Journal of Crystal Growth 1991: Vol 108 Index

11 Pages·1991·2.1 MB·English

Journal of Crystal Growth 108 (1991) 834-839
North-Holland
Author index
Abernathy, C.R., S.J. Pearton and N.T. Ha,
Sn doping of GaAs and AiGaAs grown Bernussi, A.A., F. likawa, P. Motisuke and P.
by metalorganic molecular beam epitaxy 108 (19918)2 7 Basmaji, Properties of Al,Ga,_,As with
108 (19914)5 5
Ackermann, D.K., see Brown an AlAs buffer layer on Si substrates
108 (19914)2 1
Akaishi, M., see Kanda grown by metalorganic vapor phase epi-
Allen, S.J., see Bhat 108 (19914)4 1 taxy 108 (1991) 615
Ananth, R. and W.N. Gill, Self-consistent Bhat, R., M.A. Koza, K. Kash, S.J. Allen,
theory of dendritic growth with convec- W.P. Hong, S.A. Schwarz, G.K. Chang
108 (19911)7 3
tion and P. Lin, Growth of high quality AlInAs
Aoki, Y., S. Hayashi and H. Komatsu, The by low pressure organometallic chemical
effect of magnetic field on crystallization vapor deposition for high speed and
of y-phase alloy in the Cu-Zn system 108 (19911)2 1 optoelectronic device applications 108 (19914)4 1
108 (19915)3 4
Armitage, D.N., N.I. Dunhill, R.H. West and Bhattacharya, S., see Ghosh
J.9. Williams, The thermal decomposition Bischopink, G. and K.W. Benz, Growth of
ot copper(II) hexafluoroacetylacetonate Al,Ga,_,Sb bulk material from metallic
uns MOCVD conditions 108 (1991) 683 solution 108 (1991) 465
Ashby, S., see Sun 108 (1991) 473 Blackmore, G., see Astles 108 (1991) 549
Astles, M.G., G. Blackmore, O.D. Dosser, H. Bohling, D.A., see Jones 108 (1991) 439
Hill, M. Lyster, G.R. Booker and M. Hill, Bohm, J., see Reiche 108 (1991) 759
Interface abruptness in LPE grown Booker, G.R., see Astles 108 (1991) 549
(CdHg)Te layers on CdTe substrate 108 (19915)4 9 Bornside, D.E., T.A. Kinney and R.A. Brown,
Aubry, A., see Skoulika 108 (19912)8 5 Minimization of thermoelastic stresses in
Czochralski grown silicon: application of
Bacon, D.J., see Meduoye 108 (19916)2 7 the integrated system model 108 (1991) 779
Balk, P., see Glade 108 (19914)4 9 Bosenberg, W.R., R.J. Lane and C.L. Tang,
Barilo, S.N., A.P. Ges, S.A. Guretskii, D.I. Growth of large, high-quality beta-barium
Zhigunov, A.A. Ignatenko, A.M. Luginets metaborate crystals 108 (19913)9 4
and E.F. Shapovalova, Seeded growth of Béttner, H., see Lambrecht 108 (19913)0 1
rare-earth orthoferrites from B,O,-BaF,— Bouillet, C., see Lefebvre 108 (19916)5 5
BaO solvent. I. Study of conditions and Brown, C.M., D.K. Ackermann, D.L. Purich
physico-chemical crystallization parame- and B. Finlayson, Nucleation of calcium
ters 108 (1991) 309 oxalate monohydrate; use of turbidity
Barilo, S.N., A.P. Ges, S.A. Guretskii, D.I. measurements and computer-assisted sim-
Zhiganov, A.A. Ignatenko, A.N. Igument- ulations in characterizing early events in
sev, I.D. Lomako and A.M. Luginets, crystal formation 108 (19914)5 5
Seeded growth of rare-earth orthoferrites Brown, R.A., see Maroudas 108 (19913)9 9
from B,O,—BaF,-BaO solvent. II. Growth Brown, R.A., see Bornside 108 (19917)7 9
of high-quality RFeO, single crystals 108 (19913)1 4 Brown, W.E., see Eidelman 108 (19913)8 5
Basmaji, P., see Bernussi 108 (19916)1 5 Brown, W.E., see Tomazic 108 (19916)7 0
Ben-Jacob, E., see Raz 108 (19916)3 7 Buhl, J.-Ch., Hydrothermal synthesis and
Bennema, P., see Vogels 108 (19917)3 3 characterization of nitride sodalite single
108 (19918)2 1
Bennema, P., see Wang crystals 108 (1991) 143
108 (19914)6 5
Benz, K.W., see Bischopink
Berkowski, M., see Iliev 108 (19912)1 9 Carlson, D.J. and A.F. Witt, Microsegrega-
Berkowski, M., K. Iliev, V. Nikolov, P. Peshev tion in conventional Si-doped LEC GaAs 108 (1991) 508
and W. Piekarczyk, Conditions of mainte- Chan, H.-K. and I. Gonda, Studies of the
nance of a flat crystal /melt interface dur- mechanism of crystal growth of hexa-
ing Czochralski growth of bismuth germa- methylmelamine. II. Rates of growth of
nium oxide single crystals 108 (1991) 225 the crystal faces 108 (1991) 751
Journal of Crystal Growth 108 (1991) 834-839
North-Holland
Author index
Abernathy, C.R., S.J. Pearton and N.T. Ha,
Sn doping of GaAs and AiGaAs grown Bernussi, A.A., F. likawa, P. Motisuke and P.
