Journal of Crystal Growth 1992: Vol 120 Index

9 Pages·1992·1.6 MB·English

Journal of Crystal Growth 120 (1992) 399-404 journos CRYSTAL
North-Holland GROWTH
Author index
Abernathy, C.R. and D.A Bohling, Low Ball, G , see Lane 120 (1992) 245
temperature growth of AlGaAs by Ballingall, J., see Hersee 120 (19922)1 8
MOMBE (CBE) using trimethylamine Ban, V.S., see Jones 120 (19921)5 0
alane 120 (1992) 195 Barrau, J., see Starck 120 (1992) 180
Abernathy, C.R., F. Ren, S.J. Pearton, T.R Baur, B., see Heinecke 120 (1992) 140
Fullowan, R.K. Montgomery, P.W. Wisk, Baur, B., see Beer 120 (19923)1 2
J.R. Lothian, P.R. Smith and R.N. Not Baur, B., see Heinecke 120 (1992) 376
tenburg, Growth of GaAs/ AlGaAs Beer, K., B. Baur, H. Heinecke and R
HBTs by MOMBE (CBE) 120 (1992) 234 Treichler, Improvements in silicon dop-
Aketagawa, K., see Tatsumi 120 (1992) 275 ing of InP and GalnAs in metalorganic
Alexandre, F., see Benchimol 120 (1992) 189 molecular beam epitaxy 120 (19923)1 2
Allenson, M.B., see Lane 120 (1992) 245 Benchimol, J.L., X.Q. Zhang, Y. Gao, G. Le
Amin, S.J., see Skevington 120 (19921)3 5 Roux, H. Thibierge and F. Alexandre,
Amin, S.J., see Skevington 120 (1992) 328 Chemical beam epitaxy of AlGaAs and
Ando, H., T. Fujii, A.S andhu, T. Takahashi, AllnAs using trimethylamine alane pre-
H. Ishikawa, N. Okamoto and N cursor 120 (19921)8 9
Yokoyama, Growth of carbon-doped base Bensaoula, A., see Roth 120 (19922)1 2
GaAs / AlGaAs HBT by gas-source MBE Bhat, R.., see Aspnes 120 (1992) 71
using TEG, TEA, TMG, AsH,, and Bhat, R., Current status of selective area
Si,H, 120 (1992) 228 epitaxy by OMCVD 120 (19923)6 2
Ando, H., see Sandhu 120 (1992)29 6 Bhattacharya, P.K., see Sherwin 120 (1992) 162
Antolini, A., see Genova 120 (1992) 333 Bohling, D.A., see Abernathy 120 (1992) 195
Armstrong, J.V., T. Farrell, T.B. Joyce, P Bonnevie, D., see Goldstein 120 (1992) 157
Kightley, TJ. Bullough and PJ. Good- Boulou, M., see Starck 120 (19923)4 9
hew, Monitoring real-time CBE growth Bradley, R.R., see Woodhouse 120 (19923)2 3
of GaAs and AlGaAs using dynamic op- Brillouet, F., see Pagnod-Rossiaux 120 (19923)1 7
tical reflectivity 120 (1992) 84 Brock, T., see Munns 120 (1992) 184
Armstrong, J.V., see Farrell 120 (1992) 395 Bullough, T_J., see Armstrong 120 (1992) 84
Armstrong, S.R., R.D. Hoare, M.E. Pemble, Bullough, T.J., see Joyce 120 (19922)0 6
1.M. Povey, A. Stafford and A.G. Taylor, Bullough, T.J., see Farrell 120 (1992) 395
Optical second harmonic generation
studies of the nature of the GaAs(100) Caneau, C., see Aspnes 120 (1992) 71
surface in air 120 (1992) 94 Carlin, J.F., A. Rudra, R. Houdré, P. Rute-
Asahi, H., see Kaneko 120 (1992) 39 rana and M. Ilegems, Effect of growth
Asahi, H., T. Kaneko, Y. Okuno, Y. Itani, K interruptions on ultra-thin InAs/InP
Asami and S. Gonda, MOMBE growth quantum wells grown by chemical beam
characteristics of antimonide compounds 120 (1992) 252 epitaxy 120 (1992) 155
Asami, K., see Asahi 120 (1992)25 2 Carlin, J.F., see Rudra 120 (19923)3 8
