Handbook of Compound Semiconductors - Growth, Processing, Characterization, and Devices

709 Pages·1995·32.075 MB·English

by  Holloway, P.H., McGuire, G.E.(eds.)

HANDBOOK OF
COMPOUND
SEMICONDUCTORS
Growth, Processing,
Characterization, and Devices
detidE yb
Paul H. Holloway
ytisrevinU of adirolF
,ellivseniaG adirolF
Gary E. McGuire
scinortceleorciM retneC of htroN aniloraC
hcraeseR elgnairT ,kraP htroN aniloraC
NOYES PUBLICATIONS
Park Ridge, New Jersey, U.S.A.
thgirypoC 0 5991 yb seyoN snoitacilbuP
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yb yna noitamrofni egarots dna laveirter ,metsys
tuohtiw noissimrep ni gnitirw morf eht .rehsilbuP
yrarbiL fo ssergnoC golataC draC :rebmuN 2-59 0541
:NBSI 7-4731-5518-O
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Preface
sihT koob is a tra-eht-fo-etats ecnerefer no eht htworg and -ssecorp
gni fo dnuopmoc .srotcudnocimes ehT gnidael strepxe ni eht tnatropmi
htworg ,seuqinhcet gnissecorp steps, noitaziretcarahc ,sdohtem ,gnigakcap
and secived evah detubirtnoc rieht .egdelwonk elihW eht epocs fo eht koob
is dnuopmoc ,srotcudnocimes ereht era os ynam tnereffid srotcudnocimes
gnieb deiduts and desu that etelpmoc egarevoc fo all slairetam is elbissopmi
ni eno .koob eroferehT eht emphasis ni this koob niso -edinesra-muillag and
desab-edihpsohp-muidni .slairetam lareveS rehto V-III and emos IV-II
dnuopmoc srotcudnocimes era dessucsid erehw yeht edivorp ralucitrap
insight ro etartsulli cificeps seitreporp ro/dna .sessecorp
sretpahC ni eht koob edivorp a etelpmoc weivrevo fo eht -olonhcet
seig yrassecen ot worg klub latsyrc-elgnis substrates, and worg -oreteh and
laixatipeomoh smlif using ralucelom maeb yxatipe )EBM( ro cinagro-latem
lacimehc ropav noitisoped (MOCVD). seigolonhceT yrassecen ot ssecorp
dnuopmoc srotcudnocimes otni tset serutcurts and secived era ,derevoc
gnidulcni lacirtcele ,stcatnoc cirtceleid ,noitalosi ecafretni ,noitavissap noi
,noitatnalpmi tew and yrd ,gnihcte and dipar lamreht .gnissecorp seuqinhceT
ot eziretcarahc eht slairetam and secived using ,snortcele ,snoi and ,snotohp
era .debircsed elihW eht emphasis fo eht koob is no slairetam htworg and
,gnissecorp eht seigolonhcet era decalp ni evitcepsrep yb a weiver fo eht
tnatropmi cinortcele and cinortceleotpo ,secived and laixatipe ,ffo-tfil and
rehto ecived gnigakcap issues.
