Journal of Crystal Growth 1991: Vol 109 Index

9 Pages·1991·1.7 MB·English

Journal of Crystal Growth 109 (1991) 472-476
North-Holland
Author index
Abernathy, C.R., A.S. Jordan, S.J. Pearton,
F. Ren, F. Baiocchi, D.A. Bohling and Bierlein, J.D., see Morris 109 (1991) 367
G.T. Muhr, The feasibility of using tri- Birkedal, D., see Wang 109 (1991) 285
methylamine alane as an Al precursor for Black, L.R., see Johnson 109 (1991) 24
MOMBE 109 (1991) 31 Black, L.R., 1.0. Clark, B.A. Fox and W.A.
109 (19913)8 5
Akiyama, S., see Utsu Jesser, MOCVD of GaAs in a horizontal
Alexander, J.I.D., see Xiao 109 (1991) 43 reactor: modeling and growth 109 (19912)4 1
André, J.P., J.N. Patillon, C. Schiller, J.Y. Blom, G.M., see McGee 109 (19913)6 1
Lesiourd, O. Vlaeminck and N. Mal- Bohling, D.A., see Abernathy 109 (1991) 31
houroux, Properties of GaInAs(P)/InP Brandle, C.D., see Fratello 109 (19913)3 4
multilayers and superlattices grown by Brandle, C.D., see Berkstresser 109 (19914)5 7
MOVPE at atmospheric pressure 109 (19912)9 2 Brandle, C.D., see Berkstresser 109 (19914)6 7
Aziz, M.J., see Hoglund 109 (19911)0 7 Brown, R.A. and D.H. Kim, Modelling of
directional solidification: from Scheil to
Bacewicz, R. and T.F. Ciszek, Liquid en- detailed numerical simulation 199 (1991) 50
capsulated crystal growth and electrical Brown, R.A., see Kim 109 (1991) 66
properties of Sb,Se, and Bi,S, 109 (1991) 133 Bucher, E., see Baumgartner 109 (19913)1 8
Baiocchi, F., see Abernathy 109 (1991) 31 Bugg, Ch.E., see DeLucas 109 (1991) 12
Barber, P.G., Moments of momenta as pre- Burger, A., D.O. Henderson, S.H. Morgan
dictors of “molecular” species in crystal and E. Silberman, Purification, crystal
growth solutions 109 (1991) 99 growth and characterization of CdSe
Barbour, J.C., see Venturini 109 (19914)4 1 single crystals 109 (19913)0 4
Barrett, D.L., R.G. Seidensticker, W. Gaida,
R.H. Hopkins and W.J. Choyke, SiC boule Cao, D.S., E.H. Reihlen, G.S. Chen, A.W.
growth by sublimation vapor transport 109 (1991) 17 Kimball and G.B. Stringfellow, Effect of
Bathey, B., see Kalejs 109 (1991) 174 growth rate on properties of Gag 5;In4g9 P
Baughman, R.J., see Venturini 109 (1991) 441 grown by organometallic vapor phase epi-
Baumgartner, F.P., M. Lux-Steiner, G. Doell, taxy 109 (19912)7 9
E. Bucher, F. Meier and A. Vaterlaus, Carlson, F., see Rosch 109 (1991) 75
Electronic, crystallographic and spin Carter, D.C., see DeLucas 109 (1991) 12
polarized properties of doped CdSiAs, Chakrabarti, U.K., see Zilko 109 (19912)6 4
single crystals 109 (1991) 318 Chao, C.C., see Rajendran 109 (1991) 82
Belt, R.F. and R. Uhrin, Top seeded solution Chen, A.-B., see Krishnamurthy 109 (1991) 88
growth of Cr?* : LiCaAlF, in HF atmos- Chen, G.S., see Cao 109 (19912)7 9
phere 109 (19913)4 0 Chen, G.S., see Wang 109 (19912)8 5
Berding, M.A., see Krishnamurthy 109 (1991) 88 Chen, T.P., see Lie 109 (19912)0 5
Berkstresser, G.W., A.J. Valentino and C.D. Choyke, W.J., see Barrett 109 (1991) 17
Brandle, Growth of single crystals of rare Ciszek, T.F., see Bacewicz 109 (19911)3 3
earth gallates 109 (1991) 457 Ciszek, T.F., see Wang 109 (19911)5 5
Berkstresser, G.W., A.J. Valentino and C.D. Ciszek, T.F. and C.D. Evans, Single-crystal
Brandle, Growth of single crystals of growth and low-field AC magnetic sus-
lanthanum aluminate 109 (19914)6 7 ceptometry of YBa,Cu,0,_5, ErBa,Cu,
Bertness, K.A., J.J. Cubbage and J.G. O7_5, and Bi,Sr,CaggCu,O, supercon-
Werthen, Growth rate, doping, and com- ductors 109 (19914)1 8
positional uniformity in an atmospheric- Clark, 1.0., see Johnson 109 (1991) 24
pressure multiwafer OMVPE reactor 109 (1991) 234 Clark, I.0., see Black 109 (19912)4 1
Biefeld, R.M. and G.A. Hebner, Growth of Clark, 1.0., A.L. Fripp and W.A. Jesser,
InSb on GaAs by metalorganic chemical MOCVD manifold switching effects on
vapor deposition 109 (1991) 272 growth and characterization 109 (19912)4 6
Journal of Crystal Growth 109 (1991) 472-476
North-Holland
Author index
Abernathy, C.R., A.S. Jordan, S.J. Pearton,
F. Ren, F. Baiocchi, D.A. Bohling and Bierlein, J.D., see Morris 109 (1991) 367
G.T. Muhr, The feasibility of using tri- Birkedal, D., see Wang 109 (1991) 285
methylamine alane as an Al precursor for Black, L.R., see Johnson 109 (1991) 24
MOMBE 109 (1991) 31 Black, L.R., 1.0. Clark, B.A. Fox and W.A.