Asonen, H., see Tappura 120 (1992) 145 Chin, A., see Hersee 120 (1992) 218
Asonen, H., see Zhang 120 (1992) 172 Chiu, T.H., see Cunningham 120 (1992) 306
Aspnes, D.E., R. Bhat, C. Caneau, E. Colas, Chiu, T.H., M.D. Williams, J.E. Zucker, F.G
L.T. Florez, S. Gregory, J.P. Harbison, | Storz and $.N.G. Chu, CBE growth of
Kamiya, V.G. Keramidas, M.A. Koza, InGaAsP/InP multiple quantum wells
M.A.A. Pudensi, W.E. Quinn, S.A for optical modulator applications 120 (19923)4 3
Schwarz, M.C. Tamargo and H. Tanaka, Choi, K.Y., see Edwards 120 (1992) 78
Optically monitoring and controlling epi- Choi, K.Y., see Droopad 120 (1992) 200
taxial growth 120 (1992) 71 Christer, J., see Stagg 120 (1992) 98
400 Author index
Chu, S.N.G., see Chiu 120 (1992) 343 techniques in the study of reaction mech-
Clérot, F., see Le Corre 120 (1992) 353 anisms in CBE; investigations of the re-
Colas, E., see Aspnes 120 (1992) 71 activity of tritertiarybutylgallium and tri-
Crawley, J., see Stagg 120 (1992) 98 isobutylgallium as alternative precursors
Cremer, C., see Heinecke 120 (1992) 376 for epilayer growth 120 (1992) 103
Crouch, M.A., see Lane 120 (1992) 245 Foord, J.S., see Davies 120 (19923)6 9
Cullis, A.G., see Lane 120 (1992) 245 Foxon, C.T., see Lacklison 120 (1992) 50
Cunningham, J.E., M. Williams, T.H. Chiu, Francesio, L., see Genova 120 (1992) 333
W. Jan, F. Storz and E. Westerwick, French, C.L., see FitzGerald 120 (1992) 57
Confinement of 5 Be at the one mono- French, C.L., and J.S. Foord, Reaction ki-
layer level in GaAs 120 (19923)0 6 netics for the CBE growth of GaAs from
triethylgallium; computer modelling stud-
Davies, G.J., see Singh 120 (1992) 33
ies incorporating recent surface spectro-
Davies, G.J., see Foord 120 (1992) 103
scopic data 120 (1992) 63
Davies, G.J., see Skevington 120 (1992) 328
French, C.L., see Davies 120 (1992) 369
Davies, G.J., PJ. Skevington, C.L. French
Fujii, T., see Ando 120 (1992)22 8
and J.S. Foord, Selective area growth of
Fujii, T., see Sandhu 120 (19922)9 6
III-V compound semiconductors by
Fullowan, T.R., see Abernathy 120 (1992) 234
chemical beam epitaxy 120 (1992) 369
Dawsey, J.R., see Lane 120 (1992) 245 Gaborit, F., see Goldstein 120 (1992) 157
Deppert, K., S. Jeppesen, J. Jonsson, G. Gaborit, F., see Pagnod-Rossiaux 120 (1992) 317
Paulsson and L. Samuelson, Effects of Gailhanou, M., see Rudra 120 (1992) 338
pressure and temperature on RD de- Gao, Y., see Benchimol 120 (1992) 189
tected growth oscillations 120 (1992) 88 Garabedian, P., see Pagnod-Rossiaux 120 (1992) 317
Domen, K., see Sandhu 120 (1992) 296 Gastaldi, L., see Genova 120 (1992) 333
Droopad, R., see Edwards 120 (1992) 78 Gates, S.M., Kinetics and mechanisms of
Droopad, R., K.T. Shiralagi, R.A. Puechner, surface reactions in epitaxial growth of Si
K.Y. Choi and G.N. Maracas, Low tem- from SiH, and Si,H, 120 (19922)6 9
perature GaAs grown by gas source Genova, F., A. Antolini, L. Francesio, L
molecular beam epitaxy 120 (1992) 200 Gastaldi, C. Lamberti, C. Papuzza and C.
