High-k Materials in Multi-Gate FET Devices (Science, Technology, and Management)

177 Pages·2021·27.267 MB·English

by  Shubham Tayal (editor), Parveen Singla (editor), J. Paulo Davim (editor)

High-k Materials in
Multi-Gate FET Devices
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High-k Materials in Multi-Gate FET Devices
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High-k Materials in
Multi-Gate FET
Devices
Edited by Shubham Tayal,
Parveen Singla, and J. Paulo Davim
First edition published 2021
by CRC Press
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ISBN: 978-0-367-63968-6 (hbk)
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DOI: 10.1201/9781003121589
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Contents
Preface ......................................................................................................................vii
Editors .......................................................................................................................ix
Contributors ..............................................................................................................xi
Chapter 1 Introduction to Multi-Gate FET Devices .............................................1
T. S. Arulananth, S. V. S. Prasad, and K. Srinivas Rao
Chapter 2 High-k Gate Dielectrics and Metal Gate Stack Technology for
Advance Semiconductor Devices: An Overview ...............................19
Vibhu Goyal, Shubham Tayal, Shweta Meena, Ravi Gupta,
and Sandip Bhattacharya
Chapter 3 Influence of High-k Material in Gate Engineering and in
Multi-Gate Field Effect Transistor Devices .......................................33
C. Usha and P. Vimala
Chapter 4 Trap Charges in High-k and Stacked Dielectric .................................55
Annada Shankar Lenka and Prasanna Kumar Sahu
Chapter 5 Impact of High-k Dielectric on the Gate-Induced Drain
Leakage of Multi-Gate FETs ..............................................................71
Varshini K. Amirtha and Shubham Sahay
Chapter 6 Advanced FET Design Using High-k Gate Dielectric and
Characterization for Low-Power VLSI ..............................................89
P. Vimala and T. S. Arun Samuel
Chapter 7 Simulation and Analysis of Gate Stack DG MOSFET with
Application of High-k Dielectric Using Visual TCAD ....................105
Nisha Yadav, Sunil Jadav, and Gaurav Saini
v
vi Contents
Chapter 8 Novel Architecture in Gate All-Around (GAA) MOSFET
with High-k Dielectric for Biomolecule Detection ..........................131
Krutideepa Bhol, Biswajit Jena, Umakanta Nanda,
Shubham Tayal, and Amit Kumar Jain
Chapter 9 Asymmetric Junctionless Transistor: A SRAM
Performance Study ...........................................................................141
Gaurav Saini and Trailokya Nath Sasamal
Chapter 10 Performability Analysis of High-k Dielectric-Based
Advanced MOSFET in Lower Technology Nodes ...........................151
Manoj Angara, Biswajit Jena, and Ayodeji Olalekan Salau
Index ......................................................................................................................163
Preface
The successful investigation of insulated-gate field-effect transistor (FET) device by
J. Atalla and D. Kahng at Bell Laboratory in 1959 proved to be the start of a new era
in the semiconductor industry. Not long after the progress of complementary metal-
oxide semiconductor (CMOS) technology has geared up, the semiconductor market
has been taken over by metal oxide semiconductor (MOS) devices. Today’s genera-
tion of electronic gadgets are so tiny, flexible, and economical that numerous func-
tions can be performed by using a handheld electronic system. The demand for
smaller and faster transistors has been fast-tracked by the aggressive scaling of their
dimensions. Such a trend has brought about a comprehensive refurbishment of the
conventional planar transistors (CPTs) where the single-gate topology has moved to
present multi-gate field-effect transistors. Furthermore, new materials such as a high-
k dielectric, strain silicon, and metal gates are also a part of present multi-gate devices
to enhance their performance. This book deals with the application of high-k dielec-
trics materials in multi-gate FETs. This book is intended for researchers in the field
of semiconductor device modeling and undergraduate/postgraduate engineering
courses in the fields of electrical and electronics. Beginning with the motivation
behind the multi-gate FETs and high-k dielectrics, the book also covers the various
way of utilizing these high-k dielectrics in multi-gate FETs for enhancing their per-
formance at the device as well as circuit levels.
This book has been organized into ten chapters. Chapter 1 presents the motivation
behind the multi-gate FETs and current and future trends in transistor technologies.
Chapter 2 gives a brief description of the fabrication of high-k dielectrics along with
their properties, challenges, and applications to use them with FET devices. Chapter
3 covers the influence of high-k dielectric stacked along with gate engineering on
multi-gate FET devices that include Double-Gate (DG) MOSFET, Double Metal DG
MOSFET, Triple Metal DG MOSFET, GAA MOSFET, Double Metal GAA
MOSFET, and Triple Metal GAA MOSFET. Chapter 4 details the impact of charge
trapping in the oxide region or oxide semiconductor interface for further improve-
ment of high-k dielectric-based FET devices. Chapter 5 provides a comprehensive
analysis of the impact of high-k dielectrics utilized in the gate-oxide and the gate-
sidewall spacers on the GIDL of emerging multi-gate FET architectures. Chapter 6
deals with the application of high-k dielectric materials in various novel FET archi-
tectures like Tunnel FETs, Junctionless FETs, Silicon Nanowire transistors, and
Carbon Nanotube transistors. Chapter 7 is devoted to high-k gate dielectric-based
DG-MOSFET and explains its application in terms of device performance. Chapter
8 gives insights into the usage of high-k dielectric in FET devices for detection of
biomolecules, and Chapter 9 deals with the usage of high-k dielectrics for improving
the performance of junctionless FET-based SRAM cell. Finally, Chapter 10 covers
high-k dielectric-based advanced FETs for lower technology nodes. We are grateful
to the contributors of each chapter from renowned institutes and industries, as well as
editorial and production teams for their unconditional support in the process of pub-
lishing this book.
vii

