Journal of Crystal Growth 1992: Vol 116 Index

9 Pages·1992·1.4 MB·English

Journal of Crystal Growth 116 (1992) ~vc CRYSTAL
North-Holland GROWTH
Author index
Adair, J.H., see Rossetti, Jr 116 (19922)5 1 Chandley, P. and R.J.H. Clark, The flux
Aibara, S. and Y. Morita, Crystal growth of growth of single crystals of vanadium
hen egg-white lysozyme using a crystal doped ZrSiO,, HfSiO,, ZrGeO, and
lization vessel produced for spacelab ex HfGeO, as well as of chromium-doped
periment 116 (1992) 289 ZrSiO, and terbium-doped ZrGeO, 116 (1992) 151
Alexiev, D., Extraction of metallic impurity Charniy, L.A., A.N. Morozov, K.D. Scherba
from gallium 116 (1992) 240 chov, V.T. Bublik and LV. Stepantsova,
Appenzeller, J., see Hardtdegen 116 (1992) 521 X-ray diffuse scattering identification of
Asano, M., see Harada 116 (1992) 243 matrix As-rich microdefects in GaAs
Aseev, A.L., see Krasilnikov 116 (1992) 178 crystals 116 (1992) 369
Azoulay, M., S. Rotter, G. Gafni and M Clark, R.J.H., see Chandley 116 (1992) 151
Roth, The crystalline quality distribution Cot, L., see Gomez Morales 116 (19924)2 7
in CdZnTe single crystal correlated to Cuisinier, F.J.G., J.C. Voegel, J. Yacaman
the interface shape during growth 116 (19925)1 5 and R.M. Frank, Structure of initial crys
tals formed during human amelogenesis 116 (1992) 314
Babijchuk, I.P.. E.F. Dolzhenkova, M.B
Kosmyna and V.V. Nekrasov, Growth of Dassonville, R., see Kern 116 (1992) 191
HTSC Bi-containing single crystals by the De Croon, M.H.J.M., see Hageman 116 (1992) 169
spontaneous crystallization method 116 (1992) 529 Dolginov, L.M., see Kazakov 116 (19922)0 4
Balzuweit, K., see Vogels 116 (1992) 397 Dolzhenkova, E.F., see Babijchuk 116 (19925)2 9
Basmaji, P., see Notari 116 (1992) 518 Durand, J., see Gomez Morales 116 (19924)2 7
Beam Ill, E.A.. T.S Henderson, A.C Dutta, P.K., see Narlikar 116(1992) 37
Seabaugh and J.Y. Yang, The use of
tertiarybutylphosphine and tertiarybutyl Fawcett, P.N., B.A. Joyce, X. Zhang and
arsine for the metalorganic molecular D.W. Pashley, Interface structure of InAs
beam epitaxy of the In, <,Gay ,>As/InP grown on GaAs(001) surfaces by molecu
and Ing 4.Gayg<>P/GaAs materials sys lar beam epitaxy 116 (1992)
tems 116 (1992) 436 Fernandez, R., RHEED oscillations of ar
Bennema, P., see Vogels 116 (1992) 397 senic-controlled growth conditions to op
Bensaoula, A., see Hansen 116 (1992) 271 timize MBE growth of III/V hetero
Binsma, J.J.M., see Kolar 116 (1992) 473 structures 116 (1992) 98
Bochkarev, A.E., see Kazakov 116 (1992) 204 Frank, R.M., see Cuisinier 116 (19923)1 4
Bowen, D.K., see Capano 116 (19922)6 0
Bublik, V.T., see Charniy 116 (1992) 369
Gafni, G.., see Azoulay 116 (1992) 515
Gao, Y., see Kazmierski 116(1992) 75
Capano, M.A., L. Hart, D.K. Bowen, D Garcia-Ybarra, P.1 ., see Castillo 116 (1992) 105
Gordon-Smith, C.R. Thomas, C.J. Gib- Ge, Y.L., see Jin 116 (19925)2 4
bings, M.A.G. Halliwell and L.W. Hobbs, Gibbings, C.J., see Capano 116 (1992) 260
Strain relaxation in Si, ,Ge, layers on Giling, L.J., see Hageman 116 (1992) 169
S001) 116 (1992) 260 Ginde, R.M. and A.S. Myerson, Cluster size
