 (1993) 102
micro-defect analyzer 129 (1993) 405 Yokouchi, N., see Uchida 129 (1993) 275
800 Author index
Yongle, Hu, see Changkang 129 (1993) 239 Zhu Weibing, see Wang 129 (1993) 774
Yu, Yu-De, see Chang 129 (1993) 362 Zhu, Zhenhe, see Xu 129 (1993) 506
Zimmermann, G., H. Protzmann, T.
Zaumseil, P., Characterization of the perfec- Marschner, O. Zsebok, W. Stolz, E.O.
tion of Si,_,Ga, layers on silicon by Gobel, P. Gimmnich, J. Lorberth, T. Filz,
X-ray methods 129 (1993) 537 P. Kurpas and W. Richter, Amino-arsine
Zefiro, L., see Saska 129 (1993) 91 and -phosphine compounds for the
Zhokhov, A.A. and G.A. Emel’chenko, MOVPE of III—V semiconductors 129 (1993) 37
Growth of YBa,Cu,0,_; single crystals Zimmermann, H., U. Godsele, M. Seilenthal
on seeds by a modified top seeded solu- and P. Eichinger, Vacancy concentration
tion growth (TSSG) technique 129 (1993) 786 wafer mapping in silicon 129 (1993) 582
Zhou, Tang, see Chang 129 (1993) 362 Zinck, J.J., see Liu 129 (1993) 111
Zhu, W., see Wang 129 (1993) 45 Zsebok, O., see Zimmermann 129 (1993) 37
Journal of Crystal Growth 129 (1993) 801-804 junnor CRYSTAL
North-Holland GROWTH
Subject index
Alloys — by electron microscopy 21, 45, 56, 81, 134, 143, 149, 163,
— of III-V compounds 728 367, 375, 394, 405, 411, 443, 543, 610, 621, 635, 691, 699,
— of II-VI compounds 728 779
Aluminum — by electron probe microanalysis 635
— gallium arsenide 37, 281, 532 — by helium diffraction 416
— gallium phosphide 289 — by interferometry 491
— nitride 56, 610, 621 — by mass spectrometry 371
4-Aminobenzophenone 365 — by neutron 266
Apparatus — by optical microscopy 37, 45, 91, 191, 269, 281, 289, 362,
— for solution growth 365, 371, 394, 405, 421, 443, 449, 456, 465, 491, 515, 549,
— — by temperature control 571, 635, 640, 699, 774, 777, 783
-— — - of protein 1 — by optical properties 275
— for thin film growth — by photoluminescence 215, 269, 275
— — by liquid phase electroepitaxy — by Raman spectroscopy 45, 143
— — — of semiconductors 429 — by reflection high energy electron diffraction 686
— — by liquid phase epitaxy — by secondary ion mass spectrometry 233, 375
— — - of high T, superconductors 421 — by Talystep surface profiling 421
— for miscellaneous purposes — by thermoelectric measurement 173
— — interferometry 706 — by thermogravimetric analysis 239, 449
— — solubility determination 1 — by transmission spectroscopy 362, 371, 375
— by X-ray methods 37, 56, 134, 191, 266, 365, 375, 394, 449,
485, 532, 537, 543, 559, 610, 635, 686, 719
Barium
— borate 371 Cobalt . .
. — aluminum oxide 699
Bismuth
— oxide / zirconium oxide 699
— iron oxide 515
Computer simulation
— of melt growth
Cadmium — — by Bridgman-—Stockbarger method 30, 70
— manganese telluride 243 — — by Czochralski method 249
— mercury telluride 375 — of solution growth under microgravity 506
— telluride 111, 243, 375, 653, 686, 691 — of tin—copper eutectic growth 549
Calcite 789 Convection 70, 224, 249, 506, 549, 706
Calcium Copper
— carbonate 191, 789 — indium selenide 102, 107
— fluoride 163 — oxide 239
— oxalate 449
— phosphate 149
Canavalin 1 Dendritic growth
Characterization methods — theory of 666
— by atomic absorption spectroscopy 233 Device characterization
— by atomic force microscopy 789 — quantum wells 532
— by Auger electron spectroscopy 621 — separation by implanted oxygen 405
— by cathodoluminescence 269 Diamond 45, 774
— by chemical analysis 549 Diffusion control
— by differential thermal analysis 485 — in microgravity solution growth 506
— by electrical methods 37, 215, 243, 281, 289, 525, 559, 582, — of calcium carbonate 191
786 Dissolution 465
— by electron diffraction 21, 774 Domains 515
802 Subject index
Epitaxy, see Thin film growth — — theory of 179, 249
Etching — by floating zone method
— chemical 443, 456, 515, 640, 777 — — of cobalt aluminum oxide 699
— chemical, theory of 640 — — of cobalt oxide / zirconium oxide 699
— thermal 465 — — of molybdenum silicide 266
Eutectic growth — — of tungsten silicide 266
— of cobalt oxide / aluminum oxide / zirconium oxide 699 — — of yttrium barium cuprate 21
— of cobalt oxide / zirconium oxide 699 — — theory of 385, 593
— of tin copper 549 — by Kyropoulos method
— — of 4-aminobenzophenone 365
Gadolinium — by traveling heater method
— barium cuprate 411 — — of silver gallium disulphide 485
Gallium — theory of 173, 224, 328, 341
— aluminum arsenide 37 Mercury
— arsenide 37, 134, 143, 281, 443, 719, 777 — cadmium telluride 233
— indium arsenide 779 Microgravity, growth under
— indium arsenide phosphide 456, 779 — in solution 506
— indium phosphide 456, 779, 783 — theory of 70
— nitride 81 Molybdenum
— phosphide 289 — selenide 559
Germanium 525 — silicide 266
