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Electrical Properties of Annealed and Coated Boron Nitride under Electron Beam Irradiation PDF

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Preview Electrical Properties of Annealed and Coated Boron Nitride under Electron Beam Irradiation

UUttaahh SSttaattee UUnniivveerrssiittyy DDiiggiittaallCCoommmmoonnss@@UUSSUU Presentations Materials Physics Summer 6-2015 EElleeccttrriiccaall PPrrooppeerrttiieess ooff AAnnnneeaalleedd aanndd CCooaatteedd BBoorroonn NNiittrriiddee uunnddeerr EElleeccttrroonn BBeeaamm IIrrrraaddiiaattiioonn Kevin Guerch Thierry Paulmier JR Dennison Utah State Univesity Justin Dekany Sophia Guillemet-Fritsch Pascal Lenormand Follow this and additional works at: https://digitalcommons.usu.edu/mp_presentations Part of the Condensed Matter Physics Commons RReeccoommmmeennddeedd CCiittaattiioonn Guerch, Kevin; Paulmier, Thierry; Dennison, JR; Dekany, Justin; Guillemet-Fritsch, Sophia; and Lenormand, Pascal, "Electrical Properties of Annealed and Coated Boron Nitride under Electron Beam Irradiation" (2015). Proceedings of the 13th International Symposium on Materials in the Space Environment. Presentations. Paper 118. https://digitalcommons.usu.edu/mp_presentations/118 This Presentation is brought to you for free and open access by the Materials Physics at DigitalCommons@USU. It has been accepted for inclusion in Presentations by an authorized administrator of DigitalCommons@USU. For more information, please contact [email protected]. Electrical properties of annealed and coated boron nitride study under electron beam irradiation K. Guerch (1,2,3), T. Paulmier(1), JR Dennison(2), J. Dekany(2), S. Guillemet-Fritsch(3), P. Lenormand(3) (1) ONERA, The French Aerospace Lab, F-31055, France (2)Materials Physics Group, Physics Department, Utah State University, Logan, UT –United States (3)Institut Carnot CIRIMAT (CNRS), UMR 5085, Université Paul Sabatier, 118 route de Narbonne 31062 Toulouse Cedex 9 – France 13th International Symposium on Materials in the Space Environment (ISMSE-13) 22 - 26 June 2015 – Pau, France Context & motivation 1/13 Charging study of annealed Scientific approach Experimentation  Aging study of an–BN/AlO Conclusion & outlooks and coated boron nitride 2 3 Context Insulator materials such as boron nitride (BN) are exposed to electron radiation during the operation of THALES’s electronic application e- p e- p Issue e- p Electron  Charging of BN under irradiation implantation The application efficiency decreases ! - - - - - - - - -  Alumina coating on BN to limit charging Al O - - - - - - - - - Properties degrade over time 2 3 BN substrate Motivation Electronic application (THALES) Spacecraft  Identify the physical mechanisms of charging and degradation in materials  Optimise the electrical properties of ceramics to limit these phenomena ELECTROCERAMICS XIV,Bucharest –June 16,2014 Outlines 2/13 Charging study of annealed Scientific approach Experimentation  Aging study of an–BN/AlO Conclusion & outlooks and coated boron nitride 2 3  Scientific approach  Experimentation Charging study of annealed and coated  BN  Aging study of annealed BN/Al O 2 3  Conclusion & outlooks ELECTROCERAMICS XIV,Bucharest –June 16,2014 2014 -MPG (USU) / ONERA Luminescence of BN under electron irradiation  Scientific approach 3/13 Charging study of annealed Scientific approach Experimentation  Aging study of an–BN/AlO Conclusion & outlooks and coated boron nitride 2 3 - Charging study of new industrial samples Aging study of the annealed BN/Al O 2 3 Parametric study under electron beam : Under critical electron irradiation :  Energy  BN substrate  High flux  Flux  Alumina coating  High dose  Long time  Temperature  Annealing treatment Dark conductivity study of the industrial ceramics Secondary Incident electrons electron emission ( ) SEE Surface 300 nm conductivity Al O 2 3 ( ) surf BN Volume conductivity ELECTROCERAMICS XIV,Bucharest –June 16,2014 ( ) vol  Experimentation 4/13 Charging study of annealed Scientific approach Experimentation  Aging study of an–BN/AlO Conclusion & outlooks and coated