Journal of Crystal Growth 1991 - 1992: Vol 111-120 Index

93 Pages·18.4 MB·English

ISSN 0022-0248
junto GRYSTAL
GROWTH
VOLUME 120
m North-Holland
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D.T.J. HURLE R. KERN R.A. LAUDISE
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G.M. BLOM (Liquid Phase Epitaxy) Institut fir Festk6rperphysik, ETH D.W. SHAW (Elemental and Compound
Philips Laboratories, 345 Scarborough Road Hoénggerberg, CH-8093 Ziirich, Switzerland Semiconductors )
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5A T.eAl.e fafxCa:x :H E+R 1N-- O91V4- v 9(4K5 iS sn . e6t33i77c55s of Cr. ystallization) SN.a . tKioInMalU RIAns t. (ORxeisd. e InorCgr.y staMlsa)t erials DTaellaleafa asx,: TX+ 17-572ne7a5 12446S5- ,9a 9n5e SUsS5o A5u 3n9
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Faculty of Science, Himeji Inst. Technology Dept. Chemical Engineering Telefax: + 1-801-581 8692
Harima Garden City, Kamigori-chyo Univ. Wisconsin-Madison 1. SUNAGAWA ( Morphology and Minerals)
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PUBLISHED MONTHLY Librof aCorngryess Catalog Card Number 68-26537 PRINTEDI N THE NETHERLANDS
Journal of Crystal Growth 120 (1992) 407-474 omc CRYSTAL
North-Holland GROWTH
Author index to volumes 111-120
Abell, J.S., see Gencer 112 (1991) Akimoto, K.., see Okuyama 117 (1992)
Abernathy, C.R., S.J. Pearton, D.A. Bohling Akimoto, K., H. Okuyama, M. Ikeda and Y
and G.T. Muhr, The roles of aluminum Mori, Oxygen doping in CdTe, CdS and
and hydrogen in impurity contamination ZnS 117 (1992)
of AlGaAs grown by MOMBE 111 (1991) Akimoto, K., see Miyajima 117 (1992)
Abernathy, C.R., S.J. Pearton, F. Ren and J Akimoto, K.., see Nakano 117 (1992)
Song, Sn doping of GaAs and AlGaAs by Akinaga, M and H. Fukuda, Thin film
MOMBE using tetraethyltin 113 (1991) 412 growth of Bi(Pb)-Sr—Ca-—Cu-O on
Abernathy, C.R and D.A. Bohling, Low piezoelectric PbTiO, films 115 (1991)
temperature growth of AlGaAs by Akita, K.., see Hiratani 111 (1991)
MOMBE (CBE) using trimethylamine Akiyama, H., see Tokizaki 117 (1992)
alane 120 (1992) Al Allak, H.M., see Simmons 117 (1992)
Abernathy, C.R., F. Ren, S.J. Pearton, T.R Alcobé, X.. see Ferrater 113 (1991)
Fullowan, R.K. Montgomery, P.W. Wisk, Alexander, J.1.D., S. Amiroudine, J. Ouaz-
J.R. Lothian, P.R. Smith and R.N. Not- zani and F. Rosenberger, Analysis of the
tenburg, Growth of GaAs/ AlGaAs low gravity tolerance of Bridgman
HBTs by MOMBE (CBE) 120 (1992) 234 Stockbarger crystal growth. II Transient
Abramof, E., see Kudlek 117 (1992) 290 and periodic accelerations 113 (1991)
Abstreiter, G., see Eberl 111 (1991) 882 Alexander, J.1.D., see Nadarajah 118 (1992)
Adachi, S., see Takeyama 117 (1992) 1081 Alexander, K., see Brown 118 (1992)
Adair, J.H., see Rossetti, Jr 116 (1992) 251 Alexandre, F., see Benchimol 120 (1992)
Adams, S.J.A., see Simpson 117 (1992) 134 Alexiev, D., Extraction of metallic impurity
Adams, S.J.A., see Wallace 117 (1992) 320 from gallium 116 (1992)
Aers, G.C., see Wasilewski 111 (1991) 70 Allard, L.F., see Bamberger 112 (1991)
Agostinelli, E , see Leccabue 112 (1991) 644 Allen, J.W, see Zheng 117 (1992)
Aguekian, V.F., see Takeyama 117 (1992) 1081 Allenson, M.B., see Lane 120 (1992)
Agullo-Rueda, F , see Hong 111 (1991) 1016 Allerman, A.A., P.A. Barnes and S.D. Walck
Aibara, S. and Y. Morita, Crystal growth of Uniform radial flow epitaxy for thin layer
hen egg-white lysozyme using a crystal- heterostructures 112 (1991)
lization vessel produced for spacelab ex- Allovon, M., M Quillec, M. Blez and (
periment 116 (1992) 289 Kazmierski, MBE growth of graded index
Airaksinen, V.M see Ravila 114(1991) 569 AlGalnAs MOW lasers on InP 111 (1991)
Akasaki, I., see Yanagase 115 (1991) 304 Alnajyjar, A.A., see Loginov 117 (1992)
Akasaki, | , see Kuwano 115 (1991) 381 Alnayar, 4.A., C.C.R. Watson, A.W. Brink
Akasaki, I., see Hiramatsu 115 (1991) 628 man and K. Durose, Post-growth doping
Akasaki, I., see Takeuchi 115 (1991) 634 of bulk CdTe crystals with phosphorus 117 (1992)
Akasaki, I I., see Koide 115 (1991) Alonso, R.G see Samarth 111 (1991)
Akasaki, I I., see Murakami 115 (1991) 648 Amano, H., see Kuwano 115 (1991)
Aketagawa, K., T Tatsumi and J Sakai Amano, H., see Hiramatsu 115 (1991)
Limitations of selective epitaxial growth Amano, H., see Takeuchi 115 (1991)
conditions in gas-source MBI using Amano, H see Koide 115 (1991)
Si,H, 111 (1991) SOU Amano, H see Murukami 115 (1991)
Aketagawa, K., see Tatsumi 120 (1992) W7< Ambrosius H.P.M.M see Frijlink 115 (1991)