by metalorganic molecular beam epitaxy 108 (19918)2 7 Basmaji, Properties of Al,Ga,_,As with
108 (19914)5 5
Ackermann, D.K., see Brown an AlAs buffer layer on Si substrates
108 (19914)2 1
Akaishi, M., see Kanda grown by metalorganic vapor phase epi-
Allen, S.J., see Bhat 108 (19914)4 1 taxy 108 (1991) 615
Ananth, R. and W.N. Gill, Self-consistent Bhat, R., M.A. Koza, K. Kash, S.J. Allen,
theory of dendritic growth with convec- W.P. Hong, S.A. Schwarz, G.K. Chang
108 (19911)7 3
tion and P. Lin, Growth of high quality AlInAs
Aoki, Y., S. Hayashi and H. Komatsu, The by low pressure organometallic chemical
effect of magnetic field on crystallization vapor deposition for high speed and
of y-phase alloy in the Cu-Zn system 108 (19911)2 1 optoelectronic device applications 108 (19914)4 1
108 (19915)3 4
Armitage, D.N., N.I. Dunhill, R.H. West and Bhattacharya, S., see Ghosh
J.9. Williams, The thermal decomposition Bischopink, G. and K.W. Benz, Growth of
ot copper(II) hexafluoroacetylacetonate Al,Ga,_,Sb bulk material from metallic
uns MOCVD conditions 108 (1991) 683 solution 108 (1991) 465
Ashby, S., see Sun 108 (1991) 473 Blackmore, G., see Astles 108 (1991) 549
Astles, M.G., G. Blackmore, O.D. Dosser, H. Bohling, D.A., see Jones 108 (1991) 439
Hill, M. Lyster, G.R. Booker and M. Hill, Bohm, J., see Reiche 108 (1991) 759
Interface abruptness in LPE grown Booker, G.R., see Astles 108 (1991) 549
(CdHg)Te layers on CdTe substrate 108 (19915)4 9 Bornside, D.E., T.A. Kinney and R.A. Brown,
Aubry, A., see Skoulika 108 (19912)8 5 Minimization of thermoelastic stresses in
Czochralski grown silicon: application of
Bacon, D.J., see Meduoye 108 (19916)2 7 the integrated system model 108 (1991) 779
Balk, P., see Glade 108 (19914)4 9 Bosenberg, W.R., R.J. Lane and C.L. Tang,
Barilo, S.N., A.P. Ges, S.A. Guretskii, D.I. Growth of large, high-quality beta-barium
Zhigunov, A.A. Ignatenko, A.M. Luginets metaborate crystals 108 (19913)9 4
and E.F. Shapovalova, Seeded growth of Béttner, H., see Lambrecht 108 (19913)0 1
rare-earth orthoferrites from B,O,-BaF,— Bouillet, C., see Lefebvre 108 (19916)5 5
BaO solvent. I. Study of conditions and Brown, C.M., D.K. Ackermann, D.L. Purich
physico-chemical crystallization parame- and B. Finlayson, Nucleation of calcium
ters 108 (1991) 309 oxalate monohydrate; use of turbidity
Barilo, S.N., A.P. Ges, S.A. Guretskii, D.I. measurements and computer-assisted sim-
Zhiganov, A.A. Ignatenko, A.N. Igument- ulations in characterizing early events in
sev, I.D. Lomako and A.M. Luginets, crystal formation 108 (19914)5 5
Seeded growth of rare-earth orthoferrites Brown, R.A., see Maroudas 108 (19913)9 9
from B,O,—BaF,-BaO solvent. II. Growth Brown, R.A., see Bornside 108 (19917)7 9
of high-quality RFeO, single crystals 108 (19913)1 4 Brown, W.E., see Eidelman 108 (19913)8 5
Basmaji, P., see Bernussi 108 (19916)1 5 Brown, W.E., see Tomazic 108 (19916)7 0
Ben-Jacob, E., see Raz 108 (19916)3 7 Buhl, J.-Ch., Hydrothermal synthesis and
Bennema, P., see Vogels 108 (19917)3 3 characterization of nitride sodalite single
108 (19918)2 1
Bennema, P., see Wang crystals 108 (1991) 143
108 (19914)6 5
Benz, K.W., see Bischopink
Berkowski, M., see Iliev 108 (19912)1 9 Carlson, D.J. and A.F. Witt, Microsegrega-
Berkowski, M., K. Iliev, V. Nikolov, P. Peshev tion in conventional Si-doped LEC GaAs 108 (1991) 508
and W. Piekarczyk, Conditions of mainte- Chan, H.-K. and I. Gonda, Studies of the
nance of a flat crystal /melt interface dur- mechanism of crystal growth of hexa-
ing Czochralski growth of bismuth germa- methylmelamine. II. Rates of growth of
nium oxide single crystals 108 (1991) 225 the crystal faces 108 (1991) 751
Author index 835
Chang, G.K., see Bhat 108 (1991) 441 Gatica, J.E., see Scholtz 108 (1991) 190
Chaudhuri, S., see Ghosh 108 (1991) 534 Ges, A.P., see Barilo 108 (1991) 309
Chen, M.-H., see Shyy 108 (1991) 247 Ges, A.P., see Barilo 108 (1991) 314
Chen, W.H., see Hu 108 (1991) 561 Ghandi, S.K., see Chinoy 108 (1991) 105
Chinoy, P.B. and S.K. Ghandhi, Design con- Ghosh, S., A. Sarkar, S. Bhattacharya, S.
siderations for the elimination of recircu- Chaudhuri and A.K. Pal, Microstructure
lation in horizontal epitaxial reactors 108 (1991) 105 of ZnO films produced by reactive DC
Choe, K.S., J.A. Stefani, T.B. Dettling, J.K. sputtering technique 108 (1991) 534
Tien and J.P. Wallace, Effects of growth Giling, L.J., see Gardeniers 108 (1991) 319
conditions on thermal profiles during Gill, W.N., see Ananth 108 (1991) 173
Czochralski silicon crystal growth 108 (1991) 262 Glade, M., J. Hergeth, D. Griitzmacher, K.
