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High-Temperature Superconducting Materials Science and Engineering. New Concepts and Technology PDF

481 Pages·1995·17.471 MB·English
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Preface We intend this book to provide an up-to-date introduction to the fascinating field of high-temperature superconductivity. The focus of the book is on the basic concepts and recent developments in the field, particularly in the areas of vortex-state properties, structure, synthesis and processing, phase equilibrium, defects characterization, thin films, conductor development, and applications. Most of the theoretical issues are addressed in a straightforward manner so that technical nonspecialists and university students can benefit from the information. Furthermore, many physical concepts in superconductivity are explained in light of current theories. This book is written for a large readership including university students and researchers from diverse backgrounds such as physics, materials science, engineering and chemistry. Both undergraduate and graduate students will find the book a valuable reference not only on superconductivity, but also on materials-related topics, including structure and phase diagrams of complex systems, novel ceramic and composite processing methods, thin film fabrication, and new materials-characterization techniques. In particular, this book gives a detailed introduction to experimental methods at low temperatures and high magnetic fields. Thus, it can serve as a comprehensive introduction to researchers in electromagnetic ceramics in general, and can also be used as a graduate-level text in superconductivity. The book devotes two chapters (Chapters 2 and 6) to cryogenic systems and low-temperature measurements. Detailed experimental procedures for both transport and magnetic measurements are presented at a level suitable for people with no previous training in these areas. The book systematically introduces cryogenics and low-temperature techniques specificallv for characterizing superconducting properties. Furthermore, the book inciudes numerous developments in magnetic property measurements of high-Tc superconductors by using SQUIDs, ac susceptometers and vibrating sample magnetometers. Recent developments in determining important superconducting parameters such as To Hc2, and cJ are presented in detail, providing essential information for researchers in the field. Chapters 2 and 6 are also valuable to beginners and technical nonspecialists in the study of superconductivity and in low-temperature measurements. Chapter 4 deals with vortex properties such as flux pinning, the Bean critical state, and flux creep. Although these concepts were introduced long ago, new vortex phenomena have been recently observed in high-Tc superconductors, requiring new and modified physical models to interpret them. For example, dynamic models including collective creep and Josephson coupling of bilayers of CuO plates have been developed to solve the flux motion problem. More fundamentally, flux avalanches observed near the critical state cannot be explained by traditional flux-creep models: Chapter 4 gives a detailed introduction to a new theory--self-organized criticality--for treating such vortex motion problems. Chapters ,6 7 and 8 should be of most interest to researchers in materials xi xii Preface processing. These chapters give detailed descrip.tions of many traditional and novel methods in synthesis and manufacture of ceramic materials with tailored microstructures and desired forms for practical applications. Recent research results in phase reactions, phase diagrams and heat treatment are presented for several high-Tc systems. In addition, Chapter 5 presents new characterization techniques using transmission electron microscopy, including the electron energy-loss spectrum method. With these highly advanced techniques, defect structures including tweeds, twin boundaries, grain boundaries, stacking faults and dislocations in high-To ceramics are studied in detail. In Chapter ,3 the crystal structure of various perovskites is introduced for most of the high-To superconductors. The effects of structural changes on superconductivity and oxygen-ordering behavior are analyzed and illustrated by means of various experiments. The last chapter concerns one of the most exciting aspects of superconductivity: applications. Although industrial and scientific applications of conventional superconductors have been well established for several decades, it is a challenging task to use