High Voltage Low Distortion Current-Feedback OP Amps

53 Pages·2017·1.97 MB·English

THS3091, THS3095
SLOS423I – SEPTEMBER 2003 – REVISED DECEMBER 2022
THS309x High-Voltage, Low-Distortion, Current-Feedback Operational Amplifiers
1 Features 3 Description
• Low distortion: The THS3091 and THS3095 are high-voltage, low-
– 77-dBc HD2 at 10 MHz, R = 1 kΩ distortion, high-speed, current-feedback amplifiers
L
– 69-dBc HD3 at 10 MHz, R = 1 kΩ designed to operate over a wide supply range of
L
• Low noise: ±5 V to ±15 V for applications requiring large, linear
– 14-pA/√ Hz noninverting current noise output signals such as pin drivers, power FET drivers
– 17-pA/√ Hz inverting current noise & arbitrary waveform generators.
– 2-nV/√ Hz voltage noise The THS3095 features a power-down pin (PD) that
• High slew rate: 7300 V/μs (G = 5, VO = 20 VPP) puts the amplifier in low power standby mode, and
• Wide bandwidth: 210 MHz (G = 2, RL = 100 Ω) lowers the quiescent current from 9.5 mA to 500 μA.
• High output current drive: ±250 mA
• Wide supply range: ±5 V to ±15 V The wide supply range, combined with total harmonic
• Power-down feature: THS3095 only distortion as low as –69 dBc at 10 MHz, in addition
to the high slew rate of 7300 V/μs makes the
2 Applications
THS309x ideally suited for high-voltage arbitrary
• High-voltage arbitrary waveform generators waveform driver applications. Moreover, having the
• Power FET drivers ability to handle large voltage swings driving into
• Pin drivers high-resistance and high-capacitance loads while
• VDSL line drivers maintaining good settling time performance makes the
devices ideal for Pin driver and Power FET driver
applications.
The THS3091 and THS3095 are offered in an 8-pin
SOIC (D), and the 8-pin SOIC (DDA) packages with
PowerPAD™. The THS3091 is also offered in an
additional 8-pin HVSSOP (DGN) package.
Package Information(1)(3)
PART NUMBER PACKAGE BODY SIZE (NOM)
D (SOIC, 8) 4.90 mm × 3.91 mm
DDA
THS309x 4.89 mm × 3.90 mm
(SO PowerPAD, 8)
DGN (HVSSOP, 8)(2) 3.00 mm × 3.00 mm
(1) For all available packages, see the orderable addendum at
the end of the data sheet.
(2) Preview package
(3) See Device Comparison Table
−20
G=5,
+− THS3091 n−dBc −−4300 RRVSFL===1±101k05WWV,, VO=20VPP
o
DAIIOOCUU56TT8126 +− THS4271 +− THS3091 VOUT onic Distorti −−6500 VO=10VPP
m
Har −70 VO=5VPP
al
− Tot −80
+ VO=2VPP
THS3091 −90
Typical Arbitrary Waveform Generator Output 100k 1M 10M 100M
f−Frequency−Hz
Drive Circuit
Total Harmonic Distortion vs Frequency
An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectual property matters and other important disclaimers. UNLESS OTHERWISE NOTED, this document contains PRODUCTION
DATA.
