Insulated Gate Bipolar Transistor IGBT Theory and Design (Ieee Press Series on Microelectronic Systems) PDF
Preview Insulated Gate Bipolar Transistor IGBT Theory and Design (Ieee Press Series on Microelectronic Systems)
IGBT Theory and Design Vinod Kumar Khanna ‘THe INSULATED GATE BIPOTAR TRANSISTOR IGBT THEORY AND DESIGN: Seema Katupue: Eu hief -eousth Mone, Due a BEE Pee cattsnne Fatt, Soo een Par The cnt, crane Er ‘ania Ronen fos foe Fi Tun INSULATED GATT BIPOLAR TRANSISTOR IGBT THEORY AND DESIGN ‘Vinod Kumar Khanna IEEE IEEE PRESS WILEY: INTERSCIENCE AAJOHN WILEY SONS, IN, PUBLIGATION Cope Mt ts Ua escape ne pein nor Seton Hor To the TO Un tel Rane Capit Ace om Jane Si Sis Tre 17 River Ste, tka RUE, Ci) HA NB oy eal eo tl pt vi le St es Cs ary es tig ao To my daughtar Aloka, and my wife, Arta ‘My mother, Sm. Pustipa Khanna rl ry ath, Sti Ariamath Khana CONTENTS Pretace w 1 Power Device Evolution end the Advent of ISBT 1 LA Tomaduetory Backsnand 1 12 Trewin Gate Bipolar Transistor / 5 13. Advunuges and Sharecnmings af EBT. ¥ 1A KGB Serzeute and Fabvieation 712 15 Raguialent Cireoi Represenstons / 14 Lh Principe af Qaeration and Chatge-Contal Phenament 16 LF Girie Modeting / 17 18 Packaging Opcions fur (GBT / 2 19 Handi Procinions of IGHLs 25 110 IGRT Gate Driving Cicuits / 23 LIL AGHT Proteetioa / 2¢ L12 Sumesiry ama Lremus 28 Review Exeaves / 28 References / 29 2 IGRT Fundementals and Statue Review 5 22° Device Opecitional Modes / 23° Static Clnaulestis of IGE / 50 ZA Solseting Leister ot GBE / 5 25 Safe Operuing Ana SOAP / 72 2 Uigle temperature Opernion 7 83 23° Readininn Ffoos 7 88 8 oonrenrs 28 Trench Gate JGBT ond Injection Lhenced CET EET 7 x6 2. SeltCluped IGT / 89 210 Ratings and Applications of IGT / Ob 2.21 Sumy and Treads 7 94 Review Faesces / 95 Refsienoes / 97 ‘9. MOS Components of {GET 34 Gencrsh Cursideralous / 101 32 MOS Stew Auahsis sal Uheeshol Yelle / 207 13 Current- Vakage Charsctviais of MOSFET: Transanndactance ad Drain Resistance 119 SA ON-Resitaace Model of IMOSFRT and URMOSRET / 123 RS MOSFET Rquitslent Cit and Swiching Times 2-189 34 Safe Opsrating Atca (SOAP / 134 A} Nextioa saa Canney Damage Ribs #1 8A Thornal Bohasiey of MOSFET / 13 39. DMOSPET Coll Windnas and'Tonoogicel Designs / 13H 310. Summary und rend 7 1238 Review Laercives / 139 Kolereuses / 140 Appeadis 21: Derivation of Las (82a) and 3200/42 ‘Appendix 3.2: Derivation of ey.) / 142 ‘Appendix 3: esa o. tbe Livan oe Mlk Semcunducioe Potent! } and Uke Surlace (Change (a he Por 9 Leimsies ants See Inversion a Appendix 34; Dovialinn of Pap. G38 36) £147 Apponcin 3% Dorian of Fey GRIM) / 150 Sypendix 3a Tasrivation of Fa (2at8) 182 4 Bipolar Campanens of 1GAT Li PN Tunction Dade 7 15 42° PAN Rostifes / 172 3 ipolar uncon eansitse / 180 101 185 44 Tyytigon / 189 4 Jonetion Fold-Feet Transistor EET) / 18% 46 Sammariing Remarss 198 Review Frorticcs 198 Refecences 20 ‘Appeniis 4) Drill axl Ditiign Curren Densities 201 ‘Appendis 4.2. Lintein’s Eason / 208 Apptadis 43 Cuninty Faation and Tes Solrinn f 206 Appendix 44. Sohucan of the Coatinuley Pguation‘.t!) Pa Appendix 45 Deriatoa of Ba GAD / 212 Appendix 44° Clerhatinn of Cumem Densiy Equations 4.83 and (458) 2 205 Append 7 Treaster ‘Ceaninal Cartons [qe 13) and eam) 7 220 Appendix 4 Commonare Chvent Gain a Tey ea) / 225 Physiee and Modeling of (GET 229 51 PIN Revtiier-DMOSILT Medel of IGT / 231 52. Bipolar Fraueiwor-DMOSERY Mode! of IOBL sy stereo of PIN Rectifior-DMOSIEI Mocel 241 53 Bipolur Transiter-DMOSFLET Made! of KLE sith Device Chreuit menace / 54 Consluting Commeuts 280 Review Bawvives 7 261 Referees / 28 “Appendix 51 Soustion of Eq. (58) / 265 Appondi 52 Dereon af yp. (833) and (8.249 28 ‘Appeniln 5.4 Derivaion of By. (5359 7 288 ‘Appemlix $4 Denna jou of By. 6.38) Sclution uf Eq. 538) 7 288 Annendic $$ Thtivcion at Ras. (.AN.42) / ‘Annend 5 erivasion af Hq (384) 293 Appendix 3 Deration of Eys. 1589) acl Construcsion of Faquiatent Conductive Network (or ID Linear Flement / 297 a 5 Latchup of Parasite Thyrlstor In BT 61 lavoductun 7 305 62. Stalic Luching 7 306 63 Dynan Latching #38 64 Latching Prevestinn Meanures 7 317 65° Katchog Corcent Deusity of Trench-Cate IGE 7 3a 66 Summiting Remarks / M42 Review Exencies / 342 Reterenoes 3d Appenic 61. Payton (619) 7 5 Appendix 2 Equation (620) / M7 7 Resign Considerations of IGBT Unit Cell A Seniecadugta Seletion and Vertieal Structure Design 249 TGRT Tesign by Ansvtoal Calutetinns and Nurverial Siontaione 3 Opriniration of N-Fhfer Layer Strmerare 381 Fist Ring and Fick. Place Terminntion Design / 545, Surface TorTiplantet Figs Termination 394 Redhoud Surface Flcctrc Field (RESURF) Conospe fs Broakasnen Voltage Fahancersemt in tor lent 735 32 Coneloding Comments / 398 [Review Literises / 399 Relerences / AU ‘Appenuix 71 Mubipicaon Cueffiieul ae / 402 Apperdic 22 Fy Equation 400 [ApRens 7.3. Avalunehe Ureakdown Vella (V,) 7 404 ‘Appenlix 74 Puachthrough Voltage 7.) 7 08 Apgotlie ES Bley. /BVpp Raton 7106 8 IGBT Procees Design and Fabrication Technatogy KL Prose Soquerae Retinition / 412 2 Unir Pogess Steps. / 28 8A Plowos Tukey ane Stmularion / 143 sus sae an
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