Durel, S., see Le Corre 120 (1992) 353 Rigo, Influence of growth parameters on
Edwards, J.L.,G.N. Maracas, K.T. Shiralagi, the interface abruptness in CBE-grown
K.Y. Choi and R. Droopad, In-situ and InGaAs /InP QWs and SLs 120 (19923)3 3
ex-situ characterization of GaAs/AIAs Gibson, E.M., see Lacklison 120 (1992) 50
quantum well structures using spec- Gill, $.S., see Lane 120 (1992) 245
troscopy ellipsometry 120 (1992) 78 Goldstein, L., C. Starck, J.-Y. Emery, F
Emeis, N., see Heinecke 120 (1992) 140 Gaborit, D. Bonnevie, F. Poingt and M
Emery, J.-Y., see Goldstein 120 (1992) 157 Lambert, Optoelectronic devices by gas
Emery, J.-Y., see Starck 120 (1992) 180 source molecular beam epitaxy 120 (19921)5 7
Goldstein, L., see Starck 120 (19921)8 0
Farrell, T., see Armstrong 120 (1992) 84 Gonda, S., see Kaneko 120 (1992) 39
Farrell, T., J.V. Armstrong, T.B. Joyce, TJ. Gonda, S., see Asahi 120 (1992)25 2
Bullough, P. Kightley and PJ. Goodhew, Goodhew, P.J., see Armstrong 120 (1992) 84
XeCl excimer laser assisted CBE growth Goodhew, P.J., see Joyce 120 (19922)0 6
of GaAs 120 (1992) 395 Goodhew, P_J., see Farrell 120 (19923)9 5
FitzGerald, E.T., C.L. French and JS. Goto, S., see Isu 120 (1992) 45
Foord, Surface chemical studies of the Goto, S., Y. Morishita, Y. Nomura, Y.
influence of In and Al on the decomposi- Katayama and T. Isu, Hillock formation
tion of TEG on GaAS(100) 120 (1992) 57 observed in MOMBE of InGaAs grown
FitzGerald, E.T., see Foord 120 (1992) 103 on a patterned GaAs substrate 120 (19923)8 2
Flemish, J.R., see Jones 120 (19921)5 0 Gregory, S., see Aspnes 120 (1992) 71
Florez, L.T., see Aspnes 120 (1992) 71
Foord, J.S., see Singh 120 (1992) 33 Haddad, G.1., see Munns 120 (1992) 184
Foord, J.S., see FitzGerald 120 (1992) 57 Hakkarainen, T., see Tappura 120 (1992) 145
Foord, J.S., see French 120 (1992) 63 Hakkarainen, T., see Zhang 120 (19921)7 2
Foord, J.S., N.K. Singh, E.T. FitzGerald, Halliwell, M.A.G., see Skevington 120 (19923)2 8
G.J. Davies and A.C. Jones, Applications Harbison, J.P., see Aspnes 120 (1992) 71
of MBMS and surface spectroscopic Hata, M., see Isu 120 (1992) 45
Author index
Heinecke, H., B. Baur, N. Emeis and M growth of GaAs/GaAs, GaAs/Si and
Schier, Growth of highly uniform InP / AlGaAs/GaAs using TEG, AsH, and
GalnAs/ GalnAsP heterostructures by amine-alane precursors 120 (1992) 206
MOMBE for device integration 120 (1992) 140 Joyce, T.B., see Farrell 120 (1992)39 5
Heinecke, H., see Beer 120 (1992) 312
Heinecke, H., B. Baur, R. Schimpe, R. Matz, Kamiya, I., see Aspnes 120 (1992) 71
C. Cremer, R. Héger and A. Miklis, Se- Kamp, M., F. Konig, G. Mérsch and H
lective area epitaxy of InP /GalnAsP Liith, New aluminium precursors for
heterostructures by MOMBE 120 (1992) 376 MOMBE (CBE): a comparative study 120 (19921)2 4
Hersee, S.D., L. Yang, M. Kao, P. Martin, J Kaneko, T., H. Asahi and S. Gonda, Theo-
Mazurowski, A. Chin and J. Ballingall, retical consideration of the growth kinet-
MOMBE GaAs and AlGaAs for micro- ics for GaAs and GaSb 120 (1992) 39
electronic devices 120 (19922)1 8 Kaneko, T., see Asahi 120 (1992)25 2
Hincelin, G., M. Zahzouh, R. Mellet and Kao, M., see Hersee 120 (19922)1 8
A.M. Pougnet, Growth of InP in chemi- Katayama, Y., see Isu 120 (1992) 45
cal beam epitaxy with high purity ter- Katayama, Y., see Goto 120 (19923)8 2
tiarybutylphosphine 120 (1992) 119 Keramidas, V.G., see Aspnes 120 (1992) 71