high-Tc oxides at liquid nitrogen temperature. Microstructure control, reproducibility and grain boundary weak links are still challenges to be overcome. Nevertheless, the potential applications of high-Tc materials are certainly recognized in many areas such as power transmission lines, magnetic levitation and nuclear magnetic resonance. The field is young, offering researchers exciting opportunities to make a major contribution to science and technology. stnemgdelwonkcA eW thank all the authors for their enthusiasm, effort, cooperation and excellent contribution in their area of expertise. In particular, we acknowledge the superb technical editing work by Dr Gail Pieper of Argonne National Laboratory. It is impossible to even imagine the completion of this book without her participation in copyediting, proofreading, computer formatting and organizing this book. eW are also grateful to Dr Roger Poeppel and Dr Harold Myron of Argonne National Laboratory for their valuable suggestions during the production of this book. smynorcA A-H model Ambegaokar-Halperin model SCB theory Bardeen, Cooper and Schrieffer theory CBED Convergent beam electron diffraction CEBAF Continuous Electron BeamA ccelerator Facility CFC Continuous-flow cryostat CGR Carbon glass resistance CSL mode Coincidence site lattice model CCSL model Constrained coincidence site lattice model CMOS Complementary metal oxide semiconductor CSL Coincidence site lattice CVD Chemical vapor disposition CSD lattice vectors Displacement-shift-complete lattice vectors XDE Energy dispersive x-ray spectroscopy SLEE Electron energy-loss spectroscopy SFAXE Extended x-ray absorption fine structure FENIX Fusion Engineering International Experimental Magnet Facility FLL Flux line lattice GBD Grain boundary dislocation G-L Ginzburg-Landau grp Glass-reinforced plastic HAGB High-angle grain boundary HEMT High-electron mobility transistors HREM High-resolution electron microscopy HRTEM High-resolution transmission electron microscopy HTF High-temperature ferroelectrics HTS High-temperature superconductor IR Irreversibility line ITER International Thermonuclear Experimental Reactor LAGB Low-angle grain boundary LCT Large Coil Task LHC Large Hadron Collider STL Low-temperature superconductor xiii xiv smynorcA MHD Magnetohydrodynamics MOCVD Metal-organic chemical vapor deposition MOD Metal-organic deposition MPMG Melt-powder-melt-growth MRI Magnetic resonance imaging MTG Melt-texture growth NMR Nuclear magnetic resonance OPIT Oxide powder-in-tube OSHA Occupational Safety and Health Administration PDMG Platinum-doped melt-growth PIT Powder-in-tube PLD Pulsed laser deposition PMP Powder-melt process TRP Platinum resistance thermometer QMG Quench-and-melt-growth RPC Resonant pinning center SBGP model Sommerfeld-Bloch-Gruneisen-Peierls model TFFS Superconducting flux flow transistor SIS Superconductor-insulator-superconductor SLMG Solid-liquid-melt-growth SEMS Superconducting Magnetic Energy Storage SNS Superconductor-normal metal-superconductor SOC Self-organized criticality SQUID Superconducting quantum interference device CSS Superconducting Super Collider SUM Structural unit model FFAT Thermally assisted flux flow TEM Transmission electron microscopy J-T Tinkham-Josephson ISLV Very large scale integration MSV Vibrating sample magnetometry ITV Variable-temperature insert ZSY Yttria-stabilized zirconia High-Temperature Superconductivity ni the Layered Cuprates: An Overview J. C. Phillips 1.1 Crystal ChemistrymStructure and Function: Why era Layered Cuprates so Special? In the past seven years, more than 35,000 research papers have appeared on the subject of high-temperature superconductivity, with special emphasis on the layered cuprates. The latter have evolved as layered multinary oxides with pseudoperovskite structures from the cubic (Ba, Pb, Bi) oxide perovskite superconductors, which in turn evolved from the cubic Chevrel chalcogenide cluster compounds. Their crystal chemistry is just as different from that of intermetallic compounds (such as Nb3Sn) as their transition temperatures (about ten times larger), and it is clear that their novel crystal chemistry is the origin of their novel superconductive properties. One of the central themes of this chapter (and indeed of other chapters as well) is this close relationship, which has many ramifications, not only conceptually, but also technologically, for processing these materials to obtain desirable properties. The simplest and most general way to analyze crystal chemistry is to discuss size and electronegativity differences together with average