III-Nitrides Light Emitting Diodes: Technology and Applications PDF
Preview III-Nitrides Light Emitting Diodes: Technology and Applications
Springer Series in Materials Science 306 Jinmin Li · Junxi Wang · Xiaoyan Yi · Zhiqiang Liu · Tongbo Wei · Jianchang Yan · Bin Xue III-Nitrides Light Emitting Diodes: Technology and Applications Springer Series in Materials Science Volume 306 SeriesEditors RobertHull,CenterforMaterials,Devices,andIntegratedSystems,Rensselaer PolytechnicInstitute,Troy,NY,USA ChennupatiJagadish,ResearchSchoolofPhysical,AustralianNationalUniversity, Canberra,ACT,Australia YoshiyukiKawazoe,CenterforComputationalMaterials,TohokuUniversity, Sendai,Japan JamieKruzic,SchoolofMechanical&ManufacturingEngineering, UNSWSydney,Sydney,NSW,Australia RichardM.Osgood,DepartmentofElectricalEngineering,ColumbiaUniversity, NewYork,USA JürgenParisi,UniversitätOldenburg,Oldenburg,Germany UdoW.Pohl,InstituteofSolidStatePhysics,TechnicalUniversityofBerlin, Berlin,Germany Tae-YeonSeong,DepartmentofMaterialsScience&Engineering, KoreaUniversity,Seoul,Korea(Republicof) Shin-ichiUchida,ElectronicsandManufacturing,NationalInstituteofAdvanced IndustrialScienceandTechnology,Tsukuba,Ibaraki,Japan ZhimingM.Wang,InstituteofFundamentalandFrontierSciences-Electronic, UniversityofElectronicScienceandTechnologyofChina,Chengdu,China The Springer Series in Materials Science covers the complete spectrum of mate- rialsresearchandtechnology,includingfundamentalprinciples,physicalproperties, materials theory, and design. Recognizing the increasing importance of materials scienceinfuturedevicetechnologies,thebooktitlesinthisseriesreflectthestate-of- the-artinunderstandingandcontrollingthestructureandpropertiesofallimportant classesofmaterials. Moreinformationaboutthisseriesathttp://www.springer.com/series/856 · · · Jinmin Li Junxi Wang Xiaoyan Yi · · · Zhiqiang Liu Tongbo Wei Jianchang Yan Bin Xue III-Nitrides Light Emitting Diodes: Technology and Applications Authors Seenextpage ISSN0933-033X ISSN2196-2812 (electronic) SpringerSeriesinMaterialsScience ISBN978-981-15-7948-6 ISBN978-981-15-7949-3 (eBook) https://doi.org/10.1007/978-981-15-7949-3 JointlypublishedwithSciencePress,Beijing,China TheprinteditionisnotforsaleinChinaMainland.CustomersfromChinaMainlandpleaseorderthe printbookfrom:SciencePress. 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The registered company address is: 152 Beach Road, #21-01/04 Gateway East, Singapore 189721, Singapore JinminLi JunxiWang TheStateKeyLaboratoryforSolidState TheStateKeyLaboratoryforSolidState Lighting,Beijing,China Lighting,Beijing,China CenterofMaterialsScience CenterofMaterialsScience andOptoelectronicsEngineering andOptoelectronicsEngineering UniversityofChineseAcademyofSciences UniversityofChineseAcademyofSciences Beijing,China Beijing,China InstituteofSemiconductors InstituteofSemiconductors ChineseAcademyofSciences ChineseAcademyofSciences Beijing,China Beijing,China XiaoyanYi ZhiqiangLiu TheStateKeyLaboratoryforSolidState TheStateKeyLaboratoryforSolidState Lighting,Beijing,China Lighting,Beijing,China CenterofMaterialsScience CenterofMaterialsScience andOptoelectronicsEngineering andOptoelectronicsEngineering UniversityofChineseAcademyofSciences UniversityofChineseAcademyofSciences Beijing,China Beijing,China InstituteofSemiconductors InstituteofSemiconductors ChineseAcademyofSciences ChineseAcademyofSciences Beijing,China Beijing,China TongboWei JianchangYan TheStateKeyLaboratoryforSolidState TheStateKeyLaboratoryforSolidState Lighting,Beijing,China Lighting,Beijing,China CenterofMaterialsScience CenterofMaterialsScience andOptoelectronicsEngineering andOptoelectronicsEngineering UniversityofChineseAcademyofSciences UniversityofChineseAcademyofSciences Beijing,China Beijing,China InstituteofSemiconductors InstituteofSemiconductors ChineseAcademyofSciences ChineseAcademyofSciences Beijing,China Beijing,China BinXue TheStateKeyLaboratoryforSolidState Lighting,Beijing,China InstituteofSemiconductors ChineseAcademyofSciences Beijing,China Preface GaN-basedhighbrightnessblueLightEmittingDiode(LED)marksthemilestone