THS3091, THS3095
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Table of Contents
1 Features............................................................................1 9 Application and Implementation..................................28
2 Applications.....................................................................1 9.1 Application Information.............................................28
3 Description.......................................................................1 9.2 Typical Application....................................................31
4 Revision History..............................................................2 10 Power Supply Recommendations..............................34
5 Device Comparison Table...............................................3 11 Layout...........................................................................34
6 Pin Configuration and Functions...................................4 11.1 Layout Guidelines...................................................34
7 Specifications..................................................................5 11.2 Layout Example......................................................35
7.1 Absolute Maximum Ratings........................................5 11.3 PowerPAD Design Considerations..........................37
7.2 ESD Ratings...............................................................5 11.4 PowerPAD Layout Considerations..........................38
7.3 Recommended Operating Conditions.........................5 11.5 Power Dissipation and Thermal Considerations.....39
7.4 Thermal Information....................................................5 12 Device and Documentation Support..........................40
7.5 Electrical Characteristics THS3091............................6 12.1 Device Support.......................................................40
7.6 Electrical Characteristics THS3095............................8 12.2 Documentation Support..........................................40
7.7 Dissipation Ratings Table..........................................12 12.3 Receiving Notification of Documentation Updates..40
7.8 Typical Characteristics (±15 V).................................13 12.4 Support Resources.................................................40
7.9 Typical Characteristics (±5 V)...................................20 12.5 Trademarks.............................................................40
8 Detailed Description......................................................24 12.6 Electrostatic Discharge Caution..............................40
8.1 Overview...................................................................24 12.7 Glossary..................................................................41
8.2 Feature Description...................................................24 13 Mechanical, Packaging, and Orderable
8.3 Device Functional Modes..........................................25 Information....................................................................41
4 Revision History
NOTE: Page numbers for previous revisions may differ from page numbers in the current version.
Changes from Revision H (October 2015) to Revision I (December 2022) Page
• Updated the numbering format for tables, figures, and cross-references throughout the document..................1
• Added the DGN package information to the data sheet.....................................................................................1
• Added the Device Comparison Table section.....................................................................................................3
• Updated Thermal Information table....................................................................................................................5
Changes from Revision G (February, 2007) to Revision H (October 2015) Page
• Added ESD Ratings table, Feature Description section, Device Functional Modes, Application and
Implementation section, Power Supply Recommendations section, Layout section, Device and
Documentation Support section, and Mechanical, Packaging, and Orderable Information section...................1
Changes from Revision F (February, 2007) to Revision G (February, 2007) Page
• Changed common-mode rejection ratio specifications from 78 dB (typ) to 69 dB (typ); from 68 dB at +25°C to