Akimoto, K., T Miyajima, H. Okuyama and Amin, S.J see Skevington 120 (1992)
Y. Mori Oxide interfacial layer in Au Amin, S.J see Skevington 120 (1992)
ohmic contacts to p-type ZnSe 115 (1991) 683 Amiroudine, S., see Alexander 113 (1991)
408 duthor OnunNEeSs iaii l
An, C.Y., see Regel 119 (1992 Appenzeller, J., see Hardtdegen 116(1992) 521
Ananth, R. and W.N. Gill, Criteria for mak Arai, H., see Nakahara 117 (1992) 830
ing uniform films by chemical vapor de Arbet-Engels, V., see Kallel 111 C1991) )
position 118 (1992 Archer, N.A.. H.D. Palfrey and A.F.W
Anastassakis, [ Elastic distortions of Willoughby, The influence of dislocations
strained layers grown epitaxially in arbi on mercury self-diffusion in epitaxial and
trary directions 114 (199) bulk grown Cd, Hg Te 117 (1992)
Anayama, C., T. Tanahashi and K. Naka Ariel, Y see Schieber 115 (1991)
jima, Selective embedded growth of GaAs Arima, Y. and T. Irisawa, Influence of sur
by MOVPE 115 (1991 face diffusion on the structure of growing
Anayama, C., see Domen 115 (1991 crystal surface LIS@L99))
Ando, H., see Sandhu 111 (1991 Arivuoli, D., see Ganesha 119 (1992)
Ando, H., N. Okamoto, A. Sandhu and 7 Armitage, D.N., H.M. Yates, J.O. Williams
Fujii, Gas-source MBE growth of n-type D.J. Cole-Hamilton and LP. Patterson
InP using TEI, PH,, and Si,H 115 (1991 ZnS grown by metalorganic chemical
Ando, H., T. Fujii, A. Sandhu, T. Takahashi, vapour deposition (MOCVD) on GaAs
H. Ishikawa, N. Okamoto and N (100) using t-butyl mercaptan and
Yokoyama, Growth of carbon-doped base dimethylzinc 117 (1992)
GaAs /AlGaAs HBT by gas-source MBE Armour, E.A., see Sun 113(1991)
using TEG, TEA, TMG, AsH,, and Armstrong, J.V., T. Farrell, T.B. Joyce, P
Si,H, 120 (1992) Kightley, TJ. Bullough and PJ. Good
Ando, H., see Sandhu 120 (1992) hew, Monitoring real-time CBE growth
Ando, K., see Ohki 117 (1992) of GaAs and AlGaAs using dynamic op
Ando, K., J. Palmer, A. Ohki, S. Tohno and tical reflectivity 120 (1992)
S. Zembutsu, Interface defect character Armstrong, J.V., see Farrell 120 (1992)
istics of Zn(SSe)—-ZnSe and ZnSe Armstrong, S., see Joyce 115 (1991)
(ZnCd)S hetero-epitaxial systems 117 (1992) Armstrong, S.R., R.D. Hoare, M.E. Pemble
Ando, M. and Y.A. Ono, Temperature ef 1.M. Povey, A. Stafford and A.G. Taylor
fects in the emission characteristics of Optical second harmonic generation
CaS : Eu thin-film electroluminescent de studies of the nature of the GaAs(100)
vices 117 (1992) surface in ai 120 (1992)
Ando, S., S.S. Chang and T. Fukui, Selective Arnaud d’Avitaya, F., see Andrieu 112 (1991)
epitaxy of GaAs /AIGaAs on (111)B sub Arnold, W.A., W.R. Wilcox, F. Carlson, A
strates by MOCVD and applications to Chait and L.L. Regel, Transport modes
nanometer structures 115 (1991) during crystal growth in a centrifuge 119 (1992)
Ando, S., T. Okada, S. Endo, T. Irie, T Arrott, A., see Strong 119 (1992)
Miya and H. Nakanishi, Edge emission Arterton, B., see Viney 117 (1992)
enhancement in CdS by laminated Arterton, B., J.W. Brightwell, S. Mason, B
CdinGaS, 117 (1992) Ray and LV.F. Viney, Impact of phase
Andonov, P., see Chibani 113 (1991) concentrations on structure and electro
André, R., see Cibert 117 (1992) luminescence of ZnS: Cu 117 (1992) 1008
Andrew, N.L., see Woodbridge 111 (1991) Arthur, J.R., see Yoo 111 (1991) 1095
Andrews, J.B. A.L. Schmale and A.C As, D.J., see Hingerl 117(1992) 341
Sandlin, The influence of gravity level Asahi, H., see Hasegawa 111 C1991) 371
during directional solidification of immis Asahi, H., see Takeyasu 11141991) 502
cible alloys 119 (1992) Asahi, H., see Kaneko 111 (1991) 638
Andrieu, S. and F Arnaud d’Avitaya, Ga Asahi, H., see Okuno 115 (1991)
adsorption on Si (111 analysed by Asahi, H., see Kaneko 120 (1992)
RHEED and in situ ellipsometry 112 (1991) Asahi, H., T. Kaneko, Y. Okuno, Y. Itani, K
Anno, H., T. Koyanagi and K. Matsubara, Asami and S. Gonda, MOMBE growth
Epitaxial growth of zincblende MnTe characteristics of antimonide compounds 120 (1992)
films as a new magneto-optical material 117 (1992) Asahi, T., see Murakami 115 (1991)
Antar, B.N., Convective instabilities in the Asaka, N., see Isoda 115 (1991)
melt for solidifying mercury cadmium tel Asami, K., see Takeyasu 111 (1991)
luride 113 (1991) Asami, K., see Okuno 115 (1991)
Antolini, A., see Genova 120 (1992) Asami, K., see Asahi 120 (1992)
Aoyama, S., see Okuyama 114 (1991) Asano, J., see Minemura 114(1991)
409
Asano, M.. see Harada ) 4 145 Austin R.I see Feldman 1992) 295