Carlson, DJ. and A.F. Witt, Quantitative estimation in binary supersaturated solu
analysis of the effects of vertical mag- tons 116(1992) 41
netic fields on microsegregation in Te- Gomez Morales, J., R. Rodriguez Clemente,
doped LEC GaAs 116 (19924)6 1 J. Durand and L. Cot, Solubility of berli-
Castillo, J.L., P.L. Garcia-Ybarra and D.E nite in H,SO,-HCI mixtures under hy
Rosner, Morphological instability of a drothermal conditions 116 (1992) 427
thermophoretically growing deposit 116 (1992) 105 Gordon-Smith, D., see Capano 116 (1992) 260
Journal of Crystal Growth 116 (1992) ~vc CRYSTAL
North-Holland GROWTH
Author index
Adair, J.H., see Rossetti, Jr 116 (19922)5 1 Chandley, P. and R.J.H. Clark, The flux
Aibara, S. and Y. Morita, Crystal growth of growth of single crystals of vanadium
hen egg-white lysozyme using a crystal doped ZrSiO,, HfSiO,, ZrGeO, and
lization vessel produced for spacelab ex HfGeO, as well as of chromium-doped
periment 116 (1992) 289 ZrSiO, and terbium-doped ZrGeO, 116 (1992) 151
Alexiev, D., Extraction of metallic impurity Charniy, L.A., A.N. Morozov, K.D. Scherba
from gallium 116 (1992) 240 chov, V.T. Bublik and LV. Stepantsova,
Appenzeller, J., see Hardtdegen 116 (1992) 521 X-ray diffuse scattering identification of
Asano, M., see Harada 116 (1992) 243 matrix As-rich microdefects in GaAs
Aseev, A.L., see Krasilnikov 116 (1992) 178 crystals 116 (1992) 369
Azoulay, M., S. Rotter, G. Gafni and M Clark, R.J.H., see Chandley 116 (1992) 151
Roth, The crystalline quality distribution Cot, L., see Gomez Morales 116 (19924)2 7
in CdZnTe single crystal correlated to Cuisinier, F.J.G., J.C. Voegel, J. Yacaman
the interface shape during growth 116 (19925)1 5 and R.M. Frank, Structure of initial crys
tals formed during human amelogenesis 116 (1992) 314
Babijchuk, I.P.. E.F. Dolzhenkova, M.B
Kosmyna and V.V. Nekrasov, Growth of Dassonville, R., see Kern 116 (1992) 191
HTSC Bi-containing single crystals by the De Croon, M.H.J.M., see Hageman 116 (1992) 169
spontaneous crystallization method 116 (1992) 529 Dolginov, L.M., see Kazakov 116 (19922)0 4
Balzuweit, K., see Vogels 116 (1992) 397 Dolzhenkova, E.F., see Babijchuk 116 (19925)2 9
Basmaji, P., see Notari 116 (1992) 518 Durand, J., see Gomez Morales 116 (19924)2 7
Beam Ill, E.A.. T.S Henderson, A.C Dutta, P.K., see Narlikar 116(1992) 37
Seabaugh and J.Y. Yang, The use of
tertiarybutylphosphine and tertiarybutyl Fawcett, P.N., B.A. Joyce, X. Zhang and
arsine for the metalorganic molecular D.W. Pashley, Interface structure of InAs
beam epitaxy of the In, <,Gay ,>As/InP grown on GaAs(001) surfaces by molecu
and Ing 4.Gayg<>P/GaAs materials sys lar beam epitaxy 116 (1992)
tems 116 (1992) 436 Fernandez, R., RHEED oscillations of ar
Bennema, P., see Vogels 116 (1992) 397 senic-controlled growth conditions to op
Bensaoula, A., see Hansen 116 (1992) 271 timize MBE growth of III/V hetero
Binsma, J.J.M., see Kolar 116 (1992) 473 structures 116 (1992) 98
Bochkarev, A.E., see Kazakov 116 (1992) 204 Frank, R.M., see Cuisinier 116 (19923)1 4
Bowen, D.K., see Capano 116 (19922)6 0
Bublik, V.T., see Charniy 116 (1992) 369
Gafni, G.., see Azoulay 116 (1992) 515