109 (19913)8 5
Akiyama, S., see Utsu Jesser, MOCVD of GaAs in a horizontal
Alexander, J.I.D., see Xiao 109 (1991) 43 reactor: modeling and growth 109 (19912)4 1
André, J.P., J.N. Patillon, C. Schiller, J.Y. Blom, G.M., see McGee 109 (19913)6 1
Lesiourd, O. Vlaeminck and N. Mal- Bohling, D.A., see Abernathy 109 (1991) 31
houroux, Properties of GaInAs(P)/InP Brandle, C.D., see Fratello 109 (19913)3 4
multilayers and superlattices grown by Brandle, C.D., see Berkstresser 109 (19914)5 7
MOVPE at atmospheric pressure 109 (19912)9 2 Brandle, C.D., see Berkstresser 109 (19914)6 7
Aziz, M.J., see Hoglund 109 (19911)0 7 Brown, R.A. and D.H. Kim, Modelling of
directional solidification: from Scheil to
Bacewicz, R. and T.F. Ciszek, Liquid en- detailed numerical simulation 199 (1991) 50
capsulated crystal growth and electrical Brown, R.A., see Kim 109 (1991) 66
properties of Sb,Se, and Bi,S, 109 (1991) 133 Bucher, E., see Baumgartner 109 (19913)1 8
Baiocchi, F., see Abernathy 109 (1991) 31 Bugg, Ch.E., see DeLucas 109 (1991) 12
Barber, P.G., Moments of momenta as pre- Burger, A., D.O. Henderson, S.H. Morgan
dictors of “molecular” species in crystal and E. Silberman, Purification, crystal
growth solutions 109 (1991) 99 growth and characterization of CdSe
Barbour, J.C., see Venturini 109 (19914)4 1 single crystals 109 (19913)0 4
Barrett, D.L., R.G. Seidensticker, W. Gaida,
R.H. Hopkins and W.J. Choyke, SiC boule Cao, D.S., E.H. Reihlen, G.S. Chen, A.W.
growth by sublimation vapor transport 109 (1991) 17 Kimball and G.B. Stringfellow, Effect of
Bathey, B., see Kalejs 109 (1991) 174 growth rate on properties of Gag 5;In4g9 P
Baughman, R.J., see Venturini 109 (1991) 441 grown by organometallic vapor phase epi-
Baumgartner, F.P., M. Lux-Steiner, G. Doell, taxy 109 (19912)7 9
E. Bucher, F. Meier and A. Vaterlaus, Carlson, F., see Rosch 109 (1991) 75
Electronic, crystallographic and spin Carter, D.C., see DeLucas 109 (1991) 12
polarized properties of doped CdSiAs, Chakrabarti, U.K., see Zilko 109 (19912)6 4
single crystals 109 (1991) 318 Chao, C.C., see Rajendran 109 (1991) 82
Belt, R.F. and R. Uhrin, Top seeded solution Chen, A.-B., see Krishnamurthy 109 (1991) 88
growth of Cr?* : LiCaAlF, in HF atmos- Chen, G.S., see Cao 109 (19912)7 9
phere 109 (19913)4 0 Chen, G.S., see Wang 109 (19912)8 5
Berding, M.A., see Krishnamurthy 109 (1991) 88 Chen, T.P., see Lie 109 (19912)0 5
Berkstresser, G.W., A.J. Valentino and C.D. Choyke, W.J., see Barrett 109 (1991) 17
Brandle, Growth of single crystals of rare Ciszek, T.F., see Bacewicz 109 (19911)3 3
earth gallates 109 (1991) 457 Ciszek, T.F., see Wang 109 (19911)5 5
Berkstresser, G.W., A.J. Valentino and C.D. Ciszek, T.F. and C.D. Evans, Single-crystal
Brandle, Growth of single crystals of growth and low-field AC magnetic sus-
lanthanum aluminate 109 (19914)6 7 ceptometry of YBa,Cu,0,_5, ErBa,Cu,
Bertness, K.A., J.J. Cubbage and J.G. O7_5, and Bi,Sr,CaggCu,O, supercon-
Werthen, Growth rate, doping, and com- ductors 109 (19914)1 8
positional uniformity in an atmospheric- Clark, 1.0., see Johnson 109 (1991) 24
pressure multiwafer OMVPE reactor 109 (1991) 234 Clark, I.0., see Black 109 (19912)4 1
Biefeld, R.M. and G.A. Hebner, Growth of Clark, 1.0., A.L. Fripp and W.A. Jesser,
InSb on GaAs by metalorganic chemical MOCVD manifold switching effects on
vapor deposition 109 (1991) 272 growth and characterization 109 (19912)4 6
Author index 473
Cronin-Golomb, M., Nonlinear optics and Henry, R.L., see DeSisto 109 (1991) 314
phase conjugation in photorefractive ma- Hermon, H., M. Roth, J. Nissenbaum, M.
