Ion Impantation Technology: 16th International Conference on Ion Implantation Technology; IIT 2006 (AIP Conference Proceedings Accelerators, Beams, and Instrumentations) PDF
Preview Ion Impantation Technology: 16th International Conference on Ion Implantation Technology; IIT 2006 (AIP Conference Proceedings Accelerators, Beams, and Instrumentations)
Downloaded 28 Aug 2009 to 41.225.183.34. Redistribution subject to AIP license or copyright; see http://proceedings.aip.org/proceedings/cpcr.jsp ION IMPLANTATION TECHNOLOGY Downloaded 28 Aug 2009 to 41.225.183.34. Redistribution subject to AIP license or copyright; see http://proceedings.aip.org/proceedings/cpcr.jsp To learn more about the AIP Conference Proceedings, including the Conference Proceedings Series, please visit the webpage http://proceedings.aip.org/proceedings Downloaded 28 Aug 2009 to 41.225.183.34. Redistribution subject to AIP license or copyright; see http://proceedings.aip.org/proceedings/cpcr.jsp ION IMPAPRTLICALNESTATION AND TECHNOLOGY FIELDS 16th International Conference on Ion Implantation Technology IIT 2006 Commemorative Volume of the Division of Particles and Fields of the Mexican Physical Society Marseille, France 11 – 16 June 2006 Morelia Michoacán, México 6 –12 November 2005 PART B EDITORS Karen J. Kirkby David Chivers Russell Gwilliam Ion Links International, Ltd., Andy Smith West Lothi a n , S EcDotIlTaOndRS Surrey Ion Beam Centre, ATI, Miguel A. Pérez University of Surrey, England Cinvestav Luis F. Urrutia UNAM Luis Villaseñor SPONSORING ORGANIZATIONS UMSNH *Advanced Beam Technology - AIBT Nissin Ion Equipment Conseil General des Bouches-du-Rhone Air Products & Chemicals, Inc. Plansee Metal GmbH Marseille Provence Metropole Applied Materials - AMAT Praxair Electronics Pays D'aix Development Atmel Rousset S.A.S. Semequip Inc. Provence Promotion ATMI Inc. SEN Corporation University de Provence Axcelis Technologies, Inc. SOITEC University Paul Cezanne/TECSEN SPONSORING ORGANIZATIONS Cascade Scientific ST Microelectronics Ville de Marseille MaUthneisvoenr-sTritigya os/fL iMndice-hNoipapcoán nSa (nUsoMSNVHa)rian Semiconduction Equipment Division of Particles and Fields of the Mexican Physical Society (DPyC-SMF) Mexican Council on Science and Technology (CONACyT) * Sponsors of the Conference Proceedings CD-ROM MelvMilelelv, iNllee,w N eYwo rYko, r2k0, 200606 AIP ACIOPN CFOERNEFNECREE NPCREO CPEREODCINEGEDS IN G VSO LU M VEO 8L5U7ME 866 Downloaded 28 Aug 2009 to 41.225.183.34. Redistribution subject to AIP license or copyright; see http://proceedings.aip.org/proceedings/cpcr.jsp Editors: Karen Kirkby David Chivers Russell Gwilliam Ion Links International, Ltd. E-mail: Andy Smith St. Mary's Place Bathgate Surrey Ion Beam Centre West Lothian EH48 1DS Advanced Technology Institute Scotland School of Electronics and Physical Sciences Guildford, Surrey GU2 7XH E-mail: [email protected] England The articles on pp. 6–10, 13–14, 32, 38–44, 47–55, 63–68, 71–72, 86–92, 98–101, 104– E-mail: [email protected] 121, 125–129, 141–147, 151–152, 155–156, 166–170, 173–174, 179, 202–204, 211–213, E-mail: [email protected] 221–222, 228–238, 243–251, 261–262, 267–273, 277–281, 284–287, 290–291, 299–311, E-mail: [email protected] 324–326, 329–335, 343–354,364–382, 390–398, 406–409, 412–417, 420–423, and 426– E-mail: E-mail: 432 were authored by U. S. Government employees and are not covered by the below mentioned copyright. The articles on pp. 239 and 327–328 are © British Crown Copyright (2000) and are published by permission of the United Kingdom Ministry of Defence. 