Gao, Y., see Kazmierski 116(1992) 75
Capano, M.A., L. Hart, D.K. Bowen, D Garcia-Ybarra, P.1 ., see Castillo 116 (1992) 105
Gordon-Smith, C.R. Thomas, C.J. Gib- Ge, Y.L., see Jin 116 (19925)2 4
bings, M.A.G. Halliwell and L.W. Hobbs, Gibbings, C.J., see Capano 116 (1992) 260
Strain relaxation in Si, ,Ge, layers on Giling, L.J., see Hageman 116 (1992) 169
S001) 116 (1992) 260 Ginde, R.M. and A.S. Myerson, Cluster size
Carlson, DJ. and A.F. Witt, Quantitative estimation in binary supersaturated solu
analysis of the effects of vertical mag- tons 116(1992) 41
netic fields on microsegregation in Te- Gomez Morales, J., R. Rodriguez Clemente,
doped LEC GaAs 116 (19924)6 1 J. Durand and L. Cot, Solubility of berli-
Castillo, J.L., P.L. Garcia-Ybarra and D.E nite in H,SO,-HCI mixtures under hy
Rosner, Morphological instability of a drothermal conditions 116 (1992) 427
thermophoretically growing deposit 116 (1992) 105 Gordon-Smith, D., see Capano 116 (1992) 260
Author index
Grasza, K. and U. Zuzga-Grasza, Tempera Karl, N., see MObus 116 (1992) 495
ture field computations in Pb, _,Sn,Te Kawakita, T., see Sakai 116 (19924)2 1
crystal grown by inverted Bridgman Kazakov, A.1., 1.N. Kishmar, A.E. Bochkarev
method 116 (1992) 139 and L.M. Dolginov, Stability analysis of
Guan, QO.C., see Wang 116 (1992) 27 quaternary In .Ga,_, Sb. As, _. alloys 116 (19922)0 4
Gupta, M.K., see Narlikar 116 (1992) 37 Kazmierski, C., D. Robein and Y. Gao, Uni
versal iron behaviour in Zn-, Cd- and
Hageman, P.R., M.H.J.M. de Croon, J.N.H Be-doped p-type InP 116 (1992) 75
Reek and L.J. Giling, Pressure and tem Kelly, K.W., see Motakef 116 (1992) 242
perature dependence of silicon doping of Kern, R. and R. Dassonville, Growth in
GaAs using SiH, in metalorganic chem hibitors and promoters examplified on
ical vapour deposition 116 (1992) 169 solution growth of paraffin crystals 116 (1992) 191
Halliwell, M.A.G., see Capano 116 (1992) 260 Kimura, R., M. Konagai and K. Takahashi,
Hansen, H.S., A. Bensaoula, S. Tougaard, J Atomic layer epitaxy of ZnSe on
Zborowski and A. Ignatiev, The tempera GaAs(100) by metalorganic molecular
ture dependent variation of bulk and sur beam epitaxy 116 (1992) 283
face composition of In,Ga,_,As on Kimura, S., T. Ishikawa, J. Mizuki and J
GaAs grown by chemical beam epitaxy Matsui, Analysis of minute strain fields
studied by RHEED, X-ray diffraction and around A-swirl defects in a float zone
XPS 116 (1992) 2 silicon crystal by means of plane wave
Harada, T., M. Asano and Y. Mizutani, Epi X-ray topography using extremely colli
taxial growth of Ag deposited on air mated X-rays 116 (1992) 22
cleaved MgO(100) surface by molecular Kimura, S., see Kitamura 116 (1992) 327
beam deposition 116 (1992) 2 Kishmar, I.N., see Kazakov 116 (1992) 204
Hardtdegen, H., R. Meyer, H. Loken-Lar Kitamura, K., J.K. Yamamoto, N. lyi, S
sen, J. Appenzeller, Th. Schapers and H Kimura and T. Hayashi, Stoichiometric
Lith, Extremely high electron mobilities LiNbO, single crystal growth by double
in modulation doped Ga,_,In, As/InP crucible Czochralski method using auto-