terials 109 (1991) 345 Schieber and J. Shamir, Stoichiometry and
Crouse, A.G., J.E. Huffman, C.S. Tindall and electrical charge transport in Hgl, crystals 109 (1991) 376
M.L.W. Thewalt, Float zone growth of Hill, D.P., see Rajendran 109 (1991) 82
high purity and high oxygen concentra- Hirata, A., see Okano 109 (1991) 94
tion silicon 109 (1991) 162 Hoglund, D.E., M.J. Aziz, S.R. Stiffler, M.O.
Cubbage, J.J., see Bertness 109 (1991) 234 Thompson, J.Y. Tsao and P.S. Peercy,
Culotta, P.W., see Johnson 109 (1991) 24 Effect of nonequilibrium interface kinet-
ics on cellular breakdown of planar inter-
Dahlem, A., see Wenzl 109 (1991) 191 faces during rapid solidification of Si-Sn 109 (1991) 107
Debnam, Jr., W.J., see Knuteson 109 (1991) 127 Hopkins, R.H., see Barrett 109 (1991) 17
DeLucas, L.J., C.D. Smith, D.C. Carter, R.S. Hozawa, M., see Okano 109 (1991) 94
Snyder, A. McPherson, S. Koszelak and Huffman, J.E., see Crouse 109 (19911)6 2
Ch.E. Bugg, Microgravity protein crystal Hsu, J.T., see Lie 109 (19912)0 5
growth; results and hardware develop- Hyer, P.V., see Johnson 109 (1991) 24
ment 109 (1991) 12
DeSisto, W.J. and R.L. Henry, Preparation Imaishi, N., see Okano 109 (1991) 94
and characterization of MgO thin films
Jarman, R.H. and M. Munowitz, Approaches
deposited by spray pyrolysis of Mg(2,4-
pentanedionate), 109 (1991) 314 to understanding structure—property rela- 109 (1991) 353
Doell, G., see Baumgartner 109 (1991) 318 tionships in nonlinear optical materials 109 (1991) 241
Downey, J., see Liu 109 (1991) 436 Jesser, W.A., see Black 109 (1991) 246
Dubé, C., see Kalejs 109 (1991) 174 Jesser, W.A., see Clark 109 (1991) 252
Jesser, W.A., see Fox
109 (1991) 323
109 (1991) 418 Jia, W., see Tissue
Evans, C.D., see Ciszek
Jia, W., L. Lu, B.M. Tissue and W.M. Yen,
Fattah, A., see Wenzl 110099 ((11999911)) 139617 Vioanlse nicne sianngdl e-scirtey stoaclc upfoartsitoenri teo f fcibherros mium 109 (1991) 329
Ferretti, A., see Morris Jia, Y.X., see Liu 109 (1991) 436
Flat, A., Silicon incorporation anomaly in 109 (1991) 224 Johnson, E.J., P.V. Hyer, P.W. Culotta, L.R.