Hiroi, M., see Tatsumi 120 (1992) 275 Kiely, C.J., see Joyce 120 (19922)0 6
Hiroi, M. and T. Tatsumi, Selective epitaxial Kightley, P., see Armstrong 120 (1992) 84
growth of Si,_,.Ge, by cold-wall ultra- Kightley, P., see Joyce 120 (19922)0 6
high vacuum chemical vapor deposition Kightley, P., see Farrell 120 (19923)9 5
using disilane and germane 120 (1992) 279 Koide, Y., S. Zaima, K. Itoh and Y. Yasuda,
Hoare, R.D., see Armstrong 120 (1992) 94 In-situ RHEED study on the effect of
Hoéger, R., see Heinecke 120 (1992) 376 light irradiation on Ge /Si heteroepitax-
Hou, H.Q. and C.W. Tu, InGaAsP /InP ial growth by GeH, source MBE 120 (1992) 284
multiple quantum wells grown by gas- Konagai, M., Wide band-gap II-VI com-
source molecular beam epitaxy 120 (1992) 167 pounds grown by MOMBE 120 (1992)26 1
Houdré, R., see Carlin 120 (1992) 155 Konagai, M., see Tokumitsu 120 (19923)0 1
Houlton, M., see Lane 120 (19922)4 5 Konig, F., see Kamp 120 (19921)2 4
Hughes, B.T., see Lane 120 (1992) 245 Koyama, F., see Uchida 120 (19923)5 7
Koza, M.A., see Aspnes 120 (1992) 71
Iga, K., see Uchida 120 (1992) 357 Kwon, Y., see Munns 120 (1992) 184
Iga, R., see Yamada 120 (1992) 177
Iga, R., see Sugiura 120 (1992) 389 Lacelle, C., see Roth 120 (19922)1 2
llegems, M., see Carlin 120 (1992) 155 Lacklison, D.E., C.T. Foxon, J. Zhang, B.A
llegems, M., see Rudra 120 (1992) 338 Joyce and E.M. Gibson, RHEED studies
Ishikawa, H., see Ando 120 (19922)2 8 of MOMBE growth using TMGa or
Isu, T., M. Hata, Y. Morishita, Y. Nomura, TEGa with As, 120 (1992) 50
S. Goto and Y. Katayama, Surface diffu- Lambert, B., see Le Corre 120 (19923)5 3
sion length during MOMBE and CBE Lambert, M., see Goldstein 120 (19921)5 7
growth measured by n.-RHEED 120 (1992) 45 Lambert, M., see Pagnod-Rossiaux 120 (19923)1 7
Isu, T., see Goto 120 (1992) 382 Lamberti, C., see Genova 120 (19923)3 3
Itani, Y., see Asahi 120 (1992) 252 Lane, P.A., see Martin 120 (1992) 25
Itoh, K., see Koide 120 (1992) 284 Lane, P.A., C.R. Whitehouse, T. Martin, M
Houlton, G.M. Williams, A.G. Cullis, S$.S
Jan, W., see Cunningham 120 (1992) 306 Gill, J.R. Dawsey, G. Ball, B.T. Hughes,
Jeppesen, S., see Deppert 120 (1992) 88 M.A. Crouch and M.B. Allenson, CBE
Jones, A.C., see Foord 120 (1992) 103 growth of GaAs/GaAlAs HBTs using
Jones, K.A., J.R. Flemish, H. Shen and V.S the new DEAIH-—NMe, precursor and
Ban, Incorporation of phosphorus during all-gaseous dopants 120 (19922)4 5
gas phase epitaxy 120 (1992) 150 Corre, A., S. Durel, F. Clérot, B. Lam-
Jénsson, J., see Deppert 120 (1992) 88 bert, A. Poudoulec, S. Salaiin and D
Joyce, B.A., see Lacklison 120 (1992) 50 Lecrosnier, Critical layer thickness of
Joyce, B.A., see Mokler 120 (19922)9 0 Ing g2>Gay ;gAs/InP quantum wells 120 (19923)5 3
Joyce, T.B., see Armstrong 120 (1992) 84 Le Gouezigou, L., see Pagnod-Rossiaux 120 (19923)1 7
Joyce, T.B., TJ. Bullough, P. Kightley, CJ Le Roux, G., see Benchimol 120 (1992) 189
Kiely, Y.R. Xing and PJ. Goodhew, CBE Lecrosnier, D., see Le Corre 120 (19923)5 3
402 Author index
Liu, W.K., see Mokler 120 (19922)9 0 Pagnod-Rossiaux, Ph., M. Lambert, F. Ga
Lothian, J.R., see Abernathy 120 (1992) 234 borit, F. Brillouet, P. Garabedian and |
Lith, H., see Kamp 120 (19921)2 4 Le Gouezigou, Growth of semi-insulating
Lyons, M.H., see Skevington 120 (19923)2 8 InP by GSMBE 120 (19923)1 7
Papuzza, C., see Genova 120 (1992) 333