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Redistribution subject to AIP license or copyright; see http://proceedings.aip.org/proceedings/cpcr.jsp CONTENTS Preface ....................................................................................xiii Committees.................................................................................xv Sponsors and Session Chairs.................................................................xvii DOPING PROCESSES IN SEMICONDUCTORS Germanium ... The Semiconductor of Tomorrow! .................................................3 A.R.Peaker,A.Satta,V.P.Markevich,E.Simoen,andB.Hamilton The Role of Ion Beam Technology in the Development of Integrated Optical Monitors Suitable forApplications in Silicon Photonics.............................................................9 A.P.Knights,J.D.B.Bradley,P.J.Foster,S.H.Gou,andP.E.Jessop Influence of Energy Contamination at S(cid:213)D-Extension Dopant Implantation Using Ultra Fast Annealing ..................................................................................13 M.Herden,D.Gehre,T.Feudel,andL.Herrmann Formation of Ultrashallow Junctions Less than 10nm with the Combination of Low Energy B Ion Implantation and LaserAnnealing..........................................................17 R.Yamada,S.Seto,S.Sato,Y.Tanaka,S.Matumoto,T.Suzuki,G.Fuse,T.Kudo,andS.Sakuragi Impact of Fluorine Co-Implant on Boron Diffusion during Non-Melt LaserAnnealing.................21 T.Noda,S.Felch,V.Parihar,C.Vrancken,T.Janssens,H.Bender,B.VanDaele,andW.Vandervorst Characterization of B H Plasma Doping for Converted p¿ Poly-Si Gate ............................25 2 6 J.-G.Oh,J.K.Lee,S.H.Hwang,H.J.Cho,Y.S.Sohn,D.S.Sheen,S.H.Pyi,S.W.Lee,S.H.Hahn, Y.B.Jeon,Z.Fang,andV.Singh Fluorine Profile Distortion uponAnnealing by the Presence of a CVD Grown Boron Box..............29 P.Lo´pez,L.Pelaz,R.Duffy,P.Meunier-Beillard,K.vanderTak,F.Roozeboom,andG.Maas Deactivation of Low Energy Boron Implants into Preamorphised Si after Non-Melt Laser Annealing with Multiple Scans ................................................................33 J.A.Sharp,N.E.B.Cowern,R.P.Webb,D.Giubertoni,S.Gennaro,M.Bersani,M.A.Foad,and K.J.Kirkby Co-Implantation for 45 nm PMOS and NMOS Source-Drain Extension Formation: Device Characterisation Down to 30 nm Physical Gate Length ...........................................37 E.J.H.Collart,B.J.Pawlak,R.Duffy,E.Augendre,S.Severi,T.Janssens,P.Absil,W.Vandervorst, S.Felch,R.Scheutelkamp,andN.E.B.Cowern Control of Phosphorus Transient Enhanced Diffusion Using Co-Implantation ........................41 A.Vanderpool,A.Budrevich,andM.Taylor Integration ofAdvanced Source and Drain Extension Process Using Carbon(cid:213)Fluorine Co-Implants and SpikeAnneal in 65nm PMOS Devices...........................................46 C.I.Li,H.Y.Wang,C.C.Chien,M.Chain,C.L.Yang,S.F.Tzou,H.Graoui,M.A.Foad,andR.Ting Controlling Dopant Diffusion andActivation through Surface Chemistry............................50 K.Dev,C.T.M.Kwok,R.Vaidyanathan,R.D.Braatz,andE.Seebauer Strain-EnhancedActivation of Sb Ultrashallow Junctions .........................................54 N.S.Bennett,L.O’Reilly,A.J.Smith,R.M.Gwilliam,P.J.McNally,N.E.B.Cowern,andB.J.Sealy Phosphorus Implant for S(cid:213)D Extension Formation: Diffusion andActivation Study after Spacer and SpikeAnneal .....................................................................58 S.H.Yeong,B.Colombeau,F.Benistant,M.P.Srinivasan,C.P.A.Mulcahy,P.S.Lee,andL.Chan The Concept of LDSI Locally-Differentiated-Scanning Ion Implantation for the Fine (cid:132) (cid:133) Threshold Voltage Control in Nano-Scale FETs ..................................................62 M.