heterostructures grown by LP-MOVPI 116 (1992) 521 matic powder supply system 116 (1992) 327
Hart, L., see Capano 116 (1992) 260 Koai, K., see Motakef 116 (1992) 242
Hayashi, T., see Kitamura 116 (1992) 327 Kobayashi, T., see Mébus 116 (1992) 495
Henderson. T.S.. see Beam III 116 (1992) 436 Kolar, Z.1., J.J.M. Binsma and B. Subotic¢,
Hipélito, O., see Notari 116 (1992) 518 Kinetic study of the solution-mediated
Hobbs, L.W., see Capano 116 (1992) 260 transformation of orthorhombic barium
Hosogai, H., see Sakai 116 (1992) 421 fluoride into cubic barium fluoride 116 (1992) 473
Hu, Z.O.. see Jin 116 (1992) $24 Komatsu, S., see Okada 116 (1992) 307
Konagai, M., see Kimura 116 (1992) 283
Igasaki, Y., Epitaxial growth of aluminum Nae, retareeryeure data
doped zinc oxide films on (1120) oriented Krasilnikov, A.B., A.V. Latyshev, AL. Asees
sapphire substrates 116 (1992) and S.1. Stenin, Monoatomic step cluster
Kenetien A one Benson 116 (1992) 2 ing during superstructural transitions on
lijima, M., H. Tohda and Y. Moriwaki SATII) surface 16 (1992) 178
Growth and structure of lamellar mixed urtov, V.N., see Rossolenko 116 (1992) 165
crystals of octacalcium phosphate and
apatite in a model system of enamel for ang, A.R., see Walmsley 116 (1992) 2 25
mation 116 (1992) atyshev, A.V., see Krasilnikov 116 (1992) 178
Ishigaki, T., see Okada 116 (1992) i, Q., see Jiang 116(1992) 93
Ishikawa, T., see Kimura 116 (1992) in, C.H., see Wang 116 (19924)8 3
lyi, N., see Kitamura 116 (1992)
ju, O.M., see Jin 116 (19925)2 4
iu, Y.G., see Wang 116(1992) 27
Jiang, S.S.. Q. Li and X.Y. Xu, Growth oken-Larsen, H., see Hardtdegen 116 (19925)2 1
defects of natural beryls observed by X ukasiewicz, T. and A. Majchrowski,
ray topography 116(1992) 93 Czochralski growth of TeO, single crys
Jin, H., Y.L. Ge, QO.M. Liu, Z.O. Hu and tals under conditions of forced convec
C.H. Shi, Morphologies and structures of tion in the melt 116 (1992) 364
Bi-based oxide fibrous crystals 116 (1992) 524 umley, J.L., see Ristorcelli 116 (1992) 447
Joyce, B.A., see Fawcett 116 (1992) 81 uo, Zundu, see Wang 116 (1992) 505
534 Author index
Liith, H., see Tang 116 (1992) Pashley, D.W., see Fawcett 116(1992) 81
Lith, H., see Hardtdegen 116 (1992) 52 Patel, H. and M.E Pemble, External reflec
tion IR spectroscopy from trimethylgal
Majchrowski, A.., see Lukasiewicz 116 (1992) lium adsorbed at a GaAs(100) surface at
Matsui, J., see Kimura 116 (1992) 300 K a feasibility study 116 (1992) 511
Matsumoto, S., see Okada 116 (1992) Pemble, M.E., see Patel 116 (1992) S511
McKee, R.A., see Walker 116 (1992) Pet’kov, LS., see Rossolenko 116 (19921)8 5
Meekes, H., see Vogels 116 (1992)
Meyer, R.., see Hardtdegen 116 (1992) Radhakrishnan, S. and J.M. Schultz, Poly
Migita, M., see Ohsawa 116 (1992) mer-induced crystallization of inorganic
Mizuki, J., see Kimura 116 (1992) salts: PEO-CuCl 116 (1992)
Mizutani, Y., see Harada 116 (1992) ? Ramasamy, P., see Narlikar 116 (1992)
Modbus, M., N. Karl and T. Kobayashi, Struc Rashkovich, L.N., see Shekunov 116 (1992) 340
ture of perylene-tetracarboxylic-dian Red’kin, B.S., see Rossolenko 116 (1992) 185
hydride thin films on alkali halide crystal Reek, J.N.H see Hageman 116 (1992) 169