boron nitride 2 3 CEDRE facility and method PC : control Study the charging and relaxation kinetics and the & acquisition Video recorder aging in representative conditions Voltmeter Air Vacuum  Secondary vacuum (P ~ 5 10-7 hPa) Kelvin Probe 5·10-7hPa (KP)  20 °C < T < 400 °C  Electron gun : 1 keV < E < 20 keV i 50 pA.cm-2 < J < 100 µA.cm-2 i Ceramic heating Electron gun element (E < 20 keV) i T 400 °C Round trip duration : 50 s max Interception of beam: 20 sec Surface potential (V ) measurement with an s electrostatic probe (Kelvin Probe – KP) Sample ELECTROCERAMICS XIV,Bucharest –June 16,2014  Experimentation 5/13 Charging study of annealed Scientific approach Experimentation  Aging study of an–BN/AlO Conclusion & outlooks and coated boron nitride 2 3 CVC chamber and method Study the dark conductivity in representative conditions  Secondary vacuum (P ~ 1 10-5 hPa)  -150 °C < T < 200 °C Constant Voltage Conductivity (CVC) method[1] – 70 V < V < 470 V I(t) > 10-16 A 𝑰(𝒕)× 𝒅 𝝈𝑪𝑽𝑪(𝒕) = 𝑺 × 𝑽 ELECTROCERAMICS XIV,Bucharest –June 16,2014 [1] J. Brunson, «Hopping Conductivity and Charge Transport in Low Density Polyethylene», PhD Thesis, Utah State University, Logan,UT, USA, 2010.  Charging study of annealed and coated BN 6/13 Charging study of annealed Scientific approach Experimentation  Aging study of an–BN/AlO Conclusion & outlooks and coated boron nitride 2 3 Irradiation phase Aim: Identify the influence of coating and thermal treatments on the surface potential regulation of BN 3 configurations of unused industrial ceramics:  Boron nitride substrate - BN  BN with alumina coating - BN/Al O 2 3  Annealed BN/Al O - an–BN/Al O 2 3 2 3 Incident electrons with different energies 300 nm 5 keV Al O 2 3 6.4 keV 8 keV 11 keV The energy for a penetration length of 300 nm in BN Al O is  6.4 keV (Monte-Carlo simulations) 2 3 ELECTROCERAMICS XIV,Bucharest –June 16,2014  Charging study of annealed and coated BN 7/13 Charging study of annealed Scientific approach Experimentation  Aging study of an–BN/AlO Conclusion & outlooks and coated boron nitride 2 3 Irradiation phase E (kV) 0 Incident electrons 0 5 10 15 J = 10 nA.cm-2, defocused beam 0 i an–BN/Al O -500 2 3 n im -1000 300 nm 5 keV 01 BN/Al O Al2O3 = 2 3 -1500 8 keV trri ,) V ( -2000 q e Vs BN 11 keV -2500 10 nA.cm-2, -3000 Defocused beam, BN T °C room -3500 E = 5 keV (non-penetrating beam for the coating) : No charging in coated BN samples i E  8 keV : Critical and low charging in BN and coated BN, respectively but the V is limited in an-BN/Al O i s 2 3 The alumina coating decreases the surface potential through its higher  [2] than that of BN[3][4] SEE The annealing treatment under vacuum limits the V : s  Defects generation has been determined which may increase the conduction mechanisms  Hypothesis: decrease of the critical threshold of surface discharges [2] P. H. Dawson, «Secondary Electron Emission Yields of some Ceramics», J. Appl. Phys., vol. 37, no 9, p. 3644, 1966 [3E] LL.E GC. SThRerOstnCyoEvRetA AMl., IRCepSorXt oIfV th,eB Muocschowa rEensertge–ticJ Iunsntietut1e,6 (,872) 0N1°468091701, 1969. [4] B. V. Prokofiev, «PyrolyticalBoron Nitride as a Window Material for High Power Microwave Electron Devices», IEEE, 2010  Charging study of annealed and coated BN 8/13 Charging study of annealed Scientific approach Experimentation  Aging study of an–BN/AlO Conclusion & outlooks and coated boron nitride 2 3 Relaxation phase E (kV) 0 0 5 10 15 𝑽 𝑸 1 𝑽𝒏𝒐𝒓𝒎 = 𝒔(𝟏𝟎) ≡ 𝒔(𝟏𝟎) BN 𝒔(𝟏𝟎𝒎𝒊𝒏) 𝑽 𝑸 𝒔(𝟎) 𝒔(𝟎) 0.9 0.8 n BN/Al O im 2 3 0.7 01 After Ei = 5 keV : Charge relaxation from alumina coating and = 0.6 xa especially in the annealed one tler 0.5 ,) V 0.4 ( m ron 0.3 Vs After E  8 keV : Low relaxation rates even though some i 0.2 charges are evacuated in the annealed sample 0.1 T °C an–BN/Al O room 2 3 0 Intrinsic conductivities of industrial samples determined through CVC method BN BN/Al O an–BN/Al O 2 3 2 3 (0,5 ± 0,1).10-15 S.m-1 (0,2 ± 0,1).10-15 S.m-1 (8 ± 1).10-15 S.m-1 The annealing treatment increases the total conductivity (by 25 – 30) ELECTROCERAMICS XIV,Bucharest –June 16,2014

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