Aseev, A.l 4\.V. Latyshev and A.B. Krasil Awschalom, D.D., see Hong 1991) 1016
vikov, Direct observation of monoatomic Ayers, J.E.. S.K. Ghandhi and LJ. Schowal
step behaviour in MBE on Si by reflec ter, Crystallographic tilting of heteroepi
tion electron microscopy 11 1991) 395 taxial layers 1991) 430
Aseev, A.l see Krasilnikov | 1992) 17 Azoulay, M S. Rotter, G. Gafni and M
Ashenford, D.E., P. Devine, J.H.C. Hogg, B Roth, The crystalline quality distribution
Lunn, C.G. Scott and M. Verma, Varia in CdZnTe single crystal correlated to
tions m th Structura md =clectrical the interface shape during growth
properties as a function of depth in CdTe Azoulay. M.. S. Rotter, G. Gafni, R. Tenne
layers grown on InSb substrates 1992) 233 ind M Roth, Zinc segregation in
Ashenford, D.I 117 (1992) ) CdZnTe grown under Cd/Zn partial
Ashida, M.. see ec 112 (1991) pressure control 7(1992) 276
Ashida, M., see ¢ $(1991) 9 Azuma, M., see Nakayama (1991) 831
Aslam, N.. E.D T.C.Q. Noakes Azzam, W.J.. see Bahl (1991) 479
Mullin and A.F.W. Willoughby, The dif
fusion of zinc in cadmium telluride | ») 2 Baar, D.J., see Hayashi (1991) 782
Asom, M.1 G. Livescu. M. Geva, V Babijchuk, LP.. E.F. Dolzhenkova, M.B
Swaminathar L.A Luther RE Kosmyna and V.V. Nekrasov, Growth of
Leibenguth, V.D. Mattera, E.F. Schu HTSC Bi-containing single crystalsb y the
bert, J.M. Kuo and R. Kopf, Comparison spontaneous crystallization method 116 (1992) 529
of delta doped GaAs grown by MBE and Bachem, K.H., see Kohler 1(1991) 295
GSMBE using different arsenic species 1(1991) 2 Bachmann, K.J., see Xing 3(1991) 113
Asom, M.T., V. Swaminathan, G. Livescu Bacsa, W., see Von Kanel (1991) 889
M. Geva, L.C. Luther, R.E. Leibenguth Badia, F., see Ferrater 13 (1991) 181
V.D. Mattera and T. Hayes, Hydrogen Baecta Moreira, M.V., M.A. Py and E. Tun
passivation of delta doped GaAs (1991) 2 cel, A correlation between surface mor
Asom, M.T., J. Mosovsky, R.E. Leibenguth phology and RHEED intensity variation
ILL. Zilko and G. Cadet, Transient arsine for growth of GaAs by molecular beam
generduarintg iopeoninng of solid source epitaxy 2(1991) 14
MBE chambers 241991) 597 Bagai, R.K.. M. Srivastava, K. Sharma and
Asonen, H., see Tappura (1991) W.N. Borle, In-situ delineation of defects
Asonen, H., see Tappura 20(1992) 14 in ISOVPE-grown Hg Cd_.Te layers 241991) 402
Asonen, H., see Zhang 120 (1992) 2 Bagot, D., S. Rolland, R. Granger and R
Aspnes, D.E.. R. Bhat, C. Caneau, E. Colas Triboulet, Linear thermal expansion co
L.T. Florez, $8. Gregory, J.P. Harbison, |! efficient in Hg, ,Cd.Te and Hg
Kamiya, V.G. Keramidas, M.A. Koza Zn Te
M.A.A. Pudensi, W.I Ouinn, S.A Bahl, S.R.. WJ. Azzam and J.A. del Alamo
Schwarz, M.C. Tamargo and H. Tanaka Orientation dependence of mismatched
Optically monitoring and controlling epi In, Al As /in Ga, As HFETs (1991) 479
taxial growth (1992) } Baldereschi, A., see Von Kanel (1991) 8&9
Assenov, R. and E.K. Polychroniadis, On the Baldwin, K.W., see Pfeiffer (1991) 333
comparative characterization of single Balk, P.. see Kayser 201991
crystalline PbTe(1) grown by vertical Ball, G., see Lane 20 (1992)
Bridgman and travelling heater methods 112(1991) 227 Ballingall, J.. see Hersee (1992) 218
Astles, M.A.. see Berlouis 7 (1992) § Ballingall, J.M.. see Ho (1991) 233
Asties, M.G.. N. Shaw. G. Blackmore and Ballman, A.A., see Cheng 2(1991) 309
R.S. Hall, Improved control of composi Ballutaud, D., see Marbeuf 7(1992) 197
tion and electrical properties of liquid Baltramiejinas, S. Pakalnis and G. Tamu
phase epitaxial (CdHg)Te layers 7 (1992) 213 laitis, Transient effects in photoexcited
Atasoy, O.A., see Yilmaz (1992) 3 CdS microcrystals 11741992) 62
Atherton, L.J., see De Yoreo 3(1991) 691 Balyakina, 1L.V., see Kulakov 113 (1991) 653
Atwater, H.A., see Tsai (1991) 931 Balzuweit, K., see Vogels 116 (1992) 397
Aubin, M., see Gagnon (1991) ) Bamberger, C.E.. L.F. Allard, D.W. Coffey
Augustus, P.D., see Kightley 2(1991) ‘ ind M.R. Bennett, Whiskers of TiN by
Aulombard, R.L., see Pagés 7 (1992) topochemical reaction 11241991) 47
Austin, R.F., see Doran 117 (1992) Ban, V.S.. see Jones 120¢(1992) 150
410 Author index to olumes 111 120
Banan, M., R.T. Gray and W.R. Wilcox, An Baur, B., see Heinecke 120 (1992)
experimental approach to determine the Bauser, E., see Hansson 114 (1991)
heat transfer coefficient in directional so Bauser, E., see Chen 118 (1992)
lidification furnaces 113 (1991) 567 Baxter, C.S., W.M. Stobbs and J.H. Wilkie.