Maigné, P., see Roth 120 (19922)1 2 Paulsson, G., see Deppert 120 (1992) 88
Mallecot, F., see Starck 120 (19923)4 9 Pavilidis, D., see Munns 120 (19921)8 4
Maracas, G.N., see Edwards 120 (1992) 78 Pearton, S.J., see Abernathy 120 (19922)3 4
Maracas, G.N., see Droopad 120 (19922)0 0 Pemble, M.E., see Armstrong 120 (1992) 94
Martin, P., see Hersee 120 (19922)1 8 Pessa, M., see Zhang 120 (19921)7 2
Martin, T., C.R. Whitehouse and P.A. Lane, Peyre, J.-L., see Starck 120 (19923)4 9
Growth reactions and mechanisms in Poingt, F., see Goldstein 120 (19921)5 7
chemical beam epitaxy (CBE) 120 (1992) 25 Poudoulec, A., see Le Corre 120 (19923)5 3
Martin, T., see Lane 120 (19922)4 5 Pougnet, A.M., see Hincelin 120 (19921)1 9
Matabon, M.., see Starck 120 (19921)8 0 Povey, I.M., see Armstrong 120 (1992) 94
Matz, R., see Heinecke 120 (19923)7 6 Pudensi, M.A.A., see Aspnes 120 (1992) 71
Mazurowski, J., see Hersee 120 (19922)1 8 Puechner, R.A., see Droopad 120 (19922)0 0
Mellet, R., see Hincelin 120 (1992) 119
Miklis, A., see Heinecke 120 (19923)7 6 Qi, M., see Tokumitsu 120 (1992) 301
Misawa, S., see Okumura 120 (19921)1 4 Quinn, W.E., see Aspnes 120 (1992) 71
Miyamoto, T., see Uchida 120 (1992) 357
Mokler, S.M., W.K. Liu, N. Ohtani and B.A. Rakennus, K., see Tappura 120 (19921)4 5
Joyce, RHEED studies of the growth of Rakennus, K., see Zhang 120 (19921)7 2
Si(001) by gas source MBE from disilane 120 (19922)9 0 Rejman-Greene, M.A.Z., see Skevington 120 (19923)2 8
Mollot, F., see Starck 120 (19923)4 9 Ren, F., see Abernathy 120 (19922)3 4
Montgomery, R.K., see Abernathy 120 (1992) 234 Rigo, C., see Genova 120 (1992) 333
Morishita, Y., see Isu 120 (1992) 45 Roth, A.P., D. Morris, Q. Sun, C. Lacelle, Z
Morishita, Y., see Goto 120 (19923)8 2 Wasilewski, P. Maigné and A. Bensaoula,
Morris, D., see Roth 120 (1992) 212 Anisotropy in InGaAs/GaAs hetero-
MoOrsch, G., see Kamp 120 (19921)2 4 structures grown by low-pressure
Miller, R., see Rothfritz 120 (19921)3 0 MOVPE and CBE 120 (19922)1 2
Miller, R., see Trankle 120 (1992) 240 Rothfritz, H., G. Trankle, R. Miller and G
Munns, G.O., see Sherwin 120 (1992) 162 Weimann, High-quality InP grown by
Munns, G.O., M.E. Sherwin, T. Brock, G.1. chemical beam epitaxy 120 (19921)3 0
Haddad, Y. Kwon, G.I. Ng and D. Pavi- Rothfritz, H., see Trankle 120 (19922)4 0
lidis, InAlAs/InGaAs/InP sub-micron Rudra, A., see Carlin 120 (19921)5 5
HEMTs grown by CBE 120 (19921)8 4 Rudra, A., J.F. Carlin, P. Ruterana, M. Gail-
hanou, J.L. Staehli and M. Ilegems,
Nakamura, T., see Sandhu 120 (19922)9 6 Growth of GalnAs(P) and GalnAsP
Newman, R.C., see Woodhouse 120 (1992) 323 GalnAs MQW structures by CBE 120 (19923)3 8
Ng, G.1., see Munns 120 (19921)8 4 Ruterana, P., see Carlin 120 (19921)5 5
Nichols, D.T., see Sherwin 120 (19921)6 2 Ruterana, P., see Rudra 120 (1992) 338
Nicklin, R., see Woodhouse 120 (1992) 323
Noguchi, Y., see Yamada 120 (1992) 177 Sakai, J., see Tatsumi 120 (1992) 275
Nomura, Y., see Isu 120 (1992) 45 Sakuma, E., see Okumura 120 (1992) 114
Nomura, Y., see Goto 120 (19923)8 2 Salaiin, S., see Le Corre 120 (19923)5 3
Nottenburg, R.N., see Abernathy 120 (1992) 234 Samuelson, L., see Deppert 120 (1992) 88
Nozaki, S., see Tokumitsu 120 (1992)3 0 Sandhu, A., see Ando 120 (1992) 228
Sandhu, A., T. Nakamura, H. Ando, K
Ohtani, N., see Mokler 120 (1992) 290 Domen, N. Okamoto and T. Fujii, The