substrates 116 (1992) 495 Rinaudo, C. and A. Zarka X-ray topo
Morita, Y., see Aibara 116 (1992) 289 graphic study of synthetic single and
Moriwaki, Y., see lijima 116 (1992) 319 twinned gypsum crystals 116 (1992)
Moriyoshi, Y., see Okada 116 (1992) Ristorcelli, J.R. and J.l Lumley, Instabili
Morozov, A.N., see Charniy 116 (1992) 369 ties, transition and turbulence in the
Motakef, S., K.W. Kelly and K. Koai, Com- Czochralski crystal melt 116 (1992)
parison of calculated and measured dis Rivas, D., J. Sanz and (¢ Vazquez, Temper
location density in LEC-grown GaAs ature field in a cylindrical crystal heated
crystals (E) 116 (1992) in a mono-ellipsoid mirror furnace 116 (1992)
Myerson, A.S., see Ginde 116 (1992) Robein, D., see Kazmierski 116 (1992)
Rodriguez Clemente, R., see G6mez Morales 116 (1992)
Narlikar, A.V., P.K. Dutta, $.B. Samanta, Rodway, D.¢ \ simple system for multi
O.N. Srivastava, P. Ramasamy, S.¢ wafer large area, thick film growth of
Sabarwal, M.K. Gupta and B.D. Padalia, cadmium telluride on gallium arsenide 116 (1992)
STM studies of growth spirals in bulk Rooney, M.-L.T., {115} Growth in boron
single crystals of superconducting Y-123 doped synthetic diamonds 116(1992) 15
and Bi-2122 116 (1992) Rosner, D.E., see Castillo 116 (1992) 105
Nekrasov, V.V., see Babijchuk 116 (1992) § Rossetti, Jr.. G.A., DJ. Watson, R.E. Newn
Newnham, R.E., see Rossetti, Jr 116 (1992) 2 ham and J.H. Adair, Kinetics of the hy
Notari, A.C., B. Schrappe, P. Basmaji and drothermal crystallization of the per
O. Hipdlito, Heavily Se spike-doped ovskite lead titanate 116 (1992) 2
GaAs grown by molecular beam epitaxy 116 (1992) Rossolenko, S.N., LS. Pet’kov, V.N. Kurlov
and B.S. Red’kin, Servo-controlled crys
Ogihara, S., see Yase 116 (1992) tal growth by the Czochralski method
Ohsawa, J., A. Tomita and M. Migita, LPE estimating the state vector of the con
growth of undoped n-type GaAs at 636°C trolled object 116 (1992) 185
with extremely low compensation 116 (1992) Roth, M., see Azoulay 116 (1992) 515
Okada, K., S. Komatsu, T. Ishigaki, S$. Mat- Rotter, S., see Azoulay 116 (19925)1 5
sumoto and Y. Moriyoshi, Spontaneous Rousseau, R.W , see Tai 116 (1992) 294
growth of whiskers from an interlayer of
Mo,C beneath a diamond particle de- Sabarwal, S.C., see Narlikar 116 (1992)
posited in a combustion-flame 116 (1992) Sakai, H., H. Hosogai, T. Kawakita, K. On
Okada, M., see Yase 116 (1992) uma and K. Tsukamoto, Transformation
Olszyna, A., see Sokotowska 116 (1992) § of a-glycine to y-glycine 116 (19924)2 1
Onuma, K., see Sakai 116 (19924)2 1 Samanta, S.B., see Narlikar 116(1992) 37
Ovrutsky, A.M.., Numerical analysis of Sano, M., see Yase 116 (1992) 333
faceted shape stability during growth Sanz, J., see Rivas 116 (1992) 127
from stagnant solutions 116 (1992) 158 Schapers, Th., see Hardtdegen 116 (19925)2 1
Scherbachov, K.D., see Charniy 116 (1992) 369
Padalia, B.D., see Narlikar 116 (1992) Schrappe, B., see Notari 116 (1992) 518
Parsons, J.D., Inverted-vertical OMVPE re- Schultz, J.M., see Radhakrishnan 116 (1992) 378
actor: design and characterization 116 (1992) 387 Seabaugh, A.C , see Beam Ill 116 (19924)3 6