-Y.Lee,S.W.Jin,Y.S.Sohn,S.K.Na,K.B.Rouh,Y.S.Joung,Y.J.Ki,I.K.Han,Y.W.Song, andS.W.Park Time Dependence Study of Hydrogen-Induced Defects in Silicon during ThermalAnneals .............65 S.Personnic,A.Tauzin,K.K.Bourdelle,F.Leterte,N.Kernevez,F.Laugier,N.Cherkashin,A.Claverie, andR.Fortunier LayerTransfer of SOI Structures Using a Pre-Stressed Bonding Layer..............................69 L.VorradaandN.Cheung v Downloaded 28 Aug 2009 to 41.225.183.34. Redistribution subject to AIP license or copyright; see http://proceedings.aip.org/proceedings/cpcr.jsp Optimal Preamorphization Conditions for the Formation of HighlyActivated Ultra Shallow Junctions in Silicon-On-Insulator ..............................................................73 J.J.Hamilton,E.J.H.Collart,M.Bersani,D.Giubertoni,S.Gennaro,N.S.Bennett,N.E.B.Cowern, andK.J.Kirkby Ion Implantation:AWorld of Innovations.......................................................76 M.Bruel Junction Stability of B Doped Layers in SOI Formed with Optimized Vacancy Engineering Implants....................................................................................84 A.J.Smith,N.E.B.Cowern,B.Colombeau,R.Gwilliam,B.J.Sealy,E.J.H.Collart,S.Gennaro, D.Giubertoni,M.Bersani,andM.Barozzi Effects of HydrogenAtoms on Redistribution of Implanted BoronAtoms in Silicon during Annealing ..................................................................................88 K.Yokota,S.Nakase,andF.Miyashita Investigation ofAmorphous Layer Formation UsingApplied QUANTUM X Single Wafer and QUANTUM Batch Implanter..................................................................92 R.Doherty,B.McComb,R.Ting,andY.C.Cheng High DopantActivation and Low Damage P¿ USJ Formation.....................................96 J.Borland,S.Shishiguchi,A.Mineji,W.Krull,D.Jacobson,M.Tanjyo,W.Lerch,S.Paul,J.Gelpey, S.McCoy,J.Venturini,M.Current,V.Faifer,R.Hillard,M.Benjamin,T.Walker,A.Buczkowski,Z.Li, andJ.Chen AStudy of Carbon Effects in Implantation Process for Non-Silicide Contact Formation ..............101 T.H.Huh,S.Kim,G.J.Ra,R.N.Reece,S.I.Kondratenko,Y.S.Kim,K.I.Shin,andW.H.Jeon Pre-Annealing Effects of n¿(cid:213)p and p¿(cid:213)n Junction Formed by Plasma Doping PLAD and (cid:132) (cid:133) LaserAnnealing............................................................................105 S.Heo,S.Baek,D.Lee,M.Hasan,andH.Hwang SpikeAnnealing of ShallowArsenic and Phosphorous Implants in Different GaseousAmbient.........109 S.Paul,W.Lerch,andD.Bolze The Effect of FlashAnnealing on the Electrical Properties of Indium(cid:213)Carbon Co-Implants in Silicon.....................................................................................113 S.Gennaro,D.Giubertoni,M.Bersani,J.Foggiato,W.S.Yoo,R.Gwilliam,andM.Anderle LocalArsenic Structure in Shallow Implants in Si Following SPER:An EXAFS and MEIS Study .....................................................................................117 G.Pepponi,D.Giubertoni,S.Gennaro,M.Bersani,M.Anderle,R.Grisenti,M.Werner,andJ.A.Van DenBerg Well Design in a Bulk CMOS Technology with Low Mask Count..................................121 