Banan, M., see Caram 114 (1991) 249 The morphology of ordered structures in
Bandeira, I.N , see Regel 119 (1992) 94 II-\V alloys: inferences from a TEM
Bando, Y , see Terashima 115 (1991) 745 study 112 (1991)
Banyai, L., see Uhrig 117 (1992) 598 Beaglehole, D., Surface melting of small par
Baranyuk, V.Ye., see Kosyachenko 117 (1992) 583 ticles, and the effects of surface impuri
Barber, P.G., J.T Petty and R.L. Stevens, ties 112 (1991)
Crystal growth precursors of YBa,Cu, Beall, R.B., see Harris 111 (1991)
QO, predicted from crystal habits by Beam ii, EA. TS Henderson, A.C
use of moments of momentum 112 (1991) Seabaugh and J.Y Yang, The use of
Barczy, P., J.S 6lyom and L.L. Regel, Solidi- tertiarybutylphosphine and tertiarybuty!
fication of Al-Al, Ni(Cu) eutectics at high arsine for the metalorganic molecular
gravity 119 (1992) 160 beam epitaxy of the In, <,Gay ,,As/InP
Barilo, S.N., A.P. Ges, S.A. Guretskii, D.1 and Iny Ga, <»P/GaAs materials sys
Zhigunov, A.V. Zubets, A.A. Ignatenko, tems 116 (1992)
A.N. Igumentsev, 1.D. Lomako, A.M Bechhoefer, J., see Géminard 114 (1991)
Luginets, V.N. Yakimovich, L.A Bechtold, J., see Tao 114 (1991)
Kurochkin, L.V. Markova and O.I. Krot, Beck, W.A., see Svensson 111 (1991)
Growth of bulk single crystals of Becker, E.E., see Chand 111 (1991)
YBa,Cu,0,_, from a new type of cru Beer, K., B. Baur, H Heinecke and R
cible 119 (1992) 403 Treichler, Improvements in silicon dop
Barlow, R.D., see Powell 111 (1991) 907 ing of InP and GalnAs in metalorganic
Barnes, P.A., see Allerman 112 (1991) 583 molecular beam epitaxy 120 (1992)
Barrau, J., see Starck 120 (1992) 180 Bell, W., A.E.D. McQueen, J.C. Walton,
Barski, A.., see Garcia 111 (1991) 578 D.F. Foster, D.J. Cole-Hamilton and J.E
Barthe, F , see Moisson 111 (1991) 141 Hails, Decomposition and reactivity of
Barthou, C., see Zeinert 117 (1992) 1016 tellurium alkyls in the liquid and gas
Bartoli, F.J., see Youngdale 111 (1991) 693 phases; dihex-5-enyltellurium and dipent
Basaran, E., see Powell 111 (1991) 907 4-enyltellurium as mechanistic probes 117 (1992) 58
Basavalingu, B. and J.A.K. Tareen, Hy- Benalloul, P., see Zeinert 117 (1992) 1016
drothermal phase relations in V,O,-H,O Ben-Amar, G., see Horowitz 119 (1992) 39]
system 113 (1991) 659 Benchimol, J.L., X.Q. Zhang, Y. Gao, G. Le
Basmaji, P., see Notari 116 (1992) S518 Roux, H. Thibierge and F. Alexandre,
Bassani, F., K. Saminadayar, S. Tatarenko, Chemical beam epitaxy of AlGaAs and
K. Kheng, R.T. Cox, N. Magnea and C AllnAs using trimethylamine alane pre
Grattepain, Indium doping of CdTe lay- cursor 120 (1992)
ers and CdTe/Cd,_,Zn,Te microstruc- Benhlal, J.T., R. Granger, D. Lemoine, R
tures 117 (1992) riboulet and Y. Marqueton, Irreversible
Batur, C., R.B. Sharpless, W.M.B. Duval, optical response in Cd,_,.Zn,Te mixed
B.N. Rosenthal and N.B. Singh, Identifi- crystals 117 (1992)
cation and control of a multizone crystal Benisty, H., see Béckenhoff 114(1991)
growth furnace 119 (1992) Bennema, P., see Boek 114 (1991)
Baturin, N.A., see Vorobiov 119 (1992) Bennema, P.., see Vogels 116 (1992)
Bauer, G., see Springholz 113 (1991) Bennett, M.R., see Bamberger 112 (1991) 47
Bauer, G.., see Enichlmair 117 (1992) Benoit, J., see Zeinert 117 (1992) 1016
Bauer, S., A. Rosenauer, J. Skorsetz, W Bensaoula, A see Hansen 116 (1992) 271
Kuhn, H.P Wagner, J Zweck and W Bensaoula, A.., see Roth 120 (1992) 212
Gebhardt, Investigation of strained ZnTe Benson, S.W , see Francis 112 (1991) 474
epilayers by high resolution electron mi- Benz, K.W., see Meyer 117 (1992) 656
croscopy 117 (1992) 297 Benz II, R.G., B.K. Wagner, D. Rajavel and
Baughman, R.J., Quartz crystal growth 112 (1991) 753 C.J. Summers, Chemical beam epitaxy of
Baur, B., see Heinecke 111 (1991) §990 CdTe, HgTe, and HgCdTe 111 (1991)
Baur, B., see Heinecke 120 (1992) 140 Bergmann, R., see Hansson 114 (1991)
Baur, B., see Beer 120 (1992) 312 Berkowski, M., see Scheel 115 (1991)
Author index to olumes 111 120
Berlouis, L.E.A., L.M Peter, R Greef and Block, T.R. and B.G. Streetman, Correlation
M.A. Astles In-situ spectroscopic char between the dampening of RHEED os
acterisation of passivation layers on cillations and the photoluminescence of