duthor index
Shekunov, B.Yu., L.N. Rashkovich and L.I Walker, F.J. and R.A. McKee, High-temper-
Smol’skii, Nonstationary growth of the ature stability of molecular beam
cubic faces of a barium nitrate crystal 116 (1992) 340 epitaxy-grown multilayer ceramic com-
Shi, C.H., see Jin 116 (1992) 524 posites: TiO /Ti,O, 116 (1992)
Shih, Z.W., see Wang 116 (1992) 483 Walmsley, J.C. and A.R. Lang, Study of a
Smol'skii, L.L., see Shekunov 116 (1992) 340 platelet-free infilling of a crack in natural
Sokolowska, A. and A. Olszyna, Electron diamond: evidence for a late growth event 116 (19922)2 5
assisted chemical synthesis of E-BN 116 (1992) Wang, Guofu and Zundu Luo, Crystal growth
Speckman, D.M Ultraviolet and infrared of KY(WO,),: Er°?* Yb°* 116 (1992) 505
absorption spectra of promising organo Wang, J.Y., O.C. Guan, J.Q. Wei, M. Wang
arsine photochemical vapor deposition and Y.G. Liu, Growth and characteriza
reagents 116 (1992) tion of cubic KTa,_. Nb_O, crystals 116 (1992)
Srivastava, O.N.. see Narlikar 116 (1992) Wang, M., see Wang 116 (1992)
Stenin, S.1., see Krasilnikov 116 (1992) Wang, M.L., Z.W. Shih and C.H. Lin, Kinet
Stepantsova, I1.V., see Charniy 116 (1992) ics Of producing barium hexaferrite in a
Subotic, B., see Kolar 116 (1992) low alkaline concentration by hydrother
Suddath, F.L., see Wilson 116 (1992) mal method 116 (19924)8 3
Wargo, M.J. and A.F. Witt, Real time ther
Tai, C.Y., J.F. Wu and R.W. Rousseau, In mal imaging for analysis and control of
terfacial supersaturation, secondary nu crystal growth by the Czochralski tech
cleation, and crystal growth 116 (1992) 294 nique 116 (19922)1 3
Takahashi, K., see Kimura 116 (1992) 283 Watson, D_J., see Rossetti, Jr 116 (19922)5 1
Tang, H.P., L. Vescan and H. Lith, Equilib Wei, J.0O., see Wang 116 (1992) 27
rium thermodynamic analysis of the Si Wilson, LJ. and F.L. Suddath, Control of
Ge-Cl-H system for atmospheric and solvent evaporation in hen egg white
low pressure CVD of Si, _.Ge, 116 (1992) | lysozyme crystallization 116 (19924)1 4
Thomas, C.R see Capano 116 (1992) 260 Witt, A.F see Wargo 116 (1992) 213
Tohda, H see lijima 116 (1992) 319 Witt, A.F., see Carlson 116 (1992) 461
Tomita, A., see Ohsawa 116 (1992) 351 Wu, J.F., see Tai 116 (1992) 294
Tougaard, S., see Hansen 116 (1992) 271
Xu, X.Y see Jiang 116(1992) 93
Tronin, A.Yu., Ellipsometric study of grow
ing crystal face: (1010) LilO, 116 (1992) Yacaman, J , See Cuisinier 116 (1992) 314
Tsukamoto, K., see Sakai 116 (1992) Yamamoto, J.K., see Kitamura 116 (1992) 327
Yang, J.Y., see Beam 116 (19924)3 6
Vazquez, C., see Rivas 116 (1992) Yase, K., S. Ogihara, M. Sano and M. Okada,
Vescan, L., see Tang 116 (1992) Thin film formation of polymorph-con
Voegel, J.C., see Cuisinier 116 (1992) 314 trolled triglycerides by physical vapor de
Vogels, L.J.P., K. Balzuweit, H. Meekes and position 116 (1992) 333
P. Bennema, A study on the morphology Zarka, A., see Rinaudo 116(1992) 8&7
and stability of incommensurately mod Zborowski, J see Hansen 116 (19922)7 1
ulated structures; a case study of Zhang, X., see Fawcett 116(1992) 8&1