62 dB; from 65 dB at (0°C to +70°C) and (–40°C to +85°C) to 59 dB................................................................6
• Corrected load resistor value for output current specification (sourcing and sinking) from R = 40 Ω to R = 10
L L
Ω.........................................................................................................................................................................8
• Changed output current (sourcing) specifications from 200 mA (typ) to 180 mA (typ); from 160 mA at +25°C
to 140 mA; from 140 mA at (0°C to +70°C) and (–40°C to +85°C) to 120 mA...................................................8
• Corrected output current (sinking) specifications from 180 mA (typ) to –160 mA (typ); from 150 mA at +25°C
to –140 mA; from 125 mA at (0°C to +70°C) and (–40°C to +85°C) to –120 mA...............................................8
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5 Device Comparison Table
HD2/3, LINEAR
SSBW, MAXIMUM ICC INPUT NOISE
SUPPLY, V 10 V AT 50 MHz, SLEW RATE OUTPUT
DEVICE S A = 5 AT 25°C V PP
(V) V n G = 5 V/V (V/µs) CURRENT
(MHz) (mA) (nV/√ Hz)
(dBc) (mA)
THS3491 ±15 900 17.3 1.7 –76/–75 7100(1) ±420
THS3095 ±15 190 9.5 1.6 –40/–42 1200(2) ±250
THS3001 ±15 350 9 1.6 N/A 1400(3) ±120
THS3061 ±15 260 8.3 2.6 N/A 1060(4) ±140
(1) Slew rate from FPBW of 320 MHz, 10 V
PP
(2) Slew rate from FPBW of 135 MHz, 4 V
PP
(3) Slew rate from FPBW of 32 MHz, 20 V
PP
(4) Slew rate from FPBW of 120 MHz, 4 V
PP
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6 Pin Configuration and Functions
NC 1 8 NC REF 1 8 PD
VIN− 2 7 VS+ VIN− 2 7 VS+
VIN+ 3 6 VOUT VIN+ 3 6 VOUT
VS− 4 5 NC VS− 4 5 NC
Figure 6-1. D, DGN, or DDA Package, Figure 6-2. D or DDA Package,
8-Pin SOIC, HVSSOP, or SO-PowerPAD 8-Pin SOIC or SO-PowerPAD
THS3091 (Top View) THS3095 (Top View)
Table 6-1. Pin Functions
PIN
NO. TYPE(1) DESCRIPTION
NAME
THS3091 THS3095
NC 1, 5, 8 5 — No connection
Amplifier power down, LOW – Amplifier disabled, HIGH (default) – Amplifier
PD — 8 I
enabled
REF — 1 I Voltage reference input to set PD threshold level
V 6 6 O Output of amplifier
OUT
V 2 2 I Inverting input
IN-
V 3 3 I Noninverting input
IN+
V 4 4 POW Negative power supply
S–
V 7 7 POW Positive power supply
S+
(1) I= input, O = output, POW= power, and NC = no internal connection
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7 Specifications
7.1 Absolute Maximum Ratings
over operating free-air temperature range (unless otherwise noted)(1)
MIN MAX UNIT
V to V Supply voltage 33 V
S- S+
V Input voltage ±V
I S
V Differential input voltage 4 ±V
ID
I Output current 350 mA
O
Continuous power dissipation See Section 7.2
T Maximum junction temperature 150 °C
J
T (2) Maximum junction temperature, continuous operation, long-term reliability 125 °C
J
T Storage temperature –65 150 °C
stg
(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress
ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under
Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device
reliability.
(2) The maximum junction temperature for continuous operation is limited by package constraints. Operation above this temperature may
result in reduced reliability and/or lifetime of the device.
7.2 ESD Ratings
VALUE UNIT
Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001(1) ±2000
V Electrostatic discharge V
(ESD) Charged-device model (CDM), per JEDEC specification JESD22-C101(2) ±1500
(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.
7.3 Recommended Operating Conditions
over operating free-air temperature range (unless otherwise noted)
MIN NOM MAX UNIT
Dual supply ±5 ±15 ±16
Supply voltage V
Single supply 10 30 32
T Operating free-air temperature –40 85 °C
A
7.4 Thermal Information
THS309x
DDA
THERMAL METRIC(1) D (SOIC) DGN (HVSSOP) UNIT
(SO PowerPAD)
8 PINS 8 PINS 8 PINS
R Junction-to-ambient thermal resistance 113.5 51.8 60.4 °C/W
θJA
R Junction-to-case (top) thermal resistance 57.7 58.3 87.2 °C/W
θJC(top)
R Junction-to-board thermal resistance 54.2 32.3 32.6 °C/W
θJB
Junction-to-top characterization
ψ 11.5 12.2 7.8 °C/W
JT parameter
Junction-to-board characterization
ψ 53.7 32.2 32.6 °C/W
JB parameter
Junction-to-case (bottom) thermal
R n/a 7.8 17.0 °C/W
θJC(bot) resistance
(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application
report, SPRA953.
