High-/Mixed-Voltage Analog and RF Circuit Techniques for Nanoscale CMOS PDF
Preview High-/Mixed-Voltage Analog and RF Circuit Techniques for Nanoscale CMOS
Analog Circuits and Signal Processing Series Editors: Mohammed Ismail. The Ohio State University Mohamad Sawan. E´cole Polytechnique de Montre´al Forfurther volumes: http://www.springer.com/series/7381 (cid:1) Pui-In Mak Rui Paulo Martins High-/Mixed-Voltage Analog and RF Circuit Techniques for Nanoscale CMOS Pui-InMak RuiPauloMartins UniversityofMacau UniversityofMacau Taipa,Macao,China Taipa,Macao,China ISBN978-1-4419-9538-4 ISBN978-1-4419-9539-1(eBook) DOI10.1007/978-1-4419-9539-1 SpringerNewYorkHeidelbergDordrechtLondon LibraryofCongressControlNumber:2012933993 #SpringerScience+BusinessMediaNewYork2012 Thisworkissubjecttocopyright.AllrightsarereservedbythePublisher,whetherthewholeorpartof the material is concerned, specifically the rights of translation, reprinting, reuse of illustrations, recitation,broadcasting,reproductiononmicrofilmsorinanyotherphysicalway,andtransmissionor informationstorageandretrieval,electronicadaptation,computersoftware,orbysimilarordissimilar methodologynowknownorhereafterdeveloped.Exemptedfromthislegalreservationarebriefexcerpts inconnectionwithreviewsorscholarlyanalysisormaterialsuppliedspecificallyforthepurposeofbeing enteredandexecutedonacomputersystem,forexclusiveusebythepurchaserofthework.Duplication ofthispublicationorpartsthereofispermittedonlyundertheprovisionsoftheCopyrightLawofthe Publisher’s location, in its current version, and permission for use must always be obtained from Springer.PermissionsforusemaybeobtainedthroughRightsLinkattheCopyrightClearanceCenter. ViolationsareliabletoprosecutionundertherespectiveCopyrightLaw. The use of general descriptive names, registered names, trademarks, service marks, etc. in this publicationdoesnotimply,evenintheabsenceofaspecificstatement,thatsuchnamesareexempt fromtherelevantprotectivelawsandregulationsandthereforefreeforgeneraluse. While the advice and information in this book are believed to be true and accurate at the date of publication,neithertheauthorsnortheeditorsnorthepublishercanacceptanylegalresponsibilityfor anyerrorsoromissionsthatmaybemade.Thepublishermakesnowarranty,expressorimplied,with respecttothematerialcontainedherein. Printedonacid-freepaper SpringerispartofSpringerScience+BusinessMedia(www.springer.com) Weng-Ieng & Long-Cheng Dita & Filipa, Diogo, Guilherme e Maria Preface The scope of more intelligent and higher data rate wireless connectivity in the coming decades continuously push the performance envelope of wireless circuits andsystems.Higherintegrationlevel,morefunctionality,lesscostandlowerpower are the obvious goals. For the radio front-ends, inductorless broadband solutions possess the highest potential to economically realize low-power multi-standard solutions in nm-length CMOS technologies. The rapid downscaling of transistor sizesandgate-oxidethickness,however,involvesrapidreductionofsupplyvoltage for reliability. This fact, in addition to the changed device features such as lower intrinsic gain and linearity, urges for more feasible techniques from different dimensions, such that the performances can be aligned continuously with the expectationfromtheglobalwirelesschipindustry. Inthisbook,high-/mixed-voltageanalogandRFcircuitsareinvestigatedasthe prospective solution for the next generation of wireless products in nm-length CMOStechnologies.Thecontentstartsbyoverviewingthedesignconsiderations, pros and cons of high-/mixed-voltage circuits before describing three tailor-made circuit designs targeting the mobile-TV applications. Mobile TV is recognized as oneofthekeyfunctionsofhandhelddevicessuchassmartphones. Thefirstdesignisa90-nmCMOSultra-widebandlow-noiseamplifierwithmixed- voltageESDprotectionforhandlingthefull-bandofmobileTV.Thesecondisa90-nm CMOShigh-voltage-enabledmobile-TVRFfront-endwithTV-GSMinteroperability. Thethirdisa65-nmCMOSmixed-voltageunifiedfull-bandmobile-TVreceiverfront- endavertinganyexternalbalun,whilemeasuringfavorablyperformanceswithrespect tothestate-of-the-art. Mosttechniquesaregenerallyextendabletodifferenttypesofwirelesssystems inultra-scaledCMOStechnologies. Taipa,Macao,China Pui-InMak RuiPauloMartins vii Acknowledgments We are grateful to Macao Science and Technology Development Fund (FDCT) andResearchCommitteeofUniversityofMacau(UM),forfundingtheprojectand equipmentsoftheStateKeyLaboratoryofAnalogandMixed-SignalVLSI. WethankMr.Ka-FaiUnandMiaoLiufortheircontributiontothedesignofthe multi-phaselocaloscillatorgeneratorandhigh-voltageamplifier,respectively. We thank the staff at Springer, particularly Chuck Glaser, for guiding the preparationofthisbook. Finally, we send our heartfelt appreciation to our families, who endured our dedicationtothisbook. ix
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