LEC grown GaAs 109 (1991) 241 Black, 1.0. Clark and M.L. Timmons,
Fox, B.A., see Black Characterization of MOCVD fluid dy-
Fox, B.A. and W.A. Jesser, Critical thickness 109 (1991) 24
namics by laser velocimetry
in epitaxial GaAsP: comparison of theory 109 (1991) 252 Jordan, A.S., see Abernathy 109 (1991) 31
and experiment
Fratello, V.J. and C.D. Brandle, Thermo- Kalejs, J.P., see Rajendran 109 (1991) 82
physical properties of a LiCaAlF, melt 109 (1991) 334 Kalejs, J.P., B. Bathey and C. Dubé, Segrega-
109 (1991) 127
Fripp, A.L., see Knuteson tion and impurity effects in silicon grown
109 (1991) 246
Fripp, A.L., see Clark from the melt in the presence of second
Fujiwara, H., see Kobayashi 109 (1991) 149 phase formation 109 (1991) 174
Fujiwara, T., see Kobayashi 109 (1991) 149 Katayama, S., see Yokota 109 (1991) 298
Fukuda, T., see Okano 109 (1991) 94 Katsuno, H., see Sukegawa 109 (1991) 186
Fukuda, T., see Saito 109 (1991) 426 Kibbler, A.E., S.R. Kurtz and J.M. Olson,
Carbon doping and etching of MOCVD-
109 (1991) 17
Gaida, W., see Barrett grown GaAs, InP, and related ternaries
109 (1991) 441
Ginley, D.S., see Venturini using CCl, 109 (1991) 258
109 (1991) 432
Ginsberg, D.M., see Rice Kim, D.H., see Brown 109 (1991) 50
109 (1991) 228
Gorman, R.J., see Henry Kim, D.H. and R.A. Brown, Transient simu-
109 (1991) 205
Guo, Y.D., see Lie lations of convection and solute segrega-
tion of GaAs growth in gradient freeze
Hayakawa, Y., see Ozawa 109 (1991) 212 furnace 109 (1991) 66
Hebner, G.A., see Biefeld 109 (1991) 272 Kimball, A.W., see Cao 109 (1991) 279
Henderson, D.O., see Burger 109 (1991) 304 Kimball, A.W., see Wang 109 (1991) 285
Henkel, D., see Wenzl 109 (1991) 191 Kimura, M., A. Tanaka and T. Sukegawa,
Henry, R.L., P.E.R. Nordquist, R.J. Gorman Convection phenomenon during the dis-
and S.B. Qadri, Growth of (100) GaAs by solution of silicon in an indium solution 109 (1991) 181
vertical zone melting 109 (1991) 228 Kimura, M., see Sukegawa 109 (1991) 186
474 Author index
Klavins, P., see Liu 109 (1991) 436 McCrary, V.R., see Zilko 109 (1991) 264
Knuteson, D.J., A.L. Fripp, G.A. Woodell, McGee, T.F., G.M. Blom and G. Kostecky,
W.J. Debnam, Jr. and R. Narayanan, Growth and characterization of doped
Oscillation phase relations in a Bridgman KTP crystals 109 (19913)6 1
system 109 (1991) 127 McPherson, A., see DeLucas 109 (1991) 12
Kobayashi, S., S. Miyahara, T. Fujiwara, T. Meier, F., see Baumgartner 109 (19913)1 8
Kubo and H. Fujiwara, Turbulent heat Melcher, C.L., J.R. Schweitzer, R.A. Manente
transfer through the melt in silicon and C.A. Peterson, Applications of single
Czochralski growth 109 (19911)4 9 crystals in oil well logging 109 (1991) 37
Kohler, H., see Mateika 109 (19914)4 7 Mika, K., see Wenzl 109 (19911)9 1
Kostecky, G., see McGee 109 (19913)6 1 Mitchell, M.A., see Venturini 109 (19914)4 1
Koszelak, S., see DeLucas 109 (1991) 12 Miyahara, S., see Kobayashi 109 (19911)4 9
Krishnamurthy, S., M.A. Berding, A. Sher Moomaw, W.R., Photovoltaics and materials
and A.-B. Chen, Epitaxially grown semi- science: helping to meet the environmen-
conductor surfaces 109 (1991) 88 tal imperatives of clean air and climate
Kubo, T., see Kobayashi 109 (19911)4 9 change 109 (1991) 1
Kumagawa, M., see Ozawa 109 (19912)1 2 Morgan, S.H., see Burger 109 (19913)0 4
Kurtz, S.R., see Kibbler 109 (19912)5 8 Morosin, B., see Venturini 109 (1991) 441