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7.5 Electrical Characteristics THS3091
V = ±15 V, R = 1.21 kΩ, R = 100 Ω, and G = 2 (unless otherwise noted)
S F L
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
AC PERFORMANCE
G = 1, RF = 1.78 kΩ, VO = 200 mVPP TA = 25°C 235
Small-signal bandwidth, –3 G = 2, RF = 1.21 kΩ, VO = 200 mVPP TA = 25°C 210
dB G = 5, RF = 1 kΩ, VO = 200 mVPP TA = 25°C 190
MHz
G = 10, RF = 866 Ω, VO = 200 mVPP TA = 25°C 180
0.1-dB Bandwidth flatness G = 2, RF = 1.21 kΩ, VO = 200 mVPP TA = 25°C 95
Large-signal bandwidth G = 5, RF = 1 kΩ , VO = 4 VPP TA = 25°C 135
G = 2, VO = 10-V step, RF = 1.21 kΩ TA = 25°C 5000
Slew rate (25% to 75% level) V/μs
G = 5, VO = 20-V step, RF = 1 kΩ TA = 25°C 7300
Rise and fall time G = 2, VO = 5-VPP, RF = 1.21 kΩ TA = 25°C 5 ns
Settling time to 0.1% G = –2, VO = 2 VPP step TA = 25°C 42
ns
Settling time to 0.01% G = –2, VO = 2 VPP step TA = 25°C 72
HARMONIC DISTORTION
RL = 100 Ω TA = 25°C 66
2nd Harmonic distortion
G = 2, RF = 1.21 kΩ, RL = 1 kΩ TA = 25°C 77 dBc
VO = 2 VPP, f = 10 MHz RL = 100 Ω TA = 25°C 74
3rd Harmonic distortion
RL = 1 kΩ TA = 25°C 69
Input voltage noise f > 10 kHz TA = 25°C 2 nV / √ Hz
Noninverting input current
noise f > 10 kHz TA = 25°C 14 pA / √ Hz
Inverting input current noise f > 10 kHz TA = 25°C 17 pA / √ Hz
NTSC TA = 25°C 0.013%
Differential gain
PAL TA = 25°C 0.011%
G = 2, RL = 150 Ω, RF = 1.21 kΩ
NTSC TA = 25°C 0.020°
Differential phase
PAL TA = 25°C 0.026°
DC PERFORMANCE
TA = 25°C 850
TA = 25°C 350
Transimpedance VO = ±7.5 V, Gain = 1 kΩ
TA = 0°C to 70°C 300
TA = –40°C to 85°C 300
TA = 25°C 0.9
TA= 25°C 3
Input offset voltage VCM = 0 V mV
TA = 0°C to 70°C 4
TA = –40°C to 85°C 4
TA = 0°C to 70°C ±10
Average offset voltage drift VCM = 0 V μV/°C
TA = –40°C to 85°C ±10
TA = 25°C 4
TA= 25°C 15
Noninverting input bias current VCM = 0 V μA
TA = 0°C to 70°C 20
TA = –40°C to 85°C 20
TA = 0°C to 70°C ±20
Average bias current drift VCM = 0 V nA/°C
TA = –40°C to 85°C ±20
TA = 25°C 3.5
TA= 25°C 15
Inverting input bias current VCM = 0 V μA
TA = 0°C to 70°C 20
–40°C to 85°C 20
TA = 0°C to 70°C ±20
Average bias current drift VCM = 0 V nA/°C
TA = –40°C to 85°C ±20
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7.5 Electrical Characteristics THS3091 (continued)
V = ±15 V, R = 1.21 kΩ, R = 100 Ω, and G = 2 (unless otherwise noted)
S F L
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
TA = 25°C 1.7
TA= 25°C 10
Input offset current VCM = 0 V μA
TA = 0°C to 70°C 15
TA = –40°C to 85°C 15
TA = 0°C to 70°C ±20
Average offset current drift VCM = 0 V nA/°C