Chvoj, Z., see Yuferev 108 (1991) 367 Masseli and P. Balk, Diffusion of Zn
Cockayne, B., see Wright 108 (1991) 525 acceptors during MOVPE of InP 108 (1991) 449
Coméra, J., see Thevenard 108 (1991) 572 Gonda I., see Chan 108 (1991) 751
Czekalski, T., see Kowalski 108 (1991) 744 Goto, Y., A. Hayashi, Y. Kimura and M.
Nakayama, Second harmonic generation
Deng Peizhen, see Zhang 108 (1991) 377 and crystal growth of substituted thienyl
108 (1991) 688
Deparis, C. and J. Massies, Surface stoichi- chalcone
108 (1991) 41
ometry variation associated with GaAs Grabmaier, J.G., see Miihlbauer
(001) reconstruction transitions 108 (1991) 157 Grant, M.L. and D.A. Saville, The role of
Dettling, T.B., see Choe 108 (1991) 262 transport phenomena in protein crystal
Di Persio, J., see Lefebvre 108 (1991) 655 growth 108 (1991) 8
Diers, V., see Miihlbauer 108 (1991) 41 Gruehn, R., see Hussain 108 (1991) 831
108 (1991) 449
Dilawari, A.H. and J. Szekely, A mathemati- Griitzmacher, D., see Glade
108 (1991) 309
cal representation of a modified stagna- Guretskii, S.A., see Barilo
108 (1991) 314
tion flow reactor for MOCVD applica- Guretskii, S.A., see Barilo
tions 108 (1991) 491
Djinovié, Z., Z. Djurié, Z. Jaksi¢é, F. Kermendi Ha, N.T., see Abernathy 108 (1991) 827
and R. Rokni¢é, Isothermal vapor phase Hamabe, T., see Kitano 108 (1991) 277
epitaxy of (Hg,Cd)Te from Te-rich Harold, M., see Jones 108 (1991) 73
DjurHi¢g,, Z_.,,T es,e e sDojuirncoev i¢é 110088 ((11999911)) 771100 HHaarrtteml,a n,R .WP..,, sseeee HLeiiajnnge n 110088 ((11999911)) 219209
Dormans, G.J.M., OMCVD of transition Hayashi, A., see Goto 108 (1991) 688
metals and their silicides using metallo- Hayashi, S., see Aoki 108 (1991) 121
cenes and (di)silane or silicon tetra- 108 (1991) 806 Heijnen, W.M.M. and P. Hartman, Structural
bromide 108 (1991) 549 morphology of gypsum (CaSO, -2H,0),
Dosser, O.D., see Astles 108 (1991) 683 brushite (CaHPO,-2H,O) and _phar-
Dunhill, N.I., see Armitage macolite (CaHAsO, - 2H,O) 108 (1991) 290
Henry, C.R. and B. Mutaftschiev, Transient
Eidelman, N., W.E. Brown and J.L. Meyer, growth and evaporation kinetics of a sin-
The effect of pyrophosphate concentra- gular face containing linear sinks: time
tions on calcium phosphate growth on dependent BCF theory 108 (1991) 603
108 (1991) 655
well-crystallized octacalcium phosphate Herbeaux, C., see Lefebvre
and hydroxyapatite seed crystals 108 (1991) 385 Hergeth, J., see Glade 108 (1991) 449
Elwenspoek, M.C., see Vogels 108 (1991) 733 Hermoneit, B., see Reiche 108 (1991) 759
Evans, K.E., see Meduoye 108 (1991) 627 Herres, N., see Lambrecht 108 (1991) 301
Evers, J., see Lambrecht 108 (1991) 301 Hesse, H., see Varnhorst 108 (1991) 429
108 (1991) 719
Hezemans. A.M.F., see Van der Sluis
108 (1991) 549
Favier, J.J., see Thevenard 108 (1991) 572 Hill, H., see Astles 108 (1991) 549
Fernandez-Diaz, L., see Prieto 108 (1991) 770 Hill, M., see Astles 108 (1991) 190
Finlayson, B., see Brown 108 (1991) 455 Hlavacek, V., see Scholtz 108 (1991) 441
Hong, W.P., see Bhat
108 (1991) 733
Hottenhuis, M.H.J., see Vogels
108 (1991) 377
Gan Fuxi, see Zhang Hu, H.C., W.H. Chen and T.Y. Lee, Synthe-
Gardeniers, J.G.E., C.H. Klein Douwel and sis kinetics and particle size distribution
L.J. Giling, Reduced pressure silicon CVD of zeolite A 108 (1991) 561
on hemispherical substrates 108 (1991) 319 Hunter, B., see Sun 108 (1991) 473
836 Author index
Hussain, A. and R. Gruehn, Crystal growth Kimura, M., see Sukegawa 108 (1991) 598
of hexagonal potassium tungsten bronze Kimura, Y., see Goto 108 (1991) 688
by chemical transport 108 (1991) 831 Kinney, T.A., see Bornside 108 (1991) 779
Kitano, M., T. Hamabe, S. Maeda and T.