vii
viii Preface
With this etelpmoc egarevoc fo eht lacitirc ,scipot ew eveileb eht
koob lliw eb a elbaulav ecnerefer rof snosrep yltnerruc gnimrofrep hcraeser
no dnuopmoc .srotcudnocimes tI lliw osla eb an tnellecxe ecnerefer rof
decnavda etaudarg sesruoc ni slairetam ,ecneics lacirtcele ,gnireenigne and
deilppa .scisyhp nI ,tnemegdujruo eht srohtua ehtfo sretpahc evah dedivorp
yllanoitpecxe ,evisneherpmoc evitatirohtua ,krow and rof this ew era -xe
ylemert lufetarg
,rebmetpeS 1995
,ellivseniaG adirolF luaP .H yawolloH
hcraeseR elgnairT ,kraP yraG .E eriuGcM
htroN aniloraC
Contents
1 Bulk Crystal Growth ............................................ 1
Shin-ichi Akai and Masamichi Yokogawa
NOITCUDORTNI ................................................................................ 1
1.0 NOITCUDER FO NOITACOLSID YTISNED ........................... .2
2.0 BH sAaG ................................................................................ .4
2.1 gnilooC sdohteM ............................................................... .4
2.2 ecneulfnI fo diuqiL-diloS ecafretnI epahS ........................... .4
3.0 CEL sAaG ................................................................................. 7
3.1 yrotsiH fo ygolonhceT ..tnempoleveD .................................. 7
3.2 nobraC ..lortnoC ................................................................. 9
3.3 gnilaennA ......................................................................... 11
3.4 Vth lortnoC ...................................................................... 12
3.5 retemaiD-egraL latsyrC .................................................... 15
4.0 PnI ............. ............................................................................... 17
4.1 noitacolsiD-woL PnI ......................................................... 17
4.2 gnitalusnI-imeS PnI .......................................................... 1 2
5.0 SUMMARY .............................................................................. 22
SECNEREFER 23 ....................................................................................... 23
xi
xii Contents
2 MOCVD of Compound Semiconductor Layers 29
Eberhard Veuhoff
1 .O NOITCUDORTNI ..................................................................... 29
2.0 HTWORG SSECORP ............................................................... 31
2.1 rotcaeR ngiseD ................................................................. 32
2.2 htworG srosrucerP ............................................................ 33
2.3 ytefaS stcepsA .................................................................. 36
3.0 CIFICEPS LAIRETAM SMETSYS ........................................... 37
3.1 sAaG and PnI desaB slairetaM ......................................... 38
3.2 worraN pagdnaB slairetaM ............................................... 56
3.3 ediW pagdnaB slairetaM ................................................... 63
4.0 SUMMARY AND ERUTUF SNOITCERID .............................. 72
TNEMGDELWONKCA ..................................................................... 74
SECNEREFER ............................................................................... 74
3 Molecular Beam Epitaxy .................................... 84
Kambiz Alavi
1 .O NOITCUDORTNI
1.1 epocS fo raluceloM maeB yxatipE .................................... 84
1.2 rojaM srotcaF ni eht laitinI tnempoleveD fo EBM ............. 88
1.3 EBM ecnerefeR lairetaM .................................................. 90
1.4 ..sisponyS ......................................................................... 91
2.0 TNATROPMI SERUTAEF FO EBM ......................................... 1 9
2.1 VI-III tnemnorivnE and hgiH-artlU ytiruP ecruoS lairetaM 92
2.2 utiS-nI emiT-laeR gnirotinoM and lortnoC no a
reyalonoM-buS ..elacS ..................................................... 94
2.3 tnatropmI serutaeF fo eht EBM htworG msinahceM ......... 59.
2.4 utiS-nI gnissecorP and laretaL gninrettaP .......................... 97
2.5 snoitairaV no eht emehT fo EBM ...................................... 98
3 .O EBM METSYS NOITARUGIFNOC ......................................... 99
4.0 EHT HTWORG REBMAHC STNENOPMOC ........................ 1 10
4.1 ehT VI-III metsyS ............................................................ 103
4.2 maeB noitareneG ............................................................ 104
4.3 ehT etartsbuS redloH ...................................................... 112
4.4 noI :seguaG tnemerusaeM fo maeB ,xulF htworG ,etaR
and noitisopmoC ............................................................. 114
Contents xiii
4.5 latsyrC ssenkcihT :rotinoM xulF tnemerusaeM ............... 114
4.6 etartsbuS erutarepmeT tnemerusaeM ............................... 115
5.0 NOITCELFER HGIH YGRENE NORTCELE
NOITCARFFID )DEEH@ ...................................................... 115
5.1 ecafruS :noitcurtsnoceR lareneG ..................................... 117
5.2 ecafruS :noitcurtsnoceR sAaG ........................................ 118
5.3 DEEHR ytisnetnI noitallicsO and its ..noitacilppA ........... 125
6.0 MASS YRTEMORTCEPS ...................................................... 134