Morris, P.A., A. Ferretti, J.D. Bierlein and
Lam, D.J., see Liu 109 (1991) 436 G.M. Loiacono, Reduction of the ionic
Lara V., J.A., H.G. Riveros, J. Reyes-Gasga conductivity of flux grown KTiOPO,
crystals 109 (19913)6 7
and M.J. Yacaman, Growth of long qua-
sicrystals in an Al-Cu—Co alloy 109 (19911)3 7 Mubhr, G.T., see Abernathy 109 (1991) 31
109 (19914)4 7 Munowitz, M., see Jarman 109 (19913)5 3
Laudan, H., see Mateika
Lehoczky, S.L., see Su 109 (19913)9 2
Lesiourd, J.Y., see André 109 (19912)9 2 Nakajima, T., see Yokota 109 (19912)9 8
Lie, K.H., J.S. Walker and D.N. Riahi, Melt Narayanan, R., see Knuteson 109 (1991) 127
motion in the float zone process with an Nissenbaum, J., see Hermon 109 (19913)7 6
axial magnetic field 109 (19911)6 7 Noda, K., see Matsumoto 109 (19913)0 9
Lie, K.H., J.T. Hsu, Y.D. Guo and T.P. Chen, Nordquist, P.E.R., see Henry 109 (19912)2 8
Influence of through-window radiation on Norton, M.L., see Tissue 109 (19913)2 3
the horizontal Bridgman process for rec-
tangular shaped GaAs crystals 109 (1991) 205 Okano, Y., T. Fukuda, A. Hirata, N. Takano,
Liu, J.Z., Y.X. Jia, P. Klavins, R.N. Shelton, T. Tsukada, M. Hozawa and N. Imaishi,
J. Downey and D.J. Lam, Preparation Numerical study on Czochralski growth
and magnetic measurements of single of oxide single crystals 109 (1991) 94
crystal T1,Ba,CaCu,O, 109 (19914)3 6 Olson, J.M., see Kibbler 109 (19912)5 8
Logan, R.A., see Zilko 109 (19912)6 4 Overbye, V., see Rajendran 109 (1991) 82
Loiacono, G.M., see Morris 109 (19913)6 7 Ozawa, T., Y. Hayakawa and M. Kumagawa,
Long, J.A., see Zilko 109 (19912)6 4 Growth of III-V ternary and quaternary
Lopata, J., see Zilko 109 (19912)6 4 mixed crystals by the rotationary Bridg-
Lu, L., see Tissue 109 (19913)2 3 man method 109 (1991) 212
Lu, L., see Jia 109 (19913)2 9
Lux-Steiner, M., see Baumgartner 109 (19913)1 8 Patillon, J.N., see André 109 (19912)9 2
Pearton, S.J., see Abernathy 109 (1991) 31
Ma., L., see Tissue 109 (1991) 323 Peercy, P.S., see Hoglund 109 (19911)0 7
Malhouroux, N., see André 109 (1991) 292 Peterson, S., see Wenzl 109 (1991) 191
Manente, R.A., see Melcher 109 (1991) 37 Peterson, C.A., see Melcher 109 (1991) 37
Marshall, H.D., Increased single crystal
length in low-pressure, LEC gallium Qadri, S.B., see Henry 109 (19912)2 8
arsenide 109 (1991) 218
Mateika, D., H. Kohler, H. Laudan and E. Rajendran, S., C.C. Chao, D.P. Hill, J.P.
Vélkel, Mixed-perovskite substrates for Kalejs and V. Overbye, Magnetic and
high-T, superconductors 109 (19914)4 7 thermal field model of EFG system 109 (1991) 82
Matsumoto, K. and K. Noda, Vapor-phase Reihlen, E.H., see Cao 109 (19912)7 9
growth of ZnO crystals by chemical trans- Ren, F., see Abernathy 109 (1991) 31
port and effect of metal doping 109 (1991) 309 Reyer-Gasga, J., see Lara 109 (1991) 137
Author index
Riahi, D.N., see Lie 109 (1991) 167 operating during the growth of TiO,—al-
Rice, J.P. and D.M. Ginsberg, A method for loy crystals from the melt 109 (1991) 120
producing untwinned YBa,Cu,07_; Tiller, W.A., see Yen 109 (1991) 142
crystals without subjecting them to stress 109 (1991) 432 Timmons, M.L., see Johnson 109 (1991) 24
Riveros, H.G., see Lara 109 (1991) 137 Tindall, C.S., see Crouse 109 (1991) 162
Rosch, W. and F. Carlson, Computed stress Tissue, B.M., L. Lu, L. Ma, W. Jia, M.L.