Ignatenko, A.A., see Barilo 108 (19913)0 9 Okabe, Growth of large tetrapod-like ZnO
Ignatenko, A.A., see Barilo 108 (19913)1 4 crystals. II. Morphological considerations
Igumentsev, A.N., see Barilo 108 (19913)1 4 on growth mechanism 108 (19912)7 7
likawa, F., see Bernussi 108 (19916)1 5 Klein Douwel, C.H., see Gardeniers 108 (19913)1 9
108 (19912)0 3
Iliev, K., M. Berkowski, V. Nikolov, P. Peshev Knightley, P., see Moseley
and W. Piekarczyk, Conditions of ex- Kobayashi, N., Oxygen transport under an
istence and character of the temperature axial magnetic field in Czochralski silicon
108 (19912)4 0
fluctuations during Czochralski growth of growth
108 (19917)2 8
oxide single crystals 108 (1991) 219 Kokubun, Y., see Nishikawa
108 (19913)6 7
Tliev, K., see Berkowski 108 (1991) 225 Kolesnikova, E.N., see Yuferev
108 (19911)2 1
Ishikawa, M., see Nishikawa 108 (1991) 728 Komatsu, H., see Aoki
Ishitani, A., see Oshita 108 (1991) 499 Komatsu, S. and Y. Moriyoshi, Growth forms
Ishizawa, Y., see Otani 108 (1991) 425 of B-rhombohedral boron whiskers and
Itoh, H., T. Nakamura, H. Iwahara and H. platelets prepared in a low-pressure B,H,
Sakamato, Observations of growth pro- + He plasma in terms of periodic bond
cess of chemically vapor deposited di- chain method 108 (1991) 63
amond single crystal 108 (19916)4 7 Komatsu, S., see Okada 108 (19914)1 6
Ivanov, S.V., P.S. Kop’ev and N.N. Ledent- Kondo, N., see Yamamoto 108 (19914)3 3
sov, Interplay of beryllium segregation Kop’ev, P.S., see Ivanov 108 (19916)6 1
and diffusion in heavily doped GaAs and Kou, S., see Lan 108 (1991) 1
AlGaAs grown by molecular beam epi- Kou, S., see Lan 108 (19913)4 0
taxy (thermodynamic analysis) 108 (1991) 661 Kou, S., see Lan 108 (19913)5 1
Iwahara, H., see Itoh 108 (1991) 647 Kou, S., see Lan 108 (19915)4 1
Kowalski, G., E. Zielinska-Rohozinska and
108 (19917)1 0 T. Czekalski, X-ray characterization of
Jaksi¢, Z., see Djinovic 108 (1991) 744
Jayarama Reddy, P., see Ramakrishna Reddy 108 (19917)6 5 defect structure in LEC GaAs crystals 108 (19914)4 1
Koza, M.A., see Bhat
Jones, A.C., S.A. Rushworth, D.A. Bohling 108 (19917)1 9
Kroon, J., see Van der Sluis
and G.T. Muhr, Growth of Al ,Ga,_ As 108 (19913)0 1
Kuhn, S., see Lambrecht
by reduced pressure MOVPE using tri-
108 (19914)3 9 Kuriyama, K., T. Katoh and N. Mineo,
methylamine alane (E)
Jones, A.C., see Wright 108 (19915)2 5 Crystal growth and characterization of the
filled tetrahedral semiconductor LiZnP 108 (1991) 37
Jones, S.H., L.K. Seidel, K.M. Lau and M.
Harold, Patterned substrate epitaxy sur-
108 (1991) 73
face shapes Lambrecht, A., N. Herres, B. Spanger, S.
Juhasz, Z., Compensation of capillarity in Kuhn, H. Béttner, M. Tacke and J. Evers,
108 (19916)2 1
Gd,Ga;O,, growth Molecular beam epitaxy of Pb,_,Sr,Se
for the use in IR devices 108 (19913)0 1
Kabe, I., see Kaneko 108 (19913)3 5 Lan, C.W. and S. Kou, Floating-zone crystal
Kaminski, P., W. Strupifski and K. Rosz- growth with a heated ring covering the
kiewicz, Effect of substrate temperature melt surface 108 (1991) 1
on the concentration of point defects in Lan, C.W. and S. Kou, Floating-zone crystal
vapour phase epitaxial GaP: N,S 108 (1991) 699 growth with a heated and immersed
Kanda, H., M. Akaishi and S. Yamaoka, shaper — computer simulation 108 (1991) 340
Impurity distribution among vicinal slopes Lan, C.W. and S. Kou, Heat transfer, fluid
of growth spirals developing on the {111} flow and interface shapes in floating-zone
faces of synthetic diamonds 108 (1991) 421 crystal growth 108 (1991) 351
Kaneko, T., T. Okuno and I. Kabe, Effect of Lan, C.W. and S. Kou, Floating-zone crystal
surface composition on the growth rates growth with a heated and immersed
of silicon carbide by CVD 108 (19913)3 5 shaper — experiments 108 (1991) 541
Kash, K., see Bhat 108 (19914)4 1 Lane, R.J., see Bosenberg 108 (1991) 394
Katoh, T., see Kuriyama 108 (1991) 37 Lang, A.R. and G.M. Meaden, Complemen-
Kazmierski, C., see Robein 108 (19915)5 4 tary orientation-dependent distributions
108 (19917)1 0
Kermendi, F., see Djinovié of 1.40 and 2.56 eV cathodoluminescence
Author index 837
on vicinals on {111} in synthetic di- Moriyoshi, Y., see Okada 108 (1991) 416
amonds 108 (1991) 53 Moseley, A.J., J. Thompson, P. Knightley,
Larsen, C.A., see Li 108 (1991) 439 R.H. Wallis and D.J. Stirland, CODE: a
Lau, K.M., see Jones 108 (1991) 73 novel single step MOVPE technique for
Ledentsov, N.N., see Ivanov 108 (1991) 661 the fabrication of low-dimensional de-
Lee, T.Y., see Hu 108 (1991) 561 vices, quantum wires and quantum dots 108 (1991) 203
Lefebvre, A., C. Herbeaux, C. Bouillet and J. Motakef, S., A high temperature creep model
Di Persio, Characterization of planar for GaAs 108 (1991) 33
growth defects in slightly-mismatched In Motisuke, P., see Bernussi 108 (1991) 615
GaAs/InP heterostructures 108 (1991) 655 Mihlbauer, A., V. Diers, A. Walther and J.G.