TA = –40°C to 85°C ±20
INPUT CHARACTERISTICS
TA = 25°C ±13.6
TA= 25°C ±13.3
Common-mode input range V
TA = 0°C to 70°C ±13
TA = –40°C to 85°C ±13
TA = 25°C 69
TA= 25°C 62
Common-mode rejection ratio VCM = ±10 V dB
TA = 0°C to 70°C 59
TA = –40°C to 85°C 59
Noninverting input resistance TA = 25°C 1.3 MΩ
Noninverting input capacitance TA = 25°C 0.1 pF
Inverting input resistance TA = 25°C 30 Ω
Inverting input capacitance TA = 25°C 1.4 pF
OUTPUT CHARACTERISTICS
TA = 25°C ±13.2
TA = 25°C ±12.8
RL = 1 kΩ
TA = 0°C to 70°C ±12.5
TA = –40°C to 85°C ±12.5
Output voltage swing V
TA = 25°C ±12.5
TA= 25°C ±12.1
RL = 100 Ω
TA = 0°C to 70°C ±11.8
TA = –40°C to 85°C ±11.8
TA= 25°C 280
TA = 25°C 225
Output current (sourcing) RL = 40 Ω mA
TA = 0°C to 70°C 200
TA = –40°C to 85°C 200
TA = 25°C 250
TA= 25°C 200
Output current (sinking) RL = 40 Ω mA
TA = 0°C to 70°C 175
TA = –40°C to 85°C 175
Output impedance f = 1 MHz, Closed loop TA = 25°C 0.06 Ω
POWER SUPPLY
TA = 25°C ±15
TA= 25°C ±16
Specified operating voltage V
TA = 0°C to 70°C ±16
TA = –40°C to 85°C ±16
TA = 25°C 9.5
TA= 25°C 10.5
Maximum quiescent current mA
TA = 0°C to 70°C 11
TA = –40°C to 85°C 11
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7.5 Electrical Characteristics THS3091 (continued)
V = ±15 V, R = 1.21 kΩ, R = 100 Ω, and G = 2 (unless otherwise noted)
S F L
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
TA = 25°C 9.5
TA= 25°C 8.5
Minimum quiescent current mA
TA = 0°C to 70°C 8
TA = –40°C to 85°C 8
TA = 25°C 75
Power supply rejection TA= 25°C 70
(+PSRR) VS+ = 15.5 V to 14.5 V, VS– = 15 V TA = 0°C to 70°C 65 dB
TA = –40°C to 85°C 65
TA = 25°C 73
Power supply rejection (– TA= 25°C 68
PSRR) VS+ = 15 V, VS– = –15.5 V to –14.5 V TA = 0°C to 70°C 65 dB
TA = –40°C to 85°C 65
POWER-DOWN CHARACTERISTICS (THS3091 ONLY)
REF voltage range(1) TA = 25°C VS+ –4 V
TA = 25°C VS–
PD ≥ REF
Enable TA = 25°C +2
Power-down voltage level(1) V
PD ≤ REF
Disable TA = 25°C +.8
TA = 25°C 500
TA= 25°C 700
Power-down quiescent current PD = 0V μA
TA = 0°C to 70°C 800
TA = –40°C to 85°C 800
TA = 25°C 11
TA= 25°C 15
VPD = 0 V, REF = 0 V,
TA = 0°C to 70°C 20
TA = –40°C to 85°C 20
VPD quiescent current μA
TA = 25°C 11
TA= 25°C 15
VPD = 3.3 V, REF = 0 V
TA = 0°C to 70°C 20
TA = –40°C to 85°C 20
Turnon time delay 90% of final value TA = 25°C 60
μs
Turnoff time delay 10% of final value TA = 25°C 150
(1) For detailed information on the behavior of the power-down circuit, see the power-down functionality and power-down reference
sections in the Application Information section of this data sheet.