M.P.M.Jank,C.Kandziora,L.Frey,andH.Ryssel Boron Redistribution during Crystallization of Phosphorous-DopedAmorphous Silicon...............125 R.Simola,D.Mangelinck,A.Portavoce,J.Bernardini,andP.Fornara Ultra-Shallow Junctions Formed by Sub-Melt LaserAnnealing....................................129 S.B.Felch,A.Falepin,S.Severi,E.Augendre,T.Hoffman,T.Noda,V.Parihar,F.Nouri, andR.Schreutelkamp Defect Behavior in Bf Implants for S(cid:213)DApplications as a Function of Ion Beam 2 Characteristics .............................................................................133 N.Cagnat,C.Laviron,N.Auriac,J.Liu,S.Mehta,L.Frioulaud,andD.Mathiot Impact of Dose Rate Effects and Damage Engineering On Device Performance......................137 K.Shim,Y.Hwang,Y.Lee,J.An,S.Ryu,S.Hahn,C.Cho,N.Hur,B.Guo,J.Liu,andY.Erokhin Germanium Ion Implantation to Improve Crystallinity during Solid Phase Epitaxy and the Effect ofAMU Contamination................................................................140 K.S.Lee,D.H.Yoo,G.H.Son,C.H.Lee,J.H.Noh,J.J.Han,Y.S.Yu,Y.W.Hyung,J.K.Yang, D.G.Song,T.J.Lim,Y.K.Kim,S.C.Lee,H.D.Lee,andJ.T.Moon CLUSTER IMPLANTATIONAND DOPING 20Years History of Fundamental Research on Gas Cluster Ion Beams, and Current Status of theApplication to Industry...................................................................147 I.Yamada vi Downloaded 28 Aug 2009 to 41.225.183.34. Redistribution subject to AIP license or copyright; see http://proceedings.aip.org/proceedings/cpcr.jsp Dose Retention Effects inAtomic Boron and ClusterBoron™ B H Implant Processes .............155 (cid:132) 18 22(cid:133) M.A.Harris,L.Rubin,D.Tieger,V.Venezia,T.J.Hsieh,J.Miranda,andD.Jacobson Universal Ion Source™ for Cluster and Monomer Implantation...................................159 T.N.Horsky Investigation of Converted p1 Poly-Si Gate Formed by B H ¿ Cluster Ion Implantation.............163 18 X S.-H.Hwang,D.S.Kim,Y.H.Joo,J.G.Oh,J.K.Lee,T.W.Jung,H.J.Cho,Y.S.Sohn,D.S.Sheen, S.H.Pyi,S.Kim,T.H.Huh,W.A.Krull,andH.T.Cho ABeam Line System for a Commercial Borohydride Ion Implanter................................167 H.F.Glavish,T.N.Horsky,D.C.Jacobson,F.Sinclair,N.Hamamoto,N.Nagai,andM.Naito Ultrashallow P¿(cid:213)n Junction Formed by B H ¿ Ion Implantation and Excimer Laser 18 22 Annealing .................................................................................171 S.Heo,D.Lee,H.T.Cho,W.A.Krull,andH.Hwang Productivity Enhancements for Shallow Junctions and DRAMApplications Using Infusion Doping....................................................................................174 J.Hautala,M.Gwinn,W.Skinner,andY.Shao AVaporizer for Decaborane and Octadecaborane ...............................................178 D.Adams,T.N.Horsky,G.Gilchrist,R.Milgate,J.Sweeney,andP.Marganski Simplifying the 45nm SDE Process with ClusterBoron® and ClusterCarbon™ Implantation...........182 W.Krull,B.Haslam,T.N.Horsky,K.Verheyden,andK.Funk Implantation Characteristics by Boron Cluster Ion Implantation ..................................186 T.Nagayama,N.Hamamoto,S.Umisedo,M.Tanjyo,andT.Aoyama Sputtering and Chemical Modification of Solid Surfaces by Water Cluster Ion Beams................190 G.H.Takaoka,K.Nakayama,D.Takeda,andM.Kawashita Cross-Sectional TEM Observations of Si Wafers Irradiated with Gas Cluster Ion Beams .............194 H.Isogai,E.Toyoda,T.Senda,K.Izunome,K.Kashima,N.Toyoda,andI.Yamada Boron Beam Performance and in-situ Cleaning of the ClusterIon™ Source .........................198 T.N.Horsky,G.F.R.Gilchrist,andR.W.MilgateIII P-Type Gate Electrode Formation Using B H Ion Implantation .................................202 18 22 D.Henke,F.Jakubowski,J.Deichler,V.C.Venezia,M.S.Ameen,andM.A.Harris ClusterBoron™ Implants on a High Current Implanter..........................................206 D.R.Tieger,W.DiVergilio,E.C.Eisner,M.Harris,T.J.Hsieh,J.Miranda,W.P.Reynolds, andT.N.Horsky Cluster Size Effects of Gas Cluster Ion Beams on Surface Modification.............................210 N.ToyodaandI.Yamada High-Speed Nano-Processing with Cluster Ion Beams............................................214 T.SekiandJ.Matsuo Characterization of Molecular Clusters in the Supersonic Gas Jet .................................218 T.Kagawa,F.Sato,Y.Kato,Y.Ito,andT.Iida PIIIAND PLASMADOPING PLAsma Doping for P¿ Junction Formation in 90 nm NOR Flash Memory Technology..............225 D.Bigarella,V.Soncini,D.Raj,V.Singh,andS.Walther Deep Trench Doping by Plasma Immersion Ion Implantation in Silicon ............................229 S.Nizou,V.Vervisch,H.Etienne,M.Ziti,F.Torregrosa,L.Roux,M.Roy,andD.Alquier Nitrogen Plasma Ion Implantation ofAl and TiAlloys in the High Voltage Glow Discharge Mode .....................................................................................233 R.M.Oliveira,M.Ueda,J.O.Rossi,H.Reuther,C.M.Lepienski,andA.F.Beloto Plasma Immersion Ion Implantation with a 4kV(cid:213)10kHz Compact High Voltage Pulser................237 M.Ueda,R.M.Oliveira,J.O.Rossi,H.Reuther,andG.Silva Effects of Ion Energy on Nitrogen Plasma Immersion Ion Implantation in UHMWPE Polymer through a Metal Grid .......................................................................241 M.Ueda,R.M.Oliveira,J.O.Rossi,C.M.Lepienski,andW.A.Vilela Modified Phasor-Particle Model of Treating a Blocking Capacitor as a Phasor Element in Simulation of Plasma Coupling with an ExternalAuto-Matching Network..........................245 D.T.K.KwokandP.K.Chu vii Downloaded 28 Aug 2009 to 41.225.183.34. Redistribution subject to AIP license or copyright; see http://proceedings.aip.org/proceedings/cpcr.jsp B H PLAD Doped PMOS Device Performance.................................................249 2 6 Z.Fang,T.Miller,E.Winder,H.Persing,E.Arevalo,A.Gupta,T.Parrill,V.Singh,S.Qin, andA.McTeer Plasma Immersion Ion ImplantationApplied to P¿N Junction Solar Cells..........................253 V.Vervisch,D.Barakel,F.Torregrosa,L.Ottaviani,andM.Pasquinelli Ion Behaviour in Pulsed Plasma Regime by Means of Time-Resolved Energy Mass Spectroscopy TREMS Applied to an Industrial Radiofrequency Plasma Immersion Ion (cid:132) (cid:133) Implanter: PULSION® ......................................................................257 M.Carrere,F.Torregrosa,andV.Kaeppelin Boron Ion Implantation into Silicon by Use of the Boron Vacuum-Arc Plasma Generator.............261 J.M.Williams,C.C.Klepper,D.J.Chivers,R.C.Hazelton,J.J.Moschella,andM.D.Keitz MATERIALS—NOVELTECHNIQUESANDAPPLICATIONS Micro-Patterned Porous Silicon Using Proton Beam Writing......................................269 M.B.H.Breese,D.Mangaiyarkarasi,E.J.Teo,A.A.Bettiol,andD.Blackwood Grazing IncidenceAngle X-Ray Diffraction of Implanted Stainless Steel: Comparison between Simulated Data and Experimental Data........................................................275 J.Dudognon,M.Vayer,A.Pineau,andR.Erre Investigation of the Impact on Device Parameters of Fluorine Enhanced Oxide in a Power Trench MOSFET...........................................................................279 J.H.RiceandC.