Li, S.H., C.A. Larsen and G.B. Stringfellow, Grabmaier, Removal of C/SiC from
Decomposition mechanisms of trimethyl- liquid silicon by directional solidification 108 (1991) 41
arsine (E) 108 (19914)3 9 Muhr, G.T., see Jones 108 (1991) 439
Liang, B. and R.W. Hartel, Techniques for Mukhin, S.V., see Lingart 108 (1991) 233
developing nucleation and growth kinetics Mutaftschiev, B., see Henry 108 (1991) 603
from MSMPR data for sucrose crystalli-
zation in the presence of growth rate dis- Nakajima, K., see Takenaka 108 (19915)1 9
108 (19911)2 9
persion Nakajima, M., see Takamori 108 (1991) 99
Lin, P., see Bhat 108 (19914)4 1 Nakamura, T., see Itoh 108 (19916)4 7
Lingart, Yu.K., S.V. Mukhin and N.A. Nakayama, M., see Goto 108 (19916)8 8
Tikhonova, Mathematical modelling of Nango, N., see Lu 108 (19914)8 2
heat transfer in Stockbarger-type units for Nanishi, Y., see Yamamoto 108 (19914)3 3
ZnSe growth 108 (19912)3 3 Nikolov, V., see Iliev 108 (19912)1 9
Lipson, S.G., see Raz 108 (19916)3 7 Nikolov, V., see Berkowski 108 (19912)2 5
Liu Xiangyang, see Wang 108 (19918)2 1 Nishikawa, Y., H. Sugawara, M. Ishikawa
Lomako, I.D., see Barilo 108 (19913)1 4 and Y. Kokubun, Effects of V/III ratio
Loépez-Andrés, S., see Prieto 108 (19917)7 0 on Zn electrical activity in Zn-doped In
Lu Taijing, K. Toyoda, N. Nango and T. GaAIP grown by metalorganic chemical
Ogawa, Observation of microdefects and vapor deposition 108 (19917)2 8
microprecipitates in Si crystals by IR Nishio, J., Transport restriction effect for
scattering tomography 108 (1991) 482 gaseous components on the carbon con-
Luginets, A.M., see Barilo 108 (1991) 309 tent of LEC GaAs 108 (1991) 150
Luginets, A.M., see Barilo 108 (1991) 314
Lyster, M., see Astles 108 (1991) 549
Ogawa, T., see Lu 108 (1991) 482
Okabe, T., see Kitano 108 (1991) 277
Maeda, S., see Kitano 108 (1991) 277 Okada, K., S. Komatsu, S. Matsumoto and
Mannami, M., see Tsuji 108 (1991) 817 Y. Moriyoshi, Growth steps and etch pits
Maroudas, D. and R.A. Brown, On the pre- appearing on {100} planes of diamonds
diction of dislocation formation in semi- prepared by combustion-flame deposition
conductor crystals grown from the melt: method 108 (1991) 416
analysis of the Haasen model for plastic Okuno, T., see Kaneko 108 (1991) 335
deformation dynamics 108 (1991) 399 Oliver, P.E., see Wright 108 (1991) 525
Masseli, K., see Glade 108 (19914)4 9 Oshita, Y., A. Ishitani and T. Takada, Surface
Massies, J., see Deparis 108 (19911)5 7 reaction mechanism of SiCl, with carrier
Matsumoto, S., see Okada 108 (19914)1 6 gas H, in silicon vapor phase epitaxial
Matthews, D.N., see Sun 108 (19914)7 3 growth 108 (1991) 499
Mayer, I., see Tomazic 108 (19916)7 0 Otani, S., T. Tanaka and Y. Ishizawa, Pre-
Meaden, G.M., see Lang 108 (1991) 53 paration of (La,__,.Ce,)B, single crystals
Meduoye, G.O., D.J. Bacon and K.E. Evans, by the floating zone method 108 (1991) 425
Computer modelling of temperature and
108 (19915)3 4
stress distributions in LEC-grown GaAs Pal, A.K., see Ghosh
crystals 108 (19916)2 7 Parbrook, P.J., see Wright 108 (19915)2 5
Meyer, J.L., see Eidelman 108 (1991) 385 Pearton, S.J., see Abernathy 108 (19918)2 7
Michaelides, A., see Skoulika 108 (19912)8 5 Peshev, P., see Iliev 108 (19912)1 9
Mineo, N., see Kuriyama 108 (1991) 37 Peshev, P., see Berkowski 108 (19912)2 5
Mizuno, Y., see Tsuji 108 (19918)1 7 Piekarczyk, W., see Iliev 108 (19912)1 9
Moriyoshi, Y., see Komatsu 108 (1991) 63 Piekarczyk, W., see Berkowski 108 (19912)2 5
838 Author index
Piekarczyk, W. and W.A. Yarbrough, Appli- Skoulika, S., A. Michaelides and A. Aubry,
cation of thermodynamics to the ex- Habit modification of coordination com-
amination of the diamond CVD process. pounds in the presence of additives; a
II. A model of diamond deposition pro- study of the system Ni(f-ala),-2H,O-
cess from hydrocarbon—-hydrogen mix- glycine 108 (19912)8 5
tures 108 (1991) 583 Spanger, B., see Lambrecht 108 (19913)0 1
Polman, A., S. Roorda, P.A. Stolk and W.C. Stefani, J.A., see Choe 108 (19912)6 2
Sinke, Triggering explosive crystallization Stirland, D.J., see Moseley 108 (19912)0 3
of amorphous silicon 108 (19911)1 4 Stolk, P.A., see Polman 108 (19911)1 4
Pougnet, A.M., see Robein 108 (19915)5 4 Stringfellow, G.B., see Li 108 (19914)3 9
Prieto, M., L. Fernandez-Diaz and S. Lépez- Strupihski, W., see Kaminski 108 (19916)9 9
Andrés, Spatial and evolutionary aspects Sugawara, H., see Nishikawa 108 (19917)2 8
of nucleation in diffusing-reacting sys- Sukegawa, T., M. Kimura and A. Tanaka,
tems 108 (1991) 770 LPE growth of silicon by yo-yo solute
Purich, D.L., see Brown 108 (1991) 455 feeding method 108 (19915)9 8
Sun, B.N., K.N.R. Taylor, B. Hunter, D.N.
Ramakrishna Reddy, K.T. and P. Jayarama Matthews, S. Ashby and K. Sealey, Two
Reddy, Preparation and properties of laser classes of growth spirals on single crystals
Raz,pe evrEa.ip,oo drSia.ctG .e dm LoiCrpupshGooanlS oega,in de st hEi.n o Bbfesinel-rmJsv aecdo b,d uNrienwg 108 (1991) 765 SSzueskuoekfli y,Y, BYJ.C.,,O ss eeee TDsiuljaiw ari 111000888 (((111999999111484)))917 173
dendritic growth of ammonium chloride
crystals in thin layers 108 (1991) 637 Tacke, M., see Lambrecht 108 (19913)0 1
Reich, P., J. Bohm, B. Hermoneit, P. Rudolph, Takada, T., see Oshita 108 (19914)9 9
R. Schalge and D. Schultze, The effect of Takamori, A., T. Yokotsuka, K. Uchiyama
an electrical field on the growth of lithium and M. Nakajima, Ga,In,_,P/GaAs
niobate single crystals 108 (1991) 759 grown by gas source molecular beam epi-
Robein, D., C. Kazmierski, A.M. Pougnet taxy using phosphine 108 (1991) 99
and B. Rose, Iron incorporation in InP Takenaka, C. and K. Nakajima, Effect of
layers using a ferrocene source in atmo- electric current on the LPE growth of InP 108 (19915)1 9
spheric pressure MOVPE 108 (19915)5 4 Tanaka, A., see Sukegawa 108 (19915)9 8
Rokni¢, R., see Djinovi¢é 108 (19917)1 0 Tanaka, T., see Otani 108 (19914)2 5
Roorda, S., see Polman 108 (19911)1 4 Tang, C.L., see Bosenberg 108 (19913)9 4
Rose, B., see Robein 108 (1991) 554 Taylor, K.N.R., see Sun 108 (19914)7 3
Roszkiewicz, K., see Kamifski 108 (19916)9 9 Thevenard, D., A. Rouzaud, J. Coméra and
Rouzaud, A., see Thevenard 108 (19915)7 2 J.J. Favier, Influence of convective ther-
Rudolph, P., see Reiche 108 (19917)5 9 mal oscillations on a solidification inter-
Rushworth, S.A., see Jones 108 (19914)3 9 face in Bridgman growth 108 (19915)7 2
Thompson, J., see Moseley 108 (19912)0 3
108 (19916)4 7 Tien, J.K., see Choe 108 (19912)6 2
Sakamoto, H., see Itoh 108 (1991) 8 Tikhonova, N.A., see Lingart 108 (19912)3 3
Saville, D.A., see Grant
108 (19915)3 4 Tomazic, B.B., I. Mayer and W.E. Brown,
Sarkar, A., see Ghosh
108 (19917)5 9 Ion incorporation into octacalcium phos-
SScchhoalltgze,, JR..H,. ,s eJe. E.R eGiacthiec a, H.J. Viljoen and V. phate hydrolyzates 108 (19916)7 0
Hlavacek, Coating of fibrous substrates Toyoda, K., see Lu 108 (19914)8 2
108 (19911)9 0 Tsuji, M., Y. Mizuno, Y. Susuki and M.
by CVD; analysis of the fiber evolution
Schultze, D., see Reiche 108 (19917)5 9 Mannami, Misfit dislocations in epitaxial
SSecahlweayr,z ,K .,S .As.e,e sSeuen Bhat 110088 ((1199991144))74 31 bPiboSc/rySsntTales( 001) and PbTe/SnTe(001) 108 (1991) 817
Seidel, L.K., see Jones 108 (1991) 73
Shapovalova, E.F., see Barilo 108 (19913)0 9 Uchiyama, K., see Takamori 108 (1991) 99
Shirmer, O.F., see Varnhorst 108 (19914)2 9
Shyy, W. and M.-H. Chen, Interaction of Van der Sluis, P., A.M.F. Hezemans and J.
thermocapillary and natural convection Kroon, Computer knowledge base for
flows during solidification: normal and crystallization 108 (19917)1 9
reduced gravity conditions 108 (19912)4 7 Van Enckevort, W.J.P., see Wang 108 (19918)2 1
Sinke, W.C., see Polman 108 (19911)1 4 Van Rosmalen, G.M., see Witkamp 108 (1991) 89
Author index
Varnhorst, T., O.F. Shirmer and H. Hesse, Wright, P.J., B. Cockayne, P.J. Parbrook, P.E.