— gallium 525 Morphological stability
— of diamond 45
Heat flow control 119 — of ice 571
Hydrodynamics, see Convection — of sucrose 91
Ice 491, 571 Neodymium
Impurity — barium cuprate 421
— theory of 202 Nickel
Indium — sulphide 683
— gallium phosphide 783 Nucleation
— phosphide 37, 275, 456, 779 — of calcium carbonate 191
— selenide 312 — of diamond 45
Interface Numbers
— theory of 202 — Grashof 30, 593
— Rayleigh 70
Kinetics — Stanton 111
— of evaporation 571
— of growth 13, 91, 385, 416, 465, 789 Palladium 416
— of interface control 67 Phase diagrams
— of nucleation 416 — of copper oxide / barium oxide 239
— of poisoning 789 — of lithium oxide / niobium oxide 328
— of surface growth 610 — of neodymium barium cuprate 421
— of silver gallium disulphide /lead chloride 485
Lanthanum — of silver gallium disulphide / silver bromide 485
— aluminate 362 — of III-V compounds 563
Lithium — of yttrium barium cuprate 421
— niobate 328, 341 Potash
Lysozyme 1, 465 — alum 13
Potassium
Melt growth technique — phosphate 640
— by Bridgman-—Stockbarger method — titanyl phosphate 635
— — of copper indium selenide 102, 107 Precursor
— — of silver gallium disulphide 485 — for III-V alloys 728
— of tin copper 549 — for II-VI alloys 728
— — theory of 30, 70 Proteins 1
— by Czochralski method
— of silicon 179 Quantum wells, see Device characterization
Subject index 803
Silicon 179, 405, 582, 691 — — of yttrium barium cuprate 421
— germanium 321, 537 — by molecular beam epitaxy
Silver — — of aluminum gallium arsenide 532
— gallium disulphide 485 — — of cadmium manganese telluride 243
Sodium — — of cadmium telluride 243
— chlorate 706 — - of calcium fluoride 163
Solid growth technique — — of gallium arsenide 443, 719
— of yttrium barium cuprate 394 — — of indium selenide 312
Solution growth technique — — theory of 563
— by flux method — by vapor phase epitaxy
— — of barium borate 371 — through chemical vapor deposition
— — of bismuth iron oxide 515 — — — of aluminum nitride 56
— — of copper oxide 239 — — — of cadmium telluride 111
— of gadolinium barium cuprate 411 — — — of diamond 774
— — of potassium titanyl phosphate 635 — — — of germanium 525
— — of thulium barium cuprate 411 — — - of germanium gallium 525
— of vanadium boride 543 — of silicon germanium 321
— of yttrium barium cuprate 411, 786 — — — theory of 111, 119
— by gel method through evaporation and condensation
— — of calcium carbonate 191 — of ice 491
— by low temperature method — — through metalorganic chemical vapor deposition
— — by lysozyme 465 — — — of aluminum gallium arsenide 281
— — of potash alum 13 — — — of aluminum gallium phosphide 289
— — of potassium phosphate 640 — of aluminum nitride 610, 621
— — of sodium chlorate 706 — — — of cadmium mercury telluride 375
— — of sucrose 91 — — - of cadmium telluride 375
— theory of 385, 506 of gallium aluminum arsenide 37
Stefan problem or moving boundary problem 593 of gallium arsenide 37, 134, 143, 281
Step 571, 789 of gallium indium arsenide 779
Strain 134, 686 of gallium indium arsenide phosphide 779
Sucrose 91 — — — of gallium indium phosphide 456, 783
Superconductivity materials, high 7, — — — of gallium nitride 81
— bulk of indium phosphide 37, 456, 779
— - of YBCO 21 of III—V alloys 728
— film of II-VI alloys 728
— of YBCO 394, 411, 421, 786 of zinc selenide 215
— - of NdBCO 421 of zinc selenide telluride 629
Surface structure of zinc sulphide selenide 629
— of calcium carbonate 789 of zinc sulphide telluride 629
— of ice 491, 571 of zinc telluride 629
— theory of 202 — — — theory of 629
Thulium
Thermodynamics
— barium cuprate 411
— of indium-selenium system, 297, 312
Tin
Thin film growth, epitaxy
— copper 549
— by atomic layer molecular beam epitaxy
— sulphide 367
— — of palladium 416
Tungsten
— by chemical beam epitaxy
— silicide 266
— — of indium phosphide 275
— by flame
— — of diamond 45
— by hot wall epitaxy Vanadium
— — of cadmium telluride 686 — boride 543
— by liquid phase electroepitaxy Vapor growth technique
— — of semiconductors 429 — by chemical transport
— by liquid phase epitaxy — - of molybdenum selenide 559
— — of mercury cadmium telluride 233 — by evaporation and condensation
— — of neodymium barium cuprate 421 — -— of cadmium telluride 653, 691
804 Subject index
— — of nickel sulphide 683 Yttrium
— — of silicon 691 — barium cuprate 21, 394, 411, 421, 786
Vapor-liquid-solid growth — barium sulphur oxide 394
— of tin sulphide 367 — orthoaluminate 269
Vapor-solid growth
Zinc
— of yttrium barium sulphur oxide 394
— selenide 215
— selenide telluride 629
Whisker growth
— sulphide selenide 629
— of cadmium telluride 691
— sulphide telluride 629
— of silicon 691
— telluride 375, 629