7.6 Electrical Characteristics THS3095
V = ±5 V, R = 1.15 kΩ, R = 100 Ω, and G = 2 (unless otherwise noted)
S F L
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
AC PERFORMANCE
G = 1, RF = 1.78 kΩ, VO = 200 mVPP TA= 25°C 190
G = 2, RF = 1.15 kΩ, VO = 200 mVPP TA= 25°C 180
Small-signal bandwidth, –3 dB
G = 5, RF = 1 kΩ, VO = 200 mVPP TA= 25°C 160
MHz
G = 10, RF = 866 Ω, VO = 200 mVPP TA= 25°C 150
0.1-dB Bandwidth flatness G = 2, RF = 1.15 kΩ, VO = 200 mVPP TA= 25°C 65
Large-signal bandwidth G = 2, RF = 1.15 kΩ , VO = 4 VPP TA= 25°C 160
G = 2, VO= 5-V step, RF = 1.21 kΩ TA= 25°C 1400
Slew rate (25% to 75% level) V/μs
G = 5, VO= 5-V step, RF = 1 kΩ TA= 25°C 1900
Rise and fall time G = 2, VO = 5-V step, RF = 1.21 kΩ TA= 25°C 5 ns
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7.6 Electrical Characteristics THS3095 (continued)
V = ±5 V, R = 1.15 kΩ, R = 100 Ω, and G = 2 (unless otherwise noted)
S F L
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
Settling time to 0.1% G = –2, VO = 2 VPP step TA= 25°C 35
ns
Settling time to 0.01% G = –2, VO = 2 VPP step TA= 25°C 73
HARMONIC DISTORTION
RL = 100 Ω TA = 25°C 77
2nd Harmonic distortion
G = 2, RF = 1.15 kΩ, RL = 1 kΩ TA = 25°C 73 dBc
VO = 2 VPP, f = 10 MHz RL = 100 Ω TA = 25°C 70
3rd Harmonic distortion
RL = 1 kΩ TA = 25°C 68
Input voltage noise f > 10 kHz TA = 25°C 2 nV / √ Hz
Noninverting input current noise f > 10 kHz TA = 25°C 14 pA / √ Hz
Inverting input current noise f > 10 kHz TA = 25°C 17 pA / √ Hz
NTSC TA = 25°C 0.027%
Differential gain
G = 2, RL = 150 Ω, PAL TA = 25°C 0.025%
RF = 1.15 kΩ NTSC TA = 25°C 0.04°
Differential phase
PAL TA = 25°C 0.05°
DC PERFORMANCE
TA = 25°C 700
TA= 25°C 250
Transimpedance VO = ±2.5 V, Gain = 1 kΩ
TA= 0°C to 70°C 200
TA= –40°C to 85°C 200
TA = 25°C 0.3
TA= 25°C 2
Input offset voltage VCM = 0 V TA= 0°C to 3 mV
70°C
TA= –40°C to 3
85°C
TA= 0°C to ±10
70°C
Average offset voltage drift VCM = 0 V μV/°C
TA= –40°C to ±10
85°C
TA = 25°C 2
TA= 25°C 15
Noninverting input bias current VCM = 0 V TA= 0°C to 20 μA
70°C
TA= –40°C to 20
85°C
TA= 0°C to ±20
70°C
Average bias current drift VCM = 0 V nA/°C
TA= –40°C to ±20
85°C
TA = 25°C 5
TA= 25°C 15
Inverting input bias current VCM = 0 V TA= 0°C to 20 μA
70°C
TA= –40°C to 20
85°C
TA= 0°C to ±20
70°C
Average bias current drift VCM = 0 V nA/°C
TA= –40°C to ±20
85°C
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7.6 Electrical Characteristics THS3095 (continued)
V = ±5 V, R = 1.15 kΩ, R = 100 Ω, and G = 2 (unless otherwise noted)
S F L
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
TA = 25°C 1
TA= 25°C 10
Input offset current VCM = 0 V TA= 0°C to 15 μA
70°C
TA= –40°C to 15
85°C
TA= 0°C to ±20
70°C
Average offset current drift VCM = 0 V nA/°C
TA= –40°C to ±20
85°C
INPUT CHARACTERISTICS
TA = 25°C ±3.6
TA= 25°C ±3.3
Common-mode input range TA= 0°C to ±3 V
70°C
TA= –40°C to ±3
85°C
TA = 25°C 66
TA= 25°C 60
Common-mode rejection ratio VCM = ±2.0 V, VO = 0 V TA= 0°C to 57 dB
70°C
TA= –40°C to 57
85°C
Noninverting input resistance TA = 25°C 1.1 MΩ
Noninverting input capacitance TA = 25°C 1.2 pF
Inverting input resistance TA = 25°C 32 Ω
Inverting input capacitance TA = 25°C 1.5 pF
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