Blue coloration of KNbO, caused by Oliver and A.C. Jones, Control of prere-
scattering 108 (1991) 429 action in the metalorganic chemical
Vesenka, J.P. and Y. Yeh, Defect site nuclea- vapour deposition of zinc- and cadmium-
tion of microbubbles as a source of dy- based chalcogenides 108 (19915)2 5
namic light scattering at the growing ice—
108 (1991) 19
water interface Yamamoto, N., N. Kondo and Y. Nanishi,
108 (19911)9 0
Viljoen, H.J., see Scholtz Desorption process of Ga atoms from the
Vogels, L.J.P., P. Bennema, M.H.J. Hot- mask surface in selective area growth of
tenhuis and M.C. Elwenspoek, On the GaAs by electron-cyclotron-resonance
morphology of ammonium nitrate (III): plasma-excited molecular-beam epitaxy
theory and observation 108 (1991) 733 (ECR-MBE) 108 (19914)3 3
Yamaoka, S., see Kanda 108 (19914)2 1
Wallace, J.P., see Choe 108 (19912)6 2 Yarbrough, W.A., see Piekarczyk 108 (19915)8 3
Wallis, R.H., see Moseley 108 (19912)0 3 Ye Guifen, see Wang 108 (19918)2 1
Walther, A., see Miihlbauer 108 (1991) 41 Yeh, Y., see Vesenka 108 (1991) 19
Wang Yaoshui, Zheng Manna, P. Bennema, Yokotsuka, T., see Takamori 108 (1991) 99
Zhu Rui, Ye Guifen, Liu Xiangyang and Yuferev, V.S., Z. Chvoj and E.N. Koles-
W.J.P. van Enckevort, The occurrence of nikova, The effect of radiative heat trans-
scattering centres and dislocations in KDP fer on morphological stability during di-
crystals 108 (19918)2 1 rectional solidification of a binary melt 108 (1991) 367
108 (19916)8 3
West, R.H., see Armitage
108 (1991) 25
Westwood, D.I., see Woolf Zhang Qiang, Deng Peizhen and Gan Fuxi,
Williams, J.0., see Armitage 108 (19916)8 3 X-ray topographic observation of disloca-
Williams, R.H., see Woolf 108 (1991) 25 tion structure in sapphire single crystal
108 (19913)7 7
Witkamp, G.J. and G.M. van Rosmalen, grown by temperature gradient technique
108 (19918)2 1
Growth of gypsum. II. Incorporation of Zheng Manna, see Wang
cadmium 108 (1991) 89 Zhigunov, D.I., see Barilo 108 (19913)0 9
Witt, A.F., see Carlson 108 (1991) 508 Zhigunov, D.I., see Barilo 108 (1991) 314
108 (19918)2 1
Woolf, D.A., D.I. Westwood and R.H. Wil- Zhu Rui, see Wang
108 (1991) 744
liams, The molecular beam epitaxial Zielinska-Rohozinska, E., see Kowalski
growth of GaAs on Si(100): a variable
growth temperature study 108 (1991) 25
Journal of Crystal Growth 108 (1991) 840-843
North-Holland
Subject index
Accelerated-crucible rotation technique 262 — oxalates, hydrate 455
Adsorption 37, 89, 233, 290, 319, 433, 499 — phosphates 385, 670
Alloys 121, 572 — sulphate, hydrate 89, 290
Aluminum Characterization methods
— gallium antimonide 465 by absorption spectroscopy 534
gallium arsenide 439, 615, 661, 827 by atomic absorption spectrometry 301
indium arsenide 203, 441 by Auger electron spectroscopy 301, 335, 683, 765, 806
organic 439 by cathodoluminescence 53, 421
— oxide 377 by chemical analysis 385, 554, 670
Ammonium by deep level transient spectroscopy 699
— chloride 637 by differential thermal analysis 37
— nitrate 733 by eddy current sensor 262
Apparatus by electrical methods 25, 37, 203, 301, 449, 508, 519, 534,
— for melt growth 554, 615, 699, 728, 765
— — by Czochralski method by electron microscopy 63, 203, 277, 433, 465, 534, 549, 561,
— — — of silicon 262, 779 647, 655, 661, 670, 765, 806, 817, 831
— — by floating zone method by electron probe microanalysis 465, 549
— — — of sodium nitrate 1, 340, 541 by emission 699
— — by uniaxial solidification by infrared spectroscopy 143, 508, 670
— —— of silicon 41 by light scattering 19, 482
— for thin film growth by neutron activation analysis 309
— — by combustion flame deposition method by nuclear magnetic resonance 561
— — of diamonds 416 by optical microscopy 99, 285, 314, 421, 473, 482, 541, 751
— by vapor phase epitaxy by particle size distribution analysis 129, 561
— — through evaporation and condensation by photoluminescence 99, 441, 525, 615, 728
— —— of mercury cadmium telluride 710 by reflectance 114, 429, 615
for miscellaneous purposes by reflection high energy electron diffraction 25, 157
— — coating of fibrous substrates by CVD 190 by Rutherford back scattering 37, 549, 817
— — in-situ observation of defects by IR 482 by second harmonic generation 688
— — near IR imaging 508 by secondary ion mass spectrometry 335, 441, 449, 549, 554,
827
Barium by thermoanalysis 143
— carbonate 370 by transmission spectroscopy 429
— metaborate, B 394 by X-ray photoemission spectroscopy 683
Bismuth by X-ray methods 25, 37, 63, 99, 277, 285, 301, 309, 314,
— germanates 219, 225 319, 335, 377, 385, 441, 525, 561, 615, 655, 670, 683, 728,
Boron 63, 190 744, 765, 821
Boundary layer control 190, 394, 399 Cobalt 806
Brushite 290 — silicide 806
Burton—Cabrera—Frank theory 603 Computer simulation 105, 340, 351, 455, 499, 627, 779
Constitutional supercooling 367
Cadmium Convection 1, 8, 41, 105, 150, 173, 190, 225, 233, 240, 247, 340,
— mercury telluride 549, 710 351, 394, 508, 572, 598
— organic 525 Copper
— selenide 525 — gallium selenide 715
Calcium — organic 683
— hydrogen arsenate, hydrate 290 — oxides 683
— hydrogen phosphate, hydrate 290 — zinc alloy 121
Subject index
Dendritic growth 173, 637 — niobate 759
Devices 203, 301, 441, 621 — zinc phosphide 37
Diamond 53, 416, 421, 583, 647
Diffusional control 8, 190, 367, 449, 465, 491, 661, 751, 770 Mathematical model 129, 233, 439, 491