(Cd,Hg)Te 117 (1992) quantum wells in the presence of AsO 111 (1991) Qs
Bernardi, S., ¢ Bocchi, (¢ Ferrari, P. Fran Blood, P see Foxon 111 (1991) 1047
zosi and | Lazzarini Structural charac Blunier, S see Tiwari 111 (1991) Tw
terization of Hg, Cd, >Te/CdTe LPE Bocchi, ¢ see Bernardi 113 (1991) 53
heterostructures grown from Te solutions 113 (1991) Bocchi, C., ¢ Ferrari, P. Franzosi, M. Scaf
Bernklau, D., see Riechert 111 (1991) fardi, P Diaz J.G. Rodriguez and T.A
Beserman, R., see Turco-Sandroff 111 C1991) Prutskij, Investigation of LPE Ga,_,Al.,
Betrouni, M., see Fikri 119 (1992) As / GaAs laser structures by double
Bhargava, R.N Compact blue lasers in the crystal diffractometry 113 (1991)
near future 117 (1992) Bocelli, C.. G Calestani, O. de Melo, F
Bhat, H.1 , see Dhanaraj 113 (1991) Leccabue, ( Pelosi and BE Watts,
Bhat, 1.B., Recent advances in the organo Crystallographic properties of some
metallic vapor phase epitaxial growth of ternary and multinary Te-based semicon
HgCdTe by the direct alloy growth pro ductors 113 (1991)
cess 117 (1992) Bochkarev, A.E., see Kazakov 116 (1992)
Bhat, R.., see Caneau 114(1991) Béckenhoff, E. and H Benisty, Evolution of
Bhat, R.., see Caneau 118 (1992) 3D growth patterns on nonplanar sub
Bhat, R.., see Aspnes 120 (1992) strates 114 (1991)
Bhat, R., Current status of selective area Boeck, T., see Rudolph 118 (1992)
epitaxy by OMCVD 120 (1992) Boek, E.S., D. Feil, WJ Briels and P Ben
Bhattacharya, P.K., see Chen 111 (1991) sie) ® nema, From wave function to crystal
Bhattacharya, P.K., see Kim 111 (1991) 633 morphology: application to urea and al
Bhattacharya, P.K., see Sherwin 120 (1992) 162 pha-glycine 114(1991)
Bicknell-Tassius, R.N see Kuhn 117 (1992) 600 Boggess, T.F., see Hasenberg 111 (1991)
Bicknell-Tassius, R.N.., see Waag 117 (1992) 820 Bohling, D.A., see Abernathy 120 (1992)
Bicknell-Tassius, R.N.., see Yakovlev 117 (1992) 854 Bohling, D.S., see Abernathy 111 (1991)
Bicknell-Tassius, R.N., see Kuhn 117 (1992) Boland, J.J., see Takamori 112 (1991) 660
Bicknell-Tassius, R.N., see Uraltsev 117 (1992) Bolt, R.J.. M van der Mooren and M.T
Biderman, S., see Horowitz 119 (1992) Sebastian Etching experiments on flux
Bienfait, M., see Maruyama 118 (1992) grown potassium titanyl phosphate KTiO
Bierlein, J.D., see Cheng 112 (1991) PO, (KTP) 112 (1991)
Bilger, G., see Mauch 117 (1992) Bolt, R.J.. M.H. van der Mooren and H. de
Bilgram, J.H., see Steininger 112 (1991) Haas, Growth of KTiOPO, (KTP) single
Bimberg, D., see Grundmann 115 (1991) crystals by means of phosphate and phos
Bindal, M.M., S.K. Singhal, B.P. Singh, R.K phate / sulfate fluxes out of a three-zone
Nayar, R. Chopra and A. Dhar, Synthesis furnace 114 (1991)
of cubic boron nitride using magnesium Bolt, R.J. and W.J.P. van Enckevort, Obser-
as the catalyst 112 (1991) vation of growth steps and growth hillocks
Binder, R., see Masumoto 117 (1992) on the {100}, {210}, {011} and {101} faces
Binsma, J.J.M., see Kolar 116 (1992) of flux grown KTiOPO, (KTP) 119 (1992)
Bird, C.D., see Bordui 113 (1991) Bonnafé, J see Triboulet 117 (1992)
Biswas, D. and H. Morkog, A safety system Bonner, W.A., see Caneau 114 (1991)
for gas source molecular beam epitaxy 113 (1991) Bonnet, J.E , see Marbeuf 117 (1992)
Black, D., see Steiner 114(199]1) Bonnevie, D., see Goldstein 120 (1992)
Blackmore, G., see Astles 117 (1992) Bordui, P.F., R.G. Norwood, C.D Bird and
Blaha, J., see McCrary 112 (1991) G.D Calvert Compositional uniformity
Bleuse, J., see Pautrat 117 (1992) in growth and poling of large-diameter
Bleuse, J.. N. Magnea, L. Ulmer, J.L. Pau lithium niobate crystals 113 (1991)
trat and H. Mariette, Room-temperature Borisov, A.G., O.P Fedorov and V.V
laser emission near 2 pm from an opti- Maslow, Growth of succinonitrile den-
cally pumped HgCdTe separate-confine drites in different crystallographic direc-
ment heterostructure 117 (1992) 1046 tions 112 (1991)
Blez, M., see Allovon 111 (1991) 484 Borle, W.N., see Bagai 112 (1991)
Bliss, D.E., see Vanderah 118 (1992) 385 Borlind, J , see Nordell 114 (1991)
412 Author index to t olumes 111 120
Borrego, J.M., see Venkatasubramanian 112 (1991) Broser, |., see Hoffmann 117 (1992)