-T.Wu Rare Gas Ion Implanted-Silicon Template for the Growth of Relaxed Si Ge (cid:213)Si 100 ...............283 1-x x (cid:132) (cid:133) G.Regula,M.Raissi,J.-L.Lazzari,F.Chevrier,N.Burle,andE.Ntsoenzok High Temperature Implantation ofAluminum in 4H Silicon Carbide...............................287 M.Rambach,A.J.Bauer,andH.Ryssel Annealing of TiO Films Deposited on Si by Irradiating Nitrogen Ion Beams........................291 2 K.Yokota,Y.Yano,andF.Miyashita Thermal Diffusion Barrier forAgAtoms Implanted in Silicon Dioxide Layer on Silicon Substrate and Monolayer Formation of Nanoparticles ...........................................295 H.Tsuji,N.Arai,N.Gotoh,T.Minotani,T.Ishibashi,T.Okumine,K.Adachi,H.Kotaki,Y.Gotoh, andJ.Ishikawa Water Splitting and Hydrogen Emitting Catalytic Function of Hydrogen-Implanted Oxide Ceramics Studied Using Ion Beam Technology..................................................300 K.Morita,B.Tsuchiya,S.Nagata,K.Katahira,M.Yoshino,J.Yuhara,Y.Arita,T.Ishijima,andH.Sugai Structural Changes in Polymer Films by Fast Ion Implantation ...................................304 M.A.Parada,R.A.Minamisawa,C.Muntele,I.Muntele,A.DeAlmeida,andD.Ila Hydrogen Ion Implantation Mechanism in GaAs-on-InsulatorWafer Formation by Ion-Cut Process....................................................................................308 H.J.Woo,H.W.Choi,G.D.Kim,J.K.Kim,W.Hong,andH.R.Lee High Dose Hydrogen Implant Blistering Effects as a Function of Selected Implanter and Substrate Conditions........................................................................313 R.Eddy,C.Hudak,P.Bettincurt,andS.Delgado Germanium Nanoparticle Formation into Thin SiO Films by Negative Ion Implantation and 2 Their Electric Characteristics ................................................................317 N.Arai,H.Tsuji,N.Gotoh,T.Okumine,T.Yanagitani,M.Harada,T.Satoh,H.Ohnishi,T.Minotani, K.Adachi,H.Kotaki,T.Ishibashi,Y.Gotoh,andJ.Ishikawa SizeAnalysis of Ethanol Cluster Ions and Their Sputtering Effects on Solid Surfaces.................321 G.H.Takaoka,K.Nakayama,T.Okada,andM.Kawashita Tuning of Etching Rate by Implantation: Silicon, Polysilicon and Oxide............................325 R.CharavelandJ.-P.Raskin The Influence of Ion Implantation on CellAttachment to Glass Polymeric Carbon...................329 R.Zimmerman,I.Gurhan,F.Ozdal-Kurt,B.H.Sen,M.Rodrigues,andD.Ila viii Downloaded 28 Aug 2009 to 41.225.183.34. Redistribution subject to AIP license or copyright; see http://proceedings.aip.org/proceedings/cpcr.jsp IMPLANTTECHNOLOGY Chicane Deceleration—An Innovative Energy Contamination Control Technique in Low Energy Ion Implantation.....................................................................335 N.White,J.Chen,C.Mulcahy,S.Biswas,andR.Gwilliam Characterisation of the Beam Plasma in High Current, Low Energy Ion Beams for Implanters........340 J.Fiala,D.G.Armour,J.A.vandenBerg,A.J.T.Holmes,R.D.Goldberg,andE.H.J.Collart Next Generation Medium Current Product: VIISta 900XP .......................................345 A.Renau ImplantAngle Control on Optima MD ........................................................349 R.D.Rathmell,B.Vanderberg,A.M.Ray,D.E.Kamenitsa,M.Harris,andK.Wu Process Transferability from a Spot Beam to a Ribbon Beam Implanter: CMOS Device Matching..................................................................................353 V.Kaeppelin,Z.Chalupa,L.Frioulaud,S.Mehta,B.Guo,K.