Editors
Dr. Shubham Tayal is an Assistant Professor in the
Department of Electronics and Communication Engineering
at SR University, Warangal, Telangana, India. He has more
than six years of academic/research experience of teaching
at the undergraduate and postgraduate levels. He has
received his PhD in Microelectronics & VLSI Design from
the National Institute of Technology, Kurukshetra, MTech
(VLSI Design) from YMCA University of Science and
Technology, Faridabad, and BTech (Electronics and
Communication Engineering) from MDU, Rohtak. He has published more than 29
research papers in various international journals and conferences of repute, and many
more papers are currently under review. He is on the editorial and reviewer panels of
many SCI/SCOPUS indexed international journals and conferences. Currently, he is
the editor or coeditor for six books from CRC Press. He acted as the keynote speaker
and delivered professional talks on various forums. He is a member of various pro-
fessional bodies including, among others, IEEE and IRED. He is on the advisory
panel of many international conferences. He is a recipient of the Green ThinkerZ
International Distinguished Young Researcher Award 2020. His research interests
include simulation and modeling of multi-gate semiconductor devices, device-circuit
co-design in digital/analog domain, machine learning, and IoT.
Dr. Parveen Singla is Professor in Electronics &
Communication Engineering Department of Chandigarh
Engineering College–Chandigarh Group of Colleges,
Landran, Mohali, Punjab. He received his Bachelor of
Engineering in Electronics & Communication Engineering
with honors from Maharishi Dayanand University, Rohtak;
Master in Technology in Electronics & Communication
Engineering with honors from Kurukshetra University,
Kurukshetra; and PhD in Communication Systems from
IKG Punjab Technical University, Jalandhar, India. He has
17 years of experience in the field of teaching and research.
He has published more than 35 papers in various reputed
journals as well as national and international conferences. He also organized more
than 30 technical events for the students in order to enhance their technical skills and
received Best International Technical Event Organiser Award. He is the guest editor
of various reputed journals. His interest area includes drone technology, wireless
networks, smart antenna and soft computing.
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