valences. The latter present no problem for any number of elements, but there are many different definitions of the former, even for binary cases, and until quite recently all seemed to have virtues in some cases and weaknesses in others. It was, moreover, not clear that the binary definitions of differences could be extended to multinary cases. Rabe et al., however, have recently shown that a recipe does exist that organizes the entire crystallographic data base with a success level higher than 95% for simple, common binary compounds. When this recipe is applied to complex novel compounds, diagrams of the sort shown in Fig- ure 1.1 emerge [1]. When we examine Figure 1.1, we see that three kinds of complex, margin- ally stable materials form small islands on the diagram. The three kinds are stable quasi-crystals, high-Tc (> 500 K) ferroelectrics (HTF), and high-Tc (> 10 K) superconductors (HTS). Because so many ferroelectrics have the BaTiO3 cubic perovskite structure, we are not surprised to see that the HTS oxide island is adjacent to (but does not overlap) the HTF island. On the opposite side of the HTF oxide island is the HTS chalcogenide (Chevrel) island. Thus, while the average electronegative difference AXI I between cations and an- 2 erutarepmeT-hgiH Superconductivity ni eht dereyaL setarpuC Fig. 1.1. A schematic summary of the domains of marginally unstable lattices with special physical properties, adopted from ]1[ in terms of average multinary size ~R and electronegativity XA differences. The dashed boundary denotes the region spanned by binary alloys, the dotted boundary that spanned by known ternary and multinary alloys. Here Q denotes stable quasi-crystals, and F denotes stable ferroelectrics with > c T 005 .K There are four superconductive domains ,S with T > .0K1 Domain 1 S includes primarily compounds such as Nb3Sn with the 51A structure. Domain 2 S includes binary compounds, primarily NbC and NbN (rock salt structure). Domain is 3 S the Chevrel compounds, while is 4 S primarily the layered cuprates. Note how F straddles 3 S and S .4 ions is muchlarger in the oxides than in the chalcogenides, ee_ht average size difference, AR is much the same. This average size difference AR is about half that found in binary HTS such as NbN. This may be the reason why the anionic (oxide and chalcogenide) HTS can form in spite of the packing problems characteristic of perovskite and related structures. What do we mean when we say that there are packing problems in the perovskite structure ABO3? We mean that there is only one lattice parameter (the cubic lattice constant [a]) which can be adjusted to reduce strain ener- gies, but there are two bond lengths, A-O and B-O, which would like to have certain "natural" (or binary) values. (In the crystal chemical literature these "natural" lattice constants <ai> are sometimes called prototypical.) Similarly, .J C. Phillips 3 for the layered pseudoperovskites one can speak of prototypical lattice con- stants <bi> for each layer. The condition for the formation of layered cuprates is that the prototypical planar square lattice constants <bi> be nearly equal to b for CuO2 planes for all layers i, even in parent compounds that contain no CuO2 planes, such as Bi4Ti3012 and Bi2Mo(W)O6. In fact, through knowledge of b in the parent compounds, one would be led to discover the Bi- and Tl-based cuprates 1. The actual values of a or b would appear to be a compromise between the values <ai> or <hi>, but this is not the whole story. Interplanar strain energies can be reduced by the presence of a certain concentration of native defects in each plane i, such as anionic vacancies and interstitials, which may be partially aggregated or ordered. The concentration and spatial distribution of such defects can be optimized for superconductive properties by suitable processing, as described elsewhere in this book. In the case of the cuprates, this processing is especially easy because of the high oxygen mobilities, second only to a few materials (such as ZrO2) used commercially as oxygen getters in high-temperature glass processing (T > 103~ The high oxygen mobilities suggest small activation energies for diffusion, and these are related to the high densities of oxygen vacancies and/or interstitials, together with the resonant states associated with these electronic defects. We thus believe that it is no accident that the normal-state and superconductive properties of the layered cuprates are so sensitive to processing. Any theory of these properties should recognize and discuss the role of such defects if it is