Dislocations 19, 33, 377, 399, 473, 615, 627, 751, 779, 817, 821 Melt growth technique
Dissolution 309, 519, 598, 670 — by Bridgman-Stockbarger method
Distribution coefficient 19, 89, 367, 508 — — of copper zinc alloy 121
Dopants 301, 449, 508, 554, 572, 598, 661, 728, 827 — — of ice 19
— — of tin bismuth alloy 572
Etching — — of zine selenide 233
— chemical 19, 203, 377, 416, 425 by Czochralski method
of bismuth germanates 219, 225
Gadolinium of gadolinium gallium garnet 621
— gallium garnet 621 of gallium arsenide 150, 508, 627, 744
Gallium of lithium niobate 759
arsenide 25, 33, 73, 105, 150, 157, 439, 508, 627, 661, 744, of semiconductors 399
827 of silicon 240, 262, 779
indium arsenide 203 theory of 240, 399
indium phosphide 99 by floating zone method
phosphide 699 — of lanthanum cerium boride 425
Garnets 621 — of sodium nitrate 1, 340, 351, 541
Grain boundary 277, 821 by traveling heater method
Gypsum 89, 290 — of aluminum gallium antimonide 465
— theory of 465
Heat flow control 41, 233, 247, 367, 541, 621, 779 by uniaxial solidification
Heterojunction 441, 549, 655 — of lithium zinc phosphide 37
— of sapphire 377
Ice 19 — of silicon 41
Impurity 19, 53, 89, 150, 240, 285, 314, 367, 394, 421, 455, 482, — theory of 367
508, 598, 615, 670, 821 by zone melting
Indium — — theory of 247
— gallium aluminum phosphide 728 — using immersed sheet heater
— organic 449, 554 — — of sodium nitrate 541
— phosphide 203, 449, 519, 554 Mercury
Interface 1, 19, 219, 225, 247, 340, 351, 394, 425, 508, 541, 572, — cadmium telluride 549, 710
621, 655, 759, 817 Microgravity 1, 8, 173, 247, 340, 351, 598
Iron 806 Morphological stability 63, 173, 319, 367, 670, 733
— silicide 806 Morphology of growth 25, 53, 63, 73, 203, 247, 277, 285, 290,
309, 314, 319, 394, 416, 637, 647, 661, 670, 733, 751, 759,
821, 831
Kinetics
of crystallization 561
of dislocation multiplication 399 Nickel
of dissolution 670 — coordination compound 285
of growth 25, 73, 105, 114, 129, 262, 277, 314, 335, 385, 439, Nitrite sodalite 143
465, 499, 519, 525, 554, 561, 603, 670, 710, 751, 759, 806, 821 Nucleation 114, 121, 129, 277, 455
of impurity incorporation 89 Numbers
of interface control 394, 751, 759 Biot 779
of nucleation 114, 121, 129, 277, 314, 455, 561, 770 Grashof 173, 219, 225, 247
Marangoni 1, 247, 340
Lanthanum Nusselt 190
— cerium boride 425 Peclet 173, 779
Lattice mismatch 99, 441, 655 Prandtl, 351
Lead Reynolds 219, 225
— strontium selenide 301 Stefan 779
— sulphide 817
— telluride 817 Optoelectronics 441
Lithium Organic crystals 8, 129, 285, 688, 751
842 Subject index
Perfection of crystals 53, 203, 314, 394, 399, 425, 429, 482, 508, — characterization 473
541, 655, 688, 699, 744, 779, 821 — high T, 473
Periodic bond chain theory 63, 290, 733 Supercooling, supersaturation 89, 114, 129, 173, 309, 314, 519,
Pharmacolite 290 637, 670, 770
Phase diagrams 309, 314, 670 Surface energy, determination of 621, 733
Phenomenological theory 73, 399, 508, 572 Surface processes 290, 499, 603, 661
Potassium Surface structure 25, 53, 73, 157, 335, 473, 733
— dihydrogen phosphate 821
— niobate 429 Thermodynamics 89, 367, 583, 661, 670, 806
— tungsten bronze 831
Thin film growth
Precursor 439, 806
by liquid phase epitaxy
Proteins 8 — of indium phosphide 519
Purification of materials 19, 41
— of mercury cadmium telluride 549
— of silicon 598
Quantum wells /size effects 203 by magnetron sputtering
— of zinc oxide 534
Rare earth by molecular beam epitaxy
— orthoferrites 309, 314 — of aluminum gallium arsenide 661, 827
— of gallium arsenide 25, 157, 433, 661, 827
Sapphire 377 — of gallium indium phosphide 99
Segregation 508 — of lead strontium selenide 301
Silicon 41, 114, 240, 262, 482, 499, 598 by vapor phase epitaxy
— carbide 335 through chemical vapor deposition
Sodium — of boron 63
— nitrate 1, 340, 351, 541 — of diamond 416, 647
Solid growth technique — of silicon 319, 499
— by explosive crystallization — of silicon carbide 335
— — of amorphous silicon 114 — for coating fibrous substrates 190
Solution growth technique through evaporation and condensation
— by flux method — of copper gallium selenide 765
— of B barium metaborate 394 — of lead sulphide 817
— of rare earth orthoferrites 309, 314 — of lead telluride 817
— of yttrium barium cuprate 473 — of mercury cadmium telluride 710
by gel method through metalorganic chemical vapor deposition
— of barium carbonate 770 — of aluminum gallium arsenide 439, 615
— of strontium carbonate 770 of aluminum indium arsenide 441
by hydrothermal growth of cadmium selenide 525
— of nitrite sodalite 143 of copper oxide 683
by low temperature method of diamond 583
of ammonium nitrate 733 of gallium arsenide 73, 105, 439
of calcium oxalate, hydrate 455 of indium gallium aluminum phosphide 728
of calcium phosphates 385, 670 of indium gallium arsenide 655
of gypsum 89 of indium phosphide 449, 554
of nickel bisglycinate, dihydrate 285 of low-dimensional devices 203
of organic crystals 751 - — of transition metals and their silicides 806
of zeolite 561 of zinc selenide 525
by top seeded pulling method theory of 491
— of potassium niobate 429
theory of 290 — bismuth alloy 572
using computer knowledge base 719
ee a, or moving boundary problem 173, 247, 340, Uniformity of growth 491
Step 416, 473, 821
Strain 33 Vapor growth technique
Sucrose 129 — by chemical transport
Superconductivity 473 — — of potassium tungsten bronze 831
— bulk 473 — by thermal oxidation