-H.Shim,H.Lendzian,andY.Erokhin Application of Stencil Mask Ion Implantation Technology to Power Semiconductors .................357 T.Nishiwaki,H.Saito,K.Hamada,K.Tonari,andT.Nishihashi Ion Implanter Cross Contamination and Maintenance Safety Considerations with High Dose Phosphorus................................................................................361 R.Eddy,B.Ostrowski,M.H.Yang,andD.Huntington Source Life Improvement for Germanium Implant..............................................365 A.Allen,P.Banks,S.Biswas,andC.Mulcahy Ion Sources for High and Low Energy Extremes of Ion Implantation ..............................369 A.Hershcovitch,V.A.Batalin,A.S.Bugaev,V.I.Gushenets,B.M.Johnson,A.A.Kolomiets, G.N.Kropachev,R.P.Kuibeda,T.V.Kulevoy,I.V.Litovko,E.S.Masunov,E.M.Oks,V.I.Pershin, S.V.Petrenko,S.M.Polozov,H.J.Poole,I.Rudskoy,D.N.Seleznev,P.A.Storozhenko, A.Ya.Svarovski,andG.Yu.Yushkov An Electron Cyclotron Resonance Ion Source with Cylindrically Comb-Shaped Magnetic Field Configuration ..............................................................................373 Y.Kato,H.Sasaki,T.Asaji,T.Kubo,F.Sato,andT.Iida Advantages of Dual Magnet Ribbon BeamArchitecture for Particle Control in Single Wafer High Current Implant.......................................................................377 C.Campbell,G.Redinbo,J.Blake,P.Kellerman,E.Moore,andN.Variam OptimizedAutotuning for Single Wafer High-Current and Medium-Current Implanters..............381 J.T.Scheuer,A.Cucchetti,M.Welsch,W.Callahan,K.Luey,andJ.C.Olson Backing Up Medium Current Implanters Using Single Wafer High Energy Implanter for Manufacturing Efficiency....................................................................385 H.L.Sun,W.Lee,K.Xu,H.Y.Tsun,K.T.Peng,L.S.Juang,andH.P.Tseng Rising Microwave Frequency of a Broad-Ion-Beam ECR Source with Cylindrically Comb-Shaped Magnetic Field Configuration....................................................389 T.Asaji,Y.Kato,H.Sasaki,T.Kubo,F.Sato,T.Iida,andJ.Saito Profile andAngle Measurement System of SHX.................................................393 Y.Kikuchi,M.Kabasawa,M.Tsukihara,andM.Sugitani ImplantAngle Deviation Reduction in Batch-Type High Energy Implanter .........................397 N.Suetsugu,T.Yamada,M.Tsukihara,andM.Sugitani Stencil Mask Ion Implantation Technology for RealisticApproach to Wafer Process..................401 K.Tonari,T.Nishihashi,M.Ishikawa,andJ.Fujiyama Enhanced Dosimetry for Single Wafer High-Current Implanters ..................................405 J.T.Scheuer,J.Dzengelaski,D.Distaso,D.Timberlake,J.Cummings,andJ.C.Olson Using Multiple Implant Regions to Reduce Development Wafer Usage .............................409 S.R.Walther,S.Falk,S.Mehta,Y.Erokhin,andP.Nunan Advanced Modeling Techniques forAnalysis of High Current Ribbon Beam Transport and Control................................................................................413 P.KellermanandF.Sinclair Increase of Beam Current Mass-Separated by Long Gap Dipole Sector Magnet for S(cid:213)D Process in FPD Manufacturing ...............................................................417 S.Dohi,Y.Ando,Y.Inouchi,Y.Matsuda,M.Konishi,J.Tatemachi,M.Nukayama,K.Nakao,K.Orihira, andM.Naito ix Downloaded 28 Aug 2009 to 41.225.183.34. 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