((CH ,),N),ZnCl,_ . Br, 116 (1992) Zuzga-Grasza, U., see Grasza 116 (19921)3 9
Journal of Crystal Growth 116 (1992) 536-538 waco CRYSTAL
North-Holland GROWTH
Subject index
Adsorption 511 by ellipsometry 63, .3 87
Aluminum by Fourier transform infrared 511
gallium arsenide 98 »y infrared spectroscopy 15, 48, 461
orthophosphate 427 »y interferometry 64, 340
Apparatus »y low energy electron diffraction 2
for solution growth %9y Optical microscopy 15 93
solvent evaporation 461, 473, 524, 529
of lysozyme 414 %y particle size distribution analysis
for thin film growth by photoluminescence 169, 283, 351
by metalorganic molecular beam epitaxy »y photorefraction 27
of zinc selenide 283 by reflection electron microscopy 178
for miscellaneous purposes »y reflection high energy electron diffraction 98, 271
automatic powder supply system 327 »y Scanning tunneling microscopy 37
crystal growth under microgravity 289 %”y secondary ion mass spectrometry 55, 75
epitaxial growth (MOVPE) reactor 387 »y thermal imaging 213
thermal imaging 213 by X-ray methods
ultrahigh vacuum evaporation 55 369, 378. 495. 505. 507. 515. $24. 529
Arsenic by X-ray photoelectron spectroscopy
organic 48 ( lusters 41, 204
( omputer simulation 139
Constitutional supercooling 105, 364
Barium
fluoride 4732 ( onvection 139, 364, 447
. ( opper
hexaferrite 483
chloride 378
nitrate 340
Beryl 93
Bismuth 158 Dendritic growth 158, 191
strontium calcium cuprate 37, 524, 529 Devices 387, 436
Boron Diamond 15 76
nitride 507 Diffusional control 41, 55, 158, 251, 294, 518
Boundary layer control 63 Dislocations 37, 87, 260, 30 340, 364, 515
Dissolution 421, 473
Distribution coefficient 191, 461, 515
Cadmium Dopants 15, 75, 151, 169, 191, 369, 436, 461, 518, 521
telluride 55
zinc telluride 515
Calcium Etching zoe
hydroxyapatite 314, 319 chemical 364, 369, 515
sulphate dihydrate 87
Cellular growth 364 Gadolinium
Characterization methods molybdate 185
by absorption spectroscopy 48, 327 Gallium
by Auger electron spectroscopy 213 arsenide 48, 98, 169, 213, 240, 351, 369, 387, 461, 511, 518
by differential thermal analysis 505 indium arsenide 521
by electrical methods 27, 169, 351, 387, 518, 521, 52 Germanium 158
by electron diffraction 495, 524 Glycine 421
by electron microscopy 15, 81, 225, 243, 251, a Gold
333, 436, 495, 507, 524, 529 telluride 397
by electron probe microanalysis 151, 524 Gypsum 87
Subject index
Hafnium Nucleation 41, 294, 307
germanate 151 Numbers
silicate 151 Grashof 447
Heat flow control 127~, ~ 139 Nusselt 139
Heterojunction 436, 521 Peclet 139
Seeger 158
Impurity 225 Sherwood 158
Inclusions 63 Numerical analysis 158
Indium
arsenide 81 Organic crystals 191, 289,
gallium antimonide arsenide 204
gallium arsenide 98, 271 436 Perfection of crystals 22,
gallium phosphide 436 369. 515
organic 511 Phase diagrams 178, 204
phosphide 75 Phenomenological theory 294
Interface 63, 81, 98, 139
Polymorphism /polytypism 333, 4
S18 Potassium
tantalate niobate 2
Kinetics yttrium tungstate 505
growth 63, 158, 169, 251, 283, 294, 319, 340, 414, 473, 483 Precursor 48, 436
interface control 158, 294, 414 Purification of materials 240, 414