to be considered more than a logical tautology. We pause at this point to discuss the extent to which electrically active defects can be observed in complex crystals. There have been a great many diffraction studies of cuprates, and many defects have been observed, either directly or indirectly, from the static broadening of diffraction patterns and the large R values which imply a high defect concentration. In such complex materials one can expect to find many defects, only a few of which are elec- trically active and which are associated directly with superconductivity. For this reason, only a few diffraction experiments have succeeded in obtaining direct evidence relating defects to superconductivity. These have involved very carefully prepared samples where phase separation into ordered and disordered regions has taken place 2,3. As shown in Figure 1.2, channeling experiments have also revealed structural changes at cT not observable by neutron diffraction 4,5. In any case, it is important to recognize that although direct structural evidence for superconductive coupling to defects is difficult to obtain, this problem arises because in such complex materials the back- ground "noise" level is high (large R values). There have been some cases in which this problem has been overcome, and these carry much more weight than the many routine structural studies that have failed to identify such coupling as a result of poor sample quality or inadequate resolution. We see, then, that part of the practical answer to what makes the cuprates so special is prosaic high oxygen mobilities, not mysterious and magical many-electron interactions. In many respects the high oxygen mobilities of the cuprates represent one of nature's felicitous coincidences. (Another felici- 4 erutarepmeT-hgiH Superconductivity ni eht dereyaL setarpuC tous coincidence, crack-free SiO2 on Si, is the basis of integrated circuits and the microelectronics industry.) There is, however, yet another felicitous coin- cidence, and this is the nature of the resonant states that pin FE and enor- mously enhance .cT We discuss this microscopic problem later. First, how- ever, we discuss the normal-state transport properties of the cuprates and explain microstructurally why these are so different from normal metals. The same microstructural model enables us to understand many aspects of p(T,H) for T near .cT After discussing the chemistry of resonant pinning centers, we collect all these novel concepts to discuss the fundamental issue, which is why cT is so high in the cuprates compared with normal metals. 1.2 Normal-State Percolative Transport in Ferroelastic Anionic Metals Some ten years ago most condensed matter physicists believed that no large qualitative differences in electronic transport existed between simple nearly free electron s-p metallic crystals with one or a few atoms per unit cell and complex multinary metals involving three or more elements and many atoms per unit cell. In all cases it was supposed (Sommerfeld model) that electrical currents were carried by electronic wave packets moving ballisti- cally with Fermi group velocities vF, mean scattering times, z, and mean free paths, l - .ZFV The temperature dependence of the electrical conductivity could . . . . . . . tt e 11 90.0 ,1 t / 0.10 11 11 11 D,r 1 Z " 0 p- ::) 0 c aurov 0.07 0.08 ..1. ",1< n (9 Z _.1 z ILl O Z i "rr Z 0.06 ~- "r< " 0.05 ~2 O -.r,, 0.04 0.03 - .... 1 l.. }, J I l 0 100 20o 300 TEMPERATURE (K) Fig. 1.2. Comparison fo atomic vibrational amplitudes ni OCBY measured by conventional neutron diffraction Debye-Waller factors and by channeling, which si sensitive ot out-of-plane displacements. A distinctive anomaly at T c ~ 09 K si observed by channeling, but not by diffraction. ehT figure si adapted from .4 . C. Phillips 5 be explained (Bloch-Grtineisen), as in simple s-p metals, primarily by phase space considerations, augmented in the case of transition metals by increased scattering due to Peierls Umklapp (lattice recoil) processes 6. The only dif- ferences to be expected for complex metals would be those associated with larger unit cells and more complex energy band structures. Before proceeding further, we should mention that there were already hints of anomalous metallic behavior in low-dimensional organic polymers (such as TTF-TCNQ) and layer compounds (such as NbSe2) which were extensively studied 7 in the 1970s. Most of these anomalies were associated with collec- tive electronic phases (charge density waves) which characteristically appear in conjunction with one- or two-dimensional