6.1 detaludoM maeB Mass yrtemortcepS )SMBM( ............... 134
6.2 noitproseD Mass yrtemortcepS .)SMD( ........................... 137
7.0 UTIS-NI REGUA NORTCELE YPOCSORTCEPS )SEA( ...... 137
8.0 LACITPO SDOHTEM FOR EMIT-LAER HTWORG
GNIROTINOM ....................................................................... 139
8.1 lacitpO yrtemoryP .......................................................... 140
8.2 noissimsnarT ypocsortcepS ............................................. 1 14
8.3 :ecnecsenimulotohP woL etartsbuS erutarepmeT
tnemerusaeM .................................................................. 1 14
8.4 ecnatcelfeR ecnereffiD yrtemortcepS )DR( ...................... 142
8.5 resaL thgiL gnirettacS )SLL( .......................................... 142
8.6 cipocsortcepS yrtemospillE ............................................. 142
9.0 HTWORG FO V-III COMPOUNDS ....................................... 143
9.1 etartsbuS noitaraperP roirP ot refsnarT ot EBM .............. 144
9.2 etartsbuS noitaraperP ni eht EBM metsyS ....................... 147
9.3 EBM htworG .................................................................. 149
10.0 HTWORG-TSOP NOITAZIRETCARAHC ............................. 149
10.1 lanoitisopmoC/larutcurtS ................................................ 150
10.2 lacirtcelE and tropsnarT-otengaM ................................... 150
10.3 lacitpO and derarfnI ypocsortcepS .................................. 1 15
10.4 larutcurtS stcefeD ni V-III dnuopmoC sreyalipE ............. 1 15
11 .O GNIDLIUB SKCOLB FO MODERN :SECIVED PAGDNAB
GNIREENIGNE NI V-III SERUTCURTS ............................... 153
11.1 gnipoD ........................................................................... 154
11.2 Quantum slleW and secittalrepuS .................................... 154
11.3 reyaL-deniartS secittalrepuS and Quantum slleW ............ 155
11.4 pagdnaB gnidarG and deprihC ..secittalrepuS .................. 156
12.0 EUGOLIPE ............................................................................. 156
STNEMGDELWONKCA ................................................................. 7 15
SECNEREFER ............................................................................. 157
xiv Contents
4 Physical and Chemical Deposition of Metals as
Ohmic Contacts to InP and Related Materials.. . .170
Avishay Katz
1.0 NOITCUDORTNI ................................................................... 170
2.0 SLATNEMADNUF CIMHO STCATNOC ............................. 172
2.1 cireneG noitinifeD fo ykttohcS reirraB thgieH ................. 173
2.2 ecafretnI setatS and leveL-imreF gninniP ........................ 175
2.3 noitanimreteD fo ykttohcS reirraB ..thgieH ...................... 177
2.4 noitanimreteD fo cimhO tcatnoC sretemaraP PnI
and detaleR slairetaM ..................................................... 178
2.5 stpecnoC fo noitamroF fo cimhO stcatnoC ot
desaB-PnI slairetaM ....................................................... 182
3.0 NGISED STPECNOC FO GNISSECORP CIMHO
TCATNOC OT ..PnI ................................................................ 185
3.1 lautpecnoC Assumptions ................................................. 185
3.2 laicafretnI noitcaeR snrecnoC ......................................... 187
3.3 lacirtcelE ecnamrofreP stnemeriuqeR .............................. 188
3.4 nihT mliF lacinahceM seitreporP .................................... 1 19
4.0 CIMHO TCATNOC GNISSECORP YGOLONHCET ............. 192
4.1 noitcudortnI .................................................................... 192
4.2 tcatnoC gnissecorP yb lateM lacisyhP ..noitisopeD ......... 194
4.3 tcatnoC gnissecorP yb lacimehC lateM noitisopeD .......... 219
5.0 SNOISULCNOC ..................................................................... 239
STNEMGDELWONKCA ................................................................. 240
SECNEREFER ............................................................................. 241
5 Surface Processing of III-V Semiconductors . . 251
yendiS .I Ingrey
1 .O NOITCUDORTNI ................................................................... 25 1
2.0 SNOITCAER ON DEVAELC )011( SECAFRUS .................... 254
2.1 nobracordyH noitanimatnoC ........................................... 258
2.2 evitaN sedixO no V-III sdnuopmoC ................................ 259
2.3 HO,HC/rB ..................................................................... 260
2.4 ,O,H/,OS,H ..................................................................................................... 261
2.5 lCH .......................................................................... 261
....................................................................... 263
2.6 362HO,HN
2.7 FI-I .......................................................................... 263
Contents xv
3.0 STCEFFE FO AIR-FORMED NOITANIMATNOC ON
ECAFRETNI SCITSIRETCARAHC ................................... 263
3.1 laixatipE htworg ............................................................. 263
3.2 ykttohcS and cimhO stcatnoC ......................................... 264
3.3 cirtceleiD sreyalrevO ...................................................... 267