fields in GaAs during vertical Bridgman Norton and W.M. Yen, Laser-heated
growth 109 (1991) 75 pedestal growth of laser and IR-upcon-
Rosenberger, F., see Xiao 109 (1991) 43 verting materials 109 (1991) 323
Roth, M., see Hermon 109 (1991) 376 Tissue, B.M., see Jia 109 (1991) 329
Toyota, N., see Saito 109 (1991) 426
SaitoS,a saYk.,i T.a nSdh ishT.i do,F ukNu.d aT,o yotCar,y stKa.l Ukgerio,w tTh. TTssauok,a daJ.,Y .,T .,se es eeH oOgklaunnod 110099 ((11999911)) 10974
and properties of R,Ba,CuPtO, (R = Ho,
Er, Y), R,Ba,Cu,PtO;9 and Ba,CuPt,0, 109 (1991) 426 Uhrin, R., see Belt 109 (1991) 340
Sasaki, T., see Saito 109 (1991) 426 Ukei, K., see Saito 109 (1991) 426
Schieber, M., see Hermon 109 (1991) 376 Utsu, T. and S. Akiyama, Growth and appli-
Schieber, M., Deposition of high temperature cations of Gd,SiO, : Ce scintillators 109 (1991) 385
superconducting films by physical and
chemical methods 109 (1991) 401 Valentino, A.J., see Berkstresser 109 (1991) 457
Schiller, C., see André 109 (1991) 292 Valentino, A.J., see Berkstresser 109 (1991) 467
Schuyler, T., see Wang 109 (1991) 155 Van Haren, D.L., see Zilko 109 (1991) 264
Schweitzer, J.R., see Melcher 109 (1991) 37 Vaterlaus, A., see Baumgartner 109 (1991) 318
Segner, B.P., see Zilko 109 (1991) 264 Venturini, E.L., C.P. Tigges, R.J. Baughman,
Seidensticker, R.G., see Barrett 109 (1991) 17 B. Morosin, J.C. Barbour, M.A. Mitchell
Sekhar, J.A., Evolution of solidification mi- and D.S. Ginley, Stoichiometry and
crostructures at high interface growth irradiation effects in melt grown Tl—Ca-—
rates 109 (1991) 113 Ba—Cu-O single crystals 109 (1991) 441
Shamir, J., see Hermon 109 (1991) 376 Vlaeminck, O., see André 109 (1991) 292
Shelton, R.N., see Liu 109 (1991) 436 Vélkel, E., see Mateika 109 (1991) 447
109 (1991) 88
Sher, A., see Krishnamurthy
Shishido, T., see Saito 109 (1991) 426 Walker, J.S., see Lie 109 (1991) 167
109 (1991) 304
Silberman, E., see Burger Wang, T.H., T.F. Ciszek and T. Schuyler,
109 (1991) 12
Smith, C.D., see DeLucas Charge carrier recombination centers in
109 (1991) 12
Snyder, R.S., see DeLucas high-purity, dislocation-free, float-zoned
109 (1991) 107
Stiffler, S.R., see Hoglund silicon due to growth-induced microde-
Stringfellow, G.B., see Cao 109 (1991) 279 fects 109 (1991) 155
109 (1991) 285
Stringfellow, G.B., see Wang Wang, T.Y., A.W. Kimball, G.S. Chen, D.
Su, C.H., S.L. Lehoczky and F.R. Szofran, Birkedal and G.B. Stringfellow, GalnP/
Directional solidification of HgCdTe and AlGalInP strained quantum wells grown
109 (1991) 392
HgZnTe in a transverse magnetic field using atmospheric pressure organome-
109 (1991) 181 109 (1991) 285
Sukegawa, T., see Kimura tallic vapor phase epitaxy
Sukegawa, T., K. Yamashita, H. Katsuno, M. Wenzl, H., A. Dahlem, A. Fattah, S. Peter-
Kimura and A. Tanaka, Growth of a GeSi sen, K. Mika and D. Henkel, Phase rela-
109 (1991) 191
thick alloy layer on a Si substrate by tions in GaAs crystal growth
109 (1991) 186 109 (1991) 234
liquid phase epitaxy Werthen, J.G., see Bertness
109 (1991) 392 109 (1991) 127
Szofran, F.R., see Su Woodell, G.A., see Knuteson
Takano, N., see Okano 109 (1991) 94 Xiao, R.F., J.1.D. Alexander and F. Rosen-
Tamura, S., see Yokota 109 (1991) 298 berger, Simulation of surface morpholo-
Tanaka, A., see Kimura 109 (1991) 181 gies in crystal growth from the vapor 109 (1991) 43
109 (1991) 186
Tanaka, A., see Sukegawa
Thewalt, M.L.W., see Crouse 109 (1991) 162 Yacaman, M.J., see Lara 109 (1991) 137
Thompson, M.O., see Hoglund 109 (1991) 107 Yamashita, K., see Sukegawa 109 (1991) 186
Tigges, C.P., see Venturini 109 (1991) 441 Yen, C.T., see Tiller 109 (1991) 120
Tiller, W.A. and C.T. Yen, Some conse- Yen, C.T. and W.A. Tiller, Oxygen partition-
quences of a strong interface field-effect ing analysis during Czochralski silicon
476 Author index
crystal growth via a dopant marker and a Zilko, J.L., B.P. Segner, U.K. Chakrabarti,
simple transfer function modeling tech- R.A. Logan, J. Lopata, D.L. Van Haren,
109 (1991) 142
nique. I. Rotation rate transients J.A. Long and V.R. McCrary, Effect of
109 (1991) 323