structures. What makes the anomalies in the quasi-crystal and superconductive high-Tc novel metals so striking is that they do not seem to be collective. The conductivities, for ex- ample, are linear either in temperature T or in T ,1- a property that is strongly suggestive of some phase-space mechanisms that affect single particles. Or- dinary phase space mechanisms in d dimensions, however, give rise either to T 2- or T n behavior, with n ~ 9( - d, so that linearity in T seems almost impos- sible to achieve. This is because the usual arguments are based on Fermi liq- uid theory, which has worked well for elemental and binary metals. We will see, however, that an explanation of electronic transport in novel ternary metals requires a fundamentally different approach. The Fermi liquid description of the broad trends in the temperature de- pendence of the electrical resistivities p(T) of elemental metals (such as the alkalies and alkaline earths, the noble metals, AI and Pb) is remarkably suc- cessful, as shown 8 by de Haas and his coworkers at Leiden in the 1930s. The electronic momentum and energy are dissipated by electron-phonon scattering. The rate at which this occurs is closely related to the lattice ther- mal conductivity and specific heat, as described by the Bloch-Gr6neisen for- mula, which contains the lattice Debye 0 as a characteristic temperature. In this formula p(T) is linear for T >_ 0, freezes out for T -< 0 with a linear region 0.2 < T/0 _< 0.5, and finally goes to zero like T ~ with x( = 3(5) with (without) Umklapp scattering. As the Dutch workers noted, the theory fails only to account for a resistance minimum at T = Tm which shifts to lower temperatures for purer metals and which occurs at Tm>10 K for the purest materials. The minimum was ascribed to internal (magnetic) degrees of freedom of the impurities, and a full perturbative theory of this effect was developed by .J Kondo 9 and others some three decades later. The correctness of the wave-packet description is demonstrated by good quantitative agreement in the elemental metals between the values of 0 derived by fitting p(T) and the lattice specific heat 6. The temperature dependencies of the resistivities of quasi-crystals and HTS do not resemble at all those of normal metals. Annealing at constant compo- sition has almost no effect on p(T) in normal metals, but small changes in processing can drastically affect the functional form of p(T) in these ternary materials. In what follows we quote examples of what we believe to be the "ideal" behavior of p(T) in novel metals. We will justify our choices both phenomenologically and theoretically, but it is important to recognize that 6 High-Temperature Superconductivity in the Layered Cuprates x = 58.0 ~ ~ 59.0 r .... : i i o 0 5 01 51 02 ! 1 1 I I 1 l 0 001 002 003 T(K) Fig. 1.3. The planar resistivity p,,(T) ni iB( rSx_: d.~OuC:) as a function of ,x from the semiconductive to the linear regime, from ,J01 as x is varied. the range of behavior in novel metals is far greater than in normal metals. This point by itself already tells us, without detailed knowledge of the func- tional forms of p(T) that the usual normal-metal picture of electronic wave packets being scattered by vibrational wave packets and isolated, randomly distributed impurities, is inadequate for novel metals. The most famous feature of p(T) in ternary novel metals is its linear be- havior in the HTS cuprates. This behavior was observed initially in the planar resistivity of polycrystalline samples of (La,Sr)2CuO 4 and YBa2Cu307_x, where the conduction takes place primarily in CuO2 planes. There this behavior is masked at low temperatures by the superconductive phase transitions, but in (Bi 2-xSr 5~+6OuC2)x (where Tc is low because the CuO2 planes are widely separated by semiconductive layers) the planar resistivity P ll is linear 10 in T from 7 K to 700 K, a result (Figure 1.3) that cannot be explained in the normal metal context by any reasonable vibrational spectrum. A close correlation exists between the linearity of P ll (T) and the super- conductive transition temperature .cT At the maximum Tc one has n = 1 in the relation P l t(T) = oP + aTn, but as Tc decreases n increases to n = 2, for example 11 in T12Ba2CuO6+~ as 8 is increased from ~0.0 to ~0.1, as shown in Figure 1.4. Some researchers have suggested that this effect is associated for n = 1 with Fermi surface nesting, but this correlation seems extremely unlikely. Such nesting would give rise to charge density waves which would reduce N(EF)

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