Okamoto, N., see Ando 120 (19922)2 8 electrical, optical and crystalline proper-
Okamoto, N., see Sandhu 120 (1992) 296 ties of GaAs:C grown by GSMBE using
Okumura, H., S. Yoshida, S. Misawa and E. TMG and AsH, for application to HBTs 120 (19922)9 6
Sakuma, Epitaxial growth of GaAs and Sangster, M.J.L., see Woodhouse 120 (19923)2 3
GaN by gas source molecular beam epi- Schier, M., see Heinecke 120 (1992) 140
taxy using organic group V compounds 120 (1992) 114 Schimpe, R., see Heinecke 120 (1992)37 6
Okuno, Y., see Asahi 120 (1992) 252 Schwarz, S.A., see Aspnes 120 (1992) 71
Author index
Shen, H., see Jones 120 (1992) 150 Tappura, K., T. Hakkarainen, K. Rakennus
Sherwin, M.E., G.O. Munns, D.T. Nichols, and H. Asonen, Temperature depen-
P.K. Bhattacharya and F.L. Terry, Jr dency of the composition of GalnAsP
The growth of InGaAsP by CBE for SCH grown by GSMBE 120 (1992) 145
quantum well lasers operating at 1.55 Tappura, K., see Zhang 120 (1992) 172
and 1.4 um 120 (1992) 162 Tatsumi, T., K. Aketagawa, M. Hiroi and J
Sherwin, M.E., see Munns 120 (1992) 184 Sakai, Selective epitaxial growth by
Shirakashi, J., see Tokumitsu 120 (1992) 301 UHV-CVD using Si,H, and Cl, 120 (19922)7 5
Shiralagi, K.T., see Edwards 120 (1992) 78 Tatsumi, T., see Hiroi 120 (19922)7 9
Shiralagi, K.T., see Droopad 120 (19922)0 0 Taylor, A.G., see Armstrong 120 (1992) 94
Simes, R.J., see Starck 120 (1992) 180 Terry, Jr., F.L., see Sherwin 120 (1992) 162
Singh, N.K., J.S. Foord, PJ. Skevington and Thibierge, H., see Benchimol 120 (1992) 189
G.J. Davies, Growth and MBMS studies Thrush, E.J., see Stagg 120 (1992) 98
of reaction mechanisms for In ,Ga,_, As Tokumitsu, E., J. Shirakashi, M. Qi, T. Ya-
CBE 120 (1992) 33 mada, S. Nozaki, M. Konagai and K
Singh, N.K., see Foord 120 (1992) 103 Takahashi, Heavily carbon-doped p-type
Skevington, P.J., see Singh 120 (1992) 33 InGaAs by MOMBE 120 (1992) 301
Skevington, P.J., and S.J. Amin, Control of Trankle, G., see Rothfritz 120 (1992) 130
growth temperature at the onset of Trankle, G., H. Rothfritz, R. Miller and G
Ing <;Ga_ 47As growth by chemical beam Weimann, CBE growth of high-quality
epitaxy 120 (1992) AlGaAs /GaAs heterostructures for
Skevington, P-.J., M.A.G Halliwell, M.H HEMT applications 120 (19922)4 0
Lyons, S.J Amin, M.A.Z. Rejman- Treichler, R., see Beer 120 (19923)1 2
Greene and G.J. Davies, Growth of InP Tsang, W.T., Advances in MOVPE, MBE,
InGaAs multiple quantum well structures and CBE 120(1992) 1
by chemical beam epitaxy 120 (1992) 328 Tu, C.W., see Hou 120 (19921)6 7
Skevington, P.J., see Davies 120 (1992) 369
Smith, P.R., see Abernathy 120 (19922)3 4 Uchida, T., T.K. Uchida, N. Yokouchi, T
Staehli, J.L., see Rudra 120 (1992) 338 Miyamoto, F. Koyama and K. Iga, Photo-
Stafford, A., see Armstrong 120 (1992) 94 luminescence characterization of Ga,
Stagg, J.P., J. Christer, EJ. Thrush and J In, _,As (0 <x: 0.32) strained quantum
Crawley, Measurement and control of wells grown on InP by chemical beam
reagent concentrations in MOCVD reac- epitaxy 120 (1992) 357
tor using ultrasonics 120 (1992) Uchida, T.K., see Uchida 120 (1992) 357
Starck, C., see Goldstein 120 (1992)
Starck, C., J.-Y. Emery, RJ. Simes, M Wasilewski, Z.., see Roth 120 (19922)1 2
Matabon, L. Goldstein and J. Barrau,
Weimann, G.., see Rothfritz 120 (19921)3 0
Strained quaternary GalnAsP quantum Weimann, G.., see Trankle 120 (1992) 240