Bothra, S.., see Venkatasubramanian 112 (1991) Broser, I., see Podlowski 117 (1992)
Béttner, H., see Springholz 113 (1991) Broser, I., see Thurian 117 (1992)
Bouchenaki, C , see Ullrich 117 (1992) Broser, I., see Fricke 117 (1992)
Bouchenaki, C , see Ullrich 117 (1992) Broser, I., Ch Fricke, B. Lummer, R. Heitz
Boulesteix, C., see Marfaing 118 (1992) H. Perils and A. Hoffmann, Optical non
Boulou, M., see Starck 120 (1992) linearity and fast switching due to bire
Boutellier, R., see Sun 112 (1991) fringence and mode coupling in CdS
Bove, P., see Garcia 111 (1991) crystals (1992)
Bowen, D.K., see Powell 111 (1991) Brown, A.S., see Metzger 111 (1991)
Bowen, D.K., see Capano 116 (1992) Brown, DJ. and K Alexander, Rates of
Bowers, K.A., see Ren 111 (1991) nucleation in the crystallization of su
Bowers, K.A.., see Ren 111 (1991) CTOSE€ (1992)
Bowers, K.A., see Ren 117 (1992) Brown M see Pike (1991)
Boyce, P.J., see Nakano 117 (1992) Brown, P.D., see Loginov 7 (1992)
Bozovic, I... see Eckstein 111 (1991) Brown, P.D., Y.Y Loginov K Durose
Brabers, V.A.M., see Emmen 118 (1992) Mullins, T. Taguchi, T Burbery, S. Law
Bradley, R.R., see Kightley 112 (1991) son-Jack and |. Jones Microstructural
Bradley, R.R., see Woodhouse 120 (1992) properties of epitaxial CdS, (Cd,Zn)S and
Brandt, G.B., see Kun 117 (1992) CdS ||(Cd,Zn)S superlattices 7 (1992)
Brandt, O., L. Tapfer, K. Ploog, M. Hohen Brown, P.D., see Loginov (1992)
stein and F. Phillipp, Growth processes Brown, R.A see Kim (1991)
and relaxation mechanisms in the molec Brown, W.I see Eidelman 3(199]1)
ular beam epitaxy of InAs/GaAs het Brown-Goebeler, K., see Chang (1991)
erostructures 111 (1991) Brush, L.N G.B. McFadden and S.R
Brandt, O., K. Ploog, L. Tapfer, M. Hohen Coriell, Laser melting of thin silicon films (1991)
stein and F. Phillipp, Synthesis and struc Bryskiewicz, T., see Roth (1991)
tural configuration of highly strained Bublik, V.T., see Charniy (1992)
InAs films in GaAs 115 (1991) Bublik, V.1 see Charniy (1992)
Brantley, S.L., see Voigt 113 (1991) Buchan, N.1., see De Lyon (1991)
Brasil, M.J.S.P see Turco-Sandroff 111 (1991) Buhrman, R.A., see Norton (1991)
Bratina., G., see Vanzetti 117 (1992) Bulle-Lieuwma, C.W.T see Theunissen (1992)
Braun, R.J. and S.H Davis, Oscillatory in Bullough, TJ., see Armstrong (1992)
stabilities in rapid directional solidifica Bullough, TJ see Joyce (1992)
tion: bifurcation theory 112 (1991) Bullough, TJ see Farrell (1992)
Brecevic, L., see Markovic 118 (1992) Burbery, T see Brown 7 (1992)
Brennan, T.M., see Tsao 111 (1991) Burdette, H., see Steiner (1991)
Breuilly, L., see Muranaka 112 (1991) Burdin, B.V., L.L. Regel, A.M Turchaninov
Briels, W.J., see Boek 114 (1991) and O.V. Shumaev, The peculiarities of
Brighten, J.C., see Powell 111 (1991) material crystallization experiments in the
Brightwell, J.W., see Viney 117 (1992) CF-18 centrifuge under high gravity (1992)
Brightwell, J.W., see Arterton 117 (1992) Bureyev, A.V., see Butkhuzi (1992)
Brillouet, F., see Pagnod-Rossiaux 120 (1992) Burkert, M., see Gille (1991)
Brinkman, A.W., see Sang 113 (1991) Burkhardt, f see Sun 2(1991)
Brinkman, A.W., see Loginov 117 (1992) Buschert, J see Samarth (1991)
Brinkman, A.W., see Alnajjar 117 (1992) Buskes, H., see Hartley 7 (1992)
Brinkman A.W., see Simmons 117 (1992) Busse, W., see Homme! 7 (1992)
Briones, F., see Gonzalez 111 (1991) Butkhuzi, T.V., A.V Bureyev A.N Geor
Briones, F and A. Ruiz Atomic layer gobiani N.P Kekelidze and r.G Khu
molecular beam epitaxy (ALMBE) lordava, Optical and electrical properties
growth kinetics and applications 111 (1991) of radical beam gettering epitaxy grown
Briot, O., see Pagés 117 (1992) n- and p-type ZnO single crystals (1992)
Britt, J., see Chu 117 (1992) Butkhuzi, T.V A.N. Georgobiani, B.T
Brock, T., see Munns 120 (1992) Eltazarov, T.G. Khulordava and M.B
Bronshteyn, V.I and A.A. Chernov Freez Kotljarevsky, Blue light emitting diodes
ing potentials arising on solidification of on the base of ZnSe single crystals (1992)
dilute aqueous solutions of electrolytes 112 (1991) 129 Butter, E see Keller (1992)
Author index to volumes 111 120