4.0 NOITANIMATNOC LAVOMER ............................................ 270
4.1 rettupS lavomeR ............................................................. 270
4.2 Plasma ecafruS stnemtaerT ............................................. 270
4.3 lamrehT noitproseD ........................................................ 27 1
4.4 enozO/VU noitadixO ...................................................... 27 1
5.0 ECAFRUS NOITAVISSAP ..................................................... 272
6.0 SNOITACILPPA ..................................................................... 276
7.0 SUMMARY AND SNOISULCNOC ....................................... 280
STNEMGDELWONKCA ................................................................. 28 1
SECNEREFER ............................................................................. 28 1
6 Ion Implantation Induced Extended Defects
in GaAs ............................................................. 285
Kevin S. Jones
1 .O EPYT I STCEFED ................................................................ 286
1.1 epyT I tcefeD noitamroF ................................................. 289
1.2 epyT I tcefeD noitamroF sdlohserhT ............................... 289
1.3 epyT I tcefeD ytisneD and ..noitubirtsiD .......................... 297
1.4 epyT I tcefeD ytilibatS .................................................... 301
5.I stceffE fo epyT I stcefeD ................................................. 302
2.0 EPYT II STCEFED ................................................................. 312
3 .O EPYT III STCEFED ................................................................ 14 3
4.0 EPYT VI STCEFED ................................................................ 15 3
5.0 EPYT V STCEFED ................................................................. 316
6.0 SNOISULCNOC ..................................................................... 324
SECNEREFER ............................................................................. 325
7 Passivation of GaAs and InP . . . . . . . . . . . . . . . . . . . . . . . . . . . . 328
Vinod Malhotra and Carl FK Wilmsen
1 .O ECAFRUS ,STCEFED LEVEL-IMREF ,GNINNIP
AND TCEFED SLEDOM . . . . . . ..t . . . . . . . . . . . . . . . . . . . . . . . 33 1
2.0 EVITAN . . . . . . . . . . . . . . . . SEDIXO . . . . . . . . . . . . . . . . . . . . . . . . . . . . 335
xvi Contents
3 .O NEGORDYH AND NEGORTIN ............................................. 6 3 3
4.0 RUFLUS ............................................................................. 342
5.0 ..MUINELES ........................................................................... 357
6.0 NOCILIS ............................................................................. 358
7.0 LAIXATIPE HTWORGER ..................................................... 360
8.0 EUGOLIPE ............................................................................. 361
STNEMGDELWONKCA ................................................................. 362
SECNEREFER ............................................................................. 362
8 Wet and Dry Etching of Compound
Semiconductors ................................................. 370
Stephen J. Pearton
1 .O NOITCUDORTNI ................................................................... 370
2.0 TEW LACIMEHC GNIHCTE ................................................. 370
2.1 lareneG ..selpicnirP ......................................................... 371
2.2 teW lacimehC gnihctE fo sAaG ....................................... 373
2.3 teW gnihctE fo PnI ......................................................... 377
2.4 teW gnihctE fo ..PaGnI ................................................... 379
2.5 teW gnihctE fo PnIlA ...................................................... 380
2.6 teW gnihctE fo rehtO V-III slairetaM .............................. 38 1
3.0 AMSALP ..GNIHCTE ............................................................. 382
3.1 lareneG selpicnirP fo EIR ............................................... 384
3.2 saG ..seirtsimehC ............................................................ 387
3.3 ecafruS yrtsimehC .......................................................... 397
3.4 ..egamaD ........................................................................ 402
3.5 Masking slairetaM .......................................................... 14 4
3.6 nortcelE nortolcyC ecnanoseR segrahcsiD ....................... 42 1
3.7 eciveD ..gnissecorP ......................................................... 426
4.0 NOISULCNOC ....................................................................... 437
STNEMGDELWONKCA ................................................................. 437
SECNEREFER ............................................................................. 437
9 Rapid Isothermal Processing (RIP) ................. 442
Rajendra Singh
1 .O NOITCUDORTNI ................................................................... 442
2.0 YHW RAPID LAMREHTOSI .?GNISSECORP ...................... 443
3.0 YROTSIH FO RAPID LAMREHTOSI ..GNISSECORP ........ .447
4.0 EPOCS FO RAPID LAMREHTOSI GNISSECORP ............... 447