Yen, W.M., see Tissue mesa shape on the planarity of InP re-
Yen, W.M., see Jia 109 (1991) 329 growths performed by atmospheric pres-
Yokota, K., S. Tamura, T. Nakajima and S. sure and low pressue selective metalor-
Katayama, Low temperature deposition ganic vapor phase epitaxy 109 (1991) 264
of single crystalline ZnSe films on GaAs
substrates by slightly ionized molecular
beams 109 (1991) 298
Journal of Crystal Growth 109 (1991) 477-479
North-Holland
Subject index
Alloys 107, 137 — silicon oxide 345
Aluminum — sulphide 133
— copper cobalt alloy 137
— gallium arsenide 31, 234
Cadmium
— gallium arsenide 31, 234
— mercury telluride 392
— gallium ag — 285 ~ silicide diarsenide 318
Phen on — sulphide 304
y — telluride 88
— organic 272 — tungstate 37
— selenide 133 :
Calcium
pparatus — fluoride 37
— for melt growth Cellul th 107, 113
by Bridgman—Stockbarger method pavers _
— using horizontal mode — fluoride 37
— — of gallium arsenide 205 ~ iodide 37
= —_ magnetic eo —— Characterization methods
— — Sy Coe Sees — by atomic absorption spectrometry 329, 361, 376
— using rotationary mode — by density 334
‘ —— rit ie <img 212 — by electrical methods 31, 133, 155, 228, 258, 272, 292, 318,
y Czochralski metho 361, 367, 426, 441, 447
- = promo a by electron beam induced current 155
p of rare ao ga woe by electron diffraction 272, 279
y zone melting metho by electron microscopy 137, 155, 174, 252, 264, 272, 285,
— using vertical mode 292, 314, 385
— — of gallium arsenide 228 by aantndtian 323, 329, 361
for thin film growth by infrared spectroscopy 162, 304, 340, 392
— by molecular beam epitaxy by laser velocimetry 24
pa sea apes en a" by magnetic properties 418, 426, 436, 441
; esa by mass spectrometry 246
— — of germanium silicide 186 by optical microscopy 174, 186, 212, 252, 272, 279, 432, 436
for vapor ge owe ; by optical properties 37
~ by erqpenaiion and contiasation by photoluminescence 162, 279, 285, 292, 304, 318
-- ofs ilicon carbide 7 by Raman spectroscopy 376
—— oe pyrolysis by reflectance 258, 304
at - magnesium oxide 314 by reflection high energy electron diffraction 298
for miscellaneous eee by Rutherford back scattering 31
— — edge defined film fed furnace 82 by secondary ion mass spectrometry 31
- — spherical mirror furnace 137 by X-ray photoemission spectroscopy 353
by X-ray methods 12, 155, 162, 186, 228, 258, 272, 285, 292,
314, 318, 340, 392, 426, 441, 447, 457, 467
Barium
Computer simulation 66, 82, 149, 167, 205, 241
— copper platinum oxide 426
Constitutional supercooling 107, 113, 120, 212
— fluoride 37
Convection 24, 50, 66, 94, 127, 142, 149, 167, 181, 186, 205,
— titanate 345
212, 234, 241
Biphenyl 99
Bismuth
— calcium strontium cuprate 401, 418 Dendritic growth 43, 113
— germanate 37 Devices 31, 37, 279, 353
478 Subject index
Diffusional control 50, 66, 246 Melt growth technique
Dislocations 43, 75, 228, 252, 272 — of aluminum copper cobalt alloy 137
Dissolution 181, 186 — by Bridgman-Stockbarger method
Distribution coefficient 50, 99, 107, 142, 224, 361, 367, 447 — — of gallium arsenide 75, 205
Dopants 107, 162, 224, 228, 234, 258, 309, 318, 323, 361, 367 of germanium 50
of mercury cadmium telluride 392
Ecology 1 of mercury zinc telluride 392
Erbium of III-V compounds 212
— barium cuprate 418 — — of tin 127
Etching — by Czochralski method
— chemical 155, 162, 228, 252, 258, 264, 285, 318 — — of antimony selenide 133
Eutectic growth 120, 174 of bismuth sulphide 133
of gadolinium silicate 385
Finite element method 94 of gallium arsenide 218, 224
Finite difference method 241 of lanthanum gallate 467
Forsterite 329 of lithium calcium aluminum fluoride 340
of oxides 94
Gadolinium of perovskites 447
— silicate 37, 385 of rare earth gallates 457
Gallium of silicon 142, 149
arsenide 31, 66, 75, 88, 191, 205, 218, 224, 234, 241, 258 — — theory of 149
arsenide phosphide 252 — by edge defined film fed growth
indium arsenide antimonide 212 — — of silicon 174
indium arsenide phosphide 292 — — simulation of 82
indium phosphide 279, 285 ~ by floating zone method
organic 31, 234, 241, 252, 258, 279, 285, 292 - — of cadmium selenide 304
Germanium 50 — — of silicon 155, 162, 167