nucleation 158, 191, 294, 414, 483, 495
transformation 421, 473 Segregation 461
Silicon 22, 178
Lasers 505 germanium |, 260
Lead Silver 243
tin telluride 139 Solid growth technique
titanate 2> 51 by polymorphic transformation
Lithium of barium fluoride 473
iodate 63 of triglycerides 333
niobate 185 by recrystallization
Lysozyme 289 of copper chloride 378
Solubility 427
Mathematical model 139 Solution growth technique
Melt growth technique by flux method
by Bridgman-—Stockbarger method of boron nitride 507
of cadmium zinc telluride 515 of diamond 15
of lead tin telluride 139 hafnium germanate 151
theory of 139 hafnium silicate 151
Czochralski method potassium tantalate niobate 27
of gadolinium molybdate 185 potassium yttrium tungstate 505
of gallium arsenide 213, 369, 461 zirconium germanate 151
of lithium niobate zirconium silicate 151
of tellurium dioxide 364 by hydrothermal growth
theory of 447 of aluminum orthophosphate 427
floating zone method of barium hexaferrite 483
theory of 22 of lead titanate 251
uniaxial solidification by low temperature method
of bismuth strontium calcium cuprate 529 of barium nitrate 340
zone melting of gypsum 87
of gallium arsenide 369 of lithium iodate 63
Microgravity 105, 127, 289 of lysozyme 289
Molybdenum by solvent evaporation
carbide 307 of lysozyme 414
Morphological stability 105, 158, Statistical mechanics, molecular theory 397
Morphology of growth 15, 27, 87 Stefan problem or moving boundary problem 158
319, 333, 340, 378, 397, 421, 473, 495, 524 Step 158, 178
538 Subject index
Strain 81, 260, 271 of triglycerides 333
Superconductivity 37, 529 through evaporation and condensation
bulk 37, 529 of cadmium telluride 55
characterization 37, 529 through metalorganic chemical vapor deposition
crystal chemistry 529 of gallium arsenide 169, 511
high 7. 37, 529 of gallium indium arsenide 521
stoichiometry 529 through photochemical stimulation
Supercooling, supersaturation 41, 158, 294, 427, 515 of gallium arsenide 48
Superlattices 235, 397 theory of 48
Surface energy, determination of 397 by sputtering
Surface processes 158, 283, 397 of zinc oxide 357
Surface structure 178, 397 Three—five (II1I-V) compounds 98, 436
Titanium
Tellurium oxides 235
dioxide 364 Twinning 87
Thermodynamics 1, 41, 204
Thin film growth Vapor growth technique
by chemical beam epitaxy
by combustion flame method
of indium gallium arsenide 271
of molybdenum carbide 307
by liquid phase epitaxy
theory of 105
of ga. llium arse>n ide » 2& 40, 135 1 Vapor-liquid—solid growth
of indium gallium antimonide > arse>n ide » 2> 04 of lysozyme 414
metalorganic molecular beam epitaxy
of gallium arsenide 511
Whisker growth
of zinc selenide 283 .
of bismuth strontium calcium cuprate 524
molecular beam epitaxy
ss of molybdenum carbide 307
of gallium arsenide 518
of indium arsenide 81
organic crystals 495 Yttrium
: 29
silicon germanide 260 barium cuprate 3
silver 243
IlI-V compounds 98, 436 Zinc
titanium oxides 235 halides 397
by vapor phase epitaxy oxide 357
through chemical vapor deposition selenide 283
of gallium arsenide 387 Zirconium
of indium phosphide 75 germanate 151
of silicon germanide | silicate 151