well laser emitting at 1.5 um grown by Westerwick, E., see Cunningham 120 (19923)0 6
gas source molecular beam epitaxy 120 (19921)8 0 Whitehouse, C.R., see Martin 120 (1992) 25
Starck, C., F. Mollot, F. Mallecot, J.-L. Peyre Whitehouse, C.R., see Lane 120 (1992) 245
and M. Boulou, Well-size dependence of Williams, G.M., see Lane 120 (19922)4 5
electro-optic effects in GalnAsP/InP Williams, M.D., see Cunningham 120 (19923)0 6
quantum wells grown by GSMBE 120 (1992) Williams, M.D., see Chiu 120 (1992) 343
Storz, F.G.., see Cunningham 120 (1992) Wisk, P.W., see Abernathy 120 (1992) 234
Storz, F.G., see Chiu 120 (1992) Woodhouse, K., R.C. Newman, R. Nicklin,
Sugiura, H., see Yamada 120 (1992) R.R. Bradley and M.J.L. Sangster, The
Sugiura, H., R. Iga and T. Yamada, Laser lattice sites of carbon and hydrogen in-
assisted chemical beam epitaxy for selec corporated in GaAs grown by MOVPE
tive growth 120 (1992) revealed by infrared spectroscopy 120 (1992) 323
Sun, Q., see Roth 120 (1992)
Xing, Y.R., see Joyce 120 (19922)0 6
Takahashi, K., see Tokumitsu 120 (1992) 301 Yamada, T., R. Iga, Y. Noguchi and H
Takahashi, T , see Ando 120 (19922)2 8 Sugiura, CBE growth of low threshold
Tamargo, M.C., see Aspnes 120 (1992) 71 1.5 um InGaAs / InGaAsP MOW lasers 120 (1992) 177
Tanaka, H., see Aspnes 120 (1992) 71 Yamada, T., see Tokumitsu 120 (1992) 301
404 Author index
Yamada, T., see Sugiura 120 (1992) 389 Zhang, G., T. Hakkarainen, K. Rakennus, K
Yang, L., see Hersee 120 (1992) 218 Tappura, H. Asonen and M. Pessa, Low
Yasuda, Y., see Koide 120 (1992) 284 dark current In, <,Gay,,As/InP SAM
Yokouchi, N., see Uchida 120 (1992) 357 avalanche photodiodes grown by gas-
Yokoyama, N., see Ando 120 (1992) 228 source MBE 120 (1992) 172
Yoshida, S., see Okumura 120 (1992) 114 Zhang, J., see Lacklison 120 (1992) 50
Zhang, X.Q., see Benchimol 120 (1992) 189
Zahzouh, M., see Hincelin 120 (1992) 119 Zucker, J.E., see Chiu 120 (1992) 343
Zaima, S., see Koide 120 (1992) 284
Journal of Crystal Growth 120 (1992) 405-406 omc CRYSTAL
North-Holland GROWTH
Subject index
Aluminum by X-ray methods 98, 114, 124, 135, 167, 184, 212, 296, 328,
antimonide 25 333, 338, 343
gallium arsenide 84, 124, 189, 195, 206, 218, 228, 234, 240, by X-ray photoelectron spectroscopy 369
323, 362 Computer simulation
Antimonides of decomposition
of group III elements 252 of organic gallium precursors 57, 63
Apparatus
for thin film growth Devices
by chemical beam epitaxy lasers 157, 162, 177, 180, 317, 338
laser assisted microelectronic 218
of gallium arsenide 395 optical modulator applications 343
of III-V compounds 389 optoelectronic 157, 167, 349, 369
by molecular beam epitaxy photodiodes 140, 172
using light irradiation transistor 184, 218, 234, 240, 245, 296
waveguides 140
of germanium 284
for miscellaneous purposes Diffusional control 45
dynamic optical reflectivity 84 Gallium
measurement of second harmonic generation 94 aluminum arsenide 25. 57, 245
metalorganic molecular beam epitaxy of zinc chalco antimonide 25, 39
genides 261 arsenide 25, 33, 39, 45, 50, 57, 63, 71, 78, 88, 94, 103, 114,
monitoring concentration of gas mixtures 98 124, 200, 206, 218, 228, 234, 240, 245, 296, 306, 323, 362,
ultrahigh vacuum chemical vapor deposition 279 369, 389, 395
arsenide phosphide 389
indium arsenide 25, 33, 57, 140, 312, 338, 357
Characterization methods
indium arsenide phosphide 140, 145, 157, 180, 338, 349, 376