— silicide 186 — by laser heated pedestal growth
— — of magnesium silicate 329
Heat flow control 50, 66, 82, 113, 149, 205, 218, 467 ~ — of sodium lanthanum tungstate 323
Heterojunction 31, 285 — — of titanium dioxide 120
Hydrodynamics 24, 167, 181, 234 — — of yttrium oxide 323
— by uniaxial solidification
Impurity 31, 120, 133, 142, 162, 174, 224, 298 - — of gallium arsenide 66
Indium — — of germanium 50
— antimonide 272 -—- theory of 113
— bismuth antimonide 212 — by zone melting —
— organic 258, 272, 285, 292 — — of gallium arsenide 228
— phosphide 258, 264, 292 — — theory of 334
Interface 107, 113, 120, 174, 205, 218, 228, 298, 392 Mercury
— cadmium telluride 392
Kinaties — (Il) iodide 376
— of growth 17, 43, 107, 113, 186, 234, 241, 279, 298, 390 Z a 88
— of interface control 43, 107, 113 ~ zinc telluride 392
Microgravity 12
— of nucleation 43
Monte Carlo method 43
Morphological stability 43, 107, 113
Lanthanum
Morphology of growth 17, 43, 99, 212, 264, 279, 309, 436
— aluminate 467
Lattice mismatch 279, 285
Lithium Nonlinear optics 345, 353
— calcium aluminum fluoride 334, 340 Nucleation 88
Numbers
Magnesium — Grashof 66, 181, 234
— organic 314 — Hartmann 167
— oxide 314 — Peclet 167
— silicate 329 — Prandtl 66, 127
Mathematical model 75, 181 — Rayleigh 50, 66, 127
Subject index
— Reynolds 24, 234 Thallium
— Schmidt 66 — barium calcium cuprate 401, 436, 441
— Stefan 66 Thermodynamics 88, 120, 191, 401
Thin film growth
Organic crystals 12, 99 by liquid phase epitaxy
Oxides 94 — of germanium silicide 186
— of silicon 181
Perfection of crystals 37, 75, 155, 162, 205, 298, 367, 376, 385, — of silicon tin alloy 107
432, 441, 447, 457 by molecular beam epitaxy
Perovskites 447 of aluminum gallium arsenide 31
Phase diagrams 88, 113, 120, 174, 191, 401, 418 of gallium arsenide 31
Phenomenological theory 107, 120, 142, 181 of superconductors 401
Photovoltaics 1 of zinc selenide 298
Potassium theory of 88
— hydrogen tartrate 99 by vapor phase epitaxy
— titanyl arsenate 353 through evaporation and condensation
— titanyl phosphate 353, 361, 367 — of magnesium oxide 314
Precursor 31 through laser ablation
Proteins 12 — of superconductors 401
Purification of materials 304, 376 through metalorganic chemical vapor deposition
— of aluminum gallium arsenide 234
Quantum wells /size effects 285, 292 — of aluminum gallium indium phosphide 285
of gallium arsenide 234, 241, 258
Rare earth of gallium arsenide phosphide 252
— aluminum perovskites of gallium indium arsenide phosphide 292
— — substituted by alkaline earths and group VB elements 447
of gallium indium phosphide 279, 285
— barium copper platinum oxide 426 of indium antimonide 272
of indium phosphide 258, 264, 292
Scintillators 37, 385
of superconductors 401
Silicon 88, 142, 149, 155, 167, 174, 181 hydrodynamics of 22
— carbide 17
manyfold switching effects on growth 246
— tin alloy 107
through spray pyrolysis
Sodium
— — of superconductors 401
— iodide 37
— through sputtering
— lanthanum tungstate 323
— — — of superconductors 401
Solar cells 234
Three—five (III-V) compounds 212
Solution growth technique Tin 127
— by flux method
Titanium
of germanium silicide 186 — dioxide 120
of potassium titanyl phosphate 361, 367
Twinning 432, 447, 457, 467
of rare earth barium copper platinum oxide 426
of silicon 181 Uniformity of growth 212, 292, 392
— — of superconductors 418, 432, 435, 441 Vapor growth technique
— theory of 99 — by chemical transport
Stefan problem or moving boundary problem 50, 66, 113 — — of cadmium silicon diarsenide 318
Strain 75, 252, 285 — — of zinc oxide 309
Sucrose 99 — by evaporation and condensation
Superconductivity 401, 418, 432, 436, 441 — — of mercury (II) iodide 376
characterization 401, 441 — — of proteins 12
crystal chemistry 401, 441 — — of silicon carbide 17
high T, 401, 418, 432, 436, 441 — theory of 43
phase relationships 401, 418
Yttrium
stoichiometry 441
— barium cuprate 401, 418, 432
thin films 401
— oxide 323
Supercooling, supersaturation 113
Superlattices 292 Zinc
Surface energy, determination of 88 — organic 234, 258
Surface processes 88, 99, 113 — oxide 309