aballero, M.A., see Gonzalez-Manas 113 (1991) 669 effect of crystal anisotropy on lamellar
abanel, R., see Etienne 111 (1991) 1003 orientations and wavelength dispersion 118 (1992)
acioppo, E. and M.L. Pusey, The solubility aroli, C., see Caroli 118 (1992)
of the tetragonal form of hen egg white arr, D., see Hartley 117 (1992)
lysozyme from pH 4.0 to 5.4 114(1991) arter, C.B., see Norton 113 (1991)
adet, G , see Asom 112 (1991) arter, C.B., see Norton 114 (1991)
adoret, R., see Chaput 112 (1991) astagné, J., see Harris 111 (1991)
alestani, G., see Bocelli 113 (1991) astillo, J.L., P.L. Garcia-Ybarra and D.E
allec, R.., see L’Haridon 113 (1991) Rosner, Morphological instability of a
alvert, G.D., see Bordui 113 (1991) thermophoretically growing deposit 116 (1992)
amel D., see Garandet 113 (1991) avenett, B.C , see Simpson 117 (1992)
ammack, D., see Olego 117 (1992) avenett B.C , see Wallace 117 (1992)
Oetee aneau,n C., R. Bhat, M.R. Frei, S.A erullo, M., see Eaglesham 111 (1991)
Schwarz, W.A. Bonner and M. Koza, Se esnulevicius, J., see Woggon 117 (1992)
lective OMVPE of GalnAs and InP using habot, B., see Scheel 115 (1991)
a polycrystalline InP mask 114 (1991) ‘hait, A.., see Arnold 119 (1992)
aneau, ( R. Bhat and M.A. Koza, Depen halmers, S.A., see Petroff 111 (1991)
dence of doping on substrate orientation FAFr~ ARhaARlm ers, S.A., H. Kroemer and A.C. Gos
for GaAs:C grown by OMVPE 118 (1992) sard, The growth of (Al,Ga)Sb tilted su
aneau, ( see Aspnes 120 (1992) perlattices and their heteroepitaxy with
anright, D and S.H Davis, Buoyancy ef InAs to form corrugated-barrier quan-
fects of a growing, isolated dendrite 114 (1991) tum wells 111 (1991)
ao, D.S., Z.M. Fang and G.B. Stringfellow, hamarro, M.A., (¢ Gourdon and P. Laval-
Organometallic vapor-phase epitaxial lard, Photoluminescence polarization
growth of Al Ga,_ Sb and Al.Ga properties of CdS Se, nanocrystals in
As Sb 113 (1991) glasses: evidence for hexagonal structure 117 (1992)
ao, F.N., see Zhong 119 (1992) hamberlain, J.M., see Stanley 111 (1991)
ao, X.Z and AF. Witt Decorated disloca hand, N., T.D. Harris, $.N.G. Chu, ELE
tions in SI-GaAs as revealed by dark Becker, A.M. Sergent, M. Schnoes and
field NIR transmission microscopy 112 (1991) D.V Lang, Variation of background im-
ao, X.Z. and A.F. Witt, Identification of purities in Al Ga,_. As (0.3 <x <04)
dislocation etch pits in n-type GaAs by with growth temperature: implications for
NIR transmission microscopy 114 (1991) device leakage current and surface
apano, M.A., L. Hart, D.K. Bowen, D heterointerface roughness 111 (1991)
Gordon-Smith, C.R. Thomas, C.J. Gib handley, P and RJ.H. Clark, The flux
bings, M.A.G. Halliwell and L.W. Hobbs growth of single crystals of vanadium
Strain relaxation in Si ,Ge, layers on doped ZrSiO,, HfSiO,, ZrGeO, and
S001) 116 (1992) HfGeO, as well as of chromium-doped
aram, R., M. Banan and W.R. Wilcox, Di ZrSiO, and terbium-doped ZrGeO, 116 (1992) 151
rectional solidification of Pb-—Sn eutectic hang, A.M., see Chin 111 (1991) 466
with vibration 114 (1991) hang, H.S.W., see Schleich 112 (1991) 727
ardone, F., see De Lyon 111 (1991) hang, L.L., see Munekata 111 (1991) 1011
arlin, J.F., see Rudra 111 (1991) hang, L.L., see Hong 111 (1991) 1016
arlin, J.F.. A. Rudra, R Houdré, P Rute hang, R.S.F see Shaw 112 (1991) 73]
rana and M llegems Effect of growth ‘hang, S.K., see Yao 111 (1991) 823
interruptions on ultra-thin InAs /InP hang, S.K., see Lee 117 (1992) 148
quantum wells grown by chemical beam hang, S.K., C.D. Lee, HI Park and ¢
epitaxy 120 (1992) Chung, Exciton transfer processes
arlin, J.F see Rudra 120 (1992) ZnSe Te, 117 (1992) 793
arlson, DJ. and A. Witt Quantitative hang, S.S see Ando 115 (1991) 69
analysis of the effects of vertical mag hang, T.Y., see Chin 111 (1991) 466
netic fields on microsegregation in Te hang, T.Y., NJ. Sawer, J.E. Zucker, K.1
doped LEC GaAs 116 (1992) Jones, B. Tell, K. Brown-Goebeler, M
arlson, DJ see Laudise 118 (1992) Wegener and D.S. Chemla, High quality
arlson, F see Arnold 119 (1992) GalnAs /AlGalnAs AllnAs heterostruc
arlsson, J.-O see Harsta 114(1991) tures on Si ion implanted semi-insulating