ofSolidStateLighting(SSL)developmentwhichexpandsabrand-newhorizonof illumination.SSLhasbecomeoneofthemostcompetitiveresearchfocusesworld- wide. When I was a senior visiting scholar to the USA between 2000 and 2002, I was impressed by the prototype of such device during a photonics exhibition. I realized that LEDs could lead revolution of artificial lighting. At the beginning of 2003,togetherwithmycolleagues,wemadeadraftofSSLresearchdevelopment planandreportedtotheChineseauthorityinordertoemphasizethesignificanceof developing III-nitridesbased LEDtechnology. Inthesameyear,Chinese Ministry of Science and Technology (MOST) launched the National SSL Project and three yearslater,SSLresearchanddevelopmentcenterofChineseAcademyofSciences (CAS) was established upon Institute of Semiconductors, CAS, where the authors areworking. Thanks to continuous support from the government through R&D funding and hardworking researchers, Chinese SSL technology has made tremendous progress infulltechnicalchain.IthaspromotedtheconstructionandimprovementofChinese SSLindustry.Thetechnologyhasbeensuccessfullyemployedinvariousimportant scenarios,suchasBeijingOlympics,ShanghaiExpo,etc.Theapplicationisagood demonstrationandenablesthepublicexperiencethefascinationofSSL. SSLtechnologyprogressisbasedonthetechnologybreakthroughinfundamental problemsofwidebandgapsemiconductormaterials.Improvementofmaterialquality and quantum efficiency is benefited from low temperature buffer layer and p-type doping technology. Doping mechanism and density are investigated and improved bystudyingfirstprinciplecalculation,whichenablestheperformanceenhancement of the devices. Although SSL products have been widely used in our daily life, performanceoftheseproductscanbefurtherimproved.Itisnecessarytostrengthen basicscientificresearchtoboostthedriveforceofSSLtechnology. FundamentalconceptandmaterialpropertyofIII-nitridesLEDsisdiscussedin Chaps.2and3.Basicconceptofmaterialgrowthandepitaxytechnology,concept of InGaN/GaN multiple-quantum-well-structured blue and green light emitting diodes,AlGaN/GaNmultiple-quantum-well-structuredvioletlightemittingdiodes vii viii Preface arepresentedinChaps.4–6.Quantumefficiencyenhancementtechnology,chipfabri- cation, packaging, reliability analysis, and application of LEDs are discussed in Chaps.7–12. Beijing,China JinminLi Acknowledgements I would like to express my deep gratitude to the respected Chinese academicians includingProfs.WangZhanguo,ZhouBingkun,GanZizhao,ZhengYoudou,Chen Lianghui,andXiaJianbaifortheircontinuousguidanceandcontribution.Iwouldlike totakethisopportunitytoexpressmyappreciationforcontinuoussupportfromthe MinistryofScienceandTechnologyofChina.Theconceptofthisbookisfulfilled by the research progress of my colleagues at CAS and their input is very much appreciated.ManythankstoDr.ZheLiu,Dr.HuaYang,Dr.YiyunZhang,Dr.YiLu, andDr.YangLi.Furthermore,IwanttoacknowledgeherethecontributionofProf. QuanxiJia(UniversityatBuffalo,theStateUniversityofNewYork),andthankhim forhissupportandfriendship. Idohopethisbookcouldprovideassistancetothosewhoareworkingorinterested insolidstatelighting. Beijing,China JinminLi ix Brief Introduction of This Book Theconceptofthisbookisbasedontheresearchprogressoftheauthorsandcovers academicandpracticalcontentofIII-nitridesbasedlightemittingdiodes,including epitaxygrowth,chipfabrication,packaging,andapplication.Thisbookconsistsof12 chapters,includingbasicprinciplesofIII-nitridesbasedlightemittingdiodes,mate- rialpropertyandepitaxytechnology,InGaN/GaNmultiple-quantum-well-structured blueandgreenlightemittingdiodes,AlGaN/GaNmultiple-quantum-well-structured violetlightemittingdiodes,quantumefficiencyenhancementtechnology,chipfabri- cationandpackagingtechnology,reliabilityandapplicationoflightemittingdiodes. Last but not least, cutting-edge and hot spots of III-nitrides based light emitting diodesresearchispresented. Thisbookwillbeofintereststoscientists,engineersworkingonLEDtechnology andapplications,andalsopostgraduatestudentsinrelatedsubjects. xi
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