by Auger electron spectroscopy 57, 103
nitride 114
by cross-section transmission electron microscopy 245
phosphide 389
by direct recoil experiments 269
Germanium 284
by electrical methods 119, 124, 130, 140, 172, 180, 184, 200,
218, 228, 234, 240, 245, 261, 296, 301, 312, 317, 343, 349 Indium
by electron microscopy 155, 157, 245, 279, 338, 343, 353 aluminum arsenide 184
376, 382 arsenide 155
by Fourier transform infrared 328 gallium arsenide 33, 98, 135, 177, 184, 212, 301, 328, 333,
by infrared spectroscopy 323 382. 389
by mass spectrometry 25, 33, 39, 103, 119, 284
by optical microscopy 130, 212, 376, 382, 389 phosphide 98, 119, 130, 140, 150, 157, 162, 167, 180, 184,
by optical properties 84, 88, 395 312. 317, 328. 333, 343, 349, 353. 357. 362. 376. 389
by photoluminescence 124, 130, 140, 155, 162, 167, 180,
184, 189, 195, 200, 212, 218, 240, 252, 261, 296, 312, 333 Kinetics
338, 343, 349, 353, 357 of doping 312
by Raman spectroscopy 296 of growth 25, 33, 39, 45, 50, 57, 63, 78, 84, 88, 103, 140, 145,
by reflection high energy electron diffraction 50, 114, 200, 150, 162, 167, 206, 252, 261, 269, 275, 279, 284, 312, 338,
284. 290. 306. 382 343, 369, 376, 389, 395
by Rutherford back scattering 195
by second harmonic generation 94 of nucleation 140
by secondary ion mass spectrometry 189, 195, 206, 228, 234
Lattice mismatch 33, 135, 150, 167, 184, 189, 328, 338
245, 301, 306, 312, 317, 343
by spectroscopic methods 57, 63, 71, 78, 103, 130, 200, 240 Nonlinear optics 94
406 Subject index
Phase diagrams of silicon 269
of gallium arsenide 71 of III-V compounds 25, 389
Precursor metalorganic molecular beam epitaxy
organic aluminum 124 of aluminum gallium arsenide 124, 195, 218, 234
organic gallium 103 of gallium antimonide 39
organic phosphorus 150 gallium arsenide 39, 45, 50, 114, 124, 218, 234
gallium indium arsenide phosphide 140, 301, 312, 376
Quantum wells /size effects gallium nitride 114
of GaAs /AIAs 78 group III antimonides 252
of GalnAsP /GalnAs 338 indium gallium arsenide 382
of GalnAsP /InP 157, 162, 167, 180, 343, 349, of indium phosphide 312, 3 4 6
of InAs/InP 155 zinc chalcogenides 261
of InGaAs /InGaAsP 177 molecular beam epitaxy
of InP /InGaAs 328, 2$23 , advances in |
of aluminum gallium arsenide 228
Silicon 269, 279, 290 of gallium arsenide 71, 78, 200, 228 296, 306
germanium 279 of gallium indium arsenide phosphide 145, 15 + 167, 180,
Surface processes 25, 33, 5 349, 353
Surface structure 88 of germanium 284
of indium gallium arsenide 33, 172
Thin film growth of indium phosphide 157, 16 7, 172, 180, 317, 349, 353
by atomic layer epitaxy of silicon 290
of zinc chalcogenides 261 by vapor phase epitaxy
by chemical beam epitaxy through chemical vapor deposition
advances in | of silicon 269, 275
of aluminum gallium arsenide 84, 189, 206, 240, 245 of silicon—germanium 279
aluminum indium arsenide 189 through metalorganic chemical vapor deposition
gallium arsenide 33, 45, 63, 88, 103, 206, 240, 245 advances in |
of aluminum gallium arsenide 323, 362
indium aluminum arsenide 184 of gallium arsenide 71, 323, 362
indium arsenide 155 of indium gallium arsenide 98, 212
indium gallium arsenide 33, 135, 177, 184, 212, of indium gallium arsenide phosphide 150
, 338, 357 ot indium phosphide 98, 150, 362
of indium gallium arsenide phosphide 150, 1622 , 177
343
of indium phosphide 119, 130, 150, 162, 184, 328, Zinc
chalcogenides 261