aroli, B., ¢ Caroli, G Faivre and J. Mergy InP substrates for novel high perfor
Lamellar eutectic growth of CBr,—€ Cl, mance optical modulators 111 (1991) 475
414 duthor index t olumes 111-120
hang, W.S.C., see Niki 111 (1991) 419 strained GaAs/In,Ga,_.As multiple
‘hang, Y.H., see Hu 114(1991) 191 quantum wells grown on GaAs(100) sub
hangkang Chen, see Chen 118 (1992) 101 Strates (1991) 4 4
hapman, J.N., see Kean 111 C1991) 189 hen, M see Wu (1991) 5
haput, L.. R. Cadoret and M. Mihailovic hen r.P FR Chen Y« Chuang, Y.D
Experimental and theoretical study of InP Guo LG Peng rs Huang and LJ
homoepitaxy by chemical vapour deposi Chen Study of twins in GaAs GaP and
tion from gaseous indium chloride and InAs crystals (1992)
hydrogen diluted phosphine 112 (1991) 691 hen, Wei see Chen (1991)
harniy, L.A., A.N. Morozov, K.D. Scherba hen, X see © Donnell (1992)
chov, V.T. Bublik and 1.V . Stepantsova hen, X see Trager-Cowan 7 (1992)
X-ray diffuse scattering identification of hen Y.C., P.K. Bhattacharya ind J Singh
matrix As-rich microdefects in GaAs Strained layer epitaxy of InGaAs by MBI
crystals 116 (1992) and migration enhanced epitaxy com
harniy, L.A., A.N. Morozov, V.1 Bublik, parison of growth modes and surface
K.D. Scherbachev 1.V. Stepantsova and quality (1991)
V.M. Kaganer, Study of microdefects and hen YA see Kim (1991)
their distribution in dislocation-free Si hen Ying see Li (1992)
doped HB GaAs by X-ray diffuse scatter hen Ying, see Li (1992)
ing on triple-crystal diffractometer 118 (1992) 163 hen, Yunliang see Shen (1991)
hatenoud, F., see Williams 111 (1991) 1066 heng Gan Chao Qian Zhi Qiang Tang
haudhry, M.1., RJ. McCluskey and R.I Guang Kui Song Wen Bao and Tang
Wright, The role of carrier gases in the Hong Gao I Op sec ded growth of
epitaxial growth of B-SiC on Si by CVD 113(199]) KTiOPO, from molten tungstate solu
‘hemla, D.S., see Chang 111 (1991) tion (1991)
‘hen, C.H., see Xue 113 (1991) heng, H., see DePuydt (199?)
hen Changkang, B.M. Wanklyn, Ff heng, H.C and M.H Juang, Growth of
Dieguez, AJ. Cook, J.W. Hodby, A single-crystalline CoSi on (111)Si at low
Schwartzbrod, A. Dabkowski and H annealing temperatures by a nonultra
Dabkowska, Phase diagram and crystal high vacuum method (1991)
growth of Pb,Sr,CY.Ca,_ , )Cu,O, 118 (1992) 101 heng, L.K., J.D Bierlein C.M Foris and
hen, F.R., see Chen 118 (1992) 109 A.A. Ballman, Growth of epitaxial thin
hen H.C , see Tao 114 (1991) 179 films in the KTiOPO, family of crystals (1991)
‘hen, H.S., see Hong 111 (1991) 984 heng, Xingyu, see Li (1991)
‘hen, J.F and AY Cho, Tellurium doping hernov 4.A., see Bronshteyn (1991)
study of GaSb grown by molecular beam hernov, A.A see Mikheev (1991)
epitaxy using SnTe 111 (1991) hernov AA How does the flow within
hen, J.F., L. Yang, M.C. Wu, $.N.G. Chu the boundary layer influence morphologi
and A.Y. Cho, Studies of the tunneling cal stability of a vicinal face? (1992)
currents in the InAs/AISb /GaSb single ‘hi, A., see Fashe (1991)
barrier interband tunneling diodes grown ‘hiang, C.D., see Chen (1991)
on GaAs substrates 111 (1991) Chibani, A., R. Gauthier, P Pinard and P
Chen, J.S., Y.L. Wu, C.D. Chiang and T.B Andonov, Etude de la texture des rubans
Wu, Growth of Hg, ,Cd Te heterolay- EPR de silicium polycristallin photovol
ers by slider LPE using separate compen- taique 113 (1991)
sating atmosphere of mercury 113 (1991) Chikyow, T., see Koguchi 111 (:991)
Chen, J.X., F. Ernst, P.O. Hansson and Ef Chin, A., T.Y. Chang, A. Ourmazd, E.M
Bauser, Liquid phase epitaxy of GeSi on Monberg, A.M. Chang and C. Kurdak,
{111} Si substrates: lattice defect struc Effects of substrate orientation, pseudo
ture and electronic properties 118 (1992) morphic growth and superlattice on alloy
Chen Jinfeng, see Li 118 (1992) scattering in modulation doped GalnAs 111 (1991)
Chen Jinfeng, see Li 119 (1992) Chin, A.., see Hersee 120 (1992)
Chen, L.J., see Chen 118 (1992) 109 Chiu, L.C., see Tran 113 (1991)
Chen, Li, K.C. Rajkumar, A. Madhukar, Wei Chiu, T.H., J.E. Cunningham, J.A. Ditzen
Chen, S. Guha and K. Kaviani, Realiza- berger, W.Y. Jan and S.N.G. Chu, Char
tion of sharp excitonic